This thesis deals with the characterization and implementation of transparent electron transport materials (ETM) in vacuum deposited p-i-n type organic solar cells (OSC) for substituting the parasitically absorbing standard ETM composed of n-doped C60. In addition to transparency in the visible range of the sun spectrum, the desired material properties include high electron mobility and conductivity, thermal and morphological stability, as well as good energy level alignment relative to the adjacent acceptor layer which is commonly composed of intrinsic C60. In this work, representatives of three different material classes are evaluated with regard to the above mentioned criteria. HATCN (hexaazatriphenylene hexacarbonitrile) is a small discoid molecule with six electron withdrawing nitrile groups at its periphery. It forms smooth thin films with an optical energy gap of 3.3eV, thus being transparent in the visible range of the sun spectrum. Doping with either 5wt% of the cationic n-dopant AOB or 7wt% of the proprietary material NDN1 effectively increases the conductivity to 7.6*10^-6 S/cm or 2.2*10^-4 S/cm, respectively. However, the fabrication of efficient OSC is impeded by the exceptionally high electron affinity (EA ) of approximately 4.8eV that causes the formation of an electron injection barrier between n-HATCN and intrinsic C60 (EA=4.0eV). This work presents a strategy to remove the barrier by introducing doped and undoped C60 intermediate layers, thus demonstrating the importance of energy level matching in a multi-layer structure and the advantages of Fermi level control by doping. Next, a series of six Bis-Fl-NTCDI (N,N-bis(fluorene-2-yl)-naphthalenetetracarboxylic diimide) compounds, which only differ by the length of the alkyl chains attached to the C9 positions of the fluorene side groups, is examined. When increasing the chain length from 0 to 6 carbon atoms, the energy levels remain nearly unchanged: We find EA=3.5eV as estimated from cyclic voltammetry, an ionization potential (IP ) in the range between 6.45eV and 6.63eV, and Eg,opt=3.1eV which means that all compounds form transparent thin films. Concerning thin film morphology, the addition of side chains results in the formation of amorphous layers with a surface roughness <1nm on room temperature glass substrates, and (1.5+/-0.5)nm for deposition onto glass substrates heated to 100°C. In contrast, films composed of the side chain free compound Bis-HFl-NTCDI exhibit a larger surface roughness of (2.5+/-0.5)nm and 9nm, respectively, and are nanocrystalline already at room temperature. Moreover, the conductivity achievable by n-doping is very sensitive to the side chain length: Whereas doping of Bis-HFl-NTCDI with 7wt% NDN1 results in a conductivity in the range of 10^-4 S/cm, the attachment of alkyl chains causes a conductivity which is more than three orders of magnitude smaller despite equal or slightly higher doping concentrations. The insufficient transport properties of the alkylated derivatives lead to the formation of pronounced s-kinks in the jV -characteristics of p-i-n type OSC while the use of n-Bis-HFl-NTCDI results in well performing devices. The last material, HATNA-Cl6 (2,3,8,9,14,15- hexachloro-5,6,11,12,17,18-hexaazatrinaphthylene), exhibits Eg,opt=2.7eV and is therefore not completely transparent in the visible range of the sun spectrum. However, its energy level positions of EA=4.1eV and IP=7.3eV are well suited for the application as ETM in combination with i-C60 as acceptor. The compound is dopable with all available n-dopants, resulting in maximum conductivities of sigma=1.6*10^-6, 3.5*10^-3, and 7.5*10^-3 S/cm at 7.5wt% AOB, Cr2(hpp)4, and NDN1, respectively. Applying n-HATNA-Cl6 instead of the reference ETM n-C60 results in a comparable or improved photocurrent density at an ETM thickness d(ETM)=40nm or 120nm, respectively. At d(ETM)=120nm, the efficiency eta is more than doubled as it increases from eta(n-C60)=0.4% to eta(n-HATNA-Cl6)=0.9% . Optical simulations show that the replacement of n-C60 by n-Bis-HFl-NTCDI, n-HATNA-Cl6, or the previously studied n-NTCDA (naphthalenetretracarboxylic dianhydride) in p-i-n or n-i-p type device architectures is expected to result in an increased photocurrent due to reduced parasitic absorption. For quantifying the gain, the performance of p-i-n type OSC with varying ETM type and thickness is evaluated. Special care has to be taken when analyzing devices comprising the reference ETM n-C60 as its conductivity is sufficiently large to extend the area of the aluminum cathode and thus the effective device area which may lead to distorted results. Overall, the experiment is able to confirm the trends predicted by the optical simulation. At large ETM thickness in the range between 60 and 120nm, the window layer effect of the ETM is most pronounced. For instance, at d(ETM)=120nm, eta(C60) is more than doubled using n-HATNA-Cl6 and even more than tripled using n-Bis-HFl-NTCDI or n-NTCDA. At optimized device geometry the photocurrent gain is slightly less than expected but nonetheless, the efficiency is improved from eta(max)=2.1% for n-C60 and n-HATNA-Cl6 solar cells to eta(max)=2.3, and 2.4% for n-Bis-HFl-NTCDI and n-NTCDA devices, respectively. This development is supported by generally higher Voc and FF in solar cells with transparent ETM. Finally, p-i-n type solar cells with varying ETM are aged at a temperature of 50°C and an illumination intensity of approximately 2 suns. Having extrapolated lifetimes t(80) of 36, 500, and 14000h and nearly unchanged jV-characteristics after 2000h, n-C60 and n-Bis-HFl-NTCDI devices exhibit the best stability. In contrast, n-NTCDA devices suffer from a constant decrease in Isc while n-HATNA-Cl6 solar cells show a rapid dscegradation of both Isc and FF associated with a decomposition of the material or a complete de-doping of the ETM. Here, lifetimes of only 4500h and 445hare achieved.

We demonstrate a new approach for fabricating alternating current driven organic electroluminescent devices using the concept of doping in organic semiconductors. Doped charge transport layers are used for generation of charge carriers within the device, hence eliminating the need for injecting charge carriers from external electrodes. The device is an organic-inorganic hybrid: We exploit the mechanical strength and chemical stability of inorganic semiconductors and combine it with better optical properties of organic materials whose emission color can be chemically tuned so that it covers the entire visible spectrum. The device consists of an organic electroluminescence (EL) layer composed of unipolar/ambipolar charge transport materials doped with organic dyes (10 wt% ) as well as molecularly doped charge generation layers enclosed between a pair of transparent insulating metal oxide layers. A transparent indium doped tin oxide (ITO) layer acts as bottom electrode for light outcoupling and Aluminium (Al) as top reflective electrode. The electrodes are for applying field across the device and to charge the device, instead of injection of charge carriers in case of direct current (DC) devices. Bright luminance of up to 5000 cd m-2 is observed when the device is driven with an alternating current (AC) bias. The luminance observed is attributed to charge carrier generation and recombination, leading to formation of excitons within the device, without injection of charge carriers through external electrodes.

<p>This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si_1-xGe_x) films for high-speed bipolar transistors.<i>In situ</i>doping of polycrystalline silicon (poly-Si)using phosphine (PH₃) and disilane (Si₂H₆) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. The growthkinetics and P incorporation was studied for amorphous Si filmgrowth. Hydrogen (H) incorporated in the as-deposited films wasrelated to growth kinetics and the energy for H₂desorption was extracted. Film properties such asresistivity, mobility, carrier concentration and grain growthwere studied after crystallization using either furnaceannealing or rapid thermal annealing (RTA). In order tointegrate an epitaxial base, non-selective epitaxial growth(NSEG) of Si and SiGe in a lamp-heated single-waferreduced-pressure CVD reactor was examined. The growth kineticsfor Si epitaxy and poly-Si deposition showed a differentdependence on the deposition conditions i.e. temperature andpressure. The growth rate difference was mainly due to growthkinetics rather than wafer surface emissivity effects. However,it was observed that the growth rate for Si epitaxy and poly-Sideposition was varying during growth and the time-dependencewas attributed to wafer surface emissivity variations. A modelto describe the emissivity effects was established, taking intoconsideration kinetics and the reactor heating mechanisms suchas heat absorption, emission andconduction. Growth ratevariations in opening of different sizes (local loading) andfor different oxide surface coverage (global loading) wereinvestigated. No local loading effects were observed, whileglobal loading effects were attributed to chemical as well astemperature effects. Finally, misfit dislocations formed in theSiGe epitaxy during NSEG were found to originate from theinterface between the epitaxial and polycrystalline regions.The dislocations tended to propagate across the activearea.</p><p><b>Keywords:</b>chemical vapor deposition (CVD), bipolarjunction transistor (BJT), heterojunction bipolar transistor(HBT), silicon-germanium (SiGe), epitaxy, poly-Si emitter,<i>in situ</i>doping, non-selective epitaxy (NSEG), loadingeffect, emissivity effect</p>

Hydrogen is an efficient, carbon-free and safe energy carrier. However, its compact and weight-efficient storage is an ongoing subject for research and development. Among the intensively investigated hydrogen storage materials, lithium aluminum hydride (LiAlH4) is an attractive candidate because of its high theoretical hydrogen density (volumetric: 96.7g H2/l material; gravimetric: 10.6 wt.%-H2) in combination with rather low decomposition temperatures (onset temperature <100°C after doping). Although the reversible dehydrogenation of LiAlH4 must be carried out with the help of organic solvent, LiAlH4 can serve as single-use hydrogen storage material for various special applications, for example, hydrogen fuel cell systems. This thesis deals with transition metal (TM)-doped LiAlH4 aiming at tailored dehydrogenation properties. The crystal structure and morphology of TM-doped LiAlH4 is characterized by XRD and SEM respectively. The positive effects of four dopants (NiCl2, TiCl3, ZrCl4 and TiCl4) on promoting the dehydrogenation kinetics of LiAlH4 are systematically studied by thermal analysis. Based on the state of each TM chloride (solid or liquid), three low-energy-input doping methods (1. ball-milling at low rotation speed; 2. manual grinding or magnetic stirring; 3. magnetic stirring in ethyl ether) are compared in order to prepare LiAlH4 with the maximum amount of hydrogen release in combination with fast dehydrogenation kinetics. The dehydrogenation properties of the TM-doped LiAlH4 powders are measured under isothermal conditions at 80°C at a H2 pressure of 1 bar, which is within the operating temperature range of proton exchange membrane (PEM) fuel cells, aiming at applications where the exhaust heat of the fuel cell is used to trigger the dehydrogenation of the hydrogen storage material. Furthermore, the mid-term dehydrogenation behavior of TM-doped LiAlH4 was monitored up to a few months in order to test its mid-term storability. In addition, the pelletization of TM-doped LiAlH4 is investigated aiming at a higher volumetric hydrogen storage capacity. The effects of compaction pressure, temperature and the H2 back-pressure on the dehydrogenation properties of TM-doped LiAlH4 pellets are systematically studied. Moreover, the volume change through dehydrogenation and the short-term storage of the TM-doped LiAlH4 pellets are discussed in view of practical applications for PEM fuel cell systems. / Wasserstoff ist ein effizienter, kohlenstofffreier und sicherer Energieträger. Jedoch die kompakte und gewichtseffiziente Speicherung ist ein permanentes Forschungs- und Entwicklungsthema. Unter den intensiv untersuchten Materialien für die Wasserstoffspeicherung ist aufgrund der hohen theoretischen Speicherdichte (volumetrisch: 96,7 g H2/L, gravimetrisch: 10.6 Gew.%-H2) in Kombination mit sehr niedrigen Zersetzungstemperaturen (Anfangstemperatur < 100°C nach Dotierung) Lithium Aluminiumhydrid (LiAlH4) ein vielversprechender Kandidat. Obwohl die reversible Dehydrierung von LiAlH4 mit Hilfe von organischen Lösungsmitteln durchgeführt werden muss, kann LiAlH4-Pulver als Einweg-Speichermaterial für verschiedene Anwendungen dienen, beispielsweise für Wasserstoff/Brennstoffzellensysteme. Diese Doktorarbeit beschäftigt sich mit LiAlH4 dotiert mit Übergangsmetall, mit dem Ziel maßgeschneiderte Dehydrierungseigenschaften zu erreichen. Die Kristallstruktur und die Morphologie der mit Übergangsmetallen dotierten LiAlH4-Pulver wurden mit Röntgenbeugung (XRD) und Rasterelektronenmikroskopie (REM) charakterisiert. Weiterhin wurde der positive Effekt der Dotanden auf die reaktionsfördernde Dehydrierung von LiAlH4 systematisch mit Hilfe thermoanalytischer Methoden untersucht. Für jedes Übergangsmetall, welches in Form von Übergangsmetallchloriden vorlag, wurden drei Dotierungsmethoden mit niedrigem Energieeintrag (Kugelmahlen mit geringer Rotations-geschwindigkeit, manuelles Schleifen/Magnetrühren, Magnetrühren mit Ethylether) verglichen, um LiAlH4-Pulver mit einer maximalen Wasserstofffreisetzungsmenge in Kombination mit einer schnellen Dehydrierungskinetik zu erzielen. Die Dehydrierung des dotierten LiAlH4-Pulvers wurde unter isothermen Bedingungen bei 80°C und einem H2-Druck von 1 bar gemessen, was im Bereich der Betriebstemperatur von PEM-Brennstoffzellen (Proton Exchange Membran) liegt. Dadurch sollen Anwendungen anvisiert werden, bei denen die entstehende Abwärme der Brennstoffzelle genutzt wird, um die Dehydrierung des Wasserstoffspeichermaterials auszulösen. Zudem wurde das Dehydrierungsverhalten des dotierten LiAlH4 bis zu einigen Monaten kontrolliert, um die mittelfristige Haltbarkeit zu testen. Weiterhin wurde die Pelletierung des mit Übergangsmetallen dotierten LiAlH4 mit dem Ziel untersucht, eine hohe volumetrische Speicherkapazität zu erreichen. Der Einfluss des Pressdrucks, der Dehydrierungstemperatur und des H2-Gegendrucks auf die Dehydrierungseigenschaften der mit Übergangsmetallen dotierten LiAlH4-Presslinge wurde systematisch analysiert. Außerdem wird die Volumenveränderung durch die Dehydrierung und die Kurzzeitspeicherung der mit Übergangsmetallen dotierten LiAlH4-Presslinge im Hinblick auf praktische Anwendungen unter Nutzung der Brennstoffzelle diskutiert.

Als Graphen bezeichnet man eine einzelne freistehende Lage des Schichtkristalls Graphit. Im Gegensatz zur mechanischen Isolation von Graphit bietet die Züchtung auf Siliziumkarbid eine Methode zur großflächigen Herstellung von Graphen. Aufgrund der besonderen physikalischen Eigenschaften werden für Graphen viele verschieden Einsatzmöglichkeiten in diversen Bereichen prognostiziert. Mit seiner hohen Ladungsträgerbeweglichkeit ist Graphen besonders als Kanalmaterial für Feldeffekttransistoren (FET) interessant. Allerdings muss hierfür unter anderem ein geeignetes FET-Isolatormaterial gefunden werden. In dieser Arbeit wird eine detaillierte, theoretische Beschreibung der Graphen-FETs vorgestellt, die es erlaubt die steuerspannungsabhängige Hall-Konstante zu berechnen. Mit der dadurch möglichen Analyse können wichtige Kenngrößen, wie z. B. die Grenzflächenzustandsdichte des Materialsystems bestimmt werden. Außerdem wurden zwei Methoden zur Isolatorabscheidung auf Graphen untersucht. Siliziumnitrid, welches mittels plasmaangeregter Gasphasenabscheidung aufgetragen wurde, zeichnet sich durch seine n-dotierende Eigenschaft aus. Damit ist es vor allem für quasi-freistehendes Graphen auf Siliziumkarbid interessant. Bei der zweiten Methode handelt es sich um einen atomaren Schichtabscheidungsprozess, der ohne eine Saatschicht auskommt. An beiden Graphen- Isolator-Kombinationen wurde die neue Charakterisierung mittels der Hall-Datenanalyse angewandt.

This thesis focuses on the use of surface modifiers to tune the properties of both metals and metal oxides. Particular attention is given to examine the modification of transparent conducting oxides (TCOs) including indium tin oxide and zinc oxide both through the use of phosphonic acids as well as organic and metal-organic dopants. In this thesis a variety of known and new phosphonic acids are synthesized. A subset of these molecules are then used to probe the relationship between the ability of a phosphonic acid to tune the work function of ITO and how that interrelates with the coverage and molecular orientation of the modifier on the surface. Experimental techniques including XPS, UPS, and NEXAFS are coupled with theoretical DFT calculations in order to more closely examine this relationship. Literature surrounding the modification of zinc oxide with phosphonic acids is not as prevalent as that found for the modification of ITO. Thus, effort is placed on attempting to determine optimal modification conditions for phosphonic acids on zinc oxide. As zinc oxide is already a low work function metal oxide, modifiers were synthesized in an attempt to further decrease the work function of this substrate in an effort to minimize the barrier to carrier collection/injection. Etching of the substrate by phosphonic acids is also examined. In a related technique, n- and p-dopants are used to modify the surfaces of ITO, zinc oxide, and gold and it was found that the work function can be drastically altered, to approximately 3.3 – 3.6 eV for all three of the substrates examined. Surface reactions are straightforward to conduct typically taking only 60 s to achieve this change in work function.

Luminescence measurements have been applied to three different structures namely, sulphate, fluorides and YAG. In all cases the RE doping suppresses the intrinsic emission and results in intense luminescence characteristic of the RE dopant. Additionally, in double doped samples, or contaminated ones, the TL data show that each dopant defines a glow peak, which is displaced in temperature relative to the others. Examples of this were discussed for CaS04:Ce,Mn; YAG:Nd,Tb,Cr,Mn; BaF2:Ho,Ce and BaF2:Tm,Ce. The data are discussed in terms of an energy transfer model between different parts of extended defect complexes which encompass the RE ion and the lattice defects. Calcium sulphate doped with Dy define a TL peak near 200°C suitable for radiation measurements, but when co-doped with Ag the TL peak move to higher temperatures with minor effects on the peak sensitivity. In Ce,Mn double doped samples, the peak temperatures differ by -7°C between the Ce and Mn sites. The TL glow curves from alkaline earth fluorides are complex and contain several overlapping peaks. Curve fitting show that the peak maxima below room temperature are insensitive to the RE dopant. Additionally the host material has a modest effect on the peak positions. Above room temperature each dopant provides a TL curve specific to the added RE ion and do not show common peaks. Concentration has many effects on the resultant glow curve, and even at the lowest concentration used here (0.01%) there is evidence of cluster formation. Samples with high RE content show low values of the frequency factor consistent with the energy transfer model in that the emission from RE-RE cluster dominates over the emission from direct charge recombination within the defect complex. The effect of concentration and the TL mechanism operating below room temperature are also discussed. Luminescence signals from the near surface of YAG:Nd (via CL) were contrasted with those from the bulk material via RL. Results indicate that the outer few micron layers differ significantly in luminescence response from the bulk crystal. The differences were ascribed to result from solvents that enter the YAG lattice during the growth stage or subsequently from cleaning treatments via the dislocations caused by cutting and polishing. Additionally, the growth stage may include gases from the residual air in the growth furnace trapped into the YAG lattice. In each case there is a discontinuity in luminescence intensity and/or emission wavelengths at temperatures which mach the phase transitions of the contaminants. At the transition temperature there will be a sudden pressure change and this will induce surface expansion or bulk compression. The differences between the two cases were detected by the alternatives of CL and RL excitation, where the Nd or Er lines have moved in opposite directions. The detection of such low concentrations of solvents/trapped gases by luminescence is extremely difficult due to experimental limitations. Hence their role in luminescence generation is normally ignored.

Graphene, a two-dimensional counterpart of three-dimensional graphite, has attracted significant interest, due to its distinctive electrical and mechanical properties, for developing electronic, optoelectronic, and sensor technologies. In general, doping of graphene is important, as it gives rise to p-type and n-type materials, and it adjusts the work function of the graphene. This adjustment is necessary in order to control charge injection and collection in devices such as solar cells and light emitting devices. Current methods for graphene doping involve high temperature process or interactions with chemicals that are not stable. Moreover, the process of transferring graphene from its growth substrate and its exposure to the environment results in a host of chemical groups that can become attached to the film and alter its electronic properties by accepting or donating electrons/holes. Intentional and controllable doping of the graphene, however, requires a deeper understanding of the impact of these groups. The proposed research will attempt to clarify the unintentional doping mechanism in graphene through adsorption or desorption of gas/vapor molecules found in standard environments. A low temperature, controllable and defect-free method for doping graphene layers will also be studied through modifying the interface of graphene and its support substrate with self-assembled monolayers (SAMs) which changes the work function and charge carriers in the graphene layer. Furthermore, current methods of chemical vapor deposition synthesis of graphene requires the film to be transferred onto a second substrate when the metal layer used for growth is not compatible with device fabrication or operation. To address this issue, the proposed work will investigate a new method for wafer scale, transfer-free synthesis of graphene on dielectric substrates using new carbon sources. This technique allows patterned synthesis on the target substrate and is compatible with standard device fabrication technologies; hence, it opens a new pathway for low cost, large area synthesis of graphene films.

A novel cyclopentadienylruthenium(II) thiolato Schiff base, [Ru(SC6H4NC(H)C6H4OCH2CH2SMe)(&eta / 5-C2H5]2 was synthesized and deposited as a selfassembled monolayer (SAM) on a gold electrode. Effective electronic communication between the Ru(II) centers and the gold electrode was established by electrostatically cycling the Shiff base-doped gold electrode in 0.1 M NaOH from -200 mV to +600 mV. The SAMmodified gold electrode (Au/SAM) exhibited quasi-reversible electrochemistry. The integrity of this electro-catalytic SAM, with respect to its ability to block and electro-catalyze certain Faradaic processes, was interrogated using Cyclic and Osteryoung Square Wave voltammetric experiments. The formal potential, E0', varied with pH to give a slope of about - 34 mV pH-1. The surface concentration, &Gamma / , of the ruthenium redox centers was found to be 1.591 x 10-11 mol cm-2. By electrostatically doping the Au/SAM/Horseradish peroxidase at an applied potential of +700 mV vs Ag/AgCl, a biosensor was produced for the amperometric analysis of hydrogen peroxide, cumene hydroperoxide and tert-butylhydroperoxide. The electrocatalytic-type biosensors displayed typical Michaelis-Menten kinetics with their limits of detection of 6.45 &mu / M, 6.92 &mu / M and 7.01 &mu / M for hydrogen peroxide, cumene hydroperoxide and tert-butylhydroperoxide respectively.

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