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Thanks to high Tc of 40 K, high Jc of > 10^7 A.cm^-2, and no weak link behavior across the grain boundary in MgB2 material. This highest Tc among all conventional BCS superconductors, and better material properties of MgB2 compared to high Tc cuprate superconductors makes this material attractive for many applications including, but not limited to, power cables, Josephson junction based electronic devices, SRF cavities, THz sensors and single photon counters. Ultrathin superconducting films are a key element in various detectors utilized in remote sensing over a large part of the entire electromagnetic spectrum. The superconducting hot electron bolometer (HEB) mixer is a crucial detector for high-resolution spectroscopy at THz frequencies. The state-of-the-art NbN phonon-cooled HEB mixers have a relatively narrow (IF) bandwidth ~ 3- 4 GHz as a direct result of the poor acoustic transparency of the film-substrate interface and low sound velocity in NbN reducing the phonon escape time in the film. Alternatively, MgB2 displays a very short τe-ph ~ ps. The phonon escape time is also short due to the high sound velocity in the material (~ 7 Km.s^-2) thus giving rise to a broader IF bandwidth. Also, smaller magnetic penetration depth (λ ≈ 40 nm) of MgB2 makes material of choices for single photon detector application. The response time of an SNSPD is proportional to the square of its magnetic penetration depth λ. Therefore, MgB2 may potentially operate 10-fold faster than the NbN (λ =200 nm) based SNSPD. In this work, I present my effort to fabricate high quality ultrathin superconducting MgB2 films on 6H-SiC (0001) substrates, and study their superconducting and electronic properties. C- epitaxial 10 nm showed Tc of above 36 K, while residual resistivity of up to 26 μΩ.cm was achieved. Critical currents of more than 6 × 10^6 A · cm^−2 at 20 K have been measured for the films with thicknesses iv ranging from 10 to 100 nm. Fishtail structures have been observed in the magnetic field dependence of the critical current density for the thinnest of these films, indicating the presence of defects, which act as vortex pinning centers. From the magnetic field dependence, an average distance between adjacent pinning centers of 35 nm has been obtained for the thinnest films. Ultrathin film as thin as 1.8 nm (6 unit cells) can be achieved by Hybrid Physical-Chemical Vapor Deposition (HPCVD) followed by low angle Ar ion milling. These post processed films exhibit better superconducting properties compared to directly grown films. The 1.8 nm, showed Tc > 28 K and Jc > 10^6 A/cm^2 4 K. The surface roughness of the films was significantly improved and the suppression of Tc from the bulk value is much slower in milled films than in as-grown films. These results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit. Finally, I measured the upper critical field of MgB2 films of various thickness and extracted their thickness dependent in-plane intraband diffusivities by using Gurevich model developed for two-band MgB2 superconductor in dirty limit. Results showed that π band diffusivity (Dπ) decreases rapidly from 71.12 cm^2/s for 100 nm film to 4.6 cm^2/s for 5 nm film where as �� band diffusivity (����) decreases much slower from 2.8 cm^2/s for 100 nm film to 0.8 cm^2/s for 5 nm film. This larger Dπ than ���� indicates the cleaner π band. / Physics

In 1997 the Federal Communications Commission (FCC) released 300 MHz of spectrum between 5-6 GHz designated the unlicensed national information infrastructure (U-NII) band. The intention of the FCC was to provide an unlicensed band of frequencies that would enable high-speed wireless local area networks (WLANs) and facilitate wireless access to the national information infrastructure with a minimum interference to other devices. Currently, there is a lack of cost-effective technologies for developing U-NII band components. With the commercial market placing emphasis on low cost, low power, and highly integrated implementations of RF circuitry, alternatives to the large and expensive distributed element components historically used at these frequencies are needed. Silicon Germanium (SiGe) BiCMOS technology represents one possible solution to this problem. The SiGe BiCMOS process has the potential for low cost since it leverages mature Si process technologies and can use existing Si fabrication infrastructure. In addition, SiGe BiCMOS processes offer excellent high frequency performance through the use of SiGe heterojunction bipolar transistors (HBTs), while coexisting Si CMOS offers compatibility with digital circuitry for high level 'system-on-a-chip' integration. The work presented in this thesis focuses on the development of a SiGe RFIC front-end for operation in the U-NII bands. Specifically, three variants of a packaged low noise amplifier (LNA) and a packaged active x2 sub-harmonic mixer (SHM) have been designed, simulated and measured. The fabrication of the Rifts was through the IBM SiGe foundry; the packaging was performed by RF Micro devices. The mixer and LNA designs were fabricated on separate die, packaged individually, and on-chip matched to a 50 ohm system so they could be fully characterized. Measurements were facilitated in a coaxial system using standard FR4 printed circuit boards. The LNA designs use a single stage, cascoded topology. The input ports are impedance matched using inductive emitter degeneration through bondwires to ground. One version of the LNA uses an shunt inductor/series capacitor output match while the other two variation use a series inductor output match. Gain, isolation, match, linearity and noise figure (NF) were used to characterize the performance of the LNAs in the 5 - 6 GHz frequency band. The best LNA design has a maximum gain of 9 dB, an input VSWR between 1.6:1 and 2:1, an output match between 1.7:1 and 3.6:1, a NF better than 3.9 dB and an input intercept point (IIP3) greater than 5.4 dBm. The LNA operates from a 3.3 V supply voltage and consumes 4 mA of current. The SHM is an active, double-balance mixer that achieves x2 sub-harmonic mixing through two quadrature (I/Q) driven, stacked Gilbert-cell switching stages. Single-ended-to-differential conversion, buffering and I/Q phase separation of the LO signal are integrated on-chip. Measurements were performed to find the optimal operating range for the mixer, and the mixer was characterized under these sets of conditions. It was found that the optimal performance of the mixer occurs at an IF of 250-450 MHz and an LO power of -5 dBm. Under these conditions, the mixer has a measured conversion gain of 9.3 dB, a P_1-dB of -15.7 dBm and an 2LO/RF isolation greater than 35 dB at 5.25 GHz. At 5.775 GHz, the conversion gain is 7.7 dB, the P_1-dB is -15.0 dBm, and the isolation is greater than 35 dB. The mixer core consumes 9.5 mA from a 5.0 V supply voltage. This work is sponsored by RF Microdevices (RFMD)through the CWT affiliate program.The author was supported under a Bradley Foundation fellowship. / Master of Science