Spelling suggestions: "subject:"sich""
391 |
Design and Assessment of a Grid Connected Industrial Full-SiC Converter for 690 V GridsFuentes Castro, Carlos Daniel 20 May 2022 (has links)
Die Bedeutung von Leistungshalbleitern mit großem Bandabstand (Wide Band Gap, WBG) nahm in den letzten drei Jahrzehnten kontinuierlich zu. Diese Bauelemente haben das Potenzial, Silizium (Si) - Bauelemente in bestimmten Anwendungen sowie Leistungs- und Frequenzbereichen zu ersetzen. Siliziumkarbid (SiC)-Leistungshalbleiter sind die gegenwärtig am Weitesten entwickelten WBG-Leistungshalbleiter. Dank besonderer Materialeigenschaften zeichnen sich SiC-Leistungshalbleiter im Vergleich zu Si-Bauelementen durch einen geringeren spezifischen Widerstand, eine höhere Schaltgeschwindigkeit, geringere schaltverluste sowie eine höhere maximale Sperrschichttemperatur aus.
Die deutlich erhöhten Herstellungskosten limitieren den Einsatz von SiC-Leistungshalbleitern auf Anwendungen, in denen die Vorteile dieser Bauelemente die höheren Kosten überkompensieren und Systemvorteile ermöglichen. Heute werden SiC-Leistungshalbleiter z.B. in Solarwechselrichtern oder in Elektrofahrzeugen verwendet. Für Stromrichter industrieller elektrischer Antriebe ist die Kosten-Nutzen-Bilanz des Einsatzes von SiC-Leistungshalbleitern gegenwärtig nicht bekannt. Diese Fragestellung motiviert diese Arbeit. Die Auslegung sowie die daraus resultierenden Vor- und Nachteile eines Stromrichters mit SiC-Leistungshalbleitern für elektrische Industrieantriebe ist der Untersuchungsgegenstand dieser Arbeit.
Zu diesem Zweck wurde unter Einhaltung industrieller Auslegungskriterien ein 240 kVA SiC-basierter Stromrichterdemonstrator als aktiver Gleichrichter am dreiphasigen 690 V Niederspannungsnetz untersucht. Auf der Basis einer Stromrichterauslegung für SiC- und Si-Leistungshalbleiter wurde ein theoretischer Vergleich von Kosten, Effizienz, Größe und Gewicht durchgeführt. Die Arbeit stellt zunächst den Stand der Technik für SiC-Leistungshalbleiter dar. Anschließend wird ein geeignetes SiC-MOSFET Module für den industriellen Stromrichter ausgewählt und bezüglich des Schaltverhaltens sowie der Parallelschaltung charakterisiert. Der Auslegung des Stromrichterleistungsteils liegen industrielle Anforderungen zu Grunde. Ein realisierter Demonstrator für einen netzseitigen Stromrichter (Active Front End) ist durch eine symmetrische Parallelschaltung von zwei SiC-Modulen, geeignete Ansteuerschaltungen (Gate Drive Units), eine niedrige Streuinduktivität im Kommutierungskreis sowie ein LCL-Filter mit Standard-Kernmaterialien gekennzeichnet. Der Stromrichtervergleich zeigt, dass der betrachtete Stromrichter mit SiC-Leistungshalbleitern im gesamten Betriebsbereich geringere Verluste verursacht als ein vergleichbarer Stromrichter mit Si-Leistungshalbleitern. Der SiC - basierte Stromichter ermöglicht auch eine deutliche Gewichtsreduktion bei ca. 89% der Systemkosten. Somit stellen SiC-Leistungshalbleiter eine attraktive technische Lösung für die untersuchte Anwendung eines aktiven Gleichrichters für industrielle elektrische Antriebe dar. / Wide bandgap (WBG) power semiconductors have drawn steadily increasing interest in power electronics in the last three decades. These devices have shown the potential of replacing silicon as the default semiconductor solution for several applications in determined power and frequency ranges. Among them the most mature WBG semiconductor material is silicon carbide (SiC), which presents several characteristics at the crystal level that translate in the potential of presenting lower resistivity, be able to switch faster with lower switching loss, and present both higher characteristics to tolerate and dissipate heat when com pared with silicon. However, the same characteristics that make it great also present a different set of drawbacks to be considered, which aligned with its increased cost make it challenging to assess if its advantages are justified for a particular application. Applications that highly value efficiency and/or power density are the most benefited, and converter solutions featuring the technology have already breached into these application markets. However in other applica tions, the line from which silicon carbide starts making sense in the cost/benefits/drawbacks balance is not clear. This is typically the case of industrial applications, which were the main focus and motivation of this work.
Hence, in this work the main goal has been to determine the basic characteristics, advantages and limitations that SiC technology designs for industrial low voltage high power grid connected converters present. To that end, a 690 V,
240 kVA SiC-based grid-tied converter demonstrator following industrial design criteria has been developed. Then, based on this design procedure a theoretical comparison between a 690 V, 190 kVA SiC-based converter against a silicon-based converter designed for the same power output has been performed to compare them regarding cost, efficiency, size and weight. This work also comprises a thorough revision of the state of art of SiC devices, which led to the selection of the switching device. Additionally, a characterization of both single and parallel-connected operation of the semiconductor modules was performed, to determine the module characteristics and its suitability to build the SiC converter demonstrator.
Results show that the converter demonstrator operates as designed, proving that is possible with the corresponding precautions to achieve: a low inductive power loop, balanced parallel connection of SiC modules, adequate driving circuits for the parallel-connected modules and an adequate filtering solution in compliance with grid-codes based on standard core materials for the selected switching frequency. Finally, the theoretical comparison between the two designed power converters shows that, attained to the conditions of the comparison, the SiC converter solution presents efficiency gains over the whole operating range, while presenting substantial weight savings at 89% of the costs of the Si-IGBT design, presenting itself as the cost-effective solution for the presented application requirements under the given design constraints.
|
392 |
Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devicesPoller, Tilo 03 September 2014 (has links)
The knowledge about the reliability of power electronics is necessary for the design of converters. Especially for offshore applications it is essential
to know, which fatigue processes happen and how the lifetime can be estimated. Numerical simulation is an important tool for the development
of power electronic systems. This thesis analyse the thermal and thermal-mechanical behaviour of packages for power semiconductor devices with the help of simulations. One topic is the evaluation of different thermal models.
The main focus is on the description of the thermal cross-coupling between the devices and the influence to the lifetime estimation. The power module is a well established package for power semiconductor devices. It will be explained how the heating period of power cycles influences the failure mode of this package type. Additionally, it will evaluated how SiC devices and DAB substrates influence the power cycling capability. The press-pack is in focus for high power applications as the package short-circuits during an electrical failure without external auxiliary systems. However, the knowledge about
the power cycling behaviour is currently limited. With the help of simulations this behaviour will be analysed and possible weak points will be also
derived.
In the end of the work it will be discussed, how the lifetime can be estimated with help of FEM simulations. / Für die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht.
Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den
Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein-
flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung
kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen
wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet.
Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann.
|
393 |
Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic ApplicationsBalasubramanian Saraswathy, Rishi January 2022 (has links)
The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. Because of the pillar structure below the p-base area, the depletion will occur both vertically and horizontally and keeps the electric field distribution throughout the drift layer constant. The Super Junction Metal-Oxide Semiconductor Field-Effect Transistor (SJ MOSFET) has a good advantage compared to DMOSFETs. Due to its capacity to tolerate higher breakdown voltages and the fact that it does not require an increase in cell pitch to reach higher voltages, the Super-Junction approach is now the subject of effective research as compared to IGBTs and DMOSFETs. Silicon Carbide , a material with a wide bandgap that facilitates high temperature operation, high blocking voltage, high current flow and high switching frequency, is used to construct the device. In order to maintain a consistent electric field throughout the device, the concentration of the n and p pillars was chosen with a good charge balance between them. The outcomes of designing and simulating a DMOSFET, a Semi-SJ MOSFET, and a Full SJ MOSFET are compared in this research. The semi SJ device resulted in a Ron of 18.4 mΩcm2 and a Vb of 4.1 kV. The full SJ device reached a Ron of 12.4 mΩcm2 and a breakdown voltage of 4.2 kV. One optimized device was chosen from the semi SJ devices and used in several TCAD simulations, and the outcomes were evaluated based on the JFET width, pillar thickness, and charge imbalance between the p and n pillars. In this study, the device was also modelled for 6.5 kV and 10 kV SiC blocking voltage capabilities; the findings are also discussed. / Denna uppsats fokuserar på att utveckla och karakterisera 3.3 kV kiselkarbidbaserade DMOSFET-transistorer med betydligt lägre framspänningsfall jämfört med kommersiella halvledarkomponenter. Framspänningsfallet och spärrspänningen modifieras genom att använda en pelarliknande halvledarstruktur i drift regionen, dvs. en super-junction [SJ] struktur. På grund av pelarstrukturen under p-bas området, uppträder utarmningsområdet av laddningsbärare både vertikalt och horisontellt och ger ett konstant elektriskt fält genom drift-regionen. Super-junction transistorer har flera fördelar jämfört med komponenter i DMOSFET struktur. På grund av sin kapacitet att motstå högre spärrspänningar och genom att strukturen inte behöver en större enhetscellbredd för att nå högre spärrspänning, så är just nu super-junction strukturer i stort forskningsfokus jämfört med IGBT och DMOSFET komponenter. Kiselkarbid, ett material med ett brett bandgap, möjliggör komponenter för höga temperaturer, höga spärrspänningar, höga elektriska strömmar, samt höga växlingsfrekvenser, har använts för att bygga de undersökta komponenterna. För att generera ett konstant elektriskt fält över drift-regionen, så har dopningsnivåerna för n- och p- pelarna valts för att hålla en bra laddningsbalans mellan dem. Simuleringsresultaten av dessa komponentstrukturer, DMOSFET, halv-SJ MOSFET, och hel-SJ MOSFET är jämförda i detta projekt. Halv-SJ MOSFET transistorn resulterade i ett framspänningsfall på 18.4 mΩcm2 och når en spärrspänning av 4.1 kV. Hel-SJ MOSFET strukturen uppnår ett framspänningsfall på 12.4 mΩcm2 och med spärrspänning av 4.2 kV. En optimerad halv-SJ struktur valdes ut för att genomföra ytterligare TCAD simuleringsstudier om effekterna av JFET bredd, pelartjocklek, samt laddningsobalans mellan n- och p- pelarna. I den här studien simulerades även komponentstrukturer för 6.5 kV och 10 kV spärrspänningsklasser; även dessa resultat diskuteras i rapporten.
|
394 |
Pression exercée sur le coffrage par le béton auto-plaçant / Formwork pressure exerted by self-consolidating concreteOmran, Ahmed Fathy January 2009 (has links)
Self-consolidating concrete (SCC) is an emerging technology that utilizes flowable concrete that eliminates the need for consolidation. The advantages of SCC lie in a remarkable reduction of the casting time, facilitating the casting of congested and complex structural elements, possibility to reduce labor demand, elimination of mechanical vibrations and noise, improvement of surface appearance, producing a better and premium concrete product. The research focussed on capturing existing knowledge and making recommendations for current practice. An experimental program was undertaken at the Université de Sherbrooke to evaluate the lateral pressure developed by SCC mixtures. A portable devise (UofS2 pressure column) for measuring and predicting lateral pressure and its rate of decay of SCC was developed and validated. The UofS2 pressure column is cast with 0.5 m high fresh concrete and air pressure is introduced from the top to simulate casting depth up to 13 m. Then, develop and implement test method for field evaluation of relevant plastic and thixotropic properties of SCC that affect formwork pressure were done. Portable vane (PV) test based on the hand-held vane test method used to determine the undrained shear strength property of clay soil was the first setup as well as the inclined plane (IP) test. The IP device involves slumping a small concrete cylinder on a horizontal plate and then lifting up the plate at different durations of rest until the slumped sample starts to move. Identifying role of material constituents, mix design, concrete placement characteristics (casting rate, waiting periods between lifts, and casting depth), temperature, and formwork characteristics that have major influence on formwork pressure exerted by SCC were evaluated in laboratory and validated by actual field measurements. Relating the maximum lateral pressure and its rate of decay to the plastic properties of SCC were established. In the analytical part of the research, effective ways to reduce lateral pressure by developing formulation expertise and practical guidelines to lower lateral pressure of SCC were proposed. Various design equations as well as chart diagrams to predict formwork pressure that can be exerted by SCC on column and wall elements were derived and reported. In general, the results obtained show that measured lateral pressure is lower than corresponding hydrostatic pressure. The study has shown that lateral pressure exerted by SCC is closely related to the structural build-up at rest (or thixotropy) of SCC. The latter can be controlled using different mixture proportionings, material constituents, and chemical admixtures. SCC mixture with a high rate of structural build-up at rest can develop low lateral pressure on formwork. Increased rate of structural build-up at rest can be ensured by incorporating a greater volume of coarse aggregate, lower paste volume, and/or lower sand-to-total aggregate ratio. Incorporating coarse aggregate of larger maximum size could also increase the thixotropy and hence reduce the lateral pressure. This can also be achieved by reducing the workability of SCC using less HRWRA concentration. Indeed, all mixture factors have been replaced by measuring the rate of structural build-up at rest (or thixotropy) using the developed portable vane and inclined plane field-oriented test as well as the modified Tattersall MK-III concrete rheometer. On the other hand, increasing or maintaining the concrete temperature at a certain level plays an important role to reduce the lateral pressure. The higher concrete temperature can accelerate the heat of hydration of cement with water and increase the internal friction leading to higher thixotropy. Controlling the placement rate has a great impact on the resultant lateral pressure of SCC. The lateral pressure can be reduced by slowing down the casting rate, as concrete has more time to build-up. However, this can slow down the rate of construction. The casting rate should be optimized to yield a cost effective formwork system. Pausing the continuous casting by a waiting period can reduce the exerted lateral pressure. The research investigation could accelerate the acceptance and implementation of SCC technology in cast-in-place applications, which is the preponderate business of the ready mixed concrete suppliers. The research findings could also contribute to the removal of some of the major barriers hindering the acceptance of SCC in cast-in-place applications and provide the industry with much needed guidelines on formwork pressure.--Résumé abrégé par UMI.
|
395 |
Investigation of a ceramic metal matrix composite functional surface layer manufactured using gas tungsten arc weldingHerbst, Stephan January 2014 (has links)
Wear resistant surfaces with high toughness and impact resistant properties are to be created to improve the life cycle cost of brake discs for trains. A potential solution to this industrial problem is to use an arc cladding process. This work describes the application of gas tungsten arc welding (GTAW) for a structural ceramic Metal Matrix Composite (MMC) on steel. The structure of the two ceramics examined indicates the possibility of development of a wear resistant surface, which would extend the life of the brake disc. Silicon Carbide (SiC) and Tungsten Carbide (WC) ceramics were studied to embed them in a steel matrix by an advanced GTAW method. WC particles penetrated the liquid weld pool and also partially dissolved in the steel matrix, whereas, SiC because of the physical properties never penetrated deeper into the weld pool but segregated on the surface. Successful embedding and bonding of WC led to the decision to exercise an in-depth analysis of the bonding between the WC particles and the matrix. Chemical analysis of the matrix revealed more WC dissolution as compared to particle form within the clad. It was observed that WC reinforcement particles built a strong chemical bond with the steel matrix. This was shown by electron backscatter diffraction (EBSD) analysis. The hard clad layer composed of WC reinforced steel matrix gave an matching friction coefficient to high-strength steel in cold wear conditions through Pin-on-Disc wear and friction testing. A prototype railway brake disc was created with the established GTAW parameters to find out the difficulties of producing industrial scale components.
|
396 |
Numerical Simulation of Temperature and Velocity Profiles in a Horizontal CVD-reactorRandell, Per January 2014 (has links)
Silicon Carbide (SiC) has the potential to significantly improve electronics. As a material, it can conduct heat better, carry larger currents and can give faster responses compared to today’s technologies. One way to produce SiC for use in electronics is by growing a thin layer in a CVD-reactor (chemical vapour deposition). A CVD-reactor leads a carrier gas with small parts of active gas into a heated chamber (susceptor). The gas is then rapidly heated to high temperatures and chemical reactions occur. These new chemical substances can then deposit on the substrate surface and grow a SiC layer. This thesis investigates the effect of different opening angles on a susceptor inlet in a SiC horizontal hot-walled CVD-reactor at Linköping University. The susceptor inlet affects both the flow and heat transfer and therefore has an impact on the conditions over the substrate. A fast temperature rise in the gas as close to the substrate as possible is desired. Even temperaturegradients vertically over the substrate and laminar flow is desired. The CVD-reactor is modeled with conjugate heat transfer using CFD simulations for three different angles of the inlet. The results show that the opening angle mainly affects the temperature gradient over the substrate and that a wider opening angle will cause a greater gradient. The opening angle will have little effect on the temperature of the satellite and substrate.
|
397 |
Podstatná změna okolností a nemožnost plnění v českém a anglickém právním řádu / Material change of circumstances and the impossibility of performance within the Czech and Anglo-American legal systemBříza, Marek January 2015 (has links)
English abstract Material change of circumstances and the impossibility of performance within the Czech and English legal system Civil law in the Czech Republic is based on a so-called principle pacta sunt servanda which means that parties are bound by the contract and should perform in accordance with it. It may happen, however, that unexpected supervening event substantially change the circumstances after the formation of a contract to the extent that it become impossible to perform the contract or it makes performance for affected party so burdensome that it will lead the party to the economical destruction. Such a change may lead to situations that to hold the affected party to fulfil its promise would be unjust and contrary to morality. Therefore, Czech Civil Code contains few provisions based on which court may terminate the contract or adjust the contract to restore equilibrium of the performance. Thesis focuses on two of those provisions, namely impossibility of performance and impracticability of performance. Thesis describes relevant legal institutes and doctrines, development of case law, analyze past and current Czech Civil Code and compare it with English case law and international and European soft law. After introductory chapter, chapter two describes relevant principles of civil law and...
|
398 |
Approche communicationnelle de l'organisation humaine des systèmes d'informationPin, Didier 13 December 2012 (has links)
Cette thèse présente le rôle de la communication dans l'organisation humaine du Système d'Information d'une Université. Par organisation humaine, nous entendons l'ensemble des différents groupes sociotechniques constituant les services fonctionnels et techniques d'un Etablissement. L'approche communicationnelle est, ici, le fil conducteur pour comprendre les interactions individuelles et collectives des acteurs au sein des services. Notre statut de Directeur de la DSI de l'Université Paul Cézanne nous a permis de conduire une recherche compréhensive de terrain. Celle-ci a particulièrement mis en évidence les logiques relationnelles qui donnent une plus grande efficacité au système d'information. La question de départ est donc de savoir comment optimiser le SI d'une Université. Pour répondre à cette question, nous sommes allé chercher dans les Sciences de l'Information et de la Communication, les fondements théoriques de la mise en relation. Les travaux de l'Ecole de Palo Alto et particulièrement sa mise en application dans le modèle orchestral nous ont donné des outils conceptuels pour construire une meilleure compréhension de la dynamique des relations. La Communication devenait ainsi la clé des pratiques et des usages communs qui construisent un SI. Elle devient un catalyseur de la compréhension entre les métiers et même, sous certains aspects, le lien entre les facteurs techniques et humains. Grâce à notre démarche, à la fois conceptuelle (celle du doctorant) et pratique (celle du professionnel), nous avons identifié les différentes visions du SI perçues par les acteurs et nous avons mis en avant leurs ambivalences et leurs complémentarités. / This thesis presents the role of communication in human organization of the University's Information System. By human organization, we mean all the different socio-technical groups constituting the technical servicing of an establishment. The approach is communicative, here the link to understand the interactions of individual and collective actors within departments. Our status as DSI Director of the University Paul Cézanne has allowed us to conduct a comprehensive research field. This was particularly highlighted the relational logics that give greater efficiency to the information system. The initial question is how to optimize the IF of a University. To answer this question, we looked for in Information Science and Communication, the theoretical foundations linking. The work of the School of Palo Alto and especially its implementation in the orchestral model gave us the conceptual tools to build a better understanding of the dynamics of relationships. Communication thus became the key practices and common usage that build an IS. It becomes a catalyst for understanding between business and even, in some respects, the link between the technical and human factors. With our approach, both conceptual (the PhD's) and practice (the profesionnal's), we identified the different visions of SI perceived by the actors and we have put forward their ambivalence and their complementarities. Therefore, the computational aspects are generally put forward a simple vision repositioned as special issue of one of the groups, the engineers' one.
|
399 |
Céramiques et composites pour applications en conditions extrêmes dans le nucléaire et le spatial / Ceramics and composites materials for applications in extreme environements in nuclear and space applicationsAllemand, Alexandre 22 December 2017 (has links)
Le présent document obéit à un plan strict inhérent à tous les manuscrits de thèsepassée en Validation des Acquis de l’Expérience (VAE). Après un CV détaillé ledocument présente tout d’abord un retour réflexif sur le parcours professionnel c'està-dire, une synthèse sur les taches effectuées d’un travail de type projet vers uneimplication de plus en plus forte vers un travail de recherche à proprement parlé. Aprèsce retour réflexif qui permet d’avoir une vue d’ensemble de la progression du parcours,une synthèse est proposée, non pas de la totalité des travaux, mais de trois domainesbien précis et représentatifs du parcours de recherche. Ce choix s’est fait en cherchantun fil d’Ariane qui est tout simplement la nature chimique de la céramique étudiée ;dans le présent document il s’agit de carbures et plus précisément de SiC, TiC, ZrC,HfC. Tout d’abord le travail sur les céramiques monolithiques pour les applicationsnucléaires est abordé puis, les applications spatiales avec la mise au point deprotections contre l’oxydation à partir de poudres revêtues enfin, le document s’achèvepar des travaux d’infiltration de céramiques à partir d’un matériau intermétallique oucomment il est possible de faire des céramiques ultra réfractaires à basse température.Ces travaux étant originaux ils ont fait l’objet de brevets et de publications qui serontabordés dans la troisième partie. / This document obeys a strict plan inherent in all PhD manuscripts passed in Validationof the Assets of Experiment (VAE). After a detailed resume this document first of all,presents a reflexive return on the career i.e., from a work of type project towards anincreasingly strong implication to a research task. After this reflexive return whichmakes it possible to have an overall picture of the progression of the course, asynthesis is proposed, not of total work, but of three fields quite precise andrepresentative of the course of research. This choice was done by seeking a wire ofARIANE which is the chemical nature of the studied ceramics; in this document it isabout carbides and more precisely about SiC, TiC, ZrC, HfC. First of all monolithicceramics for the nuclear applications is approached then, the space applications withthe elaborating of protections against oxidation made by core shell powders finally, thedocument is completed by ceramics infiltrations from an intermetallic material or howit is possible to make ultra refractory ceramics at low temperature. As these works areoriginal they were the object of patents and publications which will be approached inthe third part.
|
400 |
Estudo da influência da adição de polímeros precursores cerâmicos na sinterização de SiC e Al2O3 / Influence of the addition of precursor polymers on sintering SiC and AI2O3 ceramicsGodoy, Ana Lúcia Exner 14 March 2006 (has links)
Neste trabalho foram avaliados os efeitos da adição de polímeros precursores na sinterização, microestrutura, dureza e na tenacidade à natura de materiais cerâmicos à base de carbeto de silício e de AI2O3. As matérias-primas cerâmicas foram caracterizadas por análise semi-quantitativa por espectrometria de fluorescência de raios X, difração por laser, adsorção gasosa e microscopia eletrônica de varredura. Para os polímeros utilizou-se análise termogravimétrica. A cinética de sinterização das amostras compactadas foi estudada por dilatometria. A caracterização dos materiais sinterizados incluiu medidas de densidade aparente pelo princípio de Arquimedes e/ou por picnometria de He, porosimetria por intrusão de Hg, análises de difração de raios X, de carbono total, avaliação da microestrutura e por microscopia eletrônica de varredura e de transmissão, análise por espectrometria de raios X por dispersão de energia, ensaios de impressão Vickers para determinação de dureza e tenacidade à fiatura. No estudo de cerâmica à base de carbeto de silício foram utilizados os aditivos óxidos AI2O3 (4% em peso) e Y2O3 (4% em peso) e os aditivos poliméricos PMHS (polimetilhidrogenossiloxano) e polimetilhidrogenossiloxano com D4Vi. O processamento envolveu a cura do material, pirólise e sinterização (1850 °C e 1950 °C/l h. Ar ou N2). Nas amostras à base de carbeto de silício houve elevada perda de massa, principalmente quando a atmosfera de sinterização foi argônio. As amostras à base de carbeto de silício, com adição de polímeros atingiram densidade de até 3,15 g/cm3 quando pirolisadas a 900 °C em N2 e sinterizadas a 1950 °C, em atmosfera de nitrogênio. Para as amostras à base de alumina foram utilizados os aditivos poliméricos PMHS, PMS (polimetilsilsesquioxano) e PPS (polifenihnetilvinilhidrogenosilsesquioxano) e as sinterizações foram realizadas a 1650 °C e 1700 °C, não havendo variações significativas nas densidades obtidas nas duas temperaturas. Nos materiais com adição de PMHS foram obtidos compósitos de alumina e mulita, sendo que os grãos de mulita foram formados intergranularmente. Nas amostras contendo PMS ou PPS a distribuição das feses formadas, Si2Al4O4N4 e Si2ON2, foi bastante heterogênea, A obtenção de compósitos cerâmicos utilizando pequenas adições de polímeros precursores cerâmicos mostrou-se viável para materiais à base de alumina, sendo uma rota simples de conformação, com grande potencial para a obtenção de peças com geometria complexa. / The effects of the addition of precursor polymers on sintering, microstructure, hardness and fiacture toughness of silicon carbide and alimiina ceramics were studied. The ceramic raw materials were characterized by semi-quantitative analysis by X-ray fluorescence, particle size by laser diffraction, specific surface area by gas adsorption and microstructural analysis by scanning elecfron microscopy. The polymers were analyzed by thermogravimetry. The sintering kinetics of cold-pressed specimens was studied by dilatometry. The sintered materials were characterized by evaluation of apparent density by the Archimedes technique and/or helium picnometry, by mercury porosimetry, by X-ray diflftaction, by evaluation of total carbon content, by scanning and transmission electron microscopy, by enetgy dispersion X-ray spectrometry, and by Vickers indentation analysis for determining hardness and fiacture toughness. AI2O3 (4wt.%) and Y2O3 (4wt.%) and polymetylhydrogenosiloxane and polymetylhydrogenossiloxane with D4Vi were the sintering aids for SiC. The processing procedures were material cure, pyrolysis and sintering (1850 X and 1950 °C/1 h, Ar or N2). High mass loss was measured in silicon carbide based ceramics, mainly under argon. Silicon carbide based ceramics with polymer sintering aids achieved 3.15 g/cm3 density after pyrolysis at 900 °C under N2 and sintering at 1950 °C under nitrogen. PMHS, PMS and PPS polymer sintering aids were used for almnina based ceramics sintering carried out at 1650 °C and 1700 °C, without significant difference in the final density. Addition of PMHS yielded alumina and mullite composites, with intergranular mullite grains. Heterogeneous Si2AI4O4N4 and Si2ON2 phases were obtained in specimens with PMS or PPS, The preparation of ceramic composites using small amounts of precursor polymers showed a suitable process for alumina-based ceramics, a simple forming route, with high potential for the fabrication of complex shape pieces.
|
Page generated in 0.0522 seconds