The purpose of this study was to highlight LGBT asylum-seekers experiences of expressing their sexual identity or gender identity in the country of origin and in the asylum process in Sweden. By interviewing people who got permanent residence in Sweden because of gender or sexual orientation in Utlänningslagen (2005:716) we have been able to explore their own experiences from expressing themselves. This study analyse these experiences from a social psychological perspective, from this analysis we aimed to obtain a deeper understanding of how the experiences from the country of origin affects on the experiences in the asylum process. This study shows that LGBT asylum-seekers often is facing negative reactions from the environment in the country of origin, these reactions can limit their possibilities to express their sexual identity or gender identity in the asylum process in Sweden. The negative reactions they experience in the country of origin have contributed to that many LGBT people internalize feelings of fear to express themselves, feelings that often stays when they come to Sweden to seek asylum. We hope that this study will contribute to a better treatment and reception from social workers and other professionals who meet these people in their work, by increased knowledge of the conditions under which LGBT people are coming to seek asylum in Sweden.

Heterosexual individuals who live in a culture of honor are exposed to honor oppression in today’s Swedish society is well known. However, it is not equally recognized that LGBT-people from a culture of honor are exposed to honor oppression. The study aims to investigate how eight individuals belonging to the LGBT-group and the culture of honor feel about their ability to develop their true identity and live out their sexual orientation. The study is qualitative and the collected empirical material constitutes of chat interviews with young LGBT-people. The results are analyzed from theoretical concepts such as culture of honor, honor oppression and also shame and pride. The result shows that there are risks such as being excluded from the family community, physical and mental abuse and in one case there is risk of honor killing. The study also reveals that the parents who support their children themselves are afraid of being excluded or harassed if the collective becomes aware of the child´s sexual orientation. The respondents say in the study that they have received lack of assistance from social services. A discussion has been made on whether social services are competent enough to support and help LGBT-people who comes from a culture of honor.

<!--StartFragment-->The purpose of this thesis was to study how four swedish lifestyle magazines: Veckorevyn and Cosmopolitan for women, King and Café for men, represent three groups of people and how often these people appear in the magazines. These groups are HBT, homosexuals, bisexuals and transsexuals, disabled and immigrants. The years we studied were 2007 and 2008. Our main questions were: How often do the three groups appear in the four magazines? How are the groups represented? In order to answer these questions we used a qualitative analysis. We used tools from semiotics, narratology and discourse. We also used a quantitative analysis in order to find out how often the groups appeared.  We based our study on theories about representation, stereotypes, social construction, identity and masculinity. We chose these theories because the magazines used this to present their stories about the groups, in a social constructed world. These theories helped us to analyze our results and gave a deeper meaning to our conclusions. Our results showed that all groups appear very little in the magazines. We found that all groups except for immigrants are stereotyped in well-known patterns. Disabled persons are often represented as heroes. We also found that HBT- persons often are stereotyped and appear in articles where sex and relationships is the main subject. Many of the immigrants are famous and they are portrayed as themselves and as “one of us”. <!--EndFragment-->

Heteronormativiteten är den norm som är starkast i vårt svenska samhälle och omedvetenheten kring den är stor bland gemene man. Problematiken med att låta dessa normer styra i det dolda kan medföra att de som inte platsar in drabbas av utanförskap. Syftet med den här studien är att undersöka om fyra svenska homestylingprogram bekräftar eller avviker från heteronormativiteten, hur de gör det och om det är någon skillnad mellan dessa program. Undersökningen har utförts genom att använda diskursanalys enligt Michel Foucaults beskrivning av detta samt genom inspiration från Eva Bolanders dissertation (2009) om hennes analys av sexualupplysningsprogram. Vår analys redovisas under fem teman och varje program ställs upp var för sig. Analysen visar att dessa fyra program både avviker och bekräftar heteronormerna. När det gäller yrken och arbetsuppgifter och utseende visar vår analys att de fyra homestylingprogrammen bekräftar heteronormativiteten i mycket hög grad men när det gäller jargong, sexuella läggningar samt utförande av uppgifterna avviker programmen till ganska stor del eftersom de inte följer det typiskt heteronormativa kännetecknen i särskilt hög grad. En jämförelse mellan dessa fyra program visar att TV4:s program Äntligen hemma var det program som mest bekräftade heteronormerna och att de andra tre var svåra att rangordna eftersom de alla avvek från normerna men på skilda sätt.

The objective of this work is to investigate the performance of SiGe HBTs and scaled CMOS devices in extreme environments. In this work, the inverse mode operation of SiGe HBTs is investigated as a potential solution to the vulnerability of SiGe HBTs to single event effects. The performance limitations of SiGe HBTs operating in inverse mode are investigated through an examination of the effects of scaling on inverse mode performance and optimization schemes for inverse mode performance enhancements are discussed and demonstrated. In addition the performance of scaled MOSFETs, that constitute the digital backbone of any BiCMOS technology, is investigated under radiation exposure and cryogenic temperatures. Extreme environments and their effects on semiconductor devices are introduced in Chapter 1. The immunity of 90nm MOSFETs to total ionizing dose damage under proton radiation is demonstrated. Inverse mode operation of SiGe HBTs is introduced in Chapter 2 as a potential radiation hard solution by design. The effect of scaling on inverse mode performance of SiGe HBTs is investigated and the performance limitations in inverse mode are identified. Optimization schemes for improving inverse mode performance of SiGe HBTs are discussed in Chapter 3. Inverse mode performance enhancement is demonstrated experimentally in optimized device structures manufactured in a commercial third generation SiGe HBT BiCMOS platform. Further, a cascode device structure, the combines the radiation immunity of an inverse mode structure with the performance of a forward mode common emitter device is XIV discussed. Finally, idealized doping profiles for inverse mode performance enhancement is discussed through TCAD simulations. The cryogenic performance of inverse mode SiGe HBTs are discussed in Chapter 4. A novel base current behavior at cryogenic temperature is identified and its effect on the inverse mode performance is discussed. Matching performance of a 90nm bulk CMOS technology at cryogenic temperatures is investigated experimentally and through TCAD simulations in Chapter 5. The effect of various process parameters on the temperature sensitivity of threshold voltage mismatch is discussed. The potential increase of mismatch in subthreshold MOSFETs operating in cryogenic temperatures due to hot carrier effects is also investigated.

Thesis--Auburn University, 2009. / Abstract. Vita. Includes bibliographic references (p.64-66).

Med utgångspunkt i diskrimineringslagen som trädde i kraft 2009 samt rapporter som visat på stor ohälsa hos homo- och bisexuella ungdomar och unga transpersoner, syftar denna studie till att undersöka hur yrkesverksamma lärare uppfattar den nyaste diskrimineringsgrunden könsöverskridande identitet eller uttryck samt hur de uppfattar och talar om kön och sexualitet utifrån sina skolkontexter. Åtta informanter arbetande i grundskolans senare år och i gymnasiet intervjuas utifrån en kvalitativ metod och deras berättelser och upplevelser analyseras utifrån ett queerteoretiskt perspektiv, där normer rörande kön och sexualitet sätts i fokus. Resultatet visar en mycket heteronormativ skolkontext, där normerna kring manligt och kvinnligt är starka och där andra sexuella läggningar än heterosexuell och andra könsidentiteter än man och kvinna osynliggörs. Diskrimineringsgrunden könsöverskridande identitet eller uttryck har diskuterats i liten utsträckning, och frågor rörande homo- och bisexualitet har överlag en mycket liten plats i skolvardagen, om inte enskilda lärare har ett personligt intresse i frågorna. I diskussionen belyses den nya lagens egentliga betydelse utifrån det faktum att transpersoner och till viss del homo- och bisexuella personer är osynliga i skolkontexterna. Här diskuteras även hur olika likabehandlande strategier, såsom ett neutralt eller ett normkritiskt förhållningssätt, kan bidra till ökad synlighet av och minskad ohälsa hos HBT-personer.

Orientador: Jose Alexandre Diniz / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-10T02:20:44Z (GMT). No. of bitstreams: 1 Zoccal_LeonardoBreseghello_D.pdf: 6734188 bytes, checksum: 05f6c64d923bafb5e071d89514d0fa43 (MD5) Previous issue date: 2007 / Resumo: Este trabalho apresenta um método simples de passivação de superfícies semicondutoras III-V de substratos de arseneto de gálio (GaAs) e de heteroestruturas de fosfeto de gálio-índio sobre arseneto de gálio (InGaP/GaAs), que são utilizados em transist res de efeito de campo, MESFET (Metal-Semiconductor Field Effect Transistor) e MISFET Metal-Insulator-Semiconductor Field Effect Transistor), e transistores bipolares de heterojunção (HBT), respectivamente. O processo de passivação visa à máxima redução da densidade de estados de superfícies semicondutoras para níveis menores que 1012 cm-2. A alta densidade de estados na superfície do GaAs provoca corrente de fuga nas regiões ativas dos transistores MESFET e HBT, reduzindo o desempenho destes dispositivos. Além disso, impossibilita a formação de dispositivos MISFET sobre os substratos de GaAs, devido à alta densidade de estados na região da interface isolante-semicondutor. Para o estudo da passivação de superfícies, filmes de nitreto de silício (SiNX) são depositados diretam nte por plasma ECR-CVD (Electron Cyclotron Resonance - Chemical Vapor Deposition) sobre substratos de GaAs e heteroestruturas do tipo InGaP/GaAs. Os plasmas ECR foram analisados por espectroscopia de emissão óptica (OES), e identificou-se baixa formação de espécies H e NH na fase gasosa para pressão de processo de 2,5 mTorr. Os filmes de SiNX foram caracterizados estruturalmente por espectroscopia de absorção do infravermelho (FTIR) e por elipsometria, que indicaram, respectivamente, a formação de ligações Si-N e valores de índice de refração es de nitreto de silício. Capacitores MIS e transisto T foram fabricados para avaliar os efeitos da passivação sobre os dispositivos. Os excelentes resultados obtidos, tais como transist o e em torno de 2,0 nos filmres MISFET e HB ores HBT passivados apresentando maiores ganhos de corrente do que os não-passivados, e os transistores MISFET apresentando maiores valores de transcondutância do que os MESFET (que foram usados como dispositivos de controle), indicam que o nosso processo de passivação é muito eficiente, sendo completamente compatível com a tecnologia de fabricação de circuitos integrados monolíticos de microondas (MMIC) / Abstract: This work presents a simple passivation method for III-V semiconductor surfaces of gallium arsenide (GaAs) substrates and indium-gallium phosphide on gallium arsenide (InGaP/GaAs) heterostructures, which are us in field effect transistors MESFET (Metal-Semiconductor Field Effect Transistor) and MISFET (Metal-Insulator-Semiconductor Field Effect Transistor) and heterojunction bip lar transistors (HBT), respectively. The passivation process aims the maximum reduction of semiconductor surface state density at levels lower than 1012 states/cm2. The high surface state density on GaAs surface produces current leakage in active regions of MESFET and HBT transistors, reducing the device performance. Furthermore, the MISFET device formation on GaAs substrate is not allowed, passivation study, silicon nitride films (SiNX) are deposited by ECR-CVD (Electron Cyclotron Resonance - Chemical Deposition Vapor) plasma directly over GaAs substrate and InGaP/GaAs heterostructures. The ECR plasmas were analyzed by optical emission spectroscopy, (OES), and low formation of H and NH molecules in the gas phase was detected at process pressure of 2.5 mTorr. The SiNX film structural characterization was obtained by infra-red absorption spectrometry (FTIR) and ellipsometry, which, respectively, indicate the Si-N bo tive index values of about 2.0 at the silicon nitride films. MIS cap BT transistors were fabricated to verify the passivation process effect on devices. The excellent results obtained, such as higher and formation and refracacitors, MISFET and H current gain of passivated device compared to unpassivated HBTs and higher transconductances of MISFET devices compared to MESFET (which were used as control devices), indicate that our simple passivation process is very efficient, being fully compatible with monolithic microwave integrated circuits (MMIC) / Doutorado / Eletrônica, Microeletrônica e Optoeletrônica / Doutor em Engenharia Elétrica

Les technologies de transistors bipolaires à hétérojonctions (HBT) ont montré leur efficacité pour permettre aux circuits de traiter les grands signaux au delà de 100Gbit/s pour les réseaux optiques Ethernet. Pour assurer ce résultat, une bonne fiabilité doit être garantie. Des tests de vieillissements accélérés sous contraintes thermiques et électrothermiques sont réalisés et analysés avec les outils de simulation physique Sentaurus TCAD afin d’obtenir les lois de vieillissement physiques. Le modèle compact HICUM niveau 2, basé sur la physique, est utilisé pour modéliser précisément le composant avant vieillissement, puis pour ajuster les caractéristiques intermédiaires pendant le vieillissement. L’évolution des paramètres du modèle est décrit avec des équations appropriées pour obtenir un modèle électrique compact du vieillissement basé sur la physique. Les lois de vieillissement et les équations d’évolutions des paramètres avec le temps de contrainte sont implantées dans le modèle électrique de vieillissement en langage Verilog-A, ce qui permet de simuler l’impact des mécanismes de défaillances sur le circuit en conditions opérationnelles. / Modern InP Heterojunction Bipolar Transistors (HBT) technology has shown its efficiency for making large signal ICs working above 100 Gbits/s for Ethernet optical transport network. To full-fill this expectation, a good reliability has to be assured. Accelerated aging tests under thermal and electro-thermal stress conditions are performed and analyzed with Sentaurus TCAD device simulation tools to achieve the physical aging laws. The physics based advanced bipolar compact model HICUM Level 2 is used for precise modeling of the devices before aging. The HICUM parameters are extracted to fit the intermediate characterizations during aging. The evolution of the model parameters is described with suitable equations to achieve a physics based compact electrical aging model. The aging laws and the parameter evolution equations with stress time are implemented in compact electrical aging model in Verilog-A languages which allows us to simulate the impact of device failure mechanisms on the circuit in operating conditions.

Kyoto University (京都大学) / 0048 / 新制・課程博士 / 博士(工学) / 甲第16862号 / 工博第3583号 / 新制||工||1541(附属図書館) / 29537 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 藤田 静雄, 准教授 浅野 卓 / 学位規則第4条第1項該当