The semiconductor industry provides a host of very challenging problems in production planning and scheduling because of the unique features of the wafer fab. This research addresses the need to develop an approach, which can be used to generate optimal or near-optimal solutions to the scheduling problem of a wafer fab, by using Mathematical Programming for a general case of a wafer fab. The problem is approached in two steps. First, the number of lots of different products to be released into the system during each planning period is determined, such that the total tardiness of the product orders is minimized over the planning horizon. Second, the schedule of these lots is determined so that the cycle time of each lot released into the system is minimized. Thus, the performance measures based both on due dates and cycle time are considered. The lot release, tardiness problem is formulated as an integer linear program, and a 3-phase procedure, which utilizes a variation of the Wilkerson-Irwin algorithm, is developed. The performance of this 3-phase procedure is further improved by using insights from classical scheduling theory. The scheduling problem is formulated as a 0-1 integer linear program. An algorithm is developed for tightening the LP relaxation of this 0-1 integer linear programming model (of the scheduling problem) leading to a better performance of the branch and bound procedure used for its solution. Lagrangian relaxation is applied on a carefully chosen set of constraints in the scheduling problem, and a Lagrangian heuristic is developed for scheduling the jobs in each period of the planning horizon. Several useful insights are developed throughout to further improve the performance of the proposed algorithm. Experiments are conducted for both the tardiness and the scheduling problems. Five experiments are conducted for the tardiness problem. Each experiment has a different combination of number of products, machines, and work orders in a small sized wafer fab (2 to 6 products, 8 to 10 station families, 15 to 30 workstations, 9 to19 work orders, and 100 to 250 lots per work order). The solutions obtained by the 3-phase procedure are compared to the optimal solutions of the corresponding tardiness problems, and the tardiness per work order for the 3-phase procedure is 0% to 25% greater than the optimal solution. But the time required to obtain the optimal solution is 22 to 1074 times greater than the time required to obtain the solution through the 3-phase procedure. Thus, the 3-phase procedure can generate almost optimal solutions and requires much smaller computation time than that required by the optimal solution. Four experiments are conducted to test the performance of the scheduling problem. Each experiment has a different combination of number of products, machines, routes, bottleneck stations, processing times, and product mix entering the system each day in a small sized wafer fab (2 products, 8 station families, 18 workstations, and 8 to 10 lots released per day into the system). The solution quality of the schedule generated by the Lagrangian heuristic is compared to the solution provided by the standard dispatching rules available in practice. In each experiment, the cycle time of a product for each dispatching rule is divided by the best cycle time for that product over all the dispatching rules in that experiment. This ratio for the Lagrangian heuristic in each experiment and over all the experiments varies from 100% to 104%. For the standard dispatching rules, this ratio ranges from 100% to 120% in each experiment and also over all the experiments. The average of the ratio over all the experiments is the least for the Lagrangian heuristic. This indicates that for the experiments conducted, the Lagrangian heuristic consistently provides a solution that is, or is close to, the best solution and, hence, quite competitive when compared to the standard dispatching rules. / Master of Science

This thesis presents methods for fabricating MicroElectroMechanical System (MEMS) actuators and high-flow gas microvalves using wafer-level integration of Shape Memory Alloys (SMAs) in the form of wires and sheets. The work output per volume of SMA actuators exceeds that of other microactuation mechanisms, such as electrostatic, magnetic and piezoelectric actuation, by more than an order of magnitude, making SMA actuators highly promising for applications requiring high forces and large displacements. The use of SMAs in MEMS has so far been limited, partially due to a lack of cost efficient and reliable wafer-level integration approaches. This thesis presents new methods for wafer-level integration of nickel-titanium SMA sheets and wires. For SMA sheets, a technique for the integration of patterned SMA sheets to silicon wafers using gold-silicon eutectic bonding is demonstrated. A method for selective release of gold-silicon eutectically bonded microstructures by localized electrochemical etching, is also presented. For SMA wires, alignment and placement of NiTi wires is demonstrated forboth a manual approach, using specially built wire frame tools, and a semiautomatic approach, using a commercially available wire bonder. Methods for fixing wires to wafers using either polymers, nickel electroplating or mechanical silicon clamps are also shown. Nickel electroplating offers the most promising permanent fixing technique, since both a strong mechanical and good electrical connection to the wire is achieved during the same process step. Resistively heated microactuators are also fabricated by integrating prestrained SMA wires onto silicon cantilevers. These microactuators exhibit displacements that are among the highest yet reported. The actuators also feature a relatively low power consumption and high reliability during longterm cycling. New designs for gas microvalves are presented and valves using both SMA sheets and SMA wires for actuation are fabricated. The SMA-sheet microvalve exhibits a pneumatic performance per footprint area, three times higher than that of previous microvalves. The SMA-wire-actuated microvalve also allows control of high gas flows and in addition, offers benefits of lowvoltage actuation and low overall power consumption. / QC 20120514

L'objectif de ce travail de thèse a été d'évaluer, à partir d'outils de caractérisation électrique (spectroscopie d'impédance basse fréquence et courants thermo-stimulés), l'impact des étapes de polissage mécanochimique (CMP) et de recuits thermiques sur les propriétés diélectriques de matériaux utilisés pour les dernières générations de circuits intégrés. Une première partie est focalisée sur le matériau SiOCH poreux déposé par voie chimique « en phase vapeur » assisté par plasma (PECVD) suivant une approche porogène (p=26%, d=2nm et er=2,5). Son intégration dans les technologies 45nm nécessite l'utilisation d'un procédé de ‘CMP directe' qui induit une dégradation des propriétés isolantes attribuée à l'adsorption de surfactants et de molécules d'eau. L'analyse diélectrique sur une large gamme de fréquence (10-1Hz- 105Hz) et de température (-120°C -200°C) a mis en évidence plusieurs mécanismes de relaxation diélectrique et de conduction liés à la présence de molécules nanoconfinées (eau et porogène) dans les pores du matériau. L'étude de ces mécanismes a permis d'illustrer le phénomène de reprise en eau du SiOCH poreux ainsi que d'évaluer la capacité de traitements thermiques à en restaurer les performances. Une seconde partie concerne l'étude d'une résine époxy chargée avec des nanoparticules de silice, utilisée en tant que ‘wafer level underfill' dans les technologies d'intégration 3D. Les analyses en spectroscopie d'impédance ont montré que l'ajout de nanoparticules de silice s'accompagne d'une élévation de la température de transition vitreuse et de la permittivité diélectrique, ainsi que d'une diminution de la conductivité basse fréquence. L'autre contribution majeure des mesures diélectriques a été de montrer qu'un refroidissement trop rapide de la résine à l'issue de la réticulation était responsable d'une contrainte interne qui pourra occasionner des problèmes de fiabilité pour l'application. / The aim of the thesis was to investigate, by electrical means (dielectric spectroscopy and thermally stimulated current), the impact of the chemical-mechanical polishing process and of thermal treatments on the dielectric properties of materials used in state-of-the-art Integrated Circuit (IC) technologies. A first part focuses on the nanoporous SiOCH (p=26%, e=2 nm and er=2,5) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) using a porogen approach. After undergoing a process of direct CMP for its integration in the 45 nm node technology and beyond, those films experience a degradation of the insulating properties due to the adsorption of water and surfactants. A dielectric analysis performed on a wide range of frequency (10-1Hz - 105Hz) and temperature (-120°C - 200°C) exhibited many dielectric relaxation and conduction mechanisms due to molecules (water and porogen) nano-confined in pores. The phenomenon of water uptake of the porous SiOCH has been enlightened and the efficiency of thermal treatment to restore its performances has been evaluated through the study of these mechanisms. A second part deals with an epoxy resin filled with nano-particles of silica used as ‘wafer level underfill' for the 3D integration. Impedance spectroscopy showed that the addition of nano-particles induces an increase in the glass transition temperature and dielectric permittivity, as well as a decrease of the low frequencyconductivity. Furthermore, the dielectric measurements showed that a fast cool down of the resin after the cross-linking stage give rise to internal stresses which could potentially lead to reliability issues.

Three experiments had been carried out in which the first one was a metabolism test, by the traditional method, to evaluate the nutritional value of the passion fruit residue in different substitution levels in diet and in two broiler chicken ages. There was a significant difference between ages within all residue replacement levels. For AME, AMEn, CAMDM, MCCP and CAMGE the mean of chicken aged between 10 to 17 days was higher than those with age between 1 to 8 days within all levels of residue replacement. The second and third experiments aimed to evaluate the nutritional value of the biscuit residue with the same substitution levels and ages of the first experiment. It was observed that the older birds had higher mean values for AME, AMEn, CAMDM, MCCP and CAMGE at all levels of residue replacement. The fourth experiment aimed to evaluate the effect of the passion fruit residue on the broilers carcass performance and yield, 200 birds were distributed in a completely randomized experimental design with five treatments (0%, 4%, 8%, 12% and 16% inclusion of the residue in the diet) and four replicates of 10 birds.The residues inclusion levels influenced the consumption of feed at the ages of 1 to 7 days and 8 to 14 days. In the other periods the consumption was not affected. Weight gain where only affected in the first two weeks, with negative linear effects, in which at every 1% of inclusion the weight gain ration decrease 2.3875 g/ bird / week and 2.1830 g / bird / week, respectively, for the first and second week. Feed conversion worsened linearly up to 21 days and in the total period of 42 days. There was a negative influence of inclusion levels on absolute and relative thigh weight and positive for absolute and relative torso weight. There was no effect on the absolute weights and yields of the edible viscera. The passion fruit and biscuit residue presented better nutritional values at the age of 10 to 17 days, with good potential for its use in the broilers diet. Passion fruit residue can be used up to 16% inclusion in the diet in the period from 22 to 40 days of age without affecting the productive performance of broiler chickens and in the period from 1 to 42 days without damaging the carcass yield. / Foram realizados 4 experimentos em que o primeiro foi um ensaio de metabolismo, pelo método tradicional, que objetivou avaliar o valor nutricional do resíduo do maracujá em diferentes níveis de substituição na dieta e em duas idades de frangos de corte. Houve diferença significativa entre as idades dentro de todos os níveis de substituição do resíduo. Para a EMA, EMAn, CMMS, CMPB, CMEB), a média da idade dos frangos de 10 a 20 dias foi superior à média da idade de 1 a 11 dias dentro de todos os níveis de substituição do resíduo. O segundo e terceiro experimentos objetivaram avaliar o valor nutricional do resíduo do biscoito com os mesmos níveis de substituição e idades do primeiro experimento, tendo sido observado que as aves mais velhas apresentaram maiores médias para as variáveis EMA, EMAn, CMMS, CMPB, CMEB, em todos os níveis de substituição do resíduo. O quarto experimento objetivou avaliar o efeito da utilização do resíduo de maracujá sobre o desempenho e rendimento de carcaça de frangos de corte. 200 aves foram distribuídas em um delineamento experimental inteiramente casualizado, com cinco tratamentos (0%,4%,8%,12% e 16% de inclusão do resíduo na dieta) e quatro repetições de 10 aves. Os níveis de inclusão do resíduo influenciaram no consumo de ração nas idades de 1 a 7 dias e de 8 a 14 dias. Nos demais períodos o consumo não foi afetado. Para o ganho de peso só houve efeito nas duas primeiras semanas, com efeito linear negativos, em que a cada 1% de inclusão, o ganho de peso diminuiu em 2,3875 g/ave/semana e de 2,1830 g/ave/semana, respectivamente, para a primeira e segunda semana. A Conversão Alimentar piorou linearmente até os 21 dias e no período total de 42 dias. Houve influência negativa dos níveis de inclusão sobre o peso absoluto e relativo de coxa e positiva para o peso absoluto e rendimento de dorso. Não houve efeito para os pesos absolutos e rendimentos das vísceras comestíveis. O resíduo do maracujá e do biscoito apresentaram melhores valores nutricionais na idade de 10 a 17 dias, com bom potencial para a sua utilização na dieta de frangos de corte. O resíduo de maracujá pode ser utilizado em até 16% de inclusão na dieta no período de 22 a 40 dias de idade sem prejuízo no desempenho produtivo de frangos de corte e no período de 1 a 42 dias sem prejuízo no rendimento de carcaça.

La constante amélioration des technologies silicium permet aux transistors bipolaires à hétérojonction (HBT) SiGeC (Silicium-Germanium : Carbone) de concurrencer les composants III-V pour les applications millimétriques et sous-THz (jusqu’à 300GHz). Le cycle de développement de la technologie (caractérisation-modélisation-conception-fabrication) nécessite plusieurs itérations, entraînant des coûts élevés. De plus, les méthodologies de mesure doivent être réévaluées et ajustées pour adresser des fréquences plus élevées. Afin de réduire le nombre d’itérations et de permettre la montée en fréquence de la mesure, un travail de fond sur la première étape, la caractérisation, s’avère indispensable.Pour répondre à cette exigence, une description et une étude des instruments de mesure (VNA) est réalisée dans un premier temps. Un état de l’art des méthodes de calibrage permet de choisir la solution la plus pertinente pour la calibration sur puce valable dans la gamme de fréquences sous-THz. Ensuite, après avoir relevé plusieurs défauts dans la méthode choisie (à savoir la méthode Thru-Reflect-Line : TRL), des solutions sont proposées concernant la modification des calculs des coefficients d’erreur et également en modifiant les standards utilisés durant le calibrage. Finalement, une étude sur les méthodes d’épluchage est réalisée. Une amélioration est proposée par la modification de deux standards évitant le principal problème de l’état de l’art, la surcompensation des composants parasites. / The continuous improvement in Silicon technologies allows SiGeC (Silicon-Germanium-Carbon) heterojunction bipolar transistors (HBT) to compete with III-V components for millimeter wave and sub-THz (below 300GHz) applications. The technology development cycle (characterization, modeling, design and fabrication) needs several iterations resulting in high costs. Furthermore, the measurement methodologies need to be re-assessed and modified to address higher measurement frequencies. In order to reduce the number of iterations and to allow reliable measurement in the sub-THz band, the characterization procedure has been revisited.First, a description and investigation of the measurement instrument (VNA) has been made. After exploring all possible calibration methods, the best candidate for an “on-wafer” calibration for the sub-THz frequency range has been selected. Then, after analyzing the limits of the chosen calibration method (Thru-Reflect-Line: TRL), workarounds are proposed, by modification of the errors coefficients calculation and by changing the standards used during the calibration process. At last, a study concerning the de-embedding methods is carried out. It is shown, that using two new standards helps to reduce the over-compensation of parasitic components.

La miniaturisation et la complexification croissante des composants microélectroniques induit une sensibilisation et une fragilisation accrue des composants vis-à-vis des contaminations présentes dans les zones de productions appelées “salles blanches”. Dans ces espaces, le contrôle actuel de la contamination organique n’est pas suffisant puisqu’il ne permet pas d’éviter la contamination de surface des plaquettes de silicium et des optiques des robots de production utilisés pour la photolithographie. Un contrôle accru des concentrations des contaminants organiques dans les atmosphères des salles blanches devient donc nécessaire et de nouvelles méthodes analytiques doivent être développées et validées. Dans le cadre de ce travail, des méthodes d’analyse ont été développées et validées afin de disposer d’une gamme d’outils permettant un suivi rigoureux des contaminations. Ces outils permettent d’identifier et de quantifier les contaminations surfaciques des plaquettes de silicium par des composés organiques semi-volatils (phtalates et organophosphorés) mais aussi de déterminer les concentrations de composés organiques volatils présents dans l’atmosphère des salles blanches. Ces méthodes font appel aux technologies du WOS/ATD-GC-MS « Wafer Outgassing System/Automated Thermal Desorber–Gas Chromatography–Mass Spectrometry » et de la DART-ToF-MS « Direct Analysis in Real Time-Time of Flight–Mass Spectrometry » pour les analyses de surfaces et au PTR-ToF-MS « Proton Transfer Reaction – Time of Flight - Mass Spectrometry » pour l’analyse de l’atmosphère. / The recent advances in the miniaturization and complexification of microelectronic components induce an increase in the sensitivity of these components regarding the organic contamination present in the production zone called “clean room”. Although, the control of organic contamination in the clean room is very rigorous it does not avoid the contamination of silicon wafer surfaces and robot lenses used in the photolithography process. The later implies that new analytical methodologies should be developed and validated. In this work, analytical methods were developed and validated in order to have a panel of tools which allows careful monitoring of organic contaminants. These tools allow the identification and quantitation of the contamination of silicon wafer surface by semi-volatiles organic compounds (phthalates and organophosphates) and the determination of volatile organic compounds concentrations in the clean room atmosphere. These methods uses the WOS/ATD-GC-MS « Wafer Outgassing System/Automated Thermal Desorber–Gas Chromatography–Mass Spectrometry » technology and the DART-ToF-MS « Direct Analysis in Real Time-Time of Flight–Mass Spectrometry » technology for wafer surface analysis and the PTR-ToF-MS « Proton Transfer Reaction – Time of Flight - Mass Spectrometry » technology for gas-phase analysis.

La miniaturisation des systèmes optiques est un domaine de recherche qui suscite un grand intérêt scientifique actuellement. En effet, moins volumineux et moins chers, ils peuvent prétendre à être diffusés dans des applications diverses. L'objectif de cette thèse est de concevoir des systèmes d'imagerie extrêmement compacts, intégrés au plus près du détecteur infrarouge refroidi, et idéalement solidaires de celui-ci. Des travaux de recherche sont actuellement menés pour miniaturiser les systèmes optiques : moins volumineux et moins chers, ils peuvent prétendre à être diffusés dans des applications diverses. L'objectif de cette thèse est de concevoir des systèmes d'imagerie extrêmement compacts, intégrés au plus près du détecteur infrarouge refroidi, et idéalement solidaires de celui-ci. J'ai tout d'abord mis en évidence des stratégies pour la simplification et la miniaturisation des systèmes optiques. Parmi elles, les approches menant à des systèmes multivoies semblent être les plus prometteuses pour concevoir des systèmes à la fois compacts et performants. J'ai alors proposé deux architectures multivoies simples, compactes et intégrées au plus près du détecteur infrarouge. La première, de champ d'observation égal à 120°, intègre une matrice de microlentilles à quelques centaines de micromètres seulement du détecteur infrarouge : elle est qualifiée de caméra sur puce. Des défis technologiques ont dû être relevés pour réaliser ce composant. J'ai développé un algorithme de reconstruction d'images et évalué expérimentalement les performances de la caméra. Ce système produit, après traitements, une image échantillonnée au pas de 7,5 µm. Cette valeur est deux fois meilleure que celle qui pourrait être obtenue avec une caméra monovoie classique, associée à un détecteur infrarouge à l'état de l'art actuel, avec un pas pixel de 15 µm. J'ai contribué à la réalisation du second système en développant une méthode originale et simple pour en fabriquer les matrices de microlentilles. Cette technique consiste à mouler par compression de la poudre de bromure de potassium à température ambiante.Ces travaux ouvrent la voie à une nouvelle génération de détecteurs infrarouges, qui intègrent une fonction d'imagerie. / Miniaturizing optical systems is a research area of great interest nowadays: if they were smaller and cheaper, optical systems could be widespread in many applications. This work aims at designing very compact optical systems for imagery applications, which could be integrated near the infrared cryogenic detector and ideally directly on it.First, I have presented original design strategies to simplify and miniaturize optical systems. Approaches which lead to multichannel systems seem to be the most interesting ones to design compact and effective systems. Then, I have proposed two multichannel optical architectures, which are simple, compact, and integrated near the infrared detector. The first camera, which has a field of view equal to 120°, integrates a microlens array at a few hundreds of micrometers only of the infrared detector: it is called a wafer-level camera. Technological challenges have been overcome to manufacture this component. I have developed an image processing method, and assessed the characteristics of the camera experimentally. This system samples the final image with a pitch equal to 7,5 µm. This value is two times better than the one which could be obtained by using a one-channel camera associated with a state-of-the-art infrared detector, with a pixel pitch equal to 15 µm. In order to manufacture the second architecture, I have developed an original and simple method to obtain the microlens arrays, by compression molding of Potassium Bromide powder at ambient temperature. This work gives some elements to design a new generation of infrared detectors with an imagery function.

Les micro-dispositifs comportant des structures libérées et mobiles sont d’une part très sensibles aux variations de leur environnement de travail, et d’autre part très fragiles mécaniquement. L’étape de découpe du substrat en plusieurs puces est extrêmement agressive et peut entrainer la destruction totale des micro-dispositifs. L’encapsulation avant la découpe va alors prémunir les micro-composants lors de cette étape critique et continuer à garantir leur bon fonctionnement tout au long de leur utilisation en conservant la stabilité et la fiabilité de leur performance. Le conditionnement doit en outre interfacer les micro-dispositifs encapsulés avec le monde macroscopique en vue de leur utilisation. De nombreux procédés de fabrication ont déjà été développés pour l’élaboration d’un conditionnement. C’est le cas de l’encapsulation puce par puce, substrat - substrat, par couche sacrificielle par exemple. Ils sont toutefois très contraignants (encombrement, compatibilité, coût, …). Nous avons étudié, au cours de cette thèse, un procédé innovant de conditionnement hermétique par transfert de film utilisant une couche à adhésion contrôlée. Cette technologie consiste à élaborer des capots protecteurs sur le substrat moule puis à les reporter collectivement pour encapsuler les micro-dispositifs. Ce procédé est totalement compatible avec un interfaçage électrique de composant qui traverse les cordons de scellement ou le capot. Ce procédé nécessite la maîtrise de la croissance de divers films (C, CxFy, Ni, AlN, parylène, BCB, Au-In) et permet d’obtenir des boitiers étanches, hermétiques et robustes qui devraient très rapidement pouvoir être utilisés pour le conditionnement de MEMS. / Micro-devices which are composed of free standing or mobile structures are very sensitive to the working condition and mechanically very fragile. The saw dicing steps is very aggressive and it can destroy the micro-devices. Packaging will prevent the micro devices from any damage during this critical step and also take care of it all along its life by controlling its performance stability and reliability. Moreover, the suited devices use needs a connection to the macroscopic word through the packaging. Many packaging process flow has already developed such as pick and place, wafer to wafer, thin film packaging with a sacrificial layer. Nevertheless, they have got many drawbacks (footprint, process compatibility, cost …). We have developed an attractive wafer level hermetic packaging process by film transfer technology during this these. It relies on a transferred molded film cap from a carrier wafer to the donor wafer. Electrical path can be done through the cap or the bonding ring. Cap manufacturing need a high layer growth skill for example in C, CxFy, Ni, AlN, parylène, BCB, Au-In films to make robust, hermetic encapsulation which should be soon used for MEMS packaging.

Une technologie d’élaboration de micro et nanosystèmes idéale devrait permettre l’intégration de différents matériaux (magnétiques, piézoélectriques, polymères, etc.) ou structures (composants optiques, mécaniques, optoélectroniques, etc.) de nature fortement hétérogène dans le but d’obtenir des systèmes multifonctionnels complexes éventuellement encapsulés. Un moyen de contourner les différents problèmes d’incompatibilité, liés aux mélanges des technologies de fabrication, est de transférer les différents films de matériaux ou composants d’un substrat donneur, sur lequel ils ont été préalablement élaborés, vers le substrat comportant le système visé Dans cette optique, un procédé de transfert de film à basse température a été développé. Ce procédé repose sur le contrôle de l’adhésion d’un film mince de nickel préformé, à partir d’un substrat dit « donneur », sur une couche à adhésion contrôlée de nature carbonée ou fluorocarbonée. La libération mécanique du film, sur un substrat dit « cible », est assurée par une soudure adhésive via des cordons de scellement en BCB. Grâce à sa facilité de mise en œuvre et aux faibles températures requises pour le scellement des substrats, ce procédé a permis de transférer des microstructures en nickel sur des substrats de silicium, de verre ainsi que sur des substrats Kapton souples. L’emploi d’une soudure BCB assure l’isolation thermique et électrique des microstructures sur le substrat cible. La versatilité du procédé a été prouvée par l’empilement de microstructures suspendues et par le transfert de divers matériaux. Ce procédé est très prometteur pour de nombreuses applications et apporte de nouvelles perspectives quant à l’intégration hétérogène 3D de micro et nanosystèmes. / Nowadays, micro and nano systems fabrication technologies should allow the integration of any passive or active materials (magnetic, piezoelectric, polymers, etc.) in various forms (films, micro/nanostructures, etc.) to build and/or package highly integrated multi-functional systems. A generic technology able to solve incompatibility issues related to the mixing of different technologies is pattern or device transfer by wafer bonding from a donor wafer to the target substrate. Ideally, such a process should be versatile, low cost, selective and over all should involve minimum interaction and processing steps on the target wafer. From this perspective, a low cost and low temperature MEMS transfer process has been developed. The process is based on adhesion control of molded electroplated Ni microstructures on the donor wafer by using plasma deposited fluorocarbon films and sputtered carbon films (for high temperature materials). Adhesive bonding of the microstructures on the target wafer using BCB sealing enables mechanical tearing off from the donor wafer. This proposed process has allowed us to realize various Ni patterns on Si, Pyrex glass wafers and Kapton foils. Furthermore, BCB sealing leads to freestanding microstructures which are thermally and electrically isolated from the target substrate. Thanks to multiple transfers, Ni stacked microstructures have been achieved. The transfer of various materials has been demonstrated for simple and complex structures. This transfer process is very promising for numerous applications and brings new perspectives towards 3D microfabrication and heterogeneous integration of MEMS/NEMS.

Neste trabalho foi estudado o desenvolvimento de uma superfície modelo de silício monocristalino, SiO2/Si, modificada com organossilanos derivados de N-heterocíclicos que permitisse a imobilização de um complexo de coordenação, FeTIM. Estas superfícies modificadas poderão ser empregadas em estudos de reatividade frente a analitos de interesse, como o NO. Sob esse aspecto, a síntese desses novos silanos, contendo N-heterocíclicos, e o desenvolvimento de uma metodologia de formação dos filmes finos automontados, sobre a superfície de SiO2/Si, tornou-se de grande relevância na aplicabilidade deste trabalho. Para a obtenção dessas superfícies, fez-se necessária a compreensão dos parâmetros de formação dos filmes de silanos. Os parâmetros estudados foram os efeitos do tempo de adsorção, da concentração da solução dos silanos, da polaridade do solvente e do tamanho da cadeia alquílica do silano no processo de formação dos filmes. Deste modo, foi possível inferir sobre as alterações na morfologia e na estrutura química dos filmes formados, através de medidas de Espectroscopia de Fotoelétrons excitados por Raios-X (XPS), Microscopia de Força Atômica (AFM) e Microscopia Eletrônica de Varredura (MEV). A imobilização do complexo de FeTIM sobre a superfície organomodificada foi comprovada pela variação da linha de fotoemissão do Fe 2p nas medidas de XPS. / This work describes the study of model surfaces on oxidized silicon wafer, SiO2/Si, modified with N-heterocycles rings, that allows the grafting of a macrocycle iron complex, FeTIM, that could be used in reactivity studies, with biologically relevant molecules, as nitrogen monoxide (NO). On this way, the synthesis of these silanes and a new methodology of the formation of self-assembled monolayers had become a relevant question on this work applicability. These thin films contain silanes bearing nitrogenated Lewis bases on silicon surfaces. In order to obtain these modified surfaces, it was necessary a comprehensive study of the adsorption parameters of the thin films. The parameters studied were the effect of: adsorption time, the solution concentration, the role of the solvents polarity and the chain length alkylsilanes in the film formation. Then, it was possible to infer about the film\'s morphology differences and chemical structures by the XPS, AFM and MEV measurements. X-ray photoemission lines of Fe 2p were used to probe the iron chemical environment in the chemically adsorbed macrocycles complexes.