4D Imaging Radar is increasingly becoming a critical component in various industries due to beamforming technology and hardware advancements. However, it does not replace visual data in the form of 2D images captured by an RGB camera. Instead, 4D radar point clouds are a complementary data source that captures spatial information and velocity in a Doppler dimension that cannot be easily captured by a camera's view alone. Some discriminative features of the scene captured by the two sensors are hypothesized to have a shared representation. Therefore, a more interpretable visualization of the radar output can be obtained by learning a mapping from the empirical distribution of the radar to the distribution of images captured by the camera. To this end, the application of deep generative models to generate images conditioned on 4D radar data is explored. Two approaches that have become state-of-the-art in recent years are tested, generative adversarial networks and diffusion models. They are compared qualitatively through visual inspection and by two quantitative metrics: mean squared error and object detection count. It is found that it is easier to control the generative adversarial network's generative process through conditioning than in a diffusion process. In contrast, the diffusion model produces samples of higher quality and is more stable to train. Furthermore, their combination results in a hybrid sampling method, achieving the best results while simultaneously speeding up the diffusion process. / 4D bildradar får en alltmer betydande roll i olika industrier tack vare utveckling inom strålformningsteknik och hårdvara. Det ersätter dock inte visuell data i form av 2D-bilder som fångats av en RGB-kamera. Istället utgör 4D radar-punktmoln en kompletterande datakälla som representerar spatial information och hastighet i form av en Doppler-dimension. Det antas att vissa beskrivande egenskaper i den observerade miljön har en abstrakt representation som de två sensorerna delar. Därmed kan radar-datan visualiseras mer intuitivt genom att lära en transformation från fördelningen över radar-datan till fördelningen över bilderna. I detta syfte utforskas tillämpningen av djupa generativa modeller för bilder som är betingade av 4D radar-data. Två metoder som har blivit state-of-the-art de senaste åren testas: generativa antagonistiska nätverk och diffusionsmodeller. De jämförs kvalitativt genom visuell inspektion och med kvantitativa metriker: medelkvadratfelet och antalet korrekt detekterade objekt i den genererade bilden. Det konstateras att det är lättare att styra den generativa processen i generativa antagonistiska nätverk genom betingning än i en diffusionsprocess. Å andra sidan är diffusionsmodellen stabil att träna och producerar generellt bilder av högre kvalité. De bästa resultaten erhålls genom en hybrid: båda metoderna kombineras för att dra nytta av deras respektive styrkor. de identifierade begränsningarna i de enskilda modellerna och kurera datan för att jämföra hur dessa modeller skalar med större datamängder och mer variation.

This master’s thesis investigates generative AI-art through the lens of actor network theory. By focusing on the role of images in datasets as a material that effects both AI-models and artworks, the decisively non-human agencies generative AI-models can be said to possess, and the traces and associations that generative AI-models imbue artworks with, this thesis aims to investigate art that has been created with GAN-models as well as contemporary text-to-image diffusion-models, by way of similar premises. Forgoing common discussions and questions regarding the status of AI-art as art that inundate many a reasoning regarding this topic, this thesis instead investigates the use of generative AI to make images and art with an understanding of it as a multifaceted practice that can be observed and experienced in a variety of ways.  General topics such as the way images are used to train AI-models, the blurry connections between trained images and generated images, the way AI-models can be used and interacted with by using prompts as well as different kinds of interfaces and AI-Image-generators, are investigated, followed by the analysis of a number of artworks for which generative AI has been used. Throughout this study generative AI-art emerges as a both novel and oftentimes contested artform that is defined by direct and indirect connection to other media, a varied understanding of what it is that the artificial intelligence appears to do, and a use of the AI-artwork as a means to comment the mediums emerging characteristics.

朱熹所建構的朱子學於後代之所以興盛的原因多門，官學、科舉的推動，雖將朱學普及化於民間士子，但亦僵化了朱學的發展，因而真正能將朱學的精髓發揚光大者，則非朱門弟子莫屬。若溯其源，則南宋朱門弟子對於朱學的傳衍，更是影響後代朱學發展的關鍵，無論從「道統」、「字義」等來看，或是元、明以降的《四書》學發展，黃榦和陳淳在其間皆扮演著關鍵性的角色，於朱學史中佔有不可或缺的一頁。基於此，本論文以朱門第一代弟子黃榦、陳淳為研究對象，首先從二人的為學歷程裡，鉤勒出一條繼承面向的脈絡。其次，透過二人的為學思想、體用關係、道統思維等方面，觀察二人在經典的詮釋與建構裡，如何接受、轉化及傳衍朱學。整體來說，本論文從原典文獻的角度出發，一方面客觀地釐清朱門後學的發展樣態，另一方面回應當前學術史的建構，重新看待在過去被忽略的歷史現場，補強朱門後學的研究成果。

Les matériaux semiconducteurs III N (AlN, GaN, InN) présentent des propriétés intéressantes pour la micro et l'opto-électronique. Ils peuvent être soumis à différents types d'irradiation dans une large gamme d'énergie de projectile. Dans l'AlN, initialement considéré insensible aux excitations électroniques (Se), nous avons mis en évidence une synergie inédite entre Se et les chocs nucléaires (Sn) pour la création de défauts absorbants à 4.7 eV. Par ailleurs, un autre effet du Se est mis en évidence dans l'AlN : les dislocations vis subissent, sous l'effet du Se, une montée aux fortes fluences d'irradiation. Dans le GaN, deux mécanismes de création peuvent être à l'origine des défauts absorbants à 2.8 eV: une synergie entre Se et Sn, ou une création uniquement due à Sn mais avec un fort effet de la taille des cascades de déplacement. L'étude, par MET, des effets de Se dans les trois matériaux, montre un comportement très différent d'un matériau à l'autre bien qu'ils appartiennent à la même famille des nitrures avec la même structure atomique. Sous irradiation aux ions monoatomiques (vitesse entre 0.4 et 5 MeV/u), tandis que l'on observe des traces discontinues dans le GaN et l'InN, aucune trace n'est observée dans l'AlN avec le plus fort pouvoir d'arrêt électronique (33 keV/nm). Il faut des fullerènes pour observer des traces dans l'AlN. Le modèle de la pointe thermique inélastique a permis de calculer les énergies nécessaires pour produire des traces dans l'AlN, le GaN et l'InN, elles sont respectivement de 4.2 eV/atome, 1.5 eV/atome et 0.8 eV/atome. Cette différence de sensibilité aux effets de Se, se retrouve également aux fortes fluences d'irradiation.

Face aux enjeux énergétiques d'aujourd'hui et de demain, le développement des énergies renouvelables semble inéluctable. Cependant, la production électrique de sources renouvelables prometteuses comme le photovoltaïque ou l'éolien est intermittente et difficilement prévisible du fait de la dépendance de ces sources aux conditions météorologiques. Afin de s'affranchir du caractère discontinu de la production d'électricité et de l'inadéquation de la production avec la consommation, un moyen de stockage de l'énergie électrique est nécessaire. Dans ce contexte, la batterie hydrogène est une des solutions envisagées. Lors de périodes de surproduction d'énergie renouvelable, un électrolyseur produit de l'hydrogène par électrolyse de l'eau. Lorsque cela est nécessaire, une pile à combustible fournit de l'électricité à partir du gaz stocké. Couplé avec des sources d'énergie renouvelable, la batterie produit de l'énergie électrique non carbonée, c'est-à-dire non émettrice de gaz à effet de serre. L'intérêt majeur de cette technologie est le découplage entre l'énergie et la puissance du système. Tant que la pile est alimentée en gaz, elle fournit de l'électricité, l'énergie dépend des réservoirs de gaz. La puissance quant à elle, dépend des caractéristiques des composants électrochimiques et du dimensionnement des chaînes de conversions de puissance. Les chaînes de conversions de puissance relient les composants électrochimiques au réseau électrique. Dans le cas de la chaîne de conversion sans transformateur qui est envisagée ici, la présence d'un convertisseur DC-DC à haut rendement est rendue nécessaire de par la caractéristique basse tension fort courant des composants électrochimiques. Avec pour but principal l'optimisation du rendement, deux axes de recherches sont développés. Le premier axe de recherche développe un convertisseur multicellulaire innovant à haut rendement à fort ratio de conversion. Les résultats expérimentaux du convertisseur appelé 'miroir' obtenu dans deux expérimentations ont démontré la supériorité de cette topologie en terme d'efficacité énergétique par rapport aux convertisseurs conventionnels. Le deuxième axe de recherche porte sur de nouveaux composants de puissance au nitrure de gallium (GaN) annoncés comme une rupture technologique. Un convertisseur buck multi-phases illustre les défis technologique et scientifique de cette technologie et montre le fort potentiel de ces composants.

The possibility of using methylamines instead of ammonia as a nitrogen precursor for the CVD of nitrides is studied using quantum chemical computations of reaction energies: reaction electronic energy (Δ𝑟𝐸𝑒𝑙𝑒𝑐) reaction enthalpy (Δ𝑟𝐻) and reaction free energy (Δ𝑟𝐺). The reaction energies were calculated for three types of reactions: Uni- and bimolecular decomposition to more reactive nitrogen species, adduct forming with trimethylgallium (TMG) and trimethylaluminum (TMA) followed by a release of methane or ethane and surface adsorption to gallium nitride for both the unreacted ammonia or methylamines or the decomposition products. The calculations for the reaction entropy and free energy were made at both STP and CVD conditions (300°C-1300°C and 50 mbar). The ab inito Gaussian 4 (G4) theory were used for the calculations of the decomposition and adduct reactions while the surface adsorptions were calculated using the Density Functional Theory method B3LYP. From the reactions energies it can be concluded that the decomposition was facilitated by the increasing number of methyl groups on the nitrogen. The adducts with mono- and dimethylamine were more favorable than ammonia and trimethylamine. 𝑁𝐻2 was found to be most readily to adsorb to 𝐺𝑎𝑁 while the undecomposed ammonia and methylamines was not willingly to adsorb.

[pt] Este trabalho descreve o desenvolvimento completo de um Amplificador de Potência de RF para Transceptores Multibanda. Em sua etapa inicial mostra um apanhado geral da teoria de todos os parâmetros relevantes para a medida de desempenho desses dispositivos, como potência, ganho e parâmetros de não linearidades. Em seguida são expostas as teorias básicas para o entendimento dos mecanismos para extração da máxima potência de um transistor, focando nos transistores de efeito de campo FET, incluindo a caracterização para regimes de alta potência. São apresentados os modos de operação de um amplificador de potência, focando nos chamados modos clássicos, dado que esses modos são convenientes para operação em banda larga. Para a correta operação de qualquer dispositivo que apresente ganho, a análise de estabilidade é apresentada com o procedimento de estabilização de transistores. A partir de todo o apanhado teórico, é desenvolvida uma metodologia de projeto de amplificadores de potência utilizando a ferramenta de simulação computacional Advanced Design System. Então, após toda a modelagem do amplificador, a construção e medidas são realizadas e boa concordância com a simulação foi obtida. / [en] This work describes the full development of a RF Power Amplifier for Multiband Transceivers. In its initial stage shows an overview of the theory of all relevant parameters to measure the performance of these devices, like power, gain and nonlinearity parameters. Then it exposes the basic theories for the understanding of the mechanisms for extracting the maximum power of a transistor, focusing on field effect transistors FET, including characterization for regimes of high power. It presents the modes of operation of a power amplifier, focusing on so-called classical modes, since these modes are suitable for broadband operation. For proper operation of any device that presents gain, the stability analysis is presented with the stabilization procedure of transistors. From all theoretical basis, is developed a design methodology of power amplifiers using the computational simulation tool Advanced Design System. So after all the amp modeling, construction and measurements are performed and good agreement was obtained with the simulation.

Tang, Li. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references (leaves 130-137). / Abstracts in English and Chinese. / Chapter 1 --- Introduction --- p.1 / Chapter 2 --- Literature Review --- p.9 / Chapter 2.1 --- Subaltern Public Sphere --- p.9 / Chapter 2.1.1 --- Public Sphere: Liberal Model --- p.9 / Chapter 2.1.2 --- Criticism on Unitary Public Sphere --- p.11 / Chapter 2.1.3 --- Subaltern Public Sphere --- p.12 / Chapter 2.1.4 --- Criteria for Subaltern Public Sphere --- p.14 / Chapter 2.1.5 --- External Parties --- p.16 / Chapter 2.1.6 --- Public Sphere in the Cyberspace --- p.17 / Chapter 2.2 --- Public Sphere in Contemporary China --- p.19 / Chapter 2.2.1 --- Application of the Concept of Public Sphere in China --- p.19 / Chapter 2.2.2 --- Dominant Public Sphere in China --- p.21 / Chapter 2.2.3 --- Subaltern Groups in China --- p.23 / Chapter 2.2.4 --- Subaltern Public Spheres in Chinese Cyberspace --- p.25 / Chapter 2.2.5 --- HBV Carriers Group and the Forum --- p.28 / Chapter 3 --- Research Design --- p.32 / Chapter 3.1 --- Overall Conceptual Framework --- p.32 / Chapter 3.2 --- Research Questions --- p.33 / Chapter 3.3 --- Research Methods --- p.36 / Chapter 3.3.1 --- Textual Analysis --- p.36 / Chapter 3.3.2 --- Interviews --- p.39 / Chapter 4 --- Brief Overview of the Forum --- p.43 / Chapter 4.1 --- Overall Development --- p.43 / Chapter 4.2 --- Structure --- p.46 / Chapter 4.3 --- Users --- p.50 / Chapter 5 --- Empowerment on the Discursive Level --- p.53 / Chapter 5.1 --- Characteristics of the Forum --- p.53 / Chapter 5.1.1 --- Alternative Topic --- p.53 / Chapter 5.1.2 --- Alternative Information of HBV --- p.54 / Chapter 5.1.3 --- Discourse of Self-Narrative --- p.59 / Chapter 5.1.4 --- Forum Accessibility --- p.61 / Chapter 5.1.5 --- Relative Equality --- p.62 / Chapter 5.2 --- Rhetoric of Innocence --- p.64 / Chapter 5.2.1 --- Attribution of the Spread of HBV --- p.65 / Chapter 5.2.2 --- Attribution of Discrimination --- p.68 / Chapter 5.3 --- Summary --- p.70 / Chapter 6 --- Empowerment and Collective Action --- p.73 / Chapter 6.1 --- The State --- p.73 / Chapter 6.1.1 --- State's Impact on HBV Carriers --- p.75 / Chapter 6.1.2 --- Resistance Enabled by the Internet --- p.76 / Chapter 6.1.3 --- Challenges from the State --- p.84 / Chapter 6.1.4 --- Compromise with the State --- p.86 / Chapter 6.2 --- The Market --- p.88 / Chapter 6.2.1 --- Market Domination --- p.89 / Chapter 6.2.2 --- Resistance against the Market --- p.91 / Chapter 6.2.3 --- Challenges from the market --- p.99 / Chapter 6.3 --- The Mass Media --- p.101 / Chapter 6.3.1 --- Mass Media's Domination --- p.102 / Chapter 6.3.2 --- Forum's Efforts to Get Favourably Represented --- p.106 / Chapter 6.3.3 --- Mass Media's Influence over the Forum --- p.111 / Chapter 6.4 --- Summary --- p.113 / Chapter 7 --- Conclusion and Discussion --- p.116 / Chapter 7.1 --- Assessing Empowerment Capacity --- p.116 / Chapter 7.1.1 --- Formation of a Subaltern Public Sphere --- p.116 / Chapter 7.1.2 --- Discursive Empowerment --- p.117 / Chapter 7.1.3 --- Transformed Relationships with External Parties --- p.118 / Chapter 7.2 --- Internet and Empowerment --- p.123 / Chapter 7.3 --- Limitations of the study --- p.127 / Bibliography --- p.130

Accurate transistor models are important in wireless and microwave circuit design. Large-signal field-effect transistor (FET) models are generally extracted from current-voltage (IV) characteristics, small-signal S-parameters, and large-signal measurements. This dissertation describes improved characterization and measurement validation techniques for FET models that correctly account for thermal and trapping effects. Demonstration of a customized pulsed-bias, pulsed-RF S-parameter system constructed by the author using a traditional vector network analyzer is presented, along with the design of special bias tees to allow pulsing of the bias voltages. Pulsed IV and pulsed-bias S-parameter measurements can provide results that are electrodynamically accurate; that is, thermal and trapping effects in the measurements are similar to those of radio-frequency or microwave operation at a desired quiescent bias point. The custom pulsed S-parameter system is benchmarked using passive devices and advantages and tradeoffs of pulsed S-parameter measurements are explored. Pulsed- and continuous-bias measurement results for a high-power transistor are used to validate thermal S-parameter correction procedures. A new implementation of the steepest-ascent search algorithm for load-pull is presented. This algorithm provides for high-resolution determination of the maximum power and associated load impedance using a small number of measured or simulated reflection-coefficient states. To perform a more thorough nonlinear model validation, it is often desired to find the impedance providing maximum output power or efficiency over variations of a parameter such as drain voltage, input power, or process variation. The new algorithm enables this type of validation that is otherwise extremely tedious or impractical with traditional load-pull. A modified nonlinear FET model is presented in this work that allows characterization of both thermal and trapping effects. New parameters and equation terms providing a trapping-related quiescent-bias dependence have been added to a popular nonlinear ("Angelov") model. A systematic method for fitting the quiescent-dependence parameters, temperature coefficients, and thermal resistance is presented, using a GaN high electron-mobility transistor as an example. The thermal resistance providing a good fit in the modeling procedure is shown to correspond well with infrared measurement results.

La technique originale de spectroscopie par saturation d'absorption, dite holeburning spectral, est mise en oeuvre pour étudier l'élargissement homogène de transitions optiques à 1,55 μm dans deux types de nanostructures. Pour les boîtes quantiques GaN/AlN, notre expérience constitue la première mesure directe de la largeur homogène de la transition intrabande s − pz. Des études en puissance démontrent le rôle prédominant des processus Auger dans la relaxation de population des niveaux. Le profil spectral d'absorption homogène s'avère gaussien. La forte augmentation de la largeur homogène entre 5K et 30K suggère des mécanismes de décohérence autres que le couplage aux phonons acoustiques, comme la diffusion spectrale. Dans le cas des nanotubes de carbone, notre dispositif expérimental permet d'étudier finement l'évolution du spectre d'absorption homogène de la transition électronique fondamentale sur une large gamme de puissance et pour des températures allant de 5K à 300 K. Les études en puissance mettent en évidence quantitativement la contribution prédominante de l'élargissement collisionnel et la contribution marginale de la réduction de force d'oscillateur au signal nonlinéaire. Deux processus d'interaction à deux excitons sont analysés : l'annihilation exciton-exciton (EEA) et la diffusion exciton-exciton (EES), et nous révélons la nature hybride Wannier-Frenkel particulière des excitons dans les nanotubes de carbone. Finalement, nous étudions le déphasage assisté par phonons et nous mettons en évidence les caractéristiques du couplage exciton-phonon, liées au caractère unidimensionnel.