Extreme environments pose major obstacles for electronics in the form of extremely wide temperature ranges and hazardous radiation. The most common mitigation procedures involve extensive shielding and temperature control or complete displacement from the environment with high costs in weight, power, volume, and performance. There has been a shift away from these solutions and towards distributed, in-environment electronic systems. However, for this methodology to be viable, the requirements of heavy radiation shielding and temperature control have to be lessened or eliminated. This work gained new understanding of the best practices in analog circuit design for extreme environments. Major accomplishments included the over-temperature -180 C to +120 C and radiation validation of the SiGe Remote Electronics Unit, a first of its kind, 16 channel, sensor interface for unshielded operation in the Lunar environment, the design of two wide-temperature (-180 C to +120 C), total-ionizing-dose hardened, wireline transceivers for the Lunar environment, the low-frequency-noise characterization of a second-generation BiCMOS process from 300 K down to 90 K, the explanation of the physical mechanisms behind the single-event transient response of cascode structures in a 45 nm, SOI, radio-frequency, CMOS technology, the analysis of the single-event transient response of differential structures in a 32 nm, SOI, RF, CMOS technology, and the prediction of scaling trends of single-event effects in SOI CMOS technologies.

Transition metal oxides (TMO) have proven to exhibit novel properties such as high temperature superconductivity, magnetic ordering, charge and spin density waves, metal to insulator transitions and colossal magnetoresistance. Among these are a spin-orbit coupling (SOC) induced Mott insulator Sr2IrO4. The electric transport properties of this material remain finite even at cryogenic temperatures enabling its complex electronic structure to be investigated by a scanning tunneling microscope. At T = 77 K, we observed two features which represent the Mott gap with a value of 2D ~ 615 meV. Additionally an inelastic loss feature was observed inside this gap due to a single magnon excitation at an energy of ~ 125 meV. These features are consistent with similar measurements with other probes. In addition to these features, at T = 4.2 K lower energy features appear which are believed to be due to additional magnetic ordering. Another material that exhibits a unique physical behavior is the sliding charge density wave (CDW) material TaS3. It is a quasi-one dimensional material that forms long narrow ribbon shaped crystals. It exhibits anomalies including non-ohmic conductivity, a decrease in the Young’s modulus, a decrease in the shear modulus and voltage induced changes in the crystal’s overall length. In addition, we have observed the torsional piezo-like response, voltage induced torsional strain (VITS), in TaS3 which was first discovered by Pokrovskii et. al. in 2007. Our measurements were conducted with a helical resonator. The VITS response has a huge effective piezoelectric coefficient of ~ 104 cm/V. In addition we have concluded that the VITS is a very slow response with time constants of ~ 1 s near the CDW depinning threshold, that these time constants are dependent on the CDW current, and we suggest that the VITS is due to residual twists being initially present in the crystal.

Cette thèse porte sur la conception d’un amplificateur de puissance à haut rendement entrant dans une architecture d’émission pour des terminaux mobiles multi-radio fonctionnant dans la bande de fréquences 800MHz – 6 GHz. Une architecture polaire avec codeur d’enveloppe ΣΔ a été validée, pour un fonctionnement multiradio, avec un signal test respectant la norme actuellement la plus contraignante, WiMAX mobile – IEEE 802.16e. Cette validation montre la pertinence, du fait de la nature invariante en amplitude du signal issu de l’architecture, d’avoir recours à un amplificateur à haut rendement en classe commutée. Une topologie novatrice d’amplificateur de puissance (PA) a été développée pour la conception et la fabrication de ce circuit. Le procédé de réalisation du PA en technologie ST CMOS SOI 130 nm est détaillé et les simulations sont validées par une caractérisation complète du PA à l’aide de mesures fréquentielles et temporelles. Mesuré avec un signal sinusoïdal à la fréquence de 3,3 GHz, le PA permet d’obtenir une puissance de sortie de +23 dBm avec un rendement en puissance ajoutée de 61% et un gain en puissance de 14 dB. Conçu et réalisé en technologie compatible CMOS, ce PA permet d’envisager une solution type SoC pour l’ensemble de l’architecture / Evolution on demand for circuits for mobile radio transceivers pushes semiconductors industry to increasing integration levels. These constraints, added to those generated by the growing number of current and future generation wireless transmission systems that must coexist into a handheld device have turned multi-standard systems solution obsolete ; parallelizing functional blocs is no more an efficient solution. Reconfigurable multi-radio concept is a major evolution of last systems, offering high power consumption and circuit surface efficiency. This manuscript resumes our research work on multi-radio mobile emitter architectures for the frequency band going from 800 to 6000 MHz and the power amplifier associated with it. A polar architecture which includes a ΣΔ envelope modulator had been validated for multiradio design using à test signal synthesized under the most stringent of current wireless standards; IEEE 802.16e – mobile WiMAX. Validation shows pertinence, up to the non variable amplitude nature of the signal issued of the architecture, of employing a non linear and high efficient power amplifier. An innovative power amplifier topology has been adopted for its design and realization. PA design and realization procedure using 130 nm ST CMOS SOI process has been detailed and validated under PLS simulations and a complete characterization of the PA by frequency and temporal measurements. Characterized under à sine continuous waveform of frequency 3.7 GHz, the PA output power level reaches +23 dBm with a power added efficiency of 61% and a power gain of 14 dB. Designed and realized on fully CMOS compatible technology, this PA facilitates future SoC solutions for architecture plus PA circuits

Made available in DSpace on 2017-07-21T20:42:46Z (GMT). No. of bitstreams: 1 Mauricio Marlon Mazur.pdf: 3613957 bytes, checksum: 0b5adb9ffe8a242c568978a647c5e384 (MD5) Previous issue date: 2014-04-16 / Instituto de Tecnologia para o Desenvolvimento / Ceramic electric insulators are fundamental support devices for electric energy distribution due to its mechanical resistance and dielectric properties. The presence of atmospheric humidity and pollutants can reduce the dielectric property. To achieve an auto cleaning surface or hydrophobic properties, the insulator must have low contact angle and low hysteresis with water. Although, the insulator vitreous surface layer possess great interaction affinity with environmental water. At the present work, aluminum nitride thin films were deposited on the vitreous protective layer of ceramic electric insulators. For this, a pulsed magnetron sputtering plasma was employed, with direct current (DC), and moisture of argon and nitrogen gases. An aluminum target with 99.999% purity was used as precursor. Continuous films deposited produced with Ar and N2 presented about 2 μm thickness, while the films produced with 100% N2 presented around 1 μm, both for the same treatment time. Low exposure times lead to depositions on surface defects and porosity of the insulator vitreous body and showed nanosize island growth (166, 155, 100 nm). The films thickness and surface characterization was performed with field emission scanning electron microscopy (FEG) and atomic force microscopy (AFM). Raman spectroscopy and X-ray diffraction showed the formation of an amorphous aluminum nitride film. The continuous film produced with 100% N2 presented 82.7° water drop contact angle, while the non-continuous film presented in average 67°. According to ASTM D7334-08, these films are hydrophobic. Roughness was not a determinative parameter for surface wettability, but the deposited film surface energy. To measure the contact angle a goniometer was developed. A four point probe was used to measure the electric resistivity for a semi-infinite surface. The Ar and N2 continuous film surface resistivity was 656/. For the nanosize films the surface resistivity was about M/. / Isoladores elétricos cerâmicos são dispositivos de suporte fundamentais para distribuição de energia elétrica, devido a sua resistência mecânica e a sua propriedade dielétrica. A presença tanto de umidade, como de poluentes na atmosfera, reduz essa capacidade. Com o intuito de se obter uma propriedade autolimpante ou hidrofóbica a superfície deve apresentar um baixo ângulo de contato com a água e possuir baixa histerese. No entanto, o vidrado do isolador apresenta uma grande afinidade com a água resultante da interação da superfície do vidro com a atmosfera. No presente trabalho, foi realizada a deposição de filmes de nitreto de alumínio sobre o vidrado de proteção do isolador elétrico cerâmico. Para isto, um plasma magnetron sputtering pulsado, de corrente contínua (CC), foi utilizado com a mistura dos gases argônio e nitrogênio. Como precursor de alumínio foi utilizado um alvo de 99,999% de pureza. Os filmes contínuos produzidos com Ar e N2 apresentaram espessura de, aproximadamente, 2 μm, enquanto os filmes produzidos com 100% de N2 possuem espessura de aproximadamente 1μm, ambos com o mesmo tempo de tratamento. Os filmes depositados sobre a superfície do vidrado com baixos tempos de exposição apresentaram crescimento em ilhas com tamanho nanométrico (166, 155, 100 nm) sobre os defeitos e as porosidades do corpo do isolador. A caracterização da espessura do filme e da superfície foi realizada com técnicas de microscopia eletrônica de varredura de efeito de campo (FEG) e microscopia de força atômica (AFM). Análises de espectroscopia Raman e de difração de raios X indicaram a formação de um filme de nitreto de alumínio (AlN) amorfo. O filme contínuo utilizando apenas N2 apresentou um ângulo de contato com a gota de água de 82,7°, enquanto os filmes não contínuos apresentaram em média 67°. Em acordo com a norma ASTM D7334-08 os filmes apresentam propriedade hidrofóbica. A rugosidade superficial não foi um fator determinante na molhabilidade superficial e sim a energia de superfície do filme depositado. Para a medição do ângulo de contato (Ɵ) foi desenvolvido um goniômetro. As propriedades da resistividade dos filmes para superfícies semi-infinitas foi adquirida pela técnica de sonda quatro pontas. A resistividade superficial do filme contínuo com Ar e N2 foi de 656/. Para os filmes nanoestruturados a resistividade superficial foi da ordem de M/.

Dans cette thèse, nous explorons des matériaux basés sur le bismuth qui peuvent présenter des propriétés topologiques. Bi est un composant d’Isolants Topologiques identifiés qui consistent en un volume isolant tout en présentant aussi des états électroniques conducteurs en surface topologiquement protégés. En particulier, ces états de surface sont polarisés en spin et sont protégés par la symétrie du renversement du temps. L’attrait des Isolants Topologiques découle non seulement de leur intérêt évident du point de vue de la physique fondamentale, mais aussi du fait qu’ils puissent trouver une application en spintronics et dans les ordinateurs quantiques.Dans ces systèmes, le couplage spin-orbit joue un rôle central. Le couplage spin-orbit peut aussi mener à la levée de dégénérescences de Rashba ou de Dresselhaus, phénomènes découlant de la brisure en symétrie respectivement engendrée par la surface/interface d’un système ou de l’inhérente structure cristalline atomique.L’interprétation de mesures de structures de bandes dépendantes du spin, comme observées par spectroscopie par photoemission résolue en angle (et en spin), est appuyée et complémentée par des calculs ab-initio Korringa-Kohn-Rostoker de la structure électronique qui incluent tous les aspects des systèmes examinés : en particulier le couplage spin-orbit, fondamentalement compris grâce à une approche entièrement relativiste.Nous avons d’abord déposé des couches minces de Bi sur un substrat d’InAs(111). Un cristal de Bi de très bonne qualité est obtenu, confirmé par la reproduction par étude théorique des bandes électroniques mesurées. En parallèle de la croissance de la couche de Bi, nous observons que l’In et le Bi forment des cristaux d’InBi, exposant des états de surface topologiques. Nos analyses théoriques confirment que ces états de surface sont polarisés en spin.Dans la seconde partie de la thèse, Bi est utilisé comme un dopant dans InAs, donnant un alliage d’InAsBi. L’intense couplage spin-orbit apporté par le Bi génère simultanément des effets Rashba et Dresselhaus mesurables, levant par conséquence la dégénérescence des états de surface de manière complètement atypique, donnant des états non-hélicoïdaux polarisés en spin. / In this thesis, we explore bismuth based materials that may exhibit topological properties. Bi is a parent compound of known Topological Insulators which consist of an insulating bulk while also presenting topologically protected conducting electronic surface states. In particular, these surface states are spin polarised and are protected by time-reversal symmetry. The dual appeal of topological insulators stems not only from their obvious interest from a fundamental physics point of view, but also from the fact that they may find use in spintronics and quantum computing.In those systems the spin-orbit coupling plays a central role. Spin-orbit coupling can also lead to the Rashba or Dresselhaus splitting, phenomena arising from the symmetry breaking respectively engendered by the surface/interface of a system or from the inherent atomic crystal structure.The interpretation of measured spin dependent band structure, as observed in (Spin-) and Angle-Resolved Photoemission Spectroscopy, was supported and completed by ab-initio Korringa-Kohn-Rostoker electronic structure calculations which account for all aspects of the investigated systems: in particular spin-orbit coupling, fundamentally included thanks to a fully relativistic approach.We first deposited Bi thin films onto a InAs(111) substrate. A crystal of Bi of very high quality was grown, confirmed by reproduction of the measured electronic bands by theoretical investigation. In parallel to Bi film growth, we observed that In and Bi form InBi crystals, exhibiting topological surface states. Our theoretical analyses confirm that these surface states are spin polarised.In the second part of the thesis, Bi was used as a dopant within InAs, forming an InAsBi alloy system. The strong spin-orbit coupling brought on by Bi generated simultaneously measurable Rashba and Dresselhaus effects, consequently splitting surface states in a completely atypical manner, giving non-helical spin polarised states.

La technologie Smart Cut™ est un procédé générique de transfert de couches minces utilisé pour la fabrication des substrats silicium sur isolant (SOI) à l’échelle industrielle. L’implantation d’ions légers dans un substrat de silicium oxydé mène à la formation d’une zone fragilisée enterrée au sein du cristal. Ce substrat implanté est ensuite solidarisé à un support mécanique grâce à la technique de collage par adhésion moléculaire. Sous l’effet de la température, les espèces implantées évoluent sous la forme de microfissures qui se développent de manière parallèle à la surface. Après recuit, une fracture se déclenche au niveau de la zone implantée et permet le report de la fine couche monocristalline. L’objet de cette thèse est d’étudier l’aspect dynamique de cette étape de fracture.Pour ce faire, la vitesse de rupture et la déformation des plaques à l’arrière du front de fracture ont tout d’abord été mesurées à l’aide d’un montage optique original qui a ensuite été étendu aux études sur plaque entière 300mm. Ces données ont ensuite été modélisées. Dans un deuxième temps, l’interaction entre le front de fracture et des ondes acoustiques émises dynamiquement au cours de sa propagation a été étudiée. Celle-ci conduit à l’apparition récurrente d’un motif périodique sur le faciès de rupture qui consiste en une très faible variation de rugosité sur de très grandes périodes (mm). Des mesures expérimentales permettent tout d’abord de mettre en évidence cette émission acoustique et d’étudier ses caractéristiques. La modélisation physique du phénomène puis sa simulation numérique permettent ensuite de retrouver la forme typique de ce motif. Enfin, des solutions technologiques sont proposées pour empêcher son apparition sur le faciès de rupture des plaques SOI. / The Smart Cut™ technology is a generic way of transferring very thin layers of crystalline material onto a mechanical substrate. It is currently the industrial standard for Silicon On Insulator (SOI) manufacturing. The implantation of relatively high doses of gas ions in a thermally oxidized silicon substrate leads to the formation of a buried weakened layer in the crystal. The implanted wafer is then bonded onto a host substrate using direct wafer bonding. Under annealing, the implanted species evolve into microcracks lying parallel to the surface, and a controlled fracture process finally occurs along the implanted layer. The aim of this thesis is to study the dynamics of this fracture step.First of all, the fracture velocity and the deformation profile behind the crack tip have been measured using an original optical setup, which has been extended to full wafer studies. A model has been established to explain these data. Then, the interaction of the fracture front with self-generated acoustic waves has been studied. This interaction leads to the appearance of a macroscopic periodic pattern on post-split SOI wafers which is made of small variations of the SOI roughness on very large periods (mm). Experimental studies are first carried out to look at the fracture acoustic emission for different experimental conditions. Numerical simulations based on acoustic phase calculations are then performed to recover the typical pattern shape, with results consistent with experimental data. Finally, technologic solutions are proposed to prevent the pattern formation on the post-split SOI wafers.

Les phases topologiques sont des phases qui existent au delà du paradigme de Ginzburg-Landau qui dominait jusqu’à présent la compréhension des phases et transitions de phases qui apparaissent dans les systèmes de matière condensée. Des exemples paradigmatiques ont été créés pour établir un nouveau socle théorique qui rend compte de cet aspect topologique. La phase de Haldane de spin 1 est l’exemple souvent retenu pour les systèmes unidimensionnels.La présente thèse propose d’étudier cette phase et de lui trouver des généralisations en se concentrant sur l’étude d’un moyen de l’implémenter expérimentalement à l’aide d’atomes alcalino-terreux fermioniques ultra-froids qui présentent la symétrie SU(N). Le modèle qui explique cette expérience, dit de double-puits car il décrit un réseau de deux chaînes en interactions, est analysé dans son régime de couplage faible, de couplage fort et par l’outil numérique. Au demi-remplissage, et dans le régime où les répulsions entre particules au sein d’un même puits, et entre puits qui se font face, sont importantes, une phase topologiqueprotégée par la symétrie de type Haldane est systématiquement attendue pour tout N, dont la phase "chirale" Haldane. Le modèle effectif obtenu lorsque N Æ 3, l’échelle de spin 3-3bar (à deux chaînes de spins, l’une dans la représentation fondamentale de SU(3), l’autre dans sa représentation conjuguée), y est détaillée. / Topological phases exist beyond the standard Ginzburg-Landau paradigmthat dominated the understanding of phases and phase transitions in condensed matter systems. Paradigmatic examples have been derived to establish a new theoretical basis that takes into consideration these topological aspects. The spin 1 Haldane phase is one of them for the unidimensional case. The present thesis aims to study this phase as well as its suggested generalizations by focusing on a way to implement them experimentally using ultracold fermionic alkaline-earth atoms, that involve an internal SU(N) symmetry. The model describing the experiment is called the double-well model and depicts a lattice of two interacting chains. The model is analysed at weak coupling, strong coupling and using a numerical tool. At half-filling and inthe regime of srong repulsions between particles in the same well as well as two facing wells, a Haldane-like symmetry-protected topological phase is systematically expected for all N, including the "chiral" Haldane phase. The effective model obtained when N Æ 3 is the 3-3bar ladder model (describing two spin chains, one in the fondamental representation of SU(N), and the other in its conjuguate) and is particulary explored.

Le développement des transistors organiques, ces dernières années, a permis une nette amélioration de leurs performances et de leur stabilité. Ceci a été possible, notamment, grâce à une meilleure compréhension des mécanismes régissant le transport de charges dans ces dispositifs. Cependant, certains phénomènes restent encore à éclaircir, en particulier au niveau de l’interface entre le semi-conducteur et le diélectrique. Le piégeage des porteurs de charges qui est une des principales causes de perturbations du transport de charges dans les transistors organiques, en est un. Cette thèse se propose donc, d’étudier ce phénomène dans des transistors à base de pentacène.Les groupements polaires, et plus particulièrement les groupements hydroxyles, présents à l’interface entre l’isolant et le semi-conducteur, sont les principaux responsables du piégeage des porteurs de charges dans les transistors organiques. Afin de limiter leur présence, une technologie basée sur l’emploi d’une couche interfaciale diélectrique passivante, pauvre en groupements hydroxyles, à base de fluorure de calcium, a été mise en place. L’influence de cette couche sur le comportement de transistors à base de pentacène a été étudiée, de même que le vieillissement de ces dispositifs sous différentes conditions de stockage (sous vide et à l’air) et sous contrainte électrique.Ainsi, il a été mis en évidence qu’une couche de fluorure de calcium d’une épaisseur trop importante (de l’ordre de 5 nm) modifie la morphologie de la couche de pentacène, ce qui se traduit par une quasi-disparition du transport de charges dans le pentacène en configuration de transistor à effet de champ. Les études de vieillissement ont montré que sous l’effet de la couche interfaciale de CaF2, même d’une très fine épaisseur (de quelques nanomètres), une quantité plus importante d’humidité est présente dans la couche de pentacène, probablement à cause de la nature hygroscopique du fluorure de calcium. / These recent years, Organic Field-Effect Transistor (OFET) development has significantly improved it performances and it stability. This was made possible, through a better understanding of the mechanisms governing charge transport in these devices. However, some phenomena remain unclear, in particular, at the interface between the semiconductor and the dielectric. Charge carrier trapping which is one of the main causes of charge transport disturbance in organic transistors, is one of them. So, this work aims to investigate such phenomena in pentacene-based transistors.Polar groups and particularly, hydroxyl groups, located at the insulator-semiconductor interface, are the main sources of charge carriers trapping in OFET. To prevent their presence, an OFET fabrication technology based on a passivating dielectric, poor of hydroxyl groups, calcium fluoride-based interfacial layer has been developed. Effect of this layer on pentacene-based transistors operation has been studied, as well as these devices aging under different storage atmosphere (in vacuum and in air) and under electrical stress.Thus, it has been highlighted that an interfacial layer of calcium fluoride with a too high thickness (around 5 nm) changes pentacene layer morphology which results in a quasi-disappearance of charge transport in pentacene in OFET configuration. Aging studies showed that under the effect of CaF2 interfacial layer, even with a very thin thickness (a few nanometers), a greater quantity of moisture is induced in pentacene layer probably due to the hygroscopic nature of calcium fluoride.

The objective of this dissertation is to develop amorphous metal thin films (AMTFs) for two-terminal electrical device and nanolaminate applications. Two AMTFs, ZrCuAlNi and TiAl, are investigated in both two-terminal electrical device and nanolaminate applications. Material properties including composition, atomic order, surface morphology, surface potential, and electrical resistivity are explored. Application of AMTFs as electrodes in tunneling MIM diodes leverages the ultra-smooth AMTF surface morphology which results from the amorphous atomic order of AMTFs. Analysis methodologies using tunneling MIM diode I-V characteristics are described. A methodology used to estimate potential barrier heights is applied to tunneling MIM diode with differing lower electrode material, upper electrode material and upper electrode deposition technique. A second methodology used to estimate relative tunneling MIM diode insulator thickness is also presented. The presented I-V characteristic analysis methodologies illustrate that tunneling MIM diodes fabricated with AMTF lower electrodes possess tunable I-V characteristics. Nanolaminates are layered materials fabricated with alternating dissimilar thin-film layers. The flexibility of AMTF nanolaminates is illustrated through the presentation of amorphous metal/oxide nanolaminates fabricated with differing AMTFs and aqueous solution deposited oxides. TEM and XPS depth profile analysis of realized nanolaminates are presented. The optical dielectric response of ZrCuAlNi/aluminum phosphate oxide (AlPO) and TiAl/AlPO nanolaminates are evaluated through polarized reflectance measurements and effective medium theory. The optical dielectric response of the nanolaminates differ from the optical dielectric response of the component layers. ZrCuAlNi/AlPO and TiAl/AlPO nanolaminates therefore satisfy the definition of metamaterials. / Graduation date: 2012 / Access restricted to the OSU Community at author's request from May 9, 2012 - May 9, 2013

Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point of view. We have demonstrated both structures on SGOI, and have fabricated n-MOSFET’s and p-MOSFET’s on those two structures respectively. Device characteristics are presented. The devices show enhancement on both electron and hole mobilities. / Singapore-MIT Alliance (SMA)