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Showing 91 to 94 of 94 (0.021 seconds)Spelling suggestions: "subject:"etch"" "subject:"tch""
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Wetting Optimized Solutions for Plasma Etch Residue Removal for Application in Interconnect Systems of Integrated Circuits: Benetzungsoptimierte Reinigungslösungen für die Entfernung von Plasmaätzresiduen für die Anwendung im Verdrahtungssystem integrierter SchaltungenAhner, Nicole 04 April 2012 (has links)
In multi-level Co/low-k based interconnect systems of ultralarge-scale integrated electronic devices the removal of plasma etch residues by common plasma cleaning processes has been shown to alter material properties like k-value and leakage current of the low-k dielectric. Besides the development of less damaging plasma processes their substitution by wet cleaning steps is in the focus of research and development. With further decreasing feature dimensions the development of wet cleaning processes has to include wetting issues like the non-wetting of small features due to the surface energy of the liquid or pattern collapse effects of low-k dielectric trenches due to high capillary forces This work at first focuses on the determination of the surface energetic character of common cleaning solutions for PERR and differently etched or ashed low-k dielectric surfaces by contact angle analysis, to outline which combinations of solid and liquid will be critical regarding their wetting behavior. Besides the determination of the wetting behavior the contact angle analysis turned out to be a fast and sensible analytic tool to understand the surface modifications introduced by different plasma processes and can help to understand the mechanisms of plasma damage of low-k dielectric surfaces. The analysis showed that especially polymerizing plasma etch processes produce a low-energetic low-k dielectric surface with a negligible polar energy contributions, which inhibits their wetting by high energetic water based cleaning solutions, which actually are favored by semiconductor manufacturers. The strategy to overcome these wetting issues followed in the present work is the reduction of the surface energy of the cleaning liquids by the application of surfactants. Several types of surfactants have been applied to the cleaning liquids and the compatibility of the surfactant solutions to BEOL materials like low-k dielectrics, copper and diffusion barriers as well as their dynamic behavior has been studied. The analysis showed that choosing the appropriate rinsing solution after the cleaning process is essential to ensure its compatibility to porous low-k dielectrics. Optical, electrical and structural data indicated that DIW rinse in most of the cases was not able to remove residual surfactant species within the material, while for an IPA rinse most of the residual surfactants have been removed. Considering the data received for compatibility to low-k materials, copper and barriers, the dynamic behavior of the surfactant solutions as well as influences of increased bath temperature and long term stability a general advice about surfactant selection and processing of surfactant aided solutions within BEOL is given. / In mehrlagigen Kupfer/low-k basierten Metallisierungssystemen hochintegrierter elektronischer Bauelemente kann die Entfernung von Residuen nach der Plasmastrukturierung des Dielektrikums mittels herkömmlicher Plasmareinigungsprozesse zur Schädigung der Isolatorschicht und damit zum Ansteigen der relativen Dielektrizitätszahl sowie der Leckströme führen. Neben der Entwicklung schädigungsarmer Plasmaprozesse stellt der Ersatz dieser Prozesse durch Nassreinigungsschritte zur Ätzresiduenentfernung eine vielversprechende Alternative dar. Mit stetig abnehmenden Strukturabmaßen ist bei der Entwicklung dieser Nassreinigungsprozesse neben der Materialkompatibilität auch das Benetzungsverhalten der Reinigungsflüssigkeit von entscheidender Bedeutung, da die Oberflächenenergie der Reinigungslösung das Eindringen dieser in kleinste Strukturen verhindern und es durch hohe Kapillarkräfte zum Kollaps von Grabenstrukturen im Dielektrikum kommen kann. In der vorliegenden Arbeit wurde zunächst mittels Kontaktwinkelanalyse die Oberflächenenergie verschieden prozessierter low-k Dielektrikaschichten sowie herkömmlicher Lösungen zur Entfernung von Ätzresiduen untersucht, um hinsichtlich ihres Benetzungsverhaltens besonders kritische Materialkombinationen aufzuzeigen. Neben der Bestimmung des Benetzungsverhaltens hat sich die Kontaktwinkelanalyse zur Oberflächenenergieberechnung als schnelle und empfindliche Methode zur Analyse der Auswirkung von Plasmaprozessen auf die Oberfläche von low-k Dielektrika erwiesen. Die Untersuchungen haben gezeigt, dass besonders polymerisierende Plasmaprozesse eine niederenergetische Oberfläche erzeugen, welche von den derzeit in der Halbleiterfertigung bevorzugten hochenergetischen wasserbasierten Reinigungslösungen nur schlecht benetzt wird. Um diesem Effekt entgegenzuwirken wurde in der vorliegenden Arbeit die Senkung der Oberflächenenergie der Reinigungslösungen durch Zugabe von Tensiden untersucht. Es wurden mehrere Tenside unterschiedlichen Typs den Reinigungsflüssigkeiten zugemischt und die Kompatibilität dieser Lösungen mit low-k Dielektrika, Kupferschichten und Diffusionsbarrieren untersucht sowie ihr dynamisches Verhalten analysiert. Dabei hat sich gezeigt, dass die Auswahl der geeigneten Spüllösung nach dem eigentlichen Reinigungsprozess von entscheidender Bedeutung ist. Optische, elektrische sowie strukturelle Daten deuten darauf hin, dass bei Verwendung einer Spülung mit deionisiertem Wasser in den meisten Fällen Tensidrückstände im porösen Dielektrikum verbleiben. Eine Spülung mit Isopropanol war hingegen in der Lage, einen Großteil dieser Tensidrückstände zu entfernen. Unter Einbeziehung der Daten zur Materialkompatibilität und dem dynamischen Verhalten der Tensidlösungen bei Raumtemperatur und erhöhter Badtemperatur sowie ihrer Langzeitstabilität konnte schließlich eine Prozessempfehlung für die Verwendung der benetzungsoptimierten Reinigungslösungen in der BEOL-Prozessierung gefunden werden.
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An Analysis of Microstructure and Corrosion Resistance in Underwater Friction Stir Welded 304L Stainless SteelClark, Tad Dee 30 June 2005 (has links) (PDF)
An effective procedure and parameter window was developed for underwater friction stir welding (UWFSW) 304L stainless steel with a PCBN tool. UWFSW produced statistically significant: increases in yield strengths, decreases in percent elongation. The ultimate tensile strength was found to be significantly higher at certain parameters. Although sigma was identified in the UWFSWs, a significant reduction of sigma was found in UWFSWs compared to ambient FSWs. The degree of sensitization in UWFSWs was evaluated using double loop EPR testing and oxalic acid electro-etched metallography. Results were compared to base metal, ambient FSW, and arc welds. Upper and lower sensitization localization bands were identified in the UWFSWs. Although higher sensitization levels were present in UWFSWs compared to the arc weld, ambient FSW, and heat treated base metals, the UWFSWs were found less susceptible to corrosion than arc welds due to the subsurface location of the sensitization bands. A SCC analysis of UWFSWs relative to base metal and arc weldments was performed. U-bends were exposed to two 3.5% NaCl cyclic immersion experiments at 21 °C and 63 °C for 1000 hours each. A tertiary test was conducted in a 25% NaCl boiling solution. The UWFSW u-bends were no more susceptible to SCC than base metal in the cyclic immersion tests. In the boiling NaCl test, the SCC of the UWFSWs showed significant improvement over the SCC of arc welds. Arc u-bends cracked entirely within the weld bead and HAZ, while SCC in the UWFSWs showed no cracking localization.
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BBT Acoustic Alternative Top Bracing CADD Data Set-NoRev-2022Jun28Hemphill, Bill 22 July 2022 (has links)
This electronic document file set consists of an overview presentation (PDF-formatted) file and companion video (MP4) and CADD files (DWG & DXF) for laser cutting the ETSU-developed alternate top bracing designs and marking templates for the STEM Guitar Project’s BBT (OM-sized) standard acoustic guitar kit. The three (3) alternative BBT top bracing designs in this release are (a) a one-piece base for the standard kit's (Martin-style) bracing, (b) 277 Ladder-style bracing, and (c) an X-braced fan-style bracing similar to traditional European or so-called 'classical' acoustic guitars.
The CADD data set for each of the three (3) top bracing designs includes (a) a nominal 24" x 18" x 3mm (0.118") Baltic birch plywood laser layout of (1) the one-piece base with slots, (2) pre-radiused and pre-scalloped vertical braces with tabs to ensure proper orientation and alignment, and (3) various gages and jigs and (b) a nominal 15" x 20" marking template.
The 'provided as is" CADD data is formatted for use on a Universal Laser Systems (ULS) laser cutter digital (CNC) device. Each CADD drawing is also provided in two (2) formats: Autodesk AutoCAD 2007 .DWG and .DXF R12. Users should modify and adapt the CADD data as required to fit their equipment. This CADD data set is released and distributed under a Creative Commons license; users are also encouraged to make changes o the data and share (with attribution) their designs with the worldwide acoustic guitar building community.
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BBT Acoustic Alternative Top Bracing CADD Data Set-NoRev-2022Jun28Hemphill, Bill 22 July 2022 (has links)
This electronic document file set consists of an overview presentation (PDF-formatted) file and companion video (MP4) and CADD files (DWG & DXF) for laser cutting the ETSU-developed alternate top bracing designs and marking templates for the STEM Guitar Project’s BBT (OM-sized) standard acoustic guitar kit. The three (3) alternative BBT top bracing designs in this release are (a) a one-piece base for the standard kit's (Martin-style) bracing, (b) 277 Ladder-style bracing, and (c) an X-braced fan-style bracing similar to traditional European or so-called 'classical' acoustic guitars.
The CADD data set for each of the three (3) top bracing designs includes (a) a nominal 24" x 18" x 3mm (0.118") Baltic birch plywood laser layout of (1) the one-piece base with slots, (2) pre-radiused and pre-scalloped vertical braces with tabs to ensure proper orientation and alignment, and (3) various gages and jigs and (b) a nominal 15" x 20" marking template.
The 'provided as is" CADD data is formatted for use on a Universal Laser Systems (ULS) laser cutter digital (CNC) device. Each CADD drawing is also provided in two (2) formats: Autodesk AutoCAD 2007 .DWG and .DXF R12. Users should modify and adapt the CADD data as required to fit their equipment. This CADD data set is released and distributed under a Creative Commons license; users are also encouraged to make changes o the data and share (with attribution) their designs with the worldwide acoustic guitar building community.
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