Un-doped, Tb3+ as well as Yb3+ doped ZnO nanocrystals with different concentrations of RE3+ (Tb3+, Yb3+) ions were successfully synthesized via sol-gel method to produce rare earth activated zinc oxide nanophosphors. The phosphor powders were produced by drying the precursor gels at 200˚C in ambient air. Based on the X-ray diffraction results, it was found that the pure and RE3+ doped ZnO nanophosphors were highly polycrystalline in nature regardless of the incorporation of Tb3+ or Yb3+ ions. Moreover, the diffraction patterns were all indexed to the ZnO Hexagonal wurtzite structure and belong to P63mc symmetry group. The Raman spectroscopy confirmed the wurtzitic structure of the prepared samples. Elemental mapping conducted on the as prepared samples using Scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrometer (EDX) revealed homogeneous distribution of Zn, O, and RE3+ ions. The high resolution transmission electron microscope (HR-TEM) analyses indicated that the un-doped and RE3+ doped samples were composed of hexagonal homogeneously dispersed particles of high crystallinity with an average size ranging from 4 to 7 nm in diameter, which was in agreement with X-ray diffraction (XRD) analyses. ZnO:Tb3+ PL study showed that among different Tb3+ concentrations, 0.5 mol% Tb3+ doped ZnO nanoparticles showed clear emission from the dopant originating from the 4f-4f intra-ionic transitions of Tb3+ while the broad defects emission was dominating in the 0.15 and 1 mol% Tb3+doped ZnO. Optical band-gap was extrapolated from the Ultraviolet Visible spectroscopy (UV-Vis) absorption spectra using TAUC‟s method and the widening of the optical band-gap for the doped samples as compared to the un-doped sample was observed. The PL study of ZnO:Yb3+ samples was studied using a 325 nm He-Cd laser line. It was observed that the ZnO exciton peak was enhanced as Yb3+ions were incorporated in ZnO matrix. Furthermore, UV-VIS absorption spectroscopic study revealed the widening of the band-gap in Tb3+ doped ZnO and a narrowing in the case of Yb3+ doped ZnO system. X-ray photoelectron spectroscopy demonstrated that the dopant was present in the doped samples and the result was found to be consistent with PL data from which an energy transfer was evidenced. Energy transfer mechanism was evidenced between RE3+ and ZnO nanocrystals and was discussed in detail. / Physics / M.Sc. (Physics)

The field of organic semiconductors considerably gained research interest due to promising applications in flexible, large-area, lightweight and semitransparent electronic devices, such as light-emitting diodes, solar cells, or transistors. The working mechanism of such devices depends on the combination of different neat or blended organic films, whose physical properties substantially differ from those of inorganic semiconductors. Weak intermolecular electronic coupling and large energetic disorder result in a thermally activated charge carrier hopping between localized electronic states. Therefore, many processes in organic devices are determined by properties of single molecules. The major goal of this thesis is to disclose relationships between electronic properties of organic thin films and molecular parameters, helping to provide specific design rules for new molecules. In the first part of this thesis, the impact of molecular quadrupole moments on the transport energies of charge carriers is investigated by photoelectron spectroscopy. The results reveal for a variety of planar small molecules that charge-quadrupole interactions along the pi-pi-stacking geometry induce large energy changes with molecular orientation at surfaces and interfaces of crystalline films. Furthermore, these electrostatic interactions enable a continuous tuning of energy levels in crystalline intermixed blends by more than 1 eV. In blends exhibiting separated phases, quadrupole moments induce electrostatic gradients from the interface to the bulk phase. These two effects are exploited in organic solar cells consisting of a ternary blend of two intermixed donors blended with one acceptor. By changing the mixing ratio of the two donors, the open-circuit voltage can be continuously tuned. Additionally, the dissociation barrier of electron-hole pairs at the interface can be varied, reflecting in a change in photocurrent. In the second part, molecular n-doping is investigated, facing the particular issue of air sensitivity. The analysis of two air stable precursor molecules of n-dopants reveals very good doping properties after their thermal evaporation, partly even better than for a reference air sensitive dopant. For high doping concentrations, temperature-dependent conductivity measurements show that the thermal activation energy of many compounds can be described by an empirical function of two molecular parameters, the relaxation energy of matrix anions and the Coulomb binding energy of integer charge transfer complexes (ICTCs) between matrix anions and dopant cations. The investigation of the density of states indicates that charge transport at high doping concentrations predominantly occurs by a rearrangement between different ICTC configurations and is limited by their energetic disorder, which can be reduced substantially by adding electron withdrawing side groups to the matrix molecules. The exposure of several n-doped semiconductors to air reveals that the air stability increases with larger ionization energies of ICTCs. This effect is attributed to an universal trap introduced upon air exposure. Its energy is estimated to be 3.9 eV, setting a general limit for air stable n-doping. / Organische Halbleiter bieten vielversprechende Anwendungsmöglichkeiten in ultraleichten, flexiblen, großflächigen und semitransparenten elektronischen Bauteilen wie beispielsweise in Leuchtdioden, Solarzellen oder Transistoren. Die Funktionsweise solcher Bauteile basiert auf der Kombination verschiedener organischer Moleküle in dünnen Schichten, deren physikalische Eigenschaften sich stark von herkömmlichen anorganischen Halbleitern unterscheiden. Die schwache elektronische Kopplung zwischen einzelnen Molekülen und die große energetische Unordnung in organischen Halbleitern bewirken einen temperaturaktivierten Transport von Ladungsträgern zwischen lokalisierten elektronischen Zuständen. Daher werden viele Prozesse in organischen Halbleiterbauelementen von molekularen Eigenschaften bestimmt. Das Hauptziel dieser Dissertation ist es, verschiedene elektronische Eigenschaften dünner organischer Filme mit molekularen Parametern in Verbindung zu bringen, was als Grundlage für die gezielte Entwicklung neuer Moleküle dienen soll. Im ersten Teil dieser Arbeit wird mittels Photoelektronenspektroskopie der Einfluss molekularer Quadrupolmomente auf die Transportenergien von Ladungsträgern untersucht. Für eine große Anzahl verschiedener planarer Moleküle zeigt sich, dass die Wechselwirkung von Ladungen mit Quadrupolmomenten entlang der pi-pi-Stapelrichtung große Veränderungen der Energieniveaus an der Oberfläche und der Grenzfläche von kristallinen Filmen bewirkt, beispielsweise wenn sich die Molekülorientierung ändert. Dieser elektrostatische Effekt ermöglicht es, die Energieniveaus in einer homogen durchmischten Schicht zweier Molekülarten kontinuierlich über eine Größenordnung von mehr als 1 eV durchzustimmen. In Mischungen mit einer Phasentrennung können molekulare Quadrupolmomente einen elektrostatischen Gradienten an der Grenzfläche zwischen den Phasen ausbilden. Diese beiden Effekte werden in Solarzellen ausgenutzt, die aus einer Mischung von zwei Donatormolekülen und einem Akzeptormolekül bestehen. Durch Variation des Mischverhältnisses der zwei Donatoren lässt sich die Leerlaufspannung kontunierlich anpassen. Zusätzlich lässt sich die Energiebarriere für die Ladungsträgertrennung an der Grenzfläche reduzieren, was zu einem höheren Photostrom führt. Im zweiten Teil wird molekulare n-Dotierung untersucht, bei der das spezielle Problem der Luftsensitivität berücksichtigt werden muss. Zwei luftstabile Ausgangsmoleküle von n-Dotanden weisen nach ihrer thermischen Verdampfung sehr gute Dotiereigenschaften auf, welche für ein Molekül sogar besser als bei entsprechenden luftsensitiven Referenzdotanden sind. Temperaturabhängige Leitfähigkeitsmessungen zeigen, dass die thermische Aktivierungsenergie bei hohen Dotierkonzentrationen durch eine empirische Funktion von zwei molekularen Parametern beschrieben werden kann, welche die Relaxationsenergie von Anionen des Matrixmoleküls und die Coulombbindungsenergie des Ionenpaars aus Matrix- und Dotandenmolekül sind. Die Untersuchung der Zustandsdichte dieser hochdotierten Halbleiter deutet darauf hin, dass sich der Ladungstransport durch eine Umbesetzung dieser Ionenpaare beschreiben lässt. Der Transport ist dabei durch die energetische Unordnung der Ionenpaare limitiert, welche sich allerdings durch das Hinzufügen von elektronenziehenden Seitengruppen an die Matrixmoleküle deutlich reduzieren lässt. Der Kontakt verschiedener n-dotierter Halbleiter mit Luft zeigt, dass sich die Luftstabilität dieser mit größerer Ionisationsenergie der Anionen des Matrixmaterials verbessert. Diese Beobachtung wird dadurch erklärt, dass durch den Kontakt mit Luft ein universeller Fallenzustand mit der Energie von 3.9 eV entsteht. Dieser setzt eine allgemeine Grenze für luftstabile n-Dotierung.

Complex oxides are an intriguing field of solid-state research, as they can exhibit a wide variety of functional properties, such as ferroelasticity, ferroelectricity, ferro- and antiferromagnetism or an even more complicated type of magnetic ordering, the combination or interaction of those ferroic properties (multiferroicity), high spin polarization, or high-temperature superconductivity. Thus they are prospective candidates for future materials in microelectronics. It is a matter of fact that the performance of such oxide-based devices depends mainly on transport properties, which in turn depend on the distribution and density of intrinsic or extrinsic electronic interface states across the device structure. The present thesis focuses on the identification and characterization of such electronic properties by two different photoassisted spectroscopy techniques: surface photovoltage spectroscopy and photoelectron spectroscopy. This work especially deals with perovskite oxides, namely with the model perovskite strontium titanate (SrTiO3) as a substrate and three differently doped lanthanum manganite thin films (10-15 nm thickness) grown by pulsed laser deposition (PLD) on the SrTiO3 substrate(La0.7Sr0.3MnO3, La0.7Ca0.3MnO3, La0.7Ce0.3MnO3). The first part aims at the identification of electronic surface and interface states at the free SrTiO3 surface as well as at the three different lanthanum manganite/SrTiO3 interfaces. For that purpose three different experimental realizations of the surface photovoltage spectroscopy technique were implemented and employed: photoelectron spectroscopy under additional optical excitation, the capacitive detection of the photoinduced displacement current in a parallel-plate capacitor geometry under modulated optical excitation, and the classical Kelvin probe technique. The methods are evaluated comparatively with respect to their suitability to analyze the given oxidic interfaces. The main result of this first part is a map of the energetic positions and relaxation time constants of the surface states at the SrTiO3 surface as well as of the interface states at the lanthanum manganite/SrTiO3 interfaces within the SrTiO3 bandgap. The interface states were classified into film- and substrate-induced states and it could be demonstrated that an appropriate annealing procedure can dramatically decrease their densities. The second part tackles the problem of the manganese valence and the doping type of di- and tetravalent-ion-doped LaMnO3. The question whether the insulating parent compound LaMnO3 becomes an electron-doped semiconductor after doping with tetravalent cations such as Ce4+ - which would be in analogy to the well-established hole doping after partial substitution of La3+ by divalent cations such as Sr2+ or Ca2+ - has been discussed controversially in the literature so far. Due to the physics of the manganite crystal lattice the question can also be formulated in a different way: Can part of the manganese ions be driven from the Mn3+ state towards the Mn2+ state without any crystal instabilities or phase separation phenomena? In order to contribute to the clarification of this question, an extensive X-ray- and UV-photoelectron spectroscopy (XPS/UPS) investigation was performed. The three differently doped lanthanum manganite thin films were comparatively studied considering the exchange splitting of the Mn 3s core level line, which is a linear function of the Mn valence, as measured by XPS and the work function as extracted from UPS. All measurements were performed at different states of deoxygenation after heating in ultrahigh vacuum and reoxidation after heating in a pure oxygen atmosphere. Strong evidence for electron doping of the La0.7Ce0.3MnO3 film after deoxygenation was found. Furthermore, the reversible tunability of the Mn valence by variation of the oxygen content could be demonstrated for both tetravalent- and divalent-ion-doped lanthanum manganite films. / Oxidische Komplexverbindungen können eine Vielzahl an funktionellen Eigenschaften, wie z.B. Ferroelastizität, Ferroelektrizität, Ferro- und Antiferromagnetismus sowie kompliziertere magnetische Ordnungen, die Kombination und Interaktion solcher ferroischer Eigenschaften (Multiferroizität), hohe Spinpolarisation oder Hochtemperatursupraleitung aufweisen und gelten daher als aussichtsreiche Materialien für die zukünftige Mikroelektronik. Entscheidend für die Funktionsfähigkeit oxidischer Bauelemente sind deren elektronische Transporteigenschaften, die in äußerst sensibler Weise von der Verteilung und Dichte von ex- oder intrinsischen elektronischen Defektzuständen an Grenz- und Oberflächen innerhalb der Bauelementstruktur abhängen. Die vorliegende Arbeit beschäftigt sich mit der Spektroskopie solcher elektronischer Eigenschaften mittels photonenbasierter Methoden. Im Fokus stehen dabei perowskitische Oxide , speziell das Modellperowskit Strontiumtitanat (SrTiO3) als Substrat und darauf mittels gepulster Laserdeposition (PLD) abgeschiedene dünne Filme (10-15 nm Dicke) dotierter Lanthanmanganate (La0.7Sr0.3MnO, La0.7Ca0.3MnO3, La0.7Ce0.3MnO3). Im Rahmen einer halbleiterphysikalischen Interpretation widmet sich der erste Teilder Identifikation elektronischer Ober- und Grenzflächenzustände an der SrTiO3-Oberfläche sowie an verschiedenen Lanthanmanganat/SrTiO3-Grenzflächen mittels dreier unterschiedlicher experimenteller Methoden zur Vermessung der Oberflächenphotospannung: der Photoelektronenspektroskopie unter zusätzlicher optischer Anregung, einer kapazitiven Detektionsmethode in Plattenkondensatorgeometrie unter modulierter optischer Anregung und der optischen Kelvin-Sonde. Neben einem auf die bei oxidischen Ober- und Grenzflächen auftretenden besonderen Herausforderungen zugeschnittenen Methodenvergleich werden Grenzflächenzustände bezüglich ihrer energetischen Position in der Bandlücke des SrTiO3 und ihres Relaxationsverhaltens analysiert, als substrat- oder filminduziert klassifiziert, und die Verringerung ihrer Dichte nach geeigneter Ausheilprozedur wird nachgewiesen. Der zweite Teil der Arbeit befasst sich mit der in der Literatur bisher kontrovers diskutierten Frage, ob sich die isolierende Stammverbindung LaMnO3 durch Dotierung mit tetravalenten Kationen, wie z.B. Ce4+, in einen elektronendotierten Halbleiter verwandeln lässt - analog zur Herstellung lochdotierter Lanthanmanganate durch Dotierung mit divalenten Kationen, wie z.B. Sr2+ oder Ca2+. Die Frage ist äquivalent zur Betrachtung, ob unter Beibehaltung der Stabilität des Kristallgitters ein Teil der Manganionen vom Mn3+-Zustand in den Mn2+-Zustand übergehen kann. Um einen Beitrag zur Klärung dieses Problems zu leisten, wurden als elektronisch sensitive Methoden die Röntgen- und UV-Photoelektronenspektroskopie (XPS/UPS) gewählt. Die oben genannten Lanthanmanganatfilme wurden dazu hinsichtlich der Austauschaufspaltung der Mangan-3s-Linie im XP-Spektrum, die in linearer Weise von der Manganvalenz abhängt, und der anhand der Breite des UP-Spektrums ermittelten Austrittsarbeit jeweils nach Reinigung der Oberfläche im Ultrahochvakuum (UHV) vergleichend untersucht. Die Messungen wurden nach unterschiedlich starker Desoxidation durch Heizen im UHV und Reoxidierung durch Heizen in Sauerstoffatmosphäre durchgeführt. Es konnte nachgewiesen werden, dass eine Elektronendotierung des La0.7Ce0.3MnO3-Films bei geeigneter Einstellung des Sauerstoffgehalts tatsächlich möglich ist. Außerdem wurde gezeigt, dass sich sowohl in di- als auch in tetravalent dotierten Lanthanmanganatfilmen die Manganvalenz und damit der Dotierungstyp reversibel durchstimmen lässt.

No description available.

Molecular doping is a key technique for realizing high efficient organic light-emitting diodes (OLEDs) and photovoltaics (OPV). Furthermore, its most recent application in organic field-effect transistors (OFETs) marks a milestone on the roadmap towards flexible organic CMOS technology. However, in contrast to silicon based devices, the understanding of the fundamental processes of molecular doping is still controversially discussed. This work aims at the detailed analysis of the molecular doping process by employing Photoelectron spectroscopy (PES) on various doped thin-films prepared by co-evaporation in vacuum. Here, the focus is on explanation of the experimental findings by a statistical description in order to contribute to the fundamental understanding of the doping mechanism. First, the Fermi level shifts in thin-films of the common hole transport materials MeO-TPD, ZnPc, and pentacene p-doped by the acceptors C60F36 and F6-TCNNQ are studied. The precise control of molar doping ratios as low as 1e−5 is demonstrated, allowing analysis of the doping properties in a much broader range as previously accessible. Characteristic kinks and slopes in the Fermi level vs. doping concentration diagrams are found. Furthermore, the doping efficiency is found to decrease with increasing doping concentrations to just a few percent at molar ratios above 0.1. By numerically solving the charge neutrality equation using a classical semiconductor physics approach, these findings are explained by trap-limitation, dopant saturation, and reserve regimes as known from inorganic semiconductor physics. Using the example of p-doped MeO-TPD thin-films, it is finally demonstrated that the density of deep gap states depends on the purity degree of the host material. Similar studies are conducted on thin-films of C60, ZnPc, and pentacene n-doped by the di-metal complex W2(hpp)4. The corresponding Fermi level plots possess also host material specific kinks and slopes, which however, can be explained by application of the statistical doping description and assuming just dopant saturation and trap-limitation. Furthermore, it is demonstrated that electron traps with defined density can intentionally be introduced in pentacene by co-evaporation of C60 and gradually filled-up by n-doping with W2(hpp)4. In contrast to p-dopants, the highly efficient n-dopant W2(hpp)4 is prone to degradation in air due to its low IP of just 2.4eV. Therefore, the degradation of pure films of W2(hpp)4 as well as of n-doped films applying various host materials is studied under air exposure by conductivity measurements and PES. An unexpected (partial) passivation of W2(hpp)4 molecules against oxidation is found, however, this effect is identified to depend on the energy levels of the used host material. This finding is explained by a down-shift of the W2(hpp)4 energy levels upon charge transfer to a host material with deeper lying energy levels and thus allows for new conclusions on the relative alignment of the energy levels of dopant and host molecules in doped films in general. The maximum open-circuit voltage Voc of BHJ solar cells is limited by the effective HOMO(donor)-LUMO(acceptor) gap of the photo-active absorber blend. Therefore, the relative energy levels within ZnPc:C60 blend layers are furthermore investigated by PES, identifying an increase of the HOMO(ZnPc)-LUMO(C60) gap by 0.25 eV when varying the blend stoichiometry from 6:1 to 1:6. The trend in this gap correlates with observed changes in Voc of respective BHJ solar cells as well as with measured charge transfer energies. As physical origins for the changed energy levels, a suppressed crystallization of the C60 phase due to presence of donor molecules as well as concentration-dependent growth modes of the ZnPc phase are discussed.

Hybride anorganische/organische Systeme (HIOS) sind von großem Interesse für Grundlagenforschung und neue (opto)-elektronische Bauteile. Um effiziente Bauteile zu entwickeln, ist ein Verständnis der Energielevelanordnung (ELA) an der Grenzfläche von entscheidender Bedeutung. Es wird demonstriert, wie Oberflächen mit heterogener Austrittsarbeit die Resultate von ultravioletter Photoelektronenspektroskopie (UPS) beeinflussen. Durch den Vergleich experimenteller Daten mit Berechnungen zeigt sich, dass das lokale elektrostatische Potential oberhalb der Oberfläche zur Ausbildung einer zusätzlichen Energiebarriere für Elektronen über Bereichen mit niedriger Austrittsarbeit führt, was die gemessene Sekundärelektronenkante zu höheren kinetischen Energien verschiebt. Der Einfluss von Streifengröße und experimentellen Parametern wird theoretisch und experimentell gezeigt. Im zweiten Teil dieser Arbeit wird gezeigt, wie man dünne organische Donator/Akzeptor Zwischenschichten nutzen kann, um die ELA zwischen typischen anorganischen und organischen Halbleitern zu kontrollieren. Die Austrittsarbeit von anorganischen Substraten lässt sich so zwischen 2.2-6.0 eV variieren. Der Einfluss von Zuständen in der Bandlücke des anorganischen Halbleiters auf die Bandverbiegung wird im Detail untersucht und es wird ein Model vorgeschlagen, welches das Pinning des Fermi-Niveaus an diesen Zuständen beschreibt. Es wird experimentell gezeigt, dass die Dotierung des anorganischen Halbleiters kaum Einfluss auf die ELA hat. Weiterhin wird die ELA zwischen dem Übergangsmetall-Dichalcogenid WSe2 und dem organischen Akzeptor C60F48 untersucht. Mit Hilfe von STM und STS Messungen wurde gezeigt, dass C60F48 geschlossene Domänen auf WSe2 bei Bedeckung mit Submonolagen bildet und dass sich die Energielevel von WSe2 drastisch ändern. Durch Auswerten der Potentialänderung als Funktion des Abstandes von einer C60F48 Kante im STS konnte die Thomas-Fermi-Abschirmlänge von WSe2 auf etwa 2 nm bestimmt werden. / Hybrid inorganic/organic systems (HIOS) have attracted a lot of interest for fundamental studies and novel (opto)-electronic devices during the past decade. For developing efficient devices, an understanding and control of the energy level alignment (ELA) at the hybrid interface is of paramount importance. Firstly, it is demonstrated how surfaces with non-uniform local work function influence the measurement results obtained by ultraviolet photoelectron spectroscopy (UPS). By comparing the measured results with calculations, it is found that the electrostatic potential above the surface leads to an additional energy barrier for electrons above low work function areas, shifting the secondary electron cut-off (SECO) to higher kinetic energies in UPS (averaging effect). The influence of pattern size and measurement conditions on the SECO is shown theoretically and experimentally. In the second part it is shown how thin organic donor/acceptor interlayers can be employed to manipulate the ELA between prototypical inorganic and organic semiconductors. The work function of the inorganic substrate can be tuned between 2.2-6.0 eV. The influence of gap states within the inorganic band gap on the band bending change is investigated in detail and a model is proposed, which describes the pinning of the inorganic energy levels as a function of surface state density. It is further shown experimentally that the bulk doping concentration of the inorganic semiconductor has only little effect on the energetic alignment. Finally, the ELA of the transition metal dichalcogenide monolayer WSe2 with the organic acceptor molecule C60F48 is investigated. Using STM and STS measurements, it is revealed that the C60F48 forms domains on WSe2 in the sub-monolayer regime. By evaluating the potential change as a function of distance from a C60F48 edge in STS, it is possible to derive a value for the Thomas-Fermi screening length of WSe2 of about 2 nm.

Heteroübergänge, die aus (in)organischen/(in)organischen Materialien bestehen, spielen eine entscheidende Rolle für die Leistung optoelektronischer Bauteile. Der Schwerpunkt dieser Arbeit liegt hauptsächlich auf der elektronischen Struktur dieser Heteroübergänge, insbesondere der Ausrichtung der Energieniveaus (ELA) an verschiedenen Heteroübergangsschnittstellen, die mit Photoelektronenspektroskopie gemessen wird. Zusätzlich wird die Geräteleistungen mit den PES-Ergebnissen verglichen, um weitere Verbesserung zu ermöglichen. MoOx/n-Si und PEDOT:PSS/n-Si Heteroverbindungen sind aktive Schichten von Solarzellen und mit PES kann direkt, die Groessen der Bandverbiegung auf der n-Si-Seite gemessen werden. Obwohl die Bandverbiegung für einen MoOx/n-Si-Heteroübergang (0,80 eV) größer ist als die von PEDOT:PSS/n-Si (0,71 eV), weisen die entsprechenden Solarzellen (MoOx/n-Si) aufgrund der mangelhaften Passivierung von n-Si und der geringeren Dünnschichtleitfähigkeit von MoOx einen schlechteren Wirkungsgrad (auf. Die Untersuchung der elektronischen Struktur Duenner Schichten aus Perowskit (CH3NH3PbI3) oder Vanadiumdioxid zeigt, dass die Austrittsarbeit durch die Oberflächenkomponenten dramatisch beeinflusst werden kann, wodurch die ELA mit dem prototypischen organischen Lochtransportmaterial N,N′-di(1-naphthyl)-N,N′-diphenylbenzidin (NPB) variiert wird. Bei den CH3NH3PbI3-Dünnschichten, die mit verschiedenen Methoden hergestellt werden, korreliert das Verhältnis der beiden Kohlenstoffarten auf der Oberfläche mit der Variation der Austrittsarbeit. Wie bei der VO2-Oberfläche kann die Austrittsarbeit durch Ändern des Verhältnisses von Sauerstoff und Vanadium auf der Oberfläche von 4,4 eV auf 6,7 eV abgestimmt werden. Belege für eine starke Ferminiveau-Pinning und die damit verbundene Energieniveaubiegung in NPB finden sich für stöchiometrisches VO2 (WF=6,7 eV), wodurch ein ohmscher Kontakt für Löcher entsteht, der als Lochinjektionskontakt in Bauteilen verwendet werden kann. / Heterojunctions, comprised by (in)organic/(in)organic materials, play a crucial role in determining the performance of optoelectronic devices. The focus of this work is mainly on the electronic structure of heterojunctions present in the optoelectronic devices, in particular the energy level alignment (ELA) at different heterojunction interfaces, by employing photoelectron spectroscopy (PES). Furthermore, interface energetics are correlated with the device performances in order to guide the future improvement. MoOx/n-Si and PEDOT:PSS/n-Si heterojunctions are active layers in solar cells and PES measurements give direct band bending magnitudes generated at the n-Si. Even though the band bending magnitude of the MoOx/n-Si heterojunction (0.80 eV) is larger than that of the PEDOT:PSS/n-Si (0.71 eV), the corresponding solar cells (MoOx/n-Si) show inferior power conversion efficiency (PCE), due to the deficient passivation of n-Si and lower thin film conductivity of MoOx. The investigations of electronic structure of perovskite (CH3NH3PbI3) and vanadium dioxide (VO2) thin films show that the work function can be dramatically affected by the surface components, which subsequently varies the ELA with the deposited prototypical organic hole transport material N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine (NPB). As for the CH3NH3PbI3 thin films fabricated by different methods, the ratio of the two C 1s species (CH3NH3+ and CH3+) on the surface correlates with variation of the work function. As for the VO2 thin film, the work function can be tuned from 4.4 eV to 6.7 eV by changing the ratio of oxygen and vanadium on the surface. Evidence for strong Fermi-level pinning and the associated energy-level bending in NPB is found for the clean and stoichiometric VO2 (WF=6.7 eV), rendering an Ohmic contact for holes, which can be utilized as a hole injection contact into the devices.

The production of higher alcohols from synthesis gas over Cu-Co-Cr-K catalysts has been studied. The production rate of alcohol was measured in the flow reactor, operating at 250 to 350°C, 3500 to 8000 gas hourly space velocity, and 900 to 1800 psig. The productivity as a function of temperature, pressure, gas hourly space velocity, carbon dioxide content of the feed, and reaction time was also examined. Physisorption data have been analyzed using the Langmuir model, the Brunauer-Emmett-Teller (BET) method, the Barret-Joyner-Halenda (BJH) method, and the de Boer and Halsey t-method. The surface areas of catalysts CB1(1), CB1(3), and CB1(1) after reaction were 39.9 ± .9 m2/g, 28.9 ± 1.7 m2/g, and 26.5 ± 0.3 m2/g, respectively. Moreover, information such as pore size distribution, pore shape, monolayer volume, micropore volume and thickness of adsorption layer were also obtained. The atomic concentration and oxidation states of near surface species were established by X-ray Photoelectron Spectroscopy.

My dissertation is primarily divided into two parts. The first deals with the preparation, functionalization, and characterization of carbon surfaces prepared by direct current magnetron sputtering (DCMS) and high power impulse magnetron sputtering (HiPIMS) as substrates for bioarrays. Part two discusses applications of XPS peak fitting in surface chemical analysis. Chapter 1, the introduction, includes (i) a discussion of the construction of bioarrays and the preparation of sputtered surfaces, e.g., by DCMS and HiPIMS, and also functionalization (bioconjugate) chemistry with special emphasis on the importance of covalent functionalization of surfaces, and (ii) a discussion of the surface characterization techniques and accompanying analysis methods I have primarily used, which include X-ray photoelectron spectroscopy (XPS), near-ambient pressure XPS (NAP-XPS), XPS peak fitting, and contact angle goniometry (wetting). Chapter 2 discusses the preparation, characterization, and functionalization of DCMS and HiPIMS carbon surfaces for bioarrays. Here, two functionalization chemistries are explored, where the activity of DCMS and HiPIMS carbon towards amidation and amination is compared. Chapter 3 focuses on the use of Gaussian-Lorentzian sum (GLS) and Gaussian-Lorentzian product (GLP) line shapes in the context of peak fitting XPS narrow scans. This discussion includes a comparison of the GLS and GLP line shapes with the Voigt function. Chapters 4 and 5 discuss the applications of XPS peak fitting in materials characterization. Chapter 4 talks about XPS data analysis in the context of the chemical vapor deposition of various aminosilanes and their effect on peptide stability and purity. Chapters 5 describes the surface chemical analysis of various materials by NAP-XPS, including accompanying data analysis and/or peak fitting. The materials probed here cannot be analyzed at ultra-high vacuum by conventional XPS, hence, they are analyzed by NAP-XPS. Chapter 5 is divided into 5 sections. Section 5.1.1 discusses the characterization and analysis of a solution of bovine serum albumin (BSA) by peak fitting the C 1s and O 1s peak envelopes. Section 5.1.2 discusses the analysis of polytetrafluoroethylene (PTFE) at different pressures. Here, the effect of increasing background pressure and X-ray illumination time on the equivalent widths of the F 1s narrows scans is shown. Environmental charge compensation is also discussed here. Section 5.1.3 includes the analysis of poly(γ-benzyl L-glutamate) (PBLG), where the C 1s and O 1s peak envelopes were peak fitted to determine/confirm the structure and composition of this polymer. Section 5.1.4 contains an analysis and comparison of three different human hair samples: (i) untreated, (ii) colored, and (iii) bleached. Here, a comparison of the Si 2p, S 2p, and C 1s peaks illustrates the effects of the different treatments. Section 5.1.5 shows the characterization and analysis of liquid and solid phosphate buffered saline (PBS). Chapter 6 presents conclusion of my work and discusses future work.

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