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Showing 101 to 108 of 108 (0.043 seconds)| 101 |
Elektrostatička svojstva atoma sumpora u derivatima tiosemikarbazida / Electrostatic properties of the sulfur atom in the thiosemicarbazide derivativesFrancuski Bojana 10 December 2015 (has links)
<p>U ovoj doktorskoj disertaciji izloženi su rezultati analize eksperimentalno i teorijski dobijene raspodele gustine naelektrisanja dva derivata tiosemikarbazida, 4-metil-3-tiosemikarbazida (MeTSC) i 4-metil-3-tiosemikarbazon 2-piridinformamida (TSC4). Analiza eksperimentalno dobijene gustine naelektrisanja je zasnovana na preciznim podacima dobijenim difrakcijom rendgenskog zračenja visoke rezolucije. Teorijska istraživanja bazirana su na teorijskim strukturnim faktorima dobijenim primenom programa CRYSAL09 polazeći od geometrije molekula određene nakon multipol utačnjavanja eksperimentalno dobijene gustine naelektrisanja. Za opisivanje eksperimentalne i teorijske ukupne elektronske gustine korišćen je Hansen-Coppens-ov multipol-model. Takođe je urađena i topološka analizahemijskih veza i interakcija i ispitivana su elektrostatička svojstva atoma sumpora.</p><p>Analizom eksperimentalne gustine naelektrisanja kristalnih struktura MeTSC i TSC4 uočeno je da deformaciona gustina slobodnih elektronskih parova S atoma ima oblik torusa, da je unutar njega raspodela elektronske gustine nehomogena i da položaj samog torusa može biti ortogonalan (SalTSC) ili pod uglom (MeTSC, <br />TSC4). Na osnovu raspodele deformacione gustine i elektrostatičkog potencijala, kao i na osnovu topološke analize ukupne eksperimentalne gustine naelektrisanja ρ<sub>ktv</sub> i njenog Laplasijana ∇<sup>2</sup>ρ<sub>ktv</sub> zaključeno je da atom sumpora ima izrazitu fleksibilnost i sposobnost da prilagodi svoju elektronsku gustinu slobodnih elektronskih parova prostornom rasporedu donornih grupa koje učestvuju u interakcijama sa S akceptorom. U kristalnim strukturama MeTSC i TSC4 utvrđeno je da S atom istovremeno gradi četiri, odnosno prosečno šest međumolekulskih interakcija.</p><p>U cilju upotpunjavanja eksperimentalnih rezultata analizirana je teorijski dobijena gustina naelektrisanja oba molekula, a zatim su ispitivane karakteristike sumpora kao akceptora i to u sistemima različite složensti polazeći od izolovanih monomera, preko izdvojenih dimer do kristalnogokruženja. Ovom analizom je utvrđeno da se simultanim angažovanjem S atoma u više interakcija ne umanjuje njegova akceptorska sposobnost.</p><p>Vodonične vezekoje uključuju S akceptor su ispitivane sa aspekta energijskih svojstava dimera koji suprisutni u MeTSCi TSC4, kaoi u dodatno konstruisanim sistemima MeTSC/MeOH i aceton/MeOH. Energijske karakteristike su proučavane u pogledu elektrostatičke energije interakcije (E<sub>es</sub>) i kohezione energije(E<sub>coh</sub>). Za <br />dva odabrana MeTSC/MeOH i aceton/MeOH sistema je primenjena metoda kuplovanih klastera kaošto je <em> ab initio</em> CCSD(T) metod. Za MeTSC/MeOH sistem je urađena potpuna optimizacija i za tako dobijenu ravnotežnu geometriju je izračunata energija sistema ∆E<sub>CCSD(T),CBS</sub>.</p> / <p>In this dissertation the analysis of the experimental and theoretically obtained electron density of two derivatives of thiosemicarbasides, 4-methyl-3-thiosemicarbaside (MeTSC) and 4-methyl-3-thiosemikabazone 2-piridinformamide (TSC4) are presented. The analysis of experimentally obtained electron density is based on accurate X-ray diffraction data of high resolution. Theoretically calculated electron densities are obtained from periodic quantum mechanical calculation using CRYSTAL09 and the accurate structural parameters from high resolution X-ray experiment. For the description of the theoretical and experimental electron density the Hansen-Coppens multipol model was used. Further topological analysis of chemical bonds and interactions was performed in order to explain the electrostatic properties of sulfur.</p><p>In this work it has been observed that in the experimentally obtained electron density of the MeTSC and TSC4 crystal structures, the deformational electron density of sulfur free electron pairs forms a toroidal shape. Further, this torus is not homogeneously filled but shows pronounced local accumulations and its position can be either orthogonal (like in SalTSC) or tilted (MeTSC, TSC4). Based on the distribution of the deformational electron density and electrostatic potential, as well as the topological analysis of the total electron density ρ<sub>ktv</sub> and its Laplasian ∇<sup>2</sup>ρ<sub>ktv </sub>it can be concluded that the S atom has a remarkable flexibility and ability to adapt his deformation electron density of free electron pairs into toruses corresponding to the position of donor groups surrounding him. In the crystal structures of MeTSC and TSC4 it was determined that the S atom participates in four and six interactions, respectively.</p><p>In order to supplement the experimentally obtained results a theoretically calculated electron density of both molecules (MeTSC and TSC4) was performed and the properties of the S atom as a hydrogen acceptor have been studied. The analysis was performed on systems of various complexity, starting with isolated monomers, then on dimers and up to the whole crystal packing. From this work it has been concluded that the acceptor capabilities of the S atom are not diminished with the increasing number of interactions. </p><p>The hydrogen bonding involving thioureido S acceptor is also investigated in terms of the energetic properties of the MeTSC and TSC4 dimers existing in the crystal structure, and additional MeTSC/MeOH and acetone/MeOH systems. Energetic features were thoroughly studied through electrostatic interactions energies (E<sub>es</sub>) and cohesive energies (E<sub>coh</sub>). For two selected MeTSC/MeOH and acetone/MeOH systems an ab initio approach employing the coupled-cluster singles and doubles augmented by a perturbational correction for connected triple excitations (CCSD(T)) method were applied. Finaly, for MeTSC/MeOH system full geometry optimization was performed and for resulting equilibrium geometry the energy of the system (∆E<sub>CCSD(T),CBS</sub>) was calculated.</p>
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Untersuchung der elektronischen Struktur quasi-zweidimensionaler EinlagerungsverbindungenDanzenbächer, Steffen 13 November 2001 (has links) (PDF)
Thema der vorliegenden Arbeit ist die Untersuchung ausgewählter niederdimensionaler Schichtgittersysteme, wobei das Hauptinteresse in der Erforschung der elektronischen Struktur im Zusammenhang mit Interkalationsexperimenten liegt. Einkristalline Graphit-, TiSe2- und TaSe2-Proben wurden vor und nach der Interkalation mit winkelaufgelöster Photoemission, Fermi- und Isoenergieflächenmessungen und Elektronenbeugung (LEED) analysiert. Als Interkalationsmaterialien wurden U, Eu, Gd und Cs verwendet. Die experimentellen Daten wurden mit Ergebnissen von LDA-LCAO-Bandstrukturrechnungen und Simulationen im Rahmen eines Single-Impurity-Anderson-Modells verglichen. Neben dem Einfluß unterschiedlicher Valenzelektronen der interkalierten Atome auf den Einlagerungsprozeß werden Fragen zum Lokalisierungsverhalten von 4f- und 5f-Zuständen und zu den Veränderungen in der Dimensionalität der Verbindungen durch die Einlagerung diskutiert. Ein weiterer Schwerpunkt dieser Arbeit befaßt sich mit Untersuchungen zur temperaturabhängigen Ausbildung von Ladungsdichtewellen in 1T-TaSe2. / Subject of the present thesis are investigations of selected low-dimensional layered lattice systems, with the principal goal to study the electronic structure in relation to intercalation experiments. Single-crystalline graphite-, TiSe2 - and TaSe2- samples were analyzed by angle-resolved photoemission, Fermi- and isoenergy-surface measurements, and low energy electron diffraction experiments before and after intercalation. U, Eu, Gd, and Cs were used as materials for the intercalation process. The experimental results were compared with theoretical LDA-LCAO band-structure calculations and with simulations in the framework of a single-impurity Anderson model. In addition to the influence of different numbers of valence electrons from intercalated atoms, questions concerning the localization of 4f and 5f states and changes in the dimensionality of the compounds due to the intercalation process are discussed. Investigations of the temperature dependent formation of charge density waves in 1T-TaSe2 complete this work.
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Studium interakcí organické hmoty a jejích složek pomocí molekulární dynamiky / Study of interactions of organic matter and its components via molecular dynamicsBARVÍKOVÁ, Hana January 2014 (has links)
Humic acids and humates are principal components of humic substances major organic constituents of soil, peat, coal and water around the world. I was involved in research into molecular dynamics simulations of interactions of quartz surfaces with aqueous solutions of ions and small organic molecules representing basic building blocks of larger biomolecules and functional groups of organic matter. We studied interactions of molecules with surfaces for a set of surface charge densities corresponding to the experimentally or environmentally relevant ranges of pH values employing molecular mechanics, molecular dynamics and ab initio techniques. Simulated quartz surfaces covered the range of surface charge densities 0.00, -0.03, -0.06 and -0.12 C-m-2, approximately corresponding to pH values 4.5, 7.5, 9.5 and 11. As model molecules, benzoic acid, phenol, o-salicylic acid and their conjugated bases were chosen. My task was to prepare topologies and parametric models of selected organic matter basic building blocks organic molecules. I focused on studying interactions of these molecules in an aqueous environment with mineral surface quartz. The aim was to process simulation results and analyse conformations of the adsorption complexes and their thermodynamic properties such as interaction energies, free energies and adsorption geometries.
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Phase Behaviour in Crystalline Solids : Exploring the Structure Guiding Factors Via Polymorphism, Phase Transitions and Charge Density StudiesThomas, Sajesh P January 2013 (has links) (PDF)
The thesis entitled "Phase Behaviour in Crystalline Solids: Exploring the Structure Guiding Factors via Polymorphism, Phase Transitions and Charge Density Studies"
consists of five chapters divided into two parts. A basic introductory section describes the topics relevant to the work and the methods and techniques utilized. Part A contains two chapters that discuss the structural aspects related to polymorphism, solvatomorphism, conformational preferences and phase transitions exhibited by active pharmaceutical ingredients (APIs). It also discusses the structure-property correlations in API crystal forms and the possible utility of second harmonic generation (SHG) for their bulk characterization. Part B has three chapters that discuss experimental and theoretical charge density analyses of intra-and intermolecular interactions that play structure guiding roles in some of the APIs discussed in Part A. The main focus of the present work is to characterize the interaction patterns devoid of strong classical hydrogen bonds. The case studies include multifurcated C - H …O hydrogen bonds, the “carbon bonding” and chalcogen interactions involving Se and S atoms. In addition to charge density studies, in situcryocrystallography and molecular complexation experiments have been employed to examine structural consequences of chalcogen bonding. Further, Appendices 1 and 2 describe phase transition studies on the inorganic mineral kröhnkite and its high temperature phase transitions leading to novel inorganic structural types.
Part A: Polymorphism and phase behaviour in Active Pharmaceutical Ingredients (APIs)
Chapter 1 discusses case studies of polymorphism, supramolecular preference sand phase transitions exhibited by active pharmaceutical ingredients (APIs). Section 1.1 deals with the polymorphism of an anti-oxidant drug candidate ebselen and its hydroxyl derivative. The potential of organoselenium compounds to form a Se…O chalcogen bonded supramolecular recognition unit (synthon) has been established in these polymorphs and its generality is substantiated with the help of a Cambridge Structural Database (CSD) analysis. Section 1.2 demonstrates the utility of the ‘chalcogen bonded supramolecularsynthon’ in generating molecular complexes of APIs. A series of salts and co-crystals of the amyotrophic lateral sclerosis drug Riluzole have been synthesized in order to evaluate the structure directing role of S…O chalcogen bonded synthon in their crystal structures. Section 1.3adescribes the generation of polymorphs and solvatomorphs of the antidepressant drug candidate fenobamand associated phase transitions. The tautomeric preference in this molecule has been rationalized from the crystal structure analysis and abinitioenergy calculations. Further, section 1.3b utilizes chemical derivatization as a means to experimentally simulate thetautomeric preference and molecular conformations in several derivatives of fenobam and thiofenobam. Section 1.4 describes the issue of solvatomorphism and the generation of the fifth solvatomorph of gallic acid, its structural complexity and temperature induced phase transitions. The ability of solvent water molecules to drive structural diversity, by forming ‘hydration synthons’,is demonstrated in this case. Chapter 2 presents a novel methodology for the detection of polymorphic impurities in APIs based on second harmonic generation (SHG).The SHG based method has been employed to polymorphic mixtures of fenobam, hydrochlorothiazide, pyrazinamide, tolbutamide, curcumin, febuxostat and nimesulide.The conventional methods such as powder X-ray diffraction (profile fitting analysis), FT-IR, Raman spectroscopy and thermal analysesto detect the presence of polymorphic impuritiesin bulk API samples are employed on the mixtures of these API samples and the impurity detection limits are compared with the proposed SHG methodology. The APIs used in these case studies were screened for their SHG efficiency using quantum chemical calculations of hyperpolarizability and HOMO-LUMO charge redistribution behaviour. Further, a correlation with the crystal symmetry, relative packing arrangement of molecules and the observed SHG efficiency have been discussed in of some of these cases.
Part B: Exploring the nature and structural consequences of nonbonding interactions in molecular crystals
Chapter 3 discusses the electron density features of quasi-trifurcated CH…Cl/CH…O interaction motifs leading to ‘carbon bonding’ and a trifurcated CH…O hydrogen bond motif. Section 3.1 describes the experimental and theoretical charge density analyses of quasi-trifurcated CH…Cl and CH…O motifsand investigates the existence of “carbon bonding” in solid state. The experimental charge density evidence for “carbon bonding” have been analyzed in cases of fenobam and dimethylamine: 4-hydroxybenzoic acid complex. The existence of this unconventional interaction, which roughly mimics the transition state geometry of SN2 (bimolecular nucleophilic substitution) reaction, is further established by a CSD analysis. Section 3.2 describes the experimental and theoretical charge density analyses of ferulic acid and compares the topological features associated with a trifurcated CH…O hydrogen bond motif, with corresponding strong classical OH…O hydrogen bonds. The study demonstrates the “Gulliver effect” of weak interactions in charge density terms. Charge density based interaction energy calculations via EPMM and EML methods have been utilized in this context to evaluate the relative strength of such interactions. Chapter 4 discusses the charge density features of intermolecular chalcogen bonding interactions involving selenium and sulphur atoms.Section 4.1 describes the experimental and theoretical charge density analyses of ebselen and its hydroxyl derivative. The charge density characterization of the conserved chalcogen bond synthon (discussed in chapter 1, section 1.1) has been carried out and electronic nature and geometric dependence of Se…O interactions have been explored. The mechanism of drug action of ebselen has been correlated with the experimentally observed charge density distribution around the intramolecular SeC and SeN bonds. Section 4.2 explores the homochalcogen interactions such as S…SandSe…Se in phenol analogues. In situ cryocrystallographic studies on thiophenol, selenophenol and their solid solutions are described. Veggard’s law-like behaviour observed in these solid solutions have been rationalized and the S…S and Se…Sehomochalcogen interactions have been evaluated in these liquid systems which are devoid of any other packing forces such as strong hydrogen bonds. Chapter 5 discusses the conformation locking potential of intramolecular S…O chalcogen bonding in sulfadrugs. Section 5.1 discusses conformation locking in the antibioticdrugsulfamethizole. A two pronged approach has been adopted in the study; a) generation of cocrystals and salts of sulfamethizole for the ‘experimental simulation’ of the molecular conformation, b) evaluation of charge density distribution around the intramolecular S…O interaction region in sulfamethizole. Section 5.2 describes the effect of ‘simple hybridized orbital geometry’ in the formation of intramolecular S…O chalcogen bonding. The experimental charge density analysis of the carbonic anhydrase inhibitor drug acetazolamide has been carried out and the two different intramolecular S…O geometries have been compared in terms of the charge density topology. The analysis highlights the advantage of “orbital geometry” consideration over the conventional distance-angle criteria in assessing nonbonded interactions.
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Untersuchung der elektronischen Struktur quasi-zweidimensionaler EinlagerungsverbindungenDanzenbächer, Steffen 29 November 2001 (has links)
Thema der vorliegenden Arbeit ist die Untersuchung ausgewählter niederdimensionaler Schichtgittersysteme, wobei das Hauptinteresse in der Erforschung der elektronischen Struktur im Zusammenhang mit Interkalationsexperimenten liegt. Einkristalline Graphit-, TiSe2- und TaSe2-Proben wurden vor und nach der Interkalation mit winkelaufgelöster Photoemission, Fermi- und Isoenergieflächenmessungen und Elektronenbeugung (LEED) analysiert. Als Interkalationsmaterialien wurden U, Eu, Gd und Cs verwendet. Die experimentellen Daten wurden mit Ergebnissen von LDA-LCAO-Bandstrukturrechnungen und Simulationen im Rahmen eines Single-Impurity-Anderson-Modells verglichen. Neben dem Einfluß unterschiedlicher Valenzelektronen der interkalierten Atome auf den Einlagerungsprozeß werden Fragen zum Lokalisierungsverhalten von 4f- und 5f-Zuständen und zu den Veränderungen in der Dimensionalität der Verbindungen durch die Einlagerung diskutiert. Ein weiterer Schwerpunkt dieser Arbeit befaßt sich mit Untersuchungen zur temperaturabhängigen Ausbildung von Ladungsdichtewellen in 1T-TaSe2. / Subject of the present thesis are investigations of selected low-dimensional layered lattice systems, with the principal goal to study the electronic structure in relation to intercalation experiments. Single-crystalline graphite-, TiSe2 - and TaSe2- samples were analyzed by angle-resolved photoemission, Fermi- and isoenergy-surface measurements, and low energy electron diffraction experiments before and after intercalation. U, Eu, Gd, and Cs were used as materials for the intercalation process. The experimental results were compared with theoretical LDA-LCAO band-structure calculations and with simulations in the framework of a single-impurity Anderson model. In addition to the influence of different numbers of valence electrons from intercalated atoms, questions concerning the localization of 4f and 5f states and changes in the dimensionality of the compounds due to the intercalation process are discussed. Investigations of the temperature dependent formation of charge density waves in 1T-TaSe2 complete this work.
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Syntheses and Electron Density Determination of Novel Polyimido Sulfur Ylides / Synthesen und Elektronendichtebestimmung an neuen Polyimido-SchwefelylidenDeuerlein, Stephan 31 October 2007 (has links)
No description available.
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Charge transport and energy levels in organic semiconductors / Ladungstransport und Energieniveaus in organischen HalbleiternWidmer, Johannes 25 November 2014 (has links) (PDF)
Organic semiconductors are a new key technology for large-area and flexible thin-film electronics. They are deposited as thin films (sub-nanometer to micrometer) on large-area substrates. The technologically most advanced applications are organic light emitting diodes (OLEDs) and organic photovoltaics (OPV). For the improvement of performance and efficiency, correct modeling of the electronic processes in the devices is essential. Reliable characterization and validation of the electronic properties of the materials is simultaneously required for the successful optimization of devices. Furthermore, understanding the relations between material structures and their key characteristics opens the path for innovative material and device design.
In this thesis, two material characterization methods are developed, respectively refined and applied: a novel technique for measuring the charge carrier mobility μ and a way to determine the ionization energy IE or the electron affinity EA of an organic semiconductor.
For the mobility measurements, a new evaluation approach for space-charge limited current (SCLC) measurements in single carrier devices is developed. It is based on a layer thickness variation of the material under investigation. In the \"potential mapping\" (POEM) approach, the voltage as a function of the device thickness V(d) at a given current density is shown to coincide with the spatial distribution of the electric potential V(x) in the thickest device. On this basis, the mobility is directly obtained as function of the electric field F and the charge carrier density n. The evaluation is model-free, i.e. a model for μ(F, n) to fit the measurement data is not required, and the measurement is independent of a possible injection barrier or potential drop at non-optimal contacts. The obtained μ(F, n) function describes the effective average mobility of free and trapped charge carriers. This approach realistically describes charge transport in energetically disordered materials, where a clear differentiation between trapped and free charges is impossible or arbitrary.
The measurement of IE and EA is performed by characterizing solar cells at varying temperature T. In suitably designed devices based on a bulk heterojunction (BHJ), the open-circuit voltage Voc is a linear function of T with negative slope in the whole measured range down to 180K. The extrapolation to temperature zero V0 = Voc(T → 0K) is confirmed to equal the effective gap Egeff, i.e. the difference between the EA of the acceptor and the IE of the donor. The successive variation of different components of the devices and testing their influence on V0 verifies the relation V0 = Egeff. On this basis, the IE or EA of a material can be determined in a BHJ with a material where the complementary value is known. The measurement is applied to a number of material combinations, confirming, refining, and complementing previously reported values from ultraviolet photo electron spectroscopy (UPS) and inverse photo electron spectroscopy (IPES).
These measurements are applied to small molecule organic semiconductors, including mixed layers. In blends of zinc-phthalocyanine (ZnPc) and C60, the hole mobility is found to be thermally and field activated, as well as increasing with charge density. Varying the mixing ratio, the hole mobility is found to increase with increasing ZnPc content, while the effective gap stays unchanged. A number of further materials and material blends are characterized with respect to hole and electron mobility and the effective gap, including highly diluted donor blends, which have been little investigated before. In all materials, a pronounced field activation of the mobility is observed. The results enable an improved detailed description of the working principle of organic solar cells and support the future design of highly efficient and optimized devices. / Organische Halbleiter sind eine neue Schlüsseltechnologie für großflächige und flexible Dünnschichtelektronik. Sie werden als dünne Materialschichten (Sub-Nanometer bis Mikrometer) auf großflächige Substrate aufgebracht. Die technologisch am weitesten fortgeschrittenen Anwendungen sind organische Leuchtdioden (OLEDs) und organische Photovoltaik (OPV). Zur weiteren Steigerung von Leistungsfähigkeit und Effizienz ist die genaue Modellierung elektronischer Prozesse in den Bauteilen von grundlegender Bedeutung. Für die erfolgreiche Optimierung von Bauteilen ist eine zuverlässige Charakterisierung und Validierung der elektronischen Materialeigenschaften gleichermaßen erforderlich. Außerdem eröffnet das Verständnis der Zusammenhänge zwischen Materialstruktur und -eigenschaften einen Weg für innovative Material- und Bauteilentwicklung.
Im Rahmen dieser Dissertation werden zwei Methoden für die Materialcharakterisierung entwickelt, verfeinert und angewandt: eine neuartige Methode zur Messung der Ladungsträgerbeweglichkeit μ und eine Möglichkeit zur Bestimmung der Ionisierungsenergie IE oder der Elektronenaffinität EA eines organischen Halbleiters.
Für die Beweglichkeitsmessungen wird eine neue Auswertungsmethode für raumladungsbegrenzte Ströme (SCLC) in unipolaren Bauteilen entwickelt. Sie basiert auf einer Schichtdickenvariation des zu charakterisierenden Materials. In einem Ansatz zur räumlichen Abbildung des elektrischen Potentials (\"potential mapping\", POEM) wird gezeigt, dass das elektrische Potential als Funktion der Schichtdicke V(d) bei einer gegebenen Stromdichte dem räumlichen Verlauf des elektrischen Potentials V(x) im dicksten Bauteil entspricht. Daraus kann die Beweglichkeit als Funktion des elektrischen Felds F und der Ladungsträgerdichte n berechnet werden. Die Auswertung ist modellfrei, d.h. ein Modell zum Angleichen der Messdaten ist für die Berechnung von μ(F, n) nicht erforderlich. Die Messung ist außerdem unabhängig von einer möglichen Injektionsbarriere oder einer Potentialstufe an nicht-idealen Kontakten. Die gemessene Funktion μ(F, n) beschreibt die effektive durchschnittliche Beweglichkeit aller freien und in Fallenzuständen gefangenen Ladungsträger. Dieser Zugang beschreibt den Ladungstransport in energetisch ungeordneten Materialien realistisch, wo eine klare Unterscheidung zwischen freien und Fallenzuständen nicht möglich oder willkürlich ist.
Die Messung von IE und EA wird mithilfe temperaturabhängiger Messungen an Solarzellen durchgeführt. In geeigneten Bauteilen mit einem Mischschicht-Heteroübergang (\"bulk heterojunction\" BHJ) ist die Leerlaufspannung Voc im gesamten Messbereich oberhalb 180K eine linear fallende Funktion der Temperatur T. Es kann bestätigt werden, dass die Extrapolation zum Temperaturnullpunkt V0 = Voc(T → 0K) mit der effektiven Energielücke Egeff , d.h. der Differenz zwischen EA des Akzeptor-Materials und IE des Donator-Materials, übereinstimmt. Die systematische schrittweise Variation einzelner Bestandteile der Solarzellen und die Überprüfung des Einflusses auf V0 bestätigen die Beziehung V0 = Egeff. Damit kann die IE oder EA eines Materials bestimmt werden, indem man es in einem BHJ mit einem Material kombiniert, dessen komplementärer Wert bekannt ist. Messungen per Ultraviolett-Photoelektronenspektroskopie (UPS) und inverser Photoelektronenspektroskopie (IPES) werden damit bestätigt, präzisiert und ergänzt.
Die beiden entwickelten Messmethoden werden auf organische Halbleiter aus kleinen Molekülen einschließlich Mischschichten angewandt. In Mischschichten aus Zink-Phthalocyanin (ZnPc) und C60 wird eine Löcherbeweglichkeit gemessen, die sowohl thermisch als auch feld- und ladungsträgerdichteaktiviert ist. Wenn das Mischverhältnis variiert wird, steigt die Löcherbeweglichkeit mit zunehmendem ZnPc-Anteil, während die effektive Energielücke unverändert bleibt. Verschiedene weitere Materialien und Materialmischungen werden hinsichtlich Löcher- und Elektronenbeweglichkeit sowie ihrer Energielücke charakterisiert, einschließlich bisher wenig untersuchter hochverdünnter Donator-Systeme. In allen Materialien wird eine deutliche Feldaktivierung der Beweglichkeit beobachtet. Die Ergebnisse ermöglichen eine verbesserte Beschreibung der detaillierten Funktionsweise organischer Solarzellen und unterstützen die künftige Entwicklung hocheffizienter und optimierter Bauteile.
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Charge transport and energy levels in organic semiconductorsWidmer, Johannes 02 October 2014 (has links)
Organic semiconductors are a new key technology for large-area and flexible thin-film electronics. They are deposited as thin films (sub-nanometer to micrometer) on large-area substrates. The technologically most advanced applications are organic light emitting diodes (OLEDs) and organic photovoltaics (OPV). For the improvement of performance and efficiency, correct modeling of the electronic processes in the devices is essential. Reliable characterization and validation of the electronic properties of the materials is simultaneously required for the successful optimization of devices. Furthermore, understanding the relations between material structures and their key characteristics opens the path for innovative material and device design.
In this thesis, two material characterization methods are developed, respectively refined and applied: a novel technique for measuring the charge carrier mobility μ and a way to determine the ionization energy IE or the electron affinity EA of an organic semiconductor.
For the mobility measurements, a new evaluation approach for space-charge limited current (SCLC) measurements in single carrier devices is developed. It is based on a layer thickness variation of the material under investigation. In the \"potential mapping\" (POEM) approach, the voltage as a function of the device thickness V(d) at a given current density is shown to coincide with the spatial distribution of the electric potential V(x) in the thickest device. On this basis, the mobility is directly obtained as function of the electric field F and the charge carrier density n. The evaluation is model-free, i.e. a model for μ(F, n) to fit the measurement data is not required, and the measurement is independent of a possible injection barrier or potential drop at non-optimal contacts. The obtained μ(F, n) function describes the effective average mobility of free and trapped charge carriers. This approach realistically describes charge transport in energetically disordered materials, where a clear differentiation between trapped and free charges is impossible or arbitrary.
The measurement of IE and EA is performed by characterizing solar cells at varying temperature T. In suitably designed devices based on a bulk heterojunction (BHJ), the open-circuit voltage Voc is a linear function of T with negative slope in the whole measured range down to 180K. The extrapolation to temperature zero V0 = Voc(T → 0K) is confirmed to equal the effective gap Egeff, i.e. the difference between the EA of the acceptor and the IE of the donor. The successive variation of different components of the devices and testing their influence on V0 verifies the relation V0 = Egeff. On this basis, the IE or EA of a material can be determined in a BHJ with a material where the complementary value is known. The measurement is applied to a number of material combinations, confirming, refining, and complementing previously reported values from ultraviolet photo electron spectroscopy (UPS) and inverse photo electron spectroscopy (IPES).
These measurements are applied to small molecule organic semiconductors, including mixed layers. In blends of zinc-phthalocyanine (ZnPc) and C60, the hole mobility is found to be thermally and field activated, as well as increasing with charge density. Varying the mixing ratio, the hole mobility is found to increase with increasing ZnPc content, while the effective gap stays unchanged. A number of further materials and material blends are characterized with respect to hole and electron mobility and the effective gap, including highly diluted donor blends, which have been little investigated before. In all materials, a pronounced field activation of the mobility is observed. The results enable an improved detailed description of the working principle of organic solar cells and support the future design of highly efficient and optimized devices.:1. Introduction
2. Organic semiconductors and devices
2.1. Organic semiconductors
2.1.1. Conjugated π system
2.1.2. Small molecules and polymers
2.1.3. Disorder in amorphous materials
2.1.4. Polarons
2.1.5. Polaron hopping
2.1.6. Fermi-Dirac distribution and Fermi level
2.1.7. Quasi-Fermi levels
2.1.8. Trap states
2.1.9. Doping
2.1.10. Excitons
2.2. Interfaces and blend layers
2.2.1. Interface dipoles
2.2.2. Energy level bending
2.2.3. Injection from metal into semiconductor, and extraction
2.2.4. Excitons at interfaces
2.3. Charge transport and recombination in organic semiconductors
2.3.1. Drift transport
2.3.2. Charge carrier mobility
2.3.3. Thermally activated transport
2.3.4. Diffusion transport
2.3.5. Drift-diffusion transport
2.3.6. Space-charge limited current
2.3.7. Recombination
2.4. Mobility measurement
2.4.1. SCLC and TCLC
2.4.2. Time of flight
2.4.3. Organic field effect transistors
2.4.4. CELIV
2.5. Organic solar cells
2.5.1. Exciton diffusion towards the interface
2.5.2. Dissociation of CT states
2.5.3. CT recombination
2.5.4. Flat and bulk heterojunction
2.5.5. Transport layers
2.5.6. Thin film optics
2.5.7. Current-voltage characteristics and equivalent circuit
2.5.8. Solar cell efficiency
2.5.9. Limits of efficiency
2.5.10. Correct solar cell characterization
2.5.11. The \"O-Factor\"
3. Materials and experimental methods
3.1. Materials
3.2. Device fabrication and layout
3.2.1. Layer deposition
3.2.2. Encapsulation
3.2.3. Homogeneity of layer thickness on a wafer
3.2.4. Device layout
3.3. Characterization
3.3.1. Electrical characterization
3.3.2. Sample illumination
3.3.3. Temperature dependent characterization
3.3.4. UPS
4. Simulations
5.1. Design of single carrier devices
5.1.1. General design requirements
5.1.2. Single carrier devices for space-charge limited current
5.1.3. Ohmic regime
5.1.4. Design of injection and extraction layers
5.2. Advanced evaluation of SCLC – potential mapping
5.2.1. Potential mapping by thickness variation
5.2.2. Further evaluation of the transport profile
5.2.3. Injection into and extraction from single carrier devices
5.2.4. Majority carrier approximation
5.3. Proof of principle: POEM on simulated data
5.3.1. Constant mobility
5.3.2. Field dependent mobility
5.3.3. Field and charge density activated mobility
5.3.4. Conclusion
5.4. Application: Transport characterization in organic semiconductors
5.4.1. Hole transport in ZnPc:C60
5.4.2. Hole transport in ZnPc:C60 – temperature variation
5.4.3. Hole transport in ZnPc:C60 – blend ratio variation
5.4.4. Hole transport in ZnPc:C70
5.4.5. Hole transport in neat ZnPc
5.4.6. Hole transport in F4-ZnPc:C60
5.4.7. Hole transport in DCV-5T-Me33:C60
5.4.8. Electron transport in ZnPc:C60
5.4.9. Electron transport in neat Bis-HFl-NTCDI
5.5. Summary and discussion of the results
5.5.1. Phthalocyanine:C60 blends
5.5.2. DCV-5T-Me33:C60
5.5.3. Conclusion
6. Organic solar cell characteristics: the influence of temperature
6.1. ZnPc:C60 solar cells
6.1.1. Temperature variation
6.1.2. Illumination intensity variation
6.2. Voc in flat and bulk heterojunction organic solar cells
6.2.1. Qualitative difference in Voc(I, T)
6.2.2. Interpretation of Voc(I, T)
6.3. BHJ stoichiometry variation
6.3.1. Voc upon variation of stoichiometry and contact layer
6.3.2. V0 upon stoichiometry variation
6.3.3. Low donor content stoichiometry
6.3.4. Conclusion from stoichiometry variation
6.4. Transport material variation
6.4.1. HTM variation
6.4.2. ETM variation
6.5. Donor:acceptor material variation
6.5.1. Donor variation
6.5.2. Acceptor variation
6.6. Conclusion
7. Summary and outlook
7.1. Summary
7.2. Outlook
A. Appendix
A.1. Energy pay-back of this thesis
A.2. Tables and registers / Organische Halbleiter sind eine neue Schlüsseltechnologie für großflächige und flexible Dünnschichtelektronik. Sie werden als dünne Materialschichten (Sub-Nanometer bis Mikrometer) auf großflächige Substrate aufgebracht. Die technologisch am weitesten fortgeschrittenen Anwendungen sind organische Leuchtdioden (OLEDs) und organische Photovoltaik (OPV). Zur weiteren Steigerung von Leistungsfähigkeit und Effizienz ist die genaue Modellierung elektronischer Prozesse in den Bauteilen von grundlegender Bedeutung. Für die erfolgreiche Optimierung von Bauteilen ist eine zuverlässige Charakterisierung und Validierung der elektronischen Materialeigenschaften gleichermaßen erforderlich. Außerdem eröffnet das Verständnis der Zusammenhänge zwischen Materialstruktur und -eigenschaften einen Weg für innovative Material- und Bauteilentwicklung.
Im Rahmen dieser Dissertation werden zwei Methoden für die Materialcharakterisierung entwickelt, verfeinert und angewandt: eine neuartige Methode zur Messung der Ladungsträgerbeweglichkeit μ und eine Möglichkeit zur Bestimmung der Ionisierungsenergie IE oder der Elektronenaffinität EA eines organischen Halbleiters.
Für die Beweglichkeitsmessungen wird eine neue Auswertungsmethode für raumladungsbegrenzte Ströme (SCLC) in unipolaren Bauteilen entwickelt. Sie basiert auf einer Schichtdickenvariation des zu charakterisierenden Materials. In einem Ansatz zur räumlichen Abbildung des elektrischen Potentials (\"potential mapping\", POEM) wird gezeigt, dass das elektrische Potential als Funktion der Schichtdicke V(d) bei einer gegebenen Stromdichte dem räumlichen Verlauf des elektrischen Potentials V(x) im dicksten Bauteil entspricht. Daraus kann die Beweglichkeit als Funktion des elektrischen Felds F und der Ladungsträgerdichte n berechnet werden. Die Auswertung ist modellfrei, d.h. ein Modell zum Angleichen der Messdaten ist für die Berechnung von μ(F, n) nicht erforderlich. Die Messung ist außerdem unabhängig von einer möglichen Injektionsbarriere oder einer Potentialstufe an nicht-idealen Kontakten. Die gemessene Funktion μ(F, n) beschreibt die effektive durchschnittliche Beweglichkeit aller freien und in Fallenzuständen gefangenen Ladungsträger. Dieser Zugang beschreibt den Ladungstransport in energetisch ungeordneten Materialien realistisch, wo eine klare Unterscheidung zwischen freien und Fallenzuständen nicht möglich oder willkürlich ist.
Die Messung von IE und EA wird mithilfe temperaturabhängiger Messungen an Solarzellen durchgeführt. In geeigneten Bauteilen mit einem Mischschicht-Heteroübergang (\"bulk heterojunction\" BHJ) ist die Leerlaufspannung Voc im gesamten Messbereich oberhalb 180K eine linear fallende Funktion der Temperatur T. Es kann bestätigt werden, dass die Extrapolation zum Temperaturnullpunkt V0 = Voc(T → 0K) mit der effektiven Energielücke Egeff , d.h. der Differenz zwischen EA des Akzeptor-Materials und IE des Donator-Materials, übereinstimmt. Die systematische schrittweise Variation einzelner Bestandteile der Solarzellen und die Überprüfung des Einflusses auf V0 bestätigen die Beziehung V0 = Egeff. Damit kann die IE oder EA eines Materials bestimmt werden, indem man es in einem BHJ mit einem Material kombiniert, dessen komplementärer Wert bekannt ist. Messungen per Ultraviolett-Photoelektronenspektroskopie (UPS) und inverser Photoelektronenspektroskopie (IPES) werden damit bestätigt, präzisiert und ergänzt.
Die beiden entwickelten Messmethoden werden auf organische Halbleiter aus kleinen Molekülen einschließlich Mischschichten angewandt. In Mischschichten aus Zink-Phthalocyanin (ZnPc) und C60 wird eine Löcherbeweglichkeit gemessen, die sowohl thermisch als auch feld- und ladungsträgerdichteaktiviert ist. Wenn das Mischverhältnis variiert wird, steigt die Löcherbeweglichkeit mit zunehmendem ZnPc-Anteil, während die effektive Energielücke unverändert bleibt. Verschiedene weitere Materialien und Materialmischungen werden hinsichtlich Löcher- und Elektronenbeweglichkeit sowie ihrer Energielücke charakterisiert, einschließlich bisher wenig untersuchter hochverdünnter Donator-Systeme. In allen Materialien wird eine deutliche Feldaktivierung der Beweglichkeit beobachtet. Die Ergebnisse ermöglichen eine verbesserte Beschreibung der detaillierten Funktionsweise organischer Solarzellen und unterstützen die künftige Entwicklung hocheffizienter und optimierter Bauteile.:1. Introduction
2. Organic semiconductors and devices
2.1. Organic semiconductors
2.1.1. Conjugated π system
2.1.2. Small molecules and polymers
2.1.3. Disorder in amorphous materials
2.1.4. Polarons
2.1.5. Polaron hopping
2.1.6. Fermi-Dirac distribution and Fermi level
2.1.7. Quasi-Fermi levels
2.1.8. Trap states
2.1.9. Doping
2.1.10. Excitons
2.2. Interfaces and blend layers
2.2.1. Interface dipoles
2.2.2. Energy level bending
2.2.3. Injection from metal into semiconductor, and extraction
2.2.4. Excitons at interfaces
2.3. Charge transport and recombination in organic semiconductors
2.3.1. Drift transport
2.3.2. Charge carrier mobility
2.3.3. Thermally activated transport
2.3.4. Diffusion transport
2.3.5. Drift-diffusion transport
2.3.6. Space-charge limited current
2.3.7. Recombination
2.4. Mobility measurement
2.4.1. SCLC and TCLC
2.4.2. Time of flight
2.4.3. Organic field effect transistors
2.4.4. CELIV
2.5. Organic solar cells
2.5.1. Exciton diffusion towards the interface
2.5.2. Dissociation of CT states
2.5.3. CT recombination
2.5.4. Flat and bulk heterojunction
2.5.5. Transport layers
2.5.6. Thin film optics
2.5.7. Current-voltage characteristics and equivalent circuit
2.5.8. Solar cell efficiency
2.5.9. Limits of efficiency
2.5.10. Correct solar cell characterization
2.5.11. The \"O-Factor\"
3. Materials and experimental methods
3.1. Materials
3.2. Device fabrication and layout
3.2.1. Layer deposition
3.2.2. Encapsulation
3.2.3. Homogeneity of layer thickness on a wafer
3.2.4. Device layout
3.3. Characterization
3.3.1. Electrical characterization
3.3.2. Sample illumination
3.3.3. Temperature dependent characterization
3.3.4. UPS
4. Simulations
5.1. Design of single carrier devices
5.1.1. General design requirements
5.1.2. Single carrier devices for space-charge limited current
5.1.3. Ohmic regime
5.1.4. Design of injection and extraction layers
5.2. Advanced evaluation of SCLC – potential mapping
5.2.1. Potential mapping by thickness variation
5.2.2. Further evaluation of the transport profile
5.2.3. Injection into and extraction from single carrier devices
5.2.4. Majority carrier approximation
5.3. Proof of principle: POEM on simulated data
5.3.1. Constant mobility
5.3.2. Field dependent mobility
5.3.3. Field and charge density activated mobility
5.3.4. Conclusion
5.4. Application: Transport characterization in organic semiconductors
5.4.1. Hole transport in ZnPc:C60
5.4.2. Hole transport in ZnPc:C60 – temperature variation
5.4.3. Hole transport in ZnPc:C60 – blend ratio variation
5.4.4. Hole transport in ZnPc:C70
5.4.5. Hole transport in neat ZnPc
5.4.6. Hole transport in F4-ZnPc:C60
5.4.7. Hole transport in DCV-5T-Me33:C60
5.4.8. Electron transport in ZnPc:C60
5.4.9. Electron transport in neat Bis-HFl-NTCDI
5.5. Summary and discussion of the results
5.5.1. Phthalocyanine:C60 blends
5.5.2. DCV-5T-Me33:C60
5.5.3. Conclusion
6. Organic solar cell characteristics: the influence of temperature
6.1. ZnPc:C60 solar cells
6.1.1. Temperature variation
6.1.2. Illumination intensity variation
6.2. Voc in flat and bulk heterojunction organic solar cells
6.2.1. Qualitative difference in Voc(I, T)
6.2.2. Interpretation of Voc(I, T)
6.3. BHJ stoichiometry variation
6.3.1. Voc upon variation of stoichiometry and contact layer
6.3.2. V0 upon stoichiometry variation
6.3.3. Low donor content stoichiometry
6.3.4. Conclusion from stoichiometry variation
6.4. Transport material variation
6.4.1. HTM variation
6.4.2. ETM variation
6.5. Donor:acceptor material variation
6.5.1. Donor variation
6.5.2. Acceptor variation
6.6. Conclusion
7. Summary and outlook
7.1. Summary
7.2. Outlook
A. Appendix
A.1. Energy pay-back of this thesis
A.2. Tables and registers
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