Siebgedruckte piezokeramische Dickschichten eignen sich für Sensoren, Aktoren oder Ultraschallwandler. Zur Auslegung von Dickschicht-Aktoren werden grundlegende Kenntnisse über die elektromechanischen Eigenschaften benötigt. Diese Arbeit beschreibt die elektromechanischen Eigenschaften piezokeramischer Dickschichten unter Klein- und Großsignalbedingungen. Durch gezielte Variationen der Biegerlänge und Materialien werden Einflüsse auf die Gefügeentwicklung, das Arbeitsvermögen und weitere elektromechanische Kennwerte beschrieben und optimale Herstellungsparameter identifiziert. Interdigitalelektroden (IDE) ermöglichen die Polarisation und Ansteuerung der piezokeramischen Schicht in der Ebene (in-plane). Aufgrund des d 33 -Effektes kommt es zur Dehnung in der Ebene, woraus eine Verdopplung der Biegung in entgegengesetzter Richtung zu through-thickness-Aktoren resultiert. In der Arbeit wird das Arbeitsvermögen siebgedruckter in-plane-Biegeaktoren in Abhängigkeit vom Substratmaterial, von der Biegerlänge und vom piezokeramischen Material beschrieben und diskutiert. An zwei Mikropositioniersystemen wird die Eignung piezokeramischer Dickschichtaktoren für adaptive optische Systeme gezeigt.

L’objectif fondamental de cette étude est de montrer la faisabilité de l’élaboration des couches épaisses de zircone non dopée, en contrôlant la microstructure et l’état mécanique, par MOCVD et par Sol-Gel. Dans un premier temps, nous avons essayé d’optimiser les conditions de dépôt de MOCVD, en faisant varier ou en jouant sur les différents paramètres du procédé, conduisant à l’obtention des couches de ZrO2 micrométriques et denses. La stabilité de la phase quadratique de la zircone est conditionnée par la pression partielle en oxygène, la température du substrat ainsi que l’épaisseur du dépôt. La texture cristallographique de type {100} est obtenue pour les dépôts réalisés à une température de substrat T ≤ 850°C et pour de faibles pressions totales. Concernant l’état mécanique des couches de zircone, l’augmentation de l’épaisseur de la couche peut relaxer les contraintes résiduelles de tension au sein du dépôt. Ce phénomène s’accentue au-delà d’une épaisseur critique suite à la création des espacements entre les colonnes de croissance de la couche. Parallèllement, nous avons montré que la qualité des dépôts Sol-Gel est maitrisée par le choix du substrat, l’utilisation de « sols » vieillis, la multiplication du nombre de couches « spin-coating », le mode de dépôt ainsi que la température de recuit. Certaines propriétés caractéristiques du dépôt telles que la cristallisation, la composition de phase et l’adhérence sont aisément contrôlées respectivement par l’âge du sol, la température de recuit et le coefficient de dilatation thermique associé au substrat utilisé. La microstructure (changement de phases, taille des cristallites, texture cristallographique) et les contraintes internes (thermiques et intrinsèques) ont été caractérisées. Le Sol-Gel présente l’avantage de proposer des couches de zircone très peu contraintes par rapport aux films obtenus par le procédé MOCVD. Quel que soit le procédé de dépôt, MOCVD et/ou Sol-Gel, l’élaboration des films de ZrO2 orientés demeure fonction de la température du traitement. La tentative d’élaborer des multicouches de zircone par un couplage MOCVD/Sol-Gel montre la possibilité de sélectionner des paramètres de dépôt propices à la fabrication d’un film présentant un état microstructural et mécanique contrôlé et voulu. / The fundamental purpose of this study is to demonstrate the feasibility to obtain an undoped zirconia thick film, by controlling the microstructure and mechanical state, using MOCVD and Sol-Gel technique. Firstly, we try to optimize the MOCVD deposition conditions, by varying the different process parameters, leading to the production of ZrO2 micrometric and dense films. The stability of the tetragonal zirconia phase depends on the oxygen partial pressure, the substrate temperature and the film thickness. The crystallographic texture of {100} type is obtained for the deposits obtained under a substrate temperature T ≤ 850°C and a low total pressure. Concerning mechanical state of the zirconia films, the thickness increasing can relax the tensile residual stress within the deposit. This phenomenon accents beyond a critical thickness due to the creation of columns spaces during film growth. In the second part, we show that the quality of the Sol-Gel deposition is controlled by substrate origin, use of aged sol, increase of “spin-coating” layers number, deposition mode and annealing temperature. Some deposit characteristics such as crystallization, phase composition and film adhesion are easily controlled by sol aging, annealing temperature and thermal expansion coefficient associated to the used substrate, respectively. The microstructure (phase change, crystalline size, crystallographic texture) and the internal stresses (thermal and residual) were characterized. The Sol-Gel technique has the advantage of providing zirconia films with low stress level compared to the films obtained by MOCVD. Regardless of the deposition process, MOCVD and / or Sol-Gel, the development of ZrO2 oriented films is in function of the treatment temperature. The attempt to get multilayer zirconia by coupling MOCVD/Sol-Gel methods shows the possibility to choose the deposition parameters in order to produce films with controlled and wanted microstructure and mechanical state.

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L’amélioration des systèmes électroniques pour le déploiement de l'avion tout électrique dépend de la capacité des composants passifs, tels que les condensateurs, à réduire leur volume, leur masse et leur coût, et augmenter leurs performances et leur fiabilité, particulièrement dans l’environnement aéronautique. Dans ce contexte, cette thèse a eu pour objectif l’étude et le développement de nouvelles technologies de condensateurs pour des applications avioniques. Dans la première partie des travaux, nous abordons l’évaluation de condensateurs céramique de puissance. La technologie céramique constitue, en effet, l’une des rares solutions matures capables de répondre aux exigences des équipementiers. La caractérisation, l’analyse des mécanismes de défaillance, de leurs effets et de leur criticité (AMDEC) ainsi que l’étude de fiabilité et de robustesse de composants commerciaux présentant des architectures originales (condensateurs multi-chips) ont été réalisées. Ces résultats ont été complétés par une étude plus amont sur la caractérisation de céramiques frittées par frittage flash (SPS). Les permittivités colossales de ces matériaux permettraient d’accroitre la fiabilité et la miniaturisation des condensateurs tout en conservant de fortes valeurs de capacité et de tension nominale. La seconde partie, plus fondamentale, a été consacrée au développement de nanoparticules céramique/polymère coeur-écorce pour des applications de condensateurs enterrés, opérant aux radiofréquences. La synthèse et les caractérisations physico-chimiques des nanocomposites ainsi que les procédés de fabrication de condensateurs en couches épaisses sont, en premier lieu, décrits. Une méthode de caractérisation électrique large bande a été mise au point pour permettre l’analyse des propriétés diélectriques et des mécanismes de conduction des nanoparticules. Les performances des dispositifs ont été recherchées en fonction de la température et des procédés de mise en forme. En outre, la durabilité en température de ces derniers a été évaluée. / The improvement of electronic systems for the deployment of all-electric aircrafts depends on the ability of passive components, such as capacitors, to reduce their volume, weight and cost, and to increase their performance and reliability, particularly in the aeronautical environment. In this context, the objective of this thesis was to study and develop novel capacitor technologies for avionics. In the first part of this work, the evaluation of power ceramic capacitors has been discussed. Indeed, the ceramic technology appeared to be one of the few mature solutions meeting the requirements of OEMs. The characterization, the failure mode, effects and criticality analysis (FMECA) and reliability and robustness assessment of commercial components using original architectures (multi-chip capacitors) have been performed. These results have been completed by a more advanced study on the characterization of new ceramics sintered by spark plasma sintering (SPS). The colossal permittivity of these materials could allow to increase reliability and miniaturization of capacitors while maintaining high values of capacitance and voltage rating. The second part, more fundamental, is devoted to the development of core-shell ceramic/polymer nanoparticles for embedded capacitors operating at radiofrequencies. The synthesis and the physicochemical characterization of the nanocomposites as well as the manufacturing processes of the thick film capacitors are first described. A new broadband electrical characterization methodology has been developed to analyze the dielectric properties and the conduction mechanisms of the nanoparticles. The effects of the temperature and the manufacturing process on the device performance have been investigated. In addition, the durability was evaluated.

In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization.

In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due to their application as photoconductor materials in the new fully digital direct conversion flat panel x-ray medical image detectors. For a number of reasons, the a-Se photoconductor layer in such x-ray detectors has to be operated at very high electric fields (up to 10 Volts per micron) and one of the most difficult problems related to such applications of a Se is the problem of the dark current (the current in the absence of any radiation) minimization in the photoconductor layer. <p>This PhD work has been devoted to researching the possibilities for dark current minimization in a-Se x-ray photoconductors devices through a systematic study of the charge transport (carrier mobility and carrier lifetimes) and dark currents in single and multilayered a-Se devices as a function of alloying, doping, deposition condition and other fabrication factors. The results of the studies are extensively discussed in the thesis. We have proposed a new technological method for dark current reduction in single and multilayered a-Se based photoconductor for x-ray detector applications. The new technology is based on original experimental findings which demonstrate that both hole transport and the dark currents in a-Se films are a very strong function of the substrate temperature (Tsubstrate) during the film deposition process. We have shown that the new technique reduces the dark currents to approximately the same levels as achievable with the previously existing methods for dark current reduction. However, the new method is simpler to implement, and offers some potential advantages, especially in cases when a very high image resolution (20 cycles/mm) and/or fast pixel readout (more than 30 times per second) are needed. <p>Using the new technology we have fabricated simple single and double (ni-like) photoconductor layers on prototype x-ray image detectors with CCD (Charge Coupled Device) readout circuits. Dark currents in the a-Se photoconductor layer were not a problem for detector operation at all tested electric fields. Compared to the currently available commercial systems for mammography, the prototype detectors have demonstrated an excellent imaging performance, in particular superior spatial resolution (20 cycles/mm). Thus, the newly proposed technology for dark current reduction has shown a potential for commercialization.