No description available.

Graphene base transistors (GBTs) have been, recently, proposed to overcome the intrinsic limitations of the graphene field effect transistors (GFETs) and exploit the graphene unique properties in high frequency (HF) applications. These devices utilize single layer graphene as the base material in the vertical hot-electron transistors. In an optimized GBT, the ultimate thinness of the graphene-base and its high conductivity, potentially, enable HF performance up to the THz region.  This thesis presents an experimental investigation on the GBTs as well as integration process developments for the fabrication of graphene-based devices. In this work, a full device fabrication and graphene integration process were designed with high CMOS compatibility considerations. To this aim, basic process modules, such as graphene transfer, deposition of materials on graphene, and formation of tunnel barriers, were developed and optimized. A PDMS-supporting graphene transfer process were introduced to facilitate the wet/dry wafer-scale transfer from metal substrate onto an arbitrarily substrate. In addition, dielectric deposition on graphene using atomic layer deposition (ALD) was investigated. These dielectric layers, mainly, served as the base-collector insulators in the fabricated GBTs. Moreover, the integration of silicon (Si) on the graphene surface was studied. Using the developed fabrication process, the first proof of concept devices were demonstrated. These devices utilized 5 nm-thick silicon oxide (SiO2) and about 20 nm-thick aluminum oxide (Al2O3) as the emitter-base insulator (EBI) and base-collector insulator (BCI). The direct current (DC) functionality of these devices exhibited &gt;104 on/off current ratios and a current transfer ratio of about 6%. The performance of these devices was limited by the non-optimized barrier parameters and device manufacturing technology. The possibility to improve and optimize the GBT performance was demonstrated by applying different barrier optimization approaches. Comparing to the proof of concept devices, several orders of magnitude higher injection current density was achieved using a bilayer dielectric tunnel barrier. Utilizing the novel TmSiO/TiO2 (1 nm/6 nm) dielectric stack, this tunnel barrier prevents defect mediated tunneling and, simultaneously, promotes the Fowler-Nordheim tunneling (FNT) and step tunneling (ST). Furthermore, it was shown that Si/graphene Schottky junction can significantly improve the current gain by reducing the electron backscattering at the base-collector barrier. In this thesis, a maximum current transfer ratio of about 35% has been achieved. / <p>QC 20160503</p>

Fundamental conservation laws predict a dissipationless transport behavior in one-dimensional S=1/2 spin chains. This truly ballistic heat transport suggests anomalously large life times and mean free paths of the elementary excitations of the spin chain, spinons. Despite this rigorous prediction, in any real system, the transport is dissipative, due to the interaction of spinons with defects and phonons. Nevertheless, a promising large magnetic thermal conductivity \\kappa_{mag} has been observed in a few copper-oxide systems. Characteristic for these cuprate systems is a large exchange interaction J along the spin chain. However, due to the limited number and knowledge of the systems showing a large \\kappa_{mag}, it has been difficult, to identify overarching trends. The goal of this thesis therefore is twofold. First, to test new compounds for the appearance of magnetic heat transport and second, to broaden the understanding of the known compounds by studying the influence of various kinds of impurities. In particular, three families of materials are studied. First, the thermal conductivity \\kappa(T) of the compounds TiOBr and TiOCl is investigated. Below room temperature the compounds undergo two phase transitions T_{c2} and T_{c1}. Above T_{c2} the compounds contain S=1/2 spin chains with J_{Cl}=676 K and J_{Br}=375 K respectively, formed by direct orbital overlap of the Ti-atoms. Below T_{c1} the chains dimerize to form a non-magnetic ground state. The thermal conductivity exhibits pronounced anomalies at T_{c2} and T_{c1} confirming the transitions being of second and first order respectively. Surprisingly, \\kappa(T) appears to be dominated by phonon heat conduction, since no indications of a significant magnetic contribution is found. This is in contrast to the expectation of a spin chain system. In this context possible scenarios to understand the unusual behavior of the thermal conductivity are discussed. Second, two related materials, the single chain Sr_{2}CuO_{3} and the double chain SrCuO_{2} are investigated. In high purity samples huge magnetic heat conductivities and concomitantly, extremely large spinon mean free paths of >0.5 µm for Sr_{2}CuO_{3} and >1 µm for SrCuO_{2} are observed. This demonstrates that \\kappa_{mag} is only limited by extrinsic scattering processes, which is a clear signature of ballistic transport in the underlying spin model. Additionally, various subtle modifications of the spin chain are studied. Due to the large mean free path a pristine picture of the intrinsic incidents is expected. In particular, a chemical pressure is applied to the spin chain by doping SrCuO_{2} with Ca. This has a surprisingly strong effect on \\kappa_{mag}. Furthermore, the influence of magnetic Ni and non-magnetic Mg doping is studied for SrCuO_{2}. While Ni-doping has a large impact on the magnetic thermal conductivity, Mg-doping shows no influence. In order to clarify this surprising behavior, \\kappa_{mag} is compared to measurements of the single chain compound Sr_{2}CuO_{3}. Third, the magnetic thermal conductivity of the spin chain material CaCu_{2}O_{3} doped with non-magnetic Zn impurities is studied. \\kappa_{mag} of the pure compound is linear up to room temperature, which is indicative of a T-independent scattering rate of the magnetic excitations. Both, magnitude and T-dependence of \\kappa_{mag} exhibit a very unusual doping dependence. At moderate Zn-doping the linear temperature dependence of \\kappa_{mag} is preserved and the absolute value of \\kappa_{mag} increases. A slight suppression of \\kappa_{mag} occurs only at high Zn doping, where, surprisingly, the T-dependence of \\kappa_{mag} changes from linearity to one with a higher power of T . In order to clarify this surprising behavior, the results are compared to a detailed study of the g-tensor of the impurities in the material by means of ESR experiments, which reveal a change of the impurity type with increasing Zn-content.

En spintronique, l’étude des hétérostructures multicouches composées d'une électrode ferromagnétique et d'une couche isolante mince, c'est-à-dire des jonctions tunnel magnétiques (JTM), est particulièrement importante. Le système canonique est le Fe/MgO/Fe où les hautes valeurs du rapport de la magnétoresistance tunnel (TMR) ont été mesurées. Le facteur crucial définissant la performance de la jonction est l’imperfection structurelle dans un dispositif réel. Dans notre travail, nous nous sommes concentrés sur des lacunes d'oxygène dans MgO. Au moyen de la théorie de la fonctionnelle de densité, nous avons étudié les propriétés électroniques de l'état fondamental des lacunes d'oxygène simples et doubles dans MgO massif, appelées respectivement centres F et M. Nous avons ensuite étudié l'impact de ces lacunes sur le transport balistique dans les jonctions magnétiques. Nous avons démontré le rôle supérieur joué par les centres M et nous avons prouvé qu'un transport cohérent, préservant le spin et la symétrie des électrons, est possible en présence de centres M. / In sprintronics, the study of multilayer heterostructures composed of a ferromagnetic electrodes and a thin insulating layer, i.e. magnetic tunnel junctions (MTJs), is of special importance. The canonical systems are MTJs made of Fe/MgO/Fe where hight tunneling mangetoresistance ratio (TMR) values were measured. The crucial factor defining the junction performance is the structural imperfection appearing in a real devices. In our work we focused in particular on oxygen vacancies in MgO. By means of density functional theory we studied ground state electronic properties of single and double oxygen vacancies, referred as F and M centers, respectively, in bulk MgO. We then switched to full junctions where we investigated the impact of vacancies on the ballistic transport. We demonstrated that M centers played a superior role and proved that coherent transport, preserving electrons spin and symmetry, is possible in presence of paired vacancies.

Cette thèse s’intéresse à la fabrication de jonctions magnétiques à effet tunnel organiques. Les MTJ organiques remplacent la barrière par une molécule. Il a fallu d’abord vaincre les problèmes liés à la fabrication de ces MTJ. En effet, ce type de jonction est très fragile du point de vue de sa fabrication, car incompatible avec les solvants. Un nouveau procédé de fabrication a été mis au point. Ce procédé fait appel à de petites « billes » nanométriques dispersées à la surface d’un échantillon. Ce procédé a été utilisé avec succès. Nous avons obtenu une réponse magnétique des échantillons. Des mesures XAS et de magnéto-transport ont été menées sur des jonctions MgO. Une approche in operando innovante a été utilisée. Ces mesures ont démontré que la présence d’oxyde de fer aux interfaces limite la TMR. Pour finir, des mesures SR-PES ont été menées dans le but d’étudier la polarisation d’interface de Cu/MnPc dans le système Cu(100)//Co/Cu/MnPc. Ces mesures ont révélé que cette interface est très fortement polarisée en spin. Les structures qui apparaissent dans les spectres ne peuvent être expliquées par une simple atténuation du signal du cobalt due à la couverture de molécules. / This thesis concerns the fabrication of organic magnetics tunnel junctions. Organic MTJs replace the barrier with a molecule. First, we had to overcome the problems of MTJ manufacturing. Indeed, this type of junction is very fragile from the point of view of its manufacturing because they are incompatible with solvents. A new manufacturing process has been developed. This process uses small nanometric "beads" scattered on the surface of a sample. This method has been used successfully and we obtained a magnetic response of the samples. XAS and magneto-transport measurements were conducted on MgO junctions. An innovative in operando approach was used. These measurements revealed that the presence of oxide at the interfaces limits the TMR. Finally, SR-PES measurements were carried out in order to study the Cu/MnPc interface polarization in the Cu (100)//Co/Cu/MnPc system. These measurements revealed that this interface is strongly spin polarized. Structures appearing in the spectra cannot be explained by a simple attenuation of the cobalt signal due to molecule coverage.

Fundamental conservation laws predict a dissipationless transport behavior in one-dimensional S=1/2 spin chains. This truly ballistic heat transport suggests anomalously large life times and mean free paths of the elementary excitations of the spin chain, spinons. Despite this rigorous prediction, in any real system, the transport is dissipative, due to the interaction of spinons with defects and phonons. Nevertheless, a promising large magnetic thermal conductivity \\kappa_{mag} has been observed in a few copper-oxide systems. Characteristic for these cuprate systems is a large exchange interaction J along the spin chain. However, due to the limited number and knowledge of the systems showing a large \\kappa_{mag}, it has been difficult, to identify overarching trends. The goal of this thesis therefore is twofold. First, to test new compounds for the appearance of magnetic heat transport and second, to broaden the understanding of the known compounds by studying the influence of various kinds of impurities. In particular, three families of materials are studied. First, the thermal conductivity \\kappa(T) of the compounds TiOBr and TiOCl is investigated. Below room temperature the compounds undergo two phase transitions T_{c2} and T_{c1}. Above T_{c2} the compounds contain S=1/2 spin chains with J_{Cl}=676 K and J_{Br}=375 K respectively, formed by direct orbital overlap of the Ti-atoms. Below T_{c1} the chains dimerize to form a non-magnetic ground state. The thermal conductivity exhibits pronounced anomalies at T_{c2} and T_{c1} confirming the transitions being of second and first order respectively. Surprisingly, \\kappa(T) appears to be dominated by phonon heat conduction, since no indications of a significant magnetic contribution is found. This is in contrast to the expectation of a spin chain system. In this context possible scenarios to understand the unusual behavior of the thermal conductivity are discussed. Second, two related materials, the single chain Sr_{2}CuO_{3} and the double chain SrCuO_{2} are investigated. In high purity samples huge magnetic heat conductivities and concomitantly, extremely large spinon mean free paths of >0.5 µm for Sr_{2}CuO_{3} and >1 µm for SrCuO_{2} are observed. This demonstrates that \\kappa_{mag} is only limited by extrinsic scattering processes, which is a clear signature of ballistic transport in the underlying spin model. Additionally, various subtle modifications of the spin chain are studied. Due to the large mean free path a pristine picture of the intrinsic incidents is expected. In particular, a chemical pressure is applied to the spin chain by doping SrCuO_{2} with Ca. This has a surprisingly strong effect on \\kappa_{mag}. Furthermore, the influence of magnetic Ni and non-magnetic Mg doping is studied for SrCuO_{2}. While Ni-doping has a large impact on the magnetic thermal conductivity, Mg-doping shows no influence. In order to clarify this surprising behavior, \\kappa_{mag} is compared to measurements of the single chain compound Sr_{2}CuO_{3}. Third, the magnetic thermal conductivity of the spin chain material CaCu_{2}O_{3} doped with non-magnetic Zn impurities is studied. \\kappa_{mag} of the pure compound is linear up to room temperature, which is indicative of a T-independent scattering rate of the magnetic excitations. Both, magnitude and T-dependence of \\kappa_{mag} exhibit a very unusual doping dependence. At moderate Zn-doping the linear temperature dependence of \\kappa_{mag} is preserved and the absolute value of \\kappa_{mag} increases. A slight suppression of \\kappa_{mag} occurs only at high Zn doping, where, surprisingly, the T-dependence of \\kappa_{mag} changes from linearity to one with a higher power of T . In order to clarify this surprising behavior, the results are compared to a detailed study of the g-tensor of the impurities in the material by means of ESR experiments, which reveal a change of the impurity type with increasing Zn-content.

This thesis addresses electron spin phenomena in semi-conductor quantum dots/anti-dots from a computational perspective. In the first paper (paper I) we have studied spin-dependent transport through open quantum dots, i.e., dots strongly coupled to their leads, within the Hubbard model. Results in this model were found consistent with experimental data and suggest that spin-degeneracy is lifted inside the dot – even at zero magnetic field. Similar systems were also studied with electron-electron effects incorporated via Density Functional Theory (DFT) in paper III. Within DFT we found a significant spin-polarisation in the dot at low electron densities. As the electron density increases the spin polarisation in the dot gradually diminishes. These findings are consistent with available experimental observations. Notably, the polarisation is qualitatively different from the one found in the Hubbard model – this indicates that the simplified approach to electronelectron interaction in the Hubbard model might not always be reliable. In paper II we propose a spin-filter device based on resonant backscattering of edge states against a quantum anti-dot embedded in a quantum wire. A magnetic field is applied and the spin up/spin down states are separated through Zeeman splitting. Their respective resonant states may be tuned so that the device can be used to filter either spin in a controlled way. / <p>Report code: LIU-Tek-Lic 2005:65</p>

Le rendement consommation/fréquence des futures générations de circuits intégrés sur silicium n’est pas satisfaisant à cause de la faible mobilité électronique de ce semi-conducteur et des relativement grandes tensions d’alimentation VDD requises. Ce travail se propose d’explorer numériquement les potentialités des transistors à effet de champ (FET) à base de matériaux III-V à faible bande interdite et à haute mobilité pour un fonctionnement en haute fréquence et une ultra basse consommation. Tout d’abord, l’étude consiste à analyser théoriquement le fonctionnement d’une capacité MOS III-V en résolvant de façon auto-cohérente les équations de Poisson et Schrödinger (PS). On peut ainsi comprendre comment et pourquoi les effets extrinsèques comme les états de pièges à l’interface high-k/III-V dégradent les caractéristiques intrinsèques. Pour une géométrie 2D, les performances des dispositifs sont estimées pour des applications logiques et analogiques à l’aide d’un modèle de transport quasi-balistique.Nous avons ensuite étudié plus en détails les performances des MOSFET III-V en régimes statiques et dynamiques sous faible VDD, à l’aide du simulateur particulaire MONACO de type Monte Carlo. Les caractéristiques de quatre topologies de MOSFET ont été quantitativement étudiées, en termes de transport quasi-balistique, de courants statiques aux états passants et bloqués, de rendement fréquence/consommation et de bruit. Nous en tirons des conclusions sur l’optimisation de ces dispositifs. Enfin, l'étude comparative avec un FET à base de Si démontre clairement le potentiel des MOSFET III-V pour les applications à haute fréquence, à faible puissance de consommation et à faible bruit. / The optimal frequency performance/power-consumption trade-off is very difficult to achieve using CMOS technology because of low Si carrier mobility and relatively large supply voltage (VDD) required for circuit operation. The main objective of this work is to theoretically explore, in terms of operation frequency and power consumption, the potentialities of nano-MOSFET based on III-V materials with low energy bandgap and high electron mobility.First, this work analyzes theoretically the operation of a III-V MOS capacitor using self-consistent solution of Poisson - Schrödinger system equation. We can thus understand how and why the interface trap state densities at high-k/III-V interfaces degrade the intrinsic characteristics. For a 2D geometry, the performance of devices is estimated for digital and analog applications using a model of quasi-ballistic transport.Then, we estimated the performance of III-V MOSFET in static and dynamic regimes under low VDD, using MONACO a Monte Carlo simulator. The characteristics of four designs of III-V MOSFET have been studied quantitatively in terms of quasi-ballistic transport, DC current in ON and OFF states, frequency/consumption efficiency and optimum matching conditions of noise. We provide the guideline on the design optimization of the devices.Finally, the comparative study with Si-based devices clearly demonstrates the potentiality of III-V nano-MOSFET architectures for high-frequency and low-noise application under low operating power and even for low voltage logic.

No description available.

The continuous migration to smaller feature sizes puts high demands on materials and technologies for future ultra-large-scale integrated circuits. Particularly, the copper-based interconnect system will reach fundamental limits soon. Their outstanding properties make metallic carbon nanotubes (CNTs) an ideal material to partially replace copper in future interconnect architectures. Here, a low contact resistance to existing metal lines is crucial. The present thesis contributes to the theory and numerical description of electronic transport in metallic CNTs with metal contacts. Different theoretical approaches are applied to various contact models and electrode materials (Al, Cu, Pd, Ag, Pt, Au) are compared. Ballistic transport calculations are based on the non-equilibrium Greens function formalism combined with tight-binding (TB), extended Hückel theory (EHT) and density functional theory (DFT). Simplified contact models allow a qualitative investigation of both the influence of geometry and CNT length, and the strength and extent of the contact on the transport properties. In addition, such simple contact models are used to compare the influence of different electronic structure methods on transport. It is found that the semiempirical TB and EHT are inadequate to quantitatively reproduce the DFT-based results. Based on this observation, an improved set of Hückel parameters is developed, which remedies this insufficiency. A systematic investigation of different contact materials is carried out using well defined atomistic metal-CNT-metal structures, optimized in a systematic way. Analytical models for the CNT-metal interaction are proposed. Based on that, electronic transport calculations are carried out, which can be extended to large systems by applying the computationally cheap improved EHT. The metal-CNT-metal systems can then be ranked by average conductance: Ag ≤ Au < Cu < Pt ≤ Pd < Al. This corresponds qualitatively with calculated contact distances, binding energies and work functions of CNTs and metals. To gain a deeper understanding of the transport properties, the electronic structure of the metal-CNT-metal systems and their respective parts is analyzed in detail. Here, the energy resolved local density of states is a valuable tool to investigate the CNT-metal interaction and its influences on the transport. / Die kontinuierliche Verkleinerung der Strukturgrößen stellt hohe Anforderungen an Materialen und Technologien zukünftiger hochintegrierter Schaltkreise. Insbesondere die Leistungsfähigkeit kupferbasierte Leitbahnsystem wird bald an fundamentale Grenzen stoßen. Aufgrund ihrer hervorragenden Eigenschaften könnten metallische Kohlenstoffnanoröhren (engl. Carbon Nanotubes, CNTs) Kupfer in zukünftigen Leitbahnsystemen teilweise ersetzen. Dabei ist ein geringer Kontaktwiderstand mit vorhandenen Leitbahnen von entscheidender Bedeutung. Die vorliegende Arbeit liefert grundlegende Beiträge zur Theorie und zur numerischen Beschreibung elektronischer Transporteigenschaften metallischer CNTs mit Metallkontakten. Dazu werden verschiedene theoretische Ansätze auf diverse Kontaktmodelle angewandt und eine Auswahl von Elektrodenmaterialen (Al, Cu, Pd, Ag, Pt, Au) verglichen. Die Beschreibung ballistischen Elektronentransports erfolgt mittels des Formalismus der Nichtgleichgewichts-Green-Funktionen in Kombination mit Tight-Binding (TB), erweiterter Hückel-Theorie (EHT) und Dichtefunktionaltheorie (DFT). Vereinfachte Kontaktmodelle dienen der qualitativen Untersuchung des Einflusses von Geometrie und Länge der Nanoröhren, sowie von Stärke und Ausdehnung des Kontaktes. Darüber hinaus erlauben solch einfache Modelle mit geringem numerischen Aufwand den Einfluss verschiedener Elektronenstrukturmethoden zu untersuchen. Es zeigt sich, dass die semiempirischen Methoden TB und EHT nicht in der Lage sind die Ergebnisse der DFT quantitativ zu reproduzieren. Ausgehend von diesen Ergebnissen wird ein verbesserter Satz von Hückel-Parametern generiert, der diesen Mangel behebt. Die Untersuchung verschiedener Kontaktmaterialien erfolgt an wohldefinierten atomistischen Metall-CNT-Metall-Strukturen, welche systematisch optimiert werden. Analytische Modelle zur Beschreibung der CNT-Metall-Wechselwirkung werden vorgeschlagen. Darauf aufbauende Berechnungen der elektronischen Transporteigenschaften, können mit Hilfe der verbesserten EHT auf große Systeme ausgedehnt werden. Die Ergebnisse ermöglichen eine Reihung der Metall-CNT-Metall-Systeme hinsichtlich ihrer Leitfähigkeit: Ag ≤ Au < Cu < Pt ≤ Pd < Al. Dies korrespondiert qualitativ mit berechneten Kontaktabständen, Bindungsenergien und Austrittarbeiten der CNTs und Metalle. Zum tieferen Verständnis der Transporteigenschaften erfolgt eine detaillierte Analyse der elektronischen Struktur der Metall-CNT-Metall-Systeme und ihrer Teilsysteme. Dabei erweist sich die energieaufgelöste lokale Zustandsdichte als nützliches Werkzeug zur Visulisierung und zur Charakterisierung der Wechselwirkung zwischen CNT und Metall sowie deren Einfluss auf den Transport.