L'oxyde de nickel est l'un des matériaux électrochromes les plus utilisés dans le domainedes fenêtres intelligentes qui contrôlent la lumière et la chaleur provenant de l'extérieur versl'intérieur des bâtiments. Il est important de mentionner que l’oxyde de nickelstoechiométrique est un isolant à température ambiante. Les propriétés microstructurales,chimiques, optiques et électrochromes des couches minces dépendent fortement du procédéde préparation et traitement final. En outre, l’un des principaux défis consiste à fabriquer lescouches minces sur des substrats souples afin de fabriquer des fenêtres électrochromes degrande taille ce qui demande un traitement à T ambiante. A cet égard peu d’étudesbibliographiques ont évalué l’effet du traitement par les rayonnements UV sur les propriétésdes couches électrochromes. Dans ce travail, des couches minces d'oxyde de nickel (NiO) ontété préparées par la méthode Sol-Gel associée aux techniques de dépôts par centrifugation(spin-coating) et par trempage-retrait (dip-coating). L’ajustement des paramètresexpérimentaux relatifs à ce procédé (la concentration du précurseur, la nature du solvant et dustabilisant, le nombre de couches déposées et le type des traitement final (calcinationà 300 °C ou traitements UV) a permis d’optimiser les conditions de préparation des couchesminces et par la suite de contrôler les caractéristiques chimiques, microstructurales et optiquesdes couches développées. Cette étude a montré qu'une concentration de 0,3 M d'acétate denickel, le méthanol comme solvant et le triton X-100 en tant que stabilisant conduisent à unecouche mince NiO avec les meilleures performances optiques. Les caractérisations par lestechniques (DRX, ATG, FT-IR, XPS et GDOES) ont particulièrement mis en évidence le rôledes conditions de traitement final sur la composition et la morphologie des couches d’oxydede nickel élaborées. La DRX a montré qu’elles sont faiblement cristallisées et que la structuredevient plus amorphe avec le traitement UV. La spectrométrie UV-visible et les CV ont révéléque les couches traitées par UV en utilisant une lampe de 30 W pendant 5 h (UV-30W-5h)possèdent le contraste optique le plus élevé et la meilleure stabilité électrochimique. L'analysemorphologique a montré que les couches minces déposées par la technique de spin coatingsouffrent de la formation de fissures et d’une hétérogénéisation de la surface. Pour résoudre ceproblème, le procédé de spin-coating a été remplacé par la technique dip-coating tout enconservant les paramètres optimisés précédemment. Cette technique a permis de produire descouches minces plus homogènes et moins fissurées. D'autre part, pour continuer à améliorerles propriétés électrochromes, ces couches ont été dopées par le lithium. Les résultats obtenusont montré l’importance de l’addition de Li sur l’amélioration des propriétés électrochromesde Li : NiO cyclé dans KOH comme électrolyte. En effet, une variation de la transmittanceΔT de 70% (à 450 nm) a été obtenue dans les couches minces 8 % Li: NiO. Le résultat quiressort des caractérisations FT-IR et ATG, porte sur le fait que les couches calcinéescontiennent moins de composés organiques, à l’inverse de celles traitées par UV riches enmatière organique. L'analyse XPS a montré que la teneur en Ni2+ est plus élevée dans lescouches dopées. L’analyse GDOES a montré une distribution homogène de Li dans toutel’épaisseur de la couche. Toutefois, les couches minces de 8% de Li: NiO traitées par UV-30W-5h souffrent d’une dégradation de leurs performances électrochromes dans le KOHaprès quelques cycles, pour cette raison, elles ont été cyclées dans d’autres électrolytesliquides ioniques, tels que le LiTFSI-EMITFSI, le NaTFSI-EMITFSI et le KTFSI-EMITFSI.Les meilleures propriétés électrochromiques ont été obtenues avec l'électrolyte KTFSIEMITFSI.Ce résultat important représente une bonne perspective pour l'avenir. / Nickel oxide is one of the most widely used electrochromic materials in the field of smartwindows that control light and heat from the outside to the inside of buildings. It is importantto mention that stoichiometric nickel oxide is an insulator at room temperature. Themicrostructural, chemical, optical and electrochromic properties of the films are highlydependent on the process of preparation and final treatment. In addition, one of the mainchallenges is the elaboration of thin films on flexible substrates suitable for electrochromicapplications which requires treatment at ambient T. In this respect, in literature, few studieshave reported the effect of UV treatment on the properties of electrochromic layers. In thiswork, thin films of nickel oxide (NiO) were prepared by the Sol-Gel method associated withspin-coating and dip-coating techniques. The adjustment of the experimental parametersrelating to this process (the concentration of the precursor, the nature of the solvent and thestabilizer, the number of deposited layers and the type of final treatment (calcination at300 °C or UV treatments) made it possible to optimize conditions for the preparation of thinlayers and subsequently to control their chemical, microstructural and optical characteristics.This study showed that a concentration of 0.3 M nickel acetate, methanol as solvent and triton100-X as a stabilizer lead to NiO thin film with the highest optical properties. The techniquesof characterizations (DRX, ATG, FT-IR, XPS and GDEOS) have particularly highlighted therole of the final treatment conditions on the composition and the morphology of the preparednickel oxide thin films. The XRD results showed that they are weakly crystallized and thestructure becomes even more amorphous for UV treated samples. UV-visible spectrometryand cyclic voltammetry revealed that UV-treated thin films using a lamp of 30 W for 5 h(UV-30W-5h) have the highest optical contrast and the highest electrochemical stability.Morphological analysis (SEM) indicated that the thin films deposited by the spin-coatingtechnique suffer from crack formation and surface heterogenization. To solve this issue, thespin-coating process has been replaced by the dip-coating technique while retaining thepreviously optimized parameters. This technique has made it possible to produce thin filmsthat are more homogeneous and less cracked. On the other hand, to continue to improve theelectrochromic properties, these thin films were doped with lithium. The results showed theimportance of the addition of Li on the improvement of the electrochromic properties ofLi : NiO cycled in KOH as electrolyte. Indeed, a variation of the ΔT transmittance of 70 %was reached for the thin films 8 % Li : NiO. The result of the FT-IR and ATGcharacterizations showed that the calcined thin films contain lesser amount of organiccompounds compared to those treated by UV which still contains large amount of organicmatter. XPS analysis has shown that the Ni2+ content is higher in the doped layers. GDOESanalysis showed a homogeneous distribution of Li along the thickness of the thin film.However, 8% Li: NiO thin films treated with UV-30W-5h suffer from a degradation of theirelectrochromic performances in KOH after a few cycles. For this reason, their cyclingproperties have been investigated in a large range of electrolytes, based on ionic liquidincluding LiTFSI-EMITFSI, NaTFSI-EMITFSI and KTFSI-EMITFSI. The highestelectrochromic properties were obtained with KTFSI-EMITFSI as an electrolyte. Thisimportant result presents a good prospect for the future.

Dès son origine anglaise au XIXe siècle dans les public schools, le sport répondait à des impératifs stratégiques allant du contrôle des populations étudiantes, jusqu'au projet plus vaste de formation d'une élite conquérante. Dans l'importation en France du sport, Pierre de Coubertin posa des objectifs similaires, désirant réformer une société jugée en crise. Le sport, caractérisé par une liberté encadrée et régulée, se heurta dans ce projet à la gymnastique, autre mode de contrôle des populations en vigueur dans les pratiques corporelles, marqué par le disciplinaire. Surtout, tel que pensé par Coubertin, le caractère du sport est fondamentalement ambivalent, étant à la fois aliénant et émancipateur. Cette ambiguïté se cristallise dans la question de l'égalitarisme. En effet, le sport, fondamentalement aristocratique au sens où il ne profite qu'aux forts physiquement, parvient paradoxalement à se présenter comme une pure méritocratie où le rang de chacun serait uniquement dépendant des efforts fournis, produisant ainsi ordre et travail. Cette représentation méritocratique du sport s'est cependant construite tout au long du XXe siècle, répondant à un progressif oubli de son caractère aristocratique. Toutefois, malgré les évolutions des discours, le fait sportif demeure aristocratique, tant physiologiquement que psychologiquement. Des résistances naissent : celles du sport lui-même, qui ne parvient pas à se réduire au seul mérite ; celles des sportifs, qui élaborent des stratégies qualifiées de délictueuses (triche, dopage, etc.) afin de subvertir l'aristocratie sportive. Des corps utiles, des âmes travailleuses et des caractères soumis sont ainsi produits par cette dialectique du mérite. Le sport exemplifie les valeurs du mérite et tâche d'en imposer la logique, en se constituant comme un dispositif se généralisant peu à peu à tous les champs de la société. / From its British beginning in the XIXth century in the public schools, sport was meant for the strategic imperatives of controlling student populations and at a larger scale for training a dominating elite. Pierre de Coubertin has set similar goals when importing sport in France, wanting to reform a society considered in crisis. Sport, characterized by a framed and regulated freedom, faced gymnastics, the established method of population control by body practice, characterized by discipline. Above all, as thought by Coubertin, the sport characteristic is fundamentally ambivalent, being both alienating and emancipating. This ambiguity crystallize itself in the issue of egalitarianism. Sport, fundamentally aristocratic in the sense that it benefits only to physically strong people, paradoxically succeeds to show itself as a pure meritocracy where ranking is solely dependent of the provided efforts, thus producing order and work. This meritocratic representation of sport has built itself throughout the XXth century, gradually replacing its aristocratic characteristic. However, despite the evolutions of speeches, the sporting fact remains aristocratic, both on physiological and psychological sides. Some resistances arise: those of sport itself, which can not reduce itself to the sole merit; those of the sportsmen, who elaborate strategies described as unlawful (cheating, doping, etc.) in order to subvert the sport aristocracy. Useful bodies, hardworking minds, submissive personalities are thus produced by this dialectic of merit. Sport exemplifies the values of merit and try to compel its logic, by constituting itself as an apparatus which gradually extends to all fields of the society.

A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaOx doped with Zr, was deposited and studied. The film’s electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.

Die intensive Auswertung unterschiedlicher schriftlicher und mündlicher Quellen sowie die Erschließung von damals "geheimer" Literatur für die Forschung heute ermöglicht eine differenzierte Rekonstruktion historischer Abläufe. Die vorliegende Arbeit nutzt diesen Zugang zur Darstellung von kleineren und größeren DDR-internen sportpolitischen Strukturwandlungen der 1960er und 1970er Jahre, die ihren Höhepunkt in einer dramatischen Umsteuerung des DDR-Hochleistungssports fanden.<br /> Es wird gezeigt, wie die Akteure unter Führung von Manfred EWALD, gewähltem Mitglied des SED-Zentralkomitees, einer Zentralfigur des DDR-Sports (vergleichbar mit der Bedeutung eines Willi DAUME im Westen) zwischen Systemzwängen und individueller Handlungsfreiheit innerhalb des Rahmens einer Diktatur in der Phase des Wechsels von Walter ULBRICHT zu Erich HONECKER eine Effektivierung des zentralistischen Modells durchsetzten (eine Parallele zum Ansatz von Monika KAISER).<br /> Im Gegensatz zu vielen kontroversen Erklärungsmodellen belegt der Verf., dass die Medaillenerfolge durch die zentrale Steuerung aller Abläufe gewährleistet wurden. Ohne SED-Auftrag wurde 1967 die "Leistungssportkommission der DDR" (LSK der DDR) gebildet. <br /> Im Unterschied zu den zahlreichen vom Verf. erstmals dargestellten Vorgängermodellen war diese SED-LSK "oberhalb des DTSB" angesiedelt und erteilte ihm Parteiaufträge - die Unterordnung des organisierten Sports unter die Autorität des Zentralkomitee machte angesichts der "Nationalen Fronten" von Armeesportvereinigung "Vorwärts" und Sportvereinigung "Dynamo" (SPITZER) jegliche zentrale Sportpolitik erst durchsetzbar.<br /> Zur "LSK der DDR" waren SED-Mitglieder abgeordnet, welche ihr Sachgebiet vertraten und nach gemeinsamer Beschlussfassung die Ergebnisse der LSK-Arbeit wiederum in ihrem jeweiligen Tätigkeitsfeld durchzusetzen hatten, was in der Diss. ausgeführt wird. Sportvertreter ebenso wie hochrangige Abgesandte der Ministerien, die mit der Produktion von Gütern für den Hochleistungssport befasst waren, gehörten den LSK-Gremien an, die auch die DDR-Sportwissenschaft steuerten; es lässt sich sogar nachweisen, dass die Herrschaft über diesen wichtigen Apparat sowie die Dopingforschung ein Hauptmotiv der LSK-Bildung gewesen ist.<br /> <br /> Durch seine Quellenorientierung und die Fülle an Belegen gibt die vorliegende Arbeit neue Anreize zur Auseinandersetzung mit dem Phänomen der Steuerung des Hochleistungssports in der DDR - auch über den Untersuchungszeitraum hinaus. <br /> Die Untersuchung wurde von der Humanwissenschaftlichen Fakultät der Universität Potsdam als Dissertation angenommen. Sie geht auf ein Stipendium dieser Universität zurück; das Verfahren konnte mit einem Prädikat abgeschlossen werden. Gutachter waren Prof. Dr. Dr. Gertrud PFISTER, Kopenhagen, Prof. Dr. Christoph KLEßMANN, Potsdam, und der Betreuer, Steady Visiting Prof. Univ. Odense, Priv.-Doz. Dr. habil. Giselher SPITZER, Berlin / Potsdam / Odense (Dänemark). / The guaranteed provision of material support for the athletes used to be a precondition for success in sports: 'Competitive sports under the conditions of the GDR' - thus the source material on this early model of professional sports. The author reveals both illegal (according to the IOC regulations) payments and a new drive towards success-oriented payments at least for the coaches. The latter trend was already the result of a dramatic change in competitive sports in the GDR. Today, a thorough analysis of contemporary documents, oral testimony, and formerly classified literature allows a more nuanced reconstruction of the historical events and processes. This work shows how the organisers of GDR sports, led by Manfred EWALD (EWALD was an elected member of the SED Central Committee and a central figure in the GDR sports scene. He might be characterised as the opposite number of Willi DAUME in the FRG.) succeeded with establishing a more efficient centralistic model (here, there is a parallel with Monika KAISER's approach). Despite the constraints of the system, they brought about his change at a time of political transition from Walter ULBRICHT to Erich HONECKER. <br /> In contrast to many other, controversial interpretations, the author argues that the athletic successes originated in the central organisation of GDR sports. In 1967, the 'Competitive Sports Commission of the GDR' (LSK) was established without explicit orders from the SED. In contrast to numerous older models, which the author has discovered, this new model was positioned 'above the DTSB' and gave party orders to the DTSB - the subordination of organised sports to the authority of the Central Committee allowed the implementation of a central sports policy. Given the 'National Fronts' of the Army Sports Club Vorwärts and the Sports Club Dynamo (SPITZER), this was an especially difficult task. The LSK was composed of members of the SED. After reaching an agreement on certain issues, every member had to implement the agreed policy in his or her specific field of activity, as this dissertation shows. The LSK subcommittees consisted of representatives of the sports as well as high-ranking representatives of those ministries which supervised the production of goods needed in competitive sports. It can be demonstrated, that control over this important body as well as the doping research was an important factor in the establishment of the LSK. <br /> <br /> The work on 'Changes in the control of competitive sports in the GDR in the 1960s and 1970s', brought the awarded degree of Doctor of Philosophy with distinction by the faculty of arts of the University of Potsdam to the author. The research was sponsored by the University of Potsdam. The degree committee consisted of Professor Gertrud PFISTER (Kopenhagen), Professor Christoph KLEßMANN (Potsdam), and the dissertation supervisor, Privatdozent Dr Giselher SPITZER (Berlin, Potsdam, Odense (Denmark)).

Kohlenstoffnanoröhrchen (engl. carbon nanotube, CNT) sind vielversprechende Kandidaten für den Ersatz von Kupferleitbahnen die bei weiterer Strukturverkleinerung von integrierten Schaltkreisen notwendig wird. In dieser Arbeit wird mit Hilfe von ab-initio Simulationen auf Basis der Dichtefunktionaltheorie die elektronische Struktur von halbleitenden CNTs beispielhaft anhand des (8,4)-CNTs untersucht. Nach Besetzung des CNT mit Metallatomen, hier Kobalt, zeigen sich massive Änderungen der Bandstruktur. Es reichen bereits überraschend kleine Mengen des Metalls aus, um einen starken Effekt zu erreichen. Die Änderungen der elektronischen Struktur sind stark abhängig von der genauen Position der Metallatome relativ zum Kohlenstoffgerüst der CNTs, der Einfluss der mechanischen Verformung des CNTs als Reaktion auf die Anlagerung ist hingegen sehr gering. Die relevanten Bänder der Kobaltatome liegen leicht unterhalt der Fermi-Energie und sorgen bei der Integration in die Bandstruktur des CNTs für die Schließung der Bandlücke und somit für die Transformation eines vorher halbleitenden CNTs in ein leitendes. Diese Transformation konnte auch mit Simulationsrechnungen zum Elektronentransport bestätigt werden. Ferner wurden bei weiteren Rechnungen eine ausgeprägte Spinabhängigkeit der Bandstruktur ermittelt, welche noch weiterer Untersuchung bedarf.

A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaOx doped with Zr, was deposited and studied. The film’s electrical, chemical, and structural properties were investigated experimentally. The Zr dopant concentration and the thermal treatment condition were studied with respect to gas composition, pressure, temperature, and annealing time. Interface layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al), molybdenum (Mo), molybdenum nitride (MoN), and tungsten nitride (WN), were used in this study. The films were analyzed with ESCA, XRD, SIMS, and TEM. Films were made into MOS capacitors and characterized using I-V and C-V curves. Many promising results were obtained using this kind of high-k film. It is potentially applicable to future MOS devices.

The structures of AgSin (n = 1 ¡V 16) clusters are investigated using first-principles calculations. Our studies suggest that AgSin clusters with n = 7, 10, and 15 are relatively stable isomers and that these clusters prefer to be exohedral rather than endohedral. Moreover, doping leaves the inner core structure of the clusters largely intact. Additionally, the plot of fragmentation energies as a function of silicon atoms shows that the AgSin are favored to dissociate into one Ag atom and Sin clusters. Alternative pathways exist for n > 7 (except n = 11 and 16) in which the AgSin cluster dissociates into a stable Si7 and a smaller fragment AgSin􀀀7. The AgSi11 and AgSi16 cluster dissociates into a stable Si10 and a small fragment AgSi. Lastly, our analysis indicates that doping of Ag atom significantly decreases the gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital for n > 7.

The structures of AuSin (n = 1 - 16) clusters are investigated systematically using first-principles calculations. The lowest energy isomers exhibit preference toward exohedral rather than endohedral structure. Our studies suggest that AuSin clusters with n = 5 and 10 are relatively stable isomers. We found no significant alteration in the cluster¡¦s inner core structure for sizes n= 6, 7, 10, 11, 12, 14, and 15 even in the presence of doping. Moreover, analysis of fragmentation energies is presented in detail. Our studies further indicate that doping of Au atom significantly decreases the gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital for n > 7. Additionally, we report on similar results obtained for CuSin (n = 1 - 16) and AgSin (n = 14, 15, and 16) and compared them with those on AuSin clusters. Next, the low energy isomers for certain sizes of CuSin (n = 10 -16 ) clusters are selected for further optimizations using Gaussian 03 package. We found that for CuSin (n = 12 - 16 ), the endohedral isomers have lower energies than their exohedral counterparts, consistent with a recent study by Janssens et al. [15] in which a similar trend was observed.

Amorphous Silicon(a-Si) films have attracted the attention of several investigators as it is an economical material for devices. One of the problems that is addressed is the doping of these films after they are prepared. In this thesis, we investigated the effects of doping amorphous Sil­icon films(prepared by r.f. sputtering) with Aluminium(Al) by ther­mal diffusion. Amorphous Silicon films have been prepared on glass substrates at optimal process parameters. Then, the a-Si films are coated with Al by vacuum evaporation and subjected to heating in N2 atmosphere in the temperature range 300°C to 600°C for different durations. After etching Al layer, it has been found that some of the films which are heated around 550°C contain filament like polycrystalline regions surrounding islands of a-Si. This structure has been confirmed through Scanning Electron Mi-croscope(SEM) photographs and electrical conductivity measurements. SEM photographs indicate that, bright regions of amorphous mate­rial are surrounded by dark regions of relatively higher conducting boundaries. The electrical conductivity study shows that there is sharp increase in conductivity of Al doped films, which is attributed to the conduct­ing polycrystalUne filament. A simple model has been proposed to explain the variation of con­ductivity of these transformed films, with process parameters and with temperature. Schottky barrier diodes have been fabricated using these trans­formed materials and their characteristics explained.

In this work a p-i-n type heterojunction architecture for organic solar cells is shown, where the active region is sandwiched between two doped wide-gap layers. The term p-i-n means here a layer sequence in the form p-doped layer, intrinsic layer and n-doped layer. The doping is realized by controlled coevaporation using organic dopants and leads to conductivities of 10-4 to 10-5 S/cm in the p- and n-doped wide gap layers, respectively. The conductivity and field effect mobility of single doped layers can be described quantitatively in a self-consistent way by a percolation model. For the solar cells the photoactive layer is formed by a mixture of phthalocyanine zinc (ZnPc) and the fullerene C60 and shows mainly amorphous morphology. The solar cells exhibit a maximum external quantum efficiency of 40% between 630nm and 700nm wavelength. With the help of an optical multilayer model, the optical properties of the solar cells are optimized by placing the active region at the maximum of the optical field distribution. The results of the model are largely confirmed by the experimental findings. The optically optimized device shows an internal quantum efficiency of around 85% at short-circuit conditions and a power-conversion efficiency of 1.7%.