Spin torque oscillators (STOs) are microwave oscillators with an attractive blend of features, including a more-than-octave tunability, GHz operating frequencies, nanoscale size, nanosecond switching speed and full compatibility with CMOS technology. Over the past decade, STOs' physical phenomena have been explored to a greater extent, their performance has been further improved, and STOs have already shown great potential for a wide range of applications, from microwave sources and detectors to neuromorphic computing. This thesis is devoted to promoting the STO technology towards its applications, by means of implementing the STO's electrical model, dedicated CMOS integrated circuits (ICs), and STO-CMOS IC integration. An electrical model, which can capture magnetic tunnel junction (MTJ) STO's characteristics, while enabling system- and circuit-level designs and performance evaluations, is of great importance for the development of MTJ STO-based applications. A comprehensive and compact analytical model, which is based on macrospin approximations and can fulfill the aforementioned requirements, is proposed. This model is fully implemented in Verilog-A, and can be used for efficient simulations of various MTJ STOs. Moreover, an accurate phase noise generation approach, which ensures a reliable model, is proposed and successfully used in the Verilog-A model implementation. The model is experimentally validated by three different MTJ STOs under different bias conditions. CMOS circuits, which can enhance the limited output power of MTJ STOs to levels that are required in different applications, are proposed, implemented and tested. A novel balun-low noise amplifier (LNA), which can offer sufficient gain, bandwidth and linearity for MTJ STO-based magnetic field sensing applications, is proposed. Additionally, a wideband amplifier, which can be connected to an MTJ STO to form a highly-tunable microwave oscillator in a phase-locked loop (PLL), is also proposed. The measurement results demonstrate that the proposed circuits can be used to develop MTJ STO-based magnetic field sensing and microwave source applications. The investigation of possible STO-CMOS IC integration approaches demonstrates that the wire-bonding-based integration is the most suitable approach. Therefore, a giant magnetoresistance (GMR) STO is integrated with its dedicated CMOS IC, which provides the necessary functions, using the wire-bonding-based approach. The RF characterization of the integrated GMR STO-CMOS IC system under different magnetic fields and DC currents shows that such an integration can eliminate wave reflections. These findings open the possibility of using GMR STOs in magnetic field sensing and microwave source applications. / <p>QC 20151112</p>

This dissertation focuses on one of the most active research areas in the microelectronics industry: Thermo-mechanical reliability of 3-D interconnects containing through-silicon-vias (TSVs). This study constitutes two parts: 1. Thermal stress measurement on TSVs; 2. Analyses on thermo-mechanical reliability of TSVs. In the first part, a metrology for stress measurement of through-silicon-via (TSV) structures was developed using a bending beam technique. The bending curvature induced by the thermal expansion of a periodic array of Cu TSVs was measured during thermal cycles. The stress components in TSV structures were deduced combining the curvature measurement with a finite-element-analysis (FEA). Temperature-dependent thermal stresses in Cu TSVs and in Si matrix were derived. In the second part, the reliability issues induced by the thermal stresses of TSVs were analyzed from several aspects, including the carrier mobility change in transistors, the interfacial delamination of TSVs, and thermal stress interactions between TSVs. Among them, the mobility change in transistors was found to be sensitive to the normal stresses near the Si wafer surface. The surface area of a high mobility change was defined as the keep-out zone (KOZ) for transistors. FEA simulations were carried out to calculate the area of KOZ surrounding TSVs. The area of KOZ was found to be mainly determined by the channel direction of the transistor as a result of anisotropic piezoresistivity effects. FEA simulations also showed that the KOZ can be controlled by TSV geometry, material selection, etc. Interfacial delamination of TSVs was found to be mainly driven by a shear stress concentration at the TSV/Si interface. Crack driving force for TSV delamination was calculated using FEA simulations, which take into account the magnitude of thermal load, TSV geometry, TSV materials, etc. The results provided a design guideline to improve the TSV delamination problem. In the last, the stress interaction among TSV arrays was examined using a bi-TSV model. In the Cartesian coordinate system, thermal stresses can be intensified or suppressed between TSVs, depending on how TSVs are located. Further analyses suggested that the area of KOZ and the TSV-induced Si cracking can both be improved by optimizing the arrangement of the TSV arrays. / text

The sigma-delta techniques for analog-to-digital conversion have for long been utilized when high precision is needed. Despite the fact that these have been realized by a numerous of different structures, the theory of how to construct a sigma-delta ADC is not very extensive. This thesis will assume that an SFG description of the CRFB sigma-delta modulator has been designed and presents a structured method to obtain a circuit realization of the integrators in a specific modulator. The first activity is to scale the inputs to each integrator in order to make sure that the produced outputs of each integrator is within the output-range of the OTA which is used. The next thing that is presented is an algorithmic way of descending from the SFG design of the modulator down to a switched-capacitor implementation of the system. To be able to continue with the circuit realization, one needs to do a rigorous noise analysis of the modulator, which gives the sizes of the different capacitors in the SC-circuits. The last topic of this thesis is a method to obtain the specifications of the OTA in each integrator.

The constant strive for improvement of digital video capturing speeds together with power efficiency increase, has lead to tremendous research activities in the image sensor readout field during the past decade. The improvement of lithography and solid-state technologies provide the possibility of manufacturing higher resolution image sensors. A double resolution size-up, leads to a quadruple readout speed requirement, if the same capturing frame rate is to be maintained. The speed requirements of conventional serial readout techniques follow the same curve and are becoming more challenging to design, thus employing parallelism in the readout schemes appears to be inevitable for relaxing the analog readout circuits and keeping the same capturing speeds. This transfer however imposes additional demands to parallel ADC designs, mainly related to achievable accuracy, area and power. In this work a 12-bit Cyclic ADC (CADC) aimed for column-parallel readout implementation in CMOS image sensors is presented. The aim of the conducted study is to cover multiple CADC sub-component architectures and provide an analysis onto the latter to a mid-level of depth. A few various Multiplying DAC (MDAC) structures have been re-examined and a preliminary redundant signed-digit CADC design based on a 1.5-bit modified flip-over MDAC has been conducted. Three comparator architectures have been explored and a dynamic interpolative Sub-ADC is presented. Finally, some weak spots degrading the performance of the carried-out design have been analyzed. As an architectural improvement possibility two MDAC capacitor mismatch error reduction techniques have been presented.

CMOS image sensor based on Active pixel sensor has considerably contributed to the imaging market and research interest in the past decade. Furthermore technology advancement has provided the capability to integrate more and more functionality into a single chip in multiple layers leading to a new paradigm, 3D integration. CMOS image sensor is one such application which could utilize the capability of 3D stacked architecture to achieve dedicated technologies in different layers, wire length reduction, less area, improved performancesThis research work is focused mainly on the early stages of design space exploration using hierarchical approach and aims at reducing time to market. This work investigates the imager from the top-down design perspective. Methodical anal y sis of imager is performed to achieve high level of flexibility and modularity. Re-useable models are developed to explore early design choices throughout the hierarchy. Finally, pareto front (providing trade off solutions) methodology is applied to explore the operating range of individual block at system level to help the designer making his design choice. Furthermore the thermal issues which get aggravated in the 3D stacked chip on the performance of the imager are studied. Systeme based thermal model is built to investigate the behavior of imager pixel matrix and to simulate the pixel matrix at high speed with acceptable accuracy compared to electrical simulations. The modular nature of the model makes simulations with future matrix extension straightforward. Validation of the thermal model with respect to electrical simulations is discussed. Finally an integrated design flow is developed to perform 3D floorplanning and to perform thermal anal y sis of the imager pixel matrix.

Dans cette thèse, nous étudions les architectures 3D NoC grâce à des implémentations de conception physiques en utilisant la technologie 3D réel mis en oeuvre dans l'industrie. Sur la base des listes d'interconnexions en déroute, nous procédons à l'analyse des performances d'évaluer le bénéfice de l'architecture 3D par rapport à sa mise en oeuvre 2D. Sur la base du flot de conception 3D proposé en se concentrant sur la vérification temporelle tirant parti de l'avantage du retard négligeable de la structure de microbilles pour les connexions verticales, nous avons mené techniques de partitionnement de NoC 3D basé sur l'architecture MPSoC y compris empilement homogène et hétérogène en utilisant Tezzaron 3D IC technlogy. Conception et mise en oeuvre de compromis dans les deux méthodes de partitionnement est étudiée pour avoir un meilleur aperçu sur l'architecture 3D de sorte qu'il peut être exploitée pour des performances optimales. En utilisant l'approche 3D homogène empilage, NoC topologies est explorée afin d'identifier la meilleure topologie entre la topologie 2D et 3D pour la mise en œuvre MPSoC 3D sous l'hypothèse que les chemins critiques est fondée sur les liens inter-routeur. Les explorations architecturales ont également examiné les différentes technologies de traitement. mettant en évidence l'effet de la technologie des procédés à la performance d'architecture 3D en particulier pour l'interconnexion dominant du design. En outre, nous avons effectué hétérogène 3D d'empilage pour la mise en oeuvre MPSoC avec l'approche GALS de style et présenté plusieurs analyses de conception physiques connexes concernant la conception 3D et la mise en œuvre MPSoC utilisant des outils de CAO 2D. Une analyse plus approfondie de l'effet microbilles pas à la performance de l'architecture 3D à l'aide face-à-face d'empilement est également signalé l'identification des problèmes et des limitations à prendre en considération pendant le processus de conception.

Scaling technology in deep-submicron has reduced the voltage supply level and increased the number of transistors in the chip, increasing the power supply noise sensitivity of the ICs. Excessive power supply noise affects the timing performance increasing the gate delay and may cause timing faults. Specifically, power supply noise induced by the currents that flow through the resistive parasitic elements of the Power Distribution Network (PDN) is called IR-Drop. This thesis deals with the modelling and simulation of logic circuits in the context of IR-drop. An original algorithm is proposed allowing to perform an event-driven delay simulation of the logic Block Under Test (BUT) while taking into account the whole chip IR-drop impact on the simulated block. To do so, we develop accurate and efficient electrical models for the currents generated by the switching gates, the propagation of the current draw through the PDN and the gate delays. First, the pre-characterization process for the dynamic currents, static currents and gate delays is described to generate a gate library. Then, another pre-characterization procedure is suggested to estimate the current distribution through the resistive PDN model. Our models are implemented in a first version of the simulator by the University of Passau in the context of a project collaboration. In addition, the impact of the parasitic capacitive elements of the PDN is analyzed and a procedure to derive the current distribution in a resistive-capacitive PDN model is proposed.

The conventional approach for testing RF circuits is specification-based testing, which involves verifying sequentially all specification requirements that are promised in the data sheet. This approach is a long-time effective testapproach but nowadays suffers from significant drawbacks.First, it requires generation and capture of test signals at the DUT operating frequency. As the operational frequencies of DUT are increasing, it becomes difficult to manage signal generation and capture using ATE. As a consequence, there is a need of expensive and specialized equipment. In addition,as conventional tests target several parameters, there is a need of several data captures and multiple test configurations. As a consequence, by adding settling time between each test and test application time, the whole test time becomes very long, and the test board very complex.Another challenge regarding RF circuit testing is wafer-level testing. Indeed, the implementation of specification-based tests at wafer level is extremely difficult due to probing issues and high parasitic effects on the test interface.Moreover, multi-site testing is usually not an option due to the small count of available RF test resources, which decreases test throughput. Hence, the current practice is often to verify the device specifications only after packaging.The problem with this solution is that defective dies are identified late in the manufacturing flow, which leads to packaging loss and decreases the global yield of the process.In order to reduce production costs, there is therefore a need to develop test solutions applicable at wafer level, so that faulty circuits can be removed very early in the production flow. This is particularly important for dies designed to be integrated in Systems-In-Package (SIP).In this context, a promising solution is to develop indirect test methods. Basically, it consists in using DUT signatures to non-conventional stimuli to predict the result of conventional tests. The underlying idea is to learn during an initial phase the unknown dependency between simple measurements and conventional tests. This dependency can then be modeled through regression functions. During the testing phase, only the indirect measurements are performed and specifications are predicted using the regression model built in the learning phase.Our work has been focused on two main directions. First, we have explored the implementation of the alternate test method based on DC measurements for RF circuits and we have proposed a methodology to select the most appropriateset of DC parameters. Results from two test vehicles (a LNA using electrical simulations and a PA using real production data) indicate that the proposed methodology allows precise estimation of the DUT performances while minimizing the number of DC measurements to be carried out.Second, we have proposed a novel implementation of the alternate test strategy in order to improve confidence in alternate test predictions and to overcome the effect of limited training set sizes. The idea is to exploit model redundancy in order to identify, during the production testing phase, devices with suspect predictions; these devices are then are removed from the alternate test tierand directed to a second tier where further testing may apply.

The author focuses on the possibility of using wood chips as fuel for tractors and machinery in agriculture and related fields, in order to increase self-sufficiency and achieving carbon neutrality. The work compares wood and conventional motor fuels in the real operation. Part of this thesis is to design a functional device with an output of 5-10 kW.

Magister Scientiae - MSc (Physics) / Electron-mediated nuclear plasma interactions (NPIs), such as Nuclear Excitation by Electron Capture (NEEC) or Transition (NEET), can have a signi cant impact on nuclear cross sections in High Energy Density Plasmas (HEDPs). HEDP environments are found in nuclear weapons tests, National Ignition Facility (NIF) shots and in the cosmos where nucleosynthesis takes place. This thesis explores the impact of NPIs on highly excited nuclei. This impact is understood to be more intense in highly-excited nuclei states in the quasi-contiuum which is populated by nuclear reactions prior to their decay by spontaneous -ray emission.