Advancements in the semiconductor industry require new materials with improved performance. With the introduction of copper as the interconnect material for integrated circuits, efficient diffusion barriers are required to prevent the diffusion of copper into silicon, which is primarily through grain boundaries. This dissertation reports the processing of high quality stoichiometric thin films of TiN, TaN and HfN, and studies their Cu diffusion barrier properties. Epitaxial metastable cubic TaN (B1-NaCl) thin films were grown on Si(001) using an ultra-thin TiN (B1-NaCl) seed layer which was as thin as 1 nm. The TiN/TaN stacks were deposited by Pulsed Laser Deposition (PLD), with the TiN thickness systematically reduced from 15 to 1 nm. Microstructural studies included X-ray diffraction (XRD), transmission electron microscopy (TEM) and high resolution TEM (HRTEM). Preliminary Cu diffusion experiments showed that the TiN seed layer thickness had little or no obvious effect on the overall microstructure and the diffusion barrier properties of the TaN/TiN stacks. Epitaxial and highly textured cubic HfN (B1-NaCl) thin films (~100 nm) were deposited on MgO(001) and Si(001) using PLD. Low resistivities (~40 mu omega-cm) were measured with a four point probe (FPP). Microstructural characterizations included XRD, TEM, and HRTEM. Preliminary Cu diffusion tests demonstrated good diffusion barrier properties, suggesting that HfN is a promising candidate for Cu diffusion barriers. Cubic HfN (B1-NaCl) thin films were grown epitaxially on Si(001) substrates by using a TiN (B1-NaCl) buffer layer as thin as ~10 nm. The HfN/TiN stacks were deposited by PLD with an overall thickness less than 60 nm. Detailed microstructural characterizations included XRD, TEM, and HRTEM. The electrical resistivity measured by FPP was as low as 70 mu omega-cm. Preliminary copper diffusion tests showed good diffusion barrier properties with a diffusion depth of 2~3 nm after vacuum annealing at 500 degrees C for 30 minutes. Additional samples with Cu deposited on top of the cubic HfN/TiN/Si(001) were vacuum annealed at 500 degrees C, 600 degrees C and 650 degrees C for 30 minutes. The diffusivity of copper in the epitaxial stack was investigated using HRTEM. The measured diffusion depths, 2 Dt , were 3, 4 and 5 nm at 500 degrees C, 600 degrees C and 650 degrees C respectively. Finally, the diffusivity of Cu into epitaxial HfN was determined to be D=D0 exp(-Q/kT)cm2s-1 with D0=2.3x10-14cm2s-1 and Q=0.52eV.

In the organometallic chemistry, the imido complexes are an interesting species because it of their rich reactivity. Imido has two forms, where M=N-R form is nucleophilic and M¡ÝN-R form is elctrophilic. The thermo- or photochemical- decomposition of metal azido complexes is known to result in the formation of the corresponding metal nitride(M¡ÝN) or imido complexes. These reactions are oxidative cleavage type. As far as we know, imido species have not been generated on metal surfaces; therefore, we attempt to use the azidotrimethylsilane((CH3)3Si-N3 ; TMSN3) as precursors to produce imido species(TMSN=Cu) by N2 extrusion mechanism on Cu(111). The process was explored by a combination of temperature-programmed desorption (TPD), reflection absorption infrared spectroscopy (RAIRS), and X-ray photoemission spectroscopy (XPS) techniques. In addition, density functional theory (DFT) calculations were conducted to obtain the optimized geometries for the various surface intermediates. The computed IR spectra facilitated the vibrational mode assignments. TPD spectra show that TMSN=Cu was hydrogenated to the TMSNH2 amine product around 520 K. We propose that the hydrogen source is adsorbed methyl groups, invoking the cleavage of the Si-C bond. TMSCH2N3 molecule was also investigated. In this case, N2 and H2 molecules were found to desorb around 260 K and 320K. A novel TMSC¡ÝN product was observed around 280K. We suggest it is a result of the metathesis reaction from ethylidyne (TMSC¡ÝCu) and nitride(N¡ÝCu) species. The TMSC¡ÝCu species are produced by double £\-hydride elimination of TMSCH2-Cu groups. The N¡ÝCu may be generated by the thermaldecomposition of copper azide(N=N=N-Cu). RAIRS reveal that there are three kinds of azido vibrations,where the higher frequency is assigned to the N=N=N-Cu species. This product is verified by the TPD of adsorbed TMSC¡ÝN molecule. Intriguingly, the thermal chemistry of TMSC¡ÝN molecule indicates that the isomeric molecule TMSN¡ÝC could be formed around 210 K, evidenced by a notable change in the RAIRS. The higher frequency £hC¡ÝN of TMSC¡ÝN transforms into a lower frequency £hC¡ÝN for TMSN¡ÝC. The coverage-dependent studies of RAIRS and XPS performed at 160 K surface temperature show that the isomerization may be intermolecular. The back-£k bonded TMSN¡ÝC molecule is desorbed around 410 K. XPS and RAIRS at 800 K show that isocyanide could polymerize to polyisocyanide, with an imine structure, and the characteristic C¡ÝN stretching mode disappeared.

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<p>Processing of nanostructured WC-Co and W-Co powders,modelling of Fe-Mn-Si alloy, swelling of Fe-Cu alloy, andmechanical properties and sintering of Fe-Mn-Si steels havebeen studied in the present thesis.</p><p>W-Co precursors made by chemical synthesis were used toproduce nanostructured WCCo and W-Co powders by calcination,reduction and carburization. The phase constituents in thecalcined powders depend on temperature and atmospheres. Cobaltcan accelerate the reduction rate of the W-Co precursors as acatalyst, and cobalt influences the formation of intermediatephases during the reduction of the precursors.</p><p>The ratio of carbon monoxide to carbon dioxide controlscarburization process, gives different intermediate phases andcarburization rates. There exist several intermediate phases: W₆Co₆C, W₃Co₃C, W₂C due to varying carbon monoxide content in thecarburization gases. Nanostructured WC-Co powders with aparticle size of 20-50 nm have been obtained.</p><p>The effect of silicon content on the particle sizedistribution of milled Fe-Mn-Si master alloy powders is muchmore significant than that of manganese content. A finer finalparticle size can be obtained in the alloy powders with highersilicon compositions. Long time milling results in theagglomeration of small particles. The grinding process can bedescribed using classic batch grinding equation based on thepopulation balance model. A swelling model for Fe-Cu alloyssintered at the temperatures above the melting point of copperhas been established based on the penetration mechanism. In themodel, the particle coordination number and heating rate wereused to express the porosity and the thickness of the diffusionlayers between iron and copper particles respectively.</p><p>The effects of sintering temperature and time on theproperties of sintered steels have been studied. Fe-Mn-Simaster alloys made by cast-milling, atomizing, and acombination of atomization and milling have been covered. Themilled, and atomizationmilled alloy steels showed goodmechanical properties with small dimensional change. Transientliquid phase of the Fe-Mn-Si alloys accelerates densification,and offer fast diffusion of alloying elements. The addition ofa small amount of Fe-Mn-Si master alloy to Astaloy 85Mo powdercan lead to high strength with zero dimensional change.</p><p><b>Key words:</b>Processing; Modelling; Nanostructured powder;WC-Co; W-Co; Calcination; Reduction; Carburization; Particlesize; Sintered steel; Fe-Cu alloy; Swelling; Fe-Mn-Si masteralloy; Mechanical properties; Sintering parameters.</p>

Aufgrund von guten Eigenschaften als Kupferdiffusionsbarriere und guter elektrischer Leitfähigkeit könnte sich Ruthenium und Ruthenium basierte Legierungen als Kupferdiffusionsbarriere eignen. Auf eine theoretische Aufarbeitung von Elektromigrationsmechanismen und in der Praxis eingesetzte Elektromigrationsteststrukturen folgen beschleunigte elektrische Elektromigrationstestergebnisse. Es konnte gezeigt werden, dass das System Kupfer, Ruthenium, Tantalnitrid Elektromigrationsstabiler als das konventionelle System Kupfer, Tantal, Tantalnitrid ist.

Heavy-metal pollution is an issue of concern in estuaries such as Biscayne Bay that are heavily influenced by agricultural, urban, and harbor activities. The goals of this study were to provide a state of the bay assessment that can be used to interpret changes that have occurred over the past 60 years in Biscayne Bay, to provide a baseline to compare changes in the ecosystems during and after execution of the Comprehensive Everglades Restorations Plan (CERP), and to determine if benthic foraminiferal assemblages in Biscayne Bay reflect heavy-metal contamination in sediments. Surficial samples were collected at 147 sites throughout the bay. Analyses included geochemical assessment of the mud fraction for 32 chemical parameters, grain-size analysis, and assessment of foraminiferal assemblages at the genus level. Geochemical analyses revealed elevated concentrations of a suite of heavy metals in the sediments of the northern bay, between Miami and Key Biscayne, and the periphery of the southern bay from Black Creek Canal south to Turkey Point. Cluster analysis, multi-dimensional scaling, and multivariate-correlation analyses revealed three distinct foraminiferal assemblages. One assemblage, characteristic of the northern bay, was defined by stress-tolerant taxa including Ammonia, Cribroelphidium, Nonion, and Haynesina, which were present in low abundances. Distribution of this assemblage correlated with the most elevated concentrations of heavy metals. The assemblage that defined the southwestern margin of the bay was dominated by Ammonia and Quinqueloculina. This assemblage is characterized by the lowest diversities and highest abundances, and is likely influenced by both reduced salinity and elevated organic-carbon concentrations.

Copper based interconnects with low dielectric constant layers are currently used to increase interconnect densities and reduce interconnect time delays in integrated circuits. The technology used to develop copper interconnects involves Chemical Mechanical Planarization (CMP) of copper films deposited on low-k layers (silica or silica based films), which is carried out using slurries containing abrasive particles. One issue using such a structure is copper contamination over dielectric layers (SiO2 film), if not reduced, this contamination will cause current leakage. In this study, the conditions conducive to copper contamination onto SiO2 films during Cu-CMP process were studied, and a post-CMP cleaning technique was discussed based on experimental results. It was found that the adsorption of copper onto a silica surface is kinetically fast (< 0.5 minute). The amount of copper absorbed is pH and concentration dependent and affected by presence of H2O2, complexing agents, and copper corrosion inhibitor Benzotrazole. Based on de-sorption results, DI water alone was unable to reduce adsorbed copper to an acceptable level, especially for adsorption that takes place at a higher pH condition. The addition of complex agent, citric acid, proved effective in suppressing copper adsorption onto oxide silica during polishing or post-CMP cleaning by forming stable copper-CA complexes. Surface Complexation Modeling was used to simulate copper adsorption isotherms and predict the copper contamination levels on SiO2 surfaces.Another issue with the application of copper CMP is its environmental impact. CMP is a costly process due to its huge consumption of pure water and slurry. Additionally, Cu-CMP processing generates a waste stream containing certain amounts of copper and abrasive slurry particles. In this study, the separation technique electrocoagulation was investigated to remove both copper and abrasive slurry particles simultaneously. For effluent containing ~40 ppm dissolved copper, it was found that ~90% dissolved copper was removed from the waste streams through electroplating and in-situ chemical precipitation. The amount of copper removed through plating is impacted by membrane surface charge, type/amount of complexing agents, and solid content in the slurry suspension. The slurry particles can be removed ~90% within 2 hours of EC through multiple mechanisms.

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