Cette thèse contribue à l’étude des effets géants et anormaux de piézo-résistance (PZR) observés dans le nano-silicium. La PZR du silicium massif est devenue la clé de voûte de nombreuses technologies dont l’industrie micro-électronique vise des dispositifs de dimensions nanométriques. Il est donc logique d’investiguer la PZR du silicium à ces échelles spatiales où ont été révélé l’existence d’une PZR géante et d’une PZR d’amplitude « normale » mais de signe anormale. Cependant l’origine de ces effets reste peu claire et dans certains cas, leur véracité a été remise en cause. L’ensemble de ces effets semble corrélé à un appauvrissement en porteurs libres où le courant devient limité par la charge d’espace (en anglais SCLC). Pour mettre en lumière la dépendance en contrainte mécanique des taux de capture et d’émission de porteurs libres sur des pièges liés aux défauts cristallins, nous utilisons la technique de spectroscopie d’impédance qui, alliée à la spectroscopie de photoémission, suggère que les pièges en question sont ceux liés aux défauts intrinsèques de surface. La PZR géante n’est observée qu’en dehors du régime stationnaire. Dans le régime stationnaire dans laquelle se situe l’ensemble des études précédentes, bien qu’une PZR géante ne soit pas observée, une PZR de signe anormale est mesurée dans le silicium où une densité de défauts bien choisis a été introduite. Nous démontrons que cette dernière est due à un changement de type de porteur majoritaire induit par la tension appliquée en régime SCLC. Le chapitre 1 aborde l’historique de la PZR jusqu’aux observations de la PZR géante et anomale dans le nano-silicium. Le chapitre 2 présente les modèles physiques de la PZR en régime ohmique. La théorie des SCLCs est ensuite introduite. Le chapitre 3 présente les dispositifs expérimentaux, les procédures de mesure ainsi que les échantillons étudiés. Le chapitre 4 contient les principaux résultats obtenus par la spectroscopie d’impédance. Une PZR géante et nouvel effet de piézo-capacitance sont observés. Une comparaison avec la théorie indique que les dispositifs opèrent dans une régime SCLC en présence de pièges électroniques rapides, et que la PZR géante résulte de la dépendance en contrainte des taux de capture et d’émission de ces pièges. Ceci donne lieu à des changements importants de densités de porteurs hors du régime stationnaire. Ce chapitre se termine sur une discussion, revisitée à la lumière de nos résultats, des effets controversés de PZR géante publiés dans la littérature. Le chapitre 5 traite la mesure de la dépendance en contrainte du « pinning » du niveau de Fermi de surface, réalisée en combinant cartographie Raman et photoémission sur des leviers en silicium statiquement fléchis dont les surfaces sont terminées par une oxyde native. L’observation d’un déplacement du niveau de Fermi de surface pair en contrainte tend à montrer que les défauts intrinsèques de surface (type Pb0) sont à l’origine des effets géants présentés dans le chapitre 4.Le chapitre 6 aborde les mesures en régime stationnaire de PZR du silicium n.i.d. de type n pour laquelle une densité de bi-lacunes de silicium a été introduite. La caractéristique courant-tension montre trois régimes : à basse tension une loi ohmique dominé par les électrons majoritaires ; à des tensions intermédiaires une loi de Mott-Gurney modifiée des trous injectés depuis les contacts p++ ; à haute tension un régime plasma électron-trou. La PZR est déterminée par le porteur majoritaire. A basse tension un comportement du silicium type n est observé (i.e. de signe négatif) tandis qu’aux tensions intermédiaires une PZR similaire à celle du silicium type p est observée (i.e. de signe positive). A haute tension la PZR correspond à la somme de ces, conséquence directe de la présence d’électrons et de trous dans le régime plasma. Le chapitre 7, tout en résumant les conclusions principales de cette thèse développe également les directions futures à explorer. / This thesis presents a study of giant, anomalous piezo-resistance (PZR) in depleted nano-silicon. PZR in bulk silicon is a technologically important phenomenon in which mechanical stress changes the electrical resistivity via a change in the charge carrier effective masses. With continued reductions in device dimensions, it is of interest to explore the PZR of silicon micro- and nano-objects in which giant PZR and PZR of anomalous sign have been reported in recent years. The physical origin of these effects remains unclear and in some cases, even the veracity of the claimed results has been questioned. Some basic elements of the claimed effects are agreed upon, for example they occur in surface depleted nanostructures where transport is described by space charge limited currents (SCLC). In this thesis the details of the stress-dependence of the charge trapping and emission rates at fast electronic traps during SCLC transport in fully depleted silicon-on-insulator is probed using impedance spectroscopy. This, combined with an X-ray photo-electron spectroscopy study of statically deflected silicon cantilevers, strongly suggests that giant, non-steady-state PZR is due to stress-induced changes to hole trapping dynamics at intrinsic interface states. In contrast, under steady-state conditions like those used in all previous studies, giant PZR is not observed even in the presence of interface traps. On the other hand, anomalous, steady-state PZR is observed in defect engineered SCLC devices, and is shown to be the result of a voltage bias induced type change of the majority carrier. In chapter 1 the history of PZR is introduced. Prior reports of giant and anomalous PZR are then discussed. Chapter 2 presents the physical description of the PZR in silicon when transport occurs in the Ohmic regime. Both large-signal and small-signal SCLC transport are then introduced. Chapter 3 introduces the experimental details and the samples used throughout this work. Chapter 4 contains the principal impedance spectroscopy results. Giant, anomalous PZR and a novel piezo-capacitance are observed under non-steady-state conditions in fully-depleted silicon-on-insulator. Comparison of theory and data indicate that the devices operate in the SCLC regime in the presence of fast traps, and that the giant, anomalous PZR results from the stress dependence of the charge capture and emission rates of these traps. This in turn yields large changes of the non-equilibrium charge carrier concentrations. The importance of these observations in clarifying the physical origin, and the veracity of previous reports of steady-state, giant PZR, is discussed. Chapter 5 reports a comparison of Raman and XPS maps on statically deflected silicon cantilevers, providing a spectroscopic measurement of the stress-dependence of the pinned surface Fermi level at natively oxidized (001) silicon surfaces. A simplified analysis of the observed even symmetry of the stress-induced Fermi level shifts suggests that intrinsic interface defects (Pb0) are likely responsible for the giant, anomalous PZR reported in Chapter 4. Chapter 6 reports the DC bias dependence of the PZR in n.i.d. n-type, defect engineered silicon devices. The device characteristic exhibits three regimes; an Ohmic regime at low biases dominated by equilibrium electrons, a modified Mott-Gurney regime at intermediate biases dominated by holes injected from p++ contacts, and an electron-hole plasma regime at high biases. In each case the PZR depends on the majority carrier type; at low biases the usual n-type PZR is observed (i.e. the sign is negative); at intermediate biases it switches to the bulk p-type (i.e. positive) PZR; in the plasma regime, the PZR is a combination of the bulk electron and hole values. The results help shed light on observations of anomalous (i.e. sign reversed) PZR in depleted nano-silicon. Finally, chapter 7 summarizes the conclusions and introduces possible future research directions.

No description available.

Double-sided module exhibits electrical and thermal characteristics that are superior to wire-bonded counterpart. Such structure, however, induces more than twice the thermo-mechanical stress in a single-layer structure. Compressive posts have been developed and integrated into the double-sided module to reduce the stress to a level acceptable by silicon dice. For a 14 mm x 21 mm module carrying 6.6 mm x 6.6 mm die, finite-element simulation suggested an optimal design having four posts located 1 mm from the die; the z-direction stress at the chip was reduced from 17 MPa to 0.6 MPa. / Ph. D.

Miniaturizing circuit size and increasing power density are the latest trends in modern power electronics development. In order to meet the requirements of higher frequency and higher power density in power electronics applications, planar interconnections are utilized to achieve a higher integration level. Power switching devices, passive power components, and EMI (Electromagnetic Interference) filters can all be integrated into planar power modules by using planar metallization, which is a technology involving electrical, mechanical, material, and thermal issues. By processing high dielectric materials, magnetic materials, or silicon chips using compatible manufacturing procedures, and by carefully designing structures and interconnections, we can realize the conventional discrete inductors, capacitors, and switch circuits with planar modules. Compared with conventional discrete components, the integrated planar modules have several advantages including lower profiles, better form factors, and less labor-intensive processing steps. In addition, planar interconnections reduce the wire bond inductive and resistive parasitic parameters, especially for high frequency applications. However, planar integration technology is a packaging approach with a large contact area between different materials. This may result in unknown failure mechanisms in power applications. Extensive research has already been done to study the performance, processing, and reliability of the planar interconnects in thin film structures. The thickness of the thin films used in integrated circuits (IC) or microelectronics applications ranges from the magnitude of nanometers to that of micrometers. In this work, we are interested in adopting planar interconnections to Integrated Power Electronics Modules (IPEM). In Integrated Power Electronics Modules (IPEMs), copper traces, especially bus traces, need to conduct current ranging from a few amps to tens of amps. One of the major differences between IC and IPEM is that the metal layer in IPEMs (normally >75µm) is much thicker than that of the thin films in IC (normally <1µm). The other major difference, which is also a feature of IPEM, is that the planar metallization is deposited on different brittle substrates. In active IPEM, switching devices are in a bare die form with no encapsulation. The copper deposition is on top of the silicon chips and the insulation polyimide layer. One of the key elements for passive IPEM and the EMI IPEM is the integrated inductor-capacitor (LC) module, which realizes equivalent inductors and capacitors in one single module. The deposition processes for silicon substrates and ceramic substrates are compatible and both the silicon and ceramic materials are brittle. Under high current and high temperature conditions, these copper depositions on brittle materials will cause detrimental failure spots. Over the last few years, the design, manufacture, optimization, and testing of the IPEMs has been developed and well documented. Up to this time , the research on failure mechanisms of conventional integrated power modules has led to the understanding of failures centered on wire bond or solder layer. However, investigation on the reliability and failure modes of IPEM is lacking, particularly that which uses metallization on brittle substrates for high current operations. In this study, we conduct experiments to measure and calculate the residual stresses induced during the process. We also, theoretically model and simulate the thermo-mechanical stresses caused by the mismatch of thermal expansion coefficients between different materials in the integrated power modules. In order to verify the simulation results, the integrated power modules are manufactured and subjected to the lifetime tests, in which both power cycling and temperature cycling tests are carried out. The failure mode analysis indicates that there are different failure modes for copper films under tensile or compressive stresses. The failure detection process verifies that delamination and silicon cracks happen to copper films due to compressive and tensile stresses respectively. This study confirms that the high stresses between the metallization and the silicon are the failure drivers in integrated power electronics modules.. We also discuss the driving forces behind several different failure modes. Further understanding of thesefailure mechanisms enables the failure modes to be engineered for safer electrical operation of IPEM modules and helps to enhance the reliability of system-level operation. It is also the basis to improve the design and to optimize the process parameters so that IPEM modules can have a high resistance to recognized failures. / Ph. D.

L'anévrisme de l'aorte abdominale (AAA) est une maladie dégénérative de la paroi vasculaire, actuellement traitée par chirurgie ou par endoprothèse. La diminution de la morbimortalité liée aux traitements et la réparation de ces vaisseaux pathologiques constituent un enjeu majeur de santé publique. L'objectif de ce travail de thèse est d'évaluer l'impact de la culture 3D sur les cellules souches mésenchymateuses (CSM), en particulier sur leur phénotype, leur multipotence, leur capacité à réparer les anévrysmes in vivo et à acquérir un phénotype adapté à la contrainte mécanique qu'elles subissent in vitro. Des conditions optimales de culture 3D dans un hydrogel d'acide hyaluronique préservant la multipotence des CSM in vitro ont ainsi été établies. Sous l'effet de contraintes mécaniques reproduisant celles subies par la paroi aortique in vivo, les CSM 2D et CSM 3D semblent garder une multipotence. Toutefois, dans ces conditions dynamiques, la viabilité des CSM 3D augmente contrairement à celle des CSM 2D. Les résultats montrent également que l'injection des CSM 2D ou 3D, en utilisant un modèle de xénogreffe chez le rat, stabilisent les AAA et améliorent la résistance mécanique de la paroi vasculaire anévrismale. L'étude réalisée chez le rat a été complétée par une approche thérapeutique cellulaire à base de CSM 3D dans le cas de faux anévrysmes chroniques de l'isthme chez le porc. Cette étape conduit à la caractérisation des CSM 3D et la mise au point du modèle expérimental chez le porc, ce qui permet d'envisager une thérapie cellulaire dans ce modèle. Plus généralement, ce travail contribue à la compréhension de la biologie des CSM et à l'amélioration des approches utilisées en thérapie cellulaire et en médecine régénérative. / Abdominal aortic aneurysm (AAA) is a degenarative disease of the arterial wall, which is usually treated with a conventional surgery or an andovascular stent. Due to its high morbidity and mortality, the AAA constitutes a major public health concern. The aim of this thesis is to evaluate the imapct of OD culture of mesenchymal stem cells (MSC), in particular on their phenotype, their multipotency, their ability to repair aneurysms in vivo and to acquire a phenotype suitable to the nechanical stress they support in vitro. Optmal culture conditions in a 3D hydrogel of hyaluronic acid preserving the multipotency of MSC in vitro have been established. Under mechanical effects, reproducing those supported by the aortic wall in vivo, 2D and 3D CSM seem to preserve their multipotency. However, under such dynamic conditions, the viability of 3D CSM increases unlike that of 2D CSM. By using a rat xenograft model, the results also show that injection of 2D or 3D CSM, stabilizes the AAA and improves the mechanical strenght of the aneurysmal vessel wall. The study in rat was supplemented by an evaluation of a therapeutic cell-based approach using 3D CSM in the case of chronic false aneurysms of the isthlus in pigs. This step allowed the characterization of 3D CSM and the development of an experimental model in pigs, which allows to consider cell therapy in this model. More genrally, this work contributes to a better understanding of CSM biology and to an improvement of the approaches used in cell therapy and regenerative medicine.

Statement of problem: With the variety of materials and techniques available, the knowledge of which combination provides frameworks with a better biomechanical behavior and greater fit accuracy is essential for a planning aiming prosthesis longevity. Purpose. To analyze which manufacture technique and material provides a better stress/strain and internal fit correlation. Material and methods. The groups were divided according to framework material and fabrication method: Titanium milled (TiCAD), Zirconia milled (ZrCAD), Cobalt-Chromium alloy milled (CoCrCAD), one-piece casting CoCr alloy (CoCrCAS) and cast and welded CoCr alloy (CoCrWEL). Four external hexagon implants and their respective mini-abutments were placed parallel to each other in a polyurethane model. This model was duplicated, scanned, and a single framework design was created to be used for all milled groups. Casting was done from a wax milled pattern following the same framework design used for the other groups. In preload condition, the strains generated by each framework were recorded by strain gauges fixed around the implants. The internal fit was evaluated by micro-CT scanning. Results. Regarding the uniformity of stress distribution, ZrCAD and CoCrCAD groups presented irregular stress distribution, while TiCAD presented the most uniform distribution. Regarding the internal fit, the TiCAD group presented values significantly better than the others, but not statistically different from ZrCAD. The three manufacturing methods associated to CoCr alloy presented no statistical differences among them. The correlation between the method was statistically significant. Conclusion. The physical and mechanical properties of the complete-arch implant-supported frameworks materials influence the stresses distribution and internal fit. TiCAD presented the best framework stress/strain ratio and internal fit. / Afirmação do problema. Diante da variedade de materiais e técnicas disponíveis, ter o conhecimento de qual combinação proporciona infraestruturas com um melhor comportamento biomecânico e maior precisão na adaptação é essencial para um planejamento visando a longevidade da prótese. Finalidade. Analisar qual material e método de confecção das infraestruturas proporciona a melhor relação tensão/deformação e adaptação interna. Material e métodos. Os grupos foram divididos de acordo com o material e forma de confecção das infraestruturas: fresado em Titânio (TiCAD), fresado em Zircônia (ZrCAD), fresado em Cobalto Cromo (CoCrCAD), CoCr fundido em monobloco (CoCrCAS) e CoCr fundido e com ponto de solda (CoCrWEL). Quatro implantes hexágonos externos e seus respectivos mini-abutments foram colocados paralelos entre si em um modelo de poliuretano. Este modelo foi duplicado, digitalizado e um único desenho de infraestrutura foi criado para todos os grupos fresados. Para fundição, foi utilizado um padrão de cera fresado a partir do projeto usado nos outros grupos. Na condição de pré-carga, as tensões geradas por cada infraestrutura foram registradas por strain gauges fixados ao redor dos implantes. A adaptação interna foi avaliada através de escaneamento por micro-CT. Resultados. Quanto a uniformidade na distribuição das tensões, os grupos ZrCAD e CoCrCAD se apresentaram irregulares, sendo que o grupo TiCAD apresentou distribuição mais uniforme. Quanto à adaptação interna, o grupo TiCAD apresentou valores significativamente melhores que os demais, mas sem diferença estatística em relação ao grupo ZrCAD. As três formas de produção da infraestrutura usando a liga de CoCr não apresentaram diferenças estatísticas entre si. A correlação entre os métodos foi estatisticamente significativa. Conclusão. As propriedades físicas e mecânicas dos materiais de confecção das infraestruturas influenciam na distribuição de estresses e na adaptação interna. O grupo que apresentou a melhor relação tensão/deformação e adaptação foi o grupo TiCAD.

Die vorliegende Arbeit beschreibt die Berechnung und Optimierung von Silicon-On-Insulator-Metal-Oxide-Semiconductor-Field-Effect-Transistors, einschließlich noch nicht in Massenproduktion hergestellter neuartiger Transistorarchitekturen für die nächsten Technologiegenerationen der hochleistungsfähigen Logik-MOSFETs mit Hilfe der Prozess- und Bauelementesimulation. Die neuartigen Transistorarchitekturen umfassen dabei vollständig verarmte SOI-MOSFETs, Doppel-Gate-Transistoren und FinFETs. Die statische und dynamische Leistungsfähigkeit der neuartigen Transistoren wird durch Simulation bestimmt und miteinander verglichen. Der mit weiterer Skalierung steigende Einfluss von statistischen Variationen wird anhand der Oberflächenrauheit sowie der Polykantenrauheit untersucht. Zu diesem Zweck wurden Modelle für die Generierung der Rauheit erarbeitet und in das Programmsystem SIMBA implementiert. Die mikroskopische Rauheit wird mit der makroskopischen Bauelementesimulation kombiniert und deren Auswirkungen auf die Standardtransistoren und skalierte Bauelemente aufgezeigt. Zudem erfolgt eine ausführliche Diskussion der Modellierung mechanischer Verspannung und deren Anwendung zur Steigerung der Leistungsfähigkeit von MOSFETs. Die in SIMBA implementierten Modelle zur verspannungs-abhängigen Änderung der Ladungsträgerbeweglichkeit und Lage der Bandkanten werden ausführlich dargestellt und deren Einfluss auf die elektrischen Parameter von MOSFETs untersucht. Weiterhin wird die Verspannungsverteilung für verschiedene Herstellungsvarianten mittels der Prozess-simulation berechnet und die Wirkung auf die elektrischen Parameter dargestellt. Exponential- und Gaußverteilungsfunktionen bilden die Grundlage, um die mechanische Verspannung in der Bauelementesimulation nachzubilden, ohne die Verspannungsprofile aus der Prozesssimulation zu übernehmen. Darüber hinaus werden die Grenzfrequenzen der Logiktransistoren in Bezug auf die parasitären Kapazitäten und Widerstände und zur erweiterten MOSFET-Charakterisierung dargestellt.

No description available.

La morphogenèse des plantes repose sur deux mécanismes cellulaires : la division et l'élongation. Par ailleurs, la croissance est source de contraintes mécaniques qui affectent les cellules et guident la morphogenèse. Si les contraintes mécaniques influencent l'orientation du plan de division dans les cellules animales, rien n'est prouvé pour les cellules végétales. À l'heure actuelle, la forme de la cellule est proposée comme le facteur principal gouvernant l'orientation du plan dans les divisions symétriques : les cellules se divisent selon un des plans les plus courts. Cette règle géométrique a été validée dans des tissus à croissance ou courbure isotropes, mais les mécanismes moléculaires sous-jacents demeurent inconnus. Dans cette thèse, un pipeline a été mis au point pour analyser les divisions cellulaires dans les différents domaines du méristème apical caulinaire d'Arabidopsis thaliana et questionner l'application de la règle géométrique dans ce tissu. La zone frontière du méristème présente une proportion anormalement basse de plans de division très courts. Des simulations de tissus en croissance, dans lesquelles une règle de division mécanique a été implémentée, ont montrées le même biais sur les orientation des plans, comparé à la règle géométrique. Des ablations laser de quelques cellules de l'épiderme ont également été effectuées afin de perturber localement le patron de contraintes mécaniques. Les résultats montrent que l'orientation du plan des divisions postérieures à cette perturbation suit le nouveau patron de contraintes. Enfin, une nouvelle méthode quantitative, basée sur l'utilisation d'un micro-indenteur, a été mise au point pour quantifier la réponse du cytosquelette, et en particulier des microtubules, aux contraintes mécaniques. Le protocole de compression a été testé et validé sur les mutants katanin et spiral2, dans lesquels la réponse aux contraintes est respectivement faible ou amplifiée. / Morphogenesis during primary plant growth is driven by cell division and elongation. In turn, growth generates mechanical stress, which impacts cellular events and channels morphogenesis. Mechanical stress impacts the orientation of division plane in single animal cells; this remains to be fully demonstrated in plants. Currently, cell geometry is proposed to be the main factor determining plane orientation in symmetric divisions: cell divide along one the shortest paths. This geometrical rule was tested on tissues with rather isotropic shapes or growth and the corresponding molecular mechanism remains unknown, although it could involve tension within the cytoskeleton. To address these shortcomings, we developed a pipeline to analyze cell divisions in the different domains of the shoot apical meristem of Arabidopsis thaliana. We computed the probability of each possible planes according to cell geometry and compared the output to observed orientations. A quarter of the cells did not follow the geometrical rule. Boundary domain was enriched in long planes aligned with supracellular maximal tension lines. Computer simulations of a growing tissue following a division rule that relies on tension gave the most realistic outputs. Mechanical perturbations of local stress pattern, by laser ablations, further confirmed the importance of mechanical stress in cell division. To explore the role of microtubules in this process, we developed a microindenter-based protocol to quantify the cytoskeletal response to mechanical stress. This protocol was tested and validated in the katanin and spiral2 mutants, in which the response to stress is delayed or promoted respectively.

Power transformers are quite costly and essential to provide reliable electrical power system operation. Besides their maintenance or substitution costs, transformer failures must be taken into account, since its will have a large impact on the utility financial health due to the temporary loss of power delivery capability. Concerning transformer failure statistics, investigations carried out in many utilities in the world reveal that the effect of electromechanical stress caused by short-circuit currents is a relevant cause of failure in such equipment and they cause onerous financial damage. Failures caused by mechanical stress due to external short-circuit and due to inrush currents are an important aspect to be considered. The excessive strength caused in transformer conductors/windings due to electromagnetic forces can reduce the transformer lifetime or even cause irreversible damages of them. Therefore, the investigation of the harmful effects caused by transient phenomena becomes imperative. With this in mind, this work aims at investigating the electromagnetic forces and mechanical stresses due to external short-circuit and inrush currents inside the transformer. The studies are carried out using a time domain transformer model based on magnetomotive forces and magnetic reluctances, which allows simulating the transformer transient and steady state behavior regarding the electric, magnetic and mechanical aspects. The methodology is applied in two transformer models operating under rated and short-circuit conditions. Due to the lack of mechanical stress experimental values, a comparative performance analysis is obtained by comparing the simulated results and the well accepted results from finite element program. The results obtained from simulations are evaluated through of the impacts provoked in the variables used to analyze the mechanical stresses which occur in the transformers due to short-circuit and inrush currents. From the mechanical stress calculated it is presented a methodology that establishes a correlation between the phenomena here investigated and the impact in the transformer lifetime. This can assist, previously, in the reduction of the number of unexpected failures and, consequently, in financial damages. / Transformadores de potência são dispositivos fundamentais para a operação de sistemas de potência e têm um peso significativo no custo total de uma instalação. Além dos custos de manutenção e substituição, as falhas nos transformadores devem ser levadas em consideração, no sentido de manter tanto a continuidade do fornecimento de energia como os padrões mínimos de qualidade estabelecidos para o insumo energia elétrico, aliado ao equilíbrio financeiro das empresas. Estudos realizados por concessionárias de diversos países deixam evidentes os enormes prejuízos financeiros das empresas do setor elétrico, devido às falhas mecânicas em transformadores. Defeitos provocados pelos esforços mecânicos decorrentes de correntes de curtos-circuitos passantes e correntes de inrush se constituem como importantes causadores de falhas em transformadores. Os esforços adicionais causados nos condutores/bobinas de transformadores, devido ao acréscimo das forças eletromagnéticas resultantes, podem, em alguns casos, vir a reduzir a vida útil de transformadores ou até mesmo provocar a sua perda total. A investigação dos efeitos danosos causados pelos fenômenos mencionados, portanto, torna-se imperativa. Nessa perspectiva, a presente tese tem por objetivo investigar as forças eletromagnéticas e o estresse mecânico resultantes de cor- rentes de curtos-circuitos passantes e correntes de energização que se estabelecem no interior de transformadores. Para alcançar tal propósito, é empregada uma modelagem computacional no domínio do tempo baseada em forças magnetomotrizes e relutâncias magnéticas. Este modelo permite simulações de fenômenos de regime transitório e per- manente, além de possibilitar o acesso às grandezas elétricas, magnéticas e mecânicas. A metodologia é aplicada a dois modelos de transformadores operando em condições nominais e em curto-circuito. Devido às dificuldades de se encontrar publicações que contenham valores de referência para validar a metodologia proposta, os resultados são comparados aos correspondentes obtidos de um tradicional e bem aceito pacote do Método dos Elementos Finitos. Os resultados oriundos das simulações são avaliados em termos do grau de impacto que é provocado nas grandezas utilizadas para aferir os esforços mecânicos a que fica submetido um transformador, quando de sua energização ou na ocorrência de curtos-circuitos passantes. A partir dos esforços mecânicos determinados é apresentada uma proposta de metodologia que estabelece uma correlação entre os fenômenos aqui estudados e o impacto sobre a vida útil de transformadores, que pode auxiliar, de maneira preditiva, na redução do número de falhas inesperadas e, em conseqüência, nos prejuízos financeiros decorrentes. / Doutor em Ciências