Simultaneously achieving high-sensitivity and a large resonance frequency of micromachined accelerometers is difficult because of the inherent trade-off between the two. In this thesis, we present a mechanical displacement-amplifying technique that is amenable to micromachining to enhance sensitivity without compromising on the resonance frequency and cross-axis sensitivity. Depending on the requirements of sensitivity alone or sensitivity and resonance frequency, Displacement-amplifying Compliant Mechanisms (DaCMs) are designed using the selection map-based technique, which indicates the limits of what is possible for given specifications on size and microfabrication. In order to prove the benefits of a DaCM, we modified the designs of two very sensitive capacitive micromachined accelerometers from the literature by incorporating DaCMs and showed that, within the same footprint on the chip, the displacement sensitivity could be enhanced by more than 60% while the resonance frequency was also improved by more than 30%. As the focus of the thesis is to explore the integration of DaCMs into accelerometers, the analytical, computational, and practical aspects are discussed in detail. Both single and dual axis in-plane accelerometers are considered. The fabrication processes used are Silicon-on-Insulator Multi-user MEMS Processes (SOIMUMPs) and a customized Silicon-on-Insulator (SOI) based process. The fabricated accelerometers are packaged and brought to the product form. They were tested at the die level as well as in the packaged form. Under dynamic conditions, the measured amplification factor of the fabricated single-axis in-plane accelerometer was observed to be 11. The overall dimension of the accelerometer was 4.25 mm × 1.25 mm. The first in-plane natural frequency of the fabricated accelerometer was found to be 6.25 kHz. The voltage sensitivity of the packaged accelerometer with the DaCM measured 26.7 mV/g at 40 Hz with differential capacitance sensitivity of 3926 ppm/g around the base capacitance of 0.75 pF. The fabricated dual-axis accelerometer has a special configuration of twelve folded-beam suspension blocks that de-couple any displacements along the two in-plane orthogonal axes. The decoupling feature is retained even after adding the DaCMs along both the axes. The total device size was 8.6 mm × 8.6 mm. The device was also fabricated and packaged inside a ceramic flat-pin package using hybrid die-to-die wire-bonding. Die-level dynamic characterization showed that the average geometric advantage achieved using the DaCMs is 6.2 along both the in-plane axes. The measured axial voltage sensitivity of about 580 mV/g for both the axes was achieved with a cross-axial sensitivity of less than 2% and a natural frequency of 920 Hz. The static capacitance sensitivity was found to be 0.296 × 106 ppm/g with a base capacitance of 0.977 pF. Also presented in this work is a wide-band dual-axis accelerometer without an amplifying mechanism. Its first two in-plane modal frequencies measured 14.2 kHz. The measured sensitivity of the packaged accelerometer along both the axes of the device was found to be 62 mV/g at 200 Hz. Aiming at towards cost-effective accelerometers for small-volume markets, we also developed a single-axis and two dual-axis meso-scale spring-steel in-plane accelerometers equipped with Allegro A1395 linear Hall-effect sensors for sensing the displacement of the proof-mass. The single-axis in-plane meso-scale accelerometer also contains a DaCM. It is observed through simulation that the single-axis design with a DaCM is 39% more sensitive and has 41% more bandwidth compared to a single-axis design without a DaCM. The measured sensitivity of the fabricated single-axis spring-steel accelerometer with a DaCM was found to be 71.4 mV/g with a minimum resolvable acceleration of 14 milli-g. The unique features of the first generation of dual-axis accelerometers are that a rechargeable Li-ion battery adds to the proof-mass. It also contains a de-coupling mechanism that can decompose any planar acceleration into its axial components. The second generation of dual-axis accelerometers is more compact in size. All the mechanical elements of the accelerometers are made of EN J42/AISI 1080 spring steel foil machined using Wire-cut Electro-Discharge- Machining. The measured sensitivity of the first generation of dual-axis meso-scale accelerometers is 78 and 108 mV/g along the X and Y axes whereas the second generation device exhibits a sensitivity of 40 mV/g for both the axes. The thesis concludes that the sensitivity of a displacement-based sensor can be improved using a suitably designed DaCM without compromising the resonance frequency and hence the bandwidth. Furthermore, the work describing the development of meso-scale accelerometers also establishes spring steel as a viable material for meso-scale applications.

Submitted by JOSIANE SANTOS DE OLIVEIRA (josianeso) on 2019-03-25T11:56:58Z No. of bitstreams: 1 Jeferson Cardoso do Rosario_.pdf: 3523684 bytes, checksum: 6d033c623e7ef74a93692efd6ca37e8e (MD5) / Made available in DSpace on 2019-03-25T11:56:58Z (GMT). No. of bitstreams: 1 Jeferson Cardoso do Rosario_.pdf: 3523684 bytes, checksum: 6d033c623e7ef74a93692efd6ca37e8e (MD5) Previous issue date: 2019-01-18 / Nenhuma / O traumatismo cranioencefálico (TCE) é atualmente a terceira maior causa de óbitos no âmbito mundial. Estudos recentes têm demonstrado que a monitorização de pressão intracraniana (PIC), como forma de cálculo da pressão de perfusão cerebral (PPC) é uma ferramenta importante para avaliação do fluxo sanguíneo cerebral (FSC), provocando sensível redução nas taxas de mortalidade. Além do TCE, outras patologias ou situações neurocirúrgicas tem utilizado a técnica de monitorização de PIC. A monitorização desse parâmetro foi proposta já na década de 50, onde um tubo com fluido em contato com o líquido cefalorraquidiano (LCR) era introduzido no espaço intracraniano e conectado a um transdutor de pressão externo. Com a evolução da indústria microeletrônica e dos sistemas microeletromecânicos, foi possível colocar os transdutores na ponta do cateter, permitindo uma monitorização menos invasiva, com menos riscos de infecções. Os cateteres atuais com micro transdutor na ponta podem ser divididos em três grupo: straingauge, fibra óptica e pneumático. Cada grupo possui suas características, entretanto o primeiro tem se demonstrado como solução mais robusta e confiável, com boa relação custo benefício. No presente trabalho foi proposto o desenvolvimento de um cateter implantável de monitorização de pressão intracraniana do tipo micro transdutor strain-gauge. Foram construídos protótipos funcionais e submetidos a ensaios de desempenho, especificados em norma técnica para monitorização de pressão sanguínea, a influência da temperatura na medição de pressão, bem como a exatidão das medições. Os processos empregados no trabalho são utilizados comumente na indústria de encapsulamento de semicondutores, porém foram levadas em consideração as especificidades da aplicação, adequando as técnicas disponíveis às geometrias e materiais empregados, considerando a necessidade de utilização de materiais biocompatíveis. / The traumatic brain injury (TBI) is nowadays the third cause of death in the world. Recent studies have shown the intracranial pressure (ICP) monitoring as an important tool for cerebral perfusion pressure (CPP) calculation and cerebral blood flow (CBF) assestment, reducing significantly the mortality statistics. Besides TBI, several others pathologies and neurosurgery conditions have been using the ICP monitoring technique. The proposal of ICP monitoring first appeared on the 50’s, where a tube fulfilled with fluid in contact with cerebrospinal fluid (CSF) was introduced into the intracranial space and connected to an external pressure transducer. With the waves of the microelectronics and microelectromechanical systems (MEMS) industry evolution, it was possible to put the transducer and all the electronics inside the catheter tip, allowing a less invasive monitoring, decreasing the risk of infection. The state of art catheters with micro transducer on the tip can be divided into three groups: strain-gauge, optical fiber and pneumatic. Each group has it’s own characteristics, however the first has been demonstrated as the rugged solution, being reliable, cost effective and with good accuracy. In the present work, it was proposed the development of an strain-gauge micro transducer implantable catheter for intracranial pressure monitoring. Functional prototypes were built and submitted to performance tests, according to the technical standards in the medical equipment area, the temperature influence over the pressure measurements was evaluated, as well as the accuracy. The adopted processes are commonly used in the semiconductor packaging industry, however it was considered the application special requirements, adapting the processes to the geometry and materials used, considering the needs of biocompatible materials.

This thesis presents methods for the wafer-level integration of shape memory alloy (SMA) and electrostatic actuators to functionalize MEMS devices. The integration methods are based on heterogeneous integration, which is the integration of different materials and technologies. Background information about the actuators and the integration method is provided. SMA microactuators offer the highest work density of all MEMS actuators, however, they are not yet a standard MEMS material, partially due to the lack of proper wafer-level integration methods. This thesis presents methods for the wafer-level heterogeneous integration of bulk SMA sheets and wires with silicon microstructures. First concepts and experiments are presented for integrating SMA actuators with knife gate microvalves, which are introduced in this thesis. These microvalves feature a gate moving out-of-plane to regulate a gas flow and first measurements indicate outstanding pneumatic performance in relation to the consumed silicon footprint area. This part of the work also includes a novel technique for the footprint and thickness independent selective release of Au-Si eutectically bonded microstructures based on localized electrochemical etching. Electrostatic actuators are presented to functionalize MEMS crossbar switches, which are intended for the automated reconfiguration of copper-wire telecommunication networks and must allow to interconnect a number of input lines to a number of output lines in any combination desired. Following the concepts of heterogeneous integration, the device is divided into two parts which are fabricated separately and then assembled. One part contains an array of double-pole single-throw S-shaped actuator MEMS switches. The other part contains a signal line routing network which is interconnected by the switches after assembly of the two parts. The assembly is based on patterned adhesive wafer bonding and results in wafer-level encapsulation of the switch array. During operation, the switches in these arrays must be individually addressable. Instead of controlling each element with individual control lines, this thesis investigates a row/column addressing scheme to individually pull in or pull out single electrostatic actuators in the array with maximum operational reliability, determined by the statistical parameters of the pull-in and pull-out characteristics of the actuators. / QC20100729

The objective of the proposed research is to design, implement, and characterize low-cost, lightweight front-end components and subsystems in the microwave domain through innovative packaging architectures for remote sensing applications. Particular emphasis is placed on system-on-package (SoP) solutions implemented in organic substrates as a low-cost alternative to conventional, expensive, rigid, and fragile radio- frequency substrates. To this end, the dielectric properties of organic substrates RT/duroid 5880, 6002 and 6202 are presented from 30 GHz to 70 GHz, covering most of the Ka and V radar bands, giving also a thorough insight on the uncertainty of the microstrip ring resonator method by means of the Monte Carlo uncertainty analysis. Additionally, an ultra-thin, high-power antenna-array technology, with transmit/ receive (T/R) functionality is introduced for mobile applications in the X band. Two lightweight SoP T/R array panels are presented in this work using novel technologies such as Silicon Germanium integrated circuits and microelectromechanical system switches on a hybrid organic package of liquid crystal polymer and RT/duroid 5880LZ. A maximum power of 47 dBm is achieved in a package with a thickness of 1.8 mm without the need of bulky thermal management devices. Finally, to address the thermal limitations of thin-film substrates of interest (liquid crystal polymer, RT/duroid 6002, alumina and Aluminum Nitride), a thermal assessment of microstrip structures is presented in the X band, along with the thermal characterization of the dielectric properties of RT/duroid 6002 from 20 C to 200 C and from 30 GHz to 70 GHz. Additional high-power, X-band technologies presented in this work include: a novel and compact topology for evanescent mode filters, and low-profile Wilkinson power dividers implemented on Aluminum Nitride using Tantalum Nitride thin-film resistors.

Frequency reference oscillator is a critical component of modern radio transceivers. Currently, most reference oscillators are based on low-frequency quartz crystals that are inherently bulky and incompatible with standard micro-fabrication processes. Moreover, their frequency limitation (<200MHz) requires large up-conversion ratio in multigigahertz frequency synthesizers, which in turn, degrades the phase-noise. Recent advances in MEMS technology have made realization of high-frequency on-chip low phase-noise MEMS oscillators possible. Although significant research has been directed toward replacing quartz crystal oscillators with integrated micromechanical oscillators, their phase-noise performance is not well modeled. In addition, little attention has been paid to developing electronic frequency tuning techniques to compensate for temperature/process variation and improve the absolute frequency accuracy. The objective of this dissertation was to realize high-frequency temperature-compensated high-frequency (>100MHz) micromechanical oscillators and study their phase-noise performance. To this end, low-power low-noise CMOS transimpedance amplifiers (TIA) that employ novel gain and bandwidth enhancement techniques are interfaced with high frequency (>100MHz) micromechanical resonators. The oscillation frequency is varied by a tuning network that uses frequency tuning enhancement techniques to increase the tuning range with minimal effect on the phase-noise performance. Taking advantage of extended frequency tuning range, and on-chip temperature-compensation circuitry is embedded with the sustaining circuitry to electronically temperature-compensate the oscillator. Finally, detailed study of the phase-noise in micromechanical oscillators is performed and analytical phase-noise models are derived.

The objective of this research is to develop and design front-end analog circuits for Capacitive Micromachined Ultrasound Transducers (CMUTs) and optical grating MEMS microphone. This work is motivated by the fact that with micro-scaling, MEMS sense capacitance gets smaller in a CMUT array element for intravascular ultrasound imaging, which has dimensions of 70um x 70um and sub pico-farad capacitance. Smaller sensors lead to a lower active-to-parasitic ratio and thus, degrads sensitivity. Area and power requirements are also very stringent, such as the case of intravascular catheter implementations with CMOS-First CMUT fabrication approach. In this implementation, capacitive feedback charge amplifier is an alternative approach to resistive feedback amplifiers. Capacitive feedback charge amplifier provides high sensitivity, small area, low distortion and saving power. This approach of charge amplifiers is also suitable in capacitive microphones where it provides low power and high sensitivity. Another approach to overcome capacitive detection challenges is to implement optical detection. In the case of biomimetic microphone structure, optical detection overcomes capacitive detection's thermal noise issues. Also with micro-scaling, optical detection overcomes the increased parasitics without any sensitivity degradation, unlike capacitive detection. For hearing aids, along with sensitivity, battery life is another challenge. We propose the use of 1-bit front-end sigma-delta ADC for overall improved hearing aid power efficiency. Front-end interface based on envelope detection and synchronous detection schemes have also been designed. These interface circuits consume currents in microampere range from a 1.5V battery. Circuit techniques are used for maximizing linear range and signal handling with low supplies. The entire front end signal processing with Vertical Cavity Surface Emitting Laser (VCSEL) drivers, photodiodes, filters and detectors is implemented on a single chip in 0.35um CMOS process.

This thesis presents the development of a fault detection and diagnosis (FDD) procedure capable of capturing, isolating and identifying multiple abrupt parametric faults. The proposed method relies on parameter estimation deployed in a set membership framework. This approach presupposes the utilization of a linearly parametrizable model and the a priori knowledge of bounded noise errors and parameter perturbations. Under these assumptions, a data-hyperspace is generated at every time instant. The goal of set membership identification (SMI) is the determination of the parametric set, formed as an orthotope or ellipsoid, within which the nominal parameter vector resides and intersects with the data-hyperspace. The fault detection mechanism is activated when the normal operation of the SMI procedure is interrupted due to an empty intersection of the data-hyperspace and the estimated parametric set. At the detection instant, a resetting procedure is performed in order to compute the parameter set and the data-hyperspace that contain the varied nominal parameter vector, allowing the SMI algorithm to continue its operation. During the fault isolation, consistency tests are executed, relying on the projections of the worst case parametric sets and the ones arisen from the normal operation of SMI. A faulty component is indicated when these projections do not intersect, while the distance of their centers is used for fault identification. In case of the ellipsoidal SMI-based FDD and under the assumption of a time invariant parameter vector, a new fault detection criterion is defined based on the intersection of support orthotopes of ellipsoids. A more accurate estimation of the time instant of fault occurrence is proposed based on the application of a backward-in-time procedure starting from the fault detection instant, while the conditions under which a fault will never be detected by the orthotopic and ellipsoidal SMI based FDD are provided. This dissertation explores the efficiency of the proposed FDD methodology for capturing failure modes of two microelectromechanical systems; an electrostatic parallel-plate microactuator and a torsionally resonant atomic force microscope. From an engineering point of view, failure modes appeared in the microcomponents of the microactuator and the TR-AFM are encountered as parameter variations and are captured, isolated and identified by the proposed FDD methodology. / Σε αυτή την διατριβή, παρουσιάζεται η ανάπτυξη μιας διαδικασίας Ανίχνευσης και Διάγνωσης Σφαλμάτων, η οποία είναι ικανή να εντοπίζει, απομονώνει και αναγνωρίζει πολλαπλά, απότομα παραμετρικά σφάλματα. H προτεινόμενη μέθοδος βασίζεται στην αναγνώριση του συνόλου συμμετοχής των παραμέτρων. Ο στόχος της Αναγνώρισης Συνόλου Συμμετοχής είναι ο καθορισμός του παραμετρικού συνόλου εντός του οποίου κείται το ονομαστικό διάνυσμα παραμέτρων, δεδομένου ότι το ονομαστικό διάνυσμα παραμέτρων ανήκει επίσης σε έναν υπερχώρο δεδομένων. Το παραμετρικό σύνολο απεικονίζεται ως ένα ορθότοπο ή ένα ελλειψοειδές, λόγω της εύκολης μαθηματικής τους περιγραφής. Έτσι, η διαδικασία Αναγνώρισης Συνόλου Συμμετοχής αντιστοιχεί σε ένα πρόβλημα βελτιστοποίησης, το οποίο αποσκοπεί στον υπολογισμό του ορθοτόπου ή ελλειψοειδούς το οποίο περιέχει το ονομαστικό διάνυσμα παραμέτρων και τέμνεται με τον υπερχώρο δεδομένων. Ο μηχανισμός Ανίχνευσης Σφαλμάτων ενεργοποιείται όταν διακόπτεται η φυσιολογική λειτουργία της Αναγνώρισης Συνόλου Συμμετοχής, λόγω της κενής τομής μεταξύ των εκτιμώμενου παραμετρικού συνόλου και του υπερχώρου δεδομένων. Τη χρονική στιγμή ανίχνευσης ενός σφάλματος, εφαρμόζεται μια διαδικασία επαναρύθμισης που σκοπεύει στον υπολογισμό του νέου παραμετρικού συνόλου, το οποίο περιέχει το μεταβεβλημένο ονομαστικό διάνυσμα παραμέτρων και τέμνεται με το υπερχώρο δεδομένων. Κατά τη διάρκεια της διαδικασίας απομόνωσης του σφάλματος, εκτελούνται τεστ συμβατότητας, τα οποία βασίζονται στις προβολές των νέων παραμετρικών συνόλων και στις προβολές των παραμετρικών συνόλων χείριστης περίπτωσης, ενώ η απόσταση των κέντρων των προβολών χρησιμοποιείται για αναγνώριση σφάλματος. Στην περίπτωση που η Ανίχνευση και Διάγνωση Σφαλμάτων πραγματοποιείται βασιζόμενη στην Αναγνώριση Συνόλου Συμμετοχής με ελλειψοειδή και θεωρώντας το ονομαστικό διάνυσμα παραμέτρων χρονικά αμετάβλητο, ορίζεται ένα νέο κριτήριο ανίχνευσης σφαλμάτων, χρησιμοποιώντας την τομή των περιβαλλόντων ορθοτόπων των ελλειψοειδών. Σε αυτή την περίπτωση, ένα σφάλμα ανιχνεύεται όταν η τομή αυτή είναι κενή. Ακόμη, προτείνεται μια πιο ακριβής εκτίμηση της χρονικής στιγμής εμφάνισης του σφάλματος, ενώ παρατίθενται οι συνθήκες υπό τις οποίες ένα σφάλμα μπορεί να μην ανιχνευθεί ποτέ με την εφαρμογή των προτεινόμενων μεθόδων. Η συγκεκριμένη διατριβή επίσης ερευνά την αποτελεσματικότητα της προτεινόμενης μεθοδολογίας Ανίχνευσης και Διάγνωσης Σφαλμάτων για τον εντοπισμό των τρόπων εκδήλωσης σφαλμάτων σε δύο μικροηλεκτρομηχανικά συστήματα (ΜΗΜΣ), έναν ηλεκτροστατικό μικροεπενεργητή παράλληλων πλακών και ένα ατομικό μικροσκόπιο συντονισμού στρέψης. Από πλευράς μηχανικής, οι τρόποι εκδήλωσης σφαλμάτων στα δομικά στοιχεία του μικροεπενεργητή ή του ατομικού μικροσκοποίου αντιμετωπίζονται ως απότομες παραμετρικές, οι οποίες εντοπίζονται και διαγιγνώσκονται από τις προτεινόμενες μεθόδους.

Ultra low power wireless sensors and sensor systems are of increasing interest in a variety of applications ranging from structural health monitoring to industrial process control. Electrochemical batteries have thus far remained the primary energy sources for such systems despite the finite associated lifetimes imposed due to limitations associated with energy density. However, certain applications (such as implantable biomedical electronic devices and tire pressure sensors) require the operation of sensors and sensor systems over significant periods of time, where battery usage may be impractical and add cost due to the requirement for periodic re-charging and/or replacement. In order to address this challenge and extend the operational lifetime of wireless sensors, there has been an emerging research interest on harvesting ambient vibration energy. Vibration energy harvesting is a technology that generates electrical energy from ambient kinetic energy. Despite numerous research publications in this field over the past decade, low power density and variable ambient conditions remain as the key limitations of vibration energy harvesting. In terms of the piezoelectric transducers, the open-circuit voltage is usually low, which limits its power while extracted by a full-bridge rectifier. In terms of the interface circuits, most reported circuits are limited by the power efficiency, suitability to real-world vibration conditions and system volume due to large off-chip components required. The research reported in this thesis is focused on increasing power output of piezoelectric transducers and power extraction efficiency of interface circuits. There are five main chapters describing two new design topologies of piezoelectric transducers and three novel active interface circuits implemented with CMOS technology. In order to improve the power output of a piezoelectric transducer, a series connection configuration scheme is proposed, which splits the electrode of a harvester into multiple equal regions connected in series to inherently increase the open-circuit voltage generated by the harvester. This topology passively increases the rectified power while using a full-bridge rectifier. While most of piezoelectric transducers are designed with piezoelectric layers fully covered by electrodes, this thesis proposes a new electrode design topology, which maximizes the raw AC output power of a piezoelectric harvester by finding an optimal electrode coverage. In order to extract power from a piezoelectric harvester, three active interface circuits are proposed in this thesis. The first one improves the conventional SSHI (synchronized switch harvesting on inductor) by employing a startup circuitry to enable the system to start operating under much lower vibration excitation levels. The second one dynamically configures the connection of the two regions of a piezoelectric transducer to increase the operational range and output power under a variety of excitation levels. The third one is a novel SSH architecture which employs capacitors instead of inductors to perform synchronous voltage flip. This new architecture is named as SSHC (synchronized switch harvesting on capacitors) to distinguish from SSHI rectifiers and indicate its inductorless architecture.

On-chip impedance tuning is used to overcome IC perturbations caused by packaging stress. Tuning is more important for matching networks of radio frequency (RF) systems. Possible package resonance and fabrication process variations may cause instability, which is a major problem in RF systems. Thus, precautions need to be taken in order to maintain the overall stability of components and the final system itself. Electrically erasable programmable read-only memory switches (EEPROMs) occupy less die area compared to e-fuses and microelectromechanical system (MEMS) switches, thus EEPROMs are proposed to be used as tuning switches in millimetre-wave (mm-wave) applications. It is anticipated that EEPROM switches will also enable multi-time programming because of the smaller area and the fact that more switches can be used for fine-tuning. The problem addressed in this research is how suitable EEPROMs are for switching applications in the mm-wave region. The main focus of this dissertation is to characterise the suitability of EEPROM switches qualitatively for tuning with systems operating in the mm-wave spectrum. 130 nm SiGe BiCMOS IBM 8HP process technology was used for simulation and the fabricated prototypes. The Dickson charge pump (CP), two voltage doubler CPs and four floating gate (FG) devices were investigated. Literature and theoretical verification was done using computer aided design (CAD) Cadence software through circuit analysis and the layouts were also designed for integrated circuit (IC) prototype fabrication. The qualitative evaluation of the hypothesis was based on investigating reliability issues, switching characteristics, CP output drive capability and mm-wave characterisation. The maximum measured drain current for FGs was 1.4 mA, 2.7 mA and 3 mA for devices 2, 3 and 4, respectively. The ratio between ON state switching current (after tunnelling) and OFF state switching current (after injection) was 1.5, 1.35 and 6 for devices 2, 3 and 4, respectively. The ratios correlated with the expected results in terms of FG transistor area: a high area results in a higher ratio. Despite the correlation, devices 2 and 3 may be unsuitable because the ratio is less than 2: a smaller ratio between the ON and OFF states could also result in higher losses. The Dickson CP achieved an output voltage of 2.96 V from an input of 1.2 V compared to 3.08 V as computed from the theoretical analysis and 4.5 V from the simulation results. The prototypes of the voltage doubler CP did not perform as expected: a maximum of 1 V was achieved compared to 4.1 – 5 V as in the simulation results. The suitability of FG devices for switching applications depends on the ratio of the ON and OFF states (associated to insertion and isolation losses): the larger the FG transistor area, the higher the ratio. The reliability issues are dominated by the oxide thickness of the transistor, which contributes to charge leakages and charge trapping: smaller transistor length causes more uncertainties. Charge trapping in the oxide increases the probability of leakages and substrate conduction, thus introduces more losses. Based on the findings of this research work, the FG devices promise to be suitable for mm-wave switching applications and there is a need for further research investigation to characterise the devices in the mm-wave region fully. AFRIKAANS : Impedansie-instelling op skyf word gebruik om steurings in geïntegreerde stroombane wat deur verpakkingstres veroorsaak word, te oorkom. Instelling is meer belangrik om netwerke van radiofrekwensiesisteme te paar. Moontlike verpakkingresonansie en variasies in die vervaardigingsproses kan onstabiliteit veroorsaak, wat ‟n groot probleem is in radiofrekwensiesisteme. Voorsorg moet dus getref word om die oorhoofse stabiliteit van komponente en die finale sisteem self te handhaaf. Elektries uitveebare programmeerbare slegs-lees-geheueskakelaars (EEPROMs) neem minder matrysarea op as e-sekerings en die sekerings van mikro-elektromeganiese sisteme en word dus voorgestel vir gebruik as instellingskakelaars in millimetergolfaanwendings. Daar word verwag dat EEPROM-skakelaars ook multi-tydprogrammering sal moontlik maak as gevolg van die kleiner area en die feit dat meer skakelaars gebruik kan word vir fyn instellings. Die probleem wat in hierdie navorsing aandag geniet, is die geskiktheid van EEPROMS vir skakelaanwendings in die millimetergolfstreek. The hooffokus van die verhandeling is om die geskiktheid van EEPROM-skakelaars kwalitatief te karakteriseer vir instelling met sisteme wat in die millimetergolfspektrum funksioneer. Department of Electrical, Electronic and Computer Engineering v University of Pretoria 130 nm SiGe BiCMOS IBM 8HP-prosestegnologie is gebruik vir simulasie en die vervaardigde prototipes. Die Dickson-laaipomp is gebruik vir simulasie en die vervaardigde prototipes. Die Dickson-laaipomp, twee spanningverdubbelinglaaipompe en vier swewendehektoestelle is ondersoek. Literatuur- en teoretiese verifikasie is gedoen met behulp van rekenaarondersteunde-ontwerp (CAD) Cadence-sagteware deur stroombaananalise en die uitleg is ook ontwerp vir die vervaardiging van geïntegreerdestroombaanprototipes. Die kwalitatiewe evaluasie van die hipotese is gebaseer op die ondersoek van betroubaarheidkwessies, skakelingeienskappe, laaipompuitsetdryfvermoë en millimetergolfkarakterisering. Die maksimum gemete dreineerstroom vir swewende hekke was 1.4 mA, 2.7 mA en 3 mA vir onderskeidelik toestelle 2, 3 en 4. Die verhouding tussen die AAN-toestand van die skakelstroom (na tonnelling) en die AF-toestand van die skakelstroom (na inspuiting) was 1.5, 1.35 en 6 vir toestelle 2, 3 en 4, onderskeidelik. Die verhoudings het ooreengestem met die verwagte resultate rakende die swewendehek-transistorareas: ‟n groot area het ‟n hoër verhouding tot gevolg. Nieteenstaande die ooreenstemming, mag toestelle 2 en 3 moontlik nie geskik wees nie, omdat die verhouding kleiner as 2 is: ‟n kleiner verhouding tussen die AAN- en AF-toestande mag ook hoër verliese tot gevolg hê. Die Dickson-laaipomp het ‟n uitsetspanning van 2.96 V vanaf ‟n inset van 1.2 V vergeleke met 3.08 V soos bereken volgens die teoretiese analise en 4.5 V volgens die simulasieresultate. Die prototipes van die spanningverdubbelinglaaipomp het nie gefunksioneer soos verwag is nie: ‟n maksimum van 1 V is bereik vergeleke met 4.1 – 5 V soos in die simulasieresultate. Die geskiktheid van swewendehektoestelle vir skakelingtoepassings hang af van die verhouding van die AAN- en AF-toestande (wat met invoer-en isolasieverlies geassosieer word): hoe groter die swewendehektransistorarea, hoe hoër die verhouding. Die betroubaarheidkwessies word oorheers deur die oksieddikte van die transistor, wat bydra tot ladinglekkasies en ladingvasvangs: korter transistorlengte veroorsaak meer onsekerheid. Ladingvasvangs in die oksied verhoog die moontlikheid van lekkasies en substraatgeleiding en veroorsaak dus groter verlies. Die bevindings van hierdie navorsing toon dat swewendehektoestelle waarskynlik geskik is vir millimetergolfaanwendings en verdere navorsing is nodig om die toestelle volledig in die millimetergolfstreek te karakteriseer. Copyright / Dissertation (MEng)--University of Pretoria, 2013. / Electrical, Electronic and Computer Engineering / unrestricted

Microelectromechanical systems (MEMS) depend on mechanical deformation to sense their environment, enhance electrical circuitry, or store data. Nonlinear forces arising from multiphysics phenomena at the micro- and nanoscale -- van der Waals forces, electrostatic fields, dielectric charging, capillary forces, surface roughness, asperity interactions -- lead to challenging problems for analysis, simulation, and measurement of the deforming device elements. Herein, a foundation for the study of mechanical deformation is provided through computational and experimental studies of MEMS microcantilever capacitive switches. Numerical techniques are built to capture deformation equilibria expediently. A compact analytical model is developed from principle multiphysics governing operation. Experimental measurements support the phenomena predicted by the analytical model, and finite element method (FEM) simulations confirm device-specific performance. Altogether, the static multistability and quasistatic performance of the electrostatically-actuated switches are confirmed across analysis, simulation, and experimentation. <p><br></p> <p>The nonlinear multiphysics forces present in the devices are critical to the switching behavior exploited for novel applications, but are also a culprit in a common failure mode when the attractive forces overcome the restorative and repulsive forces to result in two elements sticking together. Quasistatic operation is functional for switching between multistable states during normal conditions, but is insufficient under such stiction-failure. Exploration of dynamic methods for stiction release is often the only option for many system configurations. But how and when is release achieved? To investigate the fundamental mechanism of dynamic release, an atomic force microscopy (AFM) system -- a microcantilever with a motion-controlled base and a single-asperity probe tip, measured and actuated via lasers -- is configured to replicate elements of a stiction-failed MEMS device. Through this surrogate, observable dynamic signatures of microcantilever deflection indicate the onset of detachment between the probe and a sample.</p>