Die vorliegende Arbeit behandelt die Modellierung einer Quantenpunkt-LED und die Berechnung des elektrischen Stromes und der Lichtproduktion im Landauer-Büttiker-Formalismus. Die Elektron-Photon-Wechselwirkung kann im Landauer-Büttiker-Formalismus behandelt werden, indem wir annehmen, dass jedes Elektron mit einem separaten Photonenfeld interagiert. Dies erlaubt es uns, ein Elektron zusammen mit seinem Photonenfeld als „einzelnes, nicht wechselwirkendes Teilchen“ im Sinne des Landauer-Büttiker-Formalismusses zu betrachten. Wir entwickeln ein Modell einer QP-LED, dessen Elektron-Photon-Wechselwirkung auf dem Jaynes-Cummings-Modell basiert, das die Interaktion eines Quantenpunkts mit einer Mode des elektromagnetischen Feldes beschreibt. Um auch die Energieverteilung der emittierten Photonen analysieren zu können, schlagen wir ein auf einem Pauli-Fierz-Modell basiertes Modell vor. Anstelle einer einzelnen Mode modelliert es Photonen beliebiger Energie, allerdings beschränken wir uns auf den Unterraum mit maximal einem Photon. Wir beweisen eine abstrakte Landauer-Büttiker-Formel, die für alle relativ nuklearen Streusysteme gilt. Sie ist ähnlich zu dem Ergebnis von Aschbacher et al. (2007), unterscheidet sich aber in der Regularisierung des Stroms. Wir wenden das abstrakte Ergebnis auf die Jaynes-Cummings-QP-LED an. Als Startpunkt für die Berechnung der Streumatrix verallgemeinern wir die Darstellung der Streumatrix durch die Weyl-Funktion eines Randwert-Triplets von Behrndt et al. (2010) vom Fall für Störungen endlichen Ranges auf den Fall relativ nuklearer Störungen. Dies deckt insbesondere den Fall der Jaynes-Cummings-QP-LED ab. Die Resolventendifferenz der Pauli-Fierz-QP-LED ist nicht nuklear, weshalb wir eine verallgemeinerte Landauer-Büttiker-Formel für eine gewisse Klasse von Multiplikationsoperatoren beweisen, die in der Faser nuklear sind. Dieses abstrakte Resultat liefert uns auch für die Pauli-Fierz-QP-LED eine Landauer-Büttiker-Formel. / This thesis treats the modeling of a quantum dot LED and the calculation of the electric current and the light production in the Landauer-Büttiker framework. The electron-photon interaction is fitted into the Landauer-Büttiker framework by assuming that every electron interacts with a separate photon field. It allows us to consider an electron together with its photon field as a ''single non-interacting particle'' in the sense of the Landauer-Büttiker formalism. We develop a model of a QD-LED with an electron-photon interaction that is based on the Jaynes-Cummings model, which describes the interaction of a quantum dot with a single mode of the electromagnetic field. To be able to analyze the energy distribution of the emitted photons, we propose a second model of a QD-LED that is based on a one-dimensional Pauli-Fierz model. It models photons of arbitrary positive energy instead of just a single mode, but we restrict it to the subspace of at most one photon. We prove an abstract Landauer-Büttiker formula that applies to all relatively trace class interactions. It is similar to the result by Aschbacher et al. (2007), but differs in the regularization of the flux. We apply this formula to the Jaynes-Cummings QD-LED. Since knowing of the scattering matrix is essential for explicit calculations with the Landauer-Büttiker formula, we generalize a result by Behrndt et al. (2010) on a representation of the scattering matrix in terms of the Weyl function of a boundary triplet from the finite rank case to relatively trace class perturbations, which covers the case of the Jaynes-Cummings QD-LED. The resolvent difference of the Pauli-Fierz QD-LED is not trace class, whence we prove a generalized Landauer-Büttiker formula for a certain multiplication operators that are trace class in the fiber. This abstract result gives us a Landauer-Büttiker formula also for the Pauli-Fierz QD-LED.

Das gitterfehlangepaßte Kristallwachstum führt unter bestimmten Bedingungen zu einem 3-D Wachstumsmodus, der oft Stranski-Krastanow-Wachstum genannt wird. Resultierende Strukturgrößen liegen in der Größenordnung 10 nm und die Halbleiterstrukturen besitzen daher Quanteneigenschaften. Sie stehen im Fokus grundlagenwissenschaftlichen Interesses, da künstliche Atome und Dimensionalitätseffekte an ihnen untersucht werden können. Auch von der Anwendungsseite wächst das Interesse, da niederdimensionale Strukturen hoher Kristallqualität und mit hoher gestalterischer Freiheit geschaffen werden können. In dieser Arbeit wurden Mischhalbleiter-Heterostrukturen der Dimensionalität d= 0,1 und 2 mittels Gasphasen-MBE hergestellt. Ziel war eine Korrelation der strukturellen mit den elektronischen und optischen Eigenschaften. Selbstformierende Quantendrähte und Quantenpunkte in leitfähigen Kanälen wurden in ihrem Einfluß auf den lateralen Transport untersucht. Weiterhin wird dargestellt, wie zusätzliche, durch Quantenpunkte induzierte Oberflächenzustände eine deutliche Verschiebung der Energie des Oberflächen-Ferminiveau-Pinning einer (100)-GaAs-Oberfläche verursachen. Der senkrechte Elektronentransport durch Quantenpunkte dient der Untersuchung von Dot-induzierten, tiefen elektronischen Zuständen und der Erklärung eines eindimensionalen Modells elektronischer Kopplung zwischen denselben. Zusätzlich führen uns die Ergebnisse optischer Messungen zu einem besseren Verständnis des Vorgangs der Dotformierung und der elektronischen Kopplung zwischen zufällig verteilten Quantenpunkten. / The lattice-mismatched epitaxial growth is known to induce a three-dimensional growth mode often referred to as Stranski-Krastanov growth. The resulting structures have typical sizes of 10 nm and possess quantum properties, which are of fundamental physical interest, since artificial atoms and dimensionality effects can be studied. There is a growing interest from an applicational point of view also, since low dimensional structures of a high crystal quality and of a high degree of designerabillity can be created. In this work such structures of a dimensionality d=0,1 and 2 based on compound semiconductors have been designed and prepared by molecular beam epitaxy to perform comparative studies with respect to their electronic, structural and optical properties. Self assembled quantum wires and dots in conductive channels have been examined according to their influence on lateral electrical transport. It is demonstrated how additional surface states from quantum dots cause a distinct shift in the Surface Fermi-level of a GaAs (100) surface. Vertical transport through dots is used to support a model of one-dimensional coupling between deep states induced by the dots. Additionally, optical investigations let us attain a better understanding of the process of dot formation and the electronic coupling between the randomly distributed dots.

In dieser Arbeit werden erstmals die nichtlinearen optischen Eigenschaften einzelner Halbleiterquantenpunkte mit Femtosekunden-Zeitauflösung untersucht und dargestellt. Insbesondere die Besetzungs- und Polarisationsdynamik eines einzelnen Halbleiterquantenpunkts wird diskutiert. Zur Durchführung der Experimente wird eine neuartige Messmethode entwickelt und eingesetzt: die Femtosekunden-Nahfeldspektroskopie. Die Kombination aus fs-Anrege-Abtast-Spektroskopie und optischer Nahfeldspektroskopie ermöglicht es, die nichtlinearen optischen Eigenschaften eines einzelnen Quantenpunkts mit hoher räumlicher, temporaler und spektraler Auflösung bei Temperaturen von 10 K bis 300 K zu untersuchen. Das zu diesem Zweck weiter entwickelte optische Nahfeldmikroskop bietet eine hohe räumliche Auflösung von bis zu 150 nm. Die Einführung einer neuartigen optischen Abstandsregelkontrolle sichert identische experimentelle Bedingungen über zahlreiche Stunden, ohne daß mechanische Wechselwirkungen zwischen den untersuchten Strukturen und dem apparativen Aufbau die Ergebnisse negativ beeinflussen. Durch die Kombination dieses Nahfeldmikroskops mit einem klassischen fs-Anrege-Abtast-Aufbau können die nichtlineare optische Eigenschaften einzelner Quantenpunkte mit einer Zeitauflösung von bis zu 150 fs untersucht werden. Zur Charakterisierung der Mehrfachquantenfilmprobe werden die linearen optischen Eigenschaften einzelner Interface Quantenpunkte mit Hilfe der stationären Methoden der Photolumineszenzspektroskopie und Photolumineszenz-Autokorrelationsspektroskopie untersucht und analysiert. Dadurch bietet sich die Möglichkeit der gezielten Untersuchung der räumlichen Statistik lokalisierter Zustände. Einblick in die räumliche Unordnung des zugrundeliegenden Potentialverlaufs kann gewonnen werden. In PL-Emission wird der Übergang von homogen verbreiterten Emissionslinien dicker Quantenfilme in ein inhomogen verbreitertes Emissionsspektrum bei gleichzeitiger Beobachtung spektral scharfer Emissionslinien einzelner lokalisierter Exzitonenresonanzen mit Abnahme der Filmdicke beobachtet. In PL-Autokorrelationsexperimenten wird ein zweites ausgeprägtes Korrelationsmaximum beobachtet. Dieses wird einem angeregten lokalisierten und optisch aktiven Zustand zugeschrieben. Die beobachtete Energiedifferenz zwischen Exzitonengrundzustand und dem beobachteten angeregten Zustand ermöglicht eine Abschätzung des Dipolmoment zu 40-50D und der Ausdehnung von Quantenpunkte von ca. 50nm. Zeitaufgelöste Untersuchungen an interface Quantenpunkten werden mit einer spektralen Auflösung von 60 µeV in Reflexionsgeometrie durchgeführt. Diese gestatten zum einen die Bestimmung der Lebensdauer und Dipolmomente lokalisierter Exzitonenzustände. Zum anderen ist eine nahezu vollständige Rekonstruktion der Polarisationsdynamik nach optischer Anregung möglich. Grossen Einfluss auf die spektrale Form der detektierten Reflektivitätsänderung besitzt die Tiefe unter der ein Quantenpunkt unter der Oberfläche vergraben ist. Diese Tiefenabhängigkeit wird in dieser Arbeit genauer untersucht und analysiert. Weiterhin wird erstmals die Polarisationsdynamik in einem einzelnen Quantenpunkt mit fs-Zeitauflösung untersucht und analysiert. Wird die durch den Abtastimpuls getriebene Polarisation nicht durch Wechselwirkung mit einem zweiten Impuls gestört, wird eine exponentielle zeitliche Abnahme der Polarisation mit der durch die homogenen Linienbreite bestimmten Dephasierungszeit ermittelt. Vielteilchenwechselwirkung nach nichtresonanter Anregung mit einem Anregeimpuls führt zur Änderung der Polarisationsdynamik lokalisierter Zustände und zur Beobachtung nichtverschwindender Reflektivitätsänderungen zu negativen Verzögerungszeiten. Als dominanter Mechanismus der in den zeitaufgelösten Experimenten vorherrschenden Vielteilchenwechselwirkung wird ein anregungsinduziertes Dephasieren nachgewiesen. / In this thesis the first study of nonlinear optical properties of single Quantum Dots with femtosecond time resolution is presented. Especially the population and polarization dynamics in a single semiconductor quantum dot will be discussed. To achieve this goal a new experimental technology is developed, giving the possibility to investigate the temporal dynamics of a single quantum dot within a temperature range between 10 and 300 K. Hereby the combination of a standard pump-probe setup with a near-field microscope for variable temperatures allows highest temporal, spectral and spatial resolution of up to 100 fs, 60 ueV and 150 nm respectively. The introduction of a new optical distance control enables the investigation of nonlinear optical properties of a single quantum dot in reflection geometry without any restrictions due to masking or stress effects. In first experiments the linear optical properties of single interface Quantum Dots in the multiple quantum well structure is characterized and analyzed via PL- and PL-autocorrelation spectroscopy. Knowledge of the spatial statistics of localized states can be gained. Insight into correlation of the underlying disorder potential is achieved. By investigating different quantum wells the crossover from a homogeneous broadened emission spectra of thick quantum films to an inhomogeneous broadened emission spectra is observed accompanied by the occurrence of sharp emission peaks from localized excitons. In PL-Autocorrelation experiments a second pronounced correlation maximum is observed. This correlation maximum can be explained by a localized excited and optical active resonance in a single quantum dot. The energy difference between the localized ground state and the first excited state of about 3 meV allows a rough estimate of underlying dipole moments to 40-50 D and the extent of isolated quantum dots to 50 nm. Time resolved experiments on interface quantum dots are performed with a spectral resolution of 60 µeV in reflection geometry, allowing on one hand the determination of population life times and dipole moments of localized exciton states. On the other hand a nearly complete reconstruction of the polarization dynamics is possible. Large influence on spectral shape of the reflectivity change is given by the distance between interface quantum dots and the sample surface. This burying depth dependence will discussed and analyzed in detail within this thesis. Moreover polarization dynamics in a single quantum dot is investigated with fs-resolution. If the polarization driven by the probe pulse is not disturbed by a second light pulse, an exponential decay of the polarization amplitude with an decay time determined by the homogeneous line width is observed. Many body interaction after excitation by a non-resonant pump-pulse causes changes in the polarization dynamics of localized states at negative delay times. As prominent mechanism of many-body interactions governing the experiments an excitation induced dephasing will be determined.

Lasers find a wide range of applications in many areas including photo-biology, photo-chemistry, materials processing, imaging and telecommunications. However, the practical use of such sources is often limited by the bulky nature of existing systems. By fabricating channel waveguides in solid-state laser-gain materials more compact laser systems can be designed and fabricated, providing user-friendly sources. Other advantages inherent in the use of waveguide gain media include the maintenance of high intensities over extended interaction lengths, reducing laser thresholds. This thesis presents the development of Yb:tungstate lasers operating around 1μm in waveguide geometries. An Yb:KY(WO₄)₂ planar waveguide laser grown by liquid phase epitaxy is demonstrated with output powers up to 190 mW and 76 % slope efficiency. This is similar to the performance from bulk lasers but in a very compact design. Excellent thresholds of only 40 mW absorbed pump power are realised. The propagation loss is found to be less than 0.1 dBcm⁻¹ and Q-switched operation is also demonstrated. Channel waveguides are fabricated in Yb:KGd(WO₄)₂ and Yb:KY(WO₄)₂ using ultrafast laser inscription. Several of these waveguides lase in compact monolithic cavities. A maximum output power of 18.6 mW is observed, with a propagation loss of ~2 dBcm⁻¹. By using a variety of writing conditions the optimum writing pulse energy is identified. Micro-spectroscopy experiments are performed to enable a fuller understanding of the induced crystal modification. Observations include frequency shifts of Raman lines which are attributed to densification of WO₂W bonds in the crystal. Yb:tungstate lasers can generate ultrashort pulses and some preliminary work is done to investigate the use of quantum dot devices as saturable absorbers. These are shown to have reduced saturation fluence compared to quantum well devices, making them particularly suitable for future integration with Yb:tungstate waveguides for the creation of ultrafast, compact and high repetition rate lasers.

L’imagerie médicale a longtemps été limitée à cause des performances médiocres des fluorophores organiques. Récemment la recherche sur les nanocristaux semi-conducteurs a grandement contribué à l’élargissement de la gamme d’applications de la luminescence dans les domaines de l’imagerie et du diagnostic. Les points quantiques (QDs) sont des nanocristaux de taille similaire aux protéines (2-10 nm) dont la longueur d’onde d’émission dépend de leur taille et de leur composition. Le fait que leur surface peut être fonctionnalisée facilement avec des biomolécules rend leur application particulièrement attrayante dans le milieu biologique. Des QDs de structure « coeur-coquille » ont été synthétisés selon nos besoins en longueur d’onde d’émission. Dans un premier article nous avons modifié la surface des QDs avec des petites molécules bi-fonctionnelles portant des groupes amines, carboxyles ou zwitterions. L’effet de la charge a été analysé sur le mode d’entrée des QDs dans deux types cellulaires. À l’aide d’inhibiteurs pharmacologiques spécifiques à certains modes d’internalisation, nous avons déterminé le mode d’internalisation prédominant. L’endocytose par les radeaux lipidiques représente le mode d’entrée le plus employé pour ces QDs de tailles similaires. D’autres modes participent également, mais à des degrés moindres. Des disparités dans les modes d’entrée ont été observées selon le ligand de surface. Nous avons ensuite analysé l’effet de l’agglomération de différents QDs sur leur internalisation dans des cellules microgliales. La caractérisation des agglomérats dans le milieu de culture cellulaire a été faite par la technique de fractionnement par couplage flux-force (AF4) associé à un détecteur de diffusion de la lumière. En fonction du ligand de surface et de la présence ou non de protéines du sérum, chacun des types de QDs se sont agglomérés de façon différente. À l'aide d’inhibiteur des modes d’internalisation, nous avons corrélé les données de tailles d’agglomérats avec leur mode d’entrée cellulaire. Les cellules microgliales sont les cellules immunitaires du système nerveux central (CNS). Elles répondent aux blessures ou à la présence d’inflammagènes en relâchant des cytokines pro-inflammatoires. Une inflammation non contrôlée du CNS peut conduire à la neurodégénérescence neuronale et est souvent observée dans les cas de maladies chroniques. Nous nous sommes intéressés au développement d’un nanosenseur pour mesurer des biomarqueurs du début de l’inflammation. Les méthodes classiques pour étudier l’inflammation consistent à mesurer le niveau de protéines ou molécules relâchées par les cellules stressées (par exemple monoxyde d’azote, IL-1β). Bien que précises, ces méthodes ne mesurent qu’indirectement l’activité de la caspase-1, responsable de la libération du l’IL-1β. De plus ces méthode ne peuvent pas être utilisées avec des cellules vivantes. Nous avons construit un nanosenseur basé sur le FRET entre un QD et un fluorophore organique reliés entre eux par un peptide qui est spécifiquement clivé par la caspase-1. Pour induire l’inflammation, nous avons utilisé des molécules de lipopolysaccharides (LPS). La molécule de LPS est amphiphile. Dans l’eau le LPS forme des nanoparticules, avec des régions hydrophobes à l’intérieure. Nous avons incorporé des QDs dans ces régions ce qui nous a permis de suivre le cheminement du LPS dans les cellules microgliales. Les LPS-QDs sont internalisés spécifiquement par les récepteurs TLR-4 à la surface des microglies. Le nanosenseur s’est montré fonctionnel dans la détermination de l’activité de la caspase-1 dans cellules microgliales activées par le LPS. Éventuellement, le senseur permettrait d’observer en temps réel l’effet de thérapies ciblant l’inflammation, sur l’activité de la caspase-1. / Medical imaging based on fluorescence has suffered from the poor photostability and mediocre performance of organic fluorophores. The discovery and subsequent improvements in nanocrystal synthesis and functionalization has greatly benefited the applications in medical imaging and the development of nanocrystal-based sensors for diagnostics. QDs are semi-conductor nanocrystals which have similar sizes as proteins (2-10 nm). They are highly luminescent, and can be made to emit at any desired wavelength by varying their size and composition. The surface of QDs can be easily functionalized with biomolecules. Hence, it is interesting to study how QDs interact in the biological world. Highly luminescent core-shell QDs emitting at different wavelengths were prepared according to our needs. In a first study, the surface of the QDs was modified with various small bi-functional thiolated ligands (carboxylated, aminated and zwitterionic). The modified-QDs of nearly identical sizes were administered in vitro to study the impact of surface charge and cell type on the mode and extent of cell uptake and elimination. Using specific inhibitors of cell uptake we determined which modes contributed to the internalization of the QDs. Endocytosis mediated by lipid rafts represented the predominant pathway for the internalization of QDs. However, other modes contributed to a lesser degree, depending on the surface ligand. We then analyzed the effect of QD agglomeration in cell culture media on its cellular uptake by microglia. Thorough characterization of QD agglomerate size distribution was conducted by asymmetrical flow field-flow fractionation (AF4) with a dynamic light scattering detector. Depending on the type of surface ligand and if serum proteins were present, the agglomeration pattern of the QDs was significantly different. With inhibitors of specific modes of cell uptake, we showed that the size distribution data, obtained by AF4, correlated with the modes of cell uptake. Microglia cells are immune cells of the central nervous system (CNS). They respond to injury or the presence of inflammagens by producing pro-inflammatory cytokine. Inflammation in the CNS may lead to loss of neurons, and can found in many chronic diseases. We were interested in building nanosensors to measure the onset of inflammation. Current methods to study inflammation consist in measuring levels of certain proteins or chemicals released by stressed cell (e.g. Western blot or ELISA assay for IL-1β). Although precise, these methods measure indirectly the activity of the enzyme responsible for releasing IL-1β, i.e. caspase-1. Moreover, these methods cannot be applied to live cells. We designed a sensor based on FRET between a QD and a dye linked by a peptide specifically cleaved by the caspase-1. To induce inflammation, we applied lipopolysaccharides (LPS), which are endotoxins present in Gram negative bacteria responsible for sceptic shock. The LPS form nanoparticles due to their amphiphilicity. The interior hydrophobic regions were used to load hydrophobic QDs, making the LPS luminescent. The microglia internalized LPS-QD predominantly through TLR-4 membrane receptors. We describe how the LPS induce inflammation and demonstrated the functionality of the QD-based sensor. Eventually, the sensor could be used to monitor in real time the action of therapeutics against inflammation.

L’intégration de semiconducteurs III-V à gap direct sur silicium est un enjeu de taille pour le développement de l’optoélectronique. En effet, si le silicium est aujourd’hui à la base de la microélectronique, la nature indirecte de son gap en fait un très mauvais émetteur de lumière. Parmi les matériaux candidats à l’intégration, l’In(Ga)As présente l’avantage d’un gap direct plus faible que le silicium, favorisant un comportement de puits de potentiel pour les paires électrons-trous. En revanche, le fort désaccord paramétrique entre les deux matériaux fait de la croissance épitaxiale d’In(Ga)As sur silicium un sérieux défi pour le physicien. Cette thèse est focalisée sur l’étude par faisceaux d’ions de boîtes quantiques (BQs) d’In(Ga)As épitaxiées sur silicium et de leur encapsulation ultérieure par du silicium. L’analyse par rétrodiffusion élastique à haute énergie (RBS) a permis de quantifier la composition des îlots d’In(Ga)As et de la couche cap de Si. Des phénomènes d’exo-diffusion d’indium et la présence d’espèces en excès ont été mis en évidence. En pratiquant l’analyse en géométrie de canalisation (RBS-C), nous avons pu caractériser l’épitaxie des BQs sur le substrat ainsi que celle de la couche cap. La deuxième technique utilisée dans ce travail est l’analyse par rétrodiffusion élastique à moyenne énergie (MEIS), qui permet de profiler composition, défauts cristallins, et déformation avec une résolution sub-nanométrique au voisinage de la surface de la cible. Les spectres MEIS en modes aléatoire et canalisé ont permis d’obtenir le profil de composition et de défauts du plan de BQs. Enfin, la déformation du cristal d’In(Ga)As par rapport au monocristal de silicium du substrat a été étudiée grâce à l’effet de blocage du flux d’ions rétrodiffusés qui permet d’observer les ombres des axes et des plans cristallographiques. / The integration on silicon of direct band gap materials such as some semiconductors from the III-V group is of a rising interest for tomorrow's optoelectronic devices. Although silicon is the raw material for many microelectronic devices, it has a poor light emitting efficiency due to his indirect band gap. Among the III-V family, the In(Ga)As compounds present the advantage of a smaller band gap than silicon, which encourage the confinement of electron-hole pairs. However, the large lattice mismatch between silicon and In(Ga)As is a serious limitation for the epitaxial integration. This PhD work has been focused on the ion beam study of In(Ga)As quantum dots (QDs) grown by epitaxy on silicon and of the QD capping by silicon. Rutherford Backscattering Spectrometry (RBS) has been used to quantify composition of both QDs and cap layer. Exo-diffusion and excess issues of some elements have been pointed out. The epitaxial relation between QDs and substrate have been investigated by ion channelling (RBS-C). Medium Energy Ion Scattering (MEIS) has also been used to obtain high resolution profiles of composition, defects and strain for both the QD plane and the capping layer. Direct space mapping of both crystals has also been achieved by MEIS thanks to the blocking effect.

In this thesis, geometry is used as a basis for conducting experiments aimed at growing and arranging inorganic minerals on curved interfaces. Mineralisation is directed using crystalline and liquid-crystalline metallic soaps and surfactant/water systems as templates.¶ A review of the history, syntheses, structure and liquid crystallinity of metallic soaps and other amphiphiles is presented as a foundation to understanding the interfacial architectures in mesostructured template systems in general.¶ In this study, a range of metallic soaps of varying chain length and cation type are synthesised and characterised to find potentially useful templates for mineral growth. These include alkaline-earth, transition metal, heavy metal and lanthanide soaps. These are systematically characterised using a variety of analytical techniques, including chemical analyses, x-ray diffraction (XRD) infrared spectroscopy (IR) and differential scanning calorimetry (DSC). Their molecular and crystal structures are studied using transmission electron microscopy (TEM), cryo-TEM, electron diffraction (ED), electron paramagnetic spin resonance (EPR), absorption spectroscopy (UV-VIS), high resolution laser spectroscopy, atomic force microscopy (AFM), nuclear magnetic resonance spectroscopy, scanning electron microscopy (SEM), electron dispersive x-ray analysis (EDXA), thermal gravimetric analysis (TGA) and magnetic measurements. Models for the molecular and crystal structures of metallic soaps are proposed. The soaps are predominantly lamellar crystalline or liquid crystalline lamellar rotor phases with tilted and/or untilted molecular constituents. These display evidence of varying degrees of headgroup organisation, including superstructuring and polymerisation. A single crystal structure is presented for a complex of pyridine with cobalt soap. Simple models for their structure are discussed in terms of their swelling properties in water and oils. Experiments are also presented to demonstrate the sorbent properties of aluminium soaps on oil spills.¶ The thermotropic liquid crystallinity of alkaline earth, transition metal, heavy metal and lanthanide soaps is investigated in detail. This is done to assess their suitability as templates, and to document their novel thermotropic behaviour, particularly the relatively unknown lanthanide soaps. Liquid crystalline behaviours are studied using high-temperature XRD (HTXRD), hot-stage optical microscopy and DSC. Models for a liquid crystalline phase progression from crystals to anisotropic liquids are discussed in terms of theories of self-assembly and interfacial curvature. The terminology required for this is drawn from various nomenclature systems for amphiphilic crystals and liquid crystals. General agreement with previous studies is reported for known soaps, while liquid crystallinity is demonstrated in the lanthanide and some non-lanthanide soaps for the first time. A general phase progression of crystalline lamellar through liquid crystalline lamellar to non-lamellar liquid crystalline is discussed in terms of models concerned with the molecular and crystal structures of the soaps and their phase transitions via headgroup and chain re-arrangements.¶ Experiments aimed at guiding growth of metal sulfides using metallic soaps as templates are described, and a model for this growth is discussed. Metal sulfides have been successfully grown by reacting crystalline and liquid crystalline transition metal and heavy metal soaps with H2S gas at room temperature and at elevated temperature. These have been characterised using XRD, TEM, ED and IR. Sulfide growth is demonstrated to be restricted and guided by the reacting soap template architecture. Zinc, cadmium, indium and lead soaps formed confined nanoparticles within the matrix of their reacting soap template. In contrast, curved and flat sheet-like structures, some resembling sponges were found in the products of sulfided iron, cobalt, nickel, copper, tin and bismuth soaps. A model to explain this behaviour is developed in terms of the crystal and liquid crystal structures of the soaps and the crystal structures of the metal sulfide particles.¶ Liquid crystalline iron soaps have been subjected to controlled thermal degradation yielding magnetic iron oxide nanoparticles. Some XRD and TEM evidence has been found for formation of magnetic mesostructures in heat-treated iron soaps. Models for the molecular and liquid crystalline structure of iron soaps, their thermotropic phase progression and eventual conversion to these magnetic products are discussed. Systematic syntheses of mesoporous silicates from sheeted clays are discussed.¶The templates that have been used are cationic surfactants and small, organic molecular salts. Experiments are reported where a cooperative self-assembly of surfactant/water/kanemite plus or minus salt and oils yields 'folded sheet materials' (FSM'S). Templating of kanemite has also been achieved using cobalt cage surfactants. A theoretical prediction of the specific surface areas and specific volumes of homologous sets of FSM's gave excellent agreement with measured values. The geometry and topology of the mesostructures are discussed. A theoretical model is also discussed regarding the curvature found in the sheets of natural clays , and results of templating clays and silica using metallic soaps are presented. Experiments and a model for low temperature nucleation and growth of microporous silicalite-1 are described in terms of silica templating by water clathrates.¶ Finally, the problem of finding minimal surface descriptions of crystal networks is addressed. Combinatoric methods are used to disprove the existence of possible embeddings of type I and II clathrate networks in non-self intersecting periodic minimal surfaces. The crystal network of the clathrate silicate, melanophlogite is successfully embedded in the WI-10 self-intersecting surface. Details of a previously unreported, genus-25 periodic surface with symmetry Im3m are discussed.

<p>The concept of the transfer Hamiltonian formalism has been reconsidered and generalized to include the non-orthogonality between the electron states in an interacting region, e.g. quantum dot (QD), and the states in the conduction bands in the attached contacts. The electron correlations in the QD are described by means of a diagram technique for Hubbard operator Green functions for non-equilibrium states. </p><p>It is shown that the non-orthogonality between the electrons states in the contacts and the QD is reflected in the anti-commutation relations for the field operators of the subsystems. The derived forumla for the current contains corrections from the overlap of the same order as the widely used conventional tunneling coefficients. </p><p>It is also shown that kinematic interactions between the QD states and the electrons in the contacts, renormalizes the QD energies in a spin-dependent fashion. The structure of the renormalization provides an opportunity to include a spin splitting of the QD levels by polarizing the conduction bands in the contacts and/or imposing different hybridizations between the states in the contacts and the QD for the two spin channels. This leads to a substantial amplification of the spin polarization in the current, suggesting applications in magnetic sensors and spin-filters.</p>

The concept of the transfer Hamiltonian formalism has been reconsidered and generalized to include the non-orthogonality between the electron states in an interacting region, e.g. quantum dot (QD), and the states in the conduction bands in the attached contacts. The electron correlations in the QD are described by means of a diagram technique for Hubbard operator Green functions for non-equilibrium states. It is shown that the non-orthogonality between the electrons states in the contacts and the QD is reflected in the anti-commutation relations for the field operators of the subsystems. The derived forumla for the current contains corrections from the overlap of the same order as the widely used conventional tunneling coefficients. It is also shown that kinematic interactions between the QD states and the electrons in the contacts, renormalizes the QD energies in a spin-dependent fashion. The structure of the renormalization provides an opportunity to include a spin splitting of the QD levels by polarizing the conduction bands in the contacts and/or imposing different hybridizations between the states in the contacts and the QD for the two spin channels. This leads to a substantial amplification of the spin polarization in the current, suggesting applications in magnetic sensors and spin-filters.

In this work, multi-band (multi-color) detector structures considering different semiconductor device concepts and architectures are presented. Results on detectors operating in ultraviolet-to-infrared regions (UV-to-IR) are discussed. Multi-band detectors are based on quantum dot (QD) structures; which include quantum-dots-in-a-well (DWELL), tunneling quantum dot infrared photodetectors (T-QDIPs), and bi-layer quantum dot infrared photodetectors (Bi-QDIPs); and homo-/heterojunction interfacial workfunction internal photoemission (HIWIP/HEIWIP) structures. QD-based detectors show multi-color characteristics in mid- and far-infrared (MIR/FIR) regions, where as HIWIP/HEIWIP detectors show responses in UV or near-infrared (NIR) regions, and MIR-to-FIR regions. In DWELL structures, InAs QDs are placed in an InGaAs/GaAs quantum well (QW) to introduce photon induced electronic transitions from energy states in the QD to that in QW, leading to multi-color response peaks. One of the DWELL detectors shows response peaks at ∼ 6.25, ∼ 10.5 and ∼ 23.3 µm. In T-QDIP structures, photoexcited carriers are selectively collected from InGaAs QDs through resonant tunneling, while the dark current is blocked using AlGaAs/InGaAsAlGaAs/ blocking barriers placed in the structure. A two-color T-QDIP with photoresponse peaks at 6 and 17 µm operating at room temperature and a 6 THz detector operating at 150 K are presented. Bi-QDIPs consist of two layers of InAs QDs with different QD sizes. The detector exhibits three distinct peaks at 5.6, 8.0, and 23.0 µm. A typical HIWIP/HEIWIP detector structure consists of a single (or series of) doped emitter(s) and undoped barrier(s), which are placed between two highly doped contact layers. The dual-band response arises from interband transitions of carriers in the undoped barrier and intraband transitions in the doped emitter. Two HIWIP detectors, p-GaAs/GaAs and p-Si/Si, showing interband responses with wavelength thresholds at 0.82 and 1.05 µm, and intraband responses with zero response thresholds at 70 and 32 µm, respectively, are presented. HEIWIP detectors based on n-GaN/AlGaN show an interband response in the UV region and intraband response in the 2-14 µm region. A GaN/AlGaN detector structure consisting of three electrical contacts for separate UV and IR active regions is proposed for simultaneous measurements of the two components of the photocurrent generated by UV and IR radiation.