<p>In the United States, buildings are responsible for almost 40% of the country’s total energy consumption and 38% of the total greenhouse gas emissions. Researchers are constantly seeking sustainable and efficient energy generation solutions for buildings as society continues to cope with the intensifying energy crisis and environmental deterioration. Thermoelectric technology is one such solution that potentially can lead to significant energy recovery and conversion between waste or excess thermal energy and electrical energy. One promising application is integrating thermoelectric materials into the building envelope (TBE) for power generation and building heating and cooling without transporting energy among subsystems and refrigerant use. TBE can combine structural support and thermal storage with power generation and thermal-activated cooling and heating, thereby contributing to sustainable living and energy. </p> <p>TBE technology is still in its early development stages. This dissertation aimed to develop a fundamental understanding of the characteristics, behaviors, operation, and control of TBE systems as energy-efficient measures for thermal energy harvesting and thermal comfort regulation and to address the significant research gaps concerning high-conversion efficiency materials and optimal module configuration as well as system deployment related to real-world applications. Accordingly, this dissertation focused on the following three key objectives: (1) development and characterization of new thermoelectric composite materials; (2) identification of optimal designs and controls of TBE and established mathematical models for performance simulation; and (3) quantification of the energy-saving benefits of TBE. </p> <p>The following five aspects specifically were investigated:</p> <p>(1)<em> Material development and characterization</em>. New thermoelectric cement composites were developed with cement and various additives, material concentrations, and fabrication methods in the laboratory. Their thermoelectric properties (e.g., Seebeck coefficient, thermal conductivity, electrical conductivity, power factor, and the figure of merit) were measured simultaneously and characterized at 300–350 K.</p> <p>(2)<em> Module evaluation.</em> Commercially available thermoelectric modules (TEMs) were assessed using well-designed test apparatus in both the heat pumping and power generation modes. The test results validated the numerical model, which assisted with performance comparison and material selection between cement-based and commercial TEMs for the TBE prototype.</p> <p>(3)<em> Prototype assessment. </em>A convective TBE prototype and a radiant TBE prototype were designed, assembled, and evaluated in a pair of controlled testing chambers. The TBE’s surface temperature, thermal capacity, and COP were assessed under summer and winter conditions. </p> <p>(4)<em> Prototype modeling. </em>The first-principle-based numerical models of both the convective and radiant TBE prototypes were developed in Modelica. The modeling results indicated good agreement with the experimental data. The verified models were used to study the impacts of the design parameters and operating conditions on the heat pumping performance of TBE.</p> <p>(5)<em> System simulation. </em>A TBE building system model was established by integrating the TBE prototype model within a building’s heat balance model, considering the building construction, climate condition, power control, etc. Its seasonal performance under various climate conditions was studied to identify the potential optimal operation and energy savings. </p> <p>This dissertation confirmed several key findings in the areas of material development, system design and operation, and energy savings. The TBE achieved higher efficiency with a heat pump for heating than for cooling generally. The TBE heating system performed better than a conventional electric heater (efficiency assumed at 0.9). The measures that improved TBE heating efficiency were enhancing the material’s thermoelectric properties, optimizing the geometry and number of TEMs, and improving the boundary heat transfer of TEMs. </p> <p>This dissertation concluded that the TBE system is a promising alternative to conventional heating systems in buildings. Furthermore, the knowledge gained will strengthen the understanding of thermoelectrics in the building domain and guide further development in TBE, as well as facilitate the operation of net-zero energy and carbon-neutral buildings. </p>

Der thermische Widerstand ist eine wichtige Kenngröße von Silicium-Germanium-Hetero-Bipolartransistoren (SiGe-HBTs). Bisher kam es bei der quantitativen Bestimmung der thermischen Widerstände von SiGe-HBTs zu deutlichen Abweichungen zwischen Simulation und Messung. Der Unterschied zwischen Simulation und Messung betrug bei den untersuchten HBTs mehr als 30 Prozent. Diese Arbeit widmet sich der Aufklärung und Beseitigung der möglichen Ursachen hierfür. Zu diesem Zweck werden als erstes die Messmethoden analysiert. Es zeigt sich, dass die bisher verwendete Extraktionsmethode sensitiv auf den Early-Effekt (Basisweitenmodulation) reagiert. Im Rahmen der Untersuchungen wurde ein neues Extraktionsverfahren entwickelt. Die neue Extraktions­methode ist unempfindlich gegenüber dem Early-Effekt. Mit Bauelemente­simulationen wird erstmalig die Wirkung des Seebeck-Effektes (Thermospannungen) auf die elektrisch extrahierten thermischen Widerstände demonstriert. Der Seebeck-Effekt bewirkt, dass die elektrisch extrahierten thermischen Widerstände der untersuchten HBTs nahezu 10 Prozent kleiner als die erwarteten Werte sind. Dieser Effekt wurde bisher nicht beachtet und wird hier erstmals nachgewiesen. Weiterhin wird die Abhängigkeit des thermischen Widerstandes vom Arbeitspunkt untersucht. Dabei hat sich gezeigt, dass bis zu einer Basis-Emitter-Spannung von 0,91 Volt die geometrische Form des Wärme abgebenden Gebietes unabhängig vom Arbeitspunkt ist. Anhand von Messungen wird gezeigt, dass die Dotierung die spezifische Wärmeleitfähigkeit von Silicium reduziert. Die Abnahme wird für Dotierungen größer als 1*1019 cm‑3 deutlich sichtbar. Ist die Dotierung größer als 1*1020 cm‑3, beträgt die Abnahme der spezifischen Wärmeleitfähigkeit mehr als 75 Prozent. Mithilfe einer Simulatorkalibrierung wird die spezifische Wärmeleitfähigkeit als Funktion der Dotierung bestimmt. Die erhaltene Funktion kann künftig beim thermischen Entwurf von HBTs verwendet werden. Somit können zukünftig genauere Vorhersagen zum thermischen Widerstand der HBTs gemacht werden. Dies ermöglicht zuverlässigere Aussagen darüber, wie Änderungen des Transistordesigns zur Minimierung des thermischen Widerstandes beitragen. / The thermal resistance is an important parameter of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). Until now, the quantitative determination of the thermal resistance showed significant differences between measurements and simulations. The difference between simulation and measurement of the investigated HBTs was more than 30 percent. This thesis devotes the clarification and elimination of potential sources for it. For this purpose, the measurement methods are analyzed at first. It is shown, that the currently used extraction method is sensitive to the Early effect (basewidth modulation). A now extraction method was developed, which is not sensitive to the Early effect. For the first time, the influence of the Seebeck effect (thermoelectric voltages) on the electrically extracted thermal resistance is shown by device simulations. The Seebeck effect leads to a 10 percent lower extracted thermal resistances compared to the expected values of the investigated HBTs. This effect was not taken into account up to now and is demonstrated here for the first time. Furthermore, the dependence of the thermal resistance on the operating point was investigated. The results show that the shape of the heat source is independent of the operating point if the base emitter voltage is smaller than 0.91 volt. The thermal conductivity of silicon is decreased by increasing doping concentrations. This is shown by measurements. The reduction of the thermal conductivity is well observable for doping concentrations higher than 1*1019 cm‑3. For doping concentration higher than 1*1020 cm‑3 the reduction amounts to more than 75 percent. The thermal conductivity was determined as a function of the doping concentration with the aid of a simulator calibration. This function can be used in the future thermal design of HBTs. It facilitates the optimization of the HBTs with respect to a minimal thermal resistance.

Increasing interest in an effciency enhancement of existing energy sources led to an extended research in the field of thermoelectrics. Especially skutterudites with their high power factor (electric conductivity times Seebeck coefficient squared) are suitable thermoelectric materials. However, a further improvement of their thermoelectric properties is necessary. The relatively high thermal conductivity can be decreased by introducing loosely bound guest ions, whereas atom substitution or nanostructuring (as thin films) could yield an increased power factor. The present work proves the feasibility to deposit single phase skutterudite thin films by MBE technique. In this regard CoSby and FeSby film series were deposited with three different methods: i) codeposition at elevated temperatures, ii) codeposition at room temperature followed by post-annealing, and iii) modulated elemental reactant method. The structural and thermoelectric properties of these films were investigated by taking the thermal stability of the film and the substrate properties into account. Compared to the stoichiometric Sb content of skutterudites of 75 at.%, a small excess of Sb is necessary for achieving single phase skutterudite films. It was found, that the deposited single phase CoSb3 films reveal bipolar conduction (and therefore a low Seebeck coefficient), whereas FeSb3 films show p-type conduction and very promising power factors at room temperature. The need of substrates with a low thermal conductivity and a suitable thermal expansion coefficient is also demonstrated. A high thermal conductivity influences the measurements of the Seebeck coefficient and the obtained values will be underestimated by thermal shortening of the film by the substrate. If the thermal expansion coefficient of film and substrate differ strongly from each other, crack formation at the film surface was observed. Furthermore, the realization of controlled doping by substitution as well as the incorporation of guest ions was successfully shown. Hence, this work is a good starting point for designing skutterudite based thin film structures. Two successful examples for such structures are given: i) a thickness series, where a strong decrease of the resistivity was observed for films with a thickness lower than 10nm, and ii) a FexCo1-xSb3 gradient film, for which the gradient was maintained even at an annealing temperature of 400°C.:Contents 1 Introduction 2 Nanostructured thermoelectric materials 2.1 Thermoelectric materials and ZT 2.2 Recent developments in improving ZT in thin films 3 Thermoelectric transport theory 3.1 Electronic transport coefficients 3.2 Lattice thermal conductivity 4 Skutterudites as promising thermoelectric material 4.1 CoSb3 4.1.1 Structural properties of skutterudites 4.1.2 Band structure of CoSb3 and density of states 4.1.3 Thermoelectric properties of CoSb3 4.1.4 Synthesis of CoSb3 thin films 4.2 FeSb3 4.2.1 Structural and thermoelectric properties of FeSb3 thin films 4.2.2 Synthesis of FeSb3 thin films 5 Experimental methods 5.1 Basic methods for structural characterization 5.2 Electric characterization: Resistivity and Hall measurements using van der Pauw geometry 5.3 Thermoelectric characterization (Seebeck coefficient) 5.4 Thermal characterization methods 6 Deposition of skutterudite thin films 6.1 Deposition chamber and deposition parameters 6.2 Deposition methods 6.3 Composition control of skutterudite films 7 Control of structural properties by the used deposition method 7.1 Structural properties of CoSb3 thin films 7.1.1 Crystallization characteristics of CoSb3 films 7.1.2 Comparison of films deposited with different deposition methods 7.1.3 Influence of different deposition parameters on the film properties 7.2 Structural properties of FeSb3 thin films 7.2.1 Crystallization behaviour 7.2.2 Structural properties of post-annealed Fe-Sb films prepared by codeposition 7.2.3 Influence of the heating rate on the film properties 8 CoSb3 and FeSb3 composition series 8.1 CoSby composition series 8.1.1 Films deposited at elevated temperatures 8.1.2 Annealed films 8.2 FeSby composition series 9 Influence of various substrates on the film properties 9.1 Substrate influence on the film morphology 9.2 Substrate influence on thermoelectric properties and measurements 10 FexCo1-xSb3 - controlled doping by substitution of Co with Fe 10.1 Properties of codeposited FexCo1-xSb3 films 10.2 Properties of FexCo1-xSb3 films deposited via MERM 11 Filled CoSb3 thin films 12 Examples for nanostructured thin film approaches 12.1 CoSb3 thickness series 12.2 FexCo1-xSb3 gradient films 13 Summary and Outlook

Diese Arbeit demonstriert die vollständige thermoelektrische Charakterisierung einzelner einkristalliner Bismuttellurid- und Silbernanodrähte und deren anschließende lokale strukturelle und chemische Charakterisierung mittels analytischer Transmissionselektronenmikroskopie. Die lokale strukturelle, chemische und morphologische Charakterisierung entlang der Nanodrähte trägt essentiell zum Verständnis des thermoelektrischen Transportes bei und bestätigt die Korrelation zwischen Oberflächen- und den thermoelektrischen Eigenschaften. Für durchmesservariierte Bismuttelluridnanodrähte wird der Einfluss der Morphologie auf die Wärmeleitfähigkeit bei Raumtemperatur quantifiziert. Im Vergleich zu einem glatten Referenznanodraht zeigt der durchmesservariierte Nanodraht gleicher Zusammensetzung und Kristallorientierung eine Reduktion der Wärmeleitfähigkeit um 55 %. Diese Reduktion kann durch Phononenrückstreuung an der eingekerbten Oberfläche erklärt werden. Die elektrische Leitfähigkeit und der Seebeckkoeffizient der Bismuttelluridnanodrähte deuten auf einen topologischen Oberflächenzustand hin. Für Silbernanodrähte werden die elektrische Leitfähigkeit und die Wärmeleitfähigkeit im Temperaturbereich von 1,4 K bis 300 K gemessen. Mit fallender Temperatur steigt die relative Reduktion der Wärmeleitfähigkeit im Verhältnis zur elektrischen Leitfähigkeit stärker, sodass die Lorenzzahl die klassische Wiedemann-Franz-Relation nicht erfüllt und eine Funktion der Temperatur darstellt. Der Temperaturverlauf der Lorenzzahl der Silbernanodrähte entspricht der 1938 von Makinson aufgestellten Theorie für hochreine Metalle und ist im Tieftemperaturbereich um bis zu zwei Größenordnungen zum Sommerfeldwert reduziert. / This work demonstrates the full thermoelectric characterisation of individual single crystalline bismuth telluride and silver nanowires and their subsequent local structural and chemical characterisation via analytical transmission electron microscopy along the whole nanowires. Therefore, the correlation between the structure, in particular the surface morphology, and the thermoelectric transport properties is unambiguously shown. For diameter varied bismuth telluride nanowires the influence of the morphology on the thermal conductivity is quantified at room temperature. The diameter varied nanowire shows a reduction of 55 % with respect to the smooth nanowire of the same chemical composition and structural orientation. This reduction can be explained by phonon backscattering at the indents. The electrical conductivity and the Seebeck coefficient indicate the presence of a topological surface state. For silver nanowires the electrical and thermal conductivity are determined in the temperature range between 1.4 K and 300 K. With decreasing temperature the relative reduction of the thermal conductivity is higher than the reduction of the electrical conductivity resulting in a temperature-dependent Lorenz number, so that the classical Wiedemann-Franz relation is not fulfilled. The temperature characteristic of the silver nanowires'' Lorenz number is in agreement with the theory Makinson established for highly pure metals in 1938 and is reduced by two orders of magnitude with respect to the Sommerfeld value in the low temperature regime.

Waste heat recovery is a multi-billion-dollar industry with a compound annual growth rate of 8.8% assessed between 2016 to 2024 and low-grade waste heat (< 230^oC ± 20^oC) makes up 66% of this ubiquitous resource. Thermoelectric generators are preferred for the recovery process because they are cheap and are well suited for this temperature range. They generate power by converting thermal potential to electric potential, known as the Seebeck effect. Since they have no moving parts, they are inherently immune to mechanical failure or an intermittent need for maintenance. However, the challenge has been to effectively harvest waste heat with these modules to generate power, using passive processes. This work is focused on designing a device for optimized harvesting of waste energy from the ambient with a custom, evaporatively-cooled heat sink. This heat sink is designed to passively handle the cooling of the other side of the thermoelectric module so as to enable the attainment of a minimum of 5V, which is the minimum voltage required to power small mobile devices. The heat sink model is similar to a loop heat pipe but engineered for compactness. To ensure this level of efficacy is attained, several studies are made to optimize the wick. Non-metal wicks were considered as they do not contribute to an increase in temperature of the compensation chamber in loop heat pipes. A non-metal wick integrated with nanoparticles is tested and results show a clear thermal management enhancement over similar but virgin non-metal wicks, at over 16%. The heat source section of the device is optimized for energy-harvesting in low grade temperature regimes by incorporating a near-black body coating on the metal heat source section. Experimental results show that both the heat source and sink sections were able to induce sufficient thermal potential for the thermoelectric modules to passively generate up to 5V using eight 40mm by 40mm Bismuth Telluride modules in 3.5 minutes. The prototype is relatively cheap, inherently reliable and presents the possibility of passively harvesting low-grade waste heat for later use, including powering small electronic devices.

Mise au point d'un appareillage permettant des études in situ de réactions solide-gaz dans une large gamme de températures; étude de différentes phases du système SrFeO3-y(y = 0,5-1) en fonction de la température et de la pression partielle d' oxygène; étude des composes du système SnF2 - SnF4 et établissement d' une corrélation entre les paramètres Mössbauer et les propriétés structurales.

The growing need of energy worldwide has lead to an increasing demand for alternative sources of power generation. Thermoelectric materials are one of the ‘green energy sources’ which convert directly heat into electricity, and vice–versa. The efficiency of this conversion is dependent on ‘figure of merit’ (z T), which depends on the material’s Seebeck coefficient (S), electrical resistivity (ρ) and thermal conductivity (κ) through the relation z T=S2T/ρκ, where T is the temperature. High values of z T lead to high efficiency, and therefore, z T must be maximized. Lead telluride is well–established thermoelectric material in the temperature range 350 K and 850 K. The aim of this thesis is to improve the z T of the material by adopting two different approaches – (i) doping/alloying and (ii) introducing additional interfaces in bulk i.e. having two phase PbTe. In this thesis, first an introduction about the thermoelectric phenomenon is given, along with the material parameters on which z T depends. A survey of literature associated with PbTe is done and the current status of thermoelectric devices is summarized briefly. This is followed by a description of the synthesis procedure and the measurement techniques adopted in this work. The first approach is the conventional alloying and doping of the material by which carrier concentration of the material is controlled so that maximum power factor Sρ2 is achieved and a simultaneous reduction of thermal conductivity takes place by mass fluctuation scattering. Under this, two systems have been studied. The first system is PbTe1−ySey alloys doped with In (nominal composition: Pb0.999In0.001Te1−ySey, y=0.01, 0.05, 0.10, 0.20, 0.25, 0.30). The compounds were single phase and polycrystalline. Lattice constants obtained from Rietveld refinement of X–ray diffraction (XRD) data showed that Vegard’s law was followed, indicating solid solution formation between PbTe and PbSe. Compositional analysis showed lower indium content than the nominal composition. Temperature dependent Seebeck coefficient showed all the samples to be n–type while Pisarenko plots showed that indium did not act as a resonant dopant. Electrical resistivity increased with temperature, while mobility vs T fitting showed a mixed scattering mechanism of acoustic phonon and ionized impurity scattering. Thermal conductivity followed a T1 dependence, which indicated acoustic phonon scattering. At high temperature, slight bipolar effect was observed, which showed the importance of control-ling carrier concentration for good thermoelectric properties. A z T of 0.66 was achieved at 800 K. The second alloy studied under this approach was Mn doped Pb1−ySnyTe alloy (nominal composition Pb0.96−yMn0.04SnyTe (y=0.56, 0.64, 0.72, 0.80)). All the samples followed Vegard’s law, showing formation of complete solid solution between PbTe and SnTe. Microstructure analysis showed grain size distribution of <1 µm to more than 10 µm. Seebeck coefficient showed all samples were p-type and the role of two valence band conduction in p–type PbTe based materials. Electrical resistivity showed a de-crease possibly due to (i) large carrier concentration or (ii) increased mobility due to Mn2+ ions. Thermal conductivity decreased systematically with decreasing Sn content. Bipolar effect was observed at high temperatures. Accordingly, the highest z T of 0.82 at 720 K was obtained for the sample with Sn (y=0.56) content due to optimum carrier concentration and maximum disorder. The second approach of having additional interfaces in bulk focuses on reducing thermal conductivity by scattering phonons. Under this approach, three systems were studied. The first system is PbTe with bismuth (Bi) secondary phase. The XRD and Ra-man studies showed that bismuth was not a dopant in PbTe, while micrographs showed micrometer–sized Bi secondary phase dispersed in bulk of PbTe. Reduction in Seebeck coefficient showed possible hole donation across PbTe–Bi interfaces, while electrical re-sistivity and thermal conductivity showed that the role of electrons at the interfaces was more important than phonons for the present bismuth concentrations. For the parent PbTe, z T of 0.8 at 725 K was reached, which, however decreased for bismuth added samples. The second system studied under the two phase approach was indium (In) added PbTe. Indium was not found to act as dopant in PbTe, while micrometer sized indium phase was found in PbTe bulk. A decrease in the electronic thermal conductivity ac-companied by a simultaneous increase of the electrical resistivity and Seebeck coefficient throughout the measurement range indicated increased scattering of electrons at PbTe-In interfaces. Higher values of the lattice thermal conductivity showed that the PbTe–In interfaces were ineffective at scattering phonons, which was initially expected due to the lattice mismatch between PbTe and In. For PbTe with 3 at. % In phase, z T value of 0.78 at 723 K was achieved. Under the two phase approach, as a comparative study, PbTe with both micrometer sized Bi and In phases together was prepared, in which no improvement in z T was found. A comparison of both the approaches showed that the alloying approach is better than the two–phase approach. This is because micrometer sized secondary phase scatter the electrons more than the phonons, leading to adverse effect on the transport coef-ficients, and hence, on z T. Alloying, on the other hand, is more beneficial in reducing thermal conductivity by mass fluctuation scattering, along with a simultaneous reduction of electrical resistivity.

This master´s thesis is directed to an research of thermoelectric cells as power sources. It is discoursing about general properities of thermoelectric cells and their using at practical aplications in the first part. Then a heating and cooling system is designed and made for a selected type of thermoelectric cell which represents the emergency back-up power source. In the next part a DC/DC step-up converter is designed for a selected type of thermoelectric cell. This converter generates the DC load voltage 12V. The converter is controlled by PWM with a carrier frequency 50kHz.

In the last decade there is a rising interest in thermoelectric applications. Thermoelectric generators enabling the direct conversion of the heat into the electricity become attractive. This fact is caused by the demands of environmental operation and saving primary resources. Scientists intensively investigate and develop new materials and structures suitable for these applications. The efficiency of the thermoelectric conversion progressively increases. Unfortunately we have no available materials with sufficient thermoelectric properties which could provide cost-competitive price. Thermoelectric generators seem to be useable devices. For example, in case of the unused waste heat using of the thermoelectric generator can increase the overall effectiveness of the unit despite the low efficiency of the generator. This master thesis deals with the issue of the Peltier modules representing the main part of the thermoelectric generators. The physical principles and structures of the thermoelectric modules and the possibility of thermoelectric power production are described here. In the practical part of this thesis the design of the low power generator utilizing waste heat from biomass boiler Verner A 251.1 is proposed.

Die thermoelektrische Energiekonversion auf der Basis des Seebeck-Effekts ist eine Methode zur direkten Erzeugung elektrischer Energie aus thermischer Energie. Für die wesentlichen anwendungsrelevanten Parameter Temperaturbereich, elektrische Leistung und Herstellungskosten sind Materialauswahl und Aufbau der TEG entscheidend. In der vorliegenden Arbeit wurden erstmalig thermoelektrische Oxidkeramiken in monolithischen TEG verwendet, die auf der Grundlage des transversalen thermoelektrischen Effekts arbeiten. Die TEG wurden mit industriell skalierbaren Keramiktechnologien hergestellt, untersucht und hinsichtlich ihrer Parameter detailliert theoretisch und experimentell bewertet. Als Modellsystem für die Materialien wurde La1-xSrxCuO4 in Kombination mit Ag bzw. Ag6Pd1 verwendet. Es konnte belegt werden, dass diese monolithischen TEG im Bereich kleiner elektrischer Leistungen eine vorteilhafte Alternative zu herkömmlichen longitudinalen thermoelektrischen Generatoren sein können.