O presente trabalho foi realizado com o objetivo de contribuir para o desenvolvimento tecnológico de sensores eletroquímicos utilizados na detecção de íons, especificamente, de íons de hidrogênio (H+). Na primeira parte do trabalho é descrito e discutido o estado da arte de sensores eletroquímicos de H+, principalmente de dispositivos sensíveis a íons do tipo ISFET (Transistor de Efeito de Campo Sensível a Íons). O foco principal do presente trabalho foi na proposta de fabricação e caracterização funcional de um eletrodo modificado com moléculas de azul de metileno baseado na tecnologia de silício poroso. Os resultados obtidos neste trabalho mostraram que filmes de silício macroporoso modificados com azul de metileno atuam como eletrodos de trabalho com elevada taxa de transferência de elétrons, permitindo sua aplicação em dispositivos sensores eletroquímicos associado à técnica de voltametria cíclica. Os resultados observados nos voltamogramas deste eletrodo mostraram elevada sensibilidade a mudanças de pH da solução, parâmetro associado à concentração de íons de H+. A resposta do sensor foi monitorada pela intensidade de corrente de pico e posição do potencial de pico da reação redox das moléculas de azul de metileno do eletrodo macroporoso modificado. Os eletrodos modificados com azul de metileno em filmes de silício microporoso mostraram uma elevada resistência elétrica, impossibilitando sua aplicação como sensores utilizando-se a técnica de voltametria cíclica. No entanto, devido a sua elevada superfície especifica (600 m2/cm3), estes eletrodos foram aplicados na detecção de íons através da técnica de impedância eletroquímica. Os resultados obtidos com os eletrodos de silício poroso modificado com azul de metileno abrem grandes perspectivas de aplicação em biossensores e Chips de DNA. / This work was done focused on contributing to the technologic development of electrochemical sensors employed in ions detection, specifically, hydrogen ions (H+). At the first part of the work, the H+ electrochemical sensors review is showed and discussed; mainly of the ion sensitive devices know as ISFET device (Ion Sensitive Field Effect Transistor). The work was focused in the purpose of fabrication and functional characterization of a modified electrode with methylene blue molecules based on porous silicon technology. The results obtained with this work showed that macroporous silicon films modified with methylene blue act as work electrodes with high electron transference rate, allowing their application in electrochemical sensor devices using cyclic voltammetry technique. The cyclic voltammetry experimental results of this electrode showed high sensibility to pH changes of the solution, parameter related to the H+ ion concentration. The sensor response was monitored by the intensity of peak current and peak potential position of the redox reaction of methylene blue molecules on modified porous silicon electrode. The modified electrodes with methylene blue on microporous silicon films showed a high electric resistance, making impossible their application as sensors employing the cyclic voltammetry technique. However, due to their high specific surface (600 m2/cm3), these electrodes were applied to ion detection through the electrochemical impedance technique. The results achieved with the porous silicon electrodes modified with methylene blue open great perspectives of application in biosensors and DNA Chips.

Microelectronic Measuring Systems (MEMS) are being used to capture kinematic data in real-world environments. The benefits of using MEMS are their small size, relatively low cost (compared to an Optical Motion Capture System) and the ability to capture real-time data in almost any environment. The accuracy and precision of MEMS can be influenced by elements in their surrounding environment such as building materials (i.e., reinforced steel) and structural components (i.e., elevators). Recognizing the influence of the environment on MEMS output is important if the MEMS are to be used in real-world environments where subjects could navigate between various environments. MEMS can also be affected by dynamic motion therefore testing of the MEMS in the same conditions in which they are to be used will help to identify any issues prior to data collection. The overall purpose of this thesis was to determine if the outputs of four Shimmer 2r MEMS were accurate and precise enough in static and dynamic conditions to use in a future study to assess gait activities of daily living in individuals with a unilateral transtibial amputation. In order to understand the effect of the environment on the MEMS, accuracy and precision were assessed in a rural environment (to reduce the effect of building materials and structural components) as well as the clinical environment where they will eventually be used for research. The MEMS were also evaluated in static and dynamic conditions to better understand how motion affected accuracy and precision. The results of this study confirmed that the clinical environment affected the MEMS outputs. During the dynamic condition, the gyroscope output of one MEMS sensor was significantly different than the other devices indicating recalibration or possible exclusion from future studies. Prior to using MEMS in research, it is advisable to investigate the effects of the environment on the sensor outputs as well as assess the performance of the individual sensors. / Thesis / Master of Science Rehabilitation Science (MSc) / The overall objective of this thesis was to determine if four Shimmer 2r Microelectronic Measuring Systems (MEMS) were accurate and precise enough in static and dynamic conditions prior to their use in a future study to assess seven activities of daily living (including level walking, ramp walking and stairs) in individuals with a unilateral transtibial amputation in a clinical environment. To understand the effect the environment has on the MEMS, they were assessed in both a rural environment to reduce the effect of building materials, as well as the clinical environment where they will eventually be used for research. This study confirmed that the clinical environment affected the MEMS outputs, although these effects were deemed to be clinically insignificant for the intended purpose of these MEMS. Calibration as well as accuracy and precision assessment of MEMS should be executed in the conditions and environments in which they are to be utilized.

This work details a computer-based modeling tool for predicting temperatures in three-dimensional multilayer microelectronic packages. It is capable of modeling surface connections (e.g., wire bonds and pins), edge connections (e.g., leads), and thermal vias. A three-dimensional control-volume finite difference method is used, permitting transient as well as steady solutions. Numerical behavior is examined with respect to the device geometry and external environment. The features of this tool are demonstrated on a sample multilayer package. The effects of the modeling scheme are discussed. An alternate version of the program removes a layer from the numerical model to simplify the solution of the problem. To compensate for the removal of the layer a contact resistance is added. This replaces the thermal resistance the removed layer provided in the z-direction. The x-y conductivity of the adjacent layers are modified based on the removed layer thickness and conductivity. This measure imitates the spreading resistance or conductance that the removed layer provided. The effect of removing a layer in the model is studied, documenting the relationship between layer thickness and conductivity and the error introduced by removing the layer. A simple relationship is sought which can indicate the instances in which the computer model can be simplified. The results are applicable to any method including finite element and series-analytical methods. / Master of Science

No description available.

This thesis is devoted to the research and development of low processing temperature lead-free interconnect materials for microelectronic packaging applications with an emphasis on fundamental studies of nanoparticles synthesis, dispersion and oxidation prevention, and nanocomposites fabrication. Oxide-free tin (Sn), tin/silver (96.5Sn3.5Ag) and tin/silver/copper (96.5Sn3.0Ag0.5Cu) alloy nanoparticles with different sizes were synthesized by a low temperature chemical reduction method. Both size dependent melting point and latent heat of fusion of the synthesized nanoparticles were obtained. The nano lead-free solder pastes/composites created by dispersing the SnAg or SnAgCu alloy nanoparticles into an acidic type flux spread and wet on the cleaned copper surface at 220 to 230 ¡æ. This study demonstrated the feasibility of nano sized SnAg or SnAgCu alloy particle pastes for low processing temperature lead-free interconnect applications in microelectronic packaging. Surface functionalized silver nanoparticles and silver fakes were used as fillers for electrically conductive adhesives (ECAs) applications. During the curing of epoxy resin (150 ¡æ), the surfactants were debonded from the particles and at the same time the oxide layers on the particle surfaces were removed which facilitated the sintering of Ag nanoparticles. The contact interfaces between fillers were significantly reduced and an ultra highly conductive ECA with a resistivity of 5 ¡Á 10-6 ohm.cm was obtained. To enhance the adhesion of carbon nanotube (CNT) films to substrates, an ultra highly conductive ECA were used as a media to transfer the CNT films to copper substrates. The polymer wetted along the CNTs during curing process by the capillary force. An ohmic contact was formed between the copper substrates and the transferred CNTs. This process could overcome the serious obstacles of integration of CNTs into integrated circuits and microelectronic device packages by offering low processing temperatures and improved adhesion of CNTs to substrates. The transferred CNTs can be used to simultaneously form electrical and mechanical connections between chips and substrates.

La récupération d’énergie est un thème de recherche prometteur qui explore un large éventail de sources. Parmi ces sources, on trouve l’énergie mécanique, thermique, électromagnétique, etc. Cette thèse se propose d’explorer des solutions techniques de récupération de l’énergie électromagnétique ambiante. Ce type d’énergie offre une belle opportunité pour participer à l’alimentation, partielle ou complète, d’un système de communication sans fil à basse consommation. Beaucoup d’applications intéressantes telles que les réseaux de capteurs sans fil (WSN), assurant ainsi l’IoT (internet of things), dans le domaine médical et dans la sécurité, sont dotés d’une antenne. Or cette antenne qui est un composant passif volumineux n’est utilisée qu’une faible fraction du temps pour les seules communications. Dans le cadre de la récupération d’énergie RF, l’idée est de mettre à profit ce composant pour glaner l’énergie électromagnétique ambiante, malgré la faible puissance récupérée. Associée à l’antenne, la récupération d’énergie RF est basée sur la mise en œuvre de diodes en redresseurs. Dans ce manuscrit, des diodes intégrées issues d’une technologie moderne : FDSOI 28 nm sont utilisées.A l’issue de ces travaux, trois « runs » dont deux en technologie FDSOI ont pu être réalisés. Des convertisseurs d’énergie RF, du type Dickson, d’un et deux étages, ont été conçus et réalisés à l’aide de cette technologie, mesurés et même comparés à des convertisseurs RF-DC réalisés avec une autre technologie BiCMOS 55 nm. Les convertisseurs réalisés sont à l’état de l’art au niveau du rendement de conversion énergétique pour une puissance donnée de l’ordre de -20 dBm. La technologie FD-SOI offre un nouveau degré de liberté à l’aide de la polarisation de la grille arrière (BG : Back Gate). Cette polarisation du BG permet de modifier les paramètres de l’élément non-linéaire à la base de la conversion. Par ailleurs, une étude sur la réalisation d’une diode Schottky intégrée dans le processus de la FDSOI 28 nm a même été envisagée. A l’issue de ces premières expériences, une méthode d’optimisation de la conception de ces convertisseurs Dickson à partir d’un cahier des charges simplifiée, a été proposée. / Energy harvesting is a promising research theme which analyzes a wide range of sources for the application. These sources can be mechanical, thermal or electromagnetic, etc. Hereby, the work presented explores technical solutions for ambient electromagnetic energy harvesting. Electromagnetic energy is capable of partly or completely supplying energy to low-power wireless communication systems. Many interesting applications are feasible, such as, wireless sensor networks (WSN) ensuring IoT (Internet-of-Things), in the medical field, security, by using equipments containing an antenna. However, the antenna is a voluminous passive component which is utilized merely for a fraction of the time, i.e., just for communications. The underlying idea of RF energy harvesting is to use the antenna to harvest the ambient electromagnetic energy, despite the low power recovered. Associated with the antenna, the RF energy harvesting is based on implementing diodes in rectifiers. In this manuscript, integrated diodes from modern technology: FD-SOI 28 nm are studied.In this work, three run for RF energy harvesting are designed. Two of them are realized in FD-SOI technology. One and two stage Dickson rectifiers for RF energy harvesting using FD-SOI are designed, characterized, measured and compared to RF-DC converters made with 55nm BiCMOS technology. These rectifiers are state-of-the-art in terms of the power conversion efficiency for a given power of the order of -20 dBm. Furthermore, FD-SOI technology offers a new degree of freedom with the back gate polarization (BG). This polarization of the BG makes it viable to change the parameters of the non-linear elements at the base of the conversion. Moreover, an investigation of integrated Schottky diodes using FDSOI 28 nm is presented. At the end of these experiments, a method of optimizing of the design of these Dickson converters based on simplified specifications is proposed.

Les progrès récents concernant la fabrication des substrats de Ge mono- et poly-cristallins, ainsi que des substrats « Ge-sur-isolant », combinés au transfert des technologies des isolants « high-k » et des contacts ohmiques de la technologie Si vers la technologie Ge permettent d’envisager le développement d’une microélectronique à haute performance basée sur une technologie utilisant le Ge en remplacement du Si. Toutefois, afin de respecter les restrictions liées à la fabrication de la prochaine génération de dispositifs microélectroniques miniaturisés (MOSFETs à canal court), il est nécessaire d'améliorer nos connaissances sur le dopage et sur la formation des contacts ohmiques sur Ge, en particulier pour le Ge de type n. Le principal objectif de cette thèse était d'étudier la redistribution atomique ayant lieu pendant certains procédés impliqués dans la fabrication de la structure [métal premier niveau / contact ohmique / Ge-dopé] localisée sur chacune des zones actives (grille, source et drain) des transistors. Notre travail s’est concentré sur le sélénium et le tellure en tant que dopant de type n, ainsi que sur le gallium et l'aluminium comme dopants de type p. Le Palladium a été choisi pour la fabrication des contacts ohmiques. Notre travail comprend l’étude des interactions entre dopants et défauts étendus, de la formation de précipités, et de la diffusion des dopants dans le Ge(001) pendant un recuit post-implantation. La formation et la stabilité des films minces de germaniure de Pd sont également étudiées dans le but d’évaluer et d’optimiser l’utilisation du composé PdGe comme contact ohmique sur Ge. / The recent progress concerning the fabrication of large Ge mono- and poly-crystalline substrates, as well as the fabrication of Ge-On-Insulator (GOI) substrates, combined with the successful transfer from the Si technology to the Ge technology of the high-k dielectric and of the ohmic contact fabrication technologies support the development of a future high-performance Ge-based microelectronic technology. However, in order to meet the restrictions for the fabrication of the next generation of miniaturized microelectronic devices (short-channel MOSFETs), it is necessary to improve our knowledge concerning Ge doping and contact fabrication, in particular for n-type Ge. The main goal of this PhD was to investigate the atomic redistribution occurring during some of the fabrication processes involved in the fabrication of the structure [first-level metal / ohmic contact / doped-Ge] found on each active zone (gate, source, and drain) of transistors. Our work focused on selenium and tellurium for n-type doping, as well as on gallium and aluminum for p-type doping. Palladium was the metal chosen for the fabrication of ohmic contacts.This work includes the study of extended defect interactions with dopants, dopant clustering, and dopant diffusion in Ge(001) during post-implantation annealing. The formation and stability of Pd germanide thin films are also investigated, in order to evaluate and optimize the use of the PdGe compound as ohmic contact on Ge. Finally, dopant redistribution in PdGe thin films and in the Ge substrate during ohmic contact fabrication is also investigated.

O objetivo do presente trabalho é o desenvolvimento de nanocompósitos de silício poroso/azul de metileno (PS/MB) utilizando-se substratos de silício macroporoso e mesoporoso para sua aplicação no monitoramento de gases orgânicos. Foram estudados processos de formação de PS/MB usando PS macroporoso e controlando o pH da solução. Os resultados obtidos indicam que a acidez da solução compromete a adsorção eficiente das moléculas de MB, sendo necessário a utilização de uma solução tampão para elevar o nível do pH. A necessidade de controlar o nível de pH da solução deve-se principalmente à característica ácida da superfície de PS recém formada, já que a superfície está constituída principalmente de ligações do tipo Si-Hx que são altamente hidrofóbicas. Os resultados da emissão fotoluminescente (PL) das estruturas de PS/MB em substrato de PS oxidado mostraram que a intensidade de emissão PL das moléculas de MB é mais intensa se comparada com a emissão das moléculas de MB em solução aquosa de baixa concentração. Esse resultado evidencia que a interação entre os elétrons p e a superfície do filme de PS otimiza a recombinação radiativa, minimizando possíveis caminhos não radiativos do estado excitado da molécula de MB. Adicionalmente, o resultado mostrou que as moléculas de MB adsorvidas sobre substratos de PS oxidados preservam suas características moleculares, atuando em forma monomérica. No caso de moléculas MB adsorvidas em substratos de PS não oxidados, os espectros de emissão PL mostraram que as moléculas de MB perderam sua identidade molecular formando, possivelmente, complexos na superfície do PS. Os resultados dos ensaios de adsorção das moléculas de MB em substratos de silício mesoporoso demonstraram ser mais eficientes quando o solvente utilizado foi o etanol, em condição de pH neutro. A monitoração de ambientes de vapores orgânicos foi efetuada através da resposta PL de uma estrutura de silício mesoporoso oxidado com moléculas de MB adsorvidas (Ox- PS/MB). Os resultados da emissão PL da estrutura Ox-PS/MB para os diferentes ambientes orgânicos apresentaram sinais de PL característicos para cada tipo de gás. Esses resultados mostraram o grande potencial de aplicação da estrutura Ox- PS/MB em um sistema de nariz óptico. / The objective of the present work is the porous silicon/methylene-blue (PS/MB) nanocomposite fabrication by using the macro-porous and mesoporous silicon substrate in order to be applied for organic solvent detection. The PS/MB formation process was studied PS/MB by using the macroporous silicon substrate by the pH value controlling of the solution moieties. The results showed that the acid condition of the solution compromises the efficiency of the MB adsorption wherever it was necessary to use the buffer in order to control the pH level of the solution. This additional process was a necessary condition because the fresh PS surface had had acid feature because the surface moieties at fresh PS are formed for the highly hydrophobic Si-Hx bonds. The PL spectra results from the PS/MB formed at oxidized PS substrate showed that the PL emission from the adsorbed MB molecules is more intense than the emission from the MB molecules in low concentrated solution. These results suggest that the PS surface and electrons p (in the MB) interaction minimizes the non-radioactive path for the excited state recombination of the MB molecules. Additionally this result showed that the adsorbed MB molecules preserved their molecular identity aging as a monomer moiety. In the case of the MB adsorbed at non-oxidized PS substrate, the PL spectra showed that the MB molecules lost their identity forming possible complex moieties at PS surface. The experimental results of the MB adsorption at the mesoporous silicon surface showed to be more efficient when the solution was ethanol at neutral pH value. The organic vapor ambient monitoring was made throughout the PL emission response of the Ox-PS/MB structure. These results showed that the PL emission had had the characteristic feature for each type of gas used in the experiment. These results showed the high potential application of the Ox-PS/MB structure in the optical nose system.

Neste trabalho foi analisado o comportamento de um transistor UTBOX FD SOI MOSFET (Ultra-Thin-Buried-Oxide Fully-Depleted Silicon-on-Insulator Metal- Oxide-Semiconductor Field-Effect-Transistor) planar do tipo N, em sua aplicação como uma célula de memória 1T-DRAM, dando ênfase no estudo das polarizações e propostas de melhorias de desempenho para viabilizar sua aplicação como uma célula de memória. Dessa forma, foram analisados os efeitos das diferentes polarizações (de porta, de dreno e de substrato), bem como a influência da concentração de uma região de extensão de fonte e dreno menos dopada (LDD Lightly Doped Drain), nos principais parâmetros da referida memória. Assim, foram analisados alguns parâmetros da memória tais como tensão de disparo no dreno, margem de sensibilidade, janela de leitura e tempo de retenção, além dos mecanismos atuantes em cada estado da memória (escrita, leitura e repouso). Por fim, foram propostas algumas melhorias de desempenho para o tempo de retenção. Foi observado que o aumento da temperatura facilita a escrita na memória diminuindo a mínima tensão no dreno (até 72% para temperatura de 25 a 300°C, ficando limitada a 0,8V) e o tempo necessários para a escrita (até 95%), porém reduz a margem de sensibilidade (até 90%) e o tempo de retenção (até 2 ordens de grandeza). Verificou-se também que, apesar da menor espessura do filme de silício e do óxido enterrado aumentar a tensão no dreno necessária para ativar o efeito BJT (efeito bipolar parasitário), um potencial positivo no substrato pode reduzir este requisito (61% para tensão de substrato variando de 0 V até 1,5 V). Além disso, foi visto que pode haver uma geração ou uma recombinação de portadores, dependendo da tensão na porta durante o repouso, degradando o bit \'0\' ou \'1\'. Já a otimização da polarização de substrato demonstrou ser limitada pelo compromisso de ser alta o suficiente para ativar o efeito de corpo flutuante durante a escrita, sem prejudicar a leitura do \'0\'. Os resultados também demonstraram que a margem de sensibilidade é menos dependente da tensão do substrato que o tempo de retenção, levando a este último parâmetro ser considerado mais crítico. Com relação à leitura, maiores tensões no dreno resultaram na presença do efeito BJT também neste estado, aumentando a margem de sensibilidade (60%) e diminuindo o tempo de retenção (66%) e o número de leituras possíveis sem atualização do dado (de mais de 30 para 22 leituras). No tópico da concentração das extensões de fonte e dreno, os dispositivos sem extensão de fonte e dreno apresentaram uma taxa de geração de lacunas menor (aproximadamente 12 ordens de grandeza), levando a um tempo de retenção muito maior (aproximadamente 3 ordens de grandeza) quando comparado ao dispositivo referência. Em seu estudo no escalamento, verificou-se uma diminuição no tempo de retenção para canais mais curtos (quase 2 ordens de grandeza), demonstrando ser um fator limitante para as futuras gerações das memórias 1T-DRAM. Apesar disso, quando comparados com os dispositivos convencionais com extensão de fonte e dreno (com extensão), seu tempo de retenção aumentou (quase 1 ordem de grandeza), permitindo a utilização de menores comprimentos de canal (30nm contra 50nm do dispositivo com extensão) e polarizações de substrato menores. Outra proposta de melhoria no tempo de retenção apresentada foi a utilização da polarização de substrato pulsada apenas durante a escrita do nível \'1\', o que resultou no aumento do tempo de retenção em 17%. Finalmente, estudou-se também a variação da banda proibida motivado pela utilização de novos materiais para o filme semicondutor. Observou-se que o aumento da banda proibida aumentou o tempo de retenção em até 5 ordens de grandeza, possibilitando retenções mais próximas das DRAMs convencionais atuais. / In this work, it was analyzed the behavior of a planar UTBOX FD SOI NMOSFET (Ultra-Thin-Buried-Oxide Fully-Depleted Silicon-on-Insulator Metal- Oxide-Semiconductor Field-Effect-Transistor), as a 1T-DRAM (Single Transistor Dynamic Random Access Memory) cell, focusing on the best biases and other proposals for enabling the 1T-DRAM applications. Therefore, it was analyzed the effects of different biases (gate, drain and substrate), as well as the influence of the concentration of a less doped source/drain extension region on the main parameters of this kind of memory. Thus, it was analyzed some of the main memory parameters such as the trigger drain voltage, the sense margin, the read window and the retention time, as well as the mechanisms operating in each state of the memory (writing, reading and holding). Finally, it were proposed some performance enhancements for the retention time of this kind of memory. It was observed that the increase in temperature facilitates the memory write decreasing the minimum drain bias and time required for writing, but reduces the sense margin. It was also verified that, despite the thinner silicon film and buried oxide increase the drain voltage required to activate the BJT effect (parasitic bipolar effect), a positive potential on the substrate may reduce this requirement (61% for back gate bias varying from 0 to 1,5V), being an alternative for solving the problem and allowing the use of smaller devices as a memory cell. Furthermore, it was seen that there can be a carriers generation or recombination, depending on the gate voltage during the holding state, degrading the bit \'0\' or \'1\'. Moreover, the optimization of substrate bias proved to be limited by enabling the writing state, without degrading the reading of \'0\'. The results also demonstrated the sense margin is less dependent on the substrate voltage than the retention time, therefore, the retention time was considered as a more critical parameter. With respect to the reading state, there was the presence of BJT effect also in this state, increasing the margin of sensitivity (60%) and reducing the retention time (66%) and the number of possible readings without updating the data (over 30 for 22 readings) in cases of higher drain bias. On the topic of the concentration of the source and drain extensions, the devices with source and drain extensions presented a generation rate lower (about 12 orders of magnitude), resulting in a retention time far longer than the reference one (about 3 orders of magnitude). About its downscaling, the retention time decreased for shorter channel lengths (almost 2 orders of magnitude), which is a limiting factor for 1T-DRAM future generations. Nevertheless, when it was compared to the conventional devices with source and drain extensions, theirs retention time increased (almost 1 order of magnitude), allowing the use of shorter channel lengths (30nm against 50nm of reference device) and lower back gate biases. Another proposal presented to improve the retention time was the pulsed back gate only during the writing \'1\' state, which resulted in an increase on the retention time by 17%. Finally, we also studied the band gap influence motivated by the use of new materials for the semiconductor film. It was observed that higher band gaps increase the retention time by up to 5 orders of magnitude, allowing a retention time closer to the current conventional DRAMs.

Neste trabalho foi analisado o comportamento de um transistor UTBOX (Ultra Thin Buried Oxide) FD SOI MOSFET (Fully Depleted Silicon-on-Insulator Metal- Oxide-Semiconductor Field-Effect-Transistor) planar do tipo n, operando como uma célula de memória 1T-FBRAM (single transistor floating body random access memory). A memória em questão trata-se de uma evolução das memórias 1T1C-DRAM convencionais formada, porém, de apenas um transistor, sendo o próprio transistor o responsável pelo armazenamento da informação por meio do efeito de corpo flutuante. Assim, foram realizadas simulações numéricas bidimensionais, obtendo-se curvas dinâmicas e, a partir destas, foi possível extrair e analisar alguns dos principais parâmetros da memória tais como tensão de disparo no dreno, margem de sensibilidade, janela de leitura e tempo de retenção, além dos mecanismos atuantes em cada estado da memória (escrita, leitura e repouso). Foram estudadas as polarizações da célula de memória. Dentre as possíveis maneiras de programação do dado 1 desta tecnologia foram abordadas neste trabalho a programação pelos métodos GIDL (Gate Induced Drain Leakage) e BJT (Bipolar Junction Transistor). Pelo método de escrita por GIDL foi possível operar a célula de memória em alta velocidade sem dissipar potência expressiva. Mostrou-se que esse método é bastante promissor para a tecnologia low-power high-speed. E ainda, obteve-se maior estabilidade na operação de leitura quando esta é polarizada no ponto ZTC (Zero Temperature-Coefficient) devido ao nível de corrente do dado 0 ficar estável mesmo com a variação da temperatura. Pelo método de escrita por BJT, estudou-se a influência das espessuras do filme de silício e também do óxido enterrado, notou-se uma forte dependência da tensão mínima de dreno para a programação do dado 1 em função destas espessuras e também em função da temperatura. Conforme a espessura do filme de silício torna-se mais fina, a tensão de disparo aplicada ao dreno aumenta devido ao maior acoplamento. Porém, observou-se que o nível da tensão de disparo do dreno pode ser modulada através da tensão aplicada ao substrato, tornando possível operar a célula em uma tensão de disparo menor aumentando a vida útil do dispositivo. Quanto à temperatura, com o seu aumento observou-se que a tensão mínima de dreno necessária para disparar a escrita do dado 1 diminuiu favorecendo a programação da célula. Porém o tempo de retenção é prejudicado (torna-se menor) por causa do aumento da corrente de fuga na junção PN. Na análise sobre o impacto que a primeira e a segunda porta causam na margem de sensibilidade de corrente e no tempo de retenção, verificou-se que dependendo da tensão aplicada à porta durante a condição de armazenamento do dado, o tempo de retenção pode ser limitado ou pela geração ou pela recombinação dos portadores (lacunas). Notou-se que há um compromisso entre a obtenção da melhor margem de sensibilidade de corrente e o melhor tempo de retenção. Como o tempo retenção é um parâmetro mais crítico, mais atenção foi dada para a otimização deste. Concluiu-se nesta análise que a melhor polarização para reter o dado por mais tempo é a primeira interface estar em modo acumulação e a segunda em modo depleção. No estudo da polarização de dreno durante a operação de leitura, observou-se que quando aplicado alta tensão de dreno é obtido alta margem de sensibilidade, porém ao mesmo tempo esta polarização prejudica o dado 0 devido ao alto nível de geração de lacunas induzidas pela ionização por impacto, o qual diminui o tempo de retenção e destrói o dado 0 quando operações de múltiplas leituras são realizadas. Já para baixo nível de tensão de dreno durante a leitura notou-se que é possível realizar múltiplas operações de leitura sem perder o dado armazenado e também maior tempo de retenção foi obtido. / In this study was analyzed the behavior of one transistor called UTBOX (Ultra Thin Buried Oxide) FD SOI MOSFET (Fully Depleted Silicon-on-Insulator Metal- Oxide-Semiconductor Field-Effect-Transistor) working as a 1T-FBRAM (Single Transistor Floating Body Random Access Memory). This memory device is an evolution from conventional memories 1T1C-DRAM, however formed by only one transistor, the device itself is responsible for the storage of the information through the floating body effect. Thus two dimensional simulations were performed, where were obtained dynamic curves, and from these curves it was possible to extract and analyze some of the main parameters, such as, trigger drain voltage, sense margin current, read window, and the retention time, beyond the mechanisms in each state of memory (write, read and hold). Among the possible ways to program the data 1 in this technology were used the methods GIDL (Gate Induced Drain Leakage) and BJT (Bipolar Junction Transistor). By the GIDL method it was possible to operate the memory cell at high speed without spending significant power, showing that this method is very promising for low-power high-speed. Furthermore, greater stability was obtained in read operation when it is biased at point ZTC (zero-Temperature Coefficient) due to the current level of datum \'0\' remain stable even with temperature variation. By the BJT method, it was studied the influence of the silicon film thickness and the buried oxide thickness, and it was noted a strong dependence on minimum drain voltage for programming the data \'1\' as a function of both thicknesses. As the thickness of the silicon film becomes thinner, the trigger drain voltage increases due to stronger coupling. However, it was observed that the level of the trigger drain voltage can be modulated by the substrate bias in this way it is possible to operate the cell with lower voltage avoiding the damage and increasing the lifetime of the device. About the temperature, with its increase it was observed that the minimum drain voltage required to trigger the writing datum \'1\' decreased favoring the programming the cell. However the retention time is harmed (becomes smaller) due to the increment of leakage current in the PN junction. Analyzing the impact of the first and second gate on sense margin current and retention time, it was verified that depending on the voltage applied to the gate during the hold condition, the retention time may be limited by the generation or recombination of the carriers (holes). It was noted that there is a compromise between obtaining the best sense margin current and the best retention time. Since the retention is the most critical parameter, more attention should be given in order to obtain the optimization of this latter. It is concluded in this analysis that the best bias to retain the datum for longer time is the first interface being in accumulation mode and the second in depletion mode. In the study of biasing the drain during the read operation, it has been observed that the use of high drain voltage provides high sense margin, but at the same time, this polarization affect the data \'0\' due to high level of holes generation induced by impact ionization, which shortens the retention time and destroys the data \'0\' in multiple read operations. However, for low drain voltage during read operations it was possible to perform multiple read operations without losing the stored data and also higher retention time was obtained.