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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
201

<b>A miniaturized potentiostat for electrochemical impedance spectroscopy</b>

Kevin Alessandro Bautista (18415374) 20 April 2024 (has links)
<p dir="ltr">Portable sensing enables an enhanced form of disease monitoring due to its accessible form-factors, low costs, and insights into user health, along with enhanced detection methods due to its many use cases for at-home or in-field applications. To that end, electrochemistry has been a widely used technique in characterization, detection, and diagnostics. Electrochemical Impedance Spectroscopy (EIS) is an electrochemical technique that enables electrode surface characterization through changes in impedance across a given frequency range making it sensitive to interactions at the electrode surface and enabling the detection and quantification of analytes. While EIS has been traditionally limited to benchtop potentiostats, advancements in integrated circuits (ICs) have since enabled the miniaturization of potentiostats for at-home or field applications. However, implementation of EIS in a portable format is still limited by discontinuous measurements, high cost, or designs not fit for portability. This work revolves around the development of a miniaturized potentiostat that can implement EIS to better accommodate the need for miniaturized sensing platforms. My design uses the AD5941 IC which is a single-chip potentiostat analog-front-end enabling a small form-factor that fits in the palm of the user’s hand. The device was able to characterize a resistor-capacitor circuit with errors as low as 0.33% and quantify the concentration of a redox active compound with a 6.2% error, providing agreeable results with a commercial benchtop potentiostat and demonstrating our device’s potential for diagnostic applications. Our working frequency range of 200 kHz – 0.15 Hz, coupled with high system configurability and a cost of $50 makes our device an accessible option for at-home and portable applications. Future work to implement truly wireless functionalities, such as WiFi or Bluetooth Low Energy, along with experimental testing of biological substances will create a truly robust platform for portable diagnostic and sensing applications.</p>
202

Towards the development of a reliable reconfigurable real-time operating system on FPGAs

Hong, Chuan January 2013 (has links)
In the last two decades, Field Programmable Gate Arrays (FPGAs) have been rapidly developed from simple “glue-logic” to a powerful platform capable of implementing a System on Chip (SoC). Modern FPGAs achieve not only the high performance compared with General Purpose Processors (GPPs), thanks to hardware parallelism and dedication, but also better programming flexibility, in comparison to Application Specific Integrated Circuits (ASICs). Moreover, the hardware programming flexibility of FPGAs is further harnessed for both performance and manipulability, which makes Dynamic Partial Reconfiguration (DPR) possible. DPR allows a part or parts of a circuit to be reconfigured at run-time, without interrupting the rest of the chip’s operation. As a result, hardware resources can be more efficiently exploited since the chip resources can be reused by swapping in or out hardware tasks to or from the chip in a time-multiplexed fashion. In addition, DPR improves fault tolerance against transient errors and permanent damage, such as Single Event Upsets (SEUs) can be mitigated by reconfiguring the FPGA to avoid error accumulation. Furthermore, power and heat can be reduced by removing finished or idle tasks from the chip. For all these reasons above, DPR has significantly promoted Reconfigurable Computing (RC) and has become a very hot topic. However, since hardware integration is increasing at an exponential rate, and applications are becoming more complex with the growth of user demands, highlevel application design and low-level hardware implementation are increasingly separated and layered. As a consequence, users can obtain little advantage from DPR without the support of system-level middleware. To bridge the gap between the high-level application and the low-level hardware implementation, this thesis presents the important contributions towards a Reliable, Reconfigurable and Real-Time Operating System (R3TOS), which facilitates the user exploitation of DPR from the application level, by managing the complex hardware in the background. In R3TOS, hardware tasks behave just like software tasks, which can be created, scheduled, and mapped to different computing resources on the fly. The novel contributions of this work are: 1) a novel implementation of an efficient task scheduler and allocator; 2) implementation of a novel real-time scheduling algorithm (FAEDF) and two efficacious allocating algorithms (EAC and EVC), which schedule tasks in real-time and circumvent emerging faults while maintaining more compact empty areas. 3) Design and implementation of a faulttolerant microprocessor by harnessing the existing FPGA resources, such as Error Correction Code (ECC) and configuration primitives. 4) A novel symmetric multiprocessing (SMP)-based architectures that supports shared memory programing interface. 5) Two demonstrations of the integrated system, including a) the K-Nearest Neighbour classifier, which is a non-parametric classification algorithm widely used in various fields of data mining; and b) pairwise sequence alignment, namely the Smith Waterman algorithm, used for identifying similarities between two biological sequences. R3TOS gives considerably higher flexibility to support scalable multi-user, multitasking applications, whereby resources can be dynamically managed in respect of user requirements and hardware availability. Benefiting from this, not only the hardware resources can be more efficiently used, but also the system performance can be significantly increased. Results show that the scheduling and allocating efficiencies have been improved up to 2x, and the overall system performance is further improved by ~2.5x. Future work includes the development of Network on Chip (NoC), which is expected to further increase the communication throughput; as well as the standardization and automation of our system design, which will be carried out in line with the enablement of other high-level synthesis tools, to allow application developers to benefit from the system in a more efficient manner.
203

3D high density memory based on emering resistive technologies : circuit and architecture design / Mémoires 3D haute densité à base de technologies résistives : architecture et circuit

Levisse, Alexandre 06 December 2017 (has links)
Alors que les mémoires non-volatiles conventionnelles, telles que les mémoires flash à grille flottante, deviennent de plus en plus complexes à intégrer et souffrent de performances et d’une fiabilité de plus en plus réduite, les mémoires à variation de résistance (RRAM) telles que les OxRAM, CBRAM, MRAM ou PCM sont vues dans la communauté scientifique comme une alternative crédible. Cependant, les architectures de RRAM standard (telles que la 1Transistor-1RRAM) ne sont pas compétitives avec les mémoires flash sur le terrain de la densité. Ainsi, cette thèse se propose d’explorer le potentiel des architectures RRAM sans transistor que sont l’architecture Crosspoint et l’architecture VRRAM.Dans un premier temps, le positionnement des architectures Crosspoint et VRRAM dans la hiérarchie mémoire est étudié. De nouvelles problématiques, telles que les courant de sneakpath, la chute de tension dans les métaux ou la surface des circuits périphériques sont identifiées et modélisées. Dans un second temps, des solutions circuit répondant aux problématiques évoquées précédemment sont proposées. Finalement, cette thèse se propose d’explorer les opportunités ouvertes par l’utilisation de transistors innovants pour améliorer la densité ou les performances des architectures mémoires utilisant des RRAM. / While conventional non-volatiles memories, such as floating gate Flash memories, are becoming more and more difficult and costly to integrate and suffer of reduced performances and reliability, emerging resistive switching memories (RRAM), such as OxRAM, CBRAM, MRAM or PCM, are seen in the scientific community as a good way for tomorrow’s high-density memories. However, standard RRAM architectures (such as 1 Transistor-1 RRAM) are not competitive with flash technology in terms of density. Thereby, this thesis proposes to explore the opportunities opened by transistor-less RRAM architectures: Crosspoint and Vertical RRAM (VRRAM) architectures.First, the positioning of Crosspoint and VRRAM architectures in the memory hierarchy is studied. New constraints such as the sneakpath currents, the voltage drop through the metal lines or the periphery area overhead are identified and modeled. In a second time, circuit solutions answering to previously mentioned effects are proposed. Finally, this thesis proposes to explore new opportunities opened by the use of innovative transistors to improve the density or the performances of RRAM-based memory architectures.
204

Investigations of time-interpolated single-slope analog-to-digital converters for CMOS image sensors

Levski, Deyan January 2018 (has links)
This thesis presents a study on solutions to high-speed analog-to-digital conversion in CMOS image sensors using time-interpolation methods. Data conversion is one of the few remaining speed bottlenecks in conventional 2D imagers. At the same time, as pixel dark current continues to improve, the resolution requirements on imaging data converters impose very high system-level design challenges. The focus of the presented investigations here is to shed light on methods in Time-to-Digital Converter interpolation of single-slope ADCs. By using high-factor time-interpolation, the resolution of single-slope converters can be increased without sacrificing conversion time or power. This work emphasizes on solutions for improvement of multiphase clock interpolation schemes, following an all-digital design paradigm. Presented is a digital calibration scheme which allows a complete elimination of analog clock generation blocks, such as PLL or DLL in Flash TDC-interpolated single-slope converters. To match the multiphase clocks in time-interpolated single-slope ADCs, the latter are generated by a conventional open-loop delay line. In order to correct the process voltage and temperature drift of the delay line, a digital backend calibration has been developed. It is also executed online, in-column, and at the end of each sample conversion. The introduced concept has been tested in silicon, and has showed promising results for its introduction in practical mass-production scenarios. Methods for reference voltage generation in single-slope ADCs have also been looked at. The origins of error and noise phenomenona, which occur during both the discrete and continuous-time conversion phases in a single-slope ADC have been mathematically formalized. A method for practical measurement of noise on the ramp reference voltage has also been presented. Multiphase clock interpolation schemes are difficult for implementation when high interpolation factors are used, due to their quadratic clock phase growth with resolution. To allow high interpolation factors a time-domain binary search concept with error calibration has been introduced. Although the study being conceptual, it shows promising results for highly efficient implementations, if a solution to stable column-level unit delays can be found. The latter is listed as a matter of future investigations.
205

Techniques for VLSI Circuit Optimization Considering Process Variations

Venkataraman, Mahalingam 23 March 2009 (has links)
Technology scaling has increased the transistor's susceptibility to process variations in nanometer very large scale integrated (VLSI) circuits. The effects of such variations are having a huge impact on performance and hence the timing yield of the integrated circuits. The circuit optimization objectives namely power, area, and delay are highly correlated and conflicting in nature. The inception of variations in process parameters have made their relationship intricate and more difficult to optimize. Traditional deterministic methods ignoring variation effects negatively impacts timing yield. A pessimistic worst case consideration of variations, on the other hand, can lead to severe over design. In this context, there is a strong need for re-invention of circuit optimization methods with a statistical perspective. In this dissertation, we model and develop novel variation aware solutions for circuit optimization methods such as gate sizing, timing based placement and buffer insertion. The uncertainty due to process variations is modeled using interval valued fuzzy numbers and a fuzzy programming based optimization is proposed to improve circuit yield without significant over design. In addition to the statistical optimization methods, we have proposed a novel technique that dynamically detects and creates the slack needed to accommodate the delay due to variations. The variation aware gate sizing technique is formulated as a fuzzy linear program and the uncertainty in delay due to process variations is modeled using fuzzy membership functions. The timing based placement technique, on the other hand, due to its quadratic dependence on wire length is modeled as nonlinear programming problem. The variations in timing based placement are modeled as fuzzy numbers in the fuzzy formulation and as chance constraints in the stochastic formulation. Further, we have proposed a piece-wise linear formulation for the variation aware buffer insertion and driver sizing (BIDS) problem. The BIDS problem is solved at the logic level, with look-up table based approximation of net lengths for early variation awareness.In the context of dynamic variation compensation, a delay detection circuit is used to identify the uncertainty in critical path delay. The delay detection circuit controls the instance of data capture in critical path memory flops to avoid a timing failure in the presence of variations. In summary, the various formulation and solution techniques developed in this dissertation achieve significantly better optimization compared to related works in the literature. The proposed methods have been rigorously tested on medium and large sized benchmarks to establish the validity and efficacy of the solution techniques.
206

Process Variability-Aware Performance Modeling In 65 nm CMOS

Harish, B P 12 1900 (has links)
With the continued and successful scaling of CMOS, process, voltage, and temperature (PVT), variations are increasing with each technology generation. The process variability impacts all design goals like performance, power budget and reliability of circuits significantly, resulting in yield loss. Hence, variability needs to be modeled and cancelled out by design techniques during the design phase itself. This thesis addresses the variability issues in 65 nm CMOS, across the domains of process technology, device physics and circuit design, with an eventual goal of accurate modeling and prediction of propagation delay and power dissipation. We have designed and optimized 65 nm gate length NMOS/PMOS devices to meet the specifications of the International Technology Roadmap for Semiconductors (ITRS), by two dimensional process and device simulation based design. Current design sign-off practices, which rely on corner case analysis to model process variations, are pessimistic and are becoming impractical for nanoscale technologies. To avoid substantial overdesign, we have proposed a generalized statistical framework for variability-aware circuit design, for timing sign-off and power budget analysis, based on standard cell characterization, through mixed-mode simulations. Two input NAND gate has been used as a library element. Second order statistical hybrid models have been proposed to relate gate delay, static leakage power and dynamic power directly in terms of the underlying process parameters, using statistical techniques of Design Of Experiments - Response Surface Methodology (DOE-RSM) and Least Squares Method (LSM). To extend this methodology for a generic technology library and for computational efficiency, analytical models have been proposed to relate gate delays to the device saturation current, static leakage power to device drain/gate resistance characterization and dynamic power to device CV-characterization. The hybrid models are derived based on mixed-mode simulated data, for accuracy and the analytical device characterization, for computational efficiency. It has been demonstrated that hybrid models based statistical design results in robust and reliable circuit design. This methodology is scalable to a large library of cells for statistical static timing analysis (SSTA) and statistical circuit simulation at the gate level for estimating delay, leakage power and dynamic power, in the presence of process variations. This methodology is useful in bridging the gap between the Technology CAD and Design CAD, through standard cell library characterization for delay, static leakage power and dynamic power, in the face of ever decreasing timing windows and power budgets. Finally, we have explored the gate-to-source/drain overlap length as a device design parameter for a robust variability-aware device structure and demonstrated the presence of trade-off between performance and variability, both at the device level and circuit level.
207

High speed power/area optimized multi-bit/cycle SAR ADCs

Wei, He Gong January 2011 (has links)
University of Macau / Faculty of Science and Technology / Department of Electrical and Electronics Engineering
208

An accurate, trimless, high PSRR, low-voltage, CMOS bandgap reference IC

Gupta, Vishal 05 July 2007 (has links)
Bandgap reference circuits are used in a host of analog, digital, and mixed-signal systems to establish an accurate voltage standard for the entire IC. The accuracy of the bandgap reference voltage under steady-state (dc) and transient (ac) conditions is critical to obtain high system performance. In this work, the impact of process, power-supply, load, and temperature variations and package stresses on the dc and ac accuracy of bandgap reference circuits has been analyzed. Based on this analysis, the a bandgap reference that 1. has high dc accuracy despite process and temperature variations and package stresses, without resorting to expensive trimming or noisy switching schemes, 2. has high dc and ac accuracy despite power-supply variations, without using large off-chip capacitors that increase bill-of-material costs, 3. has high dc and ac accuracy despite load variations, without resorting to error-inducing buffers, 4. is capable of producing a sub-bandgap reference voltage with a low power-supply, to enable it to operate in modern, battery-operated portable applications, 5. utilizes a standard CMOS process, to lower manufacturing costs, and 6. is integrated, to consume less board space has been proposed. The functionality of critical components of the system has been verified through prototypes after which the performance of the complete system has been evaluated by integrating all the individual components on an IC. The proposed CMOS bandgap reference can withstand 5mA of load variations while generating a reference voltage of 890mV that is accurate with respect to temperature to the first order. It exhibits a trimless, dc 3-sigma accuracy performance of 0.84% over a temperature range of -40°C to 125°C and has a worst case ac power-supply ripple rejection (PSRR) performance of 30dB up to 50MHz using 60pF of on-chip capacitance. All the proposed techniques lead to the development of a CMOS bandgap reference that meets the low-cost, high-accuracy demands of state-of-the-art System-on-Chip environments.
209

Current-Mode Techniques In The Synthesis And Applications Of Analog And Multi-Valued Logic In Mixed Signal Design

Bhat, Shankaranarayana M 11 1900 (has links)
The development of modern integration technologies is normally driven by the needs of digital CMOS circuit design. Rapid progress in silicon VLSI technologies has made it possible to implement multi-function and high performance electronic circuits on a single die. Coupled with this, the need for interfacing digital blocks to the external world resulted in the integration of analog blocks such as A/D and D/A converters, filters and oscillators with the digital logic on the same die. Thus, mixed signal system-on-chip (SOC) solutions are becoming a common practice in the present day integrated circuit (IC) technologies. In digital domain, aggressive technology scaling redefines, in many ways, the role of interconnects vis-`a-vis the logic in determining the overall performance. Apart from signal integrity, power dissipation and reliability issues, delays over long interconnects far exceeding the logic delay becomes a bottleneck in high speed operation. Moreover, with an increasing density of chips, the number of interchip connections is greatly increased as more and more functions are put on the same chip; thus, the size and performance of the chip are mostly dominated by wiring rather than devices. One of the most promising approaches to solve the above interconnection problems is the use of multiple-valued logic (MVL) inside the chip [Han93, Smi88]. The number of interconnections can be directly reduced with multiple valued signal representation. The reduced complexity of interconnections makes the chip area and delay much smaller leading to reduced cross talk noise and improved reliability. Thus, the inclusion of multiple-valued logic in a otherwise mixed design, consisting of analog and binary logic, can make the transition from analog to digital world much more smoother and at the same time improve the overall system performance. As the sizes of integrated devices decrease, maximum voltage ratings also rapidly decrease. Although decreased supply voltages do not restrict the design of digital circuits, it is harder to design high performance analog and multiple valued integrated circuits using new processes. As an alternative to voltage-mode signal processing, current-mode circuit techniques, which use current as a signal carrier, are drawing strong attention today due to their potential application in the design of high-speed mixed-signal processing circuits in low-voltage standard VLSI CMOS technologies. Industrial interest in this field has been propelled by the proposal of innovative ideas for filters, data converters and IC prototypes in the high frequency range [Tou90, Kol00]. Further, in MVL design using conventional CMOS processing, different current levels can be easily used to represent different logic values. Thus the case for an integrated approach to the design of analog, multi-valued and binary logic circuits using current-mode techniques seems to be worth considering. The work presented in this thesis is an effort to reaffirm the utility of current-mode circuit techniques to some of the existing as well as to some new areas of circuit design. We present new algorithms for the synthesis of a class of analog and multiple-valued logic circuits assuming an underlying CMOS current-mode building blocks. Next we present quaternary current-mode signaling scheme employing a simple encoder and decoder architecture for improving the signal delay characteristics of long interconnects in digital logic blocks. As an interface between analog and digital domain, we present an architecture of current-mode flash A/D converter. Finally, low power being a dominant design constraint in today IC technology, we present a scheme for static power minimization in a class of Current-mode circuits.
210

Influence of source/drain residual implant lattice damage traps on silicon carbide metal semiconductor field effect transistor drain I-V characteristics

Adjaye, John, January 2007 (has links)
Thesis (Ph.D.)--Mississippi State University. Department of Electrical and Computer Engineering. / Title from title screen. Includes bibliographical references.

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