Le parasite Varroa destructor provoque depuis plus de 30 ans la perte de nombreuses colonies à travers le monde. L’utilisation d’acaricides de synthèse s’est avérée inefficace au Canada et ailleurs dans le monde à la suite de la sélection de varroas résistants. Dans ce contexte, il est devenu impératif de trouver de nouveaux moyens pour contrôler cette peste apicole. Ce travail original de recherche a pour but de déterminer les paramètres fondamentaux d’une lutte intégrée contre la varroase fondée sur l’utilisation périodique de différents pesticides organiques (l’acide oxalique, l’acide formique et le thymol) associée à des seuils d’interventions. Les seuils d’intervention ont été déterminés à l’aide de régressions linéaires entre les taux de parasitisme par V. destructor et la formance zootechnique des colonies d’abeilles mellifères (production de miel et force des colonies). Un total de 154 colonies d’abeilles du Centre de recherche en sciences animales de Deschambault (CRSAD) ont été suivies de septembre 2005 à septembre 2006. Les seuils calculés et proposés à la suite de cette recherche sont de 2 varroas par jour (chute naturelle) au début mai, 10 varroas par jour à la fin juillet et de 9 varroas par jour au début septembre. L’efficacité des traitements organiques avec l’acide oxalique (AO), l’acide formique (AF) et le thymol a été vérifiée en mai (avant la première miellée) en juillet (entre deux miellées), en septembre (après la miellée et pendant le nourrissage des colonies) et en novembre (avant l’hivernage). L’acide oxalique a été appliqué en utilisant la méthode d’égouttement (4% d’AO p/v dans un sirop de sucrose 1 :1 p/v). L’acide formique a été appliquée sous forme de MiteAwayII™ (tampon commercial imbibé d’AF 65% v/v placé sur le dessus des cadres à couvain), Mitewipe (tampons Dri-Loc™ 10/15cm imbibés de 35 mL d’AF 65% v/v placés sur le dessus des cadres à couvain) ou Flash (AF 65% coulé directement sur le plateau inférieur d’une colonie, 2 mL par cadre avec abeilles). Le thymol a été appliqué sous forme d’Apiguard™ (gélose contenant 25% de thymol p/v placée sur le dessus des cadres à couvain). Les essais d’efficacité ont été réalisés de 2006 à 2008 sur un total de 170 colonies (98 appartenant au CRSAD et 72 appartenant au privé). Les résultats montrent que les traitements de printemps testés ont une faible efficacité pour le contrôle des varroas qui sont en pleine croissance durant cette période. Un traitement avec l’AF à la mi-été permet de réduire les taux de parasites sous le seuil en septembre mais il y a risque de contaminer la récolte de miel avec des résidus d’AF. Les traitements en septembre avec le MiteAwayII™ suivis par un traitement à l’acide oxalique en novembre (5 mL par égouttement entre chaque cadre avec abeilles, 4% d’AO p/v dans un sirop de sucrose 1 :1 p/v) sont les plus efficaces : ils réduisent les niveaux de varroase sous le seuil de 2 varroas par jour au printemps. Nos résultats montrent également que les traitements réalisés tôt en septembre sont plus efficaces et produisent des colonies plus fortes au printemps comparativement à un traitement réalisé un mois plus tard en octobre. En conclusion, ce travail de recherche démontre qu’il est possible de contenir le développement de la varroase dans les ruchers au Québec en utilisant une méthode de lutte intégrée basée sur une combinaison d’applications d’acaricides organiques associée à des seuils d’intervention. / For nearly 30 years, Varroa destructor has been responsible for the loss of many honey bee colonies around the world. The continued use of synthetic acaricides has resulted in their reduced efficacy against this pest in Canada and in other countries because of the selection of resistant mite populations. With this situation still present, it has become of utmost importance to develop efficient methods to control this apicultural pest. The major goal of this original work is to determine the fundamental parameters underlying the use of an integrated pest management (IPM) strategy against the varroa mite. The IPM strategy developed in this research is based on the periodic use of organic pesticides (oxalic acid, formic acid and thymol) and treatment threshold. Treatment thresholds were determined from linear regressions between the varroa mite levels and the zootechnical performances (honey production and colony strength) of honey bee colonies. A total of 154 honey bee colonies from the livestock of the “Centre de recherche en sciences animales de Deschambault” (CRSAD) were monitored from September 2005 to September 2006. Based on our findings, we propose economic treatment thresholds for three periods in the year: early May, late July and early September that are respectively 2, 10 and 9 varroa mites per day. Efficacy of the various organic treatments: formic acid (FA), oxalic acid (OA) and thymol was evaluated in May (before the first honey flow), in July between two honey flows, in September (after the honey flow and before the fall feeding of colonies) and in November (before wintering). OA was applied using the trickling method (4% OA w/v in a sucrose syrup 1:1 w/v). FA was applied using MiteAwayII™ (pads imbedded with FA 65% v/v placed on top of brood frames), Mitewipe (Dri-Loc™ pads 10/15cm imbedded with 35 mL FA 65% v/v placed on top of brood frames), Flash (FA 65% poured directly on the bottom board of colonies, 2 mL per frame with bees). Thymol was applied using Apiguard™ (gel with 25% de thymol w/v placed on top of the brood frames). Efficacy trials were realised from 2006 to 2008 on a total of 170 colonies (98 from the CRSAD and 72 owned by a commercial beekeeper). Results show that treatments applied in spring give low efficacy on reducing varroa mite populations that are in full growth at this time because of large amounts of brood available for mite reproduction. Application of a FA treatment in mid-summer offers the opportunity to reduce mite populations at the 11 mites per day September threshold but FA summer application is accompanied by a risk of incorporating residues in the harvested honey. Application of MiteAwayII™ in September followed by an oxalic acid treatment in November (trickling method 4% OA w/v in a sucrose syrup 1 :1 w/v, 5 mL between frames with bees) gave the best efficacy results: varroa mite levels are reduced below the 2 mites per day spring threshold. Our results also show that an early September management strategy of colonies for winter preparation (varroa treatment and fall feeding) gives greater varroa control, higher colony winter survival and stronger colonies in spring when compared to a later treatment in October. In conclusion, this work shows that varroa mite control in honey bee colonies in Québec is possible by using an integrated pest management strategy based on the application of a combination of organic acaricides in association with treatment thresholds.

Petroleum powered vehicles emit volatile organic compounds (VOCs) through combustion that contributes to the pollution of the environment. A technique in the 1970s was developed to decrease these emissions, especially for nitrogen oxides (NOx) and sulphuric oxides (SOx) which is called exhaust gas recirculation (EGR). The technique works by recirculating a portion of the combusted gas back into the engine, this limits the NOx and SOx emissions because of lower temperatures and less available oxygen. The problems that follow these effects is the formation and condensation of acids that corrode the material of the EGR system, which are created by many different reactions. It is of importance to understand how the compounds in the EGR system behaves through analysis of authentic and simulated condensates, which is why a quantitative method for these compounds are of interest. The aim of the project was to develop a simple quantitative analysis method for formic acid, acetic acid, and lactic acid in aqueous solution, which was done at Gränges Sweden AB. The technique used for detection and quantification was gas chromatography (GC) coupled to a flame ionization detector (FID) and a water compatible polyethylene glycol (PEG) column. Fractional factorial design (FFD) was used for determination of adequate operating parameters of the GC method and the sample preparation. Sample preparation only required filtration and pH adjustment prior to direct aqueous injection (DAI) to the chromatographic instrument. Detection of the analytes was very difficult because of non-compatibility with the FID, and quantification of asymmetric peak shapes made this problem worse, omitting lactic acid from further analysis. Limit of detection (LOD) and limit of quantification (LOQ) was 490 and 1640 ppm for formic acid and 120 and 400 ppm for acetic acid, with an injection volume of 0.3 μL and split ratio 10:1. Limits were too high for every EGR sample leaving no peaks detected for the sample preparation used. Further development should be done with complementary techniques and sample reprocessing in order to quantify the compounds.

No description available.

In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents.

Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate [(nBu3P)2Cu(acac)]. This liquid, non-fluorinated β-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160°C. Typical ALD-like growth behavior arises between 100 and 130°C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and self-saturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent electrochemical copper deposition, the combination of ALD copper and ruthenium proves advantageous, especially with respect to the quality of the electroplated films and their filling behavior in interconnect structures. Furthermore, the ALD process developed also bears potential for an integration with carbon nanotubes. / Kupferbasierte Mehrlagenmetallisierungssysteme in heutigen hochintegrierten elektronischen Schaltkreisen erfordern die Herstellung von Diffusionsbarrieren und leitfähigen Keimschichten für die galvanische Metallabscheidung. Diese Schichten von nur wenigen Nanometern Dicke müssen konform und fehlerfrei in strukturierten Dielektrika abgeschieden werden. Die sich abzeichnende weitere Verkleinerung der geometrischen Dimensionen des Leitbahnsystems erfordert Beschichtungstechnologien, die vorhandene Nachteile der bisher etablierten Physikalischen Dampfphasenabscheidung beheben. Die Methode der Atomlagenabscheidung (ALD) ermöglicht es, Schichten im Nanometerbereich sowohl auf dreidimensional strukturierten Objekten als auch auf großflächigen Substraten gleichmäßig herzustellen. Die vorliegende Arbeit befasst sich daher mit der Entwicklung eines ALD-Prozesses zur Abscheidung von Kupferoxidschichten, ausgehend von der metallorganischen Vorstufe Bis(tri-n-butylphosphan)kupfer(I)acetylacetonat [(nBu3P)2Cu(acac)]. Dieses flüssige, nichtfluorierte β-Diketonat wird bei Temperaturen zwischen 100 und 160°C mit einer Mischung aus Wasserdampf und Sauerstoff zur Reaktion gebracht. ALD-typisches Schichtwachstum stellt sich in Abhängigkeit des gewählten Substrats zwischen 100 und 130°C ein. Auf Tantalnitrid- und Siliziumdioxidsubstraten werden dabei sehr glatte Schichten bei gesättigtem Wachstumsverhalten erhalten. Auch auf Rutheniumsubstraten werden gute Abscheideergebnisse erzielt, jedoch kommt es hier zu einer merklichen Durchmischung des ALD-Kupferoxids mit dem Untergrund. Tantalsubstrate führen zu einer schnellen Selbstzersetzung des Kupferprecursors, in dessen Folge neben geschlossenen Schichten während der ALD auch immer isolierte Keime oder größere Partikel erhalten werden. Die mittels ALD gewachsenen Kupferoxidschichten können in Gasphasenprozessen zu Kupfer reduziert werden. Wird Ameisensäure als Reduktionsmittel genutzt, können diese Prozesse bereits bei ähnlichen Temperaturen wie die ALD durchgeführt werden, so dass Agglomeration der Schichten weitgehend verhindert wird. Als besonders vorteilhaft für die Ameisensäure-Reduktion erweisen sich Rutheniumsubstrate. Auch für eine Integration mit nachfolgenden Galvanikprozessen zur Abscheidung von Kupfer zeigen sich Vorteile der Kombination ALD-Kupfer/Ruthenium, insbesondere hinsichtlich der Qualität der erhaltenen galvanischen Schichten und deren Füllverhalten in Leitbahnstrukturen. Der entwickelte ALD-Prozess besitzt darüber hinaus Potential zur Integration mit Kohlenstoffnanoröhren.

Four cluster models for a copper(I)oxide (111) surface have been designed, of which three were studied with respect to their applicability in density functional calculations in the general gradient approximation. Formic acid adsorption on these systems was modelled and yielded four different adsorption structures, of which two were found to have a high adsorption energy. The energetically most favourable adsorption structure was further investigated with respect to its decomposition and a few reactions with adsorbed H and OH species using synchronous transit methods to estimate reaction barriers and single point energy calculations for the reaction energy.

Abstract Climate change and global warming are currently widely discussed topics, both of which potentially impact all the nations and industries. Carbon dioxide (CO2) and other green house gases (GHG) are seen as a major challenge. This doctoral dissertation aims to conduct techno-economic calculations on the possibilities of reducing the industrial use of fossil raw materials in Northern Finland. This doctoral dissertation analyses industrial CO2 emissions from five complementary perspectives: identifying significant potential industrial plants, analysing the replacement of fossil raw materials with wood biomass, considering combining different industrial sectors, the potential of biogas as industrial raw material, and estimating the economic significance of moisture in wood fuel. The study started by analysing all the relevant 262 regional environmental permits to find the significant industrial users of synthesis gas in the studied region. Processes used by each identified case were analysed carefully to identify the most potential change possibilities. Economic calculations were conducted for these cases using true production volumes. The aim was to reach solutions that were economically sound. Five industrial sites were identified as potential cases for replacing raw materials of synthesis gas or hydrogen with renewable alternatives. These sites include the Rautaruukki steel mill, Eka Chemicals’ hydrochloric acid plant, Kemira’s formic acid plant, Kemira’s hydrogen peroxide producing plant, and Talvivaara mining’s hydrogen plant. The main implications of this dissertation include providing tips for industrial managers, regional decision makers and legislators. Managers of companies with high energy consumption and/or high usage of fossil raw materials in their products can benefit from the results of this dissertation the most. Managers should conduct similar calculations, as in this study, by using exact figures relevant to their processes and raw materials. This doctoral dissertation also suggests finding new solutions for replacing fossil raw materials by combining two different industrial sectors, e.g. steel and chemical industries. Regional decision makers may utilise the calculations presented in this doctoral dissertation when developing regional strategies. / Tiivistelmä Ilmaston muutos ja globaali lämpeneminen ovat tällä hetkellä laajasti keskusteltuja aiheita, ja ne vaikuttavat kaikkiin maihin ja kaikkiin teollisuuden aloihin. Hiilidioksidi (CO2) ja muut kasvihuonekaasut nähdään suurena haasteena. Tämä väitöskirja pyrkii teknistaloudellisten laskelmien avulla tutkimaan mahdollisuuksia vähentää fossiilisten raaka-aineiden käyttöä Pohjois-Suomen alueella. Tämä väitöskirja analysoi teollisia CO2-päästöjä viidestä toisiaan täydentävästä näkökulmasta: identifioimalla merkittäviä teollisia tuotantolaitoksia, analysoimalla fossiilisten raaka-aineiden korvaamista puubiomassalla, tutkimalla erilaisten teollisten tuotantolaitosten yhdistämistä, tutkimalla biokaasun käyttöä mahdollisena teollisuuden raaka-aineena ja arvioimalla kosteuden taloudellista merkitystä puupolttoaineessa. Tutkimus alkoi analysoimalla kaikki alueen identifioidut 262 ympäristölupaa, jotta merkittävät synteesikaasun käyttäjät tulisivat esille. Jokaisen löydetyn tapauksen tuotantoprosessit analysoitiin huolellisesti, jotta potentiaalisimmat muutosmahdollisuudet huomioitaisiin. Teknistaloudellisia laskelmia tehtiin näille tapauksille käyttämällä todellisia tuotantolukuja. Tarkoituksena oli löytää taloudellisesti kannattavia vaihtoehtoja. Viisi teollista tuotantolaitosta identifioitiin tapauksiksi, joissa synteesikaasun tai vedyn raaka-aine voitaisiin korvata uusiutuvilla raaka-ainevaihtoehdoilla. Nämä tuotantolaitokset olivat Rautaruukin terästehdas, Eka Chemicalsin kloorivetyhapon tuotantolaitos, Kemiran muurahaishappotehdas, Kemiran vetyperoksiditehdas ja Talvivaaran kaivoksen vedyn tuotantolaitos. Tärkeimmät implikaatiot tästä väitöskirjatyöstä sisältävät pohdittavia ajatuksia teollisille toimijoille, alueellisille päätösten tekijöille ja lainsäätäjille. Korkean energian kulutuksen ja/tai suurten fossiilisten raaka-ainekäyttöjen yhtiöissä päätöksentekijät voivat hyödyntää parhaiten tämän väitöskirjan tuloksia. Päätöksentekijät voisivat käyttää esimerkkeinä tämän väitöskirjan laskelmia tehdessään omia analyyseja, jolloin heidän tulisi käyttää tarkkoja lukuja yritystensä prosesseista ja raaka-ainekäytöistä. Tämä väitöskirja ehdottaa myös etsimään uusia ratkaisuja fossiilisten raaka-aineiden korvaamisessa yhdistämällä tuotannollisesti erilaisia teollisia sektoreita esimerkiksi teräksen ja kemian tuotteiden valmistuksen. Alueelliset päätösten tekijät voivat hyödyntää väitöskirjassa esitettyjä laskelmia alueellisten strategioiden kehitystyössä.

Copper-based multi-level metallization systems in today’s ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate [(nBu3P)2Cu(acac)]. This liquid, non-fluorinated β-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160°C. Typical ALD-like growth behavior arises between 100 and 130°C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and self-saturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent electrochemical copper deposition, the combination of ALD copper and ruthenium proves advantageous, especially with respect to the quality of the electroplated films and their filling behavior in interconnect structures. Furthermore, the ALD process developed also bears potential for an integration with carbon nanotubes. / Kupferbasierte Mehrlagenmetallisierungssysteme in heutigen hochintegrierten elektronischen Schaltkreisen erfordern die Herstellung von Diffusionsbarrieren und leitfähigen Keimschichten für die galvanische Metallabscheidung. Diese Schichten von nur wenigen Nanometern Dicke müssen konform und fehlerfrei in strukturierten Dielektrika abgeschieden werden. Die sich abzeichnende weitere Verkleinerung der geometrischen Dimensionen des Leitbahnsystems erfordert Beschichtungstechnologien, die vorhandene Nachteile der bisher etablierten Physikalischen Dampfphasenabscheidung beheben. Die Methode der Atomlagenabscheidung (ALD) ermöglicht es, Schichten im Nanometerbereich sowohl auf dreidimensional strukturierten Objekten als auch auf großflächigen Substraten gleichmäßig herzustellen. Die vorliegende Arbeit befasst sich daher mit der Entwicklung eines ALD-Prozesses zur Abscheidung von Kupferoxidschichten, ausgehend von der metallorganischen Vorstufe Bis(tri-n-butylphosphan)kupfer(I)acetylacetonat [(nBu3P)2Cu(acac)]. Dieses flüssige, nichtfluorierte β-Diketonat wird bei Temperaturen zwischen 100 und 160°C mit einer Mischung aus Wasserdampf und Sauerstoff zur Reaktion gebracht. ALD-typisches Schichtwachstum stellt sich in Abhängigkeit des gewählten Substrats zwischen 100 und 130°C ein. Auf Tantalnitrid- und Siliziumdioxidsubstraten werden dabei sehr glatte Schichten bei gesättigtem Wachstumsverhalten erhalten. Auch auf Rutheniumsubstraten werden gute Abscheideergebnisse erzielt, jedoch kommt es hier zu einer merklichen Durchmischung des ALD-Kupferoxids mit dem Untergrund. Tantalsubstrate führen zu einer schnellen Selbstzersetzung des Kupferprecursors, in dessen Folge neben geschlossenen Schichten während der ALD auch immer isolierte Keime oder größere Partikel erhalten werden. Die mittels ALD gewachsenen Kupferoxidschichten können in Gasphasenprozessen zu Kupfer reduziert werden. Wird Ameisensäure als Reduktionsmittel genutzt, können diese Prozesse bereits bei ähnlichen Temperaturen wie die ALD durchgeführt werden, so dass Agglomeration der Schichten weitgehend verhindert wird. Als besonders vorteilhaft für die Ameisensäure-Reduktion erweisen sich Rutheniumsubstrate. Auch für eine Integration mit nachfolgenden Galvanikprozessen zur Abscheidung von Kupfer zeigen sich Vorteile der Kombination ALD-Kupfer/Ruthenium, insbesondere hinsichtlich der Qualität der erhaltenen galvanischen Schichten und deren Füllverhalten in Leitbahnstrukturen. Der entwickelte ALD-Prozess besitzt darüber hinaus Potential zur Integration mit Kohlenstoffnanoröhren.

Four cluster models for a copper(I)oxide (111) surface have been designed, of which three were studied with respect to their applicability in density functional calculations in the general gradient approximation. Formic acid adsorption on these systems was modelled and yielded four different adsorption structures, of which two were found to have a high adsorption energy. The energetically most favourable adsorption structure was further investigated with respect to its decomposition and a few reactions with adsorbed H and OH species using synchronous transit methods to estimate reaction barriers and single point energy calculations for the reaction energy.:1 Introduction 1.1 Preliminary Work 1.2 Known Reactions and Issues 1.3 Overview of Reactions and Species involved in Formic Acid Decomposition 2 Theoretical Background 2.1 The Schrödinger-Equation 2.2 Density Functional Theory 2.3 Exchange-Correlation Functionals 2.4 The Self-Consistent-Field Procedure 2.5 Geometry Optimization and Transition State Searches 2.6 Kinetics 3 Computational Details 3.1 Synchronous Transit Schemes 3.2 Transition State Searches using Eigenvector Following 4 Model System 5 Results and Discussion 5.1 Geometry of the Cu2O cluster structures 5.2 Adsorption of formic acid 5.3 Decomposition and Reaction Paths 5.3.1 Vibrational Analysis of the adsorbed Formic Acid Molecule 5.3.2 Reaction Modelling using Linear Synchronous Transit 5.3.3 Transition State Searches using Eigenvector Following 6 Summary and Outlook

In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents.