The explosive growth of the wireless market has increased the demand for low-cost, highly-integrated CMOS wireless transceivers. However, the implementation of CMOS RF power amplifiers remains a formidable challenge. The objective of this research is to demonstrate the feasibility of CMOS RF power amplifiers by compensating for the RF performance disadvantages of CMOS technology. This dissertation proposes a parallel-combining transformer (PCT) as an impedance-matching and output-combining network. The results of a comprehensive analysis show that the PCT is a suitable solution for watt-level output power generation in cellular applications. To achieve high output power and high efficiency, the work presented here entailed the design of a class-E switching power amplifier in a 0.18-μm CMOS technology for GSM applications and, with the suggested power amplifier design technique, successfully demonstrated a fully-integrated RF front-end consisting of a power amplifier and an antenna switch. This dissertation also proposed an efficiency enhancement technique at power back-off. In an effort to save current in the power back-off while satisfying the EVM requirements, a class-AB linear power amplifier was implemented in a 0.18-μm CMOS technology for WLAN and WiMAX applications using a PCT as well as an operation class shift between class-A and class-B. Thus, the research in this dissertation provides low-cost CMOS RF power amplifier solutions for commercial products used in mobile wireless communications.

The objective of this research is to analyze and improve linearity of envelope elimination and restoration (EER) radio frequency (RF) power amplifiers. Envelope elimination and restoration was compared to other efficiency enhancement techniques and determined to likely be the most suitable solution for implementation of multimode, multiband portable RF transmitters. Distortion, stemming from dynamic power-supply modulation of RF transistors in EER RF power amplifiers was identified as one of the key challenges to the development of commercially viable EER transmitters. This dissertation presents a study of phase distortion in RF power amplifiers (PAs) with emphasis on identification of the origins of phase distortion in EER RF power amplifiers. Circuit-level techniques for distortion mitigation are also presented. Memory effects in conventional power amplifiers are investigated through the accurate measurement and analysis of phase asymmetry of out-of-band distortion components. Novel physically-based power amplifier model is developed for attributing measured memory effects to their physical origin. The amount of linearity correction, obtained through pre-distortion for a particular RF power amplifier, is then correlated to the behavior of the memory effects in the corresponding PA. Heterojunction field-effect transistor and heterojunction bipolar transistor amplifiers are used for investigation of voltage-dependent phase distortion in handset EER RF PAs. The distortion is found to stem from vector addition of signals, generated in nonlinear circuit elements of the PA. Specifically, nonlinear base-collector capacitance and downconversion of distortion components from second harmonic frequency are found to be the dominant sources of phase distortion. Shorting of second harmonic is proposed as a way to reduce the distortion contribution of the downconverted signal. Phase distortion is reduced by 50%, however a slight degradation in the amplitude distortion is observed. Push-pull architecture is proposed for EER RF power amplifiers to cancel distortion components, generated in the nonlinear base-collector capacitance. Push-pull implementation enables a 67% reduction in phase distortion, accompanied by a 1-2 dB reduction in amplitude distortion in EER RF power amplifiers. This work, combined with other studies in the field, will help advance the development of multimode, multiband portable RF transmitters, based on the envelope elimination and restoration architecture.

<p>In this Master's thesis, a direct-conversion receiver front-end has been designed in a 0.18um CMOS technology. </p><p>Direct-conversion receivers (DCR) have obvious advantages over the heterodyne counterpart. Since the intermediate frequency (IF) is zero, the problem of image is circumvented. As a result, no front-end image reject filter is required and the channel selection requires only a low-pass filter, which makes it easy to integrate directly on chip. However, the DCR also suffers from several drawbacks such as extreme sensitivity to DC offsets, 1/f noise, local oscillator (LO) leakage/radiation, front-end nonlinearity and I/Q mismatch. This implies very high demands on the DCR front-end. </p><p>The front-end comprises a low-noise amplifier (LNA) and a mixer. Different LNA and mixer architectures has been studied and from the mentioned inherited problems with direct conversion, one proposal for a solution is a differential source degenerated LNA and a differential harmonic mixer, which has been designed and simulated. </p><p>The LNA has a gain of 12dB, a noise figure of 3.6dB and provides a return loss better than -15dB. The overall noise figure of the signal path is 8dB and the overall IIP3 and IIP2 is -12dBm and 31dBm, respectively.</p>

In this thesis, the circuits which comprise the front-end of a millimeter-wave transmit-receive module are investigated using a state-of-the-art 90 nm SiGe BiCMOS process for use in radar remote sensing applications. In Chapter I, the motivation for a millimeter-wave radar in the context of space-based remote sensing is discussed. In addition, an overview of Silicon-germanium technology is presented, and the chapter concludes with a discussion of design challenges at millimeter-wave frequencies. In Chapter II, a brief history of radar technology is presented - the motivations leading to the development of the transmit-receive module for active electronically scanned arrays are discussed, and the critical components which reside in nearly every high-frequency transmit-receive module are introduced. In Chapter III, the design and results of a W-band single-pole, double-throw switch using SiGe p-i-n diodes are discussed. In particular, the design topology and methods used to achieve low-loss and high power handling over a wide matching bandwidth without sacrificing isolation are described. In Chapter IV, the design and results of a W-band low-noise amplifier using SiGe HBT's are discussed. The design methodologies used to achieve high gain and exceptional noise performance over a wide matching bandwidth are described. Concluding remarks and a discussion of future work are in Chapter V.

This thesis presented the research, design and fabrication associated with a unique application of rectenna technology combined with lock-in amplification. An extremely low-power harmonic transponder is conjoined with an interrogator base-station, and utilizing coherent demodulation the Remote Lock-In Amplifier (RLIA) concept is realized. Utilizing harmonic re-radiation with very low-power input, the 1st generation transponder detects a transmitted interrogation signal and responds by retransmitting the second harmonic of the signal. The 1st generation transponder performs this task while using no additional power besides that which accompanies the wireless signal. Demonstration of the first complete configuration provided proof of concept for the RLIA and feasibility of processing relevant information under "zero" power operating conditions with a remote transponder. Design and fabrication of a new transponder where the existing zero-bias transponder was modified to include a DC bias to the diode-based frequency doubler is presented. Applied bias voltage directly changed the impedance match between the receiving 1.3 GHz antenna and the diode causing a change in conversion loss. Testing demonstrated that a change in conversion loss induces an amplitude modulation on the retransmission of the signal from the transponder. A test of bias sweep at the optimal operating frequency was performed on the 2nd generation transponder and it was seen that a change of ~ 0.1 V in either a positive or negative bias configuration induced an approximate 15 dB change in transponder output power. A diode-integrated radar detector is designed to sense microwaves occurring at a certain frequency within its local environment and transform the microwave energy to a DC voltage proportional the strength of the signal impinging on its receiving antenna. The output of the radar detector could then be redirected to the bias input of the 2nd generation transponder, where this DC voltage input would cause a change in conversion loss and modulate the retransmitted interrogation signal from the transponder to the base station. When the base station receives the modulated interrogation signal the information sensed by the radar detector is extracted. Simulations and testing results of the fabricated radar detector demonstrate capability of sensing a signal of approximately -53.3 dBm, and accordingly producing a rectified DC voltage output of 0.05 mV. A comparison is made between these findings and the transponder measurements to demonstrate feasibility of pairing the radar detector and the 2nd generation transponder together at the remote sensor node to perform modulation of interrogation signals.

While data converters have been around for nearly nighty years, mm-wave data converters are still in their infancy. Only recently the 40-GHz sampling barrier was broken with the introduction of the next generation high-speed sampling oscilloscopes. Meanwhile, data communication is the main driving force behind mm-wave data converter development. As with any mm-wave circuit, designers must go beyond simply relying on technology advancement to archives acceptable performance. Careful device and passive modeling is critical and systematic design methodology may o er repeatable and scalable mm-wave designs. In this thesis the design methodology and architectural challenges of mm-wave ADCs are explored. Some of the fundamental mm-wave ADC building blocks such as track and hold ampli ers, data distribution networks and ip- ops are implemented in SiGe BiCMOS and CMOS technologies and characterized. Several record breaking circuits are presented along with systematic design methodology. The impact of these circuit blocks on the performance of the next generation ADCs is studied and experimentally veri ed using a 35-GS/s, 4-bit ADC-DAC chain implemented in a SiGe BiCMOS technology.

While data converters have been around for nearly nighty years, mm-wave data converters are still in their infancy. Only recently the 40-GHz sampling barrier was broken with the introduction of the next generation high-speed sampling oscilloscopes. Meanwhile, data communication is the main driving force behind mm-wave data converter development. As with any mm-wave circuit, designers must go beyond simply relying on technology advancement to archives acceptable performance. Careful device and passive modeling is critical and systematic design methodology may o er repeatable and scalable mm-wave designs. In this thesis the design methodology and architectural challenges of mm-wave ADCs are explored. Some of the fundamental mm-wave ADC building blocks such as track and hold ampli ers, data distribution networks and ip- ops are implemented in SiGe BiCMOS and CMOS technologies and characterized. Several record breaking circuits are presented along with systematic design methodology. The impact of these circuit blocks on the performance of the next generation ADCs is studied and experimentally veri ed using a 35-GS/s, 4-bit ADC-DAC chain implemented in a SiGe BiCMOS technology.

The PhD dissertation is organized in two parts. In the first part, we present an experimental study of stimulated Raman scattering in a silicon-on-insulator (SOI) nanowire. We demonstrate that the Raman amplification of a narrow-band Stokes wave experiences a saturation effect for high pump intensities because of self phase modulation of the pump beam. Moreover, an analytical model is presented that describes the experimental results remarkably well. The model furthermore provides an estimation of the Raman gain coefficient γR of silicon. The second part is devoted to the experimental study of stimulated Raman scattering in a doubly resonant planar GaAs microcavity. The nonlinear measurements clearly show some totally unexpected results. We experimentally demonstrate that the relaxation of the electrons in the conduction band of GaAs is significantly modified through the interaction with coherently excited Raman phonons.

Die vorliegende Arbeit ist der analytischen Untersuchung und Weiterentwicklung von Methoden und Schaltungen zur Einstellung der Signalphase und -amplitude gewidmet. Hierbei wird zum Ziel gesetzt, die Leistungsfähigkeit dieser Schaltungen als analoge Hochfrequenz-Baugruppen in Empfangs- und Sendeschaltkreisen mit einem vergleichbaren oder geringerem schaltungstechnischen Aufwand und Strombedarf zu verbessern und dies anhand von Implementierungsbeispielen zu bestätigen. Die Dämpfungsglied-Topologien , T, überbrücktes T und X werden modelliert und hinsichtlich der Phasenbeeinflussung analysiert, sodass eine Bewertung ihrer Eignung durchgeführt werden kann. Weiterhin wird ein innovativer Ansatz zur Linearisierung der Steuerkennlinie vorgestellt und mit Hilfe einer Beispielschaltung mit einem Phasenfehler von 3 ° und einem Steuerlinearitätsfehler von 0,35 dB innerhalb der 1 dB Grenzfrequenz und einem Steuerbereich von 20 dB nachgewiesen. Die Arbeit bietet darüber hinaus eine analytische Betrachtung zu aktiven steuerbaren Verstärkern, welche die besondere Eignung der Gilbert-Zelle aufzeigt und eine geeignete Ansteuerschaltung ableitet. Am Beispiel nach diesem Prinzip entworfener Schaltkreise werden Phasenfehler von nur 0,4 ° innerhalb eines besonders hohen Stellbereichs von 36 dB demonstriert, wodurch eine Vergrößerung des Stellbereichs um den Faktor 4 und eine Verbesserung des Phasenfehlers um den Faktor 2 im Vergleich zum Stand der Technik erreicht wurde. Es wird der Zirkulator-Phasenschieber maßgeblich durch eine neuartige geeignete Ansteuerung verbessert. Damit werden die sonst für die Amplitudenbeeinflussung im Wesentlichen verantwortlichen Varaktoren überflüssig, ohne dabei den schaltungstechnischen Aufwand zu erhöhen. Eine Messung der entsprechenden Schaltung bestätigt dies mit einem Amplitudenfehler von nur 0,9 dB für einen Phasenstellbereich von 360 °, was einer Verringerung des Fehlers um den Faktor 3 im Vergleich zu herkömmlichen Zirkulator-Phasenschiebern entspricht. Abschließend wird der Funktionsnachweis mehrerer entworfener Vektor-Modulatoren mit einer effektiven Genauigkeit von bis zu 6 bit in Einzelschaltungen, Hybridaufbauten und schließlich im Rahmen eines vollständig integrierten Empfängerschaltkreises erbracht. Dieser erzielt eine Verdopplung der Reichweite bei einer um nur 35% höheren Leistungsaufnahme gegenüber einem herkömmlichen Kommunikationsverfahren (SISO). / The present work is dedicated to the investigation and enhancement of amplitude and phase control methods and circuits. The aim is to enhance the performance of these circuits in modern radio frequency transceivers with a comparable or even lower effort and power consumption. A prove of concept will be delivered with implementation examples. By means of models of the passive attenuator topologies , T, bridged-T and X, a thorough analysis is performed in order to compare them regarding their impact on the signal phase. Additionally, a novel approach to increase the control linearity of the attenuators is proposed and verified by measurements, showing a phase error of 3 ° and a control linearity error of 0,35 dB at the 1 dB corner frequency, successfully. The work also presents an investigation on variable gain amplifiers and reveals the superior performance of the Gilbert cell with respect to low phase variations. A cascode biasing circuit that supports these properties is proposed. Measurements prove this concept with relative phase errors of 0,4 ° over a wide attenuation control range of 36 dB thus cutting the error by half in a four times wider control range. The circulator based phase shifting approach is chosen and improved significantly by means of tuning the transconductor instead of the varactors thus removing their impact on signal amplitude. The approach is supported by measurements yielding an amplitude error of only 0,9 dB within a phase control range of 360 ° which corresponds to an improvement by a factor of three compared to recent circulator phase shifters. Finally, the design of several vector modulator topologies is shown with hardware examples of single chips, hybrid printed circuit boards and highly integrated system level ICs demonstrating a full receiver. By using improved variable gain amplifiers, an effective vector modulator resolution of 6 bit without calibration is achieved. Furthermore, a multiple-input multiple-output system is demonstrated that doubles the coverage range of common SISO systems with only 35% of additional power consumption.

With more and more integration of analog and RF circuits in scaled CMOS technologies, process variation is playing a critical role which makes it difficult to achieve all the performance specifications across all the process corners. Moreover, at scaled technology nodes, due to lower voltage and current handling capabilities of the devices, they suffer from reliability issues that reduce the overall lifetime of the system. Finally, traditional static style of designing analog and RF circuits does not result in optimal performance of the system. A new design paradigm is emerging toward digitally assisted analog and RF circuits and systems aiming to leverage digital correction and calibration techniques to detect and compensate for the manufacturing imperfections and improve the analog and RF performance offering a high level of integration. The objective of the proposed research is to design digital friendly and performance tunable adaptive analog/RF circuits and systems with digital enhancement techniques for higher performance, better process variation tolerance, and more reliable operation and developing strategy for testing the proposed adaptive systems. An adaptation framework is developed for process variation tolerant RF systems which has two parts – optimized test stimulus driven diagnosis of individual modules and power optimal system level tuning. Another direct tuning approach is developed and demonstrated on a carbon nanotube based analog circuit. An adaptive switched mode power amplifier is designed which is more digital-intensive in nature and has higher efficiency, improved reliability and better process resiliency. Finally, a testing strategy for adaptive RF systems is shown which reduces test time and test cost compared to traditional testing.