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Electric Field Sensing in a Railgun Using Slab Coupled Optical Fiber SensorsNoren, Jonathan Robert 27 March 2012 (has links) (PDF)
This thesis discusses the application of Slab Coupled Optical Fiber Sensors (SCOS) in a railgun. The specific goal of these sensors is to create an electric field profile at a specific point in the gun as the armature passes. The thesis explores the theory that powers the railgun as well as the principles of the SCOS sensors. It also elaborates on the various noise sources found throughout the detection system and concludes with a summary of the various field tests that were performed throughout this project. There are many benefits to using a railgun over traditional weapons in the field. These benefits not only include both safety and cost, but also greater overall defense capabilities. Unfortunately, the velocity skin effect (VSE) causes the current railgun designs to have limited life span through wear on the rails. In order to develop superior railguns and railgun armatures, the accurate detection of the VSE through measuring the electric field is of great interest. We used a SCOS, a small directionally precise dielectric sensor, as a small sensing area is required to be able to measure the electric fields inside of the rail gun. The actual usage of the SCOS within the railgun produced an additional set of problems that are not commonly encountered in the lab. The chief amongst these was noise from strain, RF pickup, and phase noise. This thesis also reports various methods used to reduce each of these noise sources.
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Dispositif de magnétomètres pour la mesure de courant en exploitant les harmoniques d’espace : application aux réseaux électriques / Magnetic field sensor arrays for current determination using spatial harmonics : application to measurements in electrical gridsWilsch, Benjamin 31 March 2016 (has links)
L'évolution des réseaux électriques d'une transmission de puissance unidirectionnelle classique vers un réseau diversifié avec, une grande variété de consommateurs et producteurs d'électricité, requiert le développement des technologies de mesure et de communication avancés et/ou nouvelles. Dans le cadre du projet SOGRID, une méthode innovante de mesure de courant a été développée pour enrichir la gamme existante des capteurs de courant et pour faciliter l’installation dans le réseau électrique. En effet, le capteur innovant développé ici est non seulement non-intrusif, mais peut également être déporté du câble.Dans les réseaux électriques, l'obstacle principal pour une mesure précise du courant est la nature triphasée de transmission de puissance. Un capteur de courant qui doit être utilisé dans le réseau électrique doit donc fournir une sélectivité géométrique entre les différentes phases. Les solutions commerciales existantes sont dites non-intrusives, mais nécessitent tout de même de venir entourer le conducteur d'intérêt pour mesurer le champ le long d'un chemin fermé. Ces solutions comprennent des bobines de Rogowski et les mesures en boucle fermée avec des capteurs de champs comme les magnétorésistances, les capteurs à effet Hall ou les fluxgates. Toutefois, un placement autour du conducteur limite la miniaturisation requise par le développement des réseaux intelligents : des capteurs miniatures peuvent être intégrés avec d'autres unités de mesure et de transmission de données pour permettre le suivi et le contrôle des réseaux intelligents modernes avec une maille plus dense.Afin de rependre à ces exigences, et pour améliorer la sélectivité géométrique des conducteurs, une méthode de mesure de courant basée sur la décomposition du champ en harmoniques spatiales a été développée dans cette thèse.Cette décomposition est basée sur le développement du champ magnétique à l'intérieur d'une région défini avec une série de fonctions périodiques angulaires, une loi d’évolution radiale particulière et des coefficients de développement correspondants, de sorte que la somme des ordres (théoriquement infini) de développement reconstruit le champ avec précision. Si ce développement est effectué pour une région sans sources, qui est donc entouré des sources de champ, il est défini comme une décomposition interne, qui utilise des fonctions croissantes du rayon, à partir du centre de décomposition en direction de la source de champ. Le procédé de mesure de courant est basé sur la détermination des coefficients de développement pour les différents ordres, dans lequel les ordres supérieurs présentent une dépendance réduite aux sources de perturbation (plus éloignes du conducteur d’intérêt). La relation entre ces coefficients et le courant d'intérêt est linéaire et défini par des facteurs de transfert.Afin d'exploiter la sélectivité géométrique accrue des ordres supérieurs, il est nécessaire d'effectuer un nombre suffisant de mesures du champ magnétique sur la limite d'une région appropriée afin de déduire les coefficients de développement à partir de la résolution d'un problème inverse. La taille et le positionnement de ce réseau de capteurs jouent des rôles essentiels dans la détectabilité des contributions d'ordre supérieur. Des prototypes appropriés pour une décomposition en 2D (pour les conducteurs rectilignes) et en 3D (pour les conducteurs avec des chemins arbitraires) ont été conçus, mis en œuvre et ensuite testés en laboratoire au cours de cette thèse.D'autres développements se concentrent sur la détermination des facteurs de transfert caractéristiques. En effet, tandis que ceux-ci peuvent être facilement déterminés si un courant contrôlé connu est introduit dans le conducteur, une méthode qui permet de les retrouver dans des conditions d'opération réelles doit être développée pour des applications industrielles. Afin de répondre à ce besoin, une méthode de calibration appropriée est aussi présentée dans cette thèse. / The evolution of electrical grids from conventional unidirectional power transmission to diverse networks with a large variety of electricity consumers and producers requires the development of advanced and/or novel measurement and communication technologies, in order to create smart grids. As a part of the SOGRID project, an innovative current measurement method was developed to supplement the existing range of current sensors and to facilitate the installation, since the sensor is not only non-intrusive but can also be located at a distance from the cable.The primary obstacle for precise current measurement in power grids is the three-phase nature of power transmission. A current sensor that is to be employed in the electrical grid must therefore provide geometrical selectivity between the individual phases. Existing commercial current sensors are non-intrusive but require placement around the conductor of interest, e.g. to measure the field along a closed path. Solutions include Rogowski coils, magnetoresistors, Hall effect or fluxgate sensors as well as magneto-optical solutions. However, a placement around the conductor limits the miniaturization required by smart grid development: miniature sensors can be integrated with other measurement and data transmission units, thus enabling the densely meshed monitoring and control of modern smart grids. In order to avoid these restrictions and to improve geometrical selectivity, a current measurement method based on the decomposition of the field into spatial harmonics has been developed in this thesis. The measurement principle allows for the fabrication of innovative current sensors that can be installed besides the conductor.The decomposition of the magnetic field into spatial harmonics is based on the development of the magnetic field within a defined area/volume in a series of products of periodic functions, a radial dependence and corresponding development coefficients, so that the sum of the (in theory infinite number of) development orders reconstructs the field accurately. If this development is performed for a source-free region besides the source of the field, it is defined as an internal decomposition, which uses functions that increase from the center of decomposition toward the field source. The current measurement process is based on the determination of the development coefficients for the various orders, wherein higher orders exhibit a reduced dependence on perturbing sources (as long as the field measurements are performed closer to the conductor of interest than to the perturbing conductor). The relation between these coefficients and the current of interest is linear and defined by transfer factors.In order to exploit the increased geometrical selectivity of higher orders, it is necessary to perform a sufficient number of magnetic field measurements on the boundary of a suitable area/volume in order to derive the development coefficients from the solution of an inverse problem. The size and positioning of this sensor array also plays a vital role in the detectability of higher order contributions to the field. Suitable 2D (for straight conductors) and 3D (for arbitrary conductor paths) prototypes were designed, implemented and subsequently tested in the laboratory during this thesis.Further developments focus on determining the characteristic transfer factors. While these can be easily determined if a known controlled current is induced in the conductor, a method that allows for their determination under real operating conditions must be developed for industrial applications. A suitable calibration method is presented in this thesis.
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Planar Hall Effect : Detection of Ultra Low Magnetic Fields and a Study of Stochasticity in Magnetization ReversalRoy, Arnab January 2015 (has links) (PDF)
In the present thesis, we have explored multiple aspects concerning the stochasticity
of magnetic domain wall motion during magnetization reversal, all of which
originated from our initial study of magnetic field sensing using planar Hall effect.
Magnetic field sensors occupy a very important and indispensable position in modern technology. They can be found everywhere, from cellphones to automobiles,
electric motors to computer hard disks. At present there are several emerging areas
of technology, including biotechnology, which require magnetic field sensors which
are at the same time simple to use, highly sensitive, robust under environmental
conditions and sufficiently low cost to be deployed on a large scale. Magnetic field
sensing using planar Hall effect is one such feasible technology, which we have explored
in the course of the thesis. The work was subsequently expanded to cover some fundamental aspects of the stochasticity of domain wall motion, studied with planar Hall effect, which forms the main body of work in the present study.
In Chapter 1, we give an introduction to the phenomenology of planar Hall effect, which is the most important measurement technique used for all the subsequent studies. Some early calculations, which had first led to the understanding of anisotropic magnetoresistance and planar Hall effect as being caused by spin-orbit
interaction are discussed.
In Chapter 2, we discuss briefly the experimental techniques used in the present
study for sample growth and fabrication, structural and magnetic characterization,
and measurement. We discuss pulsed laser ablation, which is the main technique
used for our sample growth. Particular emphasis is given to the instrumentation
that was carried out in-house for MOKE and low field magnetotransport (AMR
and PHE) measurement. This includes an attempt at domain wall imaging through
MOKE microscopy. Some of the standard equipments used for this work, such as
the SQUID magnetometer and the acsusceptometer are also discussed in detail.
In Chapter 3 we discuss our work on planar Hall sensors that led to the fabrication
of a device with a very simple architecture, having transfer characteristics of
650V/A.T in a range of _2Oe. The sensing material was permalloy (Ni81Fe19), and
the value had been obtained without using an exchange biased pinning layer. Field
trials showed that the devices were capable of geomagnetic field sensing, as well as
vehicle detection by sensing the anomaly in Earth's magnetic field caused by their
motion. Its estimated detection threshold of 2.5nT made it well suited for several
other applications needing high sensitivity in a small area, the most prominent of
them being the detection of macromolecules of bio-medical significance.
Chapter 4: The work on Barkhausen noise was prompted by reproducibility problems faced during the sensor construction, both between devices as well as within the same device. Study of the stochastic properties led us to the conclusion that the devices could be grouped into two classes: one where the magnetization reversal occurred in a single step, and the other where it took a 0staircase0 like path with multiple steps. This led us to simulations of Barkhausen noise using nucleation models like the RFIM whence it became apparent that the two different groups of samples could be mapped into two regimes of the RFIM distinguished by their magnetization reversal mode. In the RFIM, the nature of the hysteresis loop depends on the degree of disorder, with a crossover happening from single-step switching to multi-step switching at a critical disorder level. Appropriate changes also appear in the Barkhausen noise statistics due to this disorder-induced crossover. By studying the Barkhausen noise statistics for our permalloy samples and comparing them with simulations of the RFIM, we found nearly exact correspondence between the two experimental groups with the two classes resulting from crossing the critical disorder.
What remained was to quantify the 0disorder0 level of our samples, which was done
through XRD, residual resistivity and a study of electron-electron interaction effects
in the resistivity. All these studies led to the conclusion that the samples reversing
in multiple steps were more 0defective0 than the other group, at par with the model
predictions. This completed the picture with respect to the modeling of the noise. In
experiments, it was found that a high rate of film deposition yielded less 0defective0
samples, which severed as an important input for the sensor construction.
These results can be viewed from a somewhat broader perspective if we consider the present scenario in the experimental study of Barkhausen noise, or crackling noise in general. Two classes of models exist for such phenomena: front propagation models and nucleation models. Both appear to be very successful when it comes to experiments with bulk materials, while the comparison with experiments on thin films is rather disappointing. It is still not clear whether the models are at fault or the experiments themselves. Through our study, we could demonstrate that there can be considerable variation in the Barkhausen noise character of the same material deposited in the same way, and what was important was the degree of order at the microscopic level. This may be a relevant factor when experimental papers report non-universality of Barkhausen noise in thin films, which can now be interpreted as either insufficient defects or a sample area too small for the study.
Chapter 5: Defects in a sample are not the only cause for stochastic behavior
during magnetization. In most cases, random thermal 0events0 are also an important
factor determining the path to magnetization reversal, which was also true for our
permalloy samples. We studied the distribution of the external fields at which
magnetization reversal took place in our samples, and tried to explain it in terms
of the popular Neel-Brown model of thermal excitation over the anisotropy barrier.
The analysis showed that even though the coercivity behaved 0correctly0 in terms
of the model predictions, the behavior of the distribution width was anomalous.
Such anomalies were common in the literature on switching field distributions, but
there seemed to be no unified explanation, with different authors coming up with
their own 0exotic0 explanations. We decided to investigate the simplest situations
that could result in such a behavior, and through some model-based calculations,
came to the conclusion that one of the causes of the anomalies could be the different
magnitudes of barrier heights/anisotropy fields experienced by the magnetic domain
wall when the reversal occurs along different paths. Though an exact match for the
behavior of the distribution width could not be obtained, the extended Neel-Brown
model was able to produce qualitative agreement.
Chapter 6 contains a study of some interesting 0geometrical0 effects on Barkhausen noise of iron thin films. By rotating the applied magnetic field out-of plane, we could observe the same single-step to multi-step crossover in hysteresis loop nature that was brought about by varying disorder in Chapter 4. We could explain this through simulations of a random anisotropy Ising model, which, apart from exhibiting the
usual disorder induced crossover, showed a transition from sub-critical to critical
hysteresis loops when the external field direction was rotated away form the average
anisotropy direction. Once again, simulation and experiment showed very good agreement in terms of the qualitative behavior.
In the second part of this chapter, a study of exchange biased Fe-FeMn system was carried out, where it was observed that the reversal mode has been changed from domain wall motion to coherent rotation. Barkhausen noise was also suppressed.
Though many single-domain models existed for this type of reversal, our system was not found to be strictly compatible with them. The disagreement was with regard to the nature of the hysteresis, which, if present, had to be a single step process for a single domain model. The disagreement was naturally attributed to interaction with the nearby magnetic moments, to verify which, simulations were done with a simplified micromagnetic code, which produced excellent agreement with experiment.
In Chapter 7, we have studied the temporal properties of Barkhausen avalanches, to compare the duration distributions with simulation. We had used a permalloy
sample that was sub-critical according to avalanche size distributions, and our measurement was based on magneto-optic Kerr effect. We measured duration distributions
which showed a similar manifestation of finite-size effects as were shown by the size distributions. The power law exponent was calculated, which was deemed 0reasonable0 upon comparison simulations of the sub-critical RFIM.
Appendix A contains a study of high-field magnetoresistance of permalloy, which shows that the dominant contribution to magnetoresistance is the suppression
of electron-magnon scattering. An interesting correlation is observed between the
magnetization of samples and an exchange stiffness parameter d1, that was extracted
from magnetoresistance measurements. Here we also re-visit our earlier observation
of permalloy thin films possessing a resistance minimum at low temperature. The
origin of this minimum is attributed to electron-electron interaction.
Appendix B contains the source codes for most of the important programs used for simulation and data analysis. The programs are written in MATLAB and FORTRAN 95. LabView programs used for data acquisition and analysis are not included due to space requirements to display their graphical source codes.
Appendix C discusses the studies on a disordered rare-earth oxide LaMnO3.
The re-entrant glassy phase is characterized with ac susceptibility and magnetization
measurements to extract information about the nature of interactions between the
magnetic 0macrospins0 in the system.
Appendix D deals with electron scattering experiments performed with spinpolarized
electrons (SPLEED) from clean metal surfaces in UHV. A study of the scattering cross sections as a function of energy and scattering angle provides information
about spin-orbit and exchange interactions of the electrons with the surface atoms, and can answer important questions pertaining to the electronic and magnetic structure of surfaces.
In the course of this study, planar Hall effect is seen to emerge as a powerful tool
to study the magnetic state of a thin film, so that it is interesting to apply it to thin
films of other materials such as oxides, where magnetization noise studies are next
to nonexistent. What also emerged is that there is still a lot of richness present in
the details of supposedly well-understood magnetization phenomena, some of which
we have explored in this thesis in the context of stochastic magnetization processes.
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Positioning Electric Field Sensors in the Marine Environment Using Passage DataLangkilde, Maria January 2021 (has links)
When underwater sensors are being deployed there is always some uncertainty about the actual position of the sensors. The most common way of determine the sensors position is the use of hydro-acoustic methods. However, for electric field sensors the most favourable would be to use the sensor system itself. The first question being answered in this report is whether it is possible to position electric field sensors with the sensor system itself, and the answer is yes. An algorithm has been developed which calculates the relative position of the sensors based on data measured by the sensors when a dipole passes the sensor group. The algorithm extracts zero crossings of the z-components of the electric field measured by each sensor from the data, which are converted to moments in time, multiplied by the speed and course of the vessel and finally calculated into relative position vectors between the sensors using vector algebra. The result of the predicted relative position is within 0.2 m from the sensors’ actual position, which answers the second question about how accurate the method is. However, the error estimation is within a couple of centimetres indicating that there are other sources of error than speed and course. The third question being answered is whether the method is better than acoustic methods, and the answer is no. Nonetheless, the methods are within the same order of magnitude. In conclusion, the method has acceptable performance, especially considering the fact that it can determine the position of the sensors with the sensor system itself which could be significant.
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Magnetic field separation for current prediction in three-phase systems : Regression-based current predictionLenman, Sara, Blaad, Sofia January 2023 (has links)
Current controls the motion of a manipulator. The manipulators at ABB are powered by a three-phase alternating current system where shunt resistors are utilised to measure the current to the motors. Magnetic field sensors are instead investigated to eliminate issues with power losses, the number of components and the cost of the shunt resistors. Since current produces a magnetic field, it can be measured without contact using a magnetic field sensor. However, employing non-contact magnetic field sensors in three-phase implementations introduces problems with stray magnetic fields due to the three traces being in close proximity to each other. This magnetic crosstalk will influence the sensors, hence the current measurement for each trace. In this thesis separating this influence of the magnetic fields is done through a software approach. Initially, two magnetic field sensors, a tunnel magnetoresistance sensor and a Fluxgate sensor, were tested and evaluated to gain knowledge and understanding. From the different tests, it was decided to continue with the Fluxgate sensor. Further, a partial least-squares regression was constructed to separate the magnetic field and predict the current in each trace from the Fluxgate sensor output. From a simulation created, the current could be predicted with an error of approximately 1 nA, meaning less than 0.1% when considering a simulated linear model of the Fluxgate sensor.
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Electro-Optic Ring Resonators in Integrated Optics For Miniature Electric Field SensorsRuege, Alexander Charles 16 December 2011 (has links)
No description available.
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Multifunctional Droplet-based Micro-magnetofluidic DevicesLin, Gungun 23 August 2016 (has links) (PDF)
Confronted with the global demographic changes and the increasing pressure on modern healthcare system, there has been a surge of developing new technology platforms in the past decades. Droplet microfluidics is a prominent example of such technology platforms, which offers an efficient format for massively parallelized screening of a large number of samples and holds great promise to boost the throughput and reduce the costs of modern biomedical activities. Despite recent achievements, the realization of a compact and generic screening system which is suited for resource-limited settings and point-of-care applications remains elusive.
To address the above challenges, the dissertation focuses on the development of a compact multifunctional droplet micro-magnetofluidic system by exploring the advantages of magnetic in-flow detection principles. The methodologies behind a novel technique for biomedical applications, namely, magnetic in-flow cytometry have been put forth, which encompass magnetic indexing schemes, quantitative multiparametric analytics and magnetically-activated sorting. A magnetic indexing scheme is introduced and intrinsic to the magnetofluidic system. Two parameters characteristic of the magnetic signal when detecting magnetically functionalized objects, i.e. signal amplitude and peak width, providing information which is necessary to perform quantitative analysis in the spirit of optical cytometry has been proposed and realized. Magnetically-activated sorting is demonstrated to actively select individual droplets or to purify a population of droplets of interest. Together with the magnetic indexing scheme and multiparametric analytic technique, this functionality synergistically enables controlled synthesis, quality administration and screening of encoded magnetic microcarriers, which is crucial for the practical realization of magnetic suspension arrays technologies. Furthermore, to satisfy the needs of cost-efficient fabrication and high-volume delivery, an approach to fabricate magnetofluidic devices on flexible foils is demonstrated. The resultant device retains high performance of its rigid counterpart and exhibits excellent mechanical properties, which promises long-term stability in practical applications.
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Exploration of Displacement Detection Mechanisms in MEMS SensorsThejas, * January 2015 (has links) (PDF)
MEMS Sensors are widely used for sensing inertial displacements. The displacements arising out of acceleration /Coriolis effect are typically in the range of 1 nm-1 m. This work investigates the realization of high resolution MEMS inertial sensors using novel displacement sensing mechanisms.
Capacitance sensing ASIC is developed as part of conventional electronics interface with MEMS sensor under the conventional CMOS-MEMS integration strategy. The capacitance sense ASIC based on Continuous Time Voltage scheme with coherent and non-coherent demodulation is prototyped on AMS 0.35 m technology. The ASIC was tested to sense C = 3.125 fF over a base of 2 pF using on-chip built-in test capacitors. Dynamic performance of this ASIC was validated by interfacing with a DaCM MEMS accelerometer. 200milli-g of acceleration (equivalent to a C = 2.8 fF) over an input frequency of 20Hz is measurable using the developed ASIC. The observed sensitivity is 90mV/g. The ASIC has several programmable features such as variation in trim capacitance (3.125 fF-12.5 pF), bandwidth selection (500 Hz-20 kHz) and variable gain options (2-100).
Capacitance detection, a dominant sensing principle in MEMs sensors, experiences inherent limitation due to the role of parasitics when the displacements of interest are below 5 nm range. The capacitive equivalence ( C) for the range of displacements of the order of 5 nm and below would vary in the range atto-to-zepto farad. Hence there is a need to explore alternative sensing schemes which preferably yield higher sensitivity (than those offered by the conventional integration schemes) and are based on the principle of built-in transduction to help overcome the influence of parasitics on sensitivity.
In this regard, 3 non-conventional architectures are explored which fall under the direct integration classification namely:
(a) Sub-threshold based sensing
(b) Fringe field based sensing and
(c) Tunneling current based sensing.
a) In Sub-threshold based sensing, FET with a suspended gate is used for displacement sensing. The FET is biased in the sub-threshold region of operation. The exponential modulation of drain current for a change in displacement of 1 nm is evaluated using TCAD, and the in uence of initial air-gap variation on the sensitivity factor ( ID=ID) is brought out.
For 1% change in air gap displacement (i.e., TGap/TGap, the gap variation resulting due to the inertial force / mass loading) nearly 1050% change in drain current( ID=ID) is observed (considering initial air gaps of the order 100 nm). This validates the high sensitivity offered by the device in this regime of operation. A comparison of sensitivity estimate using the capacitive equivalence model and TCAD simulated model for different initial air-gaps in a FD-SOI FET is brought out. The influence of FDSOI FET device parameters on sensitivity, namely the variation of TSi, TBox, NA and TGap are explored.
CMOS compatibility and fabrication feasibility of this architecture was looked into by resorting to the post processing approach used for validating the sub-threshold bias concept. The IMD layers of the Bulk FETs fabricated through AMS 0.35 technology were etched using BHF and IPA mixture to result in a free standing metal (Al) layers acting as the suspended gate. The performance estimate is carried out considering specific Equivalent Gap Thickness (EGT) of 573 nm and 235 nm, to help overcome the role of coupled electrostatics in influencing the sensitivity metric. The sensitivity observed by biasing this post processed bulk FET in sub-threshold is 114% ( ID=ID change) for a 59% ( d/d change). The equivalent C in this case is 370 aF.
b) In Fringe eld based sensing approach, a JunctionLess FET (JLFET) is used as a depletion mode device and an out-of-plane gate displacement would help modulate the device pinch-o voltage due to fringe field coupling. The resulting change in the gate fringe field due to this displacement modulates the drain current of the JunctionLess FET. The displacement induced fringe field change (relative to the FET channel) brings about a distinct shift in the ID-VG characteristics of the JLFET. For displacement
d = 2 nm, the JLFET with a channel doping of ND = 8X1018cm 3 and a bias point of VG = -47.7 V, 98% enhancement in sensitivity is observed in 3D TCAD simulations. The equivalent C in this case is 29 zF. The role of ground-planes in the device operation is explored.
c) In the tunneling current based sensing approach, the beams fabricated using the SOI-MUMPS process are FIB milled so as to create very ne air gaps of the order of nearly 85 nm. Under high electric fields of the order > 8 MV/cm, the lateral displacement based tunneling sensor offers enhanced change in sensitivity for an induced external force at a fixed DC bias. When integrated as an array with varying electrode overlap, this technique can track displacements over a wide range. With the initial beam overlap as 1.2 m, for a lateral displacement of 1.2 m, a 100% change in sensitivity ( ID=ID) is observed. The effect of fringe field can be completely neglected here unlike its capacitive beam equivalent.
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Shapeable microelectronicsKarnaushenko, Daniil 04 July 2016 (has links) (PDF)
This thesis addresses the development of materials, technologies and circuits applied for the fabrication of a new class of microelectronic devices that are relying on a three-dimensional shape variation namely shapeable microelectronics. Shapeable microelectronics has a far-reachable future in foreseeable applications that are dealing with arbitrarily shaped geometries, revolutionizing the field of neuronal implants and interfaces, mechanical prosthetics and regenerative medicine in general. Shapeable microelectronics can deterministically interface and stimulate delicate biological tissue mechanically or electrically. Applied in flexible and printable devices shapeable microelectronics can provide novel functionalities with unmatched mechanical and electrical performance. For the purpose of shapeable microelectronics, novel materials based on metallic multilayers, photopatternable organic and metal-organic polymers were synthesized.
Achieved polymeric platform, being mechanically adaptable, provides possibility of a gentle automatic attachment and subsequent release of active micro-scale devices. Equipped with integrated electronic the platform provides an interface to the neural tissue, confining neural fibers and, if necessary, guiding the regeneration of the tissue with a minimal impact. The self-assembly capability of the platform enables the high yield manufacture of three-dimensionally shaped devices that are relying on geometry/stress dependent physical effects that are evolving in magnetic materials including magentostriction and shape anisotropy. Developed arrays of giant magnetoimpedance sensors and cuff implants provide a possibility to address physiological processes locally or distantly via magnetic and electric fields that are generated deep inside the organism, providing unique real time health monitoring capabilities. Fabricated on a large scale shapeable magnetosensory systems and nanostructured materials demonstrate outstanding mechanical and electrical performance. The novel, shapeable form of electronics can revolutionize the field of mechanical prosthetics, wearable devices, medical aids and commercial devices by adding novel sensory functionalities, increasing their capabilities, reducing size and power consumption.
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Shapeable microelectronicsKarnaushenko, Daniil 08 June 2016 (has links)
This thesis addresses the development of materials, technologies and circuits applied for the fabrication of a new class of microelectronic devices that are relying on a three-dimensional shape variation namely shapeable microelectronics. Shapeable microelectronics has a far-reachable future in foreseeable applications that are dealing with arbitrarily shaped geometries, revolutionizing the field of neuronal implants and interfaces, mechanical prosthetics and regenerative medicine in general. Shapeable microelectronics can deterministically interface and stimulate delicate biological tissue mechanically or electrically. Applied in flexible and printable devices shapeable microelectronics can provide novel functionalities with unmatched mechanical and electrical performance. For the purpose of shapeable microelectronics, novel materials based on metallic multilayers, photopatternable organic and metal-organic polymers were synthesized.
Achieved polymeric platform, being mechanically adaptable, provides possibility of a gentle automatic attachment and subsequent release of active micro-scale devices. Equipped with integrated electronic the platform provides an interface to the neural tissue, confining neural fibers and, if necessary, guiding the regeneration of the tissue with a minimal impact. The self-assembly capability of the platform enables the high yield manufacture of three-dimensionally shaped devices that are relying on geometry/stress dependent physical effects that are evolving in magnetic materials including magentostriction and shape anisotropy. Developed arrays of giant magnetoimpedance sensors and cuff implants provide a possibility to address physiological processes locally or distantly via magnetic and electric fields that are generated deep inside the organism, providing unique real time health monitoring capabilities. Fabricated on a large scale shapeable magnetosensory systems and nanostructured materials demonstrate outstanding mechanical and electrical performance. The novel, shapeable form of electronics can revolutionize the field of mechanical prosthetics, wearable devices, medical aids and commercial devices by adding novel sensory functionalities, increasing their capabilities, reducing size and power consumption.
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