Silicon nanowire based multiple gate metal oxide field effect transistors(MG-MOSFET) appear as replacements for conventional bulk transistors in post 45nm technology nodes. In such transistors the short channel effect(SCE) is controlled by the device geometry, and hence an undoped (or, lightly doped) ultra-thin body silicon nanowire is used to sustain the channel. The use of undoped body also solves several issues in bulk MOSFETs e.g., random dopant fluctuations, mobility degradation and compatibility with midgap metal gates. The electrostatic integrity of such devices increases with the scaling down of the body thickness. Since the quantization of electron energy cannot be ignored in such ultra-thin body devices, it is extremely important to consider quantum effects in their threshold voltage models. Most of the models reported so far are valid for long channel double gate devices. Only Munteanu et al. [Journal of non-crystalline solids vol 351 pp 1911-1918 2005] have reported threshold voltage model for short channel symmetric double gate MOSFET, however it involves unphysical fitting parameters. Only Munteanu et al.[Molecular simulation vol 31 pp 839-845 2005] reported threshold voltage model for quad gate transistor which is implicit in nature. On the other hand no modeling work has been reported for other types of MG-MOSFETs (e.g., tri gate, cylindrical body)apart from numerical simulation results. In this work we report physically based closed form quantum threshold voltage models for short channel symmetric double gate, quad gate and cylindrical body gate-all-around MOSFETs. In these devices quantum effects aries mainly due to the structural confinement of electron energy. Proposed models are based on the analytical solution of two or three-dimensional Poisson equation and one or two-dimensional Schrodinger equation depending on the device geometries. Judicial approximations have been taken to simplify the models in order to make them closed form and efficient for large scale circuit simulation. Effort has also been put to model the quantum threshold voltage of tri gate MOSFET. However it is found that the energy quantization in tri gate devices are mainly due to electronic confinement and hence it is very difficult to develop closed form analytical equations for the threshold voltage. Thus in this work the modeling of tri gate devices have been limited to long channel cases. All the models are validated against the professional numerical simulator.

Floating-gate transistors similar to those used in FLASH and EEPROM can be used to build reconfigurable analog arrays. The charge on the floating gate can be modified to pass or block a signal in a cross-bar switch matrix, or it can be finely tuned to eliminate a threshold difference across a chip or set a bias. By using such a compact and versatile reconfigurable analog memory element, the number of analog circuit components included on an integrated circuit that is field-programmable is significantly higher. As a result, large-scale FPAAs can be built with the same impact on analog design that FPGAs have had on digital design. In my research, I investigate the areas floating-gate transistors can be used to impact FPAA design and implementation. An FPAA can be broken up into two basic components, elements of connection and elements of computation. With respect to connection, I show that a floating-gate switch can be used in a cross-bar matrix in place of a transmission gate resulting in less parasitic capacitance and a more linear resistance for the same size transistor. I illuminate the programming issues relating to injecting a floating-gate for use as a switch, including the drain selection circuitry and rogue injection due to gate induced drain leakage. With respect to computation, I explain how a Multiple-Input Translinear Element, or MITE, can be augmented to fit in an FPAA framework. I also discuss two different MITE implementations compatible with CMOS technology, a subthreshold MOS design and a BJT MITE that uses a lateral BJT. Beyond FPAA components, I present two alternative FPAA systems. The first is a general purpose reconfigurable analog system that uses standard analog design components that have been augmented with floating-gates. The second FPAA is built upon MITE circuits, and is focused on supporting direct system synthesis. I conclude with a discussion of a future large-scale MITE FPAA.

The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. This thesisinvestigates both unconventional materials for the gate stackand the channel and a novel notched-gate device architecture,with the emphasis on the challenging issues in processintegration. High-κ gate dielectrics will become indispensable forCMOS technology beyond the 65-nm technology node in order toachieve a small equivalent oxide thickness (EOT) whilemaintaining a low gate leakage current. HfO2and Al2O3as well as their mixtures are investigated assubstitutes for the traditionally used SiO2in our MOS transistors. These high-κ filmsare deposited by means of atomic layer deposition (ALD) for anexcellent control of film composition, thickness, uniformityand conformality. Surface treatments prior to ALD are found tohave a crucial influence on the growth of the high-κdielectrics and the performance of the resultant transistors.Alternative gate materials such as TiN and poly-SiGe are alsostudied. The challenging issues encountered in processintegration of the TiN or poly-SiGe with the high-k are furtherelaborated. Transistors with TiN or poly-SiGe/high-k gate stackare successfully fabricated and characterized. Furthermore,proof-of-concept strained-SiGe surface-channel pMOSFETs withALD high-κ dielectrics are demonstrated. The pMOSFETs witha strained SiGe channel exhibit a higher hole mobility than theuniversal hole mobility in Si. A new procedure for extractionof carrier mobility in the presence of a high density ofinterface states found in MOSFETs with high-κ dielectricsis developed. A notched-gate architecture aiming at reducing the parasiticcapacitance of a MOSFET is studied. The notched gate is usuallyreferred to as a local thickness increase of the gatedielectric at the feet of the gate above the source/drainextensions. Two-dimensional simulations are carried out toinvestigate the influence of the notched gate on the static anddynamic characteristics of MOSFETs. MOSFETs with optimizednotch profile exhibit a substantial enhancement in the dynamiccharacteristics with a negligible effect on the staticcharacteristics. Notched-gate MOSFETs are also experimentallyimplemented with the integration of a high-κ gatedielectric and a poly-SiGe/TiN bi-layer gate electrode. Key words:CMOS technology, MOSFET, high-κ, gatedielectric, ALD, surface pre-treatment, metal gate, poly-SiGe,strained SiGe, surface-channel, buried-channel, notchedgate.

Field-programmable analog arrays (FPAAs) provide a method for rapidly prototyping analog systems. Currently available commercial and academic FPAAs are typically based on operational amplifiers (or other similar analog primitives) with only a few computational elements per chip. While their specific architectures vary, their small sizes and often restrictive interconnect designs leave current FPAAs limited in functionality, flexibility, and usefulness. Recent advances in the area of floating-gate transistors have led to an analog technology that is very small, accurately programmable, and extremely low in power consumption. By leveraging the advantages of floating-gate devices, a large-scale FPAA is designed that dramatically advances the current state of the art in terms of size, functionality, and flexibility. A large-scale FPAA is used as part of a mixed-signal prototyping platform to demonstrate the viability and benefits of cooperative analog/digital signal processing. This work serves as a roadmap for future FPAA research. While current FPAAs can be compared with the small, relatively limited, digital, programmable logic devices (PLDs) of the 1970s and 1980s, the floating-gate FPAAs introduced here are the first step in enabling FPAAs to support large-scale, full-system prototyping of analog designs similar to modern FPGAs.

A complete all-optical-processing polarization-based binary-logic system, by which any logic gate or processor could be implemented, was proposed. Following the new polarization-based representation, a new Orthoparallel processing technique that allows for the creation of all-optical-processing gates that produce a unique output once in a truth table, was developed. This representation allows for the implementation of all basic 16 logic gates, including the NAND and NOR gates that can be used independently to represent any Boolean expression or function. In addition, the concept of a generalized gate is presented, which opens the door for reconfigurable optical processors and programmable optical logic gates. The gates can be cascaded, where the information is always on the laser beam. The polarization of the beam, and not its intensity, carries the information. The new methodology allows for the creation of multiple-input-multiple-output processors that implement, by itself, any Boolean function, such as specialized or non-specialized microprocessors. The Rail Road (RR) architecture for polarization optical processors (POP) is presented. All the control inputs are applied simultaneously, leading to a single time lag, which leads to a very-fast and glitch-immune POP. A simple and easy-to-follow step-by-step design algorithm is provided for the POP, and design reduction methodologies are discussed. The algorithm lends itself systematically to software programming and computer-assisted design. A completely passive optical switch was also proposed. The switch is used to design completely passive optical gates, including the NAND gate, with their operational speeds only bound by the input beams prorogation delay. The design is used to demonstrate various circuits including the RS latch. Experimental data is reported for the NAND and the Universal gate operating with different functionality. A minute error is recorded in different cases, which can be easily eliminated by a more dedicated manufacturing process. Finally, some field applications are discussed and a comparison between all proposed systems and the current semiconductor devices is conducted based on multiple factors, including, speed, lag, and heat generation.

<p>The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. This thesisinvestigates both unconventional materials for the gate stackand the channel and a novel notched-gate device architecture,with the emphasis on the challenging issues in processintegration.</p><p>High-κ gate dielectrics will become indispensable forCMOS technology beyond the 65-nm technology node in order toachieve a small equivalent oxide thickness (EOT) whilemaintaining a low gate leakage current. HfO₂and Al₂O₃as well as their mixtures are investigated assubstitutes for the traditionally used SiO₂in our MOS transistors. These high-κ filmsare deposited by means of atomic layer deposition (ALD) for anexcellent control of film composition, thickness, uniformityand conformality. Surface treatments prior to ALD are found tohave a crucial influence on the growth of the high-κdielectrics and the performance of the resultant transistors.Alternative gate materials such as TiN and poly-SiGe are alsostudied. The challenging issues encountered in processintegration of the TiN or poly-SiGe with the high-k are furtherelaborated. Transistors with TiN or poly-SiGe/high-k gate stackare successfully fabricated and characterized. Furthermore,proof-of-concept strained-SiGe surface-channel pMOSFETs withALD high-κ dielectrics are demonstrated. The pMOSFETs witha strained SiGe channel exhibit a higher hole mobility than theuniversal hole mobility in Si. A new procedure for extractionof carrier mobility in the presence of a high density ofinterface states found in MOSFETs with high-κ dielectricsis developed.</p><p>A notched-gate architecture aiming at reducing the parasiticcapacitance of a MOSFET is studied. The notched gate is usuallyreferred to as a local thickness increase of the gatedielectric at the feet of the gate above the source/drainextensions. Two-dimensional simulations are carried out toinvestigate the influence of the notched gate on the static anddynamic characteristics of MOSFETs. MOSFETs with optimizednotch profile exhibit a substantial enhancement in the dynamiccharacteristics with a negligible effect on the staticcharacteristics. Notched-gate MOSFETs are also experimentallyimplemented with the integration of a high-κ gatedielectric and a poly-SiGe/TiN bi-layer gate electrode.</p><p><b>Key words:</b>CMOS technology, MOSFET, high-κ, gatedielectric, ALD, surface pre-treatment, metal gate, poly-SiGe,strained SiGe, surface-channel, buried-channel, notchedgate.</p>

The Cooperative Analog/Digital Signal Processing (CADSP) research group's approach to signal processing is to see what opportunities lie in adjusting the line between what is traditionally computed in digital and what can be done in analog. By allowing more computation to be done in analog, we can take advantage of its low power, continuous domain operation, and parallel capabilities. One setback keeping Analog Signal Processing (ASP) from achieving more wide-spread use, however, is its lack of programmability. The design cycle for a typical analog system often involves several iterations of the fabrication step, which is labor intensive, time consuming, and expensive. These costs in both time and money reduce the likelihood that engineers will consider an analog solution. With CADSP's development of a reconfigurable analog platform, a Field-Programmable Analog Array (FPAA), it has become much more practical for systems to incorporate processing in the analog domain. In this Thesis, I present an entire chain of tools that allow one to design simply at the system block level and then compile that design onto analog hardware. This tool chain uses the Simulink design environment and a custom library of blocks to create analog systems. I also present several of these ASP blocks, covering a broad range of functions from matrix computation to interfacing. In addition to these tools and blocks, the most recent FPAA architectures are discussed. These include the latest RASP general-purpose FPAAs as well as an adapted version geared toward high-speed applications.

Le projet de thèse s'inscrit dans le consortium industriel académique MEGAN (More Electric Gallium Nitride) réunissant de nombreux industriels français, grands groupes et PME (Renault, Schneider Electric, Safran, IDMOS, Valeo...) et académiques (G2Elab, Ampère, SATIE...) et le CEA. Le projet consiste à introduire de nouvelles technologies de composants de puissance à base de matériaux en GaN afin d'augmenter les performances des convertisseurs statiques pour divers types d'applications. La thèse est intégralement focalisée sur la partie Driver intégré de composants GaN à base d'une technologie CMOS SOI XFAB XT018 pour favoriser l'utilisation des systèmes à haute fréquence et haute température. La thèse consiste à étudier des architectures des drivers et des fonctionnalités innovantes permettant de limiter les problèmes inhérents à la haute fréquence et la haute température (Compatibilité ÉlectroMagnétique- CEM, pertes de commande par courant de fuites, limites fonctionnelles...). Suite à l'étude des architectures à l'échelle du bras d'onduleur à base de composants discrets, un circuit intégré est conçu en collaboration avec les partenaires du projet. Le circuit intégré est alors réalisé avant d'être caractérisé puis mis en œuvre dans des démonstrateurs dans le cadre du projet. En particulier, des caractéristiques de réponses en fréquence et de tenue en température seront proposées. La mise en œuvre est conduite au sein même du module de puissance intégrant les composants de puissance en GaN, au plus près de ceux-ci pour favoriser les fonctionnements à haute fréquence. Le démonstrateur final peut servir plusieurs types d'applications de part sa versatilité. Le travail de thèse est alors plus spécifiquement orienté sur l'étude du comportement haute fréquence du driver et de l'ensemble interrupteurs avec fortes vitesses de commutation / drivers d’un bras d'onduleur. / This Ph.D work is part of the industrial academic project MEGaN (More Electric Gallium Nitride) involving many French companies (Renault, Schneider Electric, Safran, ID MOS, Valeo, ...), academic institutions (G2Elab, Ampere, SATIE ...) and CEA. MEGaN project aims are to introduce a new technology of the power components based on GaN materials, to increase the performance of the static converters for various applications.This research is highly focused on the integrated driver and other power device peripheral units for GaN-based components. This is done in SOI CMOS XFAB XT018 technology to promote performing in high-frequency and high temperature applications. It involves examining driver's architectures and features, innovative methods to limit problems inherent in high frequency and high temperature (conducted EMI perturbation, delay mismatch, functional limitations ...). After studying the architecture at the scale of the discrete circuits, the integrated circuits are designed in collaboration with the project partners. The integrated circuit is manufactured by foundry XFAB before being characterized and implemented.In particular, the characteristics at high frequency response and high temperature compliance are proposed. The final implementation is conducted in the hybrid power module power with the power components GaN, as close as possible to those for operation at high frequency which is presented in the end of this thesis. The final demonstrator serves several kinds of applications because of its versatility. The thesis is specifically focused on the study of high frequency behavior of the driver and power switches with high switching speed / the driver’s components of an inverter leg.

No description available.

China is undergoing a rapid increase in their development of hydropower.Due to this rapid increase, China has become one of theleading countries in technological solutions regarding the constructionof the hydropower plant. The hydro resources in China are extensivebut building a new power plant is laborious and costly. Upgrading anexisting power plant is therefore of interest. Increasing the volume flowis one way, but this can bring problems to the hydraulic structures.The design of hydraulic gates is crucial for operating a hydropowerplant safely. An emergency gate is especially important as it protectsthe turbine situated downstream of the gate. In this study, a numericalsimulation of the shutdown process of a hydraulic vertical lift gatewas conducted. The simulation was done in two dimensions using theReynolds Navier Stokes Equations (RANS), together with the RNGk ≠ ‘ turbulence model and the Volume of Fluid method (VOF). Thegoal was to extract the pressure distribution around the gate, subsequently,attaining the hydrodynamic forces and also to observe andanalyze the flow surrounding the gate. The simulation was comparedwith existing experimental data, from a 1/18 scale model, for validation.Once the model was validated, eight different cases were tested toimprove the operating conditions. The closing speed of the gate andthe gate bottom angle was altered in order to reduce the down-pullforce and undesirable flow phenomena. It was found that lowering thegate speed to 8.1 m/min would have positive effect. As the gate closesrelatively fast with reduced forces compared to a faster speed, and withless induced vibrations than with a slower speed. Changing the gatebottom angle from 9¶ to 30¶, would also have a considerable positiveinfluence of the lowered gate vibrations. However changing the bottomangle needs to be more thoroughly studied concerning structuraleffects.