This work represents several years' research into the field of radiation hardening by design. The unique characteristics of a SiGe HBT, described in Chapter 1, make it ideally suitable for use in extreme environment applications. Chapter 2 describes the total ionizing dose effects experienced by a SiGe HBT, particularly those experienced on an Earth-orbital or lunar-surface mission. In addition, the effects of total dose are evaluated on passive devices. As opposed to the TID-hardness of SiGe transistors, a clear vulnerability to single-event effects does exist. This field is divided into three chapters. First, the very nature of single-event transients present in SiGe HBTs is explored in Chapter 3 using a heavy-ion microbeam with both bulk and SOI platforms [31]. Then, in Chapter 4, a new device-level SEU-hardening technique is presented along with circuit-design techniques necessarily for its implementation. In Chapter 5, the circuit-level radiation-hardening techniques necessarily to mitigate the effects shown in Chapter 3 are developed and tested [32]. Finally, in Chapter 6, the performance of the SiGe HBT in a cryogenic testing environment is characterized to understand how the widely-varying temperatures of outer space may affect device performance. Ultimately, the built-in performance, TID-tolerance, and now-developing SEU-hardness of the SiGe HBT make a compelling case for extreme environment electronics. The low-cost, high-yield, and maturity of Si manufacturing combine with modern bandgap engineering and modern CMOS to produce a high-quality, high-performance BiCMOS platform suitable for space-borne systems.

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<p>This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si_1-xGe_x) films for high-speed bipolar transistors.<i>In situ</i>doping of polycrystalline silicon (poly-Si)using phosphine (PH₃) and disilane (Si₂H₆) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. The growthkinetics and P incorporation was studied for amorphous Si filmgrowth. Hydrogen (H) incorporated in the as-deposited films wasrelated to growth kinetics and the energy for H₂desorption was extracted. Film properties such asresistivity, mobility, carrier concentration and grain growthwere studied after crystallization using either furnaceannealing or rapid thermal annealing (RTA). In order tointegrate an epitaxial base, non-selective epitaxial growth(NSEG) of Si and SiGe in a lamp-heated single-waferreduced-pressure CVD reactor was examined. The growth kineticsfor Si epitaxy and poly-Si deposition showed a differentdependence on the deposition conditions i.e. temperature andpressure. The growth rate difference was mainly due to growthkinetics rather than wafer surface emissivity effects. However,it was observed that the growth rate for Si epitaxy and poly-Sideposition was varying during growth and the time-dependencewas attributed to wafer surface emissivity variations. A modelto describe the emissivity effects was established, taking intoconsideration kinetics and the reactor heating mechanisms suchas heat absorption, emission andconduction. Growth ratevariations in opening of different sizes (local loading) andfor different oxide surface coverage (global loading) wereinvestigated. No local loading effects were observed, whileglobal loading effects were attributed to chemical as well astemperature effects. Finally, misfit dislocations formed in theSiGe epitaxy during NSEG were found to originate from theinterface between the epitaxial and polycrystalline regions.The dislocations tended to propagate across the activearea.</p><p><b>Keywords:</b>chemical vapor deposition (CVD), bipolarjunction transistor (BJT), heterojunction bipolar transistor(HBT), silicon-germanium (SiGe), epitaxy, poly-Si emitter,<i>in situ</i>doping, non-selective epitaxy (NSEG), loadingeffect, emissivity effect</p>

The research presented in this thesis leverages silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology to develop microwave front-end electronics for active phased-array antennas. The highly integrated electronics will reduce costs and improve the feasibility of snow measurements from airborne and space-borne platforms. Chapter 1 presents the motivation of this research, focusing on the technological needs of snow measurement missions. The fundamentals and benefits of SiGe HBTs and phased-array antennas for these missions are discussed as well. Chapter 2 discusses SiGe power amplifier design considerations for radar systems. Basic power amplifier design concepts, power limitations in SiGe HBTs, and techniques for increasing the output power of SiGe HBT PAs are reviewed. Chapter 3 presents the design and characterization of a robust medium power X-band SiGe power amplifier for integration into a SiGe transmit/receive module. The PA design process applies the concepts presented in Chapter 2. A detailed investigation into measurement-to-simulation discrepancies is outlined as well. Chapter 4 discusses the development and characterization of a single-chip X-band SiGe T/R module for integration into a very thin, lightweight active phased array antenna panel. The system-on-package antenna combines the high performance and integration potential of SiGe technologies with advanced substrates and packaging techniques to develop a high performance scalable antenna panel using relatively low-cost materials and silicon-based electronics. The antenna panel presented in this chapter will enable airborne SCLP measurements and advance the technology towards an eventual space-based SCLP measurement instrument that will satisfy a critical Earth science need. Finally, Chapter 5 provides concluding remarks and discusses future research directions.

Cette thèse présente le travail effectué sur la conception d'un synthétiseur de fréquence entièrement numérique appelé Synthétiseur Digital Direct (DDS), dans la gamme micro-ondes, et en technologie BiCMOS SiGe. Ce DDS a pour objectif de se substituer aux synthèses de fréquences indirectes notamment basées sur des boucles à verrouillage de phase (PLL). Jusqu'à présent, le coût, la consommation, la surface d'intégration et la gamme de fréquences synthétisables des DDS étaient des facteurs limitants pour les applications du domaine micro-onde. Nous présentons dans cette thèse des techniques de conception en numérique hyperfréquence (logique ECL multi-niveaux, convertisseur numérique/analogique non-linéaire, ...) qui nous ont permis de repousser les limites évoquées et de concevoir les blocs élémentaires ainsi que le DDS complet, intégrés dans une technologie faible coût silicium et fonctionnant à haute fréquence tout en ayant une consommation réduite. Ainsi, la fréquence de fonctionnement du système final est de 6 GHz, sa résolution interne de 9-bits et sa consommation de seulement 308 mW. Ce travail démontre ainsi la faisabilité de DDS fonctionnant dans la gamme micro-onde compatibles avec les applications multimédias et télécommunications sans fil récentes (faible coût, agilité en fréquence, faible consommation, versatilité, ...).

Recent advancements in silicon technology have paved the way for the development of integrated transceivers operating well inside the mm-wave frequency range (30 - 300 GHz). This band offers opportunities for new applications such as remote sensing, short range radar, active imaging and multi-Gb/s radios. This thesis presents new ideas at the circuit and system level for a variety of such applications, up to 145 GHz and in both state-of-the-art nanoscale CMOS and SiGe BiCMOS technologies. After reviewing the theory of operation behind linear and power amplifiers, a purely digital, scalable solution for power amplification that takes advantage of the significant ft/fmax improvement in pFETs as a result of strain engineering in nanoscale CMOS is presented. The proposed Class-D power amplifier, features a stacked, cascode CMOS inverter output stage, which facilitates high voltage operation while employing only thin-oxide devices in a 45 nm SOI CMOS process. Next, a single-chip, 70-80 GHz wireless transceiver for last-mile point-to-point links is described. The transceiver was fabricated in a 130 nm SiGe BiCMOS technology and can operate at data rates in excess of 18 Gbps. The high bitrate is accomplished by taking advantage of the ample bandwidth available at the W-band frequency range, as well as by employing a direct QPSK modulator, which eliminates the need for separate upconversion and power amplification. Lastly, the system and circuit level implementation of a mm-wave precision distance and velocity sensor at 122 and 145 GHz is presented. Both systems feature a heterodyne architecture to mitigate the receiver 1/f noise, as well as self-test and calibration capabilities along with simple packaging techniques to reduce the overall system cost.

Recent advancements in silicon technology have paved the way for the development of integrated transceivers operating well inside the mm-wave frequency range (30 - 300 GHz). This band offers opportunities for new applications such as remote sensing, short range radar, active imaging and multi-Gb/s radios. This thesis presents new ideas at the circuit and system level for a variety of such applications, up to 145 GHz and in both state-of-the-art nanoscale CMOS and SiGe BiCMOS technologies. After reviewing the theory of operation behind linear and power amplifiers, a purely digital, scalable solution for power amplification that takes advantage of the significant ft/fmax improvement in pFETs as a result of strain engineering in nanoscale CMOS is presented. The proposed Class-D power amplifier, features a stacked, cascode CMOS inverter output stage, which facilitates high voltage operation while employing only thin-oxide devices in a 45 nm SOI CMOS process. Next, a single-chip, 70-80 GHz wireless transceiver for last-mile point-to-point links is described. The transceiver was fabricated in a 130 nm SiGe BiCMOS technology and can operate at data rates in excess of 18 Gbps. The high bitrate is accomplished by taking advantage of the ample bandwidth available at the W-band frequency range, as well as by employing a direct QPSK modulator, which eliminates the need for separate upconversion and power amplification. Lastly, the system and circuit level implementation of a mm-wave precision distance and velocity sensor at 122 and 145 GHz is presented. Both systems feature a heterodyne architecture to mitigate the receiver 1/f noise, as well as self-test and calibration capabilities along with simple packaging techniques to reduce the overall system cost.

This thesis presents an efficient self-consistent Hybrid Spectral Ray Tracing (HSRT) technique for analysis and design of multi-scale sub-millimeter wave problems, where sub-wavelength features are modeled using rigorous methods, and complex structures with dimensions in the order of tens or even hundreds of wavelengths are modeled by asymptotic methods. Quasi-optical devices are used in imaging arrays for sub-millimeter and terahertz applications, THz time-domain spectroscopy (THz-TDS), high-speed wireless communications, and space applications to couple terahertz radiation from space to a hot electron bolometer. These devices and structures, as physically small they have become, are very large in terms of the wavelength of the driving quasi-optical sources and may have dimension in the tens or even hundreds of wavelengths. Simulation and design optimization of these devices and structures is an extremely challenging electromagnetic problem. The analysis of complex electrically large unbounded wave structures using rigorous methods such as method of moments (MoM), finite element method (FEM), and finite difference time domain (FDTD) method can become almost impossible due to the need for large computational resources. Asymptotic high-frequency techniques are used for analysis of electrically large quasi-optical systems and hybrid methods for solving multi-scale problems. Spectral Ray Tracing (SRT) has a number of unique advantages as a candidate for hybridization. The SRT method has the advantages of Spectral Theory of Diffraction (STD). STD can model reflection, refraction and diffraction of an arbitrary wave incident on the complex structure, which is not the case for diffraction theories such as Geometrical Theory of Diffraction (GTD), Uniform theory of Diffraction (UTD) and Uniform Asymptotic Theory (UAT). By including complex rays, SRT can effectively analyze both near-fields and far-fields accurately with minimal approximations. In this thesis, a novel matrix representation of SRT is presented that uses only one spectral integration per observation point and applied to modeling a hemispherical and hyper-hemispherical lens. The hybridization of SRT with commercially available FEM and MoM software is proposed in this work to solve the complexity of multi-scale analysis. This yields a computationally efficient self-consistent HSRT algorithm. Various arrangements of the Hybrid SRT method such as FEM-SRT, and MoM-SRT, are investigated and validated through comparison of radiation patterns with Ansoft HFSS for the FEM method, FEKO for MoM, Multi-level Fast Multipole Method (MLFMM) and physical optics. For that a bow-tie terahertz antenna backed by hyper-hemispherical silicon lens, an on-chip planar dipole fabricated in SiGe:C BiCMOS technology and attached to a hyper-hemispherical silicon lens and a double-slot antenna backed by silica lens will be used as sample structures to be analyzed using the HSRT. Computational performance (memory requirement, CPU/GPU time) of developed algorithm is compared to other methods in commercially available software. It is shown that the MoM-SRT, in its present implementation, is more accurate than MoM-PO but comparable in speed. However, as shown in this thesis, MoM-SRT can take advantage of parallel processing and GPU. The HSRT algorithm is applied to simulation of on-chip dipole antenna backed by Silicon lens and integrated with a 180-GHz VCO and radiation pattern compared with measurements. The radiation pattern is measured in a quasi-optical configuration using a power detector. In addition, it is shown that the matrix formulation of SRT and HSRT are promising approaches for solving complex electrically large problems with high accuracy. This thesis also expounds on new measurement setup specifically developed for measuring integrated antennas, radiation pattern and gain of the embedded on-chip antenna in the mmW/ terahertz range. In this method, the radiation pattern is first measured in a quasi-optical configuration using a power detector. Subsequently, the radiated power is estimated form the integration over the radiation pattern. Finally, the antenna gain is obtained from the measurement of a two-antenna system.

The objective of proposed research is to investigate the potential of strained silicon and silicon-germanium (SiGe) based devices for RF/mixed-signal applications. Different device topologies, namely strained buried channel modulation doped field effect transistor (MODFET) and silicon-on-insulator (SOI) based MOSFETs, are studied in this context. Our preliminary results on SiGe MODFETs indicate strong dependence of device performance on displacement damage, which is critical for extreme environment applications. This research will be an effort towards understanding the physics of these devices in extreme environment conditions.

With rapid advances in semiconductor technologies and packaging schemes, wireless products have become more versatile, portable, inexpensive, and user friendly over last few decades. However, the ever-growing demand of consumers to share information efficiently at higher speeds requires higher data rates, increased functionality, lower cost, and more reliability. The 60-GHz-frequency band, with 7 GHz license-free bandwidth addresses, such demands, and promises a low-cost multi-Gbps wireless transmission with a power budget in the order of 100 mW. This dissertation presents the systematic development of key building blocks and integrated 60-GHz-receiver solutions. Two different approaches are investigated and implemented in this dissertation: (1) low-cost SiGe-based direct-conversion low-power receiver front-end utilizing gain-boosting techniques in the front-end low-noise amplifier, and (2) CMOS-based heterodyne receiver front-end suitable for high-performance single-chip 60 GHz transceiver solution. The ASK receiver chip, implemented using 0.18 ?m SiGe, presents a complete antenna-to-baseband multi-gigabit 60 GHz solution with the lowest reported power budget (25 pJ/bit) to date. The subharmonic direct conversion front-end, implemented using 0.18 ?m SiGe, presents excellent conversion properties with a 4 GHz DSB RF bandwidth. On the other hand, the CMOS heterodyne implementation of the 60 GHz front-end receiver, targeted towards a robust, single-chip, high-performance, low-power, and integrated 60 GHz transceiver solution, presents the most wideband receiver front-end reported to date. Finally, different multi-band and tunable millimeter-wave circuits are presented towards the future implementation of cognitive and multi-band millimeter-wave radio.