No description available.

Many video games have elaborate plots and storylines with intricate world-building and lore for the players to explore. However, some games are about doing real-life activities in a virtual world. These type of games belong to the Social and Life Simulation  genre of games. Often, games within this genre are considered to be plotless, with the presumption that they are lore-less as well. Even though these games do not have a specific plotline to follow there may still be evidence of lore and stories in these games. A case study is conducted, examinimg community-created content for the Social and Life- simulation games Animal Crossing and The Simms that highlight lore and stories in the games. The result shows that the games contain lore wich can be used as a starting point for players to create theories and stories of their own during game play.

No description available.

No description available.

Neste trabalho, estudamos e aplicamos técnicas analíticas com feixes iônicos para a identificação e quantificação do elemento químico Boro em amostras de Boro depositado sobre Níquel 11B/Ni, sobre Silício B/Si e em amostras de Silício Grau Metalúrgico - SiGM. Estas últimas foram fornecidas pelo grupo de metalurgia do Instituto de Pesquisas Tecnológicas (IPT). Especificamente, as seguintes técnicas analíticas foram utilizadas: Nuclear Reaction Analysis - NRA, Elastic Recoil Detection Analysis - ERDA e Secondary Ion Mass Spectrometry - SIMS. Nas amostras de B/Ni e B/Si, as concentrações foram obtidas com medidas de NRA, ERDA e SIMS. Também foi abordado quais dentre essas três técnicas apresentam menor limite de deteção e menor incerteza para a quantificação de Boro. Usando a reação nuclear 11B(p,a0)8Be, foi possível calcular a sua seção de choque diferencial para ângulo de espalhamento theta=170, cujo resultado, para este ângulo específico, é inédito na literatura. As amostras de SiGM foram analisadas com a técnica SIMS e comparadas com medidas de Inductively Coupled Plasma - ICP realizadas pelo grupo do IPT. Uma vez que técnicas nucleares podem ser consideradas absolutas, concluímos que as medidas de ICP apresentaram dados compatíveis com as medidas SIMS, e que o grupo de metalurgia do IPT está medindo as concentrações de Boro em suas amostras de SiGM corretamente por meio de ICP. Uma reta de calibração entre medidas SIMSxICP foi construída, que poderá servir como um guia para futuras quantificações de Boro com ICP feitas pelo grupo de metalurgia do IPT. / In this work we investigated the use of analytical techniques based on ion beams in the quantification of Boron in many kinds of samples. Specifically, we applied techniques such Nuclear Reaction Analysis (NRA), Elastic Recoil Detection Analysis (ERDA) and Secondary Ion Mass Spectrometry (SIMS) to 11B/Ni and B/Si samples to measure the boron concentration. We also discuss and show what technique has a better detection limit and lower uncertainty. For the first time in the literature, we obtained the cross section for the $^{11}B(p,\\alpha_0){^8}Be$ nuclear reaction in the energy range from 1.6 up to 2.0 MeV in theta = 170 scattering angle. The SIMS technique was applied to analise samples of metallurgical grade silicon (SiGM) from Metallurgy Group of Instituto de Pesquisas Tecnologicas (IPT) to check the Inductively Coupled Plasma (ICP) measurements carried out by the IPT. Moreover, it was possible to build a calibration curve between SIMS and ICP measurements, that can be used to help of Metallurgy Group with futures ICP\'s measurements.

Der Cr2O3 ist einer der wichtigsten Katalysatoren im Chlor/Fluor (Cl/F) Austauschreaktionen für die Produktion von chlorofluorocarbon (CFC) Alternativen. Es wird als ein ausgezeichneter heterogener Katalysator für Fluorierung Reaktionen gegründet. Die Dismutierung von CCl2F2 wurde verwendet, um die Wirkung von Halogenierung von Chrom(III) Oxyd auf Cl/F-Austauschreaktionen zu untersuchen und um den Unterschied zwischen den inaktiven und aktiven Katalysatoren herauszufinden. Die heterogenen Reaktionen wurden in einem tubular-flow Ni Reaktor und auch unter simulierten Reaktionsbedingungen in einem Reaktor durchgeführt, wo nach der Reaktion die Photoelektronspektroskopie (XPS) und die Auger-Elektronspektroskopie (XAES) Analysen konnte direkt ohne Luftkontakt, unter so genannt "in - situ" Bedingungen gefolgt werden. Es wurde gezeigt, dass die Probleme der Behandlung von Cr (III) 2p Photoelektronenspektren so gelöst werden können, dass ihnen relevante Daten für die chemische Charakterisierung von Oberflächen entnommen werden können. Hochaufgelöste Photoelektronspektroskopie von Cr2O3 Pulverproben zeigte deutlich die Existenz von spektralen Strukturen, die mit Multiplet-Aufspaltungen im jeweiligen Cr 2p Spektrum verbunden sind. Das Spektrum kann durch eine Peakfit-Analyse vertieft interpretiert werden in dem die Anfangswerte für die Peakparameter der Multiplet-Strukturen den jeweiligen Cr L2,3 XANES Spektren entnommen werden. Vom theoretischen Gesichtspunkt sollte dasselbe Verfahren auch eine Analyse der Cr 2p Photoelektronenspektren von alpha-CrF3, CrCl3 und anderen Chrom (III) Verbindungen ermöglichen. Die Unterschiede, die im Experiment für die Cr2O3, alpha-CrF3 und CrCl Photoelektronenspektren beobachtet werden, deuten auf die Tatsache, dass, obwohl in all diesen Fällen dieselben Multiplet-Aufspaltungen für Cr3+ erwartet werden, individuelle Einflüsse der Symmetrie und Ligandenfelder die Endgestalt des jeweiligen Cr 2p Photoelektronenspektrums definieren. Eine Analyse von Cr 3s Spektren kann zusätzlich wertvolle Finger-print Informationen zu chemischen Zuständen von Chrom in Cr (III) Verbindungen erbringen. Sowohl ex-situ als auch ´´in-situ´´ ESCA zeigen, dass sobald CCl2F2 zu Cr2O3 an 390 °C geführt wird, Fluorierung sowie Chlorierung an der Katalysator-Oberfläche findet statt. Wenn die XPS Oberflächenzusammensetzung etwa 4 Atom - % Fluorierung und 6 Atom - %-Chlorierung erreicht, wird die maximale katalytische Aktivität erhalten. Die längeren Reaktionszeiten ändern bedeutsam die erhaltene Oberflächenzusammensetzung von aktiviertem Chrom(III) Oxyd nicht. Der Fluorierung und Chlorierung von Chrom(III) Oxyd wurden weiter durch verschiedenen HF und HCl Behandlungen ebenso untersucht. Die aktivierten Chrom(III) Oxyd Proben und Referenzproben mit der weithin bekannten chemischen Struktur wurden auch durch Kantennahe Röntegenabsorptionsuntersuchungen (XANES), Flugzeit-statischesekundärionenmassenspektroskopie (TOF-SSIMS), Rasterelektronenmikroskopie (SEM), Fluor-Festkörper-NMR, Pyridin-FTIR, Nasschemie (F und Cl) Analyse, Pulver Röntgensbeugung (XRD) und Oberflächen (BET) Analyse untersucht. Die Ergebnisse der Referenzproben Cr2O3, Cr (OH) 3, CrF2 (OH), CrF3.3H2O, Alpha-CrF3, Beta-CrF3 und CrCl3 und aktivierte Cr2O3 Proben wurden verglichen. Die angewandten Charakterisierungsmethoden schlagen vor, dass die Bildung der Chrom-Oxydchlorid-Fluorid-Arten, bzw. Chrom-Oxyd Halogenide, an der Oberfläche ist genügend die katalytische Aktivität zu versorgen. Die Anwesenheit jedes CrF3 und/oder CrCl3 Phasen auf den aktivierten Chrom(III) Oxyd Proben wurde nicht entdeckt. / The Cr2O3 is one of the most important catalysts in the chlorine/fluorine (Cl/F) exchange reactions for the production of chlorofluorocarbon (CFC) alternatives. It is established as an excellent heterogeneous catalyst for fluorination reactions. The dismutation of CCl2F2 was used to probe the effect of halogenation of chromia on Cl/F exchange reactions in order to find out the difference between the inactive and active catalysts. The heterogeneous reactions were performed in a continuous flow Ni reactor and also under simulated reaction conditions in a reactor where after the reaction the X-ray photoelectron spectroscopy (XPS) and the X-ray excited Auger electron spectroscopy (XAES) analyses could be followed directly without air contact, under so called ´´in-situ´´ conditions. In order to be able to apply the Cr(III) 2p XPS analysis in the proper manner the spectroscopic features of the chromium(III) compounds of O, F and Cl were re-investigated. Latest generation of XPS spectrometers, which are able to analyze non-conductive powders with ultimate energy resolution, were used to reveal multiplet splitting features and satellite emission in the Cr 2p spectra. The energy positions of the multiplets were determined by total electron yield (TEY)- X-ray absorption near edge structure (XANES) spectroscopy. Using both high resolution XPS and XANES spectra a peak-fit analysis, which is also applicable for normally resolved Cr 2p XPS spectrum, was proposed. In order to overcome the known background problem by drawing the background in the broad Cr 2p window including the high binding energy satellite, a modified Shirley background, which is a combination of a linear and Shirley function, was used. Moreover, the spectroscopic features of the Cr(III) 3s XPS spectrum, which is relatively simpler than the Cr 2p one, were also surveyed. An alternative chemical analysis was proposed by using chemical state plots for Cr 3s. Both ex- and in-situ ESCA show that as soon as Cr2O3 is conducted to CCl2F2 at 390 °C fluorination as well as chlorination takes place at the catalyst surface. When the XPS surface composition reaches approximately 4 atom-% fluorination and 6 atom-% chlorination, maximum catalytic activity is obtained. Applying longer reaction times do not change significantly the obtained surface composition of the activated chromia. The fluorination and chlorination of chromia was further investigated by various HF and HCl treatments as well. The activated chromia samples and reference samples with well known chemical structure were also characterized by XANES, time of flight - static secondary ion mass spectroscopy (TOF-SSIMS), scanning electron microscopy (SEM), fluorine solid state NMR, pyridine-FTIR, wet chemical (F and Cl) analysis, X-ray powder diffraction (XRD) and surface area (BET) analysis. The results for the references Cr2O3, Cr(OH)3, CrF2(OH), CrF3.3H2O, alpha-CrF3, beta-CrF3 and CrCl3 and activated Cr2O3 samples were compared. The applied characterization methods suggest that the formation of chromium oxide chloride fluoride species, e.g. chromium oxide halides, at the surface is sufficient to provide catalytic activity. The presence of any CrF3 and/or CrCl3 phases on the activated chromia samples was not detected.

Neste trabalho, estudamos e aplicamos técnicas analíticas com feixes iônicos para a identificação e quantificação do elemento químico Boro em amostras de Boro depositado sobre Níquel 11B/Ni, sobre Silício B/Si e em amostras de Silício Grau Metalúrgico - SiGM. Estas últimas foram fornecidas pelo grupo de metalurgia do Instituto de Pesquisas Tecnológicas (IPT). Especificamente, as seguintes técnicas analíticas foram utilizadas: Nuclear Reaction Analysis - NRA, Elastic Recoil Detection Analysis - ERDA e Secondary Ion Mass Spectrometry - SIMS. Nas amostras de B/Ni e B/Si, as concentrações foram obtidas com medidas de NRA, ERDA e SIMS. Também foi abordado quais dentre essas três técnicas apresentam menor limite de deteção e menor incerteza para a quantificação de Boro. Usando a reação nuclear 11B(p,a0)8Be, foi possível calcular a sua seção de choque diferencial para ângulo de espalhamento theta=170, cujo resultado, para este ângulo específico, é inédito na literatura. As amostras de SiGM foram analisadas com a técnica SIMS e comparadas com medidas de Inductively Coupled Plasma - ICP realizadas pelo grupo do IPT. Uma vez que técnicas nucleares podem ser consideradas absolutas, concluímos que as medidas de ICP apresentaram dados compatíveis com as medidas SIMS, e que o grupo de metalurgia do IPT está medindo as concentrações de Boro em suas amostras de SiGM corretamente por meio de ICP. Uma reta de calibração entre medidas SIMSxICP foi construída, que poderá servir como um guia para futuras quantificações de Boro com ICP feitas pelo grupo de metalurgia do IPT. / In this work we investigated the use of analytical techniques based on ion beams in the quantification of Boron in many kinds of samples. Specifically, we applied techniques such Nuclear Reaction Analysis (NRA), Elastic Recoil Detection Analysis (ERDA) and Secondary Ion Mass Spectrometry (SIMS) to 11B/Ni and B/Si samples to measure the boron concentration. We also discuss and show what technique has a better detection limit and lower uncertainty. For the first time in the literature, we obtained the cross section for the $^{11}B(p,\\alpha_0){^8}Be$ nuclear reaction in the energy range from 1.6 up to 2.0 MeV in theta = 170 scattering angle. The SIMS technique was applied to analise samples of metallurgical grade silicon (SiGM) from Metallurgy Group of Instituto de Pesquisas Tecnologicas (IPT) to check the Inductively Coupled Plasma (ICP) measurements carried out by the IPT. Moreover, it was possible to build a calibration curve between SIMS and ICP measurements, that can be used to help of Metallurgy Group with futures ICP\'s measurements.

Les oxydes La2Mo2-yWyO9 (1,0 ≤y ≤ 2,0) ont été obtenus par voie de synthèse solide-solide et caractérisés par diffraction des rayons X (température ambiante et en température) ainsi que par analyse thermique différentielle. Un diagramme de phase de ce système est proposé. Les phases thermodynamiquement stables à température ambiante sont : pour 1,0≤ y ≤1,2 une solution solide de type β-La2Mo2O9 (cubique); pour 1,3≤ y ≤1,575 un domaine biphasique de phases de type β-La2Mo2O9+ α-La2W2O9 et pour 1,6≤ y ≤2,0 une solution solide de type α-La2W2O9. Dans le domaine biphasique, une distribution inhomogène du tungstène est suspectée. Il est clair que les composés à teneur en tungstène supérieure à y=1,2 ne conviennent pas pour utilisation en piles à combustibles à oxydes solides.Des études de diffusion cationiques par SIMS ont été menées sur des couples La2Mo2O9 (LMO)/La0.8Sr0.2MnO3-δ (LSM) après leurs recuits à haute température. Des cristaux de LaMnO3 en forme de barreau ont été observés sur les pastilles de LMO et la croissance d’une phase de type SrMoO4 a été constatée sur la pastille LSM. Des hypothèses expliquant les mécanismes possibles de diffusion sont présentés. Les coefficients de diffusion en volume du strontium et du manganèse dans LMO et du molybdène dans LSM sont estimés proches respectivement de 1x10-20 cm2.s-1 et 1x10-15 cm2.s-1 à 800°C. Des études similaires de diffusion ont été menées par dépôts de solutions riches en cations manganèse et strontium sur des pastilles de LMO et d’une solution riche en cation molybdène sur une pastille de LSM. Après recuit, la formation de cristaux de LaMnO3 au niveau de la zone de dépôt de la solution de manganèse a été observée. Les coefficients de diffusion du molybdène dans LSM et du strontium dans LMO semblent être beaucoup plus importants -proches de 1-2x10-10cm2.s-1 à 1150°C- que ceux obtenus lors des mesures sur couple LMO/LSM. De par leur réactivité, le couple LMO/LSM ne semble pas adapté pour une application dans le domaine des piles à combustible, sauf si une couche tampon appropriée les sépare.Les stabilités de LMO et de LMO dopé tungstène ont été étudiées sous atmosphères réductrices. Suivant le taux de perte en oxygène, des changements structuraux successifs ont été observés : de phase LMO à La7Mo7O30(7730), phase amorphe réduite La2Mo2O7-δ et décomposition partielle sous forme de molybdène métallique. Le domaine de stabilité de La2Mo2-yWyO9 sous faible pression de O2 ne semble pas dépendant du taux de tungstène alors que la cinétique de réduction, elle, évolue avec y. En revanche, la limite de stabilité de la phase 7730 apparait dépendante du taux de tungstène. La phase réduite amorphe existe sur un large domaine de stoechiométrie en oxygène (7-δ de 6,69 à 6,20), cependant sa stabilité vs. PO2 reste à démontrer. Les mesures de résistivité conduites sur un échantillon amorphe de La2Mo2O7-δ de faible compacité et sans fissure ont montré une augmentation significative de la conductivité (> 1 S.cm-1 à 1000 K) vis-à-vis de La2Mo2O9, avec une pseudo-énergie d’activation de 0.255eV. Il a été supposé qu’une conductivité électronique de type n résulte de la réduction partielle des cations Mo6+ en Mo3+ et Mo4+. / La2Mo2-yWyO9 (y = 1.0 to 2.0) oxides were synthesized by conventional solid state route and studied by XRD, TC-XRD and DTA. A phase diagram of the series was proposed. The thermodynamically stable phases at room temperature are: for 1.0≤ y ≤1.2 a cubic β-La2Mo2O9 type solid solution, for 1.3≤ y ≤1.575 a biphasic mixture of β-La2Mo2O9 type + α-La2W2O9 type phases, and for 1.6≤ y ≤2.0 a triclinic α-La2W2O9 type solid solution. Inhomogeneous distribution of W is suspected in the biphasic samples. It is clear that the compounds above y =1.2 are not suitable for SOFC applications.Cationic diffusion studies were performed using SIMS on La2Mo2O9 (LMO)/La0.8Sr0.2MnO3-δ (LSM) annealed couples. Rod shaped LaMnO3 grains were observed on LMO pellet and SrMoO4 type phases were seen to be growing on LSM pellet. Hypotheses for possible reaction mechanisms are presented. Bulk diffusion coefficients of Sr and Mn in LMO and of Mo in LSM are extrapolated to be around 1x10-20 cm2.s-1 and 1x10-15 cm2.s-1, respectively, at 800oC. Similar diffusion studies were performed by depositing Mn and Sr cation rich solutions on LMO pellets and Mo rich solution on LSM pellet. Mn solution was observed to be forming, upon annealing, LaMnO3 single crystals on the surface of the LMO pellet. Mo in LSM and Sr in LMO diffusion coefficients appear to be much higher than in LMO/LSM couple experiments, namely around 1-2x10-10cm2.s-1 at 1150°C. Because of the reactivity, LMO/LSM couple is not desirable for SOFC applications, unless an appropriate buffer layer separates them.The stability of LMO and W-LMO was studied under reductive atmospheres. Successive structural changes from LMO to La7Mo7O30 (7730), an amorphous reduced phase La2Mo2O7-δ, and partial decomposition to metallic Mo were observed as a function of oxygen loss. The pO2 stability domain of La2Mo2-yWyO9 did not appear to change with W content, but the reduction kinetics varied with y. At reverse, the stability limit of the 7730 phase was found to be dependent on W content. The amorphous reduced phase can accommodate a wide range of oxygen stoichiometry (7-δ from 6.69 to 6.20), but its stability vs. pO2 is questioned. Resistivity measurements performed on a low compacity crack-free amorphous La2Mo2O7-δ sample showed significant increase in the conductivity (> 1 S.cm-1 at 1000 K) relative to La2Mo2O9, with a pseudo activation energy 0.255eV. It is postulated that n-type electronic conductivity arises from partial reduction of hexavalent Mo6+ to a mixture of Mo3+ and Mo4+.

Résumé confidentiel / Résumé confidentiel

Ce travail est consacré à l’étude de l’incorporation volontaire des dopants dans des films de carbure de silicium épitaxiés par la technique de dépôt chimique en phase vapeur. Le rôle des principaux paramètres de croissance (température, flux de dopant, vitesse de dépôt, pression dans le réacteur et le rapport C/Si) sur l’incorporation d’azote et d’aluminium a été étudié en détail. Les travaux menés jusqu’ici ont largement exploré les caractéristiques de l’incorporation de dopants, en particulier l’incorporation d’azote et ont montré des résultats parfois très dépendants de l’équipement de croissance utilisé. Afin d’explorer cette influence, une étude expérimentale exhaustive sur l’incorporation de N et Al a été réalisée sur des couches homoépitaxiées 4H-SiC sur la face carbone et sur la face silicium de substrats 4H-SiC dans nos réacteurs CVD. Cette étude a été complétée par une analyse des propriétés structurales, optiques et électriques de couches 4H-SiC dopé Al. Aussi, la fabrication de diodes pn a été expérimentée sur les couches épitaxiées dans nos réacteurs. Nous avons pu observer différentes tendances expérimentales selon la nature du dopant, l’orientation cristalline du substrat et l’environnement chimique durant la croissance. Nous en déduisons que le mécanisme derrière les tendances observées est largement influencé par des facteurs comme les conditions de croissance (c'est-à-dire la température de croissance et/ou la pression) et la couverture de carbone à la surface de la croissance, surtout sur la face C / This work is dedicated to the investigation of intentional dopant incorporation in silicon carbide epilayers grown by chemical vapor deposition technique. The role of main process conditions (growth temperature, dopant supply, deposition rate, growth pressure and C/Si ratio) on both, Nitrogen and Aluminum incorporation was studied in details. Previous works have widely explored the characteristics of dopant incorporation, especially the nitrogen incorporation addressing a potential influence of growth equipment for the observed incorporation trends. An exhaustive experimental study of N and Al incorporation was performed for homoepitaxial 4H-SiC layers grown on Si- and C-faces of 4H-SiC substrates in our CVD setups to explore such influence. It was completed by the assessment of the structural, optical and electrical properties of the Al doped 4H-SiC films. Furthermore, the fabrication of pn diodes was tested on the grown layers. We have observed different experimental tendencies depending on dopant nature, crystal orientation and chemical environment. We conclude from these observations that the mechanism behind the experimentally obtained tendencies is widely influenced by factors such as process conditions (i.e. growth temperature and/or pressure) and the carbon coverage at the grown surface, especially on C-face