abstract: In this work, the insight provided by our sophisticated Full Band Monte Carlo simulator is used to analyze the behavior of state-of-art devices like GaN High Electron Mobility Transistors and Hot Electron Transistors. Chapter 1 is dedicated to the description of the simulation tool used to obtain the results shown in this work. Moreover, a separate section is dedicated the set up of a procedure to validate to the tunneling algorithm recently implemented in the simulator. Chapter 2 introduces High Electron Mobility Transistors (HEMTs), state-of-art devices characterized by highly non linear transport phenomena that require the use of advanced simulation methods. The techniques for device modeling are described applied to a recent GaN-HEMT, and they are validated with experimental measurements. The main techniques characterization techniques are also described, including the original contribution provided by this work. Chapter 3 focuses on a popular technique to enhance HEMTs performance: the down-scaling of the device dimensions. In particular, this chapter is dedicated to lateral scaling and the calculation of a limiting cutoff frequency for a device of vanishing length. Finally, Chapter 4 and Chapter 5 describe the modeling of Hot Electron Transistors (HETs). The simulation approach is validated by matching the current characteristics with the experimental one before variations of the layouts are proposed to increase the current gain to values suitable for amplification. The frequency response of these layouts is calculated, and modeled by a small signal circuit. For this purpose, a method to directly calculate the capacitance is developed which provides a graphical picture of the capacitative phenomena that limit the frequency response in devices. In Chapter 5 the properties of the hot electrons are investigated for different injection energies, which are obtained by changing the layout of the emitter barrier. Moreover, the large signal characterization of the HET is shown for different layouts, where the collector barrier was scaled. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2016

Submitted by Etelvina Domingos (etelvina.domingos@ufpe.br) on 2015-03-03T19:50:33Z No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: 66e71c371cc565284e70f40736c94386 (MD5) Tese Thatiana Stamford-Arnaud.pdf: 4238948 bytes, checksum: cc5572bb63cc1af251398ed4dd44cdd8 (MD5) / Made available in DSpace on 2015-03-03T19:50:33Z (GMT). No. of bitstreams: 2 license_rdf: 1232 bytes, checksum: 66e71c371cc565284e70f40736c94386 (MD5) Tese Thatiana Stamford-Arnaud.pdf: 4238948 bytes, checksum: cc5572bb63cc1af251398ed4dd44cdd8 (MD5) Previous issue date: 2012-09 / CNPq / O desenvolvimento de novos materiais baseados no uso da quitosana, a serem empregados em aplicações tecnológicas e biomédicas, é um campo de pesquisa que tem despertado grande interesse. Partículas nanométricas de quitosana têm sido utilizadas com eficiência como carreadores de fármacos, e recentemente, estão sendo estudadas como funcionalizantes de marcadores tumorais. Alguns trabalhos relatam a incorporação de compostos fluorescentes, tais como o FITC (Isotiocianato de Fluoresceína) em nanopartículas de quitosana para a marcação de cultura de células neoplásicas. No entanto, os fluoróforos orgânicos apresentam elevada fotoinstabilidade, além de alto grau de toxicidade em relação a sistemas biológicos. Portanto, o presente trabalho propõe a síntese de quantum dots de semicondutores e sua funcionalização com nanopartículas de cloridrato de quitosana (NCQ) obtidas através do método de gelificação iônica com o tripolifosfato de pentasódio (TPP). Para saber qual a NCQ ideal para esta funcionalização foi feito um estudo preliminar variando o grau de desacetilação e despolimerização a fim de obter nanopartículas com propriedades específicas para a aplicabilidade sugerida no presente trabalho. As técnicas utilizadas para obter a caracterização estrutural, grau de desacetilação e despolimerização das quitosanas foram respectivamente: espectroscopia vibracional na região do infravermelho, análise elementar / ressonância magnética nuclear e medidas de viscosidade. A caracterização morfológica das nanopartículas de quitosana e a determinação do tamanho médio das partículas foram realizadas através da microscopia eletrônica de transmissão (MET) e por medidas de espalhamento dinâmico de luz (DLS), respectivamente. A estabilidade do nanocompósito foi verificada através de medidas de Potencial Zeta. Foram feitos testes de biocompatibilidade dos nanocompósitos através da membrana corialantóide do ovo e pelo método do MTT. A marcação deste nanocompósito inédito em células neoplásicas pulmonares (linhagem NCI-H292) foi observada pela microscopia de fluorescência. Os resultados obtidos comprovaram que o CdS passivado com Cd(OH) e funcionalizado com NCQ na proporção de 50:1 conseguiu marcar culturas de células de câncer de pulmão. Os testes realizados com as membranas corialantóide do ovo sugeriram que o CdS e o CdS/Cd(OH)2 são irritantes. No entanto, o método de MTT mostrou que o CdS/Cd(OH)2, as NCQ e o NC não apresentam atividade citotóxica.

abstract: The maximum theoretical efficiency of a terrestrial non-concentrated silicon solar cell is 29.4%, as obtained from detailed balance analysis. Over 90% of the current silicon photovoltaics market is based on solar cells with diffused junctions (Al-BSF, PERC, PERL, etc.), which are limited in performance by increased non-radiative recombination in the doped regions. This limitation can be overcome through the use of passivating contacts, which prevent recombination at the absorber interfaces while providing the selectivity to efficiently separate the charge carriers generated in the absorber. This thesis aims at developing an understanding of how the material properties of the contact affect device performance through simulations.The partial specific contact resistance framework developed by Onno et al. aims to link material behavior to device performance specifically at open circuit. In this thesis, the framework is expanded to other operating points of a device, leading to a model for calculating the partial contact resistances at any current flow. The error in calculating these resistances is irrelevant to device performance resulting in an error in calculating fill factor from resistances below 0.1% when the fill factors of the cell are above 70%, i.e., for cells with good passivation and selectivity. Further, silicon heterojunction (SHJ) and tunnel-oxide based solar cells are simulated in 1D finite-difference modeling package AFORS-HET. The effects of material property changes on device performance are investigated using novel contact materials like Al0.8Ga0.2As (hole contact for SHJ) and ITO (electron contact for tunnel-oxide cells). While changing the bandgap and electron affinity of the contact affect the height of the Schottky barrier and hence contact resistivity, increasing the doping of the contact will increase its selectivity. In the case of ITO, the contact needs to have a work function below 4.2 eV to be electron selective, which suggests that other low work function TCOs (like AZO) will be more applicable as alternative dopant-free electron contacts. The AFORS-HET model also shows that buried doped regions arising from boron diffusion in the absorber can damage passivation and decrease the open circuit voltage of the device. / Dissertation/Thesis / Masters Thesis Materials Science and Engineering 2020

Als Prüfung auf das genotoxische Potenzial einer Substanz ist die Entstehung von Micronuclei in proliferierendem Gewebe als genetischer Endpunkt wissenschaftlich und behördlich anerkannt. Zugrunde liegendes Experimentalmodell für diesen Test sind zumeist Mäuse und Ratten, deren Knochenmark das Zielgewebe dieses Tests darstellt. Dieses Testmodell geht mit dem Tod der verwendeten Tiere einher. Die vorliegende Arbeit greift den von Wolf & Lüpke (1997) sowie Wolf (1999) vorgestellten HET-MN (Hen’s Egg Test for MicroNucleus induction) auf, der angebrütete Hühnereier als Experimentalmodell verwendet (Bebrütungsdauer 11 Tage, d11). Zielorgan ist das periphere Blut der extraembryonalen Membranen. Das entnommene Blut wurde nach modifizierten hämatologischen Standard-verfahren angefärbt und die Zellen im Hellfeld-Durchlicht-Mikroskop bei 1000-facher Vergrößerung ausgezählt. Anhand der nucleosidanalogen Reverse Transkriptase Hemmer Zidovudin, Stavudin, Zalcitabin, Lamivudin und Didanosin fand ein Abgleich mit den durch Tierversuche gewonnenen Daten statt. In den versuchsreihen zu Zidovudin, Stavudin Zalcitabin, Didanosin und in den Kombinationsversuchen mit Zidovudin und Didanosin konnten die Daten aus der Literatur reproduzierbar bestätigt werden; wobei der HET-MN sensitiver reagierte als das Testmodell am Tier. Für Lamivudin konnte reproduzierbar eine biologisch und statistisch relevante, dosisabhängige Erhöhung der Micronucleusfrequenz erzielt werden. Damit steht der HET-MN in Kontrast zu den in der Literatur verfügbaren Informationen. Die im HET-MN gewonnenen Daten ließen in allen Versuchsreihen auf vergleichbare oder höhere Sensitivität als im Micronucleustest an Nagern schließen. Damit stellt der HET-MN eine kostengünstige und methodisch leicht durchführbare Alternative zum Tierversuch dar und wird trotz seiner hohen Komplexität und den damit verbundenen in-vivo-ähnlichen Bedingungen allen Belangen des Tierschutzes gerecht.

Diese Arbeit präsentiert eine einfache eine einfache, auf Photolithographie basierende Methode zur Darstellung einer isolierten Graphenkante (oder GrEdge) einer Monolage als Nanoelektrode auf einem isolierenden Substrat vorgestellt. Trotz ihrer Millimeter-Länge verhält sich die nur einen Nanometer breite GrEdge-Elektrode wie ein Nanodraht mit einem hohen Seitenverhältnis von 1000000 zu 1. Des Weiteren wird der Einsatz von elektrochemischer Modifikation (ECM) demonstriert, um die GrEdge selektiv mit Metall-Nanopartikeln und organischen Schichten nicht-kovalente oder kovalente zu funktionalisieren, wodurch die Chemie der Kante verändert werden kann. Durch die Anbringung von Metall-Nanopartikeln kann zusätzlich oberflächenverstärkte Raman-Spektroskopie (SERS) genutzt werden, um die chemische Beschaffenheit sowohl der unberührten als auch der funktionalisierten GrEdge zu charakterisieren. Die GrEdge weist sehr hohe Mass-entransportraten auf, was charakteristisch für Nanoelektroden ist. Dementsprechend wird die voltammetrische Antwort von der Kinetik des heterogenen Elektrontransfers (HET) diktiert. An der GrEdge-Elektrode werden hohe HET-Raten beobachtet: mindestens 14 cm/s für Außensphäre sonde Ferrocenmethanol (FcMeOH) mit einem quasi-Nernst'schen Verhalten und 0,06 cm/s oder höher für innere Sphäre sonde Ferricyanide ([Fe(CN)6]3-) mit einer kinetisch kontrollierten Reaktion. Nach der selektiven Modifikation der Kante mit Goldnanopartikeln erweist sich der HET als reversibel, mit einer massentransportbegrenztes Nernst‘sches Verhalten aufweisen für beide Redoxmoleküle. Darüber hinaus ermöglicht die schnelle HET-Kinetik die Detektion der reduzierten Form von Nicotinamid-Adenin-Dinukleotid (NADH) und Flavin-Adenin-Dinukleotid (FAD) mit niedrigen Ansatzpotentialen und hinunter bis zu niedrigen mikromolaren Konzentrationen. Entsprechend verbessert die vorliegende Arbeit das Verständnis der Kante von Graphen und deren Chemie. / This thesis presents a simple photolithography-based method to realize the isolated monolayer graphene edge (or GrEdge) nanoelectrode on an insulating substrate. The millimeter-long and a nanometer-wide GrEdge is found to behave like a nanowire with a high aspect ratio of 1000000-to-1. Further, the use of electrochemical modification (ECM) is demonstrated to selectively functionalize the GrEdge with metal nanoparticles and organic moieties in a non-covalent/ covalent manner to tune the chemistry of the edge. The attachment of metal nanoparticles was used to exploit surface-enhanced Raman scattering (SERS) to characterize the chemistry of both the pristine and the functionalized GrEdge. The GrEdge electrodes were found to exhibit very high mass transport rates, characteristic of nanoelectrodes. Accordingly, the voltammetric response is found to be dictated by the kinetics of heterogeneous electron transfer (HET), attributed to the nanoscale geometry and a unique diffusional profile at such electrodes. At the GrEdge electrode, high HET rates are observed: at least 14 cm/s for outer-sphere probe, ferrocenemethanol (FcMeOH) with a quasi-Nernstian behavior; and 0.06 cm/s or higher for inner-sphere probe, ferricyanide ([Fe(CN)6]3-) with a kinetically controlled response. Upon selective modification of the edge with gold nanoparticles, the HET is found to be reversible, with a mass-transport-limited Nernstian response for both probes. Furthermore, the fast HET kinetics enables the sensing of the reduced form of nicotinamide adenine dinucleotide (NADH) and flavin adenine dinucleotide (FAD) with low onset potentials and down to low micromolar concentrations. Hence, this thesis improves the understanding of the edges of graphene and their chemistry. It also realizes isolated GrEdge as a new class of nanoelectrode which forms an important basis within the fields of fundamental electrochemistry and analytical sciences.

L’interface entre le silicium amorphe (a-Si:H) et le silicium cristallin (c-Si) est un constituent clés de cellules solaires à haut rendement reposant sur des procédés à basse température. Trois propriétés de l’interface déterminent le rendement des cellules solaires à hétérojonction de silicium: les décalages de bandes entre a-Si:H et c-Si, les défauts d’interface et la courbure de bande dans c-Si. Ces trois aspects sont traités dans ces travaux de thèse.Dans un premier un temps, un calcul analytique de la courbure de bande dans c-Si est développé. Il repose sur l’approximation d’une densité d’état (DE) constante dans la bande interdite de a-Si:H. L’influence des principaux paramètres de la structure sur la courbure de bande est étudiée : décalage de bande, densité d’état dans a-Si:H, défaut d’interface, etc. La présence d’un effet de confinement quantique est discutée. Grâce à une comparaison entre ces calculs et des mesures de conductance planaire en fonction de la température sur des structures (p)a-Si:H/(n)c-Si et (n)a-Si:H/(p)c-Si, les décalages de bande de valence et de conduction ont pu être estimés à 0.36 eV et 0.15 eV respectivement. En outre, il est montré que le décalage de la bande de valence est indépendant de la température, alors que le décalage de la bande de conduction suit les évolutions des bandes interdites de c-Si et a-Si:H. Ces mesures tendent à prouver que le ‘branch point’ dans a-Si:H est indépendant du dopage.Ensuite, les calculs analytiques sont approfondis pour prendre en compte différents aspects de la structure complète incorporée dans les cellules : contact avec un oxyde transparent conducteur, présence d’une couche de a-Si:H non-dopée à l’interface. A l’aide de simulations numériques et à la lumière de mesures de conductance planaire conjuguées à des mesures de la qualité de passivation de l’interface, des pistes pour optimiser les cellules à hétérojonction sont commentées. En particulier, il est montré qu’un optimum doit être trouvé entre une bonne passivation et une courbure de bande suffisante. Ceci peut être accompli par un réglage fin des propriétés de la couche tampon (épaisseur, dopage), du contact (travail de sortie élevé) et de l’émetteur (p)a-Si:H (densité de défauts et épaisseur). En particulier, un émetteur avec une DE importante conduit paradoxalement à de meilleures performances.Enfin, un nouveau type d’interface a été développé. La surface de c-Si a été oxydée volontairement dans de l’eau pure dé-ionisée à 80 °C avant le dépôt de (p)a-Si:H afin d’obtenir une structure (p)a-Si:H/SiO2/(n)c-Si. A l’aide d’un modèle de courant par effet tunnel implémenté dans le logiciel de simulation numérique AFORS-HET, l’effet d’une couche à grande bande interdite (comme c’est le cas pour SiO2) sur les performances de cellules est étudié : le facteur de forme et le courant de court-circuit sont extrêmement réduits. En revanche, une couche de SiO2 n’a que peu d’impact sur les propriétés optiques de la structure. Expérimentalement, les échantillons réalisés montrent une qualité de passivation à mi-chemin entre le cas sans couche tampon et le cas avec (i)a-Si:H : ceci est expliqué par la présence d’une charge fixe négative dans l’oxyde. La courbure de bande dans c-Si est moins affectée par la présence d’une couche d’oxyde que d’une couche de (i)a-Si:H. Les cellules solaires réalisées démontrent que le concept a le potentiel d’aboutir à de hauts rendements : sur des structures non-optimisées, une tension de court-circuit supérieure à 650 mV a été démontrée, alors que l’oxyde ne semble pas limiter le transport de charge. / The interface between amorphous silicon (a-Si:H) and crystalline silicon (c-Si) is the building block of high efficiency solar cells based on low temperature fabrication processes. Three properties of the interface determine the performance of silicon heterojunction solar cells: band offsets between a-Si:H and c-Si, interface defects and band bending in c-Si. These three points are addressed in this thesis.First, an analytical model for the calculation of the band bending in c-Si is developed. It assumes a constant density of states (DOS) in the a-Si:H band gap. The influence of most parameters of the structure on the band bending is studied: band offsets, DOS in a-Si:H, interface defects, etc. The presence of quantum confinement at the interface is discussed. Analytical calculations and temperature dependent planar conductance measurements are compared such that the band offsets on both (p)a-Si:H/(n)c-Si and (n)a-Si:H/(p)c-Si can be estimated: the valence band offset amounts 0.36 eV while the conduction band offset is 0.15 eV. In addition, it is shown that the valence band offset is independent of temperature whereas the conduction band offset follows the evolutions of c-Si and a-Si:H band gaps with temperature. A discussion of these results in the frame of the branch point theory for band line-up leads to the conclusion that the branch point in a-Si:H is independent of the doping.Then, analytical calculations are developed further to take into account the real solar cell structure where the a-Si:H/c-Si structure is in contact with a transparent conductive oxide and an undoped buffer layer is present at the interface. Measurements of the planar conductance and of the interface passivation quality are interpreted in the light of analytical calculations and numerical simulations to open a way towards a method for the optimization of silicon heterojunction solar cells. It is particularly shown that a trade-off has to be found between a good passivation quality and a significant band bending. This can be realized by tuning the buffer layer properties (thickness, doping), the TCO-contact (high work function) and the emitter (defect density and thickness). Interestingly, an emitter with a high DOS leads to better cell performances.Finally, a new type of interface has been developed, that was not applied to heterojunction solar cells so far. The c-Si surface has been oxidized in deionized water at 80 °C before the (p)a-Si:H emitter deposition such that (p)a-Si:H/SiO2/(n)c-Si structures were obtained. A tunneling current model has been developed, implemented in the 1D numerical device simulator AFORS-HET and used to study the effect of a wide band gap interfacial layer (as it is the case for SiO2) on cell performance: the fill-factor and the short-circuit current are dramatically reduced for thick and high barriers. However, a SiO2 layer has only little impact on optical properties. Fabricated samples show a passivation quality halfway between samples with no buffer layer and with an (i)a-Si:H buffer layer: this is explained by the presence of a negative fixed charge in the oxide. The band bending in (n)c-Si is higher with an oxide layer than with an (i)a-Si:H buffer layer. Solar cells demonstrate that this new concept has the potential to achieve high power conversion efficiencies: for non-optimized structures, an open-circuit voltage higher than 650 mV has been demonstrated, while the oxide does not seem to create a barrier to charge transport.

De analyse van het individuele literaire werk zal steeds het begin- en eindpunt moeten zijn van de literatuurstudie in welke gedaante dan ook: "Dit neemt echter niet weg dat het begin en einde, het alfa en omega van de literaire bedrijvigheid, het literair kunstwerk als zodanig, de literaire intentie, functie en efficientie de literair, literairesthetisch, te actualiseren en te valoriseren tekst is ... " (Rutten, 1973, p.144). Juist deze vorm van onderzoek lijkt op het ogenblik soms weI eens verloren te raken tussen de veelheid van literaire theorieen die overal opgang maken. De beoefenaars van de literaire kritiek lijken dikwijls meer begaan met het opbouwen en afbreken van theorieen dan met het literaire werk zelf. Sinds W. Bloks studie Verhaal en lezer in 1960 voor het eerst het licht zag, mag er dan op het gebied van de literatuurwetenschap in de Nederlanden en daarbuiten heel wat veranderd zijn, maar zijn uitspraak: " ... dat de romantheorie op het ogenblik het meest gebaat is met analyses van afzonderlijke werken" (1969, p.9) heeft zeker nog niets aan geldigheid ingeboet.

A large structural weldment has been designed to serve as the new star tracker bridge for the Dark Energy Experiment upgrade to the Hobby-Eberly Telescope at McDonald Observatory. The modeling approach, analysis techniques and design details will be of interest to designers of large structures where stiffness is the primary design driver. The design includes detailed structural analysis using finite element models to maximize natural frequency response and limit deflections and light obscuration. Considerable fabrication challenges are overcome to allow integration of precision hardware required for positioning the corrector optics to a precision of less than 5 microns along the 4-meter travel range. This thesis provides detailed descriptions of the bridge geometry, analysis results and challenging fabrication issues. / text

In the last 30 years, numerical models have been developed to properly analyze Hall eect thrusters (HET),leading to a bridge between analytical prediction/empirical intuition and experiments. For companies in thespace sector, these codes serve to much more than simply simulating the thruster, but it provides a fast, cheapand reliable tool for processes such as validation and verication procedures, as well as for technical developmentof the thruster. During the testing of the thruster, mostly measurements upstream from the thruster exhaustare obtained since the high density plasma inside the channel disturbs any measurement inside the channel. Thisresults in the company knowing about the output of the thruster performance, but having little knowledge aboutthe processes and behavior of the thruster itself. The purpose of this study is to help reduce the uncertainty,using existing software to eectively analyze and understand HETs. Because of the physical nature of theproblem, HET simulations follow a multi-scale approach where the thruster is divided into two regions: insidechannel/near-plume region and far-plume region. To study each zone dierent softwares are typically used.This thesis aims to nd a common ground between both software, coupling them and creating a line of analysisto follow when studying HETs.The present thesis will focus on the analysis of the famous SPT-100. The design of this work can be divided intotwo: an hybrid-PIC simulation with a software focusing on the inside channel and near-plume region, Hallis; andanother hybrid-PIC simulation regarding the plasma plume expansion performed with SPIS-EP. During thisproject both software were mastered. Hallis is investigated, emphasizing the empirical modelling of the electronanomalous transport inside the thruster and its consequences on the output results. A sensitivity analysis isperformed to obtain a good set of the empirical parameters that drive the overall performance of the thrusterand the plasma behavior. Once a good match persist between Hallis and nominal operating conditions, theoutput is used to construct the input injection distributions needed by the plasma expansion software (SPIS).Finally, the plasma plume is simulated and results are compared to in-house experimental data. In this way,one is able to control and understand the nal output directly from the behavior of the thruster. It is importantto mention that due to condentiality reasons, the testing data cannot be fully shown and sometimes only thetrend can be analyzed.As a results of the analysis, it is found that establishing the coupling between softwares is feasible, but Halliscode needs to include some characteristics to fully take advantage of its potential. It is determined that theion denition followed by Hallis is enough to perfectly dene the ion energy distribution as well as generalperformance parameters of the SPT-100 (thrust, ionization eciency, power...), but the poor electron modelgenerates some deviation in the results. SPIS simulations and comparison with testing data suggest that Hallisoutput is not enough to properly match the experimental measurements, especially regarding the ion angledistribution function. According to Hallis, such distribution is too narrow compared to the observed plasmaplume. This problem is found to be caused by the small simulation domain of Hallis. Hence, although couplingof the software is easy, more functionalities of Hallis would allow for a better study and more accurate results.

Thesis (MA (Afrikaans and Dutch))—University of Stellenbosch, 2007. / In this thesis I examine the Gothic elements in François Bloemof’s debut novel, Die nag het net een oog (1991). There are two reasons this novel can be seen as an exemplary text in Afrikaans: firstly, it contributes to a genre of which there are very few examples in Afrikaans, namely the Gothic novel. Secondly, it leads to a reevaluation of texts of C.J. Langenhoven, C. Louis Leipoldt and Marius Gie (pseudonym of Martha C Gieseke). Apart from a discussion of the Gothic novel in general and specifically Bloemhof’s novel, this thesis also examines his large oeuvre, constant focus on renewal and his position in the Afrikaans literary system. The Gothic novel is generally regarded as a form of popular literature. This aspect, together with the history, function, development and characteristics of the Gothic novel, is also looked at in the thesis in an attempt to contribute to the minimal theoretization on this subject in Afrikaans. Lastly I will discuss the Gothic elements in Bloemhof’ s debut novel. Die nag het net een oog has many of the characteristics of the earlier Gothic novels, but Bloemhof renews them by crossing over conventional boundaries. The heroine being the rescuer instead of the rescuee, is one such example. The study is concluded with short summarizing comments and suggestions for further study.