In der vorliegenden Arbeit wird die Entwicklung eines kinetischen Energy Harvesters vorgestellt, der auf Grundlage des elektrostatischen Wandlerprinzips aus Vibrationen elektrische Energie generiert. Für die Umsetzung wurde eine Siliziummikrostruktur entworfen, die für Arbeitsfrequenzen unter 100 Hz ausgelegt ist. Die Zahnstruktur der verwendeten Elektroden ermöglicht Spaltabstände im Submikrometerbereich und folglich große Kapazitätsänderungen, die durch die Elektrodengeometrie zusätzlich mit einer höheren Frequenz als die mechanische Bewegung stattfinden. Vergleichsweise große Leistungsausbeuten und geringe Quellimpedanzen sind dadurch erreichbar. Die geometrischen Parameter der Elektroden wurden unter Berücksichtigung der auftretenden Fertigungstoleranzen und Wechselwirkungen zueinander optimiert. Für die Ausnutzung einer ausreichend großen Inertialmasse wurde ein feinwerktechnisch hergestellter Hebelmechanismus an die Mikrostruktur angekoppelt. Über diesen wird zusätzlich ein neuer Ansatz zur Abstimmung der Eigenfrequenz des Harvesters umgesetzt. Experimentelle Untersuchungen zeigten Ausgangsleistungen im einstelligen Mikrowattbereich bei Anregungen im Zehntel m/s²-Bereich. Durch fortschreitende Optimierungen der Fertigungstechnologie sind noch deutliche Leistungssteigerungen um mindestens zwei Größenordnungen möglich. Weiterhin wird ein Energiemanagementsystem vorgestellt, welches die effiziente Übertragung der Energie auf den Verbraucher ermöglicht. / In this work the development of a kinetic energy harvester using the electrostatic conversion principle is presented. The silicon microstructure is designed to work in frequency ranges below 100Hz. Its toothed electrode structure enables gap distances in the sub micrometer range and consequently high changes of capacitance. Additionally, due to the electrode geometry the frequency of the capacitance changes is higher then the frequency of the mechanical movement. Thus high power outputs and low source impedances can be reached. The electrodes geometric parameters were optimized considering manufacturing tolerances and interactions of the parameters. To reach a sufficient inertial mass, a lever mechanism manufactured by precision engineering was connected to the microstructure. This mechanism also allows the implementation of a new method of frequency tuning. In experimental tests power outputs in the single digit microwatt range under excitations of 0.3 m/s² were reached. In accordance of further optimizations of the manufacturing technology significantly higher outputs, by at least two orders of magnitude, are possible,. Furthermore an energy management system is presented, that allows the efficient transfer of the electrical energy to the consumer.

In the latter half of the 20th century the first active environmentalist movements such as Greenpeace and the International Energy Agency were born and initiated a gradual rethinking of environmental awareness. Against all expectations the sole agency under international law for climate protection policy, called the United Nations Framework Convention on Climate Change, was formed 20 years later. Today the awareness of sustained, regenerative and environmental policies permeates throughout all areas of life, science and industry. But energy provision is the most decisive topic, especially since the discussions concerning the phase out of nuclear power where the voices calling for alternative energy sources have become much more vociferous. In addition the depletion of fossil fuels is expected to occur in the not too distant future. All new energy generation methods are required to meet the present and future energy demands, need to be ecological and need to exhibit the same or significantly lower cost expenditure than current energy sources. Unfortunately mankind is confronted with the problem that current commercial alternative energies are more expensive and not yet remotely as efficient as the present energy sources. Although energy provision based on water, wind, sun and geothermal sources have a huge potential because of their continuous presence, unfortunately, they are plagued by inefficient energy conversion caused by the state of technology i.e. the conversion of sun light into electricity loses energy through heat emission, reflection of the sun light, the inability of the material to absorb the entire sun spectrum and the ohmic losses in the transmission of electric current. The sun power is the most exhaustless resource and moreover through photovoltaic action, one of the most direct and cleanest source for use in energy conversion. Presently incoming sun light is not transformed in its entirely, as much degradation occurs during photon absorption and electron transfer processes. A number of other innovative possibilities have also been researched. With respect to cost and efficiency one of the most promising devices is injection solar cells (ISC). By dint of the dye sensitised solar cell (DSSC) Grätzels findings provided the foundations for much research into this type of solar cell where the light absorbing molecule employed in is a dye.[1] The current is obtained through charge separation in the dye, which is initiated through the connection between the dye and a metal oxide on the one hand and a matched redox couple on the other. In a variant of the DSSC the charge separation processes can also occur between a nanoporous metal oxide and nanoparticles giving rise to a quantum dot sensitised solar cell (QDSSC).[2] The use of nanoparticle (NP) properties can be utilized for the harvesting of solar energy, as demonstrated by Kamat and coworkers[3] who were able to exploit these findings subsequently and prepare a number of nanoparticle based solar cells. Nanoparticle research has comprised a wide field of science and nanotechnology for a number of years. As the size of a material approaches dimensions on the nm scale the surface properties contribute proportionally more to the sum of the properties than the volume due to the increase in the surface to volume ratio. These dimensions also constitute a threshold in which quantum physical effects need to be taken into account. Hence the properties of devices or materials in this size regime are inevitably size dependent. The basic principles can be described by two different theories, one of which is based on molecular orbital theory in which the particle is treated as a molecule. For this reason n atomic orbitals with the same symmetry and energy can build up n molecular orbitals through their linear combination based on the LCAO method (Linear Combination of Atomic Orbitals).[4] In the case of solids the orbitals build up energy bands, where the unoccupied states form the quasi continous conduction band (CB) and the occuppied states form the quasi continous valence band (VB). The energy \"forbidden\" area in between these two bands is called the band gap. The band gap is a fixed material property for bulk solids but depends on size in the case of the nanoparticles. In contrast to the LCAO method, simplified solid state theory will be used throughout the present work, the theoretical background of which is provided by the effective mass approximation.[5] When an absorption of a photon occurs, an exciton (electron-hole pair) can be generated. By promoting an electron (e-) from the valence band into the conduction band a hole (h+) may be said to remain in the valence band. By comparison to bulk solids, in a small particle the free charges can sense the potential barrier i.e. the edges of the nanoparticle. Analogous to the particle in a box model this potential barrier interaction results in an increase in the band gap as the particle size decreases. In a solar cell NPs with a particle size which possess a band gap energy in the near infrared (NIR) may be utilised and therefore the NPs will be able to absorb in this spectral region. However NPs also have the ability to absorb higher energy photons due to the continuum present in their band structure, so that almost the entire sun spectral range from the NIR up to UV wavelengths may be absorbed just by using the appropriate NP material and size. Suitable NPs are metal chalcogenides e.g. MX (where M = cadmium, zinc or lead and X = sulfur, selenium or tellurium) because of their bandgap size[6–10] and their relative band positions compared to those of the semiconductor oxide states. Both the TiO2/CdSe[11–14] and TiO2/CdTe[15–18] systems have already been successfully fabricated and many of the anomalies reported.[3] Much interest in the lead chalcogenides has been generated by reports that they may feature the possibility to exhibit multiple exciton generation (MEG) where the absorption of one high energy photon can result in more than one electron-hole pairs.[19–25] Currently electrochemical impedance spectroscopy (EIS) is being used more and more to clarify processes at polarisable surfaces and materials such as nanoparticles. Likewise this method has been rediscovered in photovoltaic research and its use in the characterisation of DSSCs has been discussed in the literature.[26–31] In a number of publications the evaluation of nanoporous and porous structures has been quite extensively explored.[28,29,32–34] Since the mid-20th century Jaffé’s[35] theoretical work concerning the steady- state ac response of solid and liquid systems lead to the formation of the basics of EIS. Further developments in the measurement technology have lead to a broader range of analysis becoming possible. Nevertheless the most challenging part still remains the interpretation of the results and especially to merge the measured data with the theoretical model. EIS quantifies the changes in a small ac current response at electrode electrolyte interfaces i.e. the rate at which the polarized domain will respond, when an ac potential is applied. In this way dielectric properties of materials or composites, such as charge transfers, polarization effects, charge recombination and limitations can be measured as a function of frequency and mechanistic information may be unveiled. Hence EIS allows one to draw a conclusion concerning chemical reactions, surface properties as well as interactions between the electrodes and the electrolyte. Other very useful tools that may be employed for quantifying electron transfer processes and their time domains are intensity modulated photocurrent spectroscopy (IMPS) and intensity modulated photovoltage spectroscopy (IMVS). IMPS permits the generation of time-resolved plots of particular photo-processes in the system, each of which may be specifically addressed through varying the excitation wavelength. For the IMPS technique a sinusoidal wave with a small amplitude is applied, analogous to that of electrochemical impedance spectroscopy, but in this case the modulation is applied to a light source and not to the electrochemical cell as in EIS.[35] The current response is associated with the photogenerated charge carriers which flow through the system and finally discharge into the circuit. The amount of generated and discharged charge carriers is often different due to the presence of recombination and capture processes in surface or trap states. Ultimately the phase shift and magnitude of these currents reveal the kinetics of such processes. The only processes that will be addressed will be those that occur in the same frequency domain or on the same time scale as that of the modulated frequency of the illuminated light. In the literature some explanation of the kinetics of simple systems can be found and basic theories and introductive disquisitions may be found elsewhere.[36–38] Furthermore in solar cell research a multiplicity of studies are available which give an account of IMPS measurements on TiO2 nanoporous structures. Such studies permitted proof for the electron trapping and detrapping mechanism in TiO2 surface states.[39,40] An analysis of TiO2 electrodes combined with a dye sensitization step was established in the work of Peter and Ponomarev.[41–43] Hickey et.al.[44,45] have previously published kinetic studies on CdS nanoparticle (NP) modified electrodes. A theory was presented which allows for the IMPS data to be the interpreted in the case of CdS NP based electrodes. The back transfer, recombination and surface states have been demonstrated to be important as was determined from their inclusion in the theory. Similar attempts to explain the kinetics of CdS quantum dots are described by Bakkers et.al.[46]. In the present work the most important questions concern the behaviour of the photovoltaic assembly. Such assemblies can be equated with an electrode in contact with an electrolyte. Preliminary remarks about such electrodes as components of an electrochemical cell will be introduced in the first part of chapter 2. Thereafter the properties of electrodes in contact with the electrolyte and under illuminated conditions are illustrated. This is followed by a description of the important electrochemical and opto-electrochemical methods which have been employed in these studies. In particular, two separate subsections are dedicated to the methods of EIS and IMPS and the experimental section which are then linked to the theoretical section. The synthesis of all substances used and the preparation of the solar cell substrates are also dealt with in this section as will the equipment used and the instrument settings employed. The optical response of the working photoactive electrode is not only dependent on the substances used but also on their arrangement and linkage. The substrate which was employed in chapter 3 consists of a nanoporous ZnO gel layer upon which an organic linker has been placed in order to connect the oxide layer with the light absorbing component, the PbS NPs. Chapter 3 deals with the linker dependence on the ZnO layer and reports the typical optical characteristics and assembly arrangements of six different linkers on the ZnO layer which is an important intermediate stage in the fabrication of an ISC. The questions concerning how the type of linking affects the photo response and other electrochemical interactions of the complete solar cell substrate will be outlined in chapter 4. Further an examination of the electrochemical and opto-electrochemical behaviours of the samples will be presented similar to that presented in chapter 3. The most interesting substrate resulting from the investigations as described in chapter 3 and 4 will be used for a more in-depth characterisation by EIS in chapter 5. A suitable model and the results of the calculation of the ISC and the intermediate stages will be presented. The potential dependence, the dependence on the illuminated wavelength and also the size dependence of the PbS nanoparticles will be discussed. It will be revealed that ZnO is chemically unstable in contact with some of the linkers. For that reason the same linker study has been repeated with the more stable TiO2 employed as the wide band metal oxide. Comparisons between the different semiconductor metal oxides are made in chapter 6. In addition a number of open questions which previously had remained unanswered due to the instability of the ZnO can now be answered. In chapter 7 another highly porous structure different from that of the ZnO gel structure has been studied to determine its suitability as an ISC substrate. The structure arises from the electrodeposition of a ZnO reactant in the presence of eosin Y dye molecules. In the end the desorption of the dye provides a substrate with a high degree of porosity. Compared to the ZnO gel which was prepared and used for measurements in chapter 3 and 4, the electrodeposited ZnO is of a higher crystallinity and possesses a more preferential orientation. This results in a lower amount of grain boundaries which in turn results in fewer trap processes and subsequently yields a higher effective diffusion of the electron through the layer.[47,48] Optical and (opto-)electrochemical methods have been used for the basic characterisation of the untreated ZnO/Eosin Y and all other materials used in the fabrication of the ISC and a comparison with the ZnO gel used in chapter 3 and 4 will be made. Finally in chapter 8 an alternative metal oxide structure will be discussed. The background to this last chapter is to examine the influence of the ISC where the oxidic layer is present as a highly periodic arrangement, known as a photonic crystal. The TiO2 metal oxide which was also used in chapter 6 has been structured to form an inverse opal. First preparative findings and the first illustration of the (opto-)electrochemical results are presented. Consequently suggestions for improvements will be made. It is envisaged that the information gathered and presented here will help to achieve a deeper understanding of solar cells and help to improve the device efficiency and the interplay of the materials. Elementary understanding paves the way for further developments which can also contribute to providing devices for more efficient energy conversion.

Für die Optimierung akustischer Eigenschaften von Räumen ist die Verbesserung deren numerischer Simulationen von entscheidender Bedeutung. Im unteren Frequenzbereich hängt in vielen Fällen die Qualität der Lösungen stark von der Kenntnis akustischer Wandadmittanzen ab. Die vorliegende Arbeit umfasst die Entwicklung und Untersuchung verschiedener auf deterministischen Diskretisierungen des akustischen Randwertproblems basierender Formulierungen zur globalen Bestimmung frequenzabhängiger Admittanzparameter. Mit Admittanzen kann das Reflexions- und Absorptionsverhalten von Wänden quantifiziert werden. Der vorgestellte Ansatz der globalen Admittanzbestimmung in Innenräumen ermöglicht die Berücksichtigung schrägen Schalleinfalls. Die Methode sieht ein Experiment vor, bei dem das Schallfeld mit Mikrofonen abgetastet, alle vorhandenen Schallquellen bestimmt sowie die Geometrie des akustischen Raumes erfasst werden. Mit den in der Arbeit entwickelten Algorithmen wird eine globale Admittanzverteilung für den gesamten Rand aus diesen Daten berechnet. Mit Hilfe erfolgreich identifizierter Admittanzverläufe sollen Simulationen niederfrequenter Wellenausbreitungen in Räumen auch komplizierter Geometrien und Oberflächenbeschaffenheiten durch Hinzunahme von Admittanzrandbedingungen ermöglicht und verbessert werden. Die Bestimmung von Wandadmittanzen aus partiell bekannten Schalldruckwerten wird mathematisch als inverses Problem eingeordnet. Für die inversen Algorithmen werden die Methoden der Randelemente (BE) und der finiten Elemente (FE) zur Diskretisierung des akustischen Randwertproblems verwendet. Aus den Gleichungen der BE-Diskretisierung lässt sich ein schlecht konditioniertes, aber dafür lineares Gleichungssystem für das inverse Problem finden, während die FE-basierte Formulierung ein nichtlineares, aufgrund der Komplexität des Problems meist ebenfalls schlecht konditioniertes Optimierungsproblem darstellt. Ein wesentliches Ergebnis dieser Arbeit ist die Gegenüberstellung der linearen und nichtlinearen Algorithmen des inversen Problems in Hinblick auf deren Herleitungen, die umgesetzten Berechnungsverfahren und der sich stark unterscheidenden Lösungsqualitäten. Untersuchungen der Admittanzrekonstruktion an zwei- und dreidimensionalen theoretischen Modellen verdeutlichen die Einflüsse der Modellgenauigkeit, des Messumfanges und des Messrauschens auf die Ergebnisse der inversen Algorithmen. Anhand der Anwendung auf Messdaten eines bei Brüel & Kjaer durchgeführten Experimentes wird das inverse Verfahren der globalen Admittanzbestimmung einem Praxistest unterzogen. / Reflection and absorption of sound waves on boundaries play a determining role for the optimization of acoustical properties in closed rooms. Above all the geometry and dynamic behavior of the wall structure are responsible for it. These boundary terms are quantifiable within the scope of numerical acoustics by the so-called admittance boundary conditions of the acoustical boundary value problem. Especially at low frequencies the quality of acoustical simulation depends strongly on the recognition of boundary admittances. The present work includes the development of two different inverse algorithms based on deterministic discretization methods for the global determination of frequency-dependent boundary admittance parameters. The approach of global determination of admittances allows to take account for non-perpendicular wave incident. For the method to work an experiment shall be initially conducted. In that process all present sound sources and microphone arrays scanning the sound field must be located and measured and a model of the geometry of the room needs to be created. The developed algorithms calculate then a global admittance distribution based on this data. Using successfully identified admittance characteristics as admittance boundary condition, low frequency simulation in rooms of complex geometry and arbitrary consistency of the surface shall be improved. Identifying boundary admittances out of partially measured sound pressure data is classifiable as inverse acoustic problem. In order to develop inverse formulations the acoustical boundary value problem is discretized by means of the Boundary Element and the Finite Element Method. The inverse formulation of the Boundary Element equations composes an ill-posed but linear system of equations. In contrast, based on Finite Elements only a nonlinear optimization problem can be set up that often features a bad condition due to the complexity of the inverse problem. The comparison of these linear and nonlinear algorithms of the inverse acoustic problem of global determination of boundary admittances in respect of derivation, implemented solution techniques and differing solution qualities states an essential result of this work. The investigation of admittance reconstruction at two and three-dimensional theoretical models reveal the influences of model accuracy, measurement expense and noise on measured data onto the results of both inverse algorithms. Finally, the problem of global admittance determination is subjected to experimentally obtained data (at Brüel & Kjaer) in order to check for practical applicability.

Electronic circuits comprising organic semiconductor thin-films are part of promising technologies for a renewable power generation and an energy-efficient information technology. Whereas TV and mobile phone applications of organic light emitting diodes (OLEDs) got ready for the market awhile ago, organic photovoltaics still lack in power conversion efficiencies, especially in relation to their current fabrication costs. A major reason for the low efficiencies are losses due to the large number of charge carrier traps in organic semiconductors as compared to silicon. It is the aim of this thesis to identify and quantify charge carrier traps in vacuum-deposited organic semiconductor thin-films and comprehend the reasons for the trap formation. For that, the techniques impedance spectroscopy (IS), thermally stimulated currents (TSC), and photoelectron spectroscopy are utilized. In order to assess the absolute energy of charge carrier traps, the charge carrier transport levels are computed for various hole transport materials such as MeO-TPD, pentacene, and ZnPc. Unlike inorganics, organic semiconductors possess in first-order approximation Gaussian distributed densities of states and temperaturedependent transport levels. The latter shift by up to 300 meV towards the energy gap-mid when changing from room temperature to 10 K as it is done for TSC examinations. The frequency-dependent capacitance response of charge carrier traps in organic Schottky diodes of pentacene and ZnPc are studied via impedance spectroscopy. In undoped systems, deep traps with depths of approx. 0.6 eV and densities in the order of 1016...1017 cm−3 are prevailing. For pentacene, the deep trap density is reduced when the material undergoes an additional purification step. Utilizing p-doping, the Fermi level is tuned in a way that deep traps are saturated. Vice versa, the freeze-out of p-doped ZnPc provides further insight into the influence of trap-filling, impurity saturation and reserve on the Fermi level position in organic semiconductors. Furthermore, charge carrier traps are investigated via thermally stimulated currents. It is shown that the trap depths are obtained correctly only if the dispersive transport of the released charge carriers until their extraction is considered. For the first time, the polarity of charge carrier traps in MeO-TPD, ZnPc, and m-MTDATA is identified from TSC’s differences in release time when spacer layers are introduced in the TSC samples. Simultaneously, tiny hole mobilities in the order of 10−13 cm2 Vs−1 are detected for low-temperature thin-films of the hole transporter material Spiro-TTB. It is shown for Spiro-TTB co-evaporated with the acceptor molecule F6-TCNNQ and a p-doped ZnPc:C60 absorber blend that the doping process creates shallow trap levels. Finally, various organic hole transport materials are examined upon their stability in water and oxygen atmosphere during sample fabrication and storage of the organic electronics. In case of pentacene, ZnPc, MeO-TPD, and m-MTDATA, hole traps are already present in unexposed thin-films, which increase in trap density upon oxygen exposure. A global trap level caused by oxygen impurities is found at energies of 4.7...4.8 eV that is detrimental to hole transport in organic semiconductors. / Elektronische Bauelemente aus Dünnschichten organischer Halbleiter sind Teil möglicher Schlüsseltechnologien zur regenerativen Energiegewinnung und energieeffizienten Informationstechnik. Während Fernseh- und Mobilfunkanwendungen organischer Leuchtdioden (OLEDs) bereits vor einiger Zeit Marktreife erlangt haben, ist die organische Photovoltaik (OPV) noch durch zu hohe Fertigungskosten in Relation zu unzureichenden Effizienzen unrentabel. Ein wesentlicher Grund für die niedrigen Wirkungsgrade sind Verluste durch die im Vergleich zu Silizium hohe Zahl an Ladungsträgerfallen in organischen Halbleitern. Ziel dieser Arbeit ist es, mittels Impedanz-Spektroskopie (IS), thermisch stimulierten Strömen (TSC) und Photoelektronenspektroskopie methodenübergreifend Ladungsträgerfallen in vakuumverdampften organischen Dünnschichten zu identifizieren, zu quantifizieren und ihre Ursachen zu ergründen. Um die Energie von Ladungsträgerfallen absolut beziffern zu können, wird zunächst für verschiedene Lochtransportmaterialien wie z.B. MeO-TPD, Pentazen und ZnPc die Transportenergie aus den in erster Ordnung gaußförmigen Zustandsdichten berechnet. Im Gegensatz zu anorganischen Halbleitern ist die Transportenergie in organischen Halbleitern temperaturabhängig. Sie verschiebt sich beim Übergang von Raumtemperatur zu 10 K, wie für TSC Untersuchungen bedeutsam, um bis zu 300 meV in Richtung der Bandlückenmitte. Mittels Impedanz-Spektroskopie wird die frequenzabhängige Kapazitätsantwort von Ladungsträgerfallen in organischen Schottky-Dioden aus Pentazen und ZnPc untersucht. In undotierten Systemen dominieren Defekte mit Tiefen um 0.6 eV, deren Dichte in der Größenordnung von 1016...1017 cm−3 liegt, sich aber im Fall von Pentazen durch einen zusätzlichen Materialaufreinigungsschritt halbieren lässt. Über p-Dotierung wird das Fermi-Level so eingestellt, dass tiefe Fallen abgesättigt werden können. Umgekehrt liefert das Ausfrieren von p-dotiertem ZnPc weitere Belege für den Einfluss von Fallenzuständen, Störstellen-Erschöpfung und Reserve auf das Fermi-Level in dotierten organischen Halbleitern. Im Weiteren werden Ladungsträgerfallen über thermisch stimulierte Ströme untersucht. Es wird gezeigt, dass die Fallentiefen nur dann konsistent bestimmt werden, wenn der dispersive Transport von freigesetzten Ladungsträgern zur Extraktionsstelle berücksichtigt wird. Durch Einführung von ’Abstandshalterschichten’ werden erstmalig über TSC die Polaritäten von Ladungsträgerfallen in MeO-TPD, ZnPc und m-MTDATA per Laufzeitunterschied bestimmt. Gleichzeitig werden geringste Löcherbeweglichkeiten in der Größenordnung von 10−13 cm2 Vs−1 für stark gekühlte Dünnschichten des Lochtransporters Spiro-TTB gemessen. Wie für Spiro-TTB koverdampft mit dem Akzeptormolekül F6-TCNNQ und p-dotierte Mischschichten der Absorbermaterialien ZnPc und C60 gezeigt, erzeugt Dotierung relativ flache Störstellen. Abschließend werden verschiedene organische Lochtransporter-Materialien auf ihre Stabilität in Wasser- und Sauerstoffatmosphären während der Prozessierung und der Lagerung fertiger elektronischer Bauelemente untersucht. Für Pentazen, ZnPc, MeO-TPD und m-MTDATA werden Löcherfallen in intrinsischen Dünnschichten nachgewiesen. Bei Kontakt mit Sauerstoff nimmt deren Defektdichte zu. Es findet sich ein universales Fallenniveau bei rund 4.7...4.8 eV, verursacht durch Sauerstoffverunreinigungen, welches den Lochtransport in organischen Halbleitern limitiert.

Ultrasonic transducers are used in many fields of daily life, e.g. as parking aids or medical devices. To enable their usage also for mass applications small and low- cost transducers with high performance are required. Capacitive, micro-machined ultrasonic transducers (CMUT) offer the potential, for instance, to integrate compact ultrasonic sensor systems into mobile phones or as disposable transducer for diverse medical applications. This work is aimed at providing fundamentals for the future commercialization of CMUTs. It introduces novel methods for the acoustic simulation and characterization of CMUTs, which are still critical steps in the product development process. They allow an easy CMUT cell design for given application requirements. Based on a novel electromechanical model for CMUT elements, the device properties can be determined by impedance measurement already. Finally, an end-of-line test based on the electrical impedance of CMUTs demonstrates their potential for efficient mass production.

Carbon nano tubes (CNT’s) are promising candidates for several sensor applications such as optical sensors, strain gauges or flow sensors. For certain sensor structures liquid CNT dispersions are required. These are important not only for the realization of CNT-films for sensors like strain gauges but also for technological processes such as dielectrophoresis. CNT-films are realized by deposing the dispersion on a carrier material followed by a drying process. The dispersion properties depend on several parameters like CNT concentration, surfactant concentration, sonication time, centrifugation time, storing time and other parameters. Methods for characterization of dispersions are up to now limited to UV/VIS spectroscopy. This is generally limited to low CNT concentrations. This paper discusses the possibility to use impedance spectroscopy as characterization method for the stability of the dispersions. The impedance of the dispersion was measured using a conductivity measurement cell with platinum electrodes. The behavior of characteristic points of the impedance spectrum was investigated for three identically prepared samples during 7 days of storing time. The systematic trend observed is definitively larger than the variance between different samples. With increasing time after preparation the CNT fallout will increase and the amount of deposable CNT’s will decrease. The decreasing imaginary part indicates an easier diffusion of surfactant molecules because they are not longer attached to CNT’s.

Für die Optimierung akustischer Eigenschaften von Räumen ist die Verbesserung deren numerischer Simulationen von entscheidender Bedeutung. Im unteren Frequenzbereich hängt in vielen Fällen die Qualität der Lösungen stark von der Kenntnis akustischer Wandadmittanzen ab. Die vorliegende Arbeit umfasst die Entwicklung und Untersuchung verschiedener auf deterministischen Diskretisierungen des akustischen Randwertproblems basierender Formulierungen zur globalen Bestimmung frequenzabhängiger Admittanzparameter. Mit Admittanzen kann das Reflexions- und Absorptionsverhalten von Wänden quantifiziert werden. Der vorgestellte Ansatz der globalen Admittanzbestimmung in Innenräumen ermöglicht die Berücksichtigung schrägen Schalleinfalls. Die Methode sieht ein Experiment vor, bei dem das Schallfeld mit Mikrofonen abgetastet, alle vorhandenen Schallquellen bestimmt sowie die Geometrie des akustischen Raumes erfasst werden. Mit den in der Arbeit entwickelten Algorithmen wird eine globale Admittanzverteilung für den gesamten Rand aus diesen Daten berechnet. Mit Hilfe erfolgreich identifizierter Admittanzverläufe sollen Simulationen niederfrequenter Wellenausbreitungen in Räumen auch komplizierter Geometrien und Oberflächenbeschaffenheiten durch Hinzunahme von Admittanzrandbedingungen ermöglicht und verbessert werden. Die Bestimmung von Wandadmittanzen aus partiell bekannten Schalldruckwerten wird mathematisch als inverses Problem eingeordnet. Für die inversen Algorithmen werden die Methoden der Randelemente (BE) und der finiten Elemente (FE) zur Diskretisierung des akustischen Randwertproblems verwendet. Aus den Gleichungen der BE-Diskretisierung lässt sich ein schlecht konditioniertes, aber dafür lineares Gleichungssystem für das inverse Problem finden, während die FE-basierte Formulierung ein nichtlineares, aufgrund der Komplexität des Problems meist ebenfalls schlecht konditioniertes Optimierungsproblem darstellt. Ein wesentliches Ergebnis dieser Arbeit ist die Gegenüberstellung der linearen und nichtlinearen Algorithmen des inversen Problems in Hinblick auf deren Herleitungen, die umgesetzten Berechnungsverfahren und der sich stark unterscheidenden Lösungsqualitäten. Untersuchungen der Admittanzrekonstruktion an zwei- und dreidimensionalen theoretischen Modellen verdeutlichen die Einflüsse der Modellgenauigkeit, des Messumfanges und des Messrauschens auf die Ergebnisse der inversen Algorithmen. Anhand der Anwendung auf Messdaten eines bei Brüel & Kjaer durchgeführten Experimentes wird das inverse Verfahren der globalen Admittanzbestimmung einem Praxistest unterzogen. / Reflection and absorption of sound waves on boundaries play a determining role for the optimization of acoustical properties in closed rooms. Above all the geometry and dynamic behavior of the wall structure are responsible for it. These boundary terms are quantifiable within the scope of numerical acoustics by the so-called admittance boundary conditions of the acoustical boundary value problem. Especially at low frequencies the quality of acoustical simulation depends strongly on the recognition of boundary admittances. The present work includes the development of two different inverse algorithms based on deterministic discretization methods for the global determination of frequency-dependent boundary admittance parameters. The approach of global determination of admittances allows to take account for non-perpendicular wave incident. For the method to work an experiment shall be initially conducted. In that process all present sound sources and microphone arrays scanning the sound field must be located and measured and a model of the geometry of the room needs to be created. The developed algorithms calculate then a global admittance distribution based on this data. Using successfully identified admittance characteristics as admittance boundary condition, low frequency simulation in rooms of complex geometry and arbitrary consistency of the surface shall be improved. Identifying boundary admittances out of partially measured sound pressure data is classifiable as inverse acoustic problem. In order to develop inverse formulations the acoustical boundary value problem is discretized by means of the Boundary Element and the Finite Element Method. The inverse formulation of the Boundary Element equations composes an ill-posed but linear system of equations. In contrast, based on Finite Elements only a nonlinear optimization problem can be set up that often features a bad condition due to the complexity of the inverse problem. The comparison of these linear and nonlinear algorithms of the inverse acoustic problem of global determination of boundary admittances in respect of derivation, implemented solution techniques and differing solution qualities states an essential result of this work. The investigation of admittance reconstruction at two and three-dimensional theoretical models reveal the influences of model accuracy, measurement expense and noise on measured data onto the results of both inverse algorithms. Finally, the problem of global admittance determination is subjected to experimentally obtained data (at Brüel & Kjaer) in order to check for practical applicability.

Electronic circuits comprising organic semiconductor thin-films are part of promising technologies for a renewable power generation and an energy-efficient information technology. Whereas TV and mobile phone applications of organic light emitting diodes (OLEDs) got ready for the market awhile ago, organic photovoltaics still lack in power conversion efficiencies, especially in relation to their current fabrication costs. A major reason for the low efficiencies are losses due to the large number of charge carrier traps in organic semiconductors as compared to silicon. It is the aim of this thesis to identify and quantify charge carrier traps in vacuum-deposited organic semiconductor thin-films and comprehend the reasons for the trap formation. For that, the techniques impedance spectroscopy (IS), thermally stimulated currents (TSC), and photoelectron spectroscopy are utilized. In order to assess the absolute energy of charge carrier traps, the charge carrier transport levels are computed for various hole transport materials such as MeO-TPD, pentacene, and ZnPc. Unlike inorganics, organic semiconductors possess in first-order approximation Gaussian distributed densities of states and temperaturedependent transport levels. The latter shift by up to 300 meV towards the energy gap-mid when changing from room temperature to 10 K as it is done for TSC examinations. The frequency-dependent capacitance response of charge carrier traps in organic Schottky diodes of pentacene and ZnPc are studied via impedance spectroscopy. In undoped systems, deep traps with depths of approx. 0.6 eV and densities in the order of 1016...1017 cm−3 are prevailing. For pentacene, the deep trap density is reduced when the material undergoes an additional purification step. Utilizing p-doping, the Fermi level is tuned in a way that deep traps are saturated. Vice versa, the freeze-out of p-doped ZnPc provides further insight into the influence of trap-filling, impurity saturation and reserve on the Fermi level position in organic semiconductors. Furthermore, charge carrier traps are investigated via thermally stimulated currents. It is shown that the trap depths are obtained correctly only if the dispersive transport of the released charge carriers until their extraction is considered. For the first time, the polarity of charge carrier traps in MeO-TPD, ZnPc, and m-MTDATA is identified from TSC’s differences in release time when spacer layers are introduced in the TSC samples. Simultaneously, tiny hole mobilities in the order of 10−13 cm2 Vs−1 are detected for low-temperature thin-films of the hole transporter material Spiro-TTB. It is shown for Spiro-TTB co-evaporated with the acceptor molecule F6-TCNNQ and a p-doped ZnPc:C60 absorber blend that the doping process creates shallow trap levels. Finally, various organic hole transport materials are examined upon their stability in water and oxygen atmosphere during sample fabrication and storage of the organic electronics. In case of pentacene, ZnPc, MeO-TPD, and m-MTDATA, hole traps are already present in unexposed thin-films, which increase in trap density upon oxygen exposure. A global trap level caused by oxygen impurities is found at energies of 4.7...4.8 eV that is detrimental to hole transport in organic semiconductors. / Elektronische Bauelemente aus Dünnschichten organischer Halbleiter sind Teil möglicher Schlüsseltechnologien zur regenerativen Energiegewinnung und energieeffizienten Informationstechnik. Während Fernseh- und Mobilfunkanwendungen organischer Leuchtdioden (OLEDs) bereits vor einiger Zeit Marktreife erlangt haben, ist die organische Photovoltaik (OPV) noch durch zu hohe Fertigungskosten in Relation zu unzureichenden Effizienzen unrentabel. Ein wesentlicher Grund für die niedrigen Wirkungsgrade sind Verluste durch die im Vergleich zu Silizium hohe Zahl an Ladungsträgerfallen in organischen Halbleitern. Ziel dieser Arbeit ist es, mittels Impedanz-Spektroskopie (IS), thermisch stimulierten Strömen (TSC) und Photoelektronenspektroskopie methodenübergreifend Ladungsträgerfallen in vakuumverdampften organischen Dünnschichten zu identifizieren, zu quantifizieren und ihre Ursachen zu ergründen. Um die Energie von Ladungsträgerfallen absolut beziffern zu können, wird zunächst für verschiedene Lochtransportmaterialien wie z.B. MeO-TPD, Pentazen und ZnPc die Transportenergie aus den in erster Ordnung gaußförmigen Zustandsdichten berechnet. Im Gegensatz zu anorganischen Halbleitern ist die Transportenergie in organischen Halbleitern temperaturabhängig. Sie verschiebt sich beim Übergang von Raumtemperatur zu 10 K, wie für TSC Untersuchungen bedeutsam, um bis zu 300 meV in Richtung der Bandlückenmitte. Mittels Impedanz-Spektroskopie wird die frequenzabhängige Kapazitätsantwort von Ladungsträgerfallen in organischen Schottky-Dioden aus Pentazen und ZnPc untersucht. In undotierten Systemen dominieren Defekte mit Tiefen um 0.6 eV, deren Dichte in der Größenordnung von 1016...1017 cm−3 liegt, sich aber im Fall von Pentazen durch einen zusätzlichen Materialaufreinigungsschritt halbieren lässt. Über p-Dotierung wird das Fermi-Level so eingestellt, dass tiefe Fallen abgesättigt werden können. Umgekehrt liefert das Ausfrieren von p-dotiertem ZnPc weitere Belege für den Einfluss von Fallenzuständen, Störstellen-Erschöpfung und Reserve auf das Fermi-Level in dotierten organischen Halbleitern. Im Weiteren werden Ladungsträgerfallen über thermisch stimulierte Ströme untersucht. Es wird gezeigt, dass die Fallentiefen nur dann konsistent bestimmt werden, wenn der dispersive Transport von freigesetzten Ladungsträgern zur Extraktionsstelle berücksichtigt wird. Durch Einführung von ’Abstandshalterschichten’ werden erstmalig über TSC die Polaritäten von Ladungsträgerfallen in MeO-TPD, ZnPc und m-MTDATA per Laufzeitunterschied bestimmt. Gleichzeitig werden geringste Löcherbeweglichkeiten in der Größenordnung von 10−13 cm2 Vs−1 für stark gekühlte Dünnschichten des Lochtransporters Spiro-TTB gemessen. Wie für Spiro-TTB koverdampft mit dem Akzeptormolekül F6-TCNNQ und p-dotierte Mischschichten der Absorbermaterialien ZnPc und C60 gezeigt, erzeugt Dotierung relativ flache Störstellen. Abschließend werden verschiedene organische Lochtransporter-Materialien auf ihre Stabilität in Wasser- und Sauerstoffatmosphären während der Prozessierung und der Lagerung fertiger elektronischer Bauelemente untersucht. Für Pentazen, ZnPc, MeO-TPD und m-MTDATA werden Löcherfallen in intrinsischen Dünnschichten nachgewiesen. Bei Kontakt mit Sauerstoff nimmt deren Defektdichte zu. Es findet sich ein universales Fallenniveau bei rund 4.7...4.8 eV, verursacht durch Sauerstoffverunreinigungen, welches den Lochtransport in organischen Halbleitern limitiert.

Ultrasonic transducers are used in many fields of daily life, e.g. as parking aids or medical devices. To enable their usage also for mass applications small and low- cost transducers with high performance are required. Capacitive, micro-machined ultrasonic transducers (CMUT) offer the potential, for instance, to integrate compact ultrasonic sensor systems into mobile phones or as disposable transducer for diverse medical applications. This work is aimed at providing fundamentals for the future commercialization of CMUTs. It introduces novel methods for the acoustic simulation and characterization of CMUTs, which are still critical steps in the product development process. They allow an easy CMUT cell design for given application requirements. Based on a novel electromechanical model for CMUT elements, the device properties can be determined by impedance measurement already. Finally, an end-of-line test based on the electrical impedance of CMUTs demonstrates their potential for efficient mass production.

Pressure oscillation in hydrostatic drive trains can cause noise and damage to components. They impair function and reliability. The visualization of the oscillation mode helps to clarify the causal relationships in the hydrostatic drive train and is a basis for the development of remedial measures. Analysis of the pressure oscillation situation, however, can only be carried out in the complete system, since line branching and the impedance of the hydrostats have an influence on the resonance frequencies and the oscillation modes. If only the line length between the components is considered in the pressure oscillation analysis, neither the calculated frequencies nor the position of the pressure antinodes where possible remedial measures are to be placed are correct. This paper presents the metrological determination of the impedance of a hydrostat on a functional test bench (“mobile impedance measurement”) and the preparation of the measurement data for the subsequent simulative pressure oscillation analysis of a hydraulic drive train.