<p dir="ltr">Semiconductor technology has propelled human society into the information age, and that progress continues. Silicon CMOS device has been aggressively scaled down to 5 nm technology node. To further boost the on-state performance, MOS technology based on high-mobility channels such as III-V and Ge have been intensively studied. 3D structures such as FinFETs and gate-all-around (GAA) FETs are also applied to III-V and Ge to improve the electrostatic control of the channels for the ultimate scaling. </p><p><br></p><p dir="ltr">Traditional semiconductor device characterization techniques are inapplicable to devices created through these novel materials and device structures. This work applies various techniques to characterize a wide variety of semiconductor devices, in addition to presenting novel techniques studying the reliability of commercial off the shelf (COTS) products. Finally, the design of an ultra-low-power RF ASIC implementing wireless neural recording and stimulation, designed for cranial implantation, will be presented.</p>

Το αντικείμενο της παρούσας Διδακτορικής Διατριβής είναι η ανάπτυξη και ο χαρακτηρισμός προηγμένων υλικών για εφαρμογές σε νανοδιατάξεις. Στα πλαίσια αυτής, επικεντρωθήκαμε στην ανάπτυξη και μελέτη μαγνητικών και ημιαγωγικών λεπτών υμενίων που βασίζονται σε οξείδια παραδοσιακών μετάλλων και ημιαγωγών. Ο μαγνητικός και οπτικός χαρακτηρισμός των υλικών αυτών υπό τη μορφή της νανοδομής του λεπτού υμενίου, αποκαλύπτουν νέες ιδιότητες με εξαιρετικά μεγάλο τεχνολογικό ενδιαφέρον. Πιο συγκεκριμένα, έγινε καταρχήν ανάπτυξη πολυστρωματικών μαγνητικών υμενίων Ni/NiO, μονοστρωματικών ημιαγωγικών υμενίων Cu2O, CuO και NiO, όπως επίσης και μονοστρωματικών άμορφων μονωτικών υμενίων SiOx με ή και χωρίς ενσωματωμένες κβαντικές τελείες Si. Για κάθε σειρά υμενίων από τις κατηγορίες αυτές, έγινε μελέτη των μαγνητικών ή/και των οπτικών τους ιδιοτήτων. Τα υμένια Ni/NiO αναπτύχθηκαν σε διαφορετικά υποστρώματα με τη χρήση μιας μόνο κεφαλής magnetron sputtering και της μεθόδου της φυσικής οξείδωσης. Η διαστρωμάτωση του υλικού και η επαναληψιμότητα της μεθόδου αποδείχθηκαν εξαιρετικής ποιότητας. Για υμένια Ni/NiO με διαφορετικό πάχος στρώματος Ni έγινε εκτεταμένη μελέτη της εξάρτησης της μαγνήτισης και της ανισοτροπίας από τη θερμοκρασία. Βρέθηκε ότι τα υμένια με λεπτά στρώματα Ni εμφανίζουν τάση για κάθετη μαγνητική ανισοτροπία, η οποία προέρχεται από την υπολογίσιμη θετική ανισοτροπία επιφανείας που επιδεικνύουν αυτά. Τα ημιαγωγικά υμένια οξειδίων του Cu και του Νi αναπτύχθηκαν μετά από οξείδωση υμενίων των αντίστοιχων μεταβατικών μετάλλων. Τα άμορφα μονωτικά υμένια SiOx αναπτύχθηκαν με τη τεχνική της “reactive” ιοντοβολής. Στη συνέχεια, μέρος αυτών οξειδώθηκε πλήρως μετά από θέρμανση σε θερμοκρασία 950 οC και σε περιβάλλον αέρα, ενώ κάποια άλλα υποβλήθηκαν σε θερμική αποσύνθεση μετά από θέρμανση σε συνθήκες κενού στους 1000 οC. Με τη διαδικασία της θερμικής αποσύνθεσης, όπως αποδεικνύουν και οι εικόνες ηλεκτρονικής μικροσκοπίας, σχηματίζονται νανοκρύσταλλοι Si ενσωματωμένοι σε άμορφη μήτρα οξειδίου του Si. Για τα υμένια των οξειδίων του Cu και του Ni μελετήθηκαν με τη χρήση της φασματοσκοπίας UV-VIS τα φαινόμενα κβαντικού περιορισμού που παρουσιάζουν αυτά. Βρέθηκε ότι σε κάθε περίπτωση εμφανίζεται μετατόπιση της ακμής απορρόφησης προς μεγαλύτερες ενέργειες, καθώς το πάχος του υμενίου μειώνεται και γίνεται συγκρίσιμο με την εξιτονική ακτίνα Bohr του αντίστοιχου υλικού. Τα υμένια SiOx βρέθηκε ότι μετά από τη διαδικασία της θερμικής τους αποσύνθεσης παρουσιάζουν φωτοφωταύγεια, η οποία προέρχεται από τις εξιτονικές επανασυνδέσεις στις κβαντικές τελείες Si που εμπεριέχονται σ’ αυτά. Από την εργασία στα πλαίσια αυτής της Διατριβής, διαπιστώνουμε ότι μπορούμε να μεταβάλλουμε τις ιδιότητες παραδοσιακών υλικών, όπως είναι για παράδειγμα τα μέταλλα, οι κλασσικοί ημιαγωγοί και τα οξείδια αυτών, όταν αυτά αναπτύσσονται υπό τη μορφή νανοδομών. Οι νανοδομές αυτές μπορεί να εμφανίζουν εξαιρετικό ενδιαφέρον για εφαρμογές σε νανοδιατάξεις με καινούργιες αλλά κι εντελώς ελεγχόμενες ιδιότητες. / The objective of this Thesis is the growth and the characterization of high tech materials which can be possible candidates for future applications in nanodevices. In the framework of the Thesis, we were mainly focused on the production and the study of magnetic and semiconducting thin films, which are based on oxides of metals and of conventional semiconductors. The magnetic and optical characterizations reveal that these materials, in the form of thin films exhibit new properties with exceptionally large technological interest. In more detail, magnetic Ni/NiO multilayers, semiconducting Cu2O, CuO and NiO thin films, as well as insulating amorphous SiOx thin films with or without embedded Si quantum dots, were produced. The magnetic and/or optical properties of each of the aforementioned thin film categories were studied and their impact on possible future applications was examined. The Ni/NiO multilayers were produced on various substrates with the aid of a single magnetron sputtering head and the natural oxidation process. The produced multilayers were of excellent layering and interface quality. An extended study of both the magnetization and the anisotropy as a function of the temperature and the varying Ni layer thickness was performed. It is found from the magnetic investigations, that the multilayers with thin Ni layers exhibit a trend for perpendicular magnetic anisotropy, which is attributed to the considerable positive surface anisotropy of the Ni/NiO interfaces. The semiconducting copper and nickel oxide thin films were produced via the oxidation of the corresponding metallic films. The amorphous SiOx films were fabricated via the reactive sputtering method. Part of the as deposited films was fully oxidized at 950 oC under the ambient air environment, whereas another part was thermally decomposed under vacuum conditions at 1000 oC. Electron microscopy investigations reveal that upon the thermal decomposition process of the films, embedded Si nanocrystals are formed in the amorphous matrix of the Si oxide. The Cu and Ni oxide films exhibited quantum confinement effects, which were studied via the UV-VIS spectroscopy. The recorded spectra reveal that the absorption edge shifts towards higher energies, as the layer thickness is reduced and becomes comparable with the excitonic Bohr radius of the material. The Si oxide thin films, after the thermal decomposition treatment are found to exhibit photoluminescence at the region between 1.3 and 1.5 eV which is originated to the excitonic recombination in the embedded Si quantum dots. Finally, it is deduced that conventional materials like metals, semiconductors and the oxides of them, can exhibit new properties when they are prepared in the form of nanostructure. These nanostructures can attract a lot of interest for possible applications in nanodevices with new but completely controllable properties.

This thesis is concerned with the influence of nanoscale boundaries and interfaces upon the electronic processes that occur within both organic and inorganic semiconductors. Photoluminescent polymers, highly conducting polymers and nanoscale inorganic semiconductors have been investigated using state-of-the-art ultrafast optical techniques, to provide information on the sub-picosecond photoexcitation dynamics in these systems. The influence of dimensionality on the excitation transfer dynamics in a conjugated polymer blend is studied. Using time-resolved photoluminescence spectroscopy, the transfer transients both for a three-dimensional blend film, and for quasi-two-dimensional monolayers formed through intercalation of the polymer blend between the crystal planes of a SnS2 matrix have been measured. A comparison of the experimental data with a simple, dimensionality-dependent model is presented, based on point dipole electronic coupling between electronic transition moments. Within this approximation, the energy transfer dynamics are found to adopt a three-dimensional character in the solid film, and a two-dimensional nature in the monolayers present in the SnS2 -polymer nanocomposite. The time-resolved conductivity of isolated GaAs nanowires has been investigated by optical-pump terahertz-probe time-domain spectroscopy. The electronic response exhibits a pronounced surface plasmon mode that forms within 300 fs, before decaying within 10 ps as a result of charge trapping at the nanowire surface. The mobility has been extracted using the Drude model for a plasmon and is found to be remarkably high, being roughly one third of that typical for bulk GaAs at room-temperature and indicating the high quality and low bulk defect density in the nanowires studied. Finally, the time-resolved conductivity dynamics of photoexcited polymer-fullerene bulk heterojunction blends for two model polymers, P3HT and MDMO-PPV, blended with PCBM are presented. The observed terahertz-frequency conductivity is characteristic of dispersive charge transport for photoexcitation both at the π−π* absorption peak (560 nm for P3HT), and significantly below it (800 nm). The photoconductivity at 800 nm is unexpectedly high, which is attributed to the presence of a charge transfer complex. In addition, the excitation-fluence dependence of the photoconductivity is studied over more than four orders of magnitude. The time-averaged photoconductivity of the P3HT:PCBM blend is over 20 times larger than that of P3HT, indicating that long-lived positive polarons are responsible for the high photovoltaic efficiency of polymer:fullerene blends. At early times (~ ps) the linear dependence of photoconductivity upon fluence indicates that interfacial charge transfer dominates as an exciton decay pathway, generating charges with mobility of at least ~0.1cm2 V−1 s−1. At later times, a sub-linear relationship shows that carrier-carrier recombination effects influence the conductivity on a longer timescale (> 1 μs).

Les processus photocatalytiques à la surface d’oxydes métalliques semi-conducteurs font l’objet d’intensesrecherches au niveau mondial car ils constituent des alternatives efficaces, respectueuses de l’environnement etpeu coûteuses aux méthodes conventionnelles dans les domaines de la purification de l’eau et de l’air, et de laproduction « verte » d’hydrogène. Cependant, certaines limitations pour atteindre des efficacitésphotocatalytiques élevées ont été mises en évidence avec les matériaux semiconducteurs classiques du fait de larecombinaison rapide des porteurs de charge générés par illumination. Le développement de photocatalyseurs àbase d’héterostuctures obtenues par dépôt de métaux à la surface de matériaux semiconducteurs ou parassociation de deux semiconducteurs possédant des bandes d’énergie bien positionnées devrait permettre delimiter ces phénomènes de recombinaison via un transfert de charge vectoriel. Dans ce contexte, trois typesd’hétérostructures telles que des nanomatériaux à base d’hétérojonction semiconducteur n/semiconducteur n(SnO2/ZnO), metal/semiconducteur n (RuO2/TiO2 and RuO2/ZnO) et semiconducteur p/semiconducteur n(NiO/TiO2) ont été synthétisées avec succès par différentes voies liquides. Leur composition, leur texture, leurstructure et leur morphologie ont été caractérisées par spectroscopies FTIR et Raman, par diffraction des rayonsX, microscopie électronique en transmission (MET) et porosimétrie de sorption d’azote. Par ailleurs, unecombinaison judicieuse des données issues de mesures effectuées par spectroscopie UV-visible en réflexiondiffuse (DRS) et par spectroscopies de photoélectrons X (XPS) et UV (UPS) a permis de déterminer lediagramme d’énergie des bandes pour chaque système étudié. Les catalyseurs ainsi obtenus ont conduit à desefficacités photocatalytiques plus élevées qu’avec le dioxyde de titane P25 pour la dégradation de colorantsorganiques (bleu de méthylène, l’orangé de méthyle) et la production d’hydrogène. En particulier, lesnanocomposites RuO2/TiO2 et NiO/TiO2 contenant une quantité optimale de RuO2 (5 % en masse) et de NiO(1% en masse), respectivement, ont conduit aux efficacités photocatalytiques les plus importantes pour laproduction d’hydrogène. Ces excellentes performances photocatalytiques ont été interprétées en termesd’alignement adéquat des bandes d’énergies des matériaux associé à des propriétés texturales et structuralesfavorables. Ce concept de photocatalyseurs à base d’hétérojonctions semiconductrices d’activité élevée devrait àl’avenir trouver des débouchés industriels dans les domaines de l’élimination de l’environnement de composésorganiques indésirables et de la production « verte » d’hydrogène. / Photocatalytic processes over semiconducting oxide surfaces have attracted worldwide attention aspotentially efficient, environmentally friendly and low cost methods for water/air purification as well as forrenewable hydrogen production. However, some limitations to achieve high photocatalytic efficiencies havebeen found due to the fast recombination of the charge carriers. Development of heterostucture photocatalystsby depositing metals on the surface of semiconductors or by coupling two semiconductors with suitable bandedge position can reduce recombination phenomena by vectorial transfer of charge carriers. To draw newprospects in this domain, three different kinds of heterostructures such as n-type/n-type semiconductor(SnO2/ZnO), metal/n-type semiconductor (RuO2/TiO2 and RuO2/ZnO) and p-type/n-type semiconductor(NiO/TiO2) heterojunction nanomaterials were successfully prepared by solution process. Their composition,texture, structure and morphology were thoroughly characterized by FTIR, X-ray diffraction (XRD), Ramanspectroscopy, transmission electron microscopy (TEM) and N2 sorption measurements. On the other hand, asuitable combination of UV–visible diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy(XPS) and ultraviolet photoemission spectroscopy (UPS) data provided the energy band diagram for eachsystem. The as-prepared heterojunction photocatalysts showed higher photocatalytic efficiency than P25 TiO2for the degradation of organic dyes (i.e. methylene blue and methyl orange) and the production of hydrogen.Particularly, heterostructure RuO2/TiO2 and NiO/TiO2 nanocomposites with optimum loading of RuO2 (5 wt %)and NiO (1 wt %), respectively, yielded the highest photocatalytic activities for the production of hydrogen.These enhanced performances were rationalized in terms of suitable band alignment as evidenced by XPS/UPSmeasurements along with their good textural and structural properties. This concept of semiconductingheterojunction nanocatalysts with high photocatlytic activity should find industrial application in the future toremove undesirable organics from the environment and to produce renewable hydrogen.

Die vorliegende Arbeit präsentiert eine erste umfassende Wachstumsstudie, und erste quantitative Wachstumsmodelle, von Gruppe-III und IV Oxiden synthetisiert mit sauerstoffplasmaunterstützter Molekularstrahlepitaxie (MBE). Diese entwickelten Modelle beinhalten kinetische und thermodynamische Effekte. Die erworbenen Erkenntnisse sind auf fundamentale Wachstumsprozesse in anderen Syntheseverfahren übertragbar, wie zum Beispiel der Laserdeposition oder metallorganische Gasphasenepitaxie. Die Wachstumsraten und Desorptionsraten werden in-situ mit Laser-Reflektometrie bzw. Quadrupol-Massenspektrometrie (QMS) bestimmt. Es werden die transparenten halbleitenden Oxide Ga2O3, In2O3 und SnO2 untersucht. Es ist bekannt, dass sich das Wachstum von Gruppe-III und IV Oxiden, aufgrund der Existenz von Suboxiden, fundamental von anderen halbleitenden Materialien unterscheidet. Es stellt sich heraus, dass die Wachstumsrate der untersuchten binären Oxide durch die Formierung und Desorption von Suboxiden flussstöchiometrisch und thermisch limitiert ist. Es werden die Suboxide Ga2O für Ga2O3, In2O für In2O3 und SnO für SnO2 identifiziert. Ein Suboxid ist ein untergeordneter Oxidationszustand, und es wird gezeigt, dass die untersuchten Oxide über einen Zwei-Stufen-Prozess gebildet werden: vom Metall zum Suboxid, und weiterer Oxidation vom Suboxid zum thermodynamisch stabilen festen Metalloxid. Dieser Zwei-Stufen-Prozess ist die Basis für die Entwicklung eines ersten quantitativen, semiempirschen MBE-Wachstumsmodells für binare Oxide die Suboxide besitzen. Dieses Model beschreibt und erklärt die gemessenen Wachstumsraten und Desorptionsraten. Es wird die Kinetik und Thermodynamik des ternären Oxidsystems (InxGa1−x)2O3 untersucht. Die gemittelten Einbauraten von In und Ga in ein makroskopisches Volumen von (InxGa1−x)2O3 Dünnschichten werden ex-situ mit energiedispersiver Röntgenspektroskopie gemessen. Diese Einbauraten werden systematisch analysiert und im Rahmen kinetischer und thermodynamischer Grenzen beschrieben. Es wird gezeigt, dass Ga den In-Einbau in (InxGa1−x)2O3 aufgrund seiner stabileren Ga–O Bindungen thermodynamisch verhindert. In diesen Zusammenhang wird ein neuer katalytisch-tensidischer Effekt des In auf den Einbau von Ga gefunden. Eine Folge dieses katalytisch-tensidischen Effektes ist die Formierung der thermodynamisch, metastabilen hexagonalen Ga2O3 phase mit sehr hoher Kristallqualität. Ein thermodynamisch induziertes, kinetisches Wachstumsmodel für (InxGa1−x)2O3 wird entwickelt, mit dem sich alle makroskopischen Metall-Einbauraten und Desorptionsraten vorhersagen lassen. Mögliche (InxGa1−x)2O3 Strukturen gewachsen mit MBE werden mittels Röntgenkristallographie bestimmt. Mit Hilfe der Röntgenstrukturanalyse wird ein erster makroskopischer Ansatz zur Bestimmung der mikroskopischen In Konzentration X in möglichen (InXGa1−X)2O3 Phasen hergeleitet. Es werden Löslichkeitsgrenzen von In bzw. Ga in monoklinem und kubischem (InXGa1−X)2O3 bestimmt. / The present thesis presents a first comprehensive growth investigation and first quantitative growth models of group-III and IV oxides synthesized by oxygen plasma-assisted molecular beam epitaxy (MBE). The developed models include kinetic and thermodynamic effects. The obtained findings are generally valid for fundamental growth processes in other growth techniques, such as pulsed laser deposition and metal-organic vapor phase-epitaxy. The growth rates and desorption rates are measured in-situ by laser reflectometry and quadrupole mass spectrometry (QMS), respectively. The binary transparent semiconducting oxides Ga2O3, In2O3, and SnO2 are investigated. It is known that the growth of group-III and IV oxides is fundamentally different as compared to other semiconductor compounds and due to the existence of suboxides. It is found that the growth rate of the binary oxides investigated is flux-stoichiometrically and thermally limited by the formation and desorption of their respective suboxide. These suboxides are identified as Ga2O for Ga2O3, In2O for In2O3, and SnO for SnO2. A suboxide is a lower oxidation state, and it is shown, that the investigated oxides grow via a two-step oxidation process. That means, all metal oxidizes to the suboxide, and the suboxide can be further oxidized to the thermodynamic stable solid metal-oxide. This two-step oxidation process is the basis for the development of a first quantitative semi-empirical MBE growth model which predicts and explains the measured growth rates and desorption rates, for binary oxides possessing suboxides. The kinetics and thermodynamics of the ternary oxide system (InxGa1−x)2O3, grown by MBE, is investigated. The average In and Ga incorporation rates into a macroscopic volume of (InxGa1−x)2O3 are measured ex-situ by energy dispersive X-ray spectroscopy. These incorporation rates are systematically analyzed and explained in the framework of kinetic and thermodynamic limitations. It is shown that Ga thermodynamically inhibits the incorporation of In into (InxGa1−x)2O3 due to its stronger Ga–O bonds. In this context, a new catalytic-surfactant effect of In on the formation of Ga2O3 is found. As a consequence of this catalytic-surfactant effect the metastable hexagonal Ga2O3 with very high crystal quality is formed. A thermodynamically induced kinetic growth model for (InxGa1−x)2O3 MBE is developed. It predicts all macroscopic metal incorporation rates and desorption rates. Possible (InxGa1−x)2O3 phases grown by MBE are investigated by X-ray crystallography. By means of X-ray diffraction analysis, a first macroscopic approach to determine the microscopic In concentration X in possible (InXGa1−X)2O3 phases is derived. The solubility limits of In and Ga in monoclinic and cubic (InXGa1−X)2O3 phases, respectively, are identified.

Esta tese de doutorado é o resultado de um estudo dos mecanismos de operação de dispositivos poliméricos emissores de luz, com um particular enfoque nos processos de injeção e transporte de portadores de carga em polímeros derivados do poli(p-fenileno vinileno), PPV. Para tanto, se fez necessário o domínio de todas as etapas de produção e caracterização, desde a síntese química dos polímeros até a fabricação propriamente dita dos dispositivos, as quais são brevemente descritas neste trabalho. Basicamente, dois tipos diferentes de dispositivos foram caracterizados: diodos poliméricos emissores de luz (PLEDs), nos quais a camada ativa é composta por um filme fino (100-500 nm de espessura) do polímero eletroluminescente puro, e células eletroquímicas emissoras de luz (LECs), compostas por blendas do polímero conjugado com um eletrólito polimérico condutor iônico. As propriedades ópticas dos dispositivos foram analisadas através dos espectros de absorção óptica na região do ultravioleta/visível e de emissão (foto e eletroluminescência) enquanto as propriedades de injeção e de transporte de carga foram exploradas através de medidas elétricas de corrente-voltagem (I-V), espectroscopia de impedância no domínio da freqüência (condutividade ac), espectroscopia de fotocorrente e ressonância magnética detectada eletricamente (EDMR). A influência de parâmetros como a estrutura dos dispositivos, os metais utilizados como eletrodos e a temperatura permitiram uma análise mais detalhada de alguns modelos teóricos utilizados na interpretação dos resultados experimentais, fornecendo, dessa forma, um maior conhecimento das propriedades físicas dos materiais estudados. / This PhD thesis is an extensive study of the operation mechanisms of polymeric light-emitting devices, with a particular focus on the injection and transport properties of charge-carriers in poly(p-phenylene vinylene), PPV, derivatives. Therefore, it was necessary to dominate all the processes of fabrication and characterization of such devices, from the chemical synthesis of the polymers to the device fabrication, which are briefly described along this work. Two different kinds of devices were studied: polymeric ligh-emitting diodes (PLEDs) composed by a single thin layer (100-500 nm thick) of the pure electroluminescent polymer, and light-emitting electrochemical cells (LECs), which active layers are formed by a blend of the conjugated polymer and an ionic conductive polymeric electrolyte. The optical properties of the devices were analyzed by optical absorption in the ultraviolet-visible range and emission (photo- and electroluminescence) spectra. The charge injection and transport properties were studied by electrical measurements like current-voltage (I-V) curves, impedance spectroscopy in the frequency domain (ac conductivity), photocurrent spectroscopy and electrically detected magnetic resonance (EDMR). The influence of parameters like the device structure, the electrodes work function and the temperature allowed a detailed analysis of some theoretical models commonly used in the interpretation of the experimental results, providing more information about the physical properties of the studied conjugated polymers.

Mon travail de thèse porte sur l’assemblage supramoléculaire et le transport de charge des multi-composants utilisés dans le domaine de l’électronique à base organique. En particulier, l’étude et l’optimisation des transistors organiques à effet de champ (OFETs), des phototransistors, et des inverseurs organiques. Nous avons démontré que la température de recuit des dispositifs OFETs améliore les performances électriques d’un dérivé de fullerène (ICBA). Ces dispositifs dont les surfaces de SiO2 sont fonctionnalisées par OTS ou HMDS ont montrés des mobilités d’électrons de 0.1cm2V-1s-1, qui est la plus élevée par rapport à la littérature. Aussi, nous avons fabriqué des phototransistors à base de mono- et multifibres de PDIF-CN2 qui ont été optimisés par traitements de surfaces du diélectrique (HMDS ou OTS). Les propriétés optoélectroniques de ces dispositifs ont été comparées à ceux des dispositifs à base des couches minces déposés par spin-coating (éduction centrifuge). Nos dispositifs mono-fibres ont montré des valeurs de mobilité plus élevées (supérieure à 2 cm2V-1s-1) par rapport à ceux des multifibres et couches minces. Une telle efficacité de transport d’électrons est le résultat d’une cristallinité très élevée des fibres, qui permet une collecte efficace des excitons photo-générés qui se traduit par la plus haute sensibilité à la lumière (R) et photosensibilité (P) rapportées pour les phototransistors à base de mono-fibre supérieure à 2 × 103 AW-1, et 5 × 103 AW-1. Enfin, un polymère ambipolaire (DPPT-TT) a été utilisé lors de la fabrication de nouveaux dispositifs multifonctionnels par l’addition des molécules diaryléthènes (DAE_tBu et ou DAE_F), dont les propriétés électriques sont contrôlées par la lumière. Cette approche a permis un contrôle optique de gain en tension des inverseurs organiques, ces dispositifs multi-composants sont caractérisés par des gain en tensions très élevées (jusqu’au 504) comparés à ceux reportés dans la littérature (86). Ces travaux réalisés durant cette thèse offrent de nouvelles perspectives dans le domaine de l’optoélectronique et la conception des mémoires optiques. / This thesis is focused on the investigation of supramolecular assemblies and the charge carriers transport across organic single, bi- and three-component materials, used as the active layer in organic field-effect transistors (OFET), phototransistors (OPT) and complementary inverters. We demonstrated that thermal annealing and duration has high impact in OFET performances based on a fullerene derivative called ICBA. The devices electron mobility enhanced upon HMDS and OTS treated SiO2 surface and reached 0.1 cm2V-1s-1, which is the highest reported value in literature. We have provided evidence for the influence of the order at the supramolecular level in the semiconducting material (PDIF-CN2) on the performance of OPTs. We compared solution processed single crystalline PDIF-CN2 fibers and multifiber assemblies with spin-coated thin films, which revealed that the former exhibited good electron mobility up to 2 cm2s-1V-1. The improved fiber crystallinity allows efficient collection of photogenerated excitons, results in the highest reported responsivity R (>5 × 103 AW-1), and photoswitching ratio P (>2 × 103), which are to date the highest reported in literature for PDI-single crystal OPTs. Finally, we have performed for the first time new multifunctional devices combining an ambipolar polymer (DPPT-TT) with inserted diarylethene molecules in its matrix. The fabricated OFET and organic complementary inverters were optically controlled. The resultant inverters gain values are tuned by ultraviolet and visible light irradiation, reaching 504, which is higher than those reported in literature (86). These findings qualify them as promising potential candidates for the construction of high-performance integrated logic circuits and memory chips.

Today there is a great deal of interest in the development of gas sensors for various applications like monitoring of toxic gases, detection in oil reservoirs, mines, homes etc. Solid-state gas sensors have many advantages over the conventional analytical methods and hence are widely used. Amongst them, semiconducting metal-oxides based sensors are popular due to many advantages like low cost, small size, high sensitivity and long life. The present thesis reports a detailed work of TiO2 (Titania) thin film fabrication based on sol-gel method, study of their crystallization behavior and surface morphology, and characterizing them for alcohol sensing properties Sol-gel method is a wet chemical technique with many advantages over the conventional methods and offers a high degree of versatility to modify the film properties. Titania thin films were made with titanium isopropoxide as the precursor and ethanol and isopropanol as the solvents. Also effect of surfactants(PEG and CTAB) on the sol properties and film properties have experimentally examined. A in-house gas sensor testing setup has been designed and fabricated to characterize the sensors. Sensors with three different electrode configurations and also two different electrode material have been tested. The electrode geometry and material play a significant role on the sensing behavior and results for the same have been discussed.

Today there is a great deal of interest in the development of gas sensors for applications like air pollution monitoring, indoor environment control, detection of harmful gases in mines etc. Based on different sensing principles, a large variety of sensors such as semiconductor gas sensors, thermoelectric gas sensors, optical sensors and thermal conductivity sensors have been developed. The present thesis reports a detailed account of a novel method followed for the design and development of a thermoelectric gas sensor for sensing of Volatile Organic Compounds. Thermoelectric effect is one of the highly reliable and important working principles that is widely being put into practical applications. The thermoelectric property of semiconducting tin oxide film has been utilized in the sensor that has been developed. The thermoelectric property of semiconducting tin oxide film has been utilized in the sensor. The deposition parameters for sputtering of tin oxide film have been optimized to obtain a high seebeck coefficient. A test set-up to characterize the deposited films for their thermoelectric property has been designed and developed. A novel method of increasing the seebeck coefficient of tin oxide films has been successfully implemented. Thin films of chromium, copper and silver were used for this purpose. Deposition of the semiconducting oxide on strips of metal films has led to a noticeable increase in the seebeck coefficient of the oxide film without significantly affecting its thermal conductivity. The next part of our work involved development of a gas sensor using this thermoelectric film. These sensors were further tested for their response to volatile organic compounds. The sensor showed significant sensitivity to the test gases at relatively low temperatures. In addition to this, the developed sensor is also selective to acetone gas.

The thesis consists of eight chapters of which the first chapter presents a brief overview of inorganic nanostructures. Synthesis and magnetic properties of MnO and NiO nanocrystals are described in Chapter 2, with emphasis on the low-temperature ferromagnetic interactions in these antiferromagnetic oxides. Chapter 3 deals with the synthesis and characterizations of nanocrystals of ReO3, RuO2 and IrO2 which are oxides with metallic properties. Pressure-induced phase transitions of ReO3 nanocrystals and the use of the nanocrystals for carrying out surface-enhanced Raman spectroscopy of the molecules form Chapter 4. Use of ionic liquids to synthesize different nanostructures of semiconducting metal sulfides and selenides is described in Chapter 5. Synthesis of Mn-doped GaN nanocrystals and their magnetic properties are described in Chapter 6. A detailed investigation has been carried out on the growth kinetics of nanostructures of a few inorganic materials by using small-angle X-ray scattering and other techniques (Chapter 7). The study includes the growth kinetics of nanocrystals of Au, CdS and CdSe as well as of nanorods of ZnO. Results of a synchrotron X-ray study of the formation of nanocrystalline gold films at the organic-aqueous interface are also included in this chapter. Chapter 8 discuses the use of the organic-aqueous interface to generate Janus nanocrystalline films of inorganic materials where one side of the film is hydrophobic and other side is hydrophilic. This chapter also includes the formation of nanostructured peptide fibrils at the organic-aqueous interface and their use as templates to prepare inorganic nanotubes.