Transition-metal oxides (TMOs) display numerous fascinating and complex properties, such as mixed-valency, low dimensionality, lattice distortion, and phase transition, etc. These properties arise from the partially filled d- or f-electron shells of TM cations and are often accompanied by the intriguing interplay between degrees of freedom. To understand the complexity of d-electron TMOs, this thesis is primarily focused on studying their underlying electronic structure using X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES), X-ray photoemission spectroscopy (XPS), and resonant inelastic X-ray scattering (RIXS). The measurements at the O K- and TM L-edges are achieved by taking advantage of high-flux and high-resolution synchrotron radiation light with tunable monochromatic photon energy. Four electronically and structurally distinctive oxides are selected as representative TMOs for investigation in this thesis. To begin with, through a comparative study of WO3 and Na0.67WO3 crystals, the narrowing of the conduction band is observed with Na doping and the core-hole energy shift in the O K-edge XAS process is experimentally determined. Indirect and direct band gaps of photoanode WO3 are measured from the resonant XES with polarization-dependent experimental geometry. The other sodium bronze studied is quasi-one-dimensional β-Na0.33V2O5 polycrystalline film. The film stoichiometry, preferential orientation, and orbital anisotropy are well characterized by a variety of photon and electron techniques and compared to density-functional theory (DFT) calculation. The V 3d orbital splitting of β-Na0.33V2O5 is surveyed by the V L-edge RIXS and compared with isoelectronic β-Sr0.17V2O5 regarding distortions to VO6 octahedra. Furthermore, the complex electronic structure of Mott insulators La1-xLuxVO3 is investigated to understand their spin-orbital phase diagram. The effects of rare-earth size on the O 2p hybridization states and the local crystal field of VO6 octahedron are found to agree with the prediction of DFT calculation and the evolution of crystal structure. The changes of experimental spectra with temperature are associated with Jahn-Teller distortion and orbital ordering due to structural phase transition. Lastly, the band structure and low-energy excitations of spinel MnV2O4 are explored using soft x-ray spectroscopies and theoretical calculations. The presence of Hubbard bands and the mixing between V and Mn 3d states are suggested both experimentally and theoretically.

Solid state approaches to structural properties like diffraction or microscopy techniques often cannot be applied to biomolecular systems, at least not without special postpreparation which often corrupts the desired properties of the pristine systems. In this work the capabilities of synchrotron-based, soft X-ray spectroscopies as an alternative way to unravel structural properties of such systems are tested. To this end, three exemplary systems were investigated each with the focus on another facet and characteristic length scale. The first example are DNA-alkanethiol self-assembled monolayers, also known as DNA microarrays or DNA chips, for which a way to monitor and controllably tune the structural composition on the mesoscopic scale of many thousands of molecules was sought for. The second example focuses on the single-molecule and submolecular scale in metalprotein hybrid compounds with the aim to identify the binding site of metal atoms or ions within protein molecules and the underlying interaction mechanisms. The most fundamental structural scale, the level of single bonds and molecular orbitals, is addressed in the last example where it was tried to elaborate an approach to map the topology of molecular orbitals based upon X-ray absorption properties. This approach was put to the practical test for the characteristic pi*peptide orbitals in protein backbones. For all three investigated examples, spectroscopies using soft X-ray synchrotron radiation were able to extract the desired information, thus confirming that they may grant alternative access to structural properties of soft-matter systems in cases where standard approaches fail. / Klassische Festkörpertechniken zur Strukturuntersuchung, wie Streu- oder Mikroskopiemethoden, können häufig nicht auf Biomolekülsysteme angewandt werden, zumindest nicht ohne spezielle Postpräparation, die die ursprünglichen Eigenschaften dieser Systeme oft verfälscht. In dieser Arbeit soll untersucht werden, inwieweit Röntgenspektroskopien basierend auf Synchrotronstrahlung einen alternativen Zugang zu Struktureigenschaften solcher Systeme bieten. Dazu wurden drei Systeme exemplarisch untersucht, jeweils mit Schwerpunkt auf einen anderen Aspekt und charakteristischen Längenbereich. Für selbstorganisierende DNA-Alkanthiol-Schichten, sogenannte DNA-Chips, wurde nach eine Weg gesucht, ihre strukturelle Zusammensetzung auf der mesoskopischen Ebene vieler tausend Moleküle zu bestimmen und kontrolliert zu modifizieren. Metallisierte Proteinstrukturen wurden auf Einzelmolekül- bzw. submolekularer Ebene untersucht, mit dem Ziel, die Orte der Metallanlagerung innerhalb des Proteins und die zugrundeliegenden Wechselwirkungsmechanismen zu identifizieren. Die unterste strukturelle Ebene, der Bereich einzelne Bindungen und Molekülorbitale, wurde adressiert am Beispiel der pi*peptide Orbitale des Proteinrückrats. Dafür wurde eine Methode zur Kartographierung einzelner Orbitale anhand von Röntgenabsorptionseigentschaften herausgearbeitet und praktisch getestet. In allen drei Fällen konnten Röntgenspektroskopien die nötigen Informationen liefern und damit ihr Potential für Strukturuntersuchungen in weicher Materie unter Beweis stellen.

Perovskite-based photovoltaic is one of the most promising classes of emerging solar cell technologies. This material class combines several advantageous properties, including low exciton binding energy, high charge carrier diffusion length and high optical absorption. Despite these excellent attributes, some challenges remain in perovskite research. Most notably the device stabilities and lifetimes need to be significantly improved in order to push this technology towards commercialization. Defect physics in perovskite photovoltaics has been shown to be a main factor in understanding long-term device instabilities. However, the number of measurement techniques that can track changes in the ionic landscape during device degradation is very limited, as the perovskite layer is buried under charge extraction layers and metallic contacts. In this thesis argon gas-cluster ion beam etching is combined with x-ray and ultraviolet photoelectron spectroscopy to achieve high resolution energetic and compositional depth profiles. In contrast to most layer-to-layer techniques this method can be applied after any operation time of the photovoltaic and therefore nicely investigate potential changes in the defect landscape. In the first part of this thesis, the impact of argon gas-cluster etching on the perovskite structure is investigated in order to identify potential damage that prevents this technique from being viable for perovskite materials. It is found that metallic lead is gradually created and a small preferential etching effect of the organic cations takes place during the depth profiling, but it is demonstrated that the major part of the crystal structure stays intact and that the energetics of the sample remains very stable. Moreover, it is demonstrated that fitting of the obtained ultraviolet photoelectron spectroscopy spectra leads to high resolution energetic and compositional depth profiles, which are suitable to identify potential loss mechanisms in full photovoltaic devices. In the second part, we investigate the increase in device performance of a perovskite photovoltaic during the first subsequent measurements under full illumination, which is a common example of a short-term instability. Ultraviolet photoelectron spectroscopy depth profiles reveal a strong band bending effect appearing after biasing the device which consequently leads to an increase in device open-circuit voltage. Density functional theory simulations link this band bending effect to the accumulation of iodine interstitials at the interface between the perovskite and the electron transport layer. In the final part, long-term degradation of perovskite photovoltaics is studied by investigating the impact of ionic additives on the perovskite active layer, which increases the lifetime of these devices significantly. It is found that most properties of the perovskite layer remain unaffected by the ionic additive, e.g. microstructure, energetic disorder and photoluminescence. Photoelectron spectroscopy depth profiling revealed an accumulation of iodine at the interface towards the electron transport layer, which is significantly reduced in additive-containing samples. Deep-level transient spectroscopy revealed a new mobile defect species in the ionic additive samples and at the same time a reduction of iodine diffusivity.

De nombreux oxydes de métaux de transition (TMOs) possèdent des propriétés physiques complexes (ferroélectricité, magnétisme, supraconductivité à haute Tc ou magnétorésistance colossale). Les différents degrés de liberté (le réseau, la charge, le spin ou l'ordre orbitalaire) interagissent pour donner des phases différentes, très proches en énergie, qui vont former une grande variété d'états fondamentaux accessibles. La possibilité de fabriquer des hétérostructures de TMOs a encore accru la complexité de ces systèmes, de nouveaux phénomènes apparaissant aux interfaces. Un exemple typique est le gaz d'électrons bidimensionnel (2DEG) créé à l'interface entre deux oxydes isolants, LaAlO3 et SrTiO3, qui montre une transition métal-isolant, du magnétisme ou de la supraconductivité (contrôlée par une tension de grille). Le point de départ de cette thèse a été la découverte d'un 2DEG similaire à la surface nue de SrTiO3 fracturée sous vide, rendant possible l'étude de sa structure électronique par photoémission angulaire.Dans cette thèse, l'étude de surfaces préparées, plutôt que de petites facettes fracturées, a permis l'obtention de données spectroscopiques possédant des largeurs de raie proches des valeurs intrinsèques. Il est alors possible d'étudier les effets à N corps comme la renormalisation de la self-énergie due à l'interaction électron-phonon.Ces recherches sur la structure électronique du 2DEG à la surface de SrTiO3 ont pris un tour nouveau lorsqu'une texture de spin complexe y a été mesurée par photoémission résolue en spin. Nous présentons des résultats qui contredisent ces conclusions et nous discutons des raisons pouvant expliquer ce désaccord.Une des motivations de cette thèse était de savoir si la structure électronique et les propriétés du 2DEG pouvaient être contrôlées. L'étude du 2DEG sur des surfaces (110) et (111) de SrTiO3 révèle que sa structure de bandes (ordre orbitalaire, symétrie de la surface de Fermi, masses effectives) peut être ajustée en confinant les électrons sur des surfaces de différentes orientations du même matériau.Un succès majeure est la mise en évidence de 2DEGs à la surface de nombreux autres TMOs (TiO2-anatase, CaTiO3, BaTiO3) ou d'oxydes plus simples utilisés dans les applications (ZnO). Dans tous ces oxydes, nous avons identifié les lacunes en oxygène comme étant à l'origine de la création des 2DEGs.Dans l'anatase, ou d'autres TMOs en configuration électronique initiale d0, les lacunes en oxygène produisent à la fois des électrons localisés ou itinérants (le 2DEG). Il peut être subtile de prévoir quel est le cas est le plus favorable énergétiquement comme le démontre l'étude de deux polymorphes de TiO2, anatase et rutile. Dans CaTiO3, l’octaèdre formé par les atomes d'oxygène autour du Ti est incliné. Cette rupture de symétrie provoque un mélange des orbitales d et modifie le 2DEG. Dans BaTiO3, la création d'un 2DEG entraîne la coexistence de deux phénomènes normalement incompatibles, la ferroélectricité et la métallicité, dans deux zones spatialement distinctes du même matériau. Ce travail démontre qu'un 2DEG existe aussi à la surface de ZnO qui est, contrairement aux oxydes à base de Ti, plutôt un semiconducteur conventionnel, le caractère des orbitales pour les électrons itinérants étant alors de type s et non de type d.Le principal résultat est la mise au point d'une méthode simple et versatile pour la création de 2DEGs en évaporant de l'aluminium sur des surfaces d'oxydes. Une réaction d'oxydo-réduction entre le métal et l'oxyde permet de créer un 2DEG à l'interface entre le métal oxydé et l'oxyde réduit. Dans cette thèse, les 2DEGs ont été étudiés uniquement par photoémission sous ultra-vide. Cette méthode ouvre la possibilité d'étudier ces 2DEGs dans des conditions de pression ambiante en utilisant, par exemple, des techniques de transport, un pas important vers la production de masse et à bas coûts de 2DEGs dans les oxydes pour de futures applications. / Many transition metal oxides (TMOs) show complex physics, ranging from ferroelectricity to magnetism, high-Tc superconductivity and colossal magnetoresistance. The existence of a variety of ground states often occurs as different degrees of freedom (e.g. lattice, charge, spin, orbital) interact to form different competing phases which are quite similar in energy. The capability to epitaxially grow heterostructures of TMOs increased the complexity even more as new phenomena can emerge at the interface. One typical example is the two-dimensional electron system (2DES) at the interface of two insulating oxides, namely LaAlO3/SrTiO3, which shows metal-to-insulator transitions, magnetism or gate-tunable superconductivity. The origin of this thesis was the discovery of a similar 2DES at the bare surface of SrTiO3 fractured in vacuum, making it possible to study its electronic structure by angle-resolved photoemission spectroscopy (ARPES).In this thesis, the study of well-prepared surfaces, instead of small fractured facets, results in spectroscopic data showing line widths approaching the intrinsic value. This approach allows a detailed analysis of many-body phenomena like the renormalization of the self-energy due to electron-phonon interaction.Additionally, the understanding of the electronic structure of the 2DES at the surface of SrTiO3(001) was given an additional turn by the surprising discovery of a complex spin texture measured by spin-ARPES. In this thesis data is presented which contradicts these conclusions and discusses possible reasons for the discrepancy.One major motivation of this thesis was the question if and how the electronic structure and the properties of the 2DES can be changed or controlled. In this context, the study of 2DESs at (110) and (111) surface revealed that the electronic band structure of the 2DES (orbital ordering, symmetry of the Fermi surface, effective masses) can be tuned by confining the electrons at different surface orientations of the same material, namely SrTiO3.A major achievement of this thesis is the generalization of the existence of a 2DES in SrTiO3 to many other surfaces and interfaces of TMOs (TiO2 anatase, CaTiO3, BaTiO3) and even simpler oxides already used in modern applications (ZnO). In all these oxides, we identify oxygen vacancies as the origin for the creation of the 2DESs.In anatase and other doped d0 TMOs, both localized and itinerant electrons (2DES) can exist due to oxygen vacancies. Which of the two cases is energetically favorable depends on subtle differences as demonstrated by studying two polymorphs of the same material (anatase and rutile).In CaTiO3, the oxygen octahedron around the Ti ion is slightly tilted. This symmetry breaking results in the mixing of different d-orbitals demonstrating again why and how the electronic structure of the 2DES can be altered.In BaTiO3, the creation of a 2DES results in the coexistence of the two, usually mutual exclusive, phenomena of ferroelectricity and metallicity in the same material by spatially separating the two.Moreover, this work demonstrates that the 2DES also exists in ZnO which is - compared to the Ti-based oxides - rather a conventional semiconductor as the orbital character of the itinerant electrons is of s and not d-type.The main result of this thesis is the demonstration of a simple and versatile technique for the creation of 2DESs by evaporating Al on oxide surfaces. A redox reaction between metal and oxide results in a 2DES at the interface of the oxidized metal and the reduced oxide. In this thesis the study of such interfacial 2DESs was limited to photoemission studies in ultra high vacuum. However, this technique opens up the possibility to study 2DESs in functional oxides in ambient conditions by e.g. transport techniques, and might be an important step towards cost-efficient mass production of 2DESs in oxides for future applications.

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Der zunehmende Bedarf nach digitalen Speichermedien macht die Erforschung von neuen Materialien für zukünftige Technologien von nichtflüchtigen Speichern nötig. Hierfür eignen sich zum Beispiel Metall-Nanopartikel, die in organischen Halbleiterschichten eingebettet sind. Aufgrund der bistabilen Schaltbarkeit der Leitfähigkeit von Metall-Nanopartikeln lassen sie sich in Abhängigkeit der elektrischen Umgebungsbedingungen entweder in einen niedrig- oder einen hochleitenden Zustand schalten. Bisher wurden verschiedene Modelle entwickelt, um den Schaltmechanismus von Speichern mit einem organischen Matrixmaterial zu erklären, jedoch fehlt bislang ein konsistentes Bild zum Verständnis des Schaltvorgangs. Die vorliegende Arbeit  untersucht die Rolle des Raumladungsfeldes ausgehend von Metall-Nanopartikeln in Bauelementen. Dazu wurde eine Reihe von Experimenten zur Bestimmung der elektronischen und elektrischen Eigenschaften durchgeführt, um die tatsächliche Rolle des Raumladungsfeldes aufzuklären. Mit Hilfe von Röntgen- und UV-Photoelektronenspektroskopie wurde die Wechselwirkung zwischen den Metall-Nanopartikeln und den prototypischen organischen Halbleiterschichten detailliert untersucht. Unter Verwendung der bereits untersuchten Materialien wurden Bauelemente hergestellt und charakterisiert. Die Ergebnisse zeigen, dass der allgemein vorgeschlagene Mechanismus bezüglich der Aufladung/Entladung von Metall-Nanopartikeln als Ursache für die elektrische Bistabiliät in einem zweipoligen Bauteil ausgeschlossen werden kann. Stattdessen stützt dieses Ergebnis den alternativen Mechanismus der Filamentbildung. Zur Untersuchung der Skalierbarkeit der Speicher im Nanometerbereich wurden die Strukturen durch das Abscheiden der Materialien bei streifendem Einfall präpariert. Die entsprechenden Nanospeicher wurden elektrisch charakterisiert und zeigten Bistabilität. Folglich sind diese Nanspeicher besonders attraktiv für zukünftige Technologien in Hinblick auf hohe Speicherdichten. / The increasing need to store digital information has triggered research into the exploration of new materials for future non-volatile memory (NVM) technologies. For instance, metal nanoparticles (MNPs) embedded into organic semiconductors are suitable for novel memory applications because they were found to display bistable resistive switching. Different switching models were hitherto developed to explain the fundamental mechanisms at work in resistive NVMs. This thesis explores specifically the role of space-charge field due to the charging of MNPs as rationale for resistive switching in two-terminal devices. A series of experiments on the electronic and electrical properties of devices were conducted in order to reveal whether this mechanism is, indeed, at play in resistance switching. Photoelectron spectroscopy provided detailed information about the interaction between gold nanoparticles (AuNPs) with prototypical organic semiconductors used in optoelectronics. The study of the electronic valence structures provided evidence of a space-charge due to the charging of AuNPs. Furthermore, it is found that charge-neutrality of AuNPs can be dynamically re-established upon illumination, through electron transfer from excitons. Devices were built with the same materials investigated by photoemission spectroscopy and electrical characterization was conducted. Despite the previously demonstrated ability to optically change the charging state of the AuNPs, the devices do not display any bistability. This finding provides evidence that the commonly proposed charging/decharging mechanism of MNPs can be excluded as cause for electrical bistability in NVM devices. In order to explore the scaling of resistive NVMs into the nanometric range, glancing angle deposition technique was employed. The nano-NVMs were electrically characterized and it is proved to manifest resistive bistability. These finding make nano-NVMs highly appealing for future high-density memory technology.

Photochrome Schalter (Photoschalter), wie Diarylethene (DAEs), Dihydropyrole (DHPs), Azobenzole und Spiropyrane sind für die Entwicklung von photoschaltbaren multifunktionalen Geräten interessant. Daher beschäftigt sich ein Großteil dieser Dissertation mit der Untersuchung der grundlegenden elektronischen Eigenschaften von Photoschaltern, u.a. Dipolmoment und Grenzniveaus. Ein besonderer Fokus liegt auf der dynamischen Anpassung der Energienieveaus zwischen den (in)organischen Halbleitern und den Photoschaltern mit externen Stimuli (z. B. Licht, Wärmeenergie). Zuerst werden die elektronischen Änderungen von DAE-Photoschaltern bei Lichtbeleuchtung durch direkt und inverse Photoemissionsspektroskopie und Dichtefunktionaltheorie nachgewiesen. Beispielsweise zeigt das höchste besetzte Molekülorbital (HOMO) von DAE-Dünnfilmen eine Differenz von 800 meV zwischen ihren beiden isomeren Zuständen. Mit diesen lichtgesteuerten Eigenschaften werden dann DAE-Moleküle verwendet, um die elektronische Struktur an Grenzflächen mit organischen und anorganischen Komponenten (z. B. P3HT, N2200, ZnO, ITO) zu modifizieren. Es wird gezeigt, dass DAE-Moleküle bei Lichtbeleuchtung die Energieniveauanordnung an der Grenzfläche um Hunderte von meV dynamisch und reversibel ändern können. Um Erkenntnisse über mehrere stimulationsinduzierte Schaltungen, z. B. Licht und Wärme, zu erhalten, wird hierfür ein Photoschalter Pyridyl-DHP (Py-DHP) vom T-Typ synthetisiert, da Py-DHP mit Licht in eine Richtung geschaltet und mit Wärmebehandlung zurückgeschaltet werden kann. Es hat sich herausgestellt, dass die schaltinduzierten elektronischen Änderungen durch ein Fermi-Level-Pinning aufgrund der Anwesenheit von molekularen Dipolen beeinflusst werden. Diese Studien bieten eine solide Grundlage für die Verwendung von Photoschaltern zur dynamischen Änderung der Energielevelanordnung und werden die Entwicklung verbesserter photoschaltbarer (opto-)elektronischer Geräte unterstützen. / Photochromic switches (photoswitches) such as diarylethenes (DAEs), dihydropyrenes (DHPs), azobenzenes and spiropyrans have attracted increasing interest for the development of photoswitchable multifunctional devices. The present work of this thesis is to investigate the fundamental electronic properties of photoswitches, i.e., dipole moment, and frontier levels. Particular focus is on dynamically tuning the frontier level alignment between the (in)organic semiconductors and photoswitches with external stimuli (e.g., light, heat). First, the electronic changes of DAE photoswitches upon light illumination are evidenced by direct and inverse photoemission spectroscopy together with density functional theory calculations, for example, the highest occupied molecular orbital (HOMO) of DAE thin films exhibits an 800 meV difference between their two isomeric states. With these light-controlled properties, DAE molecules are then employed to modify the electronic structure at interfaces with organic and inorganic components (e.g., P3HT, N2200, ZnO, ITO). It is proved that upon light illumination DAE molecules can indeed dynamically and reversibly switch the interface frontier level alignment by hundreds of meV. To obtain knowledge on multiple stimuli-induced switchings, e.g., light and heat, a T-type photoswitch pyridyl-DHP (Py-DHP) is synthesized for this purpose, since Py-DHP can be switched with light in one direction and switched back with heat treatment. It is found that, the switching-induced electronic changes are impacted by a Fermi level pinning due to the presence of molecular dipoles. These studies provide a solid basis for the use of photoswitches for dynamically manipulating energy level alignment, and will aid the development of improved photoswitchable (opto-)electronic devices.

Thema der vorliegenden Arbeit ist die Untersuchung ausgewählter niederdimensionaler Schichtgittersysteme, wobei das Hauptinteresse in der Erforschung der elektronischen Struktur im Zusammenhang mit Interkalationsexperimenten liegt. Einkristalline Graphit-, TiSe2- und TaSe2-Proben wurden vor und nach der Interkalation mit winkelaufgelöster Photoemission, Fermi- und Isoenergieflächenmessungen und Elektronenbeugung (LEED) analysiert. Als Interkalationsmaterialien wurden U, Eu, Gd und Cs verwendet. Die experimentellen Daten wurden mit Ergebnissen von LDA-LCAO-Bandstrukturrechnungen und Simulationen im Rahmen eines Single-Impurity-Anderson-Modells verglichen. Neben dem Einfluß unterschiedlicher Valenzelektronen der interkalierten Atome auf den Einlagerungsprozeß werden Fragen zum Lokalisierungsverhalten von 4f- und 5f-Zuständen und zu den Veränderungen in der Dimensionalität der Verbindungen durch die Einlagerung diskutiert. Ein weiterer Schwerpunkt dieser Arbeit befaßt sich mit Untersuchungen zur temperaturabhängigen Ausbildung von Ladungsdichtewellen in 1T-TaSe2. / Subject of the present thesis are investigations of selected low-dimensional layered lattice systems, with the principal goal to study the electronic structure in relation to intercalation experiments. Single-crystalline graphite-, TiSe2 - and TaSe2- samples were analyzed by angle-resolved photoemission, Fermi- and isoenergy-surface measurements, and low energy electron diffraction experiments before and after intercalation. U, Eu, Gd, and Cs were used as materials for the intercalation process. The experimental results were compared with theoretical LDA-LCAO band-structure calculations and with simulations in the framework of a single-impurity Anderson model. In addition to the influence of different numbers of valence electrons from intercalated atoms, questions concerning the localization of 4f and 5f states and changes in the dimensionality of the compounds due to the intercalation process are discussed. Investigations of the temperature dependent formation of charge density waves in 1T-TaSe2 complete this work.