In den letzten Jahren gibt es großes Interesse am SiGeSn Materialsystem aufgrund seines Potentials für die Verwendung in der Optoelektronik, Elektronik und Photovoltaik. Während jedoch die binären Verbindungshalbleiter Si(x)Ge(1-x) und Ge(1-y)Sn(y) schon intensiv untersucht wurden, sind die Materialeigenschaften des ternären Verbindungshalbleiters Ge(1-x-y)Si(x)Sn(y) und Nanostrukturen basierend auf diesem Verbindungshalbleiter noch weitgehend unbekannt. In dieser Arbeit werden drei theoretische/theoretisch-experimentelle Studien zur Untersuchung des SiGeSn Materialsystems vorgestellt. In einer Studie wird die Abhängigkeit der Größe der direkten Bandlücke von der Zusammensetzung des Ge(1-x-y)Si(x)Sn(y) Verbindungshalbleiters untersucht. Basierend auf Messungen der Rutherford Rückstreuung, Röntgenbeugung und Photolumineszenz (PL) von Ge(1-x-y)Si(x)Sn(y) Proben mit an Ge angepassten Gitterkonstanten wird die Abhängigkeit von Größe der direkten Bandlücke und der Materialkomposition mit einer quadratischen Gleichung beschrieben. Weiterhin wird die Bandanordnung der elementaren Halbleiter Si, Ge und Sn an Grenzflächen untersucht. Anhand von Kohn-Sham basierter Density Functional Theory (DFT) in Kombination mit Local Density Approximation (LDA) berechneten Bandstrukturen von Grenzflächen zwischen Elementarhalbleitern wird der Versatz im Valenzband zwischen Si, Ge und Sn untersucht. Es wird gezeigt, dass aufgrund zu kleiner Bandlücken resultierend aus dem Kohn-Sham-Ansatz in Verbindung mit der LDA ein unphysikalischer „Broken Gap“ Versatz zwischen Ge und Sn Bändern entsteht. In einer dritten Studie werden die PL-Spektren von Ge Quantentöpfen mit Si Barrieren untersucht. Um die Abhängigkeit der PL-Spektren von Anregungsintensität und Temperatur zu verstehen, wird ein selbstkonsistentes Effektives-Massen-Model entwickelt. Mit diesem Model ist es möglich den Einfluss von Temperatur und Bandauffüllung auf das PL-Spektrum zu untersuchen. / The SiGeSn semiconductor material system has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. While the binary alloy Si(x)Ge(1-x) and Ge(1-y)Sn(y) have already been well studied, the properties of bulk and heterostructures involving the Ge(1-x-y)Si(x)Sn(y) ternary alloy are largely unknown. In this thesis, we present the results of three theoretical/experimental-theoretical investigations concerning the SiGeSn material system. First, we investigate the compositional dependence of the direct band-gap of Ge(1-x-y)Si(x)Sn(y) alloys. Based on Rutherford backscattering, x-ray diffraction, and photoluminescence (PL) measurement of Ge(1-x-y)Si(x)Sn(y) alloys lattice-matched to Ge, we describe the compositional dependence of the band gap using a quadratic equation. We predict Ge(1-x-y)Si(x)Sn(y) alloys lattice-matched to Ge to be direct-band-gap semiconductors for Sn concentrations larger than 12%. Secondly, we investigate the band alignment between the elemental semiconductors Si, Ge, and Sn. Performing bulk and interface calculations using density functional theory (DFT) in combination with the local density approximation (LDA), we attempt to calculate the valence band offset between the elemental semiconductors. We find that the Kohn-Sham based DFT-LDA calculations are flawed by the underestimation of the band-gaps of the elemental semiconductors, which leads to a false broken gap band alignment between Ge and Sn. Third, we study the PL of ultrathin Ge multiple quantum well (multiple-QW) structures grown on Si. To understand the excitation density and temperature related shifts of the PL spectra of the sample, we develop a self-consistent multivalley effective mass model. Using second-order perturbation theory, we calculate the indirect phonon-assisted radiative spontaneous recombination rate together with the no-phonon peak energy and compare our results to the experimental results.

Thema dieser Arbeit ist die Synthese von hexagonalen (Al,Ga,In)N-Heterostrukturen mittels plasma-unterstützter Molekularstrahlepitaxie. Die Proben werden entlang der polaren [0001]-Richtung und der unpolaren [1100]-Richtung auf SiC(0001)- bzw. g-LiAlO2(100)-Substraten gewachsen. Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen, vibronischen und elektrischen Eigenschaften der Proben wird untersucht. Im Vergleich zu den übrigen III-V-Halbleitern zeichnen sich die hexagonalen Nitride besonders durch die Größe ihrer Fehlpassungen und elektrischen Polarisationsfelder aus. Eine Einführung in diese beiden wichtigen Eigenschaften wird gegeben, insbesondere für [0001]- und [1100]-orientierte Schichten. Um Verspannungen und elektrische Polarisationsfelder in korrekter Art und Weise zu berücksichtigen, wird ein effizientes Modell zur dynamischen Simulation von Röntgenbeugungsprofilen formuliert und auf hexagonale sowie kubische Kristalle angewandt. Die Synthese von GaN-Pufferschichten auf SiC(0001)- und g-LiAlO2(100)-Substraten wird diskutiert. Das GaN-Wachstum auf SiC(0001) erfolgt entlang der üblichen polaren [0001]-Richtung. Ein neuartiger Freiheitsgrad der GaN-Epitaxie wird durch das Wachstum von GaN entlang der unpolaren [1100]-Richtung auf g-LiAlO2(100) erreicht. Eine in-situ Strategie zur reproduzierbaren Abscheidung von GaN-Pufferschichten wird erarbeitet, die auf der Kontrolle der Wachstumsparameter durch Beugung von hochenergetischen Elektronen beruht. Die Schichten sind einphasig innerhalb der Nachweisgrenze von Röntgenbeugung und zeichnen sich durch glatte Oberflächen aus, die für das weitere Wachstum von Heterostrukturen gut geeignet sind. Es wird gezeigt, daß die strukturellen Eigenschaften der Pufferschichten sehr stark von der Substratpräparation abhängen. Ausgezeichnete strukturelle Eigenschaften werden auf sauberen und glatten SiC(0001)-Substraten erzielt, wogegen GaN(1100)-Filme unter der schlechteren Oberflächenqualität der g-LiAlO2(100)-Substrate leiden. GaN/(Al,Ga)N-Multiquantenwells (MQWs) mit identischer Schichtfolge werden auf den beiden Sorten von GaN-Pufferschichten gewachsen. Wegen der verschiedenen Orientierungen der polaren c-Achse relativ zur Wachstumsrichtung treten in der Rekombination von Ladungsträgern erhebliche Unterschiede auf. Es wird gezeigt, daß in [1100]-orientieren Wells Flachbandbedingungen herrschen. Im Gegensatz dazu existieren starke elektrostatische Felder in [0001]-orientierten Wells. Daher ist die Übergangsenergie von [0001]-orientierten Wells rotverschoben relativ zur Übergangsenergie der [1100]-orientierten Wells. Weiterhin besitzen die [0001]-orientierten Wells sehr viel längere Zerfallszeiten in der Photolumineszenz (PL). Beide Ergebnisse sind in quantitativer Übereinstimmung mit theoretischen Vorhersagen, die auf selbstkonsistenten Berechnungen von Bandprofilen und Wellenfunktionen mittels der Poisson- und Schrödingergleichungen in der Effektivmassen-Näherung basieren. Die Emission der [0001]-orientierten Wells ist isotrop, während die Emission der [1100]-orientierten Wells stark (>90%) senkrecht zur [0001]-Richtung polarisiert ist. Diese Ergebnisse sind in sehr guter Übereinstimmung mit den unterschiedlichen Valenzbandstrukturen der Wells. Das Wachstum von (In,Ga)N/GaN-MQWs wird untersucht. Massive Oberflächensegregation von In wird mit Beugung hochenergetischer Elektronen, Sekundärionenmassenspektrometrie, Röntgenbeugung und PL nachgewiesen. Rechteckige In-Profile belegen einen Segregationsmechanismus nullter Ordnung und nicht (wie bei anderen Materialsystemen beobachtet) einen erster Ordnung. Diese In-Segregation während des metallstabilen Wachstums resultiert in MQWs mit geringem Überlapp der Elektronen- und Lochwellenfunktionen, weil die Wells sehr viel dicker als beabsichtigt sind. Eine Verminderung der In-Segregation ist möglich durch N-stabiles Wachstum, führt jedoch zu rauhen Grenzflächen. Eine Strategie zum Wachstum von MQWs mit glatten Grenzflächen und hohen Quanteneffizienzen wird vorgestellt. Die strahlende Rekombination von (In,Ga)N/GaN-MQWs wird diskutiert. Es wird gezeigt, daß sowohl Zusammensetzungsfluktuationen als auch elektrostatische Felder für ein eingehendes Verständnis der Rekombination berücksichtigt werden müssen. Die Temperaturabhängigkeit der strahlenden Lebensdauer wird gemessen, um die Dimensionalität des Systems aufzuklären. Für ein quantitatives Verständnis wird ein Ratengleichungsmodell zur Analyse der Daten benutzt. Bei niedrigen Temperaturen wird die Rekombination von lokalisierten Zustände geprägt, wohingegen ausgedehnte Zustände bei höheren Tenmperaturen dominieren. Diese Analyse zeigt, daß die Lokalisierungstiefe in diesen Strukturen unterhalb von 25 meV liegt. / In this work, we investigate the synthesis of wurtzite (Al,Ga,In)N heterostructures by plasma-assisted molecular beam epitaxy. The layers are grown along the polar [0001] and the non-polar [1100] direction on SiC(0001) and g-LiAlO2(100) substrates, respectively. We examine the impact of deposition conditions on the structural, morphological, optical, vibrational and electrical properties of the films. An introduction is given to the most important properties of wurtzite nitride semiconductors: strain and electrical polarization fields of a magnitude not found in other III-V semiconductors. Particular emphasis is paid on [0001] and [1100] oriented layers. In order to correctly account for these phenomena in the samples under investigation, an efficient model for the dynamical simulation of x-ray diffraction (XRD) profiles is formulated and presented for wurtzite and zincblende crystals. The deposition of GaN buffer layers on two substrates, SiC(0001) and g-LiAlO2(100), is discussed. The conventional polar [0001] direction is obtained on SiC(0001) substrates. A new degree of freedom for GaN epitaxy is demonstrated by the growth of GaN along a non-polar direction, namely, [1100] on g-LiAlO2(100). An in-situ strategy for the reproducible growth of these GaN buffers is developed based on reflection high-energy electron diffraction (RHEED). The films are single-phase within the detection limit of high-resolution XRD and exhibit smooth surface morphologies well suited for subsequent growth of heterostructures. The structural properties of these samples are shown to be very sensitive to substrate preparation before growth. Smooth and clean SiC(0001) substrates result in excellent structural properties of GaN(0001) layers whereas GaN(1100) films still suffer from the inferior morphological and chemical quality of g-LiAlO2(100) substrates. Identically designed GaN/(Al,Ga)N multiple quantum wells (MQWs) are deposited on these two types of buffer layers. Significant differences in recombination due to the different orientations of the polar c-axis with respect to the growth direction are detected in photoluminescence (PL). It is demonstrated that flat-band conditions are established in [1100] oriented wells whereas strong electrostatic fields have to be taken into account for the [0001] oriented wells. Consequently, the transition energy of the [0001] oriented wells is red-shifted with respect to the [1100] oriented wells. Furthermore, [0001] oriented wells exhibit significantly prolonged PL decay times. These results are in quantitative agreement with theoretical predictions based on self-consistent effective-mass Schrödinger-Poisson calculations of the band profiles and wave functions. Finally, while the emission from [0001] oriented wells is isotropic, the emission from [1100] oriented wells is strongly polarized (>90%) normal to the [0001] axis in sound agreement with the different valence band structures of the wells. The growth of (In,Ga)N/GaN MQWs is studied. Massive In surface segregation (evidenced by RHEED, XRD, secondary-ion mass-spectrometry and PL) is shown to result in top-hat profiles and is therefore a zeroth order process instead of a first order process as observed for other materials systems. In segregation during metal-stable growth results in quantum wells with poor electron-hole wavefunction overlap since the actual well width is much larger than the intended one. Reduction of In segregation by N-stable conditions is possible but inevitably delivers rough interfaces. A strategy for obtaining (In,Ga)N/GaN MQWs with smooth interfaces and high quantum efficiency is devised. The radiative recombination from (In,Ga)N/GaN MQWs is examined. It is demonstrated that both compositional fluctuations and electrostatic fields have to be taken into account for a thorough understanding of the emission from these structures. The temperature dependence of the radiative decay time is measured to probe the dimensionality of the system. For a quantitative understanding, a rate-equation model is utilized for analyzing the data. For low temperatures, recombination is governed by localized states whereas for high temperatures extended states dominate. This analysis shows that the localization depth in these structures is below 25 meV.

Die chloroplastidäre Genexpression ist durch charakteristische posttranskriptionelle Ereignisse, wie RNA-Prozessierung, RNA-Stabilität, RNA-Edierung oder RNA-Spleißen gekennzeichnet. Diese Prozesse werden fast ausnahmslos durch kernkodierte Proteine realisiert. PPR-Proteine (Pentatricopeptid repeat) stellen unter diesen kernkodierten Faktoren die größte Proteinfamilie dar. Das plastidäre Protein P67 gehört zur kleinen Untergruppe der PPR-Proteine mit SMR-Domäne (small MutS-related), deren molekulare Funktion im organellären Nukleinsäuremetabolismus bislang unverstanden ist. P67 zeigt eine nahe Verwandtschaft zu GUN1, einem zentralen Bestandteil retrograder Signalwege. Der hier analysierte P67-Knockout in Mais verursacht hellgrüne Phänotypen, eine drastische Reduktion der plastidären ATPase und Keimlingsletalität, was die essentielle Beteiligung von P67 an den Prozessen der Chloroplastenbiogenese und der Expression der plastidär kodierten ATPase-Untereinheiten vermuten lässt. Mögliche Implikationen eines fehlenden Phänotyps von Mutanten des P67-Orthologs aus Arabidopsis thaliana werden diskutiert. Eine Ausnahmestellung unter den Proteinen des chloroplastidären RNA-Metabolismus nimmt der einzige plastidär kodierte RNA-Reifungsfaktor MatK ein. Die genomische Position des matK-Gens im Intron der trnK-UUU ist in allen grünen Landpflanzen konserviert. MatK ist mit bakteriellen Maturasen verwandt, die spezifisch den Spleißprozess ihres Heimatintrons unterstützen. Dagegen deuten genetische und phylogenetische Studien zusätzliche MatK-Funktionen in trans an. In der vorliegenden Arbeit wird die spezifische Interaktion von MatK mit sieben Gruppe-IIA-Intron enthaltenden Transkripten in vivo gezeigt. Darunter befinden sich vier tRNA-Vorläufer (trnK-UUU mit dem matK-Heimatintron sowie trnV-UAC, trnI-GAU, trnA-UGC) und drei proteinkodierende Vorläufertranskripte (rpl2, rps12, atpF). Die Feinkartierung der MatK-Bindung im trnK-Heimatintron zeigt eine Assoziation mit multiplen Regionen. Organelläre Gruppe-II-Introns gelten als Vorläufer der spleißosomalen Introns. Die Assoziation mit multiplen Gruppe-II-Introns macht MatK somit zu einem interessanten Modell für die Evolution der transaktiven Spleißaktivität im Kern. Analysen der Expression von MatK und seinen Zielen deuten auf ein komplexes Muster möglicher regulativer Interaktionen hin. / Chloroplast gene expression is characterized by posttranscriptional events including RNA cleavage, RNA stability, RNA editing, and RNA splicing. The underlying processing machinery is almost exclusively encoded in the nucleus. PPR proteins (pentatricopeptide repeat) form the biggest protein family among these factors and are major players of the aforementioned posttranscriptional processes. The plastidial protein P67 is a member of a small subgroup of PPR proteins with SMR domain (small MutS-related). Molecular functions of this protein family in organellar nucleic acid metabolism are yet unknown. P67 is a close relative of GUN1, an essential component of the chloroplast to nucleus retrograde signalling pathway. It is shown here that a P67 knockout in maize causes pale green phenotypes, a dramatic reduction in ATPase levels, and seedling lethality. This indicates an essential role of P67 for chloroplast biogenesis and expression of the plastid encoded ATPase. The finding that mutants of the P67-orthologe in Arabidopsis lack a phenotype is discussed against the background of physiological differences between maize and Arabidopsis. A special case among proteins involved in plastid RNA metabolism is MatK - the only plastid encoded RNA maturation factor. The genomic position of the matK gene in the trnK-UUU intron is conserved throughout autotrophic land plants. MatK is related to bacterial maturases - highly specific splice factors supporting splice processes of their respective home introns. There is, however, indirect genetic and phylogenetic evidence that MatK acts also in trans as a common plastidial splice factor serving various group II introns. This study shows that MatK interacts specifically with seven group IIA introns in vivo. Among them are four tRNA precursor transcripts (trnK-UUU including the matK home intron as well as trnV-UAC, trnI-GAU, trnA-UGC) and three protein-coding precursors (rpl2, rps12, atpF). Fine mapping of MatK binding sites within the trnK home intron uncovers protein RNA interactions with diverse intron regions. Organellar introns have been suggested as evolutionary ancestors of nuclear spliceosomal introns. Consequently, association of MatK with multiple group II intron ligands makes the plastidial maturase an attractive model for an early trans-acting nuclear splice activity. Analyses of the expression of MatK and its targets revealed a complex pattern of possible regulatory interactions.

Evolution of Piperales – matK gene and trnK intron sequence data reveal lineage specific resolution contrast. Piperales are one of the largest basal angiosperm orders with a nearly worldwide distribution. The order includes three species rich genera, Piper (ca. 1,000 species), Peperomia (ca. 1,500-1,700 species), and Aristolochia s. l. (ca. 500 species). Sequences of the matK gene and the non-coding trnK group II intron are analysed for a dense set of 105 taxa representing all families (except Hydnoraceae) and all generic segregates (except Euglypha within Aristolochiaceae) of Piperales. A large number of highly informative indels are found in the Piperales trnK/matK dataset. Within a narrow region approximately 500 nt downstream in the matK coding region (CDS), a length variable simple sequence repeat (SSR) expansion segment occurs, in which insertions and deletions have led to short frame-shifts. These are corrected shortly afterwards, resulting in a maximum of 6 amino acids being affected. Furthermore, additional non-functional matK copies were found in Zippelia begoniifolia, which can easily be discriminated from the functional open reading frame (ORF). The trnK/matK sequence data fully resolve relationships within Peperomia, whereas they are not effective within Piper. The resolution contrast is correlated with the rate heterogenity between those lineages. Parsimony, Bayesian and likelihood analyses result in virtually the same topology, and converge on the monophyly of Piperaceae and Saururaceae. Lactoris gains high support as sister to Aristolochiaceae subf. Aristolochioideae, but the different tree inference methods yield conflicting results with respect to the relationships of subfam. Asaroideae. In Piperaceae, a clade formed by the monotypic genus Zippelia and the small genus Manekia (=Sarcorhachis) is sister to the two large genera Piper and Peperomia. Systematics of pipevines – Combining morphological and fast-evolving molecular characters to investigate the relationships within subfamily Aristolochioideae (Aristolochiaceae) A combined phylogenetic analysis of the Aristolochioideae was conducted based on 72 morphological characters and molecular datasets (matK gene, trnK intron, trnL intron, trnL-trnF spacer). The analysis sampled 33 species as the ingroup, including two species of Thottea and 30 species of Aristolochia and the monotypic genus Euglypha, which represent all the infrageneric taxa formally described; Saruma henryi and Asarum caudatum were used as the outgroup. The results corroborate a sister-group relationship between Thottea and Aristolochia, and the paraphyly of Aristolochia with respect to Euglypha that consequently should be included into Aristolochia. Two of the three subgenera within Aristolochia (Isotrema and Pararistolochia) are shown to be monophyletic, whereas the signal obtained from the different datasets about the relationships within subg. Aristolochia is low and conflicting, resulting in collapsed or unsupported branches. The relationship between the New World and the Old World species of subgenus Aristolochia is conflictive because morphological data support these two groups as monophyletic, whereas molecular data show the monophyletic Old World species of Aristolochia nested within the New World species. A sister group relationship is proposed between A. lindneri and pentandrous species, which suggests that a group of five species from central and southern South America (including A. lindneri) could be monophyletic and sister to Aristolochia subsection Pentandrae, a monophyletic taxon consisting of about 35 species from southern USA, Mesoamerica, and the West Indies. Colonisation, phylogeography and evolution of endemism in Mediterranean Aristolochia (Aristolochiaceae). This study provides evidence for a multiple colonisation of the western Old World from Asian ancestors within Aristolochia section Diplolobus (subsection Aristolochia and Podanthemum). Within subsection Podanthemum it is assumed, that the colonisation of the African continent happened at least two times independently. In contrast, for subsection Aristolochia, a rapid morphological radiation in the Near East (or close to this area) with subsequent star like colonisation of the different current distribution areas, which is not paralleled on the molecular level, appears to be more likely. Phylogenetic tree reconstruction is unsupported for these clades, but most clades are highly supported as monophyletic. Interestingly the Mediterranean and temperate Eurasian species, which are morphologically distinct (A. pistolochia, A. clematitis) are not clustering within the main clades, but are independent lineages. Analogue, A. rigida a species from Somalia is well-supported sister to the subsection Aristolochia. Within subsection Podanthemum the colonisation event from an Asian ancestor is clearly traceable, whereas in subsection Aristolochia the path is not traceable, since the ancestors are extinct or not present in the connecting areas. Within the Mediterranean, Near East and Caucasian species of subsection Aristolochia two morphologically and biogeographically well supported groups can be identified: the Near East/Caucasian species and the West Mediterranean species. The previous groupings for the latter, based on morphological characters, could be substantiated only partly by our results. This study provides the first phylogeny of all West Mediterranean species. In addition an independent complex is established including some micro endemic species. The phylogenetic results are discussed with respect to biogeography, and morphology, to give a first insight into the radiation and colonisation of the genus Aristolochia in the Mediterranean region. Universal primers for a large cryptically simple cpDNA microsatellite region in Aristolochia. We provide a new and valuable marker to study species relationships and population genetics in order to trace evolutionary, ecological, and conservational aspects in the genus Aristolochia. Universal primers for amplification and subsequent sequencing of a chloroplast microsatellite locus inside the trnK intron are presented. Utility of the primers has been tested in 32 species representing all clades of Aristolochia, including population studies within the A. pallida complex, A. clusii and A. rotunda. The microsatellite region is characterized as a (AnTm)k repeat of 22–438 bp containing a combination of different repeats arranged as ‘cryptically simple’. Trapped! Pollination of Aristolochia pallida Willd. in the Mediterranean A first study of the pollination biology of a Mediterranean Aristolochia species in its natural habitat is presented. 183 flowers of Aristolochia pallida were investigated, which in total contained 73 arthropods, dominated by two groups of Diptera, Sciaridae (37%) and Phoridae (19%). However, only Phoridae are regarded as potential pollinators, since pollen has been found exclusively on the body surfaces of these insects. All Phoridae belong to the genus Megaselia and are recognised as four undescribed species. The measurements of flower and insect dimensions suggest that size is an important constrain for successful pollination: 1) the insects must have a definitive size for being able to enter the flower and 2) must be able to get in touch with the pollen. Only very few insect groups found in Aristolochia pallida fulfil these size requirements. However, size alone is not a sufficient constrain as too many fly species of the same size might be trapped but not function as pollinators. Instead, specific attraction is required as otherwise pollen is lost. Since all trapped Phoridae are males, a chemical attraction (pheromones) is proposed as an additional constrain. Since A. pallida flowers are protogynous, the record of Megaselia loaded with pollen found in a flower during its female stage proves that this insect must have been visited at least one different flower during its male stage before. Further on, this observation provides strong evidence that the flowers are cross-pollinated. All these factors indicate a highly specialised pollination of Aristolochia pallida by Megaselia species.

School of Economics, Diss.--Helsinki, 2007. / Enth. 3 Beitr.

No description available.

Within the past decades, wavelets and associated wavelet transforms have been intensively investigated in both applied and pure mathematics. They and the related multi-scale analysis provide essential tools to describe, analyse and modify signals, images or, in rather abstract concepts, functions, function spaces and associated operators. We introduce the concept of diffusive wavelets where the dilation operator is provided by an evolution like process that comes from an approximate identity. The translation operator is naturally defined by a regular representation of the Lie group where we want to construct wavelets. For compact Lie groups the theory can be formulated in a very elegant way and also for homogeneous spaces of those groups we formulate the theory in the theory of non-commutative harmonic analysis. Explicit realisation are given for the Rotation group SO(3), the k-Torus, the Spin group and the n-sphere as homogeneous space. As non compact example we discuss diffusive wavelets on the Heisenberg group, where the construction succeeds thanks to existence of the Plancherel measure for this group. The last chapter is devoted to the Radon transform on SO(3), where the application on diffusive wavelets can be used for its inversion. The discussion of a variational spline approach provides criteria for the choice of points for measurements in concrete applications.

NJ, Univ., Dep. of Economics, Diss.--Princeton, 2004. / Kopie, ersch. im Verl. UMI, Ann Arbor, Mich. - Enth. 4 Beitr.

To understand the mechanism of a pressure-induced structural phase transition, it is important to know which bonding changes lead to the stabilization of the new structure. A useful approach in this regard is the quantum chemical topology, which provides a large variety of indicators for the characterization of interatomic interactions. In this work, a number of topological indicators are used to analyze the bonding changes during the pressure-induced phase transition from the cubic diamond (cd) to the β-Sn-type structure of the elements of the 14th group of the periodic table. The ability of these indicators to reflect the presence of the cd → β-Sn transition in experiment for Si, Ge and Sn and its absence for carbon is investigated. Furthermore, the effect of pressure on the interatomic interactions in the cd- and β-Sn-type structures is examined. It is observed that the energy change along the cd → β-Sn transformation pathway correlates with the evolution of certain parameters of the electron density and the electron localizability indicator (ELI-D). Accordingly, criteria of structural stability were formulated based on characteristics of interatomic interactions. These results can serve as guidelines for the investigation of other solid-state phase transformations by the topological methods.

Dans une Allemagne détruite et divisée qui tente de faire face à son passé nazi, et dans une Amérique aux prises avec le maccarthysme et la guerre froide, quatre jeunes poètes et photographes scrutent les soubresauts de l’histoire. René Burri dans Les Allemands, Hans Magnus Enzensberger dans Landessprache, Robert Frank dans Les Américains, et Allen Ginsberg dans Howl and other poems se font les consciences de leur époque. Ils conçoivent leur pratique artistique comme l’exercice d’une essentielle critique face à un ordre social établi qui ne l’autorise guère. A travers mots et images, ils passent au crible la pensée dominante (« american way of life », « melting-pot », « miracle économique », « culpabilité collective ») et font saillir les paradoxes et apories qui la sous-tendent. Tant bien que mal, ils tentent de dessiner les contours d’une identité à la fois collective – celle d’un peuple – et individuelle – la leur, aux prises avec une société dans laquelle ils éprouvent toutes les difficultés à s’incarner. Ils trouvent appui auprès de figures littéraires, frères de révoltes contemporains ou passés, qui les accompagnent dans leur résistance. Chacun à leur manière, ils explorent de multiples voies/voix, réelles ou imaginaires, pour échapper aux formes d’enfermement et d’aliénation qui pèsent sur eux : itinérance, voyage, anarchie, utopie, drogue, folie, dédoublement poétique. A des degrés divers, leur geste poétique ou photographique se traduit en un geste phénoménologique qui s’abreuve d’images ou de sensations aiguisant la perception. C’est par ce geste, à la fois créateur et critique, qu’ils touchent au nerf de leur époque. / Four young poets and photographers trawl through the troughs and peaks of history in a divided and destroyed Germany struggling to come to terms with its Nazi past and an America grappling with McCarthysm and the Cold War. René Burri in Les Allemands, Hans Magnus Enzensberger in Landessprache, Robert Frank in Les Américains, and Allen Ginsberg in Howl and other poems are the consciences of their time. They see their artistic activity as an essential criticism of a social order which only grudgingly allows them to do so. They thoroughly examine the prevailing opinion ("American way of life", "melting pot", "economic miracle", "collective responsibility") through their words and images and in doing so cast light on the paradoxes and aporiae that underline it. Somehow, they attempt to draw the outlines of an identity that is both collective – that of a people – and individual – their own, all the time battling against a society in which they have difficulty existing. They grasp at literary figures, rebellious brothers from the present or the past who give them comfort in their act of resistance. Each in his way explores several paths and voices – real or imaginary – in order to escape from the imprisonment and alienation that threatens him: wandering, traveling, anarchy, utopia, drug-use, madness or a poetical dual personality are all brought to bear. In various degrees their poetical or photographical gesture finds expression in a phenomenological gesture that feeds on living images and sensations that sharpen the sense of perception. It is with this critical gesture, at the same time both creative and critical, that they capture the spirit of their age.