<p>III-V nanowire (NW) ensemble devices were fabricated using novel approaches to address key NW optoelectronic issues concerning electrical contacts, doping, surface effects and underlying electrostatics physics.</p> <p>NWs were first embedded in a filling medium, thus achieving low sheet resistance front contacts while preventing shunts. Various filling materials were assessed for porosity, surface roughness and thermal stability, giving Cyclotene as an ideal filing material. Sonication was also introduced as a novel method to achieve perfect planarization.</p> <p>The presence of the Cyclotene also enabled the NWs to be characterized precisely and easily by secondary ion mass spectrometry (SIMS) to give the NW dopant concentration with excellent spatial resolution. Additionally, SIMS characterization demonstrated the ability to characterize the height uniformity of individual segments in a heterostructure NW ensemble.</p> <p>The focus of the work shifted towards surface effects on NW device performance. Therefore, Poisson's equation was solved to provide a comprehensive model of NW surface depletion as a function of interface state density, NW radius and doping density. Underlying physics was examined where surface depletion was found to significantly reduce the conductivity of thin NWs, leading to carrier inversion for some.</p> <p>This model was then applied in conjunction with a transport model to fit current-voltage curves of an AlInP-passivated GaAs NW ensemble device. A 55% decrease in surface state density was achieved upon passivation, corresponding to an impressive four order of magnitude increase in the effective carrier concentration. Additionally, conventional and time-resolved photoluminescence measurements showed intensity and carrier lifetime improvement greater than 20x upon passivation.</p> <p>Finally, the model was extended to describe radial pn junction NWs with surface depletion to give radial energy band profiles for any arbitrary set of NW parameters. Specific cases were analyzed to extract pertinent underlying physics, while the built-in potential was optimized for the design for an optimal device.</p> / Doctor of Philosophy (PhD)

Neste trabalho, estudamos e aplicamos técnicas analíticas com feixes iônicos para a identificação e quantificação do elemento químico Boro em amostras de Boro depositado sobre Níquel 11B/Ni, sobre Silício B/Si e em amostras de Silício Grau Metalúrgico - SiGM. Estas últimas foram fornecidas pelo grupo de metalurgia do Instituto de Pesquisas Tecnológicas (IPT). Especificamente, as seguintes técnicas analíticas foram utilizadas: Nuclear Reaction Analysis - NRA, Elastic Recoil Detection Analysis - ERDA e Secondary Ion Mass Spectrometry - SIMS. Nas amostras de B/Ni e B/Si, as concentrações foram obtidas com medidas de NRA, ERDA e SIMS. Também foi abordado quais dentre essas três técnicas apresentam menor limite de deteção e menor incerteza para a quantificação de Boro. Usando a reação nuclear 11B(p,a0)8Be, foi possível calcular a sua seção de choque diferencial para ângulo de espalhamento theta=170, cujo resultado, para este ângulo específico, é inédito na literatura. As amostras de SiGM foram analisadas com a técnica SIMS e comparadas com medidas de Inductively Coupled Plasma - ICP realizadas pelo grupo do IPT. Uma vez que técnicas nucleares podem ser consideradas absolutas, concluímos que as medidas de ICP apresentaram dados compatíveis com as medidas SIMS, e que o grupo de metalurgia do IPT está medindo as concentrações de Boro em suas amostras de SiGM corretamente por meio de ICP. Uma reta de calibração entre medidas SIMSxICP foi construída, que poderá servir como um guia para futuras quantificações de Boro com ICP feitas pelo grupo de metalurgia do IPT. / In this work we investigated the use of analytical techniques based on ion beams in the quantification of Boron in many kinds of samples. Specifically, we applied techniques such Nuclear Reaction Analysis (NRA), Elastic Recoil Detection Analysis (ERDA) and Secondary Ion Mass Spectrometry (SIMS) to 11B/Ni and B/Si samples to measure the boron concentration. We also discuss and show what technique has a better detection limit and lower uncertainty. For the first time in the literature, we obtained the cross section for the $^{11}B(p,\\alpha_0){^8}Be$ nuclear reaction in the energy range from 1.6 up to 2.0 MeV in theta = 170 scattering angle. The SIMS technique was applied to analise samples of metallurgical grade silicon (SiGM) from Metallurgy Group of Instituto de Pesquisas Tecnologicas (IPT) to check the Inductively Coupled Plasma (ICP) measurements carried out by the IPT. Moreover, it was possible to build a calibration curve between SIMS and ICP measurements, that can be used to help of Metallurgy Group with futures ICP\'s measurements.

Neste trabalho, estudamos e aplicamos técnicas analíticas com feixes iônicos para a identificação e quantificação do elemento químico Boro em amostras de Boro depositado sobre Níquel 11B/Ni, sobre Silício B/Si e em amostras de Silício Grau Metalúrgico - SiGM. Estas últimas foram fornecidas pelo grupo de metalurgia do Instituto de Pesquisas Tecnológicas (IPT). Especificamente, as seguintes técnicas analíticas foram utilizadas: Nuclear Reaction Analysis - NRA, Elastic Recoil Detection Analysis - ERDA e Secondary Ion Mass Spectrometry - SIMS. Nas amostras de B/Ni e B/Si, as concentrações foram obtidas com medidas de NRA, ERDA e SIMS. Também foi abordado quais dentre essas três técnicas apresentam menor limite de deteção e menor incerteza para a quantificação de Boro. Usando a reação nuclear 11B(p,a0)8Be, foi possível calcular a sua seção de choque diferencial para ângulo de espalhamento theta=170, cujo resultado, para este ângulo específico, é inédito na literatura. As amostras de SiGM foram analisadas com a técnica SIMS e comparadas com medidas de Inductively Coupled Plasma - ICP realizadas pelo grupo do IPT. Uma vez que técnicas nucleares podem ser consideradas absolutas, concluímos que as medidas de ICP apresentaram dados compatíveis com as medidas SIMS, e que o grupo de metalurgia do IPT está medindo as concentrações de Boro em suas amostras de SiGM corretamente por meio de ICP. Uma reta de calibração entre medidas SIMSxICP foi construída, que poderá servir como um guia para futuras quantificações de Boro com ICP feitas pelo grupo de metalurgia do IPT. / In this work we investigated the use of analytical techniques based on ion beams in the quantification of Boron in many kinds of samples. Specifically, we applied techniques such Nuclear Reaction Analysis (NRA), Elastic Recoil Detection Analysis (ERDA) and Secondary Ion Mass Spectrometry (SIMS) to 11B/Ni and B/Si samples to measure the boron concentration. We also discuss and show what technique has a better detection limit and lower uncertainty. For the first time in the literature, we obtained the cross section for the $^{11}B(p,\\alpha_0){^8}Be$ nuclear reaction in the energy range from 1.6 up to 2.0 MeV in theta = 170 scattering angle. The SIMS technique was applied to analise samples of metallurgical grade silicon (SiGM) from Metallurgy Group of Instituto de Pesquisas Tecnologicas (IPT) to check the Inductively Coupled Plasma (ICP) measurements carried out by the IPT. Moreover, it was possible to build a calibration curve between SIMS and ICP measurements, that can be used to help of Metallurgy Group with futures ICP\'s measurements.

L’industrie microélectronique est régie depuis plusieurs années par la loi de miniaturisation. En particulier, en technologie CMOS, les procédés de fabrication de l’oxyde permettant l’isolation électrique entre les transistors nécessitent sans cesse d’être améliorés pour répondre aux défis de cette loi. Ainsi, on est passé du procédé d’isolation par oxydation localisée de silicium (LOCOS) au procédé d’isolation par tranchées (STI). Cependant, ce dernier a montré pour les technologies en développement des limitations liées au remplissage non parfait par la silice de tranchées de moins en moins larges (Voiding) et au ‘‘surpolissage’’ des zones les plus larges (Dishing). Le procédé FIPOS (full isolation by porous oxidation of silicon) a été donc proposé comme solution alternative. Il est basé sur la formation sélective et localisée du silicium poreux qui est transformé ensuite en silice par un recuit oxydant. Cette piste prometteuse a constitué le point de départ de ce travail. Dans ce contexte, la thèse s’est focalisée sur deux axes principaux qui concernaient d’une part la maîtrise du procédé d’anodisation électrochimique pour la formation du silicium poreux et d’autre part l’optimisation du procédé d’oxydation. Dans une première partie de notre travail, l’analyse des caractéristiques courant-tension I-V menée sur le silicium durant son anodisation électrochimique a permis de montrer que la formation du silicium poreux dépend fortement de la concentration en dopants. Cette propriété nous a permis de développer une technique simple d’extraction du profil de dopage dans le silicium de type p par voie électrochimique. On a montré que la résolution en profondeur de cette technique est liée au niveau du dopage et s’approche de celle du SIMS (spectroscopie de masse d'ions secondaires) pour les fortes concentrations avec une valeur estimée à 60 nm/décade. Dans une deuxième partie, nous avons mis en évidence la formation localisée du silicium poreux oxydé. En effet, un choix judicieux du potentiel d’anodisation permet de rendre poreux sélectivement des régions fortement dopées implantées sur un substrat de silicium faiblement dopé. Ces régions sont ensuite transformées en oxyde par un recuit oxydant. Par ailleurs, les conditions optimales des processus d’oxydation et d’anodisation permettant d’obtenir un oxyde final de bonne qualité diélectrique sont analysées. / The microelectronic industry is still ruled up to now by the law of miniaturization or scaling. In particular, in CMOS (complementary metal-oxide semiconductor) technology, the oxide allowing electric isolation between p- and n-MOS transistors has also been scaled down and has then exhibited different technological processes going from LOCOS (local oxidation of silicon) to STI (shallow trench isolation) and arriving to FIPOS (full isolation by porous oxidation of silicon). The latter seems to be the most promising alternative solution that can overcome actual limitations of voiding and dishing encountered in the STI process. The approach, which is based on selective formation of porous silicon and its easy transformation to silicon dioxide, has aroused our motivation to be well studied. In this context, the PhD project has first focused on the understanding of electrochemical porous silicon formation, and then on the study of porous silicon oxidation. In a first part of our work, we emphasize the dependence of porous silicon formation with the silicon doping concentration through the investigation of current-voltage I-V characteristics measured on p- and n-type silicon electrodes during electrochemical anodization. Taking advantage of this dependence, we have developed a very simple electrochemical method allowing an accurate determination of doping profiles in p-type silicon. It has been shown that the depth resolution of the technique is readily linked to the doping level and it approaches that of the secondary ion mass spectroscopy (SIMS) analysis for high doping concentrations with an estimated value of 60 nm/decade. In a second step, we highlight the selective formation of oxidized porous silicon. In fact, with a correct choice of the applied potential during anodization, only highly doped regions implanted on a lightly doped silicon wafer are preferentially turned into porous silicon and subsequently oxidized. Furthermore, we give the optimum conditions for oxidation and anodization processes which result in an insulating oxide of reliable dielectric properties.

La thèse porte sur l’étude de la cinétique de Smart Cut™ dans du silicium après implantation hydrogène, pour des températures de recuit comprises entre 500°C et 1300°C. Ainsi, la cinétique de séparation de couches (splitting) est caractérisée en considérant des recuits dans un four à moufle ainsi que des recuits laser. Sur la base de cette caractérisation, un modèle physique, basé sur le comportement de l’hydrogène implanté durant le recuit, est proposé. Le modèle s’appuie sur des caractérisations SIMS de l’évolution de la concentration d’hydrogène durant le recuit, ainsi que sur des simulations numériques. Le modèle propose une explication aux propriétés des films obtenus en fonction des conditions de recuit et mesurées par microscopie optique, AFM ainsi que par des mesures des énergies d’interfaces. Sur la base du modèle de splitting obtenu, deux procédés de fabrication de films de silicium sont proposés pour l’élaboration de matériaux de silicium sur saphir et verre par recuit laser ainsi que pour l’élaboration de feuilles de silicium monocristallin par épitaxie en phase liquide sur substrat silicium implanté. L’étude de premier procédé prouve pour la première fois la possibilité d’appliquer le procédé Smart Cut™ sur des substrats de silicium implanté. Les films ainsi obtenus présentent des grandes surfaces de transfert (wafer de 200 mm), ce qui présente un grand intérêt industriel. L’étude propose différentes caractérisations des films obtenus (AFM, profilométrie optique, mesure 4 pointe). Le deuxième procédé est démontré en utilisant des bancs d’épitaxie en phase liquide de silicium (température supérieure à 1410°C) afin d’effectuer des dépôts sur des substrats de silicium implantés. Les films obtenus montrent un grand degré de croissance épitaxiale (jusqu’à 90% du film déposé mesuré par EBSD) et présentent une épaisseur aussi faible que 100 µm. D’autre part, le détachement par Smart Cut™ des films ainsi déposés est démontré. / At first, the thesis studies the kinetics of Smart Cut™ in silicon implanted with hydrogen ions for annealing temperature in the range 500°C-1300°C. The kinetics is characterized by using a specially-dedicated furnace and by considering laser annealing. Based on the related characterization and observations, a physical model is established based on the behavior of implanted hydrogen during annealing. The model is strengthened by SIMS characterization focused on the evolution of hydrogen during annealing and on numerical calculations. Additionally, the model proposes an explanation for the properties of the obtained films as a function of the annealing conditions, based on optical microscope and AFM observations and bonding energy characterization. Based on this splitting model, two innovative processes for fabrication of silicon films are proposed. The first process allows to produce films of silicon on sapphire and films of silicon on glass by considering a laser annealing. The second produces foils of monocrystalline silicon by liquid phase epitaxial growth on implanted silicon substrate. The study of the first process proves for the first time the possibility to apply the Smart Cut™ for substrates of implanted silicon. The resulting films present large surface of transferred films (up to 200 mm wafers), which is very interesting in an industrial perspective. The study proposes different characterization of the films obtained by this process (AFM, optical profilometry and 4 probe measurement). The second process is demonstrated by using a chamber of liquid phase epitaxial growth of silicon (deposition temperature superior to 1410°C) in order to deposit liquid silicon on implanted silicon substrates. The obtained films show a high degree of epitaxial growth (up to 90% of the film as characterized by EBSD) and show a thickness as low as 100µm. Additionally the detachment by Smart Cut of the deposited films is demonstrated.

Résumé confidentiel / Résumé confidentiel

Cette thèse porte sur l’analyse isotopique de poussières interplanétaires riches en carbone (des micrométéorites ultracarbonées), pour mieux comprendre les processus de fractionnement isotopique des éléments légers (hydrogène et azote) observés dans les phases organiques de la matière extraterrestre primitive. Il est possible, au sein d’une collection de micrométéorites provenant des régions centrales du continent Antarctique, d’identifier des micrométéorites ultracarbonées (UCAMMs – pour UltraCarbonaceous Antarctic MicroMeteorites) qui contiennent environ dix fois plus de carbone que les météorites primitives. Ces particules rares (environ 1% des particules collectées) ouvrent la possibilité d’étudier en laboratoire des particules cométaires de grandes tailles (100-200 microns). Des analyses minéralogiques, chimiques et structurales sur deux fragments de micrométéorites ultracarbonées ont été réalisées dans le cadre de collaborations à l’aide de techniques de microscopie électronique à balayage, microsonde électronique, microspectroscopie infrarouge (synchrotron SOLEIL). Le travail principal de cette thèse concerne l’analyse isotopique de deux UCAMMs par spectrométrie de masse à émission ionique secondaire (SIMS) à l’aide de la microsonde ionique NanoSIMS. Les développements instrumentaux effectués en collaboration entre les équipes du CSNSM et de l’Institut Curie permettent de résoudre les interférences moléculaires avec un pouvoir de séparation en masse supérieur à 20 000 en conservant une sensibilité compatible avec les mesures envisagées. Ainsi, il a été possible de mesurer pour la première fois la composition isotopique de l’hydrogène avec les ions poly-atomiques 12C2D- et 12C2H- et de comparer sa distribution spatiale avec celle de l’azote (12C15N-/12C14N-) obtenue sur la même surface avec le même champ magnétique. Un protocole de fabrication d’une série d’échantillons standards a été développé à partir de polymères isotopiquement marqués en deutérium afin de déterminer le fractionnement instrumental du NanoSIMS démontrant la possibilité d’effectuer des mesures précises de la composition isotopique de l’hydrogène dans la matière organique avec des ions polyatomiques (rapports CD-/CH- et C2D-/C2H-). Les cartographies isotopiques à haute résolution spatiale (200 nm) en C2D-/C2H- et C15N-/C14N- montrent une distribution très hétérogène du deutérium avec des valeurs extrêmes allant jusqu’à 20 fois la valeur des océans terrestres, alors que les rapports 15N/14N restent globalement proches (à 20% près) de la valeur de l’atmosphère terrestre. Les mesures des rapports N/C en imagerie ionique effectuées au NanoSIMS confirment les valeurs mesurées par microsonde électronique et montrent que la matière organique des UCAMMs est riche en azote. Les comparaisons des images isotopiques entre elles et avec les images obtenues par les autres techniques montrent la matière organique des micrométéorites ultracarbonées est constituée de différents composants. Le composant principal ne montre pas de corrélation entre les excès en D et ceux en 15N. Une fraction mineure de la surface analysée montre des excès corrélés en D et en 15N, sans que la composition élémentaire ni la structure de cette composante ne diffèrent significativement du reste de la particule. Enfin, une seconde composante mineure présentant des enrichissements modérés en D et des rapports 15N/14N inférieurs à la valeur de l’atmosphère terrestre. L’ensemble des données peut être expliqué en supposant que les micrométéorites ultracarbonées proviennent de la surface d’objets glacés transneptuniens. Les caractéristiques élémentaires et isotopiques observées dans la matière organique des UCAMMs pourraient résulter du mélange de différentes strates du corps parent ayant subi une irradiation par le rayonnement cosmique galactique à grandes distances héliocentriques. / This thesis covers the isotopic analysis of carbon-rich interplanetary dust (ultracarbonaceous micrometeorites), in order to better understand the isotopic fractionation process of light elements (hydrogen and nitrogen) observed in the organic phases of primitive extraterrestrial matter. It is possible, within a collection of micrometeorites coming from the central regions of the Antarctic continent, to identify ultra-carbonaceous micrometeorites (UCAMMs – for Ultra-Carbonaceous Antarctic MicroMeteorites) which contain about ten times more carbon than the primitive meteorites. These particles are extremely rare and open the possibility to study in laboratory cometary particles of large sizes (100-200 microns). This thesis focuses on the isotopic analyses of UCAMMs, in order to understand the isotopic fractionation processes of light elements (hydrogen and nitrogen) observed in the organic matter of the primitive solar system. Mineralogical, chemical and structural analyses on two fragments of ultra-carbonaceous micrometeorites were performed in the framework of collaborations using techniques of scanning electron microscopy, electron microprobe, infrared microspectroscopy (SOLEIL synchrotron). The main work of this thesis concerns the isotopic analysis of two UCAMMs by Secondary Ion Mass Spectrometry (SIMS) using the NanoSIMS ion microprobe. The instrumental developments performed in collaboration between the CSNSM and the Curie Institute teams allow to resolve molecular interferences with a mass resolving power higher than 20 000 retaining a sensibility compatible with the measurements considered here. So, it has been possible to measure for the first time the hydrogen isotopic composition with the polyatomic ions 12C2D- and 12C2H- and to compare its spatial distribution with that of the nitrogen (12C15N-/12C14N-) obtained on the same surface with the same magnetic field. A protocol for producing a series of standard samples was developed from polymers isotopically enriched in deuterium in order to determine the instrumental fractionation of the NanoSIMS showing the possibility to perform precise measurements of the hydrogen isotopic composition in the organic matter with polyatomic ions (CD-/CH- and C2D-/C2H- ratios). The isotopic maps at high spatial resolution (200 nm) in C2D/C2H and C15N/C14N show a very heterogeneous distribution in deuterium with extreme values going up to 20 times the terrestrial ocean value, whereas the 15N/14N ratios remain globally close (within 20%) to the terrestrial atmosphere value. Measurements of N/C ratios in ion imaging performed at the NanoSIMS confirm the values measured by electron microprobe and show that the organic matter of UCAMMs is rich in nitrogen. Comparisons between isotopic images with each other and with the images obtained by the other techniques show that the organic matter of ultracarbonaceous micrometeorites is constituted of different components. The main component doesn’t exhibit a correlation between the D and 15N excesses. A minor component of the analyzed surface exhibits correlated excesses in D and in 15N, without neither the elemental or structural composition of this component significantly differs from the rest of the grain. Finally, a minor component showing moderate enrichments in D and 15N/14N ratios lower than the terrestrial atmosphere value could have been identified.All the data can be explained assuming that the ultracarbonaceous micrometeorites come from the surface of transneptunian icy objects. The elemental and isotopic characteristics observed in the organic matter of UCAMMs might result from the mixing of different strata of the parent body having undergone irradiation by the galactic cosmic radiation at large heliocentric distances.

The research presented in this dissertation is focused on the construction of complex molecular structures on planar gold and silicon dioxide surfaces using a variety of surface modification techniques, along with thorough surface characterization at each modification step. The dissertation is structured into six separate chapters. In Chapter 1, an introduction to the importance and implications of molecular level surface modification, commonly employed surface modification methods, and available surface characterization techniques is presented. Chapter 2 shows applications of novel methodologies for the functionalization of gold surfaces using alkane dithiol self-assembled monolayers and thiol-ene click chemistry. The resulting functionalized gold substrates demonstrate higher chemical stability than alkanethiol self-assembled monolayers alone and allow spatially controlled functionalization of gold surfaces with light. In Chapter 3, work on tunable hydrophobic surfaces is presented. These surfaces are prepared using a combination of organosilane chemistry, layer-by-layer polyelectrolyte deposition, and thiol-ene chemistry. These hydrophobic surfaces demonstrate high mechanical and chemical stability, even at low pH (1.68). The pinning of water droplets could be tuned on them by the extent of their thermal treatment. Comprehensive surface characterization using X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS), spectroscopic ellipsometry, atomic force microscopy, and water contact angles was carried out on the molecular assemblies prepared on gold and silicon dioxide surfaces. Chapters 4 and 5 are focused on the application, data interpretation, and enhancement in sensitivity of different surface characterization methods. In Chapter 4, XPS, ToF-SIMS, and principal components analysis are used to probe a real world corrosion-type problem. This systemic study showed the destruction of a protective coating composed of a nitrilotris(methylene)triphosphonic acid by a low-intensity fluorine plasma. In Chapter 5, enhancement in ToF-SIMS signals is shown via bismuth metal deposition. These surfaces are also probed by spectroscopic ellipsometry using the interference enhancement method. Finally, Chapter 6 concludes this dissertation by describing possible future work.

A radio frequency (rf) quadrupole instrument, currently known as an Isobar Separator for Anions (ISA), has been integrated into an Accelerator Mass Spectrometry (AMS) system to facilitate anion–gas reactions before the tandem accelerator. An AMS Cs+ sputter source provided > 15 keV ions that were decelerated in the prototype ISA to < 20 eV for reaction in a single collision cell and re-accelerated for AMS analysis. Reaction based isobar suppression capabilities were assessed for smaller AMS systems and a new technique for gas–phase reaction studies was developed. Isobar suppression of 36S– and 12C3– for 36Cl analysis, and YF3– and ZrF3– for 90Sr analysis were studied in NO2 with deceleration to < 12 eV. Observed attenuation cross sections, σ [x 10^–15 cm^2], were σ(S– + NO2) = 6.6, σ(C3– + NO2) = 4.2, σ(YF3– + NO2) = 7.6, σ(ZrF3– + NO2) = 19. With 8 mTorr NO2, relative attenuations of S–/Cl– ~ 10^–6, C3–/Cl– ~ 10^–7, YF3–/SrF3– ~ 5 x 10^–5 and ZrF3–/SrF3– ~ 4 x 10^–6 were observed with Cl– ~ 30% and SrF3– > 90% transmission. Current isobar attenuation limits with < 1.75 MV accelerator terminal voltage and ppm impurity levels were calculated to be 36S–/Cl– ~ 4 x 10^–16, 12C3–/Cl– ~ 1.2 x 10^–16, 90YF3–/SrF3– ~ 10^–15 and 90ZrF3–/SrF3– ~ 10^–16. Using 1.75 MV, four 36Cl reference standards in the range 4 x 10^–13 < 36Cl/Cl < 4 x 10^–11 were analyzed with 8 mTorr NO2. The measured 36Cl/Cl ratios plotted very well against the accepted values. A sample impurity content S/Cl < 6 x 10^–5 was measured and a background level of 36S–/Cl < 9 x 10^–15 was determined. Useful currents of a wide variety of anions are produced in AMS sputter sources and molecules can be identified relatively unambiguously by stripping fragments from tandem accelerators. Reactions involving YF3–, ZrF3–, S– and SO– + NO2 in the ISA analyzed by AMS are described, and some interesting reactants are identified.

A radio frequency (rf) quadrupole instrument, currently known as an Isobar Separator for Anions (ISA), has been integrated into an Accelerator Mass Spectrometry (AMS) system to facilitate anion–gas reactions before the tandem accelerator. An AMS Cs+ sputter source provided > 15 keV ions that were decelerated in the prototype ISA to < 20 eV for reaction in a single collision cell and re-accelerated for AMS analysis. Reaction based isobar suppression capabilities were assessed for smaller AMS systems and a new technique for gas–phase reaction studies was developed. Isobar suppression of 36S– and 12C3– for 36Cl analysis, and YF3– and ZrF3– for 90Sr analysis were studied in NO2 with deceleration to < 12 eV. Observed attenuation cross sections, σ [x 10^–15 cm^2], were σ(S– + NO2) = 6.6, σ(C3– + NO2) = 4.2, σ(YF3– + NO2) = 7.6, σ(ZrF3– + NO2) = 19. With 8 mTorr NO2, relative attenuations of S–/Cl– ~ 10^–6, C3–/Cl– ~ 10^–7, YF3–/SrF3– ~ 5 x 10^–5 and ZrF3–/SrF3– ~ 4 x 10^–6 were observed with Cl– ~ 30% and SrF3– > 90% transmission. Current isobar attenuation limits with < 1.75 MV accelerator terminal voltage and ppm impurity levels were calculated to be 36S–/Cl– ~ 4 x 10^–16, 12C3–/Cl– ~ 1.2 x 10^–16, 90YF3–/SrF3– ~ 10^–15 and 90ZrF3–/SrF3– ~ 10^–16. Using 1.75 MV, four 36Cl reference standards in the range 4 x 10^–13 < 36Cl/Cl < 4 x 10^–11 were analyzed with 8 mTorr NO2. The measured 36Cl/Cl ratios plotted very well against the accepted values. A sample impurity content S/Cl < 6 x 10^–5 was measured and a background level of 36S–/Cl < 9 x 10^–15 was determined. Useful currents of a wide variety of anions are produced in AMS sputter sources and molecules can be identified relatively unambiguously by stripping fragments from tandem accelerators. Reactions involving YF3–, ZrF3–, S– and SO– + NO2 in the ISA analyzed by AMS are described, and some interesting reactants are identified.