Le futur réseau mobile 5G est prévu pour être déployé à partir de 2020, dans un contexte d’évolution exponentielle du marché de la téléphonie mobile et du volume de données échangées. La 5G servira de levier à des applications révolutionnaires qui permettront l’émergence du monde connecté. Dans ce but, plusieurs spécifications pour le réseau sont attendues même si aucun standard n’est encore défini et notamment une faible latence, une consommation d’énergie réduite et un haut débit de données. Les bandes de fréquences traditionnellement utilisées dans les réseaux mobiles ne permettront pas d’atteindre les performances visées et plusieurs bandes de fréquences millimétriques sont à l’étude pour créer un spectre complémentaire. Cependant, ces bandes de fréquence millimétriques souffrent d’une forte atténuation dans l’air et dans les matériaux de construction. Plusieurs techniques vont être implémentées pour outrepasser ces limitations dans les zones urbaines denses comme le backhauling, FD-MIMO et beamforming phased array. Ces techniques entraînent l’utilisation d’un grand nombre de transmetteurs dans les stations de bases et dans les dispositifs de l’utilisateur final. La technologie CMOS offre d’indéniables avantages pour ce marché de masse tandis que la technologie FD-SOI offre des performances et fonctionnalités additionnelles. L’amplificateur de puissance est le bloc le plus critique à concevoir dans un transmetteur et consomme le plus d’énergie. Afin d’adresser les challenges de la 5G, plusieurs spécifications concernant la puissance consommée, la linéarité et le rendement sont attendues. Les variations de l’environnement dans les beamforming phased array et le contexte industriel nécessitent des topologies robustes alors qu’une reconfigurabilité au niveau de l’amplificateur de puissance est bénéfique dans le cas de circuits adaptatifs. Cette thèse adresse ces challenges en explorant la conception d’un amplificateur de puissance reconfigurable et robuste pour des applications 5G en intégrant des techniques de design spécifiques et en mettant en avant les avantages de la technologie 28nm FD-SOI pour la reconfigurabilité. / The 5G future mobile network is planned to be deployed from 2020, in a context of exponential mobile market and exchanged data volume evolution. The 5G will leverage revolutionary applications for the advent of the connected world. For this purpose, several network specifications are expected notably low latency, reduced power consumption and high data-rates even if no standard is yet defined. The frequency bands traditionally used for mobile networks will not permit the needed performances and several mmW frequency bands are under study to create a complementary frequency spectrum. However, these mmW frequency bands suffer from large attenuation inbuilding material and in free-space. Therefore, several techniques will be implemented to tackle these limitations indense urban areas like backhauling, FD-MIMO and beamforming phased array. This is leading to a large number of transceivers for base stations and end-user devices. CMOS technology offers undeniable advantages for this mass market while FD-SOI technology offers additional features and performances. The power amplifier is the most critical block to design in a transceiver and is also the most power consuming. To address the 5G challenges, several specifications concerning power consumption, linearity and efficiency are expected. The environment variations inbeamforming phased array and the industrial context drive the need for robust topologies while power amplifier reconfigurability is benefic in a context of adaptive circuits. This thesis addresses these challenges by exploring the conception of a robust and reconfigurable power amplifier targeting 5G applications while integrating specific design techniques and taking advantage of 28nm FD-SOI CMOS technology features for reconfigurability purposes.

La pénétration importante d’objets communicants dans notre vie quotidienne révèle des défis important quant à leur développement. Notamment l’explosion d'applications multimédia sans fil pour l'électronique grand public fait de la consommation électrique une métrique clef dans la conception des dispositifs portables multimodes sans fil. Les émetteurs-récepteurs conventionnels proposent des performances fixes et sont conçus pour respecter ces hautes performances dans toutes les conditions de communication sans fil. Cependant, la plupart du temps, le canal n'est pas dans le pire cas de communication et ces émetteurs-récepteurs sont donc surdimensionnés. En connaissant l’état du canal en temps réel, de tels dispositifs pourraient s'adapter aux besoins et réduire significativement leur consommation électrique. Le défi consiste à respecter la Qualité de Service , ou Quality of Service (QoS) en anglais, imposée par les différents standards de communication. Afin de rester compétitifs, les émetteurs-récepteurs adaptatifs doivent donc proposer une même QoS que ceux déjà disponibles sur le marché. Ainsi, ni la portée de communication ni le temps de réponse ne peuvent être dégradés.Basé sur ces exigences, cette thèse propose une technique d'adaptation pour la conception d'un récepteur reconfigurable qui fonctionne à la limite des performances nécessaires pour recevoir le signal utile. Ainsi, le récepteur proposé est toujours au minimum de consommation électrique tout en garantissant la bonne QoS. Ceci permet alors de multiplier la durée de vie de sa batterie par un facteur 5.Cette adaptabilité est démontrée ensuite côté circuit par la conception d'un LNA (Amplificateur Faible Bruit) dont les performances sont reconfigurables. En effet, en tant que premier élément de la chaîne de réception, le LNA limite le récepteur en termes de sensibilité. Ces travaux exploitent la technologie FD-SOI (Fully Depleted Silicon-On-Insulator) pour d’une part, réduire la consommation du LNA et d’autre part, ajouter de la reconfigurabilité à ce même circuit. / Communicating objects are inviting themselves into daily life leading to digitization of the physical world. This explosion of multimedia wireless applications for consumer electronics makes the power consumption a key metric in the design of multi-mode wireless portable devices. Conventional transceivers have fixed performances and are designed to meet high performances in all wireless link conditions. However, most of the time, the channel of communication is not at worst case and these transceivers are therefore over specified. Being aware of the channel link conditions would allow such devices to adapt themselves and to reduce significantly their power consumption. Therefore, the challenge is to propose a QoS (Quality of Service) in terms of communication range, response time as instance, equivalent to industrial modules with a reduced overall power consumption.To address this purpose, this thesis proposes a design strategy for the implementation of adaptive radio-frequency receiver (Rx) modules. Hence the Rx front end achieves the correct QoS for various scenarii of communications with a minimum of power consumption.As a proof of concept, the adaptive approach is demonstrated with the design of a tunable LNA (Low Noise Amplifier). As the first element of the receiver chain, the LNA limits the receiver in terms of sensitivity and is therefore a good candidate to perform reconfiguration. The body biasing of the FD-SOI (Fully Depleted Silicon-On-Insulator) technology is first exploited to reduce the power consumption of a circuit and then as an opportunity to perform circuit tunability.

La culture numérique adolescente et l’usage des réseaux sociaux et des messageries instantanées pour une pratique d’expression de soi, suscitent depuis de nombreuses années un vif intérêt pluridisciplinaire. L’expression de soi en ligne est une activité qui suscite chez les adolescentes un véritable engouement. Cette recherche privilégie une approche interactionniste inscrite dans le champ de la psychologie sociale et du développement. Elle se propose d’appréhender le sens accordé par les adolescentes à leur pratique d’expression de soi. Nous analysons comment le développement identitaire et les représentations de soi s’associent aux pratiques d’expression de soi, au sein d’une socialisation horizontale. L’approche a été réalisée auprès de 47 adolescentes âgées de 11 à 15 ans, toutes utilisatrices des réseaux sociaux et des messageries instantanées. Cinq outils ont été utilisés pour recueillir les données : un questionnaire appréhendant les pratiques d’internet, un exercice de "Qui suis-je ?" (Rodriguez-Tomé & Bariaud, 1980), l’Echelle de Conscience de Soi Révisée (Pelletier & Vallerand, 1990), l’Echelle Toulousaine d’Estime de Soi (Oubrayrie, De Léonardis, Safont, 1994) et l’Echelle du Développement Identitaire de Groningen constitué d’un entretien semi-directif (Bosma, 1985, 1994 ; Lannegrand-Willems, 2008). Les résultats indiquent que l’expression de soi des adolescentes répond à trois principaux besoins interdépendants : 1/ maintenir le contact avec les pairs et observer leurs pratiques ; 2/ recueillir l’approbation des pairs au moyen des publications ; 3/ écrire pour soi-même et laisser une trace organisée de son vécu. Les participantes qui ont des représentations de soi sociales et publiques élevées (59,6%) sont celles qui s’expriment régulièrement sur la toile en orientant le contenu de leurs écrits sur le soi. Elles désirent recueillir l’avis des pairs et laisser une trace de leur histoire. L’estime de soi et l’engagement identitaire sont associés à la présence de renforcements positifs par les pairs sur les publications, renforcements essentiels pour la socialisation horizontale. Les thématiques du développement identitaire et du soi, de l’expression de soi et de la relation amicale sont étroitement reliées, dans une dynamique d’interstructuration et d’intersubjectivité. Cette recherche, à caractère exploratoire, en raison des rares travaux francophones dans le domaine et de l’échantillon circonscrit, est néanmoins prometteuse et invite à engager des recherches longitudinales et comparatives. / Research interest is high in adolescents’ self-expression online, digital culture and the use of Social Network sites and instant messaging. Practicing self-expression online provokes a girls’ infatuation. Based on developmental and interactionist approaches, the aim of this study is to analyze on the one hand, the meaning of teenage girls’ self-expression and self-disclosure online, and on the other hand, attempt to understand how topics of adolescence like identity development, self-concepts and self-expression online can be linked at the heart of the horizontal socialization. Our sample included 47 teenage girls, aged between 11 to 15 years. All of them are using Internet, Social Network Sites and instant messaging. Five tools were used to collect the data: a questionnaire regarding the uses of Internet, an open-ended question « Who Am I? » (Rodriguez-Tomé & Bariaud, 1980), the Self-Consciousness Revised Scale (Pelletier & Vallerand, 1990), the Toulouse Scale of Self-Esteem (Oubrayrie, De Léonardis, Safont, 1994), and the Groningen Identity Developmental Scale including a semi structured interview (Bosma, 1985, 1994; Lannegrand-Willems, 2008). According to our results, self-expression responds to three interrelated needs of teenage girls: 1/ to maintain contact with peers and to observe theirs practices; 2/ to obtain the approval of peers through online personal publications; 3/ to write their history for themselves. Girls which have high levels of social and public self-concepts are regularly practicing self-expression online (59.6%). Publication contents are focused on themselves. These girls want peer comments and approval, and write a part of their personal story for themselves. High levels of self-esteem and identity commitment are related to peer positive reactions on publications. Topics of identity development and self-concepts are closely related with self-expression online and peer relationships. Our analysis underlines an intersubjective balance between self and other. This research is exploratory in nature because of the lack of French studies in this area, and the limited sample. Nevertheless, it provides longitudinal and comparative promising perspectives.

Este trabalho tem como objetivo estudar o ponto invariante com a temperatura (ZTC - Zero Temperature Coefficient) para transistores com estrutura SOI UTBB (Silicon-On-Insulator Ultra-Thin Body and BOX) nMOSFETs em relação à influência do plano de terra (GP-Ground Plane) e da espessura do filme de silício (tSi). Este estudo foi realizado nas regiões linear e de saturação, por meio da utilização de dados experimentais e de um modelo analítico. Parâmetros elétricos, como a tensão de limiar e a transcondutância foram analisados para verificar a influência do plano de terra e da espessura de filme de silício (tSi), e para estudar a polarização, entre porta e fonte, que não varia com a temperatura (VZTC). Foram utilizados dispositivos com (concentração de 1018 cm-3) e sem (concentração de 1015 cm-3) plano de terra em duas lâminas diferentes, uma com 6 nm de tSi e outra com 14 nm de tSi. Foi observado, que a presença do GP aumenta o valor de VZTC, devido ao fato do GP eliminar os efeitos de substrato no dispositivo aumentando a tensão de limiar do mesmo, e este, é diretamente proporcional a VZTC. O VZTC mostrou ser inversamente proporcional com a diminuição do tSi. Todos os resultados experimentais de VZTC foram comparados com o modelo. Foi observada uma boa concordância entre os VZTC de 25 ºC a 150 ºC, sendo que o desvio padrão foi menor que 81 mV em todos os casos estudados. Para se observar o efeito de substrato na tensão de limiar foi utilizado um modelo analítico que leva em consideração o efeito da queda de potencial no substrato, o efeito de confinamento quântico e parâmetros do dispositivo a ser modelado. O VZTC mostrou ser maior na região de saturação devido ao aumento da transcondutância e da polarização entre dreno e fonte (VDS), em ambos dispositivos (com e sem GP), chegando a ter um aumento de 360 mV em alguns casos. / This work aims to study the zero temperature coefficient point (ZTC) for transistors with SOI UTBB nMOSFETs (Silicon-On-Insulator Ultra-Thin Body and BOX) structure regarding the influence of the ground plane (GP) and the thickness of the silicon film (tSi). This study was realized in the linear and saturation region, by the use of experimental data and an analytical model. Electrical parameters such as threshold voltage and transconductance were analyzed with the objective of verifying the influence of the ground plane and silicon film thickness (tSi) in the same, and to analyze the polarization, between gate and source, that have zero influence of the temperature (VZTC). Were used devices with (concentration 1018 cm-3) and without (concentration 1015 cm-3) ground plane on two different wafers, with 6 nm tSi and the other with 14 nm tSi. It was observed that the presence GP increases the value of VZTC, because GP eliminates substrate effects and as consequence, the threshold voltage of the device increase and this is directly proportional to VZTC. The VZTC showed to be inversional proportional to the reduction of tSi. All experimental results were compared with a simple model for VZTC and were observed a good convergence between the results, for VZTC from 25 ºC to 150 ºC, and the biggest standard error observed in all the devices was 81 mV. To observe the effect of substrate on the threshold voltage, was used an analytical model that takes into account the effect of potential drop on the substrate, the effect of quantum confinement and the device parameters to be modeled. The VZTC show to be higher in the saturation region, due the increase of transconductance and the polarization between drain and source (VDS), in both devices (with and without GP), reaching an increase of 360 mV in some cases.

No Alcibíades Primeiro, Sócrates diz que o conhecimento de si (gnôthi seauton) corresponde à sabedoria. Esse conhecimento é entendido como condição essencial para o engajamento na vida pública, e está ligado ao discernimento do bem e do mal, podendo ser entendido como uma das condições para o cuidado de si(epiméleia heautou). O gnôthi seauton, na filosofia platônica, diz respeito a um processo de formação. Neste trabalho, trataremos desse processo, sobremaneira, a partir da relação entre as noções de cuidado de si e conhecimento de si. Platão entende que não cabe aos mestres de virtude ou aos dirigentes políticos o papel formativo. Nem mesmo os retóricos, os parentes, o oráculo, os pedagogos competentes podem ensinar aos jovens o que eles realmente são. Se um governo de si é possível, o jovem deve ser o sujeito. A virtude não é aprendida da mesma maneira que se dá a transmissão de um conteúdo pedagógico. Ela só pode ser alcançada de outro modo: a partir de um exercício de si sobre si mesmo. Dessa maneira, a verdadeira função do mestre de virtude, função de Sócrates nos diálogos platônicos, não é a transmissão de um saber, e sim convencer cada um a cuidar da virtude, a aperfeiçoar-se. Dito de outro modo, no Primeiro Alcibíades, o processo formativo não consiste na transmissão de um conteúdo. A educação resulta da nova disposição alcançada pelo interlocutor por intermédio de Sócrates. / Dans l\'Alcibiade Majeur Socrate dit que «la connaissance de soi» (gnôthi seautón) correspond à la sagesse. Cette connaissance est comprise comme condition essentielle pour la participation dans la vie publique, et est lié au discernement du bien et du mal, elle peut être considéré comme l\'une des conditions pour \"soin de soi\" (epimeleia heautou). Gnôthi seautón se rapporte à un processus de formation. Dans ce travail, nous allons traiter ce processus, particulièrement, de la relation entre les notions de «soin de soi» et «connaissance de soi». Platon estime qu\'il n\'incombe pas aux maîtres de la vertu ou aux dirigeants politiques le rôle formateur. Pas même les rhéteurs, les parents, l\'oracle, les pédagogues compétents peuvent enseigner aux jeunes ce qu\'ils sont réellement. Si un gouvernement de soi est possible, le jeune doit être le sujet. La vertu n\'est pas apprise de la même manière que se donne la transmission d\'un contenu éducatif. Elle ne peut être atteinte d\'une autre manière: à partir d\'un exercice de soi sur soi-même. Ainsi, la véritable fonction du maître de vertu, fonction de Socrate dans les dialogues platoniciens, n\'est pas la transmission du savoir, mais pour convaincre chacun de prendre soin de la vertu, à l\'améliorer. En d\'autres termes, dans l\' Alcibiade, le processus de formation ne consiste pas à la transmission du contenu. L\'éducation résulte de la nouvelle disposition atteinte par l\'interlocuteur par l\'intermédiaire de Socrate.

Este trabalho tem como objetivo investigar o comportamento de transistores SOI de porta tripla com óxido de porta de alta constante dielétrica e eletrodo de porta de metal. Inicialmente estudou-se a aplicação dos métodos de extração de parâmetros através de curvas da capacitância, previamente desenvolvidos para estruturas SOI planares, em dispositivos de porta tripla com óxido de porta de háfnio (HfO2) e porta de metal com nitreto de titânio (TiN). Foram utilizados dispositivos com grandes dimensões, onde a influência das portas laterais pode ser desprezada, apresentando desta forma, um comportamento similar aos dispositivos com geometria planar. Simulações numéricas tridimensionais seguidas de medidas experimentais validam a utilização desses métodos em estruturas de múltiplas portas com grande largura de canal. A capacitância também foi utilizada para se analisar a influência que o efeito de canto exerce sobre estas estruturas de múltiplas portas. Na seqüência, foi investigado o impacto que a variação da espessura da porta de metal TiN causa nas características elétricas dos transistores SOI de porta tripla com óxido de porta de silicato de óxido de háfnio (HfSiO). Parâmetros como tensão de limiar, função de trabalho, mobilidade, cargas de interface assim como as características analógicas foram analisadas. Os resultados indicaram que camadas de TiN mais finas são mais atrativas, apresentando menor tensão de limiar e armadilhas de interface, assim como um aumento na mobilidade e no ganho intrínseco do transistor. Contudo uma maior corrente de fuga pelo óxido de porta é vista nestes dispositivos. Juntamente com esta análise, o comportamento de transistores de porta tripla com dielétrico de porta de silicato de óxido de háfnio nitretado (HfSiON) também foi estudado, onde observou-se um maior impacto nas cargas de interface para o óxido de háfnio nitretado. Contudo, o mesmo é capaz de reduzir a difusão de impurezas até o óxido de silício (SiO2) interfacial com o canal de silício. Finalmente transistores de porta tripla com diferentes composições de estrutura de porta foram estudados experimentalmente, onde uma camada de óxido de disprósio (Dy2O3) foi depositada entre o silicato de óxido de háfnio (HfSiO) e a porta de metal TiN. Observou-se uma redução na tensão de limiar nos dispositivos com o óxido de disprósio assim como uma variação na tensão de faixa plana. Em resumo, quando a camada de óxido de disprósio foi depositada dentro da porta de metal TiN, uma melhor interface foi obtida, assim como uma maior espessura de óxido efetivo, indicando desta forma uma menor corrente de fuga. / The main goal of this work is to investigate the behavior of SOI triple gate transistors with high dielectric constant gate oxide and metal gate material. Initially it was studied the application of process parameters extraction methods through capacitance curves, developed previously for planar SOI structures, in the triple-gate devices with hafnium gate oxide (HfO2) and metal gate of titanium nitride (TiN). Devices with larger dimensions were used, where the lateral gate influence can be neglected, presenting a planar behavior. Three-dimensional numerical simulations followed by experimental measurements validated the methods used in multiple-gate structures with wide channel width. The capacitance was also used in order to analyze the corner effect influence under these structures. In sequence, it was investigated the impact that the metal gate TiN thickness variation cause on the electric characteristics on the SOI triple gate transistors with silicate of hafnium oxide (HfSiO) as gate oxide. Beyond threshold voltage, work function, mobility, interface trap density and analog characteristics were analyzed. The results showed that thinner TiN are highly attractive, showing a reduction on the threshold voltage and trap density, an improved mobility and of the intrinsic gain of the transistor. However, an increase on the leakage current is observed in these devices. Together with this analyzes the behavior of triple gate transistors with gate dielectric of silicate of hafnium oxide nitrated (HfSiON) was also studied, where for the HfSiON a higher interface trap density impact was observed. Nevertheless it is efficient on the reduction impurity diffusion to cross until the silicon oxide (SiO2) that interfaces with the silicon channel. Finally, triple gate transistors with different gate stacks were experimentally studied, where a dysprosium oxide layer (Dy2O3) was deposited between the silicate of hafnium oxide (HfSiO) and the TiN metal gate. We observed a reduction in the threshold voltage of theses devices with dysprosium oxide as well as a variation of flatband voltage. In summary, when the dysprosium oxide layer was deposited inside the TiN metal gate, a better interface was obtained, as well as a higher effective oxide thickness, resulting in a lower leakage current.

Este trabalho apresenta o estudo do comportamento da mobilidade de portadores em transistores SOI nMOS e pMOS avançados planares e de porta tripla através de simulações tridimensionais e resultados experimentais. Devido à sua estrutura física, os transistores de porta tripla apresentam duas mobilidades, uma referente ao canal de condução na porta superior (orientação cristalográfica ) e uma referente ao canal de condução das portas laterais (orientação cristalográfica ). Inicialmente foi feito um estudo comparativo dos métodos de extração da mobilidade através de simulações numéricas tridimensionais dos dispositivos de porta tripla, tendo como objetivo analisar o comportamento dos diferentes métodos de extração da mobilidade efetiva de portadores e separação das mobilidades da porta superior e laterais, para fazer a escolha dos métodos mais adequados para aplicação nos resultados experimentais. De modo geral todos os métodos estudados sofrem maior influência com a redução do comprimento de canal devido aos efeitos da resistência série e de canal curto. Dentre os métodos estudados o que apresenta maior influência com a redução do comprimento de canal é o por gm,máx que apresentou maiores erros. E o método por Y-function apresentou o melhor comportamento com a redução do comprimento de canal, seguido pelo método Split C-V. Para os dispositivos com comprimento de canal acima de 0,5micro metros o maior erro encontrado foi de 13% para os métodos McLarty e Y-function. Neste caso os métodos por gm,máx e Split C-V apresentaram melhores resultados. Com relação à largura de canal os métodos por gm,máx e Split C-V tiveram os melhores resultados com a utilização de dispositivos de porta tripla. Foi observado que para dispositivos com Wfin maior que 0,7 micro metros os maiores erros encontrados foram de 11,2 % para o método Y-function e 10% para o método por gm,máx. No entanto, para dispositivos com Wfin menores que 0,7 micro metros os métodos Y-function e McLarty apresentaram os piores resultados chegando a quase 50% de erro para o dispositivo mais estreito (Wfin = 50nm). Quanto aos métodos de separação das mobilidades todos os métodos estudados apresentaram bons resultados e se mostraram eficientes mostrando um erro máximo de 11,3%. O que os diferencia é o grau de dificuldade de aplicação. Posteriormente foram realizadas medidas experimentais a fim de possibilitar o entendimento dos fenômenos físicos relacionados à mobilidade de portadores. Primeiramente foram analisados os dispositivos de porta tripla em temperatura ambiente e em baixa temperatura para dispositivos nMOS e pMOS. O estudo foi feito em dispositivos com diferentes comprimentos e larguras de canal a fim de analisar os efeitos das dimensões nesta tecnologia. Em seguida são apresentados os resultados para dispositivos SOI avançados planares em temperatura ambiente com variação da largura de canal e com aplicação de tensão no substrato, com objetivo de analisar o comportamento da mobilidade na primeira interface (óxido de porta/canal) e na segunda interface (óxido enterrado/canal). Esse estudo foi realizado com a aplicação de dois diferentes métodos de extração da mobilidade. Por fim foi feito um estudo de um novo método para extração da mobilidade de portadores chamado de magnetoresistência que consiste na aplicação de um campo magnético perpendicular ao fluxo de corrente do transistor. O uso do campo magnético altera a resistividade do canal, de onde é possível extrair a mobilidade. Foram apresentados os resultados com a utilização deste método para os dispositivos de porta tripla tipo nMOS com variação do comprimento de canal (90 a 910 nm) e da temperatura (200K a 77K). / This work presents a study of the carrier mobility behavior in planar and triple gate advanced SOI nMOS and pMOS transistors through three-dimensional simulations and experimental results. Due to its physical structure, the triple gate transistors presents two mobilities, one referring to the conduction channel on the top gate (crystallographic orientation ) and one referring to the conduction channel on the lateral gates (crystallographic orientation ). Initially, a comparative study of the mobility extraction methods through three-dimensional numerical simulations of the triple gate devices was made, with the purpose to analyze the behavior of different effective carrier mobility and separation of top and lateral gates mobilities extraction methods, to make the choice of the suitable methods for application in the experimental results. From a general way, all the studied methods suffer higher influence with channel length reduction due to short channel and the series resistance effects. Among the studied methods, the method by gm,max presents the higher influence with the channel length reduction that shows the bigger errors. The Y-function method presents the best behavior with the channel length reduction, followed by Split C-V method. For the devices with channel length above 0.5 mirco meters the highest error founded was 13% for McLarty and Y-function methods. In this case the gm,max and Split C-V methods presented the better results. With regard to the channel width the Split C-V and gm,max methods presented the better results with the use of triple gate devices. It was observed that for devices with Wfin higher than 0.7 mirco meters the highest errors founded were 11.2% for the Y-function method and 10% for gm,max method. Nevertheless, for devices with Wfin smaller than 0.7 micro meters the Yfunction and McLarty methods presented the worst results arriving almost 50% of error for the narrowest device (Wfin = 50nm). With regard to mobilities separation methods all the studied methods presented good results and had shown efficient showing a maximum error of 11.3%. The difference between them is the application difficulty level. After that, experimental measures were made in order to make possible the understanding of physical phenomena related to carrier mobility. Firstly, it was analyzed the triple gate devices at room and low temperatures for nMOS and pMOS devices. The study was done in devices with different channel lengths and widths in order to analyze the dimensions effects in this technology. After that it was present the results for planar advanced SOI devices at room temperature with variation of channel width and with the application of back gate voltage, with the purpose to analyze the behavior of the mobility in the first interface (gate oxide/channel) and second interface (buried oxide/channel). This study was done with the application of two different mobility extraction methods. Finally a study of a new mobility extraction method called magnetoresistance was made; this method consists in a perpendicular magnetic field application to transistor current flow. The uses of magnetic field change the channel resistivity, where it is possible to extract the mobility. It was presented results with the use of this method for triple gate nMOS devices with variation of channel length (90 a 910 nm) and temperature (200K to 77K).

Este trabalho tem como objetivo investigar o comportamento de transistores SOI de porta tripla com óxido de porta de alta constante dielétrica e eletrodo de porta de metal. Inicialmente estudou-se a aplicação dos métodos de extração de parâmetros através de curvas da capacitância, previamente desenvolvidos para estruturas SOI planares, em dispositivos de porta tripla com óxido de porta de háfnio (HfO2) e porta de metal com nitreto de titânio (TiN). Foram utilizados dispositivos com grandes dimensões, onde a influência das portas laterais pode ser desprezada, apresentando desta forma, um comportamento similar aos dispositivos com geometria planar. Simulações numéricas tridimensionais seguidas de medidas experimentais validam a utilização desses métodos em estruturas de múltiplas portas com grande largura de canal. A capacitância também foi utilizada para se analisar a influência que o efeito de canto exerce sobre estas estruturas de múltiplas portas. Na seqüência, foi investigado o impacto que a variação da espessura da porta de metal TiN causa nas características elétricas dos transistores SOI de porta tripla com óxido de porta de silicato de óxido de háfnio (HfSiO). Parâmetros como tensão de limiar, função de trabalho, mobilidade, cargas de interface assim como as características analógicas foram analisadas. Os resultados indicaram que camadas de TiN mais finas são mais atrativas, apresentando menor tensão de limiar e armadilhas de interface, assim como um aumento na mobilidade e no ganho intrínseco do transistor. Contudo uma maior corrente de fuga pelo óxido de porta é vista nestes dispositivos. Juntamente com esta análise, o comportamento de transistores de porta tripla com dielétrico de porta de silicato de óxido de háfnio nitretado (HfSiON) também foi estudado, onde observou-se um maior impacto nas cargas de interface para o óxido de háfnio nitretado. Contudo, o mesmo é capaz de reduzir a difusão de impurezas até o óxido de silício (SiO2) interfacial com o canal de silício. Finalmente transistores de porta tripla com diferentes composições de estrutura de porta foram estudados experimentalmente, onde uma camada de óxido de disprósio (Dy2O3) foi depositada entre o silicato de óxido de háfnio (HfSiO) e a porta de metal TiN. Observou-se uma redução na tensão de limiar nos dispositivos com o óxido de disprósio assim como uma variação na tensão de faixa plana. Em resumo, quando a camada de óxido de disprósio foi depositada dentro da porta de metal TiN, uma melhor interface foi obtida, assim como uma maior espessura de óxido efetivo, indicando desta forma uma menor corrente de fuga. / The main goal of this work is to investigate the behavior of SOI triple gate transistors with high dielectric constant gate oxide and metal gate material. Initially it was studied the application of process parameters extraction methods through capacitance curves, developed previously for planar SOI structures, in the triple-gate devices with hafnium gate oxide (HfO2) and metal gate of titanium nitride (TiN). Devices with larger dimensions were used, where the lateral gate influence can be neglected, presenting a planar behavior. Three-dimensional numerical simulations followed by experimental measurements validated the methods used in multiple-gate structures with wide channel width. The capacitance was also used in order to analyze the corner effect influence under these structures. In sequence, it was investigated the impact that the metal gate TiN thickness variation cause on the electric characteristics on the SOI triple gate transistors with silicate of hafnium oxide (HfSiO) as gate oxide. Beyond threshold voltage, work function, mobility, interface trap density and analog characteristics were analyzed. The results showed that thinner TiN are highly attractive, showing a reduction on the threshold voltage and trap density, an improved mobility and of the intrinsic gain of the transistor. However, an increase on the leakage current is observed in these devices. Together with this analyzes the behavior of triple gate transistors with gate dielectric of silicate of hafnium oxide nitrated (HfSiON) was also studied, where for the HfSiON a higher interface trap density impact was observed. Nevertheless it is efficient on the reduction impurity diffusion to cross until the silicon oxide (SiO2) that interfaces with the silicon channel. Finally, triple gate transistors with different gate stacks were experimentally studied, where a dysprosium oxide layer (Dy2O3) was deposited between the silicate of hafnium oxide (HfSiO) and the TiN metal gate. We observed a reduction in the threshold voltage of theses devices with dysprosium oxide as well as a variation of flatband voltage. In summary, when the dysprosium oxide layer was deposited inside the TiN metal gate, a better interface was obtained, as well as a higher effective oxide thickness, resulting in a lower leakage current.

L’intégration des communications optiques sur puce offre de vastes promesses en termes de performances et de réduction de la puissance consommée, les canaux optiques ne souffrant pas des nombreuses limitations des canaux métalliques. De plus, l’information codée optiquement permet d’atteindre des débits de données élevés par le biais du multiplexage en longueur d’onde. Afin de conserver la compatibilité avec les composants électroniques, les communications et composants optiques doivent s’intégrer dans la filière silicium. Cependant, ce dernier matériau ne permet pas d’envisager la réalisation de certaines fonctions optiques, en particulier la source laser. D’autres matériaux doivent ainsi être intégrés pour suppléer au silicium. Mes travaux de thèse portent sur l’intégration de nanotubes de carbone sur plate-forme silicium pour la photonique. Dans ces travaux, le potentiel des nanotubes de carbone pour la réalisation de sources optiques intégrées est exploré. Dans un premier temps, je proposerai des pistes de compréhension de l’apparition du gain optique dans les nanotubes de carbone semiconducteurs par analyse des temps de vie des excitons, mesurés en spectroscopie pompe-sonde. Ces temps de vie sont sensiblement rallongés lorsque la centrifugation des nanotubes de carbone, au cours de l’extraction, est poussée à des vélocités et des temps plus longs. Une explication envisagée est la réduction du nombre de défauts à la surface des nanotubes, ces défauts se comportant comme des centres de recombinaison non-radiatifs. D’autre part, une méthode efficace d’intégration des nanotubes de carbone sur guide d’onde silicium a été proposée. Cette méthode robuste et permet d’observer le couplage de la photoluminescence des nanotubes de carbone avec le mode optique du guide d’onde. Afin d’obtenir une interaction exaltée entre mode optique et nanotube de carbone, le couplage entre les nanotubes et différentes cavités photoniques, incluant microdisques, cavités Fabry-Pérot et micro-résonateurs en anneau, a été étudié. L’emploi en particulier de résonateurs en anneau permet d’observer la structuration de la photoluminescence des nanotubes de carbone par les modes de résonance de l’anneau. Différentes configurations ont été étudiées afin de compléter la compréhension des mécanismes de couplage : micro-photoluminescence, photoluminescence guidée et photoluminescence intégrée. / On-chip optical communication may increase drastically performances and consumption of communication systems. Indeed, optical channels do not face limitations that metallics interconnects do. Even better would be the achievable data rate due to the multiplexing possibility in optics. In order to keep compatibility with electronic devices, optical components and interconnects should be built in silicon. However, this material is not suitable for some optical function, such as laser sources. Thus, there is a need to integrate alternative materials to compensate for silicon weaknesses. My PhD work focuses on integration of carbon nanotube on silicon for photonics applications. In this work, potential use of carbon nanotube for light emission function is investigated. First, I will propose clue to understand the appearance of optical gain in semiconducting carbon nanotube. Such investigation is done by mean of pump-probe experiments, where the excitons lifetimes are measured. Those lifetimes slightly increase while centrifugation time and speed is increased, during the extraction process. A possible explanation is that defect-free carbon nanotubes are selected by the centrifugation process. In parallel, I worked on designing an efficient method to couple nanotubes photoluminescence with silicon waveguides. This method appears to be quite robust, and allows to observe coupling between the nanotube photoluminescence and the optical mode of the waveguide. In order to obtain a more intense interaction between the optical mode and carbon nanotubes, I investigated the coupling between carbon nanotubes and several photonic cavities, including microdisks, Fabry-Pérot cavities and ring resonators. Specifically, ring resonators allow to measure the photoluminescence of carbon nanotube structured by the resonant modes. Several configurations are studied to understand more in-depth the coupling mechanisms: micro-photoluminescence, guided photoluminescence and integrated photoluminescence.

Depuis près d'un demi-siècle, l'industrie de la microélectronique a prospéré grâce à la miniaturisation des transistors Si CMOS. Cependant, la course à la miniaturisation se heurtera dans les prochaines années à des barrières physiques incontournables. Ainsi, de nombreux travaux technologiques sont en cours de réalisation sur les technologies émergentes et avancées. Ces technologies, notamment le graphène et la CMOS FD-SOI, représentent de grandes opportunités dans le domaine de la microélectronique, et notamment pour la conception de circuits radiofréquences et millimétriques. En outre, avec l'évolution croissante des objets et services connectés, les chercheurs travaillent intensivement sur les systèmes sans fil de cinquième génération (5G). La demande de débit de donnés et le besoin de spectre ont motivé l'utilisation de fréquences millimétriques. Par conséquent, la recherche 5G est confrontée par un ensemble de défis. L'un des défis majeurs de la 5G est la réduction de la consommation d'énergie. En fait, l'efficacité énergétique est directement liée à la fiabilité et au coût des systèmes de communication. L'amplificateur de puissance est l’élément le plus consommateur d'énergie, et l'un des blocs les plus critiques des émetteurs-récepteurs radio. Ainsi, la recherche dans ce domaine est cruciale pour les systèmes de communication de la prochaine génération. Par conséquent, l'objectif de cette thèse est d'étudier et de concevoir des amplificateurs de puissance sur les technologies émergentes et avancées pour les applications 5G. / For nearly half a century, the microelectronics industry has flourished based on the scaling of the silicon CMOS transistor technology. However, the race to transistor miniaturization encounters inevitable physical barriers. Thus, many technological works are under way for the realization of future transistors on emerging and advanced technologies. These technologies, notably the graphene and the CMOS FD-SOI, represent great opportunities for research in the fields of microelectronics, and especially for the design of radiofrequency and millimeter circuits. Besides, with the rising evolution of wireless devices and services, researchers are intensively working on the fifth generation (5G) wireless systems. The demand for high speed data and the need for more spectrum, have motivated the use of millimeter wave carrier frequencies. Therefore, the 5G research is faced with an evolving set of challenges. One of the major challenges of the next generation communication technology is reducing energy consumption. In fact, the power efficiency is directly related to the reliability and cost of the communication systems. It is widely known that the radiofrequency power amplifier is the most power consuming component in the radio transceivers, and is also one of the most critical building blocks in radio front-end. Therefore, research in this area is crucial for next generation communication systems. Consequently, the objective of this thesis is to study and design power amplifiers on emerging and advanced technologies for 5G applications.