This thesis on multicarrier effects in the magnetotransport and optical properties of Mercury Cadmium Telluride (MCT or HgCdTe) covers mainly: design, construction and calibration of a 12T 4K and 19T 77K pulsed high magnetic field systems; temperature dependent magnetotransport measurements upto 15T performed on the home-built pulsed magnet systems; computational techniques developed to extract densities and mobilities of various carriers, especially low mobility heavy holes, participating in conduction; theoretical analysis of heavy hole mobility based on Boltzmann transport equation; temperature dependent optical absorption experiments in the Mid and Far-IR on bulk and thin film samples; and theoretical modelling of optical absorption below bandgap. The work essentially probes the low and high frequency conductivity of the semiconductor alloy Hg1?xCdxTe by performing microscopic calculations of scattering related phenomena of its free carriers at higher temperatures (200 K–300 K) and comparing with experimental data. Special attention is given to properties of heavy holes as the effects due to these carriers appear only at higher magnetic fields. It is demonstrated that in this temperature range and at high magnetic fields, taking both measured resistivity and derived conductivity in the multicarrier analysis gives better results which are then applied to explain both heavy hole mobility as well as free carrier absorption without further fitting parameters and using a minimal set of necessary intrinsic properties. The agreement thus obtained with experimental data is shown to be excellent. The bulk and epilayer samples used in this thesis were grown by the MCT group headed by R. K. Sharma (SSPL, Delhi). The organization of the thesis is as follows: Chapter 1 The importance of Mercury Cadmium Telluride as a narrow gap semiconductor for infrared detection is introduced. The relevant physical and material properties of HgCdTe are reviewed. Chapter 2 A low cost 12T pulsed magnet system has been integrated with a closed-cycle Helium refrigerator (CCR) for performing magnetotransport measurements. Minimal delay between pulses and AC current excitation with software lock-in to reduce noise enable quick but accurate measurements to be performed at temperatures 4K-300K upto 12T. An additional pulsed magnet operating with a liquid nitrogen cryostat extends the range upto 19T. The instrument has been calibrated against a commercial superconducting magnet by comparing quantum Hall effect data in a p-channel SiGe/Si heterostructure and common issues arising out of pulsed magnet usage have been addressed. The versatility of the system is demonstrated through magnetotransport measurements in a variety of samples such as heterostructures, narrow gap semiconductors and those exhibiting giant magnetoresistance. Chapter 3 The necessity of employing multicarrier methods in magnetotransport of narrow gap semiconductors is brought out. In these materials, mixed conduction is seen to exist at nearly all temperatures of interest. Methods of extracting two of the most important transport parameters of device interest, density and mobility, from the variable magnetic field Hall and magnetoresistance measurements are elaborated. Improvements have been made to the conventional non-linear least squares fitting procedure and are demonstrated. Chapter 4 Magnetotransport measurements in pulsed fields upto 15 Tesla have been performed on Mercury Cadmium Telluride (Hg1?xCdxTe, x?0.2) bulk as well as liquid phase epitaxially grown samples to obtain the resistivity and conductivity tensors in the temperature range 220K to 300 K. Mobilities and densities of various carriers participating in conduction have been extracted using both conventional multicarrier fitting (MCF) and Mobility Spectrum Analysis(MSA). The fits to experimental data, particularly at the highest magnetic fields, were substantially improved when MCF is applied to minimize errors simultaneously on both resistivity and conductivity tensors. The semiclassical Boltzmann Transport Equation (BTE) has been solved without using adjustable parameters by incorporating the following scattering mechanisms to fit the mobility: ionized impurity, polar and nonpolar optical phonon, acoustic deformation potential and alloy disorder. Compared to previous estimates based on the relaxation time approximation with out-scattering only, polar optical scattering and ionized impurity scattering limited mobilities are shown to be larger due to the correct incorporation of the in-scattering term taking into account the overlap integrals in the valence band. Chapter 5 Optical absorption measurements have been performed on bulk Mercury Cadmium Telluride (Hg1?xCdxTe, x?0.2) samples between 4K and 300 K. After fitting the Urbach part of the spectrum in the mid-infrared, below bandgap absorption is modeled using only basic processes and mechanisms, i.e. intervalence transitions and free carrier absorption (FCA). The additive FCA coefficients for individual carriers have been calculated using known quantum mechanically derived expressions for scattering due to polar and nonpolar optical phonons, ionized impurities and acoustic deformation potential mechanisms found to be relevant for electrical transport in this temperature range. The densities of carriers used in the calculations are derived from a modified multicarrier fitting (MCF) procedure on both resistivity and conductivity tensors from magnetotransport measurements in pulsed fields upto 15 Tesla from 220K to 300 K, thus making hole density more reliable. It is found that such a treatment is sufficient to model the absorption spectra below bandgap quite accurately without introducing any additional mechanical or compositional defect related phenomena. Chapter 6 A summary of the work carried out in this thesis is presented. Some future directions including preliminary work to measure carrier mobilities at high electric fields and effect of hydrogen passivation in MCT are briefly discussed.

Perovskite rare-earth manganites of the form R1-xAxMnO3 (R – rare earth ion or Bi, A – Ca,Sr) have drawn an overwhelming research interest during the last few years owing to their extraordinary physical properties. Some of the interesting phenomena exhibited by the manganites are (a) colossal magneotresistance (CMR) (b) charge, orbital and spin ordering and (c) phase separation at nano and micron scale. The manganites are strongly correlated systems in which the charge, spin and orbital degrees of freedom are coupled. The properties of these materials are sensitive functions of external stimuli such as the doping, temperature and pressure [1-5] and have been extensively studied both experimentally and theoretically on single crystal, bulk polycrystalline and thin film forms of the samples [6-9]. Recently attention has been drawn towards the properties of nanoscale manganites. The nanoscale materials are expected to behave quite differently from extended solids due to quantum confinement effects and high surface/volume ratio. Nanoscale CMR manganites have been fabricated using diverse methods in the form of particles, wires, tubes and various other forms by different groups. It has been shown that the properties of CMR manganites can be tuned by reducing the particle size down to nanometer range and by changing the morphology [10-14]. The physical properties of antiferromagnetic insulating charge ordered manganites have been well investigated by using numerous experimental techniques on bulk solids. It is known that the charge ordered (CO) phase is ‘melted’ resulting in a ferromagnetic, metallic phase on application of high magnetic fields, electric fields, impurity ion doping, high energetic ion irradiation and by pressure [15-17]. However, no attempts have been made on the fabrication and the physical property investigations on nanoscale charge ordered manganites. Hence, we have undertaken to study the properties of charge ordered manganites prepared at nanoscale using various experimental probes. In this thesis we present the results on magnetization, magnetotransport and Electron Magnetic Resonance (EMR) (electron paramagnetic resonance in the paramagnetic phase and ferromagnetic resonance in the ferromagnetic phase) studies of the following nanoscale compounds and compare the properties with those of their bulk counterparts; (a) highly robust antiferromagnetic insulating CE –type charge ordered manganite Pr0.5Ca0.5MnO3 (PCMO) (b) highly robust antiferromagnetic insulating CE- type charge ordered manganite Nd0.5Ca0.5MnO3 (NCMO) (c) moderately robust A-type charge ordered manganite Pr0.5Sr0.5MnO3 (PSMO) (d) highly robust insulating anti-ferromagnetic charge ordered manganites Bi0.5Ca0.5MnO3 (BCMO) and Bi0.5Sr0.5MnO3 (BSMO) and (e) a CMR manganite Pr0.7Pb0.3MnO3 (PPMO). Chapter 1 of the thesis contains a brief introduction to the general features of manganites describing various interesting phenomena and the interactions underlying them. Further, we have written a detailed review on the properties of nanometric CMR manganites of various sizes and shapes. In this chapter, we have also described the experimental methodology and the analysis procedure adopted in this work Chapter 2 reports the fabrication of nanowires and nanoparticles of Pr0.5Ca0.5MnO3 (PCMO) and the results obtained from magnetization, magnetotransport and electron magnetic resonance measurements performed on nanoscale PCMO along with their comparison with those of the bulk sample. Here, the nanowires of PCMO were prepared by hydrothermal method and the nanoparticles of mean sizes 10, 20 and 40 nm were prepared by polymer assisted sol-gel method. Solid state reaction method was used to prepare the micron sized PCMO bulk material. Different techniques like XRD, TEM, EDAX and ICPAES have been used to characterize the samples. The novel result of the present investigation is the weakening of charge order and switch over from the anti-ferromagnetic phase to ferromagnetic phase in PCMO nanowires [18]. In addition, the charge order is seem to have completely suppressed in 10 nm PCMO nanoparticles as observed from the magnetization measurements. These results are particularly very significant as one needs magnetic fields of ~ 27 T to melt the charge ordered phase in PCMO. Size induced insulator-metal transition TM-I is observed in nanoscale PCMO at low temperatures accompanied by ferromagnetism. CMR of 99.7% is obtained at TM-I and at a field of 11 T. EMR studies have confirmed the presence of ferromagnetic phase at low temperatures. Temperature dependent EMR line width and intensity have shown the presence of CO phase in PCMO10 though static magnetization measurements have shown the absence of CO phase. It is found that the EMR linewidth increases with the decrease of particle size. Chapter 3 reports the fabrication of nanoparticles of Nd0.5Ca0.5MnO3 (NCMO) and the results obtained from magnetization, magnetotransport and electron magnetic resonance measurements performed on nanoscale NCMO along with their comparison with those of bulk NCMO. The nanoparticles of NCMO of mean sizes 5, 20 and 40 nm were prepared by polymer assisted sol-gel method. Solid state reaction method was used to prepare the micron sized NCMO bulk material. Different techniques like XRD, TEM, EDAX and ICPAES have been used to characterize the samples. A striking result of this particular investigation is the complete suppression of charge ordered phase in 5 and 20 nm NCMO nanoparticles as observed from the magnetization measurements [19]. Size induced insulator-metal transition TM-I is observed in nanoscale NCMO at low temperatures accompanied by ferromagnetism in accordance with Zener double exchange meachanism. CMR of 99.7% is obtained at TM-I and at a field of 11 T. EMR studies have confirmed the presence of ferromagnetic phase at low temperatures. Temperature dependent EMR line width and intensity have shown the presence of residual CO fluctuations in NCMO5 though the static magnetization measurements have shown the absence of CO phase. It is found that the EMR linewidth increases with the decrease of particle size. Low temperature X-ray diffraction measurements on NCMO20 indicate the absence of CO phase. But the preliminary results obtained from the optical spectroscopy measurements indicate the evidence for the presence of CO phase. In Chapter 4, we report the investigations on the nanoscale PSMO. PSMO nanoparticles of sizes 20, 40 and 60 nm are prepared by polymer precursor sol-gel method. PSMO nanowires of diameter 50 nm and lengths of a few microns have been prepared by hydrothermal method. The bulk polycrystalline PSMO is obtained by crushing the single crystal of the same prepared by float zone method. Various techniques like XRD, TEM, VSM, transport measurements and EMR spectroscopy have been employed to characterize and to study the size dependent magnetic, transport and electron magnetic resonance properties and to compare them with those of the bulk. Our results show that there is a disappearance of anti-ferromagnetic charge ordering phase and the appearance of a ferromagnetic phase at low temperatures in all PSMO nanoparticles and nanowires. Metal like behaviour is observed in the size induced ferromagnetic phase in nanoparticles. The EMR linewidth increases with the decrease of particle size. A comparison with the properties of the bulk material shows that the ferromagnetic transition at 265 K remains unaffected but the anti-ferromagnetic transition at TN = 150 K disappears in the nanoparticles. Further, the temperature dependence of magnetic anisotropy shows a complex behaviour, being higher in the nanoparticles at high temperatures, lower at lower temperatures in comparison with the bulk [20]. In Chapter 5, we present the fabrication, characterization and the results obtained from the magnetization and EMR measurements carried out on BCMO and BSMO nanoparticles and compare the results with those of the bulk. X-ray diffraction gives evidence for single phasic nature of the materials as well as their structures. Mono-dispersed to a large extent, isolated nanoparticles are seen in the transmission electron micrographs. High resolution electron microscopy shows the crystalline nature of the nanoparticles. Superconducting quantum interferometer based magnetic measurements from 10 K to 300 K show that these nanomanganites retain the charge ordering nature unlike the Pr and Nd based nanomanganites. The CO in Bi based manganites is thus found to be very robust consistent with the observation that magnetic fields of the order of 130 T are necessary to melt the CO in these compounds. These results are supported by electron magnetic resonance measurements [21]. In Chapter 6, we present our results on the effect of particle size on the magnetic properties of Pr0.7Pb0.3MnO3 (PPMO). PPMO nanoparticles of two different sizes (~5 nm and 30 nm) were prepared by the polymeric precursor sol-gel method. The samples are characterized by different techniques like XRD, TEM, SQUID magnetometry, EMR and optical spectroscopic measurements. It is found that the nanoparticles crystallize in the cubic perovskite structure. TEM measurements show that the 5 nm particles are uniform in size. They are also crystalline as seen by HREM and XRD measurements. SQUID magnetometry measurements have shown that the Curie temperature increases (from 220 K to 235 K) with the increase of particle size. Saturation magnetization is higher for the smaller particles studied. We have observed only one EMR signal down to 4 K in both the nanoparticles (5 and 30 nm) in contrast to the two EMR signal behaviour observed in bulk PPMO [22]. It is found that the EMR linewidth increases with the decrease of particle size in the paramagnetic phase. Temperature dependent optical spectroscopy measurements performed on 5 nm PPMO nanoparticles indicate that the insulator-metal transition temperature TM-I = 230 K, is not very different from TM-I = 235 K of the bulk sample [23] The thesis concludes with a brief writeup summarizing the results and pointing out possible future directions of research in the area.

Ce travail de cette thèse présente les études sur l'influence du nouveau dégrée de liberté quantique, causé par le couplage tunnel entre les couches, sur les propriétés de transport des multi-puits quantiques dans un champ magnétique, à basse température, et sous irradiation micro-ondes. De nouvelles oscillations de résistance sont observées dans les systèmes d’électrons bi- et multicouches. Elles résultent d'une interférence entre les oscillations entre les sous-bandes et les oscillations induites par les micro-ondes. Des états à résistance nulle apparaissent lorsque les systèmes bicouches de haute qualité sous irradiation micro-ondes même en présence d’une diffusion additionnelle. Le mécanisme inélastique de la photorésistance est la contribution dominante à basses températures et sous un champ électronique modéré. Ce modèle confirme l'intégrité des estimations théoriques pour le temps de relaxation inélastique et mène à une explication satisfaisante de la photorésistance dans les systèmes d’électrons bi-et multicouches. Dans un champ magnétique intense, la suppression de l’effet tunnel entre les couches provoque des nouveaux états corrélés à cause d’une interaction électron-électron entre les différentes couches. Dans cette thèse, les systèmes électroniques tricouches, formés par de triples puits quantiques révèlent de nouveaux états de l’effet Hall Quantique fractionnaire si l’effet tunnel est supprimé par une composante parallèle du champ magnétique aux très basses températures (mK). / This work is devoted to the investigation of the influence of the additional quantum degree of freedom caused by tunnel coupling on transport properties of multilayer electron systems in magnetic fields, at low temperatures and under microwave excitation. Microwave-induced resistance oscillations in bi- and multilayer electron systems are the consequence of an interference of magneto-intersubband and microwave-induced resistance oscillations which leads to peculiar oscillations in magnetoresistance. High-quality bilayer systems exposed to microwave irradiation exhibit zero-resistance states even in the presence of intersubband scattering. The inelastic mechanism of microwave photoresistance is found to be the dominant contribution at low temperatures and moderate microwave electric field. This model confirms the reliability of theoretical estimates for the inelastic relaxation time and leads to a satisfactory explanation of photoresistance in bi- and multilayer electron systems. In high magnetic fields, the suppression of tunnelling between layers causes new correlated states owing to electron-electron interaction in neighboured layers. In this thesis, trilayer electron systems formed by triple quantum wells reveal new fractional quantum Hall states if tunnelling is suppressed by a parallel component of the magnetic field at mK temperatures.

No description available.

We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.

We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.

Manipulation of ferromagnetic (FM) spins (and spin textures) using an antiferromagnet (AFM) as an active element in exchange coupled AFM/FM heterostructures is a promising branch of spintronics. Recent ground-breaking experimental demonstrations, such as electrical manipulation of the interfacial exchange coupling and FM spins, as well as ultrafast control of the interfacial exchange-coupling torque in AFM/FM heterostructures, have paved the way towards ultrafast spintronic devices for data storage and neuromorphic computing device applications.[5,6] To achieve electrical manipulation of FM spins, AFMs offer an efficient alternative to passive heavy metal electrodes (e.g., Pt, Pd, W, and Ta) for converting charge current to pure spin current. However, AFM thin films are often integrated into complex heterostructured thin film architectures resulting in chemical, structural, and magnetic disorder. The structural and magnetic disorder in AFM/FM-based spintronic devices can lead to highly undesirable properties, namely thermal dependence of the AFM anisotropy energy barrier, fluctuations in the magnetoresistance, non-linear operation, interfacial spin memory loss, extrinsic contributions to the effective magnetic damping in the adjacent FM, decrease in the effective spin Hall angle, atypical magnetotransport phenomena and distorted interfacial spin structure. Therefore, controlling the magnetic order down to the nanoscale in exchange coupled AFM/FM-based heterostructures is of fundamental importance. However, the impact of fractional variation in the magnetic order at the nanoscale on the magnetization reversal, magnetization dynamics, interfacial spin transport, and the interfacial domain structure of AFM/FM-based heterostructures remains a critical barrier. To address the aforementioned challenges, we conduct a comprehensive experimental investigation of chemical, structural, magnetization reversal (integral and element-specific), magnetization dynamics, and magnetotransport properties, combined with high-resolution magnetic imaging of the exchange coupled Ni3Fe/IrMn3-based heterostructures. Initially, we study the chemical, structural, electrical, and magnetic properties of epitaxially textured MgO(001)/IrMn3(0-35 nm)/Ni3Fe(15 nm)/Al2O3(2.0 nm) heterostructures. We reveal the impact of magnetic field annealing on the interdiffusion at the IrMn3/Ni3Fe interface, electrical resistivity, and magnetic properties of the heterostructures. We further present an AFM IrMn3 film thickness dependence of the exchange bias field, coercive field, magnetization reversal, and magnetization dynamics of the exchange coupled heterostructures. These experiments reveal a strong correlation between the chemical, structural and magnetic properties of the IrMn3-based heterostructures. We find a significant decrease in the spin-mixing conductance of the chemically-disordered IrMn3/Ni3Fe interface compared to the chemically-ordered counterpart. Independent of the AFM film thickness, we unveil that thermally disordered AFM grains exist in all the samples (measured up to 35-nm-thick IrMn3 films). We develop an iterative magnetic field cooling procedure to systematically manipulate the orientation of the thermally disordered and reversible AFM moments and thus, achieve tunable magnetic, and magnetotransport properties of exchange coupled AFM-based heterostructures. Subsequently, we investigate the impact of fractional variation in the AFM order on the magnetization reversal and magnetotransport properties of the epitaxially textured ɣ-phase IrMn3/Ni3Fe, Ni3Fe/IrMn3/Ni3Fe, and Ni3Fe/IrMn3/Ni3Fe/CoO heterostructures. We probe the element-specific (FM: Ni and Co, and AFM: Mn) magnetization reversal properties of the exchange coupled Ni3Fe/IrMn3/Ni3Fe/Co/CoO heterostructures in various magnetic field cooled states. We present a detailed procedure for separating the spin and orbital moment contributions for magnetic elements using the XMCD sum rule. We address whether Mauri-type domain walls can develop at the (polycrystalline) exchange coupled Ni3Fe/IrMn3/Ni3Fe interfaces. We further study the impact of magnetic field cooling on the AFM Mn (near L2,3-edges) X-ray absorption spectra. Finally, we employ a combination of in-field high-resolution magnetic force microscopy, magnetooptical Kerr effect magnetometry with micro-focused beam, and micromagnetic simulations to study the magnetic vortex structures in exchange coupled FM/AFM and AFM/FM/AFM disk structures. We examine the magnetic vortex annihilation mechanism mediated by the emergence and subsequent annihilation of the vortex-antivortex (V-AV) pairs in simple FM and exchange coupled FM/AFM as well as AFM/FM/AFM disk structures. We image the distorted magnetic vortex structures in exchange coupled FM/AFM disks proposed by Gilbert and coworkers. We further emphasize crucial magnetic vortex properties, such as handedness, effective vortex core radius, core displacement at remanence, nucleation field, annihilation field, and exchange bias field. Our experimental inquiry offers profound insight into the interfacial exchange interaction, magnetization reversal, magnetization dynamics, and interfacial spin transport of the AFM/FM-based heterostructures. Moreover, our results pave the way towards nanoscale control of the magnetic properties in AFM-based heterostructures and point towards future opportunities in the field of AFM spintronic devices.:1. Introduction 2. Magnetic Interactions and Exchange Bias Effect 3. Materials 4. Experimental Methods 5. Structural, Electrical, and Magnetization Reversal Properties of Epitaxially Textured ɣ-IrMn3/ Ni3Fe Heterostructures 6. Magnetization Dynamics of MgO(001)/IrMn3/Ni3Fe Heterostructures in the Frequency Domain 7. Tunable Magnetic and Magnetotransport Properties of MgO(001)/Ni3Fe/IrMn3/Ni3Fe/ CoO/Pt Heterostructures 8. Element-Specific XMCD Study of the Exchange Couple Ni3Fe/IrMn3/Ni3Fe/Co/CoO Heterostructures 9. Distorted Vortex Structure and Magnetic Vortex Reversal Processes in Exchange Coupled Ni3Fe/IrMn3 Disk Structures 10. Conclusions and Outlook Addendum Acronyms Symbols Publication List Author Information Acknowledgments Statement of Authorship

In dieser Arbeit werden das Wachstum mittels Molekularstrahlepitaxie und die Eigenschaften der Ferromagneten Fe und Fe_3Si auf niedrig-symmetirschen GaAs(113)A-Substraten studiert. Drei wichtige Aspekte werden untersucht: (i) Wachstum und strukturelle Charakterisierung, (ii) magnetische Eigenschaften und (iii) Magnetotransporteigenschaften der Fe und Fe_3Si Schichten auf GaAs(113)A-Substraten. Das Wachstum der Fe- und Fe_3Si-Schichten wurde bei einer Wachstumstemperatur von = bzw. 250 °C optimiert. Bei diesen Wachstumstemperaturen zeigen die Schichten eine hohe Kristallperfektion und glatte Grenz- und Oberflächen analog zu [001]-orientierten Schichten. Weiterhin wurde die Stabilität der Fe_(3+x)Si_(1-x) Phase über einen weiten Kompositionsbereich innerhalb der Fe_3Si-Stoichiometry demonstriert. Die Abhängigkeit der magnetischen Anisotropie innerhalb der Schichtebene von der Schichtdicke weist zwei Bereiche auf: einen Beresich mit dominanter uniaxialer Anisotropie für Fe-Schichten = 70 MLs. Weiterhin wird eine magnetische Anisotropie senkrecht zur Schichtebene in sehr dünnen Schichten gefunden. Der Grenzflächenbeitrag sowohl der uniaxialen als auch der senkrechten Anisotropiekonstanten, die aus der Dickenabhängigkeit bestimmt wurden, sind unabhängig von der [113]-Orientierung und eine inhärente Eigenschaft der Fe/GaAs-Grenzfläche. Die anisotrope Bindungskonfiguration zwischen den Fe und den As- oder Ga-Atomen an der Grenzfläche wird als Ursache für die uniaxiale magnetische Anisotropie betrachtet. Die magnetische Anisotropie der Fe_3Si-Schichten auf GaAs(113)A-Substraten zeigt ein komplexe Abhängigkeit von der Wachstumsbedingungen und der Komposition der Schichten. In den Magnetotransportuntersuchungen tritt sowohl in Fe(113)- als auch in Fe_3Si(113)-Schichten eine antisymmetrische Komponente (ASC) im planaren Hall-Effekt (PHE) auf. Ein phänomenologisches Modell, dass auf der Kristallsymmetrie basiert, liefert ein gute Beschreibung sowohl der ASC im PHE als auch des symmetrischen, anisotropen Magnetowiderstandes. Das Modell zeigt, dass die beobachtete ASC als Hall-Effekt zweiter Ordnung beschreiben werden kann. / In this work, the molecular-beam epitaxial growth and properties of ferromagnets, namely Fe and Fe_3Si are studied on low-symmetric GaAs(113)A substrates. Three important aspects are investigated: (i) growth and structural characterization, (ii) magnetic properties, and (iii) magnetotransport properties of Fe and Fe_3Si films on GaAs(113)A substrates. The growth of Fe and Fe_3Si films is optimized at growth temperatures of 0 and 250 degree Celsius, respectively, where the layers exhibit high crystal quality and a smooth interface/surface similar to the [001]-oriented films. The stability of Fe_(3+x)Si_(1-x) phase over a range of composition around the Fe_3Si stoichiometry is also demonstrated. The evolution of the in-plane magnetic anisotropy with film thickness exhibits two regions: a uniaxial magnetic anisotropy (UMA) for Fe film thicknesses = 70 MLs. The existence of an out-of-plane perpendicular magnetic anisotropy is also detected in ultrathin Fe films. The interfacial contribution of both the uniaxial and the perpendicular anisotropy constants, derived from the thickness-dependent study, are found to be independent of the [113] orientation and are hence an inherent property of the Fe/GaAs interface. The origin of the UMA is attributed to anisotropic bonding between Fe and As or Ga at the interface, similarly to Fe/GaAs(001). The magnetic anisotropy in Fe_3Si on GaAs(113)A exhibits a complex dependence on the growth conditions and composition. Magnetotransport measurements of both Fe(113) and Fe_3Si(113) films shows the striking appearance of an antisymmetric component (ASC) in the planar Hall effect (PHE). A phenomenological model based on the symmetry of the crystal provides a good explanation to both the ASC in the PHE as well as the symmetric anisotropic magnetoresistance. The model shows that the observed ASC component can be ascribed to a second-order Hall effect.