This work investigates the fundamental device limits related to operational voltage constraints and linearity in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in order to support the design of robust next-generation high-frequency transceivers. This objective requires a broad understanding of how much "usable" voltage exists compared to conventionally defined breakdown voltage specifications, so the role of avalanche-induced current-crowding (or "pinch-in") effects on transistor performance and reliability are carefully studied. Also, the effects of intermodulation distortion are examined at the transistor-level for new and better understanding of the limits and trade-offs associated with achieving enhanced dynamic range and linearity performance on existing and future SiGe HBT technology platforms. Based on these investigations, circuits designed for superior dynamic range performance are presented.

Hydrocarbon exploration, global navigation satellite systems, computed tomography, and aircraft avionics are just a few examples of applications that require system operation at an ambient temperature, pressure, or radiation level outside the range covered by military specifications. The electronics employed in these applications are known as "extreme environment electronics." On account of the increased cost resulting from both process modifications and the use of exotic substrate materials, only a handful of semiconductor foundries have specialized in the production of extreme environment electronics. Protection of these electronic systems in an extreme environment may be attained by encapsulating sensitive circuits in a controlled environment, which provides isolation from the hostile ambient, often at a significant cost and performance penalty. In a significant departure from this traditional approach, system designers have begun to use commercial off-the-shelf technology platforms with built in mitigation techniques for extreme environment applications. Such an approach simultaneously leverages the state of the art in technology performance with significant savings in project cost. Silicon-germanium is one such commercial technology platform that demonstrates potential for deployment into extreme environment applications as a result of its excellent performance at cryogenic temperatures, remarkable tolerance to radiation-induced degradation, and monolithic integration with silicon-based manufacturing. In this dissertation the radiation response of silicon-germanium technology is investigated, and novel transistor-level layout-based techniques are implemented to improve the radiation tolerance of HBT digital logic.

The research conducted in this dissertation studies the issues regarding the improvement of phase noise performance in a BiCMOS Silicon Germanium (SiGe) cross-coupled differential-pair voltage controlled oscillator (VCO) in a narrowband application as a result of a tail-current shaping technique. With this technique, low-frequency noise components are reduced by increasing the signal amplitude without consuming additional power, and its effect on overall phase noise performance is evaluated. The research investigates effects of the tail-current as a main contributor to phase noise, and also other effects that may influence the phase noise performance like inductor geometry and placement, transistor sizing, and the gain of the oscillator. The hypothesis is verified through design in a standard 0.35 μm BiCMOS process supplied by Austriamicrosystems (AMS). Several VCOs are fabricated on-chip to serve for a comparison and verify that the employment of tail-current shaping does improve phase noise performance. The results are then compared with mathematical models and simulated results, to confirm the hypothesis. Simulation results provided a 3.3 dBc/Hz improvement from -105.3 dBc/Hz to -108.6 dBc/Hz at a 1 MHz offset frequency from the 5 GHz carrier when employing tail-current shaping. The relatively small increase in VCO phase noise performance translates in higher modulation accuracy when used in a transceiver, therefore this increase can be regarded as significant. Parametric analysis provided an additional 1.8 dBc/Hz performance enhancement in phase noise that can be investigated in future works. The power consumption of the simulated VCO is around 6 mW and 4.1 mW for the measured prototype. The circuitry occupies 2.1 mm2 of die area. Copyright / Dissertation (MEng)--University of Pretoria, 2010. / Electrical, Electronic and Computer Engineering / unrestricted

Die vorliegende Arbeit beinhaltet die Synthese und Charakterisierung der Diorganosilane SiX2R2 [X = H, Cl; R = Cp3M (C5Me3H2), Cp4M (C5Me4H)] sowie der Diorganogermane GeX2R2 [X = H, Cl; R = Cp3M (C5Me3H2), Cp4M (C5Me4H), Cp* (C5Me5)]. Es wird die Reaktion der Lithiumsalze SiCl2Cp4MLi2 und SiCl2Cp3MLi2, synthetisiert aus den Diorganosilanen SiCl2Cp3M2 und SiCl2Cp4M2, mit verschiedenen Elementchloriden (PCl3, GeCl4, Si2Cl6 SiHCl3, BCl3) sowie Pyridin vorgestellt. Die entstandenen Produkte und heterozyklischen Verbindungen sind hinsichtlich ihrer Struktur im Festkörper mittels Röntgeneinkristallstrukturanalyse und in Lösung mittels NMR-Spektroskopie untersucht worden. Darüber hinaus wird die Abscheidung von dünnen Germaniumschichten über einen apparativ vereinfachten MOCVD-Prozess bei Atmosphärendruck unter Verwendung der Diorganogermane GeH2Cp4M2 und GeH2Cp*2 beschrieben. Als Substrate wurden Siliciumwafer, Glas und flexible Kaptonfolien verwendet. Die abgeschiedenen Germaniumschichten wurden mittels RAMAN-Spektroskopie, Vis/NIR-Spektroskopie, Elektronenmikroskopie, energiedispersiver Röntgenspektroskopie (EDX) und Röntgenphotoelektronenspektroskopie (XPS) untersucht. Die abgeschiedenen amorphen Germaniumschichten wiesen eine kontrollierbare Dicke zwischen 30 – 780 nm auf. Die Homogenität und Rauheit der abgeschiedenen Schichten wurde mittels rasterkraftmikroskopischen Messungen bestimmt. Die Abscheideraten und damit die Schichtdicken konnten mithilfe der Temperatur und der Zeit variiert werden.

Spatial confinement of electrons and their interactions as well as confinement of the spin dimensionality often yield drastic changes of the electronic and magnetic properties of solids. Novel quantum transport and optical phenomena, involving electronic spin degrees of freedom in semiconductor heterostructures, as well as a rich variety of exotic quantum ground states and magnetic excitations in complex transition metal oxides that arise upon such confinements, belong therefore to topical problems of contemporary condensed matter physics. In this work electron spin systems in reduced dimensions are studied with Electron Spin Resonance (ESR) spectroscopy, a method which can provide important information on the energy spectrum of the spin states, spin dynamics, and magnetic correlations. The studied systems include quasi onedimensional spin chain materials based on transition metals Cu and Ni. Another class of materials are semiconductor heterostructures made of Si and Ge. Part I deals with the theoretical background of ESR and the description of the experimental ESR setups used which have been optimized for the purposes of the present work. In particular, the development and implementation of axial and transverse cylindrical resonant cavities for high-field highfrequency ESR experiments is discussed. The high quality factors of these cavities allow for sensitive measurements on μm-sized samples. They are used for the investigations on the spin-chain materials. The implementation and characterization of a setup for electrical detected magnetic resonance is presented. In Part II ESR studies and complementary results of other experimental techniques on two spin chain materials are presented. The Cu-based material Linarite is investigated in the paramagnetic regime above T > 2.8 K. This natural crystal constitutes a highly frustrated spin 1/2 Heisenberg chain with ferromagnetic nearest-neighbor and antiferromagnetic next-nearestneighbor interactions. The ESR data reveals that the significant magnetic anisotropy is due to anisotropy of the g-factor. Quantitative analysis of the critical broadening of the linewidth suggest appreciable interchain and interlayer spin correlations well above the ordering temperature. The Ni-based system is an organic-anorganic hybrid material where the Ni2+ ions possessing the integer spin S = 1 are magnetically coupled along one spatial direction. Indeed, the ESR study reveals an isotropic spin-1 Heisenberg chain in this system which unlike the Cu half integer spin-1/2 chain is expected to possess a qualitatively different non-magnetic singlet ground state separated from an excited magnetic state by a so-called Haldane gap. Surprisingly, in contrast to the expected Haldane behavior a competition between a magnetically ordered ground state and a potentially gapped state is revealed. In Part III investigations on SiGe/Si quantum dot structures are presented. The ESR investigations reveal narrowlines close to the free electron g-factor associated with electrons on the quantum dots. Their dephasing and relaxation times are determined. Manipulations with sub-bandgap light allow to change the relative population between the observed states. On the basis of extensive characterizations, strain, electronic structure and confined states on the Si-based structures are modeled with the program nextnano3. A qualitative model, explaining the energy spectrum of the spin states is proposed.:Abstract i Contents iii List of Figures vi List of Tables viii 1 Preface 1 I Background and Experimental 5 2 Principles of ESR 7 2.1 The Resonance Phenomenon . . . . . . . . . . . . . . . . . . . 7 2.2 ESR Spectrum . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.2.1 The g -factor . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.2.2 Relaxation Times . . . . . . . . . . . . . . . . . . . . . . 12 2.2.3 Lineshape Properties . . . . . . . . . . . . . . . . . . . . 13 2.3 Effective Spin Hamiltonian . . . . . . . . . . . . . . . . . . . . . 15 2.4 Spin-Orbit Coupling . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.5 d-electrons in a Crystal Field . . . . . . . . . . . . . . . . . . . . 17 2.6 Interactions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2.6.1 Dipolar Coupling . . . . . . . . . . . . . . . . . . . . . . 23 2.6.2 Exchange Interaction . . . . . . . . . . . . . . . . . . . . 23 2.6.3 Superexchange . . . . . . . . . . . . . . . . . . . . . . . 24 2.6.4 Symmetric Anisotropic Exchange . . . . . . . . . . . . 25 2.6.5 Antisymmetric Anisotropic Exchange . . . . . . . . . . 25 2.6.6 Hyperfine Interaction . . . . . . . . . . . . . . . . . . . 26 3 Experimental 27 3.1 Setup for Experiments at 10GHz . . . . . . . . . . . . . . . . . 27 3.2 Implementation of an EDMR Setup . . . . . . . . . . . . . . . . 29 3.2.1 Basic Characterization . . . . . . . . . . . . . . . . . . . 31 3.3 High Frequency Setup . . . . . . . . . . . . . . . . . . . . . . . . 31 3.3.1 MillimeterWave Vector Network Analyzer . . . . . . . 33 3.3.2 Waveguides and Cryostats . . . . . . . . . . . . . . . . . 34 3.4 Development of the Resonant Cavity Setup . . . . . . . . . . . 35 3.4.1 Mode Propagation . . . . . . . . . . . . . . . . . . . . . 38 3.4.2 Resonant CavityModes . . . . . . . . . . . . . . . . . . 40 3.4.3 Resonant Cavity Design . . . . . . . . . . . . . . . . . . 41 3.4.4 Resonant Cavity Sample Stick . . . . . . . . . . . . . . . 45 3.4.5 Experimental Characterization . . . . . . . . . . . . . . 47 3.4.6 Performing an ESR Experiment . . . . . . . . . . . . . . 53 II Quasi One-Dimensional Spin-Chains 57 4 Motivation 59 5 Quasi One-Dimensional Systems 61 5.1 Magnetic Order and Excitations . . . . . . . . . . . . . . . . . . 63 5.2 Competing Interactions . . . . . . . . . . . . . . . . . . . . . . . 64 5.3 Haldane Spin Chain . . . . . . . . . . . . . . . . . . . . . . . . . 66 6 Linarite 69 6.1 Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 6.2 Magnetization and ESR . . . . . . . . . . . . . . . . . . . . . . . 71 6.3 NMR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79 6.4 Summary and Conclusion . . . . . . . . . . . . . . . . . . . . . 81 6.5 Outlook . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 7 The Ni-hybrid NiCl3C6H5CH2CH2NH3 83 7.1 Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 7.2 Susceptibility andMagnetization . . . . . . . . . . . . . . . . . 85 7.3 ESR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88 7.4 Further Investigations . . . . . . . . . . . . . . . . . . . . . . . . 95 7.5 Summary and Conclusion . . . . . . . . . . . . . . . . . . . . . 96 8 Summary 99 III SiGe Nanostructures 101 9 Motivation 103 10 SiGe Semiconductor Nanostructures 107 10.1 Background . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107 10.1.1 Silicon and Germanium . . . . . . . . . . . . . . . . . . 107 10.1.2 Epitaxial Growth of SiGe Heterostructures . . . . . . . 109 10.1.3 Strain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 10.1.4 Band Deformation . . . . . . . . . . . . . . . . . . . . . 112 10.2 Sample Structure and Characterization . . . . . . . . . . . . . 114 11 Modelling of SiGe/Si Heterostructures 119 11.1 Program Structure . . . . . . . . . . . . . . . . . . . . . . . . . . 120 11.2 Implementation of Si/Ge System . . . . . . . . . . . . . . . . . 121 11.3 Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 11.3.1 Single Quantum Dot . . . . . . . . . . . . . . . . . . . . 123 11.3.2 Multiple Quantum Dots . . . . . . . . . . . . . . . . . . 127 11.4 Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 11.5 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 12 ESR Experiments on Si/SiGe Quantum Dots 135 12.1 ESR on Si Structures . . . . . . . . . . . . . . . . . . . . . . . . . 135 12.2 Experimental Results . . . . . . . . . . . . . . . . . . . . . . . . 137 12.2.1 Samples grown at 600◦C . . . . . . . . . . . . . . . . . . 138 12.2.2 Samples grown at 700◦C . . . . . . . . . . . . . . . . . . 139 12.2.3 T1-Relaxation Time . . . . . . . . . . . . . . . . . . . . . 143 12.2.4 Effect of Illumination . . . . . . . . . . . . . . . . . . . . 145 12.3 Discussion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 12.3.1 Quantum Dots . . . . . . . . . . . . . . . . . . . . . . . 149 12.3.2 Assignment of ESR Lines . . . . . . . . . . . . . . . . . . 150 12.3.3 Relaxation Times . . . . . . . . . . . . . . . . . . . . . . 153 12.3.4 Donors in Heterostructures . . . . . . . . . . . . . . . . 153 12.4 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156 13 Summary and Outlook 157 Bibliography 163 Acknowledgements 176

This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the authors knowledge.

Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. Epitaxy is a sensitive step in the device processing and choosing an appropriate thermal budget is crucial to avoid the dopant out–diffusion and strain relaxation. Strain is important for bandgap engineering in (SiGe/Si) heterostructures, and to increase the mobility of the carriers. An example for the latter application is implementing SiGe as the biaxially strained channel layer or in recessed source/drain (S/D) of pMOSFETs. For this case, SiGe is grown selectively in recessed S/D regions where the Si channel region experiences uniaxial strain.The main focus of this Ph.D. thesis is on developing the first empirical model for selective epitaxial growth of SiGe using SiH2Cl2, GeH4 and HCl precursors in a reduced pressure chemical vapor deposition (RPCVD) reactor. The model describes the growth kinetics and considers the contribution of each gas precursor in the gas–phase and surface reactions. In this way, the growth rate and Ge content of the SiGe layers grown on the patterned substrates can be calculated. The gas flow and temperature distribution were simulated in the CVD reactor and the results were exerted as input parameters for the diffusion of gas molecules through gas boundaries. Fick‟s law and the Langmuir isotherm theory (in non–equilibrium case) have been applied to estimate the real flow of impinging molecules. For a patterned substrate, the interactions between the chips were calculated using an established interaction theory. Overall, a good agreement between this model and the experimental data has been presented. This work provides, for the first time, a guideline for chip manufacturers who are implementing SiGe layers in the devices.The other focus of this thesis is to implement SiGe layers or dots as a thermistor material to detect infrared radiation. The result provides a fundamental understanding of noise sources and thermal response of SiGe/Si multilayer structures. Temperature coefficient of resistance (TCR) and noise voltage have been measured for different detector prototypes in terms of pixel size and multilayer designs. The performance of such structures was studied and optimized as a function of quantum well and Si barrier thickness (or dot size), number of periods in the SiGe/Si stack, Ge content and contact resistance. Both electrical and thermal responses of such detectors were sensitive to the quality of the epitaxial layers which was evaluated by the interfacial roughness and strain amount. The strain in SiGe material was carefully controlled in the meta–stable region by implementingivcarbon in multi quantum wells (MQWs) of SiGe(C)/Si(C). A state of the art thermistor material with TCR of 4.5 %/K for 100×100 μm2 pixel area and low noise constant (K1/f) value of 4.4×10-15 is presented. The outstanding performance of these devices is due to Ni silicide contacts, smooth interfaces, and high quality of multi quantum wells (MQWs) containing high Ge content.The novel idea of generating local strain using Ge multi quantum dots structures has also been studied. Ge dots were deposited at different growth temperatures in order to tune the intermixing of Si into Ge. The structures demonstrated a noise constant of 2×10-9 and TCR of 3.44%/K for pixel area of 70×70 μm2. These structures displayed an improvement in the TCR value compared to quantum well structures; however, strain relaxation and unevenness of the multi layer structures caused low signal–to–noise ratio. In this thesis, the physical importance of different design parameters of IR detectors has been quantified by using a statistical analysis. The factorial method has been applied to evaluate design parameters for IR detection improvements. Among design parameters, increasing the Ge content of SiGe quantum wells has the most significant effect on the measured TCR value. / QC 20110405

Orientadores: Gustavo de Medeiros Azevedo, Ângelo Malachias de Souza, Eduardo Granado Monteiro da Silva / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-19T08:06:03Z (GMT). No. of bitstreams: 1 Gasperini_AntonioAugustoMalfatti_D.pdf: 9911404 bytes, checksum: e5b4150f5a1f5f42c4d0e24b92e46c65 (MD5) Previous issue date: 2011 / Resumo: Neste trabalho estudamos a formação e estrutura de nanopartículas (NPs) de GeSi encapsuladas em sílica, utilizando técnicas baseadas em luz síncrotron, complementadas com imagens de microscopia eletrônica de transmissão. Obtivemos a forma, o diâmetro médio e a dispersão de tamanhos usando espalhamento de raios X a baixos ângulos em incidência rasante (GISAXS). A partir dos dados de difração de raios X (XRD) foi possível obter a fase cristalina, o parâmetro de rede e o tamanho médio dos cristalitos. Estes resultados serviram como dados de entrada em um modelo para análise através da técnica de estrutura fina de absorção de raios X (EXAFS), a qual forneceu informações sobre a estrutura local na vizinhança dos átomos de Ge. Apesar dos resultados de cada uma das técnicas acima serem comumente analisados de forma separada, a combinação destas técnicas leva a uma melhor compreensão das propriedades estruturais das NPs. Através da combinação dos resultados tivemos acesso a informações tais como a deformação da rede cristalina (strain), a fração de átomos cm ambientes cristalino e amorfo, a fração de átomos de Ge diluída na matriz e a possibilidade de formação de estruturas do tipo core-shell cristalino-amorfo. Resultados adicionais como a origem do strain e a temperatura de solidificação das NPs, dentre outros, foram obtidos através de um experimento in situ de absorção de raios X em energia dispersiva (DXAS), inédito na análise deste sistema. Por fim, utilizamos as técnicas acima citadas para acompanhar a evolução dos parâmetros estruturais em amostras tratadas termicamente durante diferentes intervalos de tempo / Abstract: In this work we study the formation and structure of GeSi nanoparticles embedded in silica matrix using synchrotron-based techniques complemented by TEM images. Shape, average diameter and size dispersion were obtained from grazing incidence small angle X-ray scattering. X-ray diffraction measurements were used to obtain crystalline phase, lattice parameter and crystallite mean sizes. By using these techniques as input for extended X-ray absorption fine structure analysis, the local structure surrounding Ge atoms is investigated. Although the results for each of the methods mentioned above are usually analyzed separately, the combination of such techniques leads to an improved understanding of nanoparticle structural properties. Crucial indirect parameters that cannot be quantified by other means are accessed in our work, such as local strain, possibility of forming core-shell crystalline-amorphous structures, fraction of Ge atoms diluted in the matrix and amorphous and crystalline Ge fraction. Additional results as the origin of the strain and temperature of solidification of NPs, among others, were obtained through an in situ energy dispersive X-ray absorption experiment (DXAS), unheard in this system. Finally, we use the techniques mentioned above to monitor the evolution of the structural parameters of samples annealed during different time intervals / Doutorado / Física / Doutor em Ciências

This research looks into the design of an integrated in-phase/quadrature (I/Q) VCO operating at 5 GHz. The goal is to design a phase shifter that is implemented at the LO used for RF up conversion. The target application for the phase shifter is towards phased array antennas operating at 5 GHz. Instead of designing multiple VCOs that each deliver a variety of phases, two identical LC-VCOs are coupled together to oscillate at the same frequency and deliver four outputs that are 90 ° out of phase. By varying the amplitudes of the in-phase and quadrature signals independently using VGAs before adding them together, a resultant out-of-phase signal is obtained. A number of independently variable out-of-phase signals can be obtained from these 90 ° out-of-phase signals and this technique is better known as the vector sum method of phase shifting. Control signals to the inputs of the VGAs required to obtain 22.5 ° phase shifts were designed from simulations and are generated using 16-bit DACs. The design is implemented and manufactured using a 0.35 µm SiGe BiCMOS process and the complete prototype IC occupies an area of 2.65 × 2.65 mm2. The I/Q VCO with 360 ° variable phase outputs occupies 1.10 × 0.85 mm2 of chip area and the 16-bit DAC along with its decoding circuitry occupies 0.41 × 0.13 mm2 of chip area. The manufactured quadrature VCO was found to oscillate between 4.12 ~ 4.74 GHz and consumes 23.1 mW from a 3.3 V supply without its buffer circuitry. A maximum phase noise of -78.5 dBc / Hz at a 100 kHz offset and -108.17 dBc / Hz at a 1 MHz offset was measured and the minimum VCO figure of merit is 157.8 dBc / Hz. The output voltages of the 16 bit DAC are within 3.5 % of the design specifications. When the phase shifter is controlled by the 16 DAC signals, the maximum measured phase error of the phase shifter is lower than 10 %. / Dissertation (MEng)--University of Pretoria, 2009. / Electrical, Electronic and Computer Engineering / unrestricted

A 5 GHz continuous unlicensed bandwidth is available at millimeter-wave (mm-wave) frequencies around 60 GHz and offers the prospect for multi gigabit wireless applications. The inherent atmospheric attenuation at 60 GHz due to oxygen absorption makes the frequency range ideal for short distance communication networks. For these mm-wave wireless networks, the low noise amplifier (LNA) is a critical subsystem determining the receiver performance i.e., the noise figure (NF) and receiver sensitivity. It however proves challenging to realise high performance mm-wave LNAs in a silicon (Si) complementary metal-oxide semiconductor (CMOS) technology. The mm-wave passive devices, specifically on-chip inductors, experience high propagation loss due to the conductivity of the Si substrate at mm-wave frequencies, degrading the performance of the LNA and subsequently the performance of the receiver architecture. The research is aimed at realising a high performance mm-wave LNA in a Si BiCMOS technology. The focal points are firstly, the fundamental understanding of the various forms of losses passive inductors experience and the techniques to address these issues, and secondly, whether the performance of mm-wave passive inductors can be improved by means of geometry optimising. An associated hypothesis is formulated, where the research outcome results in a preferred passive inductor and formulates an optimised passive inductor for mm-wave applications. The performance of the mm-wave inductor is evaluated using the quality factor (Q-factor) as a figure of merit. An increased inductor Q-factor translates to improved LNA input and output matching performance and contributes to the lowering of the LNA NF. The passive inductors are designed and simulated in a 2.5D electromagnetic (EM) simulator. The electrical characteristics of the passive structures are exported to a SPICE netlist which is included in a circuit simulator to evaluate and investigate the LNA performance. Two LNAs are designed and prototyped using the 13μ-m SiGe BiCMOS process from IBM as part of the experimental process to validate the hypothesis. One LNA implements the preferred inductor structures as a benchmark, while the second LNA, identical to the first, replaces one inductor with the optimised inductor. Experimental verification allows complete characterization of the passive inductors and the performance of the LNAs to prove the hypothesis. According to the author's knowledge, the slow-wave coplanar waveguide (S-CPW) achieves a higher Q-factor than microstrip and coplanar waveguide (CPW) transmission lines at mm-wave frequencies implemented for the 130 nm SiGe BiCMOS technology node. In literature, specific S-CPW transmission line geometry parameters have previously been investigated, but this work optimises the signal-to-ground spacing of the S-CPW transmission lines without changing the characteristic impedance of the lines. Optimising the S-CPW transmission line for 60 GHz increases the Q-factor from 38 to 50 in simulation, a 32 % improvement, and from 8 to 10 in measurements. Furthermore, replacing only one inductor in the output matching network of the LNA with the higher Q-factor inductor, improves the input and output matching performance of the LNA, resulting in a 5 dB input and output reflection coefficient improvement. Although a 5 dB improvement in matching performance is obtained, the resultant noise and gain performance show no significant improvement. The single stage LNAs achieve a simulated gain and NF of 13 dB and 5.3 dB respectively, and dissipate 6 mW from the 1.5 V supply. The LNA focused to attain high gain and a low NF, trading off linearity and as a result obtained poor 1 dB compression of -21.7 dBm. The LNA results are not state of the art but are comparable to SiGe BiCMOS LNAs presented in literature, achieving similar gain, NF and power dissipation figures. / Dissertation (MEng)--University of Pretoria, 2012. / Electrical, Electronic and Computer Engineering / unrestricted